CN117626207A - Scanning ion beam sputtering coating device and method - Google Patents

Abstract

The invention relates to the technical field of sputter coating, in particular to a scanning ion beam sputter coating device and a scanning ion beam sputter coating method, which comprise a coating cavity, a substrate table, a sputter ion source, a sputter target table, a vacuum gas circuit system, a loading and unloading cavity and an adjusting mechanism, wherein the loading and unloading cavity is communicated with the coating cavity, the adjusting mechanism comprises an auxiliary ion source and a cleaning ion source, and a process correction mechanism for improving the uniformity of the film thickness of a substrate is further arranged on the substrate table. The fixed-point quantitative deterministic additive processing of the workpiece surface is realized through the steps of substrate surface preparation scanning, data analysis and processing, additive coating scheme planning, dynamic ion beam adjustment, real-time monitoring and feedback adjustment, quality inspection after coating, data recording and processing and the like. The invention can accurately measure and control the shape and volume of the sputtering coating in unit time, shortens the time for establishing vacuum, improves the coating efficiency, does not damage the surface type precision of the substrate, and can also improve the mirror processing efficiency.

Description

Scanning ion beam sputtering coating device and method

Technical Field

The invention relates to the technical field of sputter coating, in particular to a scanning ion beam sputter coating device and a scanning ion beam sputter coating method.

Background

Ion beam sputtering coating is a Physical Vapor Deposition (PVD) technology, and utilizes the ion sputtering principle to bombard the surface of a target material by ion beams emitted by an ion source, and when atoms on the surface of the target material obtain enough energy to get rid of the surface binding energy, the atoms can be separated from the surface of a substrate, and materials are sputtered out and directionally attached on the surface of the substrate, so that the coating treatment of the surface of the substrate is realized. The ion beam sputtering coating film is a common method for preparing the film due to the advantages of high film quality, compact film layer, few defects and the like.

The existing process chamber does not have the function of independently loading and unloading the film chamber, the process chamber needs to be opened every time the cleaning and film coating are completed, the time for establishing vacuum is long, the effective working time is short, and the film coating efficiency is low; in addition, the existing process chamber does not have the functions of automatically adjusting the cleaning angle and the coating angle and on-line monitoring of the coating layer; in addition, the existing correction plate does not have an angle adjusting function and an automatic plate surface size adjusting function, cannot monitor the surface of the substrate in real time and adjust the correction angle and the direction, and is difficult to meet the requirements of materials with different crystal orientations on the deposition angle of the substrate. Based on the defects, the existing ion beam coating equipment is difficult to meet the requirements of the substrate on the process with large size, high uniformity and low damage.

Disclosure of Invention

The invention provides a scanning ion beam sputtering coating device and a scanning ion beam sputtering coating method for solving the technical problems.

In order to achieve the above purpose, the invention adopts the following technical scheme:

the utility model provides a scanning ion beam sputtering coating device, includes coating film cavity, substrate platform, sputtering ion source, sputtering target platform and vacuum gas circuit system, substrate platform, sputtering ion source and sputtering target platform all set up in the coating film cavity, the sputtering ion source is towards the sputtering target platform, the sputtering target platform is towards the substrate platform, vacuum gas circuit system is put through with the coating film cavity, still includes loading and unloading piece cavity and adjustment mechanism, loading and unloading piece cavity and coating film cavity intercommunication, be provided with the spread groove that supplies the substrate platform to shuttle to remove between loading and unloading piece cavity and the coating film cavity, still be provided with the isolation valve of control break-make between loading and unloading piece cavity and the coating film cavity, adjustment mechanism rotatable set up in the coating film cavity and with substrate platform relative arrangement, adjustment mechanism includes auxiliary ion source and washs the ion source, still be provided with on the substrate platform and be used for improving the technology correction mechanism of substrate membrane thickness homogeneity.

