CN112699579A - IGBT state monitoring method based on finite element simulation - Google Patents
IGBT state monitoring method based on finite element simulation Download PDFInfo
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Abstract
The invention discloses an IGBT state monitoring method based on finite element simulation, which comprises the following steps: s1, obtaining historical data of the IGBT module Vce, on; s2, establishing a failure physical model of the bonding wire degradation process; s3, establishing a state space equation of the bonding wire degradation process; s4, determining the unknown quantity of Vce and on correction equation through a parameter learning algorithm; and S5, state estimation. The invention discloses the relation between the increase of the IGBT module Vce, on and the degradation of the bonding wire, establishes an accurate model of the degradation of the bonding wire of the IGBT module, and estimates the current crack length by utilizing an edge resampling moving algorithm based on particles so as to carry out state estimation. Compared with the traditional state monitoring method, the method has the advantages that time cost and economic cost are reduced, monitoring errors are reduced, and the reliability of the IGBT is improved.
Description
Technical Field
The invention relates to the field of semiconductors, in particular to an IGBT state monitoring method based on finite element simulation.
Background
Power electronic converters based on IGBTs (insulated gate bipolar transistors) are widely used in modern industry, including wind generators, electric vehicles, power transmission systems, etc. The reliability problem of the power electronic converter is also increasingly highlighted, and the power electronic components are one of the main failure sources of the system. From the viewpoint of safety and economy, the reliability of the converter, particularly the reliability of the power electronic components, has attracted much attention.
Package failures are one of the most common failures in IGBT modules, due to mismatch in the coefficients of thermal expansion of the different materials inside the assembly. When the IGBT is operated, periodic power losses occur, resulting in temperature fluctuations inside the power module, and significant thermo-mechanical stresses will be introduced at the joints between the different material layers, resulting in higher thermal stresses being experienced by the bond wires and solder joints. In practical applications, the degradation of the bonding wire and the fatigue of the solder layer are two main failure mechanisms, and both of them can reduce the performance of the IGBT module over time, and if no proper measures are taken, the device can be damaged, and the operation and safety of the whole system are affected.
Condition monitoring is an effective method for improving the reliability of the IGBT. The state monitoring is mainly to monitor the parameter index of the IGBT on line to know the current operation condition of the IGBT, and once an unhealthy state or fault is detected, further operation is carried out to avoid catastrophic consequences.
Vce, on (turn-on voltage between the collector and emitter of the IGBT) is the most commonly selected parameter, on which many state monitoring methods have been studied. Although the prior art has achieved certain success, certain challenges exist, such as that as the IGBT ages, the case temperature and the metal restructuring of the solder layer have a large effect on Vce, on measurement, and how to reduce these effects is a problem at present.
Disclosure of Invention
Vce and on are good indexes of state monitoring, a bonding wire is one of the parts of the IGBT module which are easy to damage, and in order to reveal the relation between the increase of the Vce and on of the IGBT module and the degradation state of the bonding wire and estimate the current state of the IGBT, the invention provides an IGBT state monitoring method based on finite element simulation. The method is realized from model establishment to algorithm implementation without carrying out a large number of power cycle tests, and compared with the traditional state monitoring method, the method has the advantages of reducing time cost and economic cost and improving the reliability of the IGBT.
In order to achieve the purpose of the invention, the invention adopts the technical scheme that:
the IGBT state monitoring method based on finite element simulation comprises the following steps:
s1, obtaining historical data of the IGBT module Vce, on;
s2, establishing a failure physical model of the bonding wire degradation process;
s3, establishing a state space equation of the bonding wire degradation process;
s4, determining the unknown quantity of Vce and on correction equation through a parameter learning algorithm;
and S5, state estimation.
Further, the specific method of step S1 is:
and establishing a data acquisition unit, continuously acquiring Vce and on data of the IGBT, and storing the data.
Further, the specific method of step S2 is:
and obtaining the relation between the increase of the bonding wire Vce, on and the crack length of the bonding wire through finite element simulation.
Further, the specific method of step S3 includes the following sub-steps:
s3-1, selecting a Paris equation to describe crack propagation to obtain a state equation of the crack propagation, wherein the state equation is expressed in that the change rate of the crack length on the thermal cycle number and a stress intensity factor form an exponential relation, and the stress intensity factor can be obtained from a stress-strain curve of a bonding line;
s3-2, compensating the influence of temperature change on Vce, on, and correcting temperature quantity delta Vce,on,TExpressed as the product of the temperature coefficient and the current temperature minus the reference temperature;
s3-3, compensating the influence of metal reconstruction on Vce, on, and correcting quantity delta V of metal reconstructionce,on,MExpressed as:
ΔVce,on,M＝1.6×10-17kVce,on,rΔT5.165
wherein k is an unknown parameter; vce,on,rIs a Vce,onA reference value of (d);delta T is the difference between the current temperature of the IGBT and the reference temperature;
s3-4, establishing a correction equation of Vce and on, wherein the corrected Vce and on are expressed as the superposition of reference Vce and on, temperature correction and metal reconstruction correction.
