CN117630627B - Silicon carbide MOS device packaging detection method and system - Google Patents

Silicon carbide MOS device packaging detection method and system Download PDF

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CN117630627B
CN117630627B CN202410106090.6A CN202410106090A CN117630627B CN 117630627 B CN117630627 B CN 117630627B CN 202410106090 A CN202410106090 A CN 202410106090A CN 117630627 B CN117630627 B CN 117630627B
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CN117630627A (en
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窦静
仇亮
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Guangdong Renmao Electronic Co ltd
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    • G01—MEASURING; TESTING
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Abstract

The invention provides a silicon carbide MOS device packaging detection method and a system, comprising the following steps: acquiring a bonding wire state signal of the packaged silicon carbide MOS device, and screening to obtain packaging characteristic parameters of the silicon carbide MOS device in normal and failure states of the bonding wire according to the bonding wire state signal; based on the encapsulation characteristic parameters of the silicon carbide MOS device in the normal and failure states of the bonding wire, generating a comprehensive characteristic matrix corresponding to the encapsulation characteristic parameters through Hilbert transformation, discrete Fourier transformation and Hilbert-Huang transformation; and comparing the comprehensive characteristic matrix with a preset standard comprehensive characteristic matrix to obtain a detection result of the silicon carbide MOS device package. According to the invention, the comprehensive feature matrix is generated by the Hilbert transform method, the discrete Fourier transform method and the Hilbert-Huang transform method to detect the encapsulation of the silicon carbide MOS device, so that the limitation of a single digital protection algorithm is eliminated, and the high-precision detection of the encapsulation state of the silicon carbide MOS device is realized.

Description

Silicon carbide MOS device packaging detection method and system
Technical Field
The invention relates to the technical field of crystals, in particular to a silicon carbide MOS device packaging detection method and system.
Background
At present, the welded silicon carbide MOS device is widely applied to the fields of rail transit, new energy power generation and the like, is a core power device of power electronic equipment, and the reliability of the device is critical to the safe operation of a system. The package failure is one of the main failure modes of the welded silicon carbide MOS device, and the package state detection technology is the key for realizing the fault diagnosis, state prediction and intelligent operation and maintenance of the device.
The existing silicon carbide MOS device packaging detection method is inaccurate in detection, and cannot eliminate the influence of factors such as junction temperature and the like, so that the problem of ageing of the silicon carbide MOS device packaging cannot be found in time, and therefore economic loss which is difficult to measure can be caused.
Disclosure of Invention
In order to overcome the defects in the prior art, the invention provides a silicon carbide MOS device packaging detection method, which comprises the following steps:
Acquiring a bonding wire state signal of the packaged silicon carbide MOS device, and screening to obtain packaging characteristic parameters of the silicon carbide MOS device in normal and failure states of the bonding wire according to the bonding wire state signal;
Based on the encapsulation characteristic parameters of the silicon carbide MOS device in the normal and failure states of the bonding wire, generating a comprehensive characteristic matrix corresponding to the encapsulation characteristic parameters through Hilbert transformation, discrete Fourier transformation and Hilbert-Huang transformation;
and comparing the comprehensive characteristic matrix with a preset standard comprehensive characteristic matrix to obtain a detection result of the silicon carbide MOS device package.
Preferably, the obtaining the bonding wire state signal of the packaged silicon carbide MOS device, and screening to obtain the packaging characteristic parameters of the silicon carbide MOS device in the normal and failure states of the bonding wire according to the bonding wire state signal, includes:
Acquiring bonding wire state signals of the packaged silicon carbide MOS device, and performing signal classification according to the bonding wire state signals to acquire a signal classification result;
Wherein the signal classification result includes: a bonding wire normal state signal and a bonding wire failure state signal;
based on the signal classification result, signal data screening is carried out to obtain the packaging characteristic parameters of the silicon carbide MOS device in the normal and failure states of the bonding wire;
taking the packaging characteristic parameter of the silicon carbide MOS device in a normal state of the bonding wire as a first packaging characteristic parameter;
And taking the packaging characteristic parameter of the silicon carbide MOS device in the bonding wire failure state as a second packaging characteristic parameter.
Preferably, each parameter in the package characteristic parameter includes one or more of the following: on-resistance, saturation voltage drop, and short circuit current.
Preferably, the generating, according to the package characteristic parameters of the silicon carbide MOS device in the normal and failure states of the bonding wire, the comprehensive characteristic matrix corresponding to the package characteristic parameters through hilbert transformation, discrete fourier transformation and hilbert-yellow transformation includes:
calculating the envelope value of each parameter of the second packaging characteristic parameter by adopting Hilbert transform according to the second packaging characteristic parameter;
calculating the root mean square value of each parameter of the second packaging characteristic parameter based on the envelope value of each parameter of the second packaging characteristic parameter;
Generating a characteristic value sequence of the root mean square value of the second packaging characteristic parameter based on the root mean square value of each parameter of the second packaging characteristic parameter and the root mean square value of each parameter of the first packaging characteristic parameter;
based on the second packaging characteristic parameters, calculating the maximum amplitude of fundamental waves, the maximum amplitude of odd harmonics and the maximum amplitude of even harmonics of each parameter of the second packaging characteristic parameters by adopting discrete Fourier transform;
generating a harmonic characteristic value sequence of the second packaging characteristic parameter based on the fundamental wave maximum amplitude, the odd harmonic maximum amplitude and the even harmonic maximum amplitude of each parameter of the second packaging characteristic parameter;
Generating an instantaneous amplitude accumulation sum of each parameter of the second packaging characteristic parameter by Hilbert-Huang transformation in a preset packaging period of each parameter of the second packaging characteristic parameter;
Generating a sudden change characteristic value sequence of the second packaging characteristic parameter based on the instantaneous amplitude accumulation sum of each parameter of the second packaging characteristic parameter and the instantaneous amplitude accumulation sum of each parameter of the first packaging characteristic parameter;
and generating a comprehensive feature matrix corresponding to the second packaging feature parameter based on the feature value sequence, the harmonic feature value sequence and the abrupt feature value sequence of the root mean square value of the second packaging feature parameter.
Preferably, the characteristic value sequence of the root mean square value of the second package characteristic parameter is generated according to the following formula:
；
wherein, ；
In the method, in the process of the invention,A characteristic value sequence representing the root mean square value of a second packaging characteristic parameter corresponding to the jth parameter of the 1 st row of the comprehensive characteristic matrix; A root mean square value of a j-th parameter representing the first package characteristic; a root mean square value of a j-th parameter representing a second package characteristic; j represents parameters of the package characteristic parameters, wherein And respectively corresponding to the on-resistance, the saturation voltage drop and the short-circuit current parameters.