Furthermore, the sputtering ion source and the sputtering target table are rotatably arranged in the film coating cavity, and the sputtering ion source and the sputtering target table are respectively connected with a control system for controlling the sputtering ion source and the sputtering target table to rotate. The sputtering ion source can increase the beam current density, improve the sputtering rate, reduce the scattering area of the ion beam and reduce pollution caused by scattered ion sputtering at places outside the target material. The sputtering target table is of a three-face water-cooling target surface structure, is vertically hung at the top of the coating cavity at an angle of 60 degrees, and can be coated with 3 films of different materials in a one-time clamping state; the sputtering target table is rotated by a servo motor, and is driven to rotate and position to the sputtering positions of different targets by the servo motor in the process of plating the multilayer film, and meanwhile, the sputtering position can be used as the center for carrying out side-to-side swinging motion in the sputtering process, so that the incidence angle of the ion beam is changed, and the area and uniformity of the deposited film are increased.

Further, the control system is also respectively connected with a block valve, a substrate table, a vacuum gas circuit system, an adjusting mechanism and a process correction mechanism, and comprises a driving motor and a PLC (programmable logic controller) which are arranged in the film coating cavity. The control system comprises a valve opening and closing system, a substrate table propulsion system, a substrate table rotating system and a positioning control system, wherein the valve opening and closing system is used for realizing the communication or the separation of the loading and unloading chamber and the coating chamber through a separation valve, so that the substrate of the loading and unloading chamber can be propelled or withdrawn to a sputtering station of the coating chamber; the substrate table propulsion system adopts a stepping motor, a driver receives high-speed pulses from a PLC, and the pulse frequency and the number determine the running speed and the running distance of the stepping motor; the substrate table rotating system adopts a common speed regulating motor for improving the uniformity of the deposited film in the circumferential direction of the substrate table in the film depositing process, the substrate adopts infrared heating, infrared light is directly radiated to the back surface of the slide glass disc, and the temperature of the substrate is detected by a thermocouple and is fed back to the industrial personal computer to realize automatic temperature control. The PLC is used as a system control core, and all the actions of the valve, the starting of the vacuum pump, the starting of the ion source power supply and the flow control of the process gas are realized by the PLC.

Further, the process correction mechanism comprises a first rotating rod, a second rotating rod and a correction plate, one end of the first rotating rod is fixedly connected to the substrate table, the other end of the first rotating rod is rotationally connected with the second rotating rod, the other end of the second rotating rod is rotationally connected with the correction plate, and the correction plate is located between the substrate table and the sputtering target table. The rotation of the first rotating rod and the second rotating rod is controlled through the driving motor, so that the azimuth and the angle of the correction plate are controlled, the final shape is formed through adjustment according to the process result, the sputtering deposition uniformity is improved, and the deposition of a large-size high-uniformity region is realized.

Further, the correction board includes dead lever and a plurality of group correction subassembly, arbitrary correction subassembly includes a axis of rotation and a correction piece, a plurality of the axis of rotation equidistant arrangement and symmetry set up in the both sides of dead lever, a plurality of the one end of correction piece is ladder structure and rotation axis connection, a plurality of the length of correction piece is by the middle part of dead lever to both ends arithmetic decrement, be provided with on the dead lever and be used for driving the pivoted actuating mechanism of several axis of rotation. The fixing rods are independently controlled by the driving mechanism to rotate, and the rotation directions are different according to the principle that the correction sheets are not touched with each other. Meanwhile, one ends of the correction sheets are connected with the rotating shaft in a stepped structure, and adjacent correction sheets are not mutually influenced in vertical height, so that the correction sheets can be guaranteed to be normally unfolded and stored when being rotationally stored. The maximum rotation amplitude of the rotating shaft is that the axis of the correcting sheet is vertical to the axis of the fixing rod, and whether the corresponding rotating shaft rotates or not can be independently controlled. Because the lengths of the plurality of correction sheets are gradually reduced from the middle part of the fixed rod to the two ends, when all the correction sheets are in an unfolding state, the top view of the correction plate is of an oval structure.