Further, the specific method of step S4 includes the following sub-steps:
s4-1, processing the sample by using a particle filter algorithm, and reducing the calculated amount;
s4-2, adjusting the weight of the sample, and approximating the target distribution by the weighted sample;
s4-3, estimating Vce by using a marginalized resampling motion algorithm based on particles, and correcting unknown parameters k of an equation in on mode.
Further, the specific method of step S5 includes the following sub-steps:
s5-1, bringing the determined parameter k back to a correction equation, calculating corrected Vce, on, and estimating the state a of the bond wire crack length, wherein the state a is expressed as the sum of products of each particle in the Vce, on state and a corresponding normalized weight value;
s5-2, calculating the stress intensity F of the bonding wire under the current state, wherein the stress intensity F is expressed as the product of the difference of the thermal expansion coefficients of the aluminum and the silicon and the square root of the state a of the crack length of the bonding wire;
and S5-3, judging whether the stress intensity exceeds the breaking stress intensity of the bonding wire, if so, indicating that the bonding wire reaches the failure standard, and recommending to immediately stop the machine for maintenance, otherwise, returning to the step S1.
The invention has the beneficial effects that: the invention provides an IGBT state monitoring method based on finite element simulation, a system model establishes an accurate model of IGBT module bonding wire degradation from a physical angle rather than simple curve fitting, and estimates the current crack length by using a particle-based edge resampling moving algorithm, thereby carrying out state estimation.
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FIG. 1 is a schematic flow diagram of the process.
Detailed Description
The following description of the embodiments of the present invention is provided to facilitate the understanding of the present invention by those skilled in the art, but it should be understood that the present invention is not limited to the scope of the embodiments, and it will be apparent to those skilled in the art that various changes may be made without departing from the spirit and scope of the invention as defined and defined in the appended claims, and all matters produced by the invention using the inventive concept are protected.
As shown in fig. 1, the IGBT state monitoring method based on finite element simulation includes the following steps:
s1, obtaining historical data of the IGBT module Vce, on;
s2, establishing a failure physical model of the bonding wire degradation process;
s3, establishing a state space equation of the bonding wire degradation process;
s4, determining the unknown quantity of Vce and on correction equation through a parameter learning algorithm;
and S5, state estimation.
The specific method of step S1 is:
and establishing a data acquisition unit, continuously acquiring Vce and on data of the IGBT, and storing the data.
The specific method of step S2 is:
and obtaining the relation between the increase of the bonding wire Vce, on and the crack length of the bonding wire through finite element simulation.
The specific method of step S3 includes the following substeps:
s3-1, selecting a Paris equation to describe crack propagation to obtain a state equation of the crack propagation, wherein the state equation is expressed in that the change rate of the crack length on the thermal cycle number and a stress intensity factor form an exponential relation, and the stress intensity factor can be obtained from a stress-strain curve of a bonding line;
s3-2, compensating the influence of temperature change on Vce, on, and correcting temperature quantity delta Vce,on,TExpressed as the product of the temperature coefficient and the current temperature minus the reference temperature;
s3-3, compensating the shadow of metal reconstruction on Vce, onSound and metal reconstruction correction quantity delta Vce,on,MExpressed as:
ΔVce,on,M＝1.6×10-17kVce,on,rΔT5.165
wherein k is an unknown parameter; vce,on,rIs a Vce,onA reference value of (d); delta T is the difference between the current temperature of the IGBT and the reference temperature;
s3-4, establishing a correction equation of Vce and on, wherein the corrected Vce and on are expressed as the superposition of reference Vce and on, temperature correction and metal reconstruction correction.
The specific method of step S4 includes the following substeps:
s4-1, processing the sample by using a particle filter algorithm, and reducing the calculated amount;
s4-2, adjusting the weight of the sample, and approximating the target distribution by the weighted sample;
s4-3, estimating Vce by using a marginalized resampling motion algorithm based on particles, and correcting unknown parameters k of an equation in on mode.
The specific method of step S5 includes the following substeps:
s5-1, bringing the determined parameter k back to a correction equation, calculating corrected Vce, on, and estimating the state a of the bond wire crack length, wherein the state a is expressed as the sum of products of each particle in the Vce, on state and a corresponding normalized weight value;
s5-2, calculating the stress intensity F of the bonding wire under the current state, wherein the stress intensity F is expressed as the product of the difference of the thermal expansion coefficients of the aluminum and the silicon and the square root of the state a of the crack length of the bonding wire;
and S5-3, judging whether the stress intensity exceeds the breaking stress intensity of the bonding wire, if so, indicating that the bonding wire reaches the failure standard, and recommending to immediately stop the machine for maintenance, otherwise, returning to the step S1.