Preferably, the sequence of harmonic eigenvalues of the second package characteristic is generated as follows:
；
wherein, ；
In the method, in the process of the invention,Representing a harmonic characteristic value sequence of a second packaging characteristic parameter corresponding to the jth parameter of the 2 nd row of the comprehensive characteristic matrix; An even harmonic maximum amplitude of a j-th parameter representing a second package characteristic; An odd harmonic maximum amplitude of a j-th parameter representing a second package characteristic; One half of the maximum amplitude of the fundamental wave of the j-th parameter representing the second package characteristic; j represents parameters of the package characteristic parameters, wherein And respectively corresponding to the on-resistance, the saturation voltage drop and the short-circuit current parameters.
Preferably, the abrupt characteristic value sequence of the second package characteristic parameter is generated according to the following formula:
；
wherein, ；
In the method, in the process of the invention,A sudden change characteristic value sequence of a second packaging characteristic parameter corresponding to the jth parameter of the 3 rd row of the comprehensive characteristic matrix is represented; a cumulative sum of instantaneous magnitudes of a j-th parameter representing a second package characteristic; A cumulative sum of instantaneous magnitudes of a j-th parameter representing a first package characteristic; j represents parameters of the package characteristic parameters, wherein And respectively corresponding to the on-resistance, the saturation voltage drop and the short-circuit current parameters.
Preferably, the comparing the integrated feature matrix with a preset standard integrated feature matrix to obtain a detection result of the silicon carbide MOS device package includes:
Comparing the comprehensive characteristic matrix with a preset standard comprehensive characteristic matrix to obtain an on-resistance parameter comparison result, a saturation voltage drop parameter comparison result and a short-circuit current parameter comparison result;
Obtaining a detection result of the silicon carbide MOS device package according to the resistance parameter comparison result, the saturation voltage drop parameter comparison result and the short-circuit current parameter comparison result;
When the comparison result of the on-resistance parameters shows that the on-resistance parameters are increased compared with the normal on-resistance parameters, judging that the detection result is that the encapsulation of the silicon carbide MOS device is abnormal, otherwise, judging that the detection result is that the encapsulation of the silicon carbide MOS device is normal;
When the comparison result of the saturation voltage drop parameters shows that the saturation voltage drop parameters are increased by more than or equal to 5% from the normal saturation voltage drop, judging that the detection result is abnormal in encapsulation of the silicon carbide MOS device, otherwise, judging that the detection result is normal in encapsulation of the silicon carbide MOS device;
And when the comparison result of the short-circuit current parameters shows that the short-circuit current parameters are reduced compared with the normal short-circuit current parameters, judging that the detection result is that the encapsulation of the silicon carbide MOS device is abnormal, otherwise, judging that the detection result is that the encapsulation of the silicon carbide MOS device is normal.
Preferably, the on-resistance is calculated as follows:
；
In the method, in the process of the invention, Representing the on-resistance of the silicon carbide MOS device; Representing the pole voltage of a silicon carbide MOS device; representing the on-current of the silicon carbide MOS device; Indicating the junction temperature Is a function of (2); Representing the bond wire resistance of the silicon carbide MOS device.
Based on the same inventive concept, the invention also provides a silicon carbide MOS device packaging detection system, which comprises:
The parameter acquisition module is used for acquiring bonding wire state signals of the packaged silicon carbide MOS device, and screening to obtain packaging characteristic parameters of the silicon carbide MOS device in normal and failure states of the bonding wire according to the bonding wire state signals;
The matrix generation module is used for generating a comprehensive feature matrix corresponding to the packaging feature parameters through Hilbert transformation, discrete Fourier transformation and Hilbert-Huang transformation based on the packaging feature parameters of the silicon carbide MOS device in the normal and failure states of the bonding wire;
And the packaging detection module is used for comparing the comprehensive characteristic matrix with a preset standard comprehensive characteristic matrix to obtain a detection result of the silicon carbide MOS device packaging.
Preferably, the parameter acquisition module is specifically configured to:
Acquiring bonding wire state signals of the packaged silicon carbide MOS device, and performing signal classification according to the bonding wire state signals to acquire a signal classification result;
Wherein the signal classification result includes: a bonding wire normal state signal and a bonding wire failure state signal;
based on the signal classification result, signal data screening is carried out to obtain the packaging characteristic parameters of the silicon carbide MOS device in the normal and failure states of the bonding wire;
taking the packaging characteristic parameter of the silicon carbide MOS device in a normal state of the bonding wire as a first packaging characteristic parameter;
And taking the packaging characteristic parameter of the silicon carbide MOS device in the bonding wire failure state as a second packaging characteristic parameter.
Preferably, each parameter in the package characteristic parameters in the parameter acquisition module includes one or more of the following: on-resistance, saturation voltage drop, and short circuit current.
Preferably, the matrix generation module is specifically configured to:
calculating the envelope value of each parameter of the second packaging characteristic parameter by adopting Hilbert transform according to the second packaging characteristic parameter;
calculating the root mean square value of each parameter of the second packaging characteristic parameter based on the envelope value of each parameter of the second packaging characteristic parameter;
Generating a characteristic value sequence of the root mean square value of the second packaging characteristic parameter based on the root mean square value of each parameter of the second packaging characteristic parameter and the root mean square value of each parameter of the first packaging characteristic parameter;
based on the second packaging characteristic parameters, calculating the maximum amplitude of fundamental waves, the maximum amplitude of odd harmonics and the maximum amplitude of even harmonics of each parameter of the second packaging characteristic parameters by adopting discrete Fourier transform;
generating a harmonic characteristic value sequence of the second packaging characteristic parameter based on the fundamental wave maximum amplitude, the odd harmonic maximum amplitude and the even harmonic maximum amplitude of each parameter of the second packaging characteristic parameter;
Generating an instantaneous amplitude accumulation sum of each parameter of the second packaging characteristic parameter by Hilbert-Huang transformation in a preset packaging period of each parameter of the second packaging characteristic parameter;
Generating a sudden change characteristic value sequence of the second packaging characteristic parameter based on the instantaneous amplitude accumulation sum of each parameter of the second packaging characteristic parameter and the instantaneous amplitude accumulation sum of each parameter of the first packaging characteristic parameter;
and generating a comprehensive feature matrix corresponding to the second packaging feature parameter based on the feature value sequence, the harmonic feature value sequence and the abrupt feature value sequence of the root mean square value of the second packaging feature parameter.