Further, the adjusting mechanism comprises a regulating part and a rotating part, and the auxiliary ion source and the cleaning ion source are respectively arranged at two ends of the rotating part. The auxiliary ion source can increase the sputtering area and improve the working efficiency. The cleaning ion source is used for carrying out ion beam cleaning on the substrate, removing dirt and oxide on the surface of the substrate and improving the adhesion between the film and the substrate; meanwhile, the cleaning ion source has an angle adjusting function, the angle of the cleaning ion source can be adjusted according to the process effect, and the cleaning uniformity and the cleaning area are improved.

Further, the vacuum gas circuit system comprises a first vacuum pump interface and a second vacuum pump interface, the first vacuum pump interface and the second vacuum pump interface are respectively communicated with the coating cavity, and the first vacuum pump interface and the second vacuum pump interface are respectively connected with the vacuum input end and the vacuum output end. The vacuum gas circuit system adopts a molecular pump and a direct-connection linear pump system, and the main valve adopts a gate valve, so that the partition is more reliable, and the gas leakage rate is smaller. The vacuum gas circuit system adopts a mass flow controller and an electric diaphragm valve, thereby ensuring accurate and stable gas supply and reliable partition.

A method for scanning an ion beam sputter coating device, comprising the steps of:

s1: the method comprises the steps of performing preliminary scanning on the surface of a substrate, performing high-precision scanning on the surface of the substrate by using a laser scanner, calculating surface characteristics by measuring a light beam reflection time difference, and setting the distance to d, namely d=c.t/2, wherein c is the light speed and t is the light beam round trip time;

s2: data analysis and processing, converting scanning data into a surface model by utilizing digital image processing and a 3D reconstruction algorithm, identifying pits and defects, analyzing the obtained surface scanning data, performing mathematical description on the surface shape by using an algorithm Zernike polynomial fitting, and finding out irregular parts;

s3: planning an additive coating scheme, namely using computer-aided software according to the scanning result of the step S2, and formulating a coating path and a material deposition amount according to the scanning data;

s4: dynamic ion beam adjustment, according to the design scheme of the step S3, adjusting the power, angle or residence time of the ion beam to carry out accurate coating, and a feedback control system adjusts parameters according to real-time data to control the deposition rate and accuracy, wherein the deposition quantity Q is calculated by Q=I.t.A.eta, wherein I is the ion current intensity, t is the residence time, A is the coverage area, eta is the deposition efficiency;

s5: real-time monitoring and feedback adjustment, wherein the surface monitoring system is continuously used for monitoring in the film coating process, real-time monitoring provides instant data, and the deposition process is ensuredThe synchronization measurement and feedback adjustment algorithm adjusts the parameters based on the deviation Δd, Δd=d, meeting predetermined requirements _desired -d _measured Where Δd is a critical feedback parameter representing the difference between the actual deposition thickness and the desired thickness, d _desired D, for the desired film thickness _measured The thickness of the coating film is actually measured;

s6: after finishing the coating, carrying out final full scanning to verify the surface quality and shape accuracy;

s7: and recording and processing data, recording all process data for subsequent analysis and quality assurance, and monitoring and optimizing the whole film coating process by database management and statistical analysis.

Compared with the prior art, the invention has the following beneficial effects:

1. according to the invention, the loading and unloading operation is only needed once through the loading and unloading chamber, the time for establishing vacuum is shortened, the coating efficiency is improved, meanwhile, the film layer of the substrate is monitored on line, the cleaning angle and the coating angle are regulated according to the calculation result, the surface of the substrate is monitored in real time, the angle and the azimuth of the correction plate are regulated, and the requirement of materials with different crystal orientations on the deposition angle of the substrate is met;

2. the invention can accurately measure and control the shape and volume (film covering function) of the sputtering film in unit time, and control the movement of the ion source and the target material through the residence time algorithm, thereby realizing fixed-point quantitative film adding and covering on the surface of the substrate, not only not damaging the surface type precision of the substrate, but also improving the mirror surface processing efficiency.

Drawings

FIG. 1 is a schematic diagram of the structure of the present invention;

FIG. 2 is a schematic structural view of a correction plate;

the attached drawings are identified: 1-coating chamber, 2-substrate stage, 3-sputtering ion source, 4-sputtering target stage, 5-vacuum gas circuit system, 6-loading and unloading chamber, 7-regulating mechanism, 8-isolating valve, 9-process correction mechanism, 10-first rotating rod, 11-second rotating rod, 12-correction plate, 13-fixed rod, 14-rotating shaft and 15-correction plate.