In the specific implementation process, the IGBT module in a certain working state in the power electronic system is subjected to fault diagnosis, a bonding wire degradation model is established by acquiring historical data of Vce and on, the crack length and the stress intensity of the bonding wire are calculated, whether the stress intensity exceeds the fracture stress intensity of the IGBT bonding wire of the type is judged, if yes, the crack of the bonding wire is expanded to enter an unstable area, and the bonding wire is indicated to have a fault.
In summary, an IGBT state monitoring method based on finite element simulation is proposed herein. Vce and on are good indexes for state monitoring, the relation between the increase of the bonding wire Vce and on and the degradation state of the bonding wire can be revealed through finite element simulation, and an accurate bonding wire degradation model is established from the theory of a fracture mechanism. Compared with the traditional state monitoring method, the method does not need to carry out a large number of power cycle tests, can greatly reduce time cost and economic cost, has small monitoring error, and improves the reliability of power electronic components and even the whole power electronic system.
Claims (6)
1. The IGBT state monitoring method based on finite element simulation is characterized by comprising the following steps of:
s1, obtaining historical data of the IGBT module Vce, on;
s2, establishing a failure physical model of the bonding wire degradation process;
s3, establishing a state space equation of the bonding wire degradation process;
s4, determining the unknown quantity of Vce and on correction equation through a parameter learning algorithm;
and S5, state estimation.
2. The finite element simulation-based IGBT state monitoring method according to claim 1, wherein the specific method of step S1 is as follows:
and establishing a data acquisition unit, continuously acquiring Vce and on data of the IGBT, and storing the data.
3. The finite element simulation-based IGBT state monitoring method according to claim 1, wherein the specific method of step S2 is as follows:
and obtaining the relation between the increase of the bonding wire Vce, on and the crack length of the bonding wire through finite element simulation.
4. The finite element simulation-based IGBT state monitoring method according to claim 1, wherein the specific method of step S3 comprises the following sub-steps:
s3-1, selecting a Paris equation to describe crack propagation to obtain a state equation of the crack propagation, wherein the state equation is expressed in that the change rate of the crack length on the thermal cycle number and a stress intensity factor form an exponential relation, and the stress intensity factor can be obtained from a stress-strain curve of a bonding line;
s3-2, compensating the influence of temperature change on Vce, on, and correcting temperature quantity delta Vce,on,TExpressed as the product of the temperature coefficient and the current temperature minus the reference temperature;
s3-3, compensating the influence of metal reconstruction on Vce, on, and correcting quantity delta V of metal reconstructionce,on,MExpressed as:
ΔVce,on,M＝1.6×10-17k·Vce,on,r·ΔT5.165
wherein k is an unknown parameter; vce,on,rIs a Vce,onA reference value of (d); delta T is the difference between the current temperature of the IGBT and the reference temperature;
s3-4, establishing a correction equation of Vce and on, wherein the corrected Vce and on are expressed as the superposition of reference Vce and on, temperature correction and metal reconstruction correction.
5. The finite element simulation-based IGBT state monitoring method according to claim 1, wherein the specific method of step S4 comprises the following sub-steps:
s4-1, processing the sample by using a particle filter algorithm, and reducing the calculated amount;
s4-2, adjusting the weight of the sample, and approximating the target distribution by the weighted sample;
s4-3, estimating Vce by using a marginalized resampling motion algorithm based on particles, and correcting unknown parameters k of an equation in on mode.
6. The bonding wire-based IGBT life prediction method according to claim 1, characterized in that the specific method of step S5 comprises the following sub-steps:
s5-1, bringing the determined parameter k back to a correction equation, calculating corrected Vce, on, and estimating the state a of the bond wire crack length, wherein the state a is expressed as the sum of products of each particle in the Vce, on state and a corresponding normalized weight value;
s5-2, calculating the stress intensity F of the bonding wire under the current state, wherein the stress intensity F is expressed as the product of the difference of the thermal expansion coefficients of the aluminum and the silicon and the square root of the state a of the crack length of the bonding wire;
and S5-3, judging whether the stress intensity exceeds the breaking stress intensity of the bonding wire, if so, indicating that the bonding wire reaches the failure standard, and recommending to immediately stop the machine for maintenance, otherwise, returning to the step S1.
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| CN117195665A (en) * | 2023-11-07 | 2023-12-08 | 湖南大学 | Method for constructing life prediction model of bonding wire of power semiconductor device |
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