Preferably, the characteristic value sequence of the root mean square value of the second package characteristic parameter in the matrix generation module is generated according to the following formula:
；
wherein, ；
In the method, in the process of the invention,A characteristic value sequence representing the root mean square value of a second packaging characteristic parameter corresponding to the jth parameter of the 1 st row of the comprehensive characteristic matrix; A root mean square value of a j-th parameter representing the first package characteristic; a root mean square value of a j-th parameter representing a second package characteristic; j represents parameters of the package characteristic parameters, wherein And respectively corresponding to the on-resistance, the saturation voltage drop and the short-circuit current parameters.
Preferably, the harmonic characteristic value sequence of the second packaging characteristic parameter in the matrix generation module is generated according to the following formula:
；
wherein, ；
In the method, in the process of the invention,Representing a harmonic characteristic value sequence of a second packaging characteristic parameter corresponding to the jth parameter of the 2 nd row of the comprehensive characteristic matrix; An even harmonic maximum amplitude of a j-th parameter representing a second package characteristic; An odd harmonic maximum amplitude of a j-th parameter representing a second package characteristic; One half of the maximum amplitude of the fundamental wave of the j-th parameter representing the second package characteristic; j represents parameters of the package characteristic parameters, wherein And respectively corresponding to the on-resistance, the saturation voltage drop and the short-circuit current parameters.
Preferably, the sequence of abrupt characteristic values of the second package characteristic parameter in the matrix generation module is generated according to the following formula:
；
wherein, ；
In the method, in the process of the invention,A sudden change characteristic value sequence of a second packaging characteristic parameter corresponding to the jth parameter of the 3 rd row of the comprehensive characteristic matrix is represented; a cumulative sum of instantaneous magnitudes of a j-th parameter representing a second package characteristic; A cumulative sum of instantaneous magnitudes of a j-th parameter representing a first package characteristic; j represents parameters of the package characteristic parameters, wherein And respectively corresponding to the on-resistance, the saturation voltage drop and the short-circuit current parameters.
Preferably, the package detection module is specifically configured to:
Comparing the comprehensive characteristic matrix with a preset standard comprehensive characteristic matrix to obtain an on-resistance parameter comparison result, a saturation voltage drop parameter comparison result and a short-circuit current parameter comparison result;
Obtaining a detection result of the silicon carbide MOS device package according to the resistance parameter comparison result, the saturation voltage drop parameter comparison result and the short-circuit current parameter comparison result;
When the comparison result of the on-resistance parameters shows that the on-resistance parameters are increased compared with the normal on-resistance parameters, judging that the detection result is that the encapsulation of the silicon carbide MOS device is abnormal, otherwise, judging that the detection result is that the encapsulation of the silicon carbide MOS device is normal;
When the comparison result of the saturation voltage drop parameters shows that the saturation voltage drop parameters are increased by more than or equal to 5% from the normal saturation voltage drop, judging that the detection result is abnormal in encapsulation of the silicon carbide MOS device, otherwise, judging that the detection result is normal in encapsulation of the silicon carbide MOS device;
And when the comparison result of the short-circuit current parameters shows that the short-circuit current parameters are reduced compared with the normal short-circuit current parameters, judging that the detection result is that the encapsulation of the silicon carbide MOS device is abnormal, otherwise, judging that the detection result is that the encapsulation of the silicon carbide MOS device is normal.
Preferably, the on-resistance in the package detection module is calculated as follows:
；
In the method, in the process of the invention, Representing the on-resistance of the silicon carbide MOS device; Representing the pole voltage of a silicon carbide MOS device; representing the on-current of the silicon carbide MOS device; Indicating the junction temperature Is a function of (2); Representing the bond wire resistance of the silicon carbide MOS device.
Compared with the closest prior art, the invention has the following beneficial effects:
1. the invention provides a silicon carbide MOS device packaging detection method and a system, comprising the following steps: acquiring a bonding wire state signal of the packaged silicon carbide MOS device, and screening to obtain packaging characteristic parameters of the silicon carbide MOS device in normal and failure states of the bonding wire according to the bonding wire state signal; based on the encapsulation characteristic parameters of the silicon carbide MOS device in the normal and failure states of the bonding wire, generating a comprehensive characteristic matrix corresponding to the encapsulation characteristic parameters through Hilbert transformation, discrete Fourier transformation and Hilbert-Huang transformation; the comprehensive feature matrix is compared with a preset standard comprehensive feature matrix to obtain a detection result of the encapsulation of the silicon carbide MOS device, and the method for detecting the encapsulation of the silicon carbide MOS device by generating the comprehensive feature matrix through a Hilbert transform method, a discrete Fourier transform method and a Hilbert-Huang transform method eliminates the limitation of a single digital protection algorithm and realizes high-precision detection of the encapsulation state of the silicon carbide MOS device.
2. The invention can find that the on-resistance, the saturation voltage drop and the short-circuit current are important indexes of the device by detecting the packaging state of the silicon carbide MOS device, and can realize the packaging technology for improving the reliability of the silicon carbide MOS device by reducing the on-resistance, reducing the saturation voltage drop or increasing the short-circuit current.
Drawings
FIG. 1 is a flow chart of a method for detecting a silicon carbide MOS device package;
Fig. 2 is a schematic diagram showing a connection between modules of a silicon carbide MOS device package inspection system according to the present invention.
Detailed Description
The following describes the embodiments of the present invention in further detail with reference to the drawings.
Example 1:
The flow chart of the method for detecting the encapsulation of the silicon carbide MOS device provided by the invention is shown in figure 1, and comprises the following steps:
Step 1: acquiring a bonding wire state signal of the packaged silicon carbide MOS device, and screening to obtain packaging characteristic parameters of the silicon carbide MOS device in normal and failure states of the bonding wire according to the bonding wire state signal;
Step 2: based on the encapsulation characteristic parameters of the silicon carbide MOS device in the normal and failure states of the bonding wire, generating a comprehensive characteristic matrix corresponding to the encapsulation characteristic parameters through Hilbert transformation, discrete Fourier transformation and Hilbert-Huang transformation;
Step 3: and comparing the comprehensive characteristic matrix with a preset standard comprehensive characteristic matrix to obtain a detection result of the silicon carbide MOS device package.
Specifically, the step 1 includes:
Acquiring bonding wire state signals of the packaged silicon carbide MOS device, and performing signal classification according to the bonding wire state signals to acquire a signal classification result;
Wherein the signal classification result includes: a bonding wire normal state signal and a bonding wire failure state signal;
based on the signal classification result, signal data screening is carried out to obtain the packaging characteristic parameters of the silicon carbide MOS device in the normal and failure states of the bonding wire;
taking the packaging characteristic parameter of the silicon carbide MOS device in a normal state of the bonding wire as a first packaging characteristic parameter;
And taking the packaging characteristic parameter of the silicon carbide MOS device in the bonding wire failure state as a second packaging characteristic parameter.