Detailed Description

For the purpose of making apparent the objects, technical solutions and advantages of the present invention, the present invention will be further described in detail with reference to the following examples and the accompanying drawings, wherein the exemplary embodiments of the present invention and the descriptions thereof are for illustrating the present invention only and are not to be construed as limiting the present invention.

Example 1

As shown in fig. 1 and 2, the scanning ion beam sputtering coating device disclosed by the invention comprises a coating chamber 1, a substrate table 2, a sputtering ion source 3, a sputtering target table 4 and a vacuum gas path system 5, wherein the substrate table 2, the sputtering ion source 3 and the sputtering target table 4 are all arranged in the coating chamber 1, the sputtering ion source 3 faces the sputtering target table 4, the sputtering target table 4 faces the substrate table 2, the vacuum gas path system 5 is communicated with the coating chamber 1, the scanning ion beam sputtering coating device further comprises a loading and unloading chamber 6 and an adjusting mechanism 7, the loading and unloading chamber 6 is communicated with the coating chamber 1, a connecting groove for the substrate table 2 to move in a shuttling manner is arranged between the loading and unloading chamber 6 and the coating chamber 1, a cut-off valve 8 for controlling on-off is further arranged between the loading and unloading chamber 6 and the coating chamber 1, the adjusting mechanism 7 is rotatably arranged in the coating chamber 1 and is opposite to the substrate table 2, the adjusting mechanism 7 comprises an auxiliary ion source and a cleaning ion source, and a process correction mechanism 9 for improving the uniformity of the film thickness of the substrate is further arranged on the substrate table 2.

Specifically, the coating chamber 1 is made of 1Cr18Ni9Ti stainless steel, the outer surface is subjected to sand blasting treatment, and the water cooling structure ensures that the temperature of the vacuum chamber wall is consistent, so that the ambient temperature of the sputtering chamber is basically kept unchanged, and the stable coating process is ensured; the door plate and the rear side wall of the coating chamber 1 are provided with observation windows, so that the deposition condition of the film in the coating chamber 1 can be conveniently known; the movable partition board is arranged in the film coating chamber 1, so that the chamber body is convenient to clean.

The sputtering ion source 3 and the sputtering target table 4 are rotatably arranged in the coating chamber 1, and the sputtering ion source 3 and the sputtering target table 4 are respectively connected with a control system for controlling the rotation of the sputtering ion source 3 and the sputtering target table 4. Specifically, the sputtering ion source 3 adopts an imported radio frequency focusing ion source, the beam diameter is 12cm, the radio frequency is 13.56MHz, and the adjustment range of ion beam energy and ion beam current is 0-1500 eV and 0-500 mA. The radio frequency focusing ion source can increase the beam current density, improve the sputtering rate, reduce the scattering area of the ion beam, and reduce pollution caused by scattered ion sputtering at places other than the target material. The sputtering target table 4 is of a three-face water-cooling target surface structure, is vertically hung at the top of the coating chamber 1 at an angle of 60 degrees, and can be coated with 3 films of different materials in a one-time clamping state; the sputtering target table 4 is rotated by a servo motor, and the sputtering target table 4 is driven by the servo motor to rotate and position to the sputtering positions of different targets in the process of plating the multilayer film, and meanwhile, the sputtering target table 4 can perform side-to-side swinging motion by taking the sputtering positions as the center in the sputtering process, so that the incidence angle of the ion beam is changed, and the area and uniformity of the deposited film are increased; when the magnetic fluid sealing device works, the servo motor drives the magnetic fluid to seal, so that the target surface can automatically change positions, and in order to improve film forming uniformity, the target surface can also swing back and forth at a small angle at an initial position.

The control system is also respectively connected with a block valve 8, a substrate table 2, a vacuum gas circuit system 5, an adjusting mechanism 7 and a process correction mechanism 9, and comprises a driving motor and a PLC (programmable logic controller) which are arranged in the film coating chamber 1. Specifically, the control system comprises a valve opening and closing system, a substrate table propulsion system, a substrate table rotation system and a positioning control system. The valve opening and closing system realizes the communication or the separation of the loading and unloading chamber 6 and the coating chamber 1 through the separating valve 8, and can realize the substrate of the loading and unloading chamber 6 to be pushed or withdrawn to a sputtering station of the coating chamber 1; the substrate table propulsion system adopts a stepping motor, a driver receives high-speed pulses from a PLC, the pulse frequency and the number determine the running speed and the running distance of the stepping motor, and the stepping motor does not have an encoder, belongs to an open-loop control system and adopts a travel switch to limit the running distance; the substrate table rotating system adopts a common speed regulating motor to improve the uniformity of the deposited film in the circumferential direction of the substrate table 2 in the film depositing process, the substrate adopts infrared heating, infrared light is directly radiated to the back surface of the slide glass disc, and the temperature of the substrate is detected by a thermocouple and is fed back to the industrial personal computer to realize automatic temperature control. The PLC is used as a system control core, and all the actions of the valve, the starting of the vacuum pump, the starting of the ion source power supply and the flow control of the process gas are realized by the PLC.

The process correction mechanism 9 comprises a first rotating rod 10, a second rotating rod 11 and a correction plate 12, wherein one end of the first rotating rod 10 is fixedly connected to the substrate table 2, the other end of the first rotating rod 10 is rotationally connected with the second rotating rod 11, the other end of the second rotating rod 11 is rotationally connected with the correction plate 12, and the correction plate 12 is positioned between the substrate table 2 and the sputtering target table 4. Specifically, the correction plate 12 is suitable for correcting the uniformity of deposited films of various targets, improves the uniformity of the films, and can solve the problem of uneven films with thick edges at the center of the films deposited on the substrate at low cost. The rotation of the first rotating rod 10 and the second rotating rod 11 is controlled by a driving motor, so that the direction and the angle of the correction plate 12 are controlled, the final shape is formed by adjusting according to the process result, the sputtering deposition uniformity is improved, and the deposition of a large-size high-uniformity region is realized.

The correction plate 12 comprises a fixed rod 13 and a plurality of groups of correction components, any correction component comprises a rotating shaft 14 and a correction sheet 15, the rotating shafts 14 are arranged at equal intervals and symmetrically arranged on two sides of the fixed rod 13, one ends of the correction sheets 15 are connected with the rotating shaft 14 and are distributed in a ladder structure, the lengths of the correction sheets 15 are gradually decreased from the middle part of the fixed rod 13 to two ends of the fixed rod, and a driving mechanism for driving the rotating shafts 14 to rotate is arranged on the fixed rod 13. Specifically, twelve rotating shafts 14 are respectively disposed on the left and right sides of the fixing rod 13, wherein the rotating directions of the upper left six rotating shafts 14 and the lower right six rotating shafts 14 are counterclockwise, and the rotating directions of the lower left six rotating shafts 14 and the upper right six rotating shafts 14 are clockwise. Meanwhile, one ends of the plurality of correction sheets 15 are connected with the rotating shaft 14 in a stepped structure, and adjacent correction sheets 15 are not affected in vertical height, so that the correction sheets 15 can be guaranteed to be normally unfolded and stored when being rotationally stored. The maximum rotation amplitude of the rotation shaft 14 is that the axis of the correction sheet 15 is perpendicular to the axis of the fixed rod 13, and whether the rotation of the corresponding rotation shaft 14 is controlled independently or not can be controlled. Since the lengths of the plurality of correction pieces 15 are equally reduced from the middle portion of the fixing lever 13 to both ends, the top view of the correction plate 12 is of an elliptical structure in the state where all the correction pieces 15 are unfolded. Compared with the existing correction plate, the correction plate 12 can be used for adjusting the correction plate 12 at any time by calculating and observing the coating degree of the substrate during working, so that the coating effect is ensured, the correction plate 12 is not required to be controlled and operated by opening the coating chamber 1, the operation steps are reduced, the time is shortened, and the working efficiency is improved.