Each parameter in the package characteristic parameter comprises one or more of the following: on-resistance, saturation voltage drop, and short circuit current.
The invention simulates the silicon carbide MOS device through a pre-established simulation model, and can find that the root of the bonding wire and the corner of the solder layer become stress concentration parts due to the mismatch of the thermal expansion coefficients of materials when the silicon carbide MOS device is packaged;
microscopic analysis is carried out on the packaged aged silicon carbide MOS device through equipment such as a scanning electron microscope, industrial CT and the like, and the fact that the root and the vault of the bonding wire are respectively tilted and cracked, and large-area cracks and holes are formed at the corners of the solder layer is found;
The current research shows that the bonding wire failure and the solder layer failure are the main packaging failure modes of the welded silicon carbide MOS device;
According to the invention, the packaging characteristic parameters of the silicon carbide MOS device in the normal and failure states of the bonding wire are obtained by obtaining the bonding wire state signal of the packaged silicon carbide MOS device and screening the bonding wire state signal, and the packaging state of the silicon carbide MOS device can be accurately judged by carrying out subsequent calculation and detection according to the packaging characteristic parameters.
Specifically, the step 2 includes:
calculating the envelope value of each parameter of the second packaging characteristic parameter by adopting Hilbert transform according to the second packaging characteristic parameter;
calculating the root mean square value of each parameter of the second packaging characteristic parameter based on the envelope value of each parameter of the second packaging characteristic parameter;
Generating a characteristic value sequence of the root mean square value of the second packaging characteristic parameter based on the root mean square value of each parameter of the second packaging characteristic parameter and the root mean square value of each parameter of the first packaging characteristic parameter;
wherein, the mechanism of Hilbert (Hilbert) transform computation is as follows:
the Hilbert Transform (HT), an important transform widely used in digital and communication systems, is also a popular method of analyzing nonlinear signals,
For any signalHilbert transformCan be expressed as:
；
according to the above equation, complex signals can be further synthesized:
；
According to the complex signal expression, the instantaneous amplitude, the instantaneous angle and the instantaneous frequency of the original signal can be directly obtained.
Based on the second packaging characteristic parameters, calculating the maximum amplitude of fundamental waves, the maximum amplitude of odd harmonics and the maximum amplitude of even harmonics of each parameter of the second packaging characteristic parameters by adopting discrete Fourier transform;
generating a harmonic characteristic value sequence of the second packaging characteristic parameter based on the fundamental wave maximum amplitude, the odd harmonic maximum amplitude and the even harmonic maximum amplitude of each parameter of the second packaging characteristic parameter;
Wherein, the Discrete Fourier Transform (DFT) calculation mechanism is as follows:
All cycles of Is a nonlinear signal of (2)Can be decomposed into:
；
By discrete fourier transform, it is possible to obtain:
；
；
Wherein, will be AndThe n-th harmonic correlation parameters can be obtained when the real part and the imaginary part of the n-th harmonic are considered respectively.
Generating an instantaneous amplitude accumulation sum of each parameter of the second packaging characteristic parameter by Hilbert-Huang transformation in a preset packaging period of each parameter of the second packaging characteristic parameter;
Generating a sudden change characteristic value sequence of the second packaging characteristic parameter based on the instantaneous amplitude accumulation sum of each parameter of the second packaging characteristic parameter and the instantaneous amplitude accumulation sum of each parameter of the first packaging characteristic parameter;
Wherein the complete Hilbert-yellow (Hilbert-Huang) transform consists of two processes: empirical Mode Decomposition (EMD) and Hilbert filters;
Using EMD, the original failure signal can be decomposed into a series of Intrinsic Mode Function (IMF) components and residuals that characterize the time domain parameters;
wherein, the Hilbert-Huang (Hilbert-Huang) transformation mechanism is calculated as follows:
；
In the method, in the process of the invention, AndRespectively representing an IMF component and a residual error n times;
to obtain a limited number of IMF components, the EMD adaptively decomposes the waveform of a given signal at different scales according to local feature scales;
The first decomposed IMF component (IMF 1) has the smallest feature time scale and is thus most similar to the original signal;
the subsequent IMF component is then represented by a larger feature time scale with a smaller value of similarity to the original signal;
Finally, a Hilbert filter is used to calculate the instantaneous amplitude and frequency.
And generating a comprehensive feature matrix corresponding to the second packaging feature parameter based on the feature value sequence, the harmonic feature value sequence and the abrupt feature value sequence of the root mean square value of the second packaging feature parameter.
The characteristic value sequence of the second packaging characteristic parameter root mean square value is generated according to the following formula:
；
wherein, ；
In the method, in the process of the invention,A characteristic value sequence representing the root mean square value of a second packaging characteristic parameter corresponding to the jth parameter of the 1 st row of the comprehensive characteristic matrix; A root mean square value of a j-th parameter representing the first package characteristic; a root mean square value of a j-th parameter representing a second package characteristic; j represents parameters of the package characteristic parameters, wherein And respectively corresponding to the on-resistance, the saturation voltage drop and the short-circuit current parameters.
The harmonic characteristic value sequence of the second packaging characteristic parameter is generated according to the following formula:
；
wherein, ；
In the method, in the process of the invention,Representing a harmonic characteristic value sequence of a second packaging characteristic parameter corresponding to the jth parameter of the 2 nd row of the comprehensive characteristic matrix; An even harmonic maximum amplitude of a j-th parameter representing a second package characteristic; An odd harmonic maximum amplitude of a j-th parameter representing a second package characteristic; One half of the maximum amplitude of the fundamental wave of the j-th parameter representing the second package characteristic; j represents parameters of the package characteristic parameters, wherein And respectively corresponding to the on-resistance, the saturation voltage drop and the short-circuit current parameters.
The abrupt characteristic value sequence of the second packaging characteristic parameter is generated according to the following formula:
；
wherein, ；
In the method, in the process of the invention,A sudden change characteristic value sequence of a second packaging characteristic parameter corresponding to the jth parameter of the 3 rd row of the comprehensive characteristic matrix is represented; a cumulative sum of instantaneous magnitudes of a j-th parameter representing a second package characteristic; A cumulative sum of instantaneous magnitudes of a j-th parameter representing a first package characteristic; j represents parameters of the package characteristic parameters, wherein And respectively corresponding to the on-resistance, the saturation voltage drop and the short-circuit current parameters.
Wherein, the expression of the comprehensive characteristic matrix M is as follows:
；
In the method, in the process of the invention, A characteristic value sequence representing the root mean square value of a second packaging characteristic parameter corresponding to the jth parameter of the 1 st row of the comprehensive characteristic matrix; Representing a harmonic characteristic value sequence of a second packaging characteristic parameter corresponding to the jth parameter of the 2 nd row of the comprehensive characteristic matrix; A sudden change characteristic value sequence of a second packaging characteristic parameter corresponding to the jth parameter of the 3 rd row of the comprehensive characteristic matrix is represented; j represents parameters of the package characteristic parameters, wherein And respectively corresponding to the on-resistance, the saturation voltage drop and the short-circuit current parameters.
The method for detecting the encapsulation of the silicon carbide MOS device by generating the comprehensive feature matrix through the Hilbert transform method, the discrete Fourier transform method and the Hilbert-Huang transform method eliminates the limitation of a single digital protection algorithm and realizes high-precision detection of the encapsulation state of the silicon carbide MOS device.
Specifically, the step 3 includes:
Comparing the comprehensive characteristic matrix with a preset standard comprehensive characteristic matrix to obtain an on-resistance parameter comparison result, a saturation voltage drop parameter comparison result and a short-circuit current parameter comparison result;
Obtaining a detection result of the silicon carbide MOS device package according to the resistance parameter comparison result, the saturation voltage drop parameter comparison result and the short-circuit current parameter comparison result;
When the comparison result of the on-resistance parameters shows that the on-resistance parameters are increased compared with the normal on-resistance parameters, judging that the detection result is that the encapsulation of the silicon carbide MOS device is abnormal, otherwise, judging that the detection result is that the encapsulation of the silicon carbide MOS device is normal;
the on-resistance is calculated as follows:
；
In the method, in the process of the invention, Representing the on-resistance of the silicon carbide MOS device; Representing the pole voltage of a silicon carbide MOS device; representing the on-current of the silicon carbide MOS device; Indicating the junction temperature Is a function of (2); Representing the bond wire resistance of the silicon carbide MOS device.
From the above, it can be seen that the failure of the bonding wire can result in the on-resistanceAn influence is exerted on the surface of the substrate,Increasing one of the important characteristics of the package aging of the silicon carbide MOS device;
wherein, Although not limited byThe change is influenced but is easily influenced by the change of junction temperature, so the invention is realized byWhen judging the packaging state of the silicon carbide MOS device, the junction temperature pair is eliminated in advanceIs a function of (a) and (b).
When the comparison result of the saturation voltage drop parameters shows that the saturation voltage drop parameters are increased by more than or equal to 5% from the normal saturation voltage drop, judging that the detection result is abnormal in encapsulation of the silicon carbide MOS device, otherwise, judging that the detection result is normal in encapsulation of the silicon carbide MOS device;
Wherein the saturation pressure drop Refers to the voltage between the collector and the emitter when the silicon carbide MOS device is saturated and turned on,
；
In the method, in the process of the invention,Representing the saturation voltage drop of a silicon carbide MOS device; Representing the on-state voltage drop of the silicon carbide MOS device; Representing the bond wire resistance of the silicon carbide MOS device; representing the on-current of the silicon carbide MOS device;
wherein the failure of the bonding wire will lead to Increase and thereby causeIncrease and thusIs one of important characteristics for detecting the encapsulation state of the silicon carbide MOS device;
Generally by The increase of 5% is used as the packaging failure standard of the silicon carbide MOS device, wherein,And the aging degree of the silicon carbide MOS device package is gradually increased.
And when the comparison result of the short-circuit current parameters shows that the short-circuit current parameters are reduced compared with the normal short-circuit current parameters, judging that the detection result is that the encapsulation of the silicon carbide MOS device is abnormal, otherwise, judging that the detection result is that the encapsulation of the silicon carbide MOS device is normal.
When a short circuit occurs in the silicon carbide MOS device, the short circuit current calculation formula of the silicon carbide MOS device working in the current saturation mode is as follows:
；
wherein, ；
In the method, in the process of the invention,Representing a short circuit current; Representing inversion layer electron mobility in a silicon carbide MOS device; representing oxide capacitance; Representing the channel width of a silicon carbide MOS device; representing the channel length of a silicon carbide MOS device; representing the transistor common base current gain in a silicon carbide MOS device; Representing the gate voltage; representing a threshold voltage; representing the gate drive voltage; Representing the bond wire resistance of the silicon carbide MOS device;
As can be seen from the above, when the bond wire ages, The number of the cells to be processed is increased,A reduction;
At this time In a descending trend, the research shows thatDecreasing with increasing bonding wire ageing degree, andThe sensitivity to the aging degree of the bonding wires is extremely high, and even the difference of the failure numbers of the bonding wires can be reflected;
Wherein, the invention can eliminate junction temperature pair in advance when judging the packaging state of the silicon carbide MOS device Is a function of (a) and (b).
Example 2:
the invention provides a silicon carbide MOS device packaging detection system module connection diagram, which is shown in fig. 2:
The parameter acquisition module is used for acquiring bonding wire state signals of the packaged silicon carbide MOS device, and screening to obtain packaging characteristic parameters of the silicon carbide MOS device in normal and failure states of the bonding wire according to the bonding wire state signals;
The matrix generation module is used for generating a comprehensive feature matrix corresponding to the packaging feature parameters through Hilbert transformation, discrete Fourier transformation and Hilbert-Huang transformation based on the packaging feature parameters of the silicon carbide MOS device in the normal and failure states of the bonding wire;
And the packaging detection module is used for comparing the comprehensive characteristic matrix with a preset standard comprehensive characteristic matrix to obtain a detection result of the silicon carbide MOS device packaging.
Specifically, the parameter acquisition module is specifically configured to:
Acquiring bonding wire state signals of the packaged silicon carbide MOS device, and performing signal classification according to the bonding wire state signals to acquire a signal classification result;
Wherein the signal classification result includes: a bonding wire normal state signal and a bonding wire failure state signal;
based on the signal classification result, signal data screening is carried out to obtain the packaging characteristic parameters of the silicon carbide MOS device in the normal and failure states of the bonding wire;
taking the packaging characteristic parameter of the silicon carbide MOS device in a normal state of the bonding wire as a first packaging characteristic parameter;
And taking the packaging characteristic parameter of the silicon carbide MOS device in the bonding wire failure state as a second packaging characteristic parameter.
Each parameter in the package characteristic parameters in the parameter acquisition module comprises one or more of the following: on-resistance, saturation voltage drop, and short circuit current.