The adjusting mechanism 7 comprises an adjusting and controlling part and a rotating part, and the auxiliary ion source and the cleaning ion source are respectively arranged at two ends of the rotating part. Specifically, the auxiliary ion source adopts an imported direct current divergent ion source, the beam diameter is 11cm, and the divergent auxiliary ion source can increase the sputtering area and improve the working efficiency. The cleaning ion source is used for carrying out ion beam cleaning on the substrate, removing dirt and oxide on the surface of the substrate and improving the adhesion between the film and the substrate; meanwhile, the cleaning ion source has an angle adjusting function, the angle of the cleaning ion source can be adjusted according to the process effect, and the cleaning uniformity and the cleaning area are improved.

The vacuum gas circuit system 5 comprises a first vacuum pump interface and a second vacuum pump interface, the first vacuum pump interface and the second vacuum pump interface are respectively communicated with the coating cavity 1, and the first vacuum pump interface and the second vacuum pump interface are respectively connected with a vacuum input end and a vacuum output end. Specifically, the vacuum gas circuit system 5 adopts a molecular pump and a direct-connection linear pump system, and the main valve adopts a gate valve, so that the partition is more reliable, and the gas leakage rate is smaller. The vacuum gas circuit system 5 adopts a mass flow controller and an electric diaphragm valve, thereby ensuring accurate and stable gas supply and reliable partition.

A method for scanning an ion beam sputter coating device, comprising the steps of:

s1: the method comprises the steps of performing preliminary scanning on the surface of a substrate, performing high-precision scanning on the surface of the substrate by using a laser scanner, calculating surface characteristics by measuring a light beam reflection time difference, and setting the distance to d, namely d=c.t/2, wherein c is the light speed and t is the light beam round trip time;

s2: data analysis and processing, converting scanning data into a surface model by utilizing digital image processing and a 3D reconstruction algorithm, identifying pits and defects, analyzing the obtained surface scanning data, performing mathematical description on the surface shape by using an algorithm Zernike polynomial fitting, and finding out irregular parts;

s3: planning an additive coating scheme, namely using computer-aided software according to the scanning result of the step S2, and formulating a coating path and a material deposition amount according to the scanning data;

s4: dynamic ion beam adjustment, according to the design scheme of the step S3, adjusting the power, angle or residence time of the ion beam to carry out accurate coating, and a feedback control system adjusts parameters according to real-time data to control the deposition rate and accuracy, wherein the deposition quantity Q is calculated by Q=I.t.A.eta, wherein I is the ion current intensity, t is the residence time, A is the coverage area, eta is the deposition efficiency;

s5: real-time monitoring and feedback adjustment, in the coating process, a surface monitoring system is continuously used for monitoring, real-time monitoring provides instant data, the deposition process is ensured to meet the preset requirement, and the synchronous measurement and feedback adjustment algorithm adjusts parameters based on deviation delta d, delta d=d _desired -d _measured Where Δd is a critical feedback parameter representing the difference between the actual deposition thickness and the desired thickness, d _desired D, for the desired film thickness _measured The thickness of the coating film is actually measured;

s6: after finishing the coating, carrying out final full scanning to verify the surface quality and shape accuracy;

s7: and recording and processing data, recording all process data for subsequent analysis and quality assurance, and monitoring and optimizing the whole film coating process by database management and statistical analysis.

On the basis of the first embodiment, the embodiment provides a specific working principle of a scanning ion beam sputtering coating device and a scanning ion beam sputtering coating method.

The specific implementation principle flow is as follows:

the preparation stage:

the loading and unloading chamber 6 is opened, and the substrate is mounted on the substrate table 2, so that the substrate is ensured to be fixed stably, and the substrate is prevented from moving in the vacuumizing or coating process. Closing the loading and unloading chamber 6, starting the vacuum gas path system 5, pumping the film coating chamber 1 to a preset vacuum degree, and ensuring that the whole system reaches a required low-pressure environment so as to prevent gas impurities from affecting the film coating quality. The substrate table 2 is slowly moved to the coating chamber 1 by the on-off control of the isolating valve 8, so that the substrate table 2 is ensured to stably move along the connecting groove, and mechanical damage to the substrate is prevented.