Specifically, the matrix generation module is specifically configured to:
calculating the envelope value of each parameter of the second packaging characteristic parameter by adopting Hilbert transform according to the second packaging characteristic parameter;
calculating the root mean square value of each parameter of the second packaging characteristic parameter based on the envelope value of each parameter of the second packaging characteristic parameter;
Generating a characteristic value sequence of the root mean square value of the second packaging characteristic parameter based on the root mean square value of each parameter of the second packaging characteristic parameter and the root mean square value of each parameter of the first packaging characteristic parameter;
based on the second packaging characteristic parameters, calculating the maximum amplitude of fundamental waves, the maximum amplitude of odd harmonics and the maximum amplitude of even harmonics of each parameter of the second packaging characteristic parameters by adopting discrete Fourier transform;
generating a harmonic characteristic value sequence of the second packaging characteristic parameter based on the fundamental wave maximum amplitude, the odd harmonic maximum amplitude and the even harmonic maximum amplitude of each parameter of the second packaging characteristic parameter;
Generating an instantaneous amplitude accumulation sum of each parameter of the second packaging characteristic parameter by Hilbert-Huang transformation in a preset packaging period of each parameter of the second packaging characteristic parameter;
Generating a sudden change characteristic value sequence of the second packaging characteristic parameter based on the instantaneous amplitude accumulation sum of each parameter of the second packaging characteristic parameter and the instantaneous amplitude accumulation sum of each parameter of the first packaging characteristic parameter;
and generating a comprehensive feature matrix corresponding to the second packaging feature parameter based on the feature value sequence, the harmonic feature value sequence and the abrupt feature value sequence of the root mean square value of the second packaging feature parameter.
And a characteristic value sequence of the root mean square value of the second packaging characteristic parameter in the matrix generation module is generated according to the following formula:
；
wherein, ；
In the method, in the process of the invention,A characteristic value sequence representing the root mean square value of a second packaging characteristic parameter corresponding to the jth parameter of the 1 st row of the comprehensive characteristic matrix; A root mean square value of a j-th parameter representing the first package characteristic; a root mean square value of a j-th parameter representing a second package characteristic; j represents parameters of the package characteristic parameters, wherein And respectively corresponding to the on-resistance, the saturation voltage drop and the short-circuit current parameters.
The harmonic characteristic value sequence of the second packaging characteristic parameter in the matrix generation module is generated according to the following formula:
；
wherein, ；
In the method, in the process of the invention,Representing a harmonic characteristic value sequence of a second packaging characteristic parameter corresponding to the jth parameter of the 2 nd row of the comprehensive characteristic matrix; An even harmonic maximum amplitude of a j-th parameter representing a second package characteristic; An odd harmonic maximum amplitude of a j-th parameter representing a second package characteristic; One half of the maximum amplitude of the fundamental wave of the j-th parameter representing the second package characteristic; j represents parameters of the package characteristic parameters, wherein And respectively corresponding to the on-resistance, the saturation voltage drop and the short-circuit current parameters.
The abrupt characteristic value sequence of the second packaging characteristic parameter in the matrix generation module is generated according to the following formula:
；
wherein, ；
In the method, in the process of the invention,A sudden change characteristic value sequence of a second packaging characteristic parameter corresponding to the jth parameter of the 3 rd row of the comprehensive characteristic matrix is represented; a cumulative sum of instantaneous magnitudes of a j-th parameter representing a second package characteristic; A cumulative sum of instantaneous magnitudes of a j-th parameter representing a first package characteristic; j represents parameters of the package characteristic parameters, wherein And respectively corresponding to the on-resistance, the saturation voltage drop and the short-circuit current parameters.
Specifically, the package detection module is specifically configured to:
Comparing the comprehensive characteristic matrix with a preset standard comprehensive characteristic matrix to obtain an on-resistance parameter comparison result, a saturation voltage drop parameter comparison result and a short-circuit current parameter comparison result;
Obtaining a detection result of the silicon carbide MOS device package according to the resistance parameter comparison result, the saturation voltage drop parameter comparison result and the short-circuit current parameter comparison result;
When the comparison result of the on-resistance parameters shows that the on-resistance parameters are increased compared with the normal on-resistance parameters, judging that the detection result is that the encapsulation of the silicon carbide MOS device is abnormal, otherwise, judging that the detection result is that the encapsulation of the silicon carbide MOS device is normal;
When the comparison result of the saturation voltage drop parameters shows that the saturation voltage drop parameters are increased by more than or equal to 5% from the normal saturation voltage drop, judging that the detection result is abnormal in encapsulation of the silicon carbide MOS device, otherwise, judging that the detection result is normal in encapsulation of the silicon carbide MOS device;
And when the comparison result of the short-circuit current parameters shows that the short-circuit current parameters are reduced compared with the normal short-circuit current parameters, judging that the detection result is that the encapsulation of the silicon carbide MOS device is abnormal, otherwise, judging that the detection result is that the encapsulation of the silicon carbide MOS device is normal.
The on-resistance in the package detection module is calculated as follows:
；
In the method, in the process of the invention, Representing the on-resistance of the silicon carbide MOS device; Representing the pole voltage of a silicon carbide MOS device; representing the on-current of the silicon carbide MOS device; Indicating the junction temperature Is a function of (2); Representing the bond wire resistance of the silicon carbide MOS device.
It will be appreciated by those skilled in the art that embodiments of the present invention may be provided as a method, system, or computer program product. Accordingly, the present invention may take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects. Furthermore, the present invention may take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, and the like) having computer-usable program code embodied therein.
The present invention is described with reference to flowchart illustrations and/or block diagrams of methods, apparatus (systems) and computer program products according to embodiments of the invention. It will be understood that each flow and/or block of the flowchart illustrations and/or block diagrams, and combinations of flows and/or blocks in the flowchart illustrations and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create means for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instruction means which implement the function specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
Finally, it should be noted that the foregoing embodiments are merely for illustrating the technical solution of the present invention and not for limiting the scope of protection thereof, and although the present invention has been described in detail with reference to the foregoing embodiments, it should be understood by those skilled in the art that various changes, modifications or equivalents may be made to the specific embodiments of the application after reading the present invention, and these changes, modifications or equivalents are within the scope of protection of the claims appended hereto.

Claims (4)

1. The method for detecting the encapsulation of the silicon carbide MOS device is characterized by comprising the following steps of:
Acquiring a bonding wire state signal of the packaged silicon carbide MOS device, and screening to obtain packaging characteristic parameters of the silicon carbide MOS device in normal and failure states of the bonding wire according to the bonding wire state signal;
Based on the encapsulation characteristic parameters of the silicon carbide MOS device in the normal and failure states of the bonding wire, generating a comprehensive characteristic matrix corresponding to the encapsulation characteristic parameters through Hilbert transformation, discrete Fourier transformation and Hilbert-Huang transformation;
comparing the comprehensive feature matrix with a preset standard comprehensive feature matrix to obtain a detection result of the silicon carbide MOS device package;
the method for obtaining the bonding wire state signal of the packaged silicon carbide MOS device comprises the steps of screening and obtaining the packaging characteristic parameters of the silicon carbide MOS device in the normal and failure states of the bonding wire according to the bonding wire state signal, and comprises the following steps:
Acquiring bonding wire state signals of the packaged silicon carbide MOS device, and performing signal classification according to the bonding wire state signals to acquire a signal classification result;
Wherein the signal classification result includes: a bonding wire normal state signal and a bonding wire failure state signal;
based on the signal classification result, signal data screening is carried out to obtain the packaging characteristic parameters of the silicon carbide MOS device in the normal and failure states of the bonding wire;
taking the packaging characteristic parameter of the silicon carbide MOS device in a normal state of the bonding wire as a first packaging characteristic parameter;
Taking the packaging characteristic parameter of the silicon carbide MOS device in a bonding wire failure state as a second packaging characteristic parameter;
According to the packaging characteristic parameters of the silicon carbide MOS device in the normal and failure states of the bonding wire, generating a comprehensive characteristic matrix corresponding to the packaging characteristic parameters through Hilbert transform, discrete Fourier transform and Hilbert-Huang transform, wherein the method comprises the following steps:
calculating the envelope value of each parameter of the second packaging characteristic parameter by adopting Hilbert transform according to the second packaging characteristic parameter;
calculating the root mean square value of each parameter of the second packaging characteristic parameter based on the envelope value of each parameter of the second packaging characteristic parameter;
Generating a characteristic value sequence of the root mean square value of the second packaging characteristic parameter based on the root mean square value of each parameter of the second packaging characteristic parameter and the root mean square value of each parameter of the first packaging characteristic parameter;
based on the second packaging characteristic parameters, calculating the maximum amplitude of fundamental waves, the maximum amplitude of odd harmonics and the maximum amplitude of even harmonics of each parameter of the second packaging characteristic parameters by adopting discrete Fourier transform;
generating a harmonic characteristic value sequence of the second packaging characteristic parameter based on the fundamental wave maximum amplitude, the odd harmonic maximum amplitude and the even harmonic maximum amplitude of each parameter of the second packaging characteristic parameter;
Generating an instantaneous amplitude accumulation sum of each parameter of the second packaging characteristic parameter by Hilbert-Huang transformation in a preset packaging period of each parameter of the second packaging characteristic parameter;
Generating a sudden change characteristic value sequence of the second packaging characteristic parameter based on the instantaneous amplitude accumulation sum of each parameter of the second packaging characteristic parameter and the instantaneous amplitude accumulation sum of each parameter of the first packaging characteristic parameter;
Generating a comprehensive feature matrix corresponding to the second packaging feature parameter based on the feature value sequence, the harmonic feature value sequence and the abrupt feature value sequence of the second packaging feature parameter root mean square value;
The characteristic value sequence of the second packaging characteristic parameter root mean square value is generated according to the following formula:
Wherein M 1,j＝βV,j-NOMV,j;
Wherein M 1,j represents a characteristic value sequence of root mean square values of second packaging characteristic parameters corresponding to the jth parameter of the 1 st row of the comprehensive characteristic matrix; NOM V,j represents the root mean square value of the j-th parameter of the first package characteristic; beta V,j represents the root mean square value of the j-th parameter of the second package characteristic; j represents each parameter in the package characteristic parameters, wherein j=1, 2 and 3 respectively correspond to the on-resistance, the saturation voltage drop and the short-circuit current parameters;
The harmonic characteristic value sequence of the second packaging characteristic parameter is generated according to the following formula:
wherein,
Wherein M 2,j represents a harmonic characteristic value sequence of a second packaging characteristic parameter corresponding to the jth parameter of the 2 nd row of the comprehensive characteristic matrix; p γ,j represents the even harmonic maximum amplitude of the j-th parameter of the second package characteristic; p ζ,j denotes the maximum amplitude of the odd harmonic of the j-th parameter of the second package characteristic; a represents one half of the maximum amplitude of the fundamental wave of the j-th parameter of the second package characteristic parameter; j represents each parameter in the package characteristic parameters, wherein j=1, 2 and 3 respectively correspond to the on-resistance, the saturation voltage drop and the short-circuit current parameters;
the abrupt characteristic value sequence of the second packaging characteristic parameter is generated according to the following formula:
wherein M 3,j＝SV,j-SNOM,j;
Wherein M 3,j represents a mutation characteristic value sequence of a second packaging characteristic parameter corresponding to the jth parameter of the 3 rd row of the comprehensive characteristic matrix; s V,j represents the instantaneous magnitude accumulation sum of the j-th parameter of the second package characteristic; s NOM,j represents the instantaneous magnitude accumulation sum of the j-th parameter of the first package characteristic; j represents each parameter in the package characteristic parameters, wherein j=1, 2 and 3 respectively correspond to the on-resistance, the saturation voltage drop and the short-circuit current parameters;
Wherein, the expression of the comprehensive characteristic matrix M is as follows:
Wherein M 1,j represents a characteristic value sequence of root mean square values of second packaging characteristic parameters corresponding to the jth parameter of the 1 st row of the comprehensive characteristic matrix; m 2,j represents a harmonic characteristic value sequence of a second packaging characteristic parameter corresponding to the jth parameter of the 2 nd row of the comprehensive characteristic matrix; m 3,j represents a mutation characteristic value sequence of a second packaging characteristic parameter corresponding to the jth parameter of the 3 rd row of the comprehensive characteristic matrix; j represents each parameter in the package characteristic parameters, wherein j=1, 2 and 3 respectively correspond to the on-resistance, the saturation voltage drop and the short-circuit current parameters.
2. The method for detecting the silicon carbide MOS device package of claim 1, wherein comparing the integrated feature matrix with a preset standard integrated feature matrix to obtain a detection result of the silicon carbide MOS device package comprises:
Comparing the comprehensive characteristic matrix with a preset standard comprehensive characteristic matrix to obtain an on-resistance parameter comparison result, a saturation voltage drop parameter comparison result and a short-circuit current parameter comparison result;
Obtaining a detection result of the silicon carbide MOS device package according to the resistance parameter comparison result, the saturation voltage drop parameter comparison result and the short-circuit current parameter comparison result;
When the comparison result of the on-resistance parameters shows that the on-resistance parameters are increased compared with the normal on-resistance parameters, judging that the detection result is that the encapsulation of the silicon carbide MOS device is abnormal, otherwise, judging that the detection result is that the encapsulation of the silicon carbide MOS device is normal;
When the comparison result of the saturation voltage drop parameters shows that the saturation voltage drop parameters are increased by more than or equal to 5% from the normal saturation voltage drop, judging that the detection result is abnormal in encapsulation of the silicon carbide MOS device, otherwise, judging that the detection result is normal in encapsulation of the silicon carbide MOS device;
And when the comparison result of the short-circuit current parameters shows that the short-circuit current parameters are reduced compared with the normal short-circuit current parameters, judging that the detection result is that the encapsulation of the silicon carbide MOS device is abnormal, otherwise, judging that the detection result is that the encapsulation of the silicon carbide MOS device is normal.