And (3) film coating pretreatment:

the temperature and the pressure of the coating chamber 1 are regulated, the stability in the coating process is ensured, and the environmental state is monitored through the temperature and the pressure sensors arranged in the coating chamber 1. The cleaning ion source is used for removing pollutants and oxide layers on the surface of the substrate, so that the cleanliness of the surface of the substrate is ensured, and a good foundation is provided for coating. And starting the sputtering ion source 3, preheating and stabilizing the sputtering target material, ensuring the surface of the target material to be clean, and eliminating possible water vapor and impurities.

And (3) a coating process:

a laser scanner is used for scanning the surface of the substrate in detail, and accurate data of the surface of the substrate are collected, so that a basis is provided for planning a coating scheme; analyzing the data obtained by scanning to determine the irregularity or defect position of the surface of the substrate; according to the data analysis result, a coating scheme is designed, including the region, thickness and material type of the coating; according to the coating scheme, adjusting parameters of the ion beam, such as power, angle and residence time; then starting to coat the substrate, wherein the coating can be performed in multiple layers, and each layer of coating can comprise different materials and thicknesses; in the coating process, the surface state of the substrate is monitored in real time, and dynamic adjustment is carried out according to the requirement, so that each layer of coating is ensured to be uniform and meet the design specification. After the film plating is completed, the surface of the substrate is scanned in detail again, the film plating quality is checked, and the film plating is ensured to meet the preset quality standard. And simultaneously recording key data of the whole coating process, including temperature, pressure, coating parameters and the like. The substrate table 2 is moved back to the loading and unloading chamber 6, the block valve 8 is closed, normal pressure is restored, the loading and unloading chamber 6 is opened, and the substrate is taken down.

Example two

On the basis of the first embodiment, the beneficial effects of the correction plate are further clarified through a uniformity correction experiment of the process correction mechanism:

1. experiment design:

a correction plate 12 is added near the substrate to deposit excess target particles on the correction plate 12, but not on the substrate, thereby improving the film thickness uniformity of the substrate. The correction plate 12 is in an elliptical regular shape, and the substrate is made of stainless steel strips with smooth surfaces. When the film thickness is tested, the center line of the stainless steel strip in the length direction is taken, one point is measured every 10mm, 10 points are measured in total, and the thickness of the film at each point is measured by an infrared thickness meter.

2. Experimental results: (see Table of experimental results)

Experimental results Table

3. Analysis of experimental results:

from the experimental results, it is found that the uniformity of the film thickness in the radial direction of the substrate stage 2 is poor without the correction plate 12. The film thickness is greatest at the center position, gradually decreases in the radial direction, and decreases in magnitude with larger radius. The correction plate 12 is added, and after the shape of the correction plate 12 is trimmed twice, the uniformity is obviously improved.

During the film plating process, the shape of the correction plate 12 needs to be adjusted according to the thickness distribution of the film. The width of the correction plate 12 needs to be increased at the position where the film is thicker; where the film is thinner, the width of the correction plate 12 is reduced, and how much widening or narrowing depends on the film non-uniformity. Such as: if the film thickness at a point becomes 2% thicker, the width of the correction plate 12 needs to be increased, so that the path of the point blocked by the correction plate 12 becomes longer, and the ratio of the total path is increased by 2%, thus the uniformity of the film can be improved through repeated correction for a plurality of times.

There are, of course, many other embodiments of the invention that can be made by those skilled in the art in light of the above teachings without departing from the spirit or essential scope thereof, but that such modifications and variations are to be considered within the scope of the appended claims.