3. The method for detecting a silicon carbide MOS device package of claim 2, wherein the on-resistance is calculated as follows:
Wherein R ON represents the on-resistance of the silicon carbide MOS device; v CE represents the pole voltage of the silicon carbide MOS device; i ON represents the on-current of the silicon carbide MOS device; f (T) represents a function with respect to junction temperature T; r W represents the bond wire resistance of the silicon carbide MOS device.
4. A silicon carbide MOS device package inspection system, comprising:
The parameter acquisition module is used for acquiring bonding wire state signals of the packaged silicon carbide MOS device, and screening to obtain packaging characteristic parameters of the silicon carbide MOS device in normal and failure states of the bonding wire according to the bonding wire state signals;
The matrix generation module is used for generating a comprehensive feature matrix corresponding to the packaging feature parameters through Hilbert transformation, discrete Fourier transformation and Hilbert-Huang transformation based on the packaging feature parameters of the silicon carbide MOS device in the normal and failure states of the bonding wire;
The packaging detection module is used for comparing the comprehensive characteristic matrix with a preset standard comprehensive characteristic matrix to obtain a detection result of the silicon carbide MOS device packaging;
the parameter acquisition module is specifically used for:
Acquiring bonding wire state signals of the packaged silicon carbide MOS device, and performing signal classification according to the bonding wire state signals to acquire a signal classification result;
Wherein the signal classification result includes: a bonding wire normal state signal and a bonding wire failure state signal;
based on the signal classification result, signal data screening is carried out to obtain the packaging characteristic parameters of the silicon carbide MOS device in the normal and failure states of the bonding wire;
taking the packaging characteristic parameter of the silicon carbide MOS device in a normal state of the bonding wire as a first packaging characteristic parameter;
Taking the packaging characteristic parameter of the silicon carbide MOS device in a bonding wire failure state as a second packaging characteristic parameter;
the matrix generation module is specifically configured to:
calculating the envelope value of each parameter of the second packaging characteristic parameter by adopting Hilbert transform according to the second packaging characteristic parameter;
calculating the root mean square value of each parameter of the second packaging characteristic parameter based on the envelope value of each parameter of the second packaging characteristic parameter;
Generating a characteristic value sequence of the root mean square value of the second packaging characteristic parameter based on the root mean square value of each parameter of the second packaging characteristic parameter and the root mean square value of each parameter of the first packaging characteristic parameter;
based on the second packaging characteristic parameters, calculating the maximum amplitude of fundamental waves, the maximum amplitude of odd harmonics and the maximum amplitude of even harmonics of each parameter of the second packaging characteristic parameters by adopting discrete Fourier transform;
generating a harmonic characteristic value sequence of the second packaging characteristic parameter based on the fundamental wave maximum amplitude, the odd harmonic maximum amplitude and the even harmonic maximum amplitude of each parameter of the second packaging characteristic parameter;
Generating an instantaneous amplitude accumulation sum of each parameter of the second packaging characteristic parameter by Hilbert-Huang transformation in a preset packaging period of each parameter of the second packaging characteristic parameter;
Generating a sudden change characteristic value sequence of the second packaging characteristic parameter based on the instantaneous amplitude accumulation sum of each parameter of the second packaging characteristic parameter and the instantaneous amplitude accumulation sum of each parameter of the first packaging characteristic parameter;
Generating a comprehensive feature matrix corresponding to the second packaging feature parameter based on the feature value sequence, the harmonic feature value sequence and the abrupt feature value sequence of the second packaging feature parameter root mean square value;
And a characteristic value sequence of the root mean square value of the second packaging characteristic parameter in the matrix generation module is generated according to the following formula:
Wherein M 1,j＝βV,j-NOMV,j;
Wherein M 1,j represents a characteristic value sequence of root mean square values of second packaging characteristic parameters corresponding to the jth parameter of the 1 st row of the comprehensive characteristic matrix; NOM V,j represents the root mean square value of the j-th parameter of the first package characteristic; beta V,j represents the root mean square value of the j-th parameter of the second package characteristic; j represents each parameter in the package characteristic parameters, wherein j=1, 2 and 3 respectively correspond to the on-resistance, the saturation voltage drop and the short-circuit current parameters;
The harmonic characteristic value sequence of the second packaging characteristic parameter in the matrix generation module is generated according to the following formula:
wherein,
Wherein M 2,j represents a harmonic characteristic value sequence of a second packaging characteristic parameter corresponding to the jth parameter of the 2 nd row of the comprehensive characteristic matrix; p γ,j represents the even harmonic maximum amplitude of the j-th parameter of the second package characteristic; p ζ,j denotes the maximum amplitude of the odd harmonic of the j-th parameter of the second package characteristic; a represents one half of the maximum amplitude of the fundamental wave of the j-th parameter of the second package characteristic parameter; j represents each parameter in the package characteristic parameters, wherein j=1, 2 and 3 respectively correspond to the on-resistance, the saturation voltage drop and the short-circuit current parameters;
the abrupt characteristic value sequence of the second packaging characteristic parameter in the matrix generation module is generated according to the following formula:
wherein M 3,j＝SV,j-SNOM,j;
Wherein M 3,j represents a mutation characteristic value sequence of a second packaging characteristic parameter corresponding to the jth parameter of the 3 rd row of the comprehensive characteristic matrix; s V,j represents the instantaneous magnitude accumulation sum of the j-th parameter of the second package characteristic; s NOM,j represents the instantaneous magnitude accumulation sum of the j-th parameter of the first package characteristic; j represents each parameter in the package characteristic parameters, wherein j=1, 2 and 3 respectively correspond to the on-resistance, the saturation voltage drop and the short-circuit current parameters;
Wherein, the expression of the comprehensive characteristic matrix M is as follows:
Wherein M 1,j represents a characteristic value sequence of root mean square values of second packaging characteristic parameters corresponding to the jth parameter of the 1 st row of the comprehensive characteristic matrix; m 2,j represents a harmonic characteristic value sequence of a second packaging characteristic parameter corresponding to the jth parameter of the 2 nd row of the comprehensive characteristic matrix; m 3,j represents a mutation characteristic value sequence of a second packaging characteristic parameter corresponding to the jth parameter of the 3 rd row of the comprehensive characteristic matrix;
j represents each parameter in the package characteristic parameters, wherein j=1, 2 and 3 respectively correspond to the on-resistance, the saturation voltage drop and the short-circuit current parameters.
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