Claims (8)

1. The utility model provides a scanning ion beam sputtering coating device, includes coating film cavity (1), substrate stage (2), sputter ion source (3), sputter target platform (4) and vacuum gas circuit system (5), substrate stage (2), sputter ion source (3) and sputter target platform (4) all set up in coating film cavity (1), sputter ion source (3) are towards sputter target platform (4), sputter target platform (4) are towards substrate stage (2), vacuum gas circuit system (5) are put through with coating film cavity (1), its characterized in that: the device is characterized by further comprising a loading and unloading sheet chamber (6) and an adjusting mechanism (7), wherein the loading and unloading sheet chamber (6) is communicated with the film coating chamber (1), a connecting groove for the substrate table (2) to move in a shuttling mode is formed between the loading and unloading sheet chamber (6) and the film coating chamber (1), a blocking valve (8) for controlling on-off is further arranged between the loading and unloading sheet chamber (6) and the film coating chamber (1), the adjusting mechanism (7) is rotatably arranged in the film coating chamber (1) and is oppositely arranged with the substrate table (2), the adjusting mechanism (7) comprises an auxiliary ion source and a cleaning ion source, and a process correction mechanism (9) for improving uniformity of film thickness of the substrate is further arranged on the substrate table (2).

2. The scanning ion beam sputter coating apparatus of claim 1, wherein: the sputtering ion source (3) and the sputtering target table (4) are rotatably arranged in the coating chamber (1), and the sputtering ion source (3) and the sputtering target table (4) are respectively connected with a control system for controlling the sputtering ion source to rotate.

3. The scanning ion beam sputter coating apparatus of claim 2, wherein: the control system is also respectively connected with a block valve (8), a substrate table (2), a vacuum gas circuit system (5), an adjusting mechanism (7) and a process correction mechanism (9), and comprises a driving motor and a PLC (programmable logic controller) which are arranged in the coating chamber (1).

4. The scanning ion beam sputter coating apparatus of claim 1, wherein: the process correction mechanism (9) comprises a first rotating rod (10), a second rotating rod (11) and a correction plate (12), one end of the first rotating rod (10) is fixedly connected to the substrate table (2), the other end of the first rotating rod (10) is rotationally connected with the second rotating rod (11), the other end of the second rotating rod (11) is rotationally connected with the correction plate (12), and the correction plate (12) is located between the substrate table (2) and the sputtering target table (4).

5. The apparatus of claim 4, wherein: the correction plate (12) comprises a fixed rod (13) and a plurality of correction components, wherein any correction component comprises a rotating shaft (14) and a correction sheet (15), the rotating shafts (14) are arranged at equal intervals and symmetrically arranged on two sides of the fixed rod (13), one ends of the correction sheets (15) are connected with the rotating shaft (14) in a step structure, the lengths of the correction sheets (15) are gradually decreased from the middle part of the fixed rod (13) to two ends of the fixed rod, and a driving mechanism for driving the rotating shafts (14) to rotate is arranged on the fixed rod (13).

6. The scanning ion beam sputter coating apparatus of claim 1, wherein: the adjusting mechanism (7) comprises an adjusting and controlling part and a rotating part, and the auxiliary ion source and the cleaning ion source are respectively arranged at two ends of the rotating part.

7. The scanning ion beam sputter coating apparatus of claim 1, wherein: the vacuum gas circuit system (5) comprises a first vacuum pump interface and a second vacuum pump interface, the first vacuum pump interface and the second vacuum pump interface are respectively communicated with the coating cavity (1), and the first vacuum pump interface and the second vacuum pump interface are respectively connected with a vacuum input end and a vacuum output end.

8. A method for scanning an ion beam sputter coating device, comprising the steps of:

s1: the method comprises the steps of performing preliminary scanning on the surface of a substrate, performing high-precision scanning on the surface of the substrate by using a laser scanner, calculating surface characteristics by measuring a light beam reflection time difference, and setting the distance to d, namely d=c.t/2, wherein c is the light speed and t is the light beam round trip time;

s2: data analysis and processing, converting scanning data into a surface model by utilizing digital image processing and a 3D reconstruction algorithm, identifying pits and defects, analyzing the obtained surface scanning data, performing mathematical description on the surface shape by using an algorithm Zernike polynomial fitting, and finding out irregular parts;

s3: planning an additive coating scheme, namely using computer-aided software according to the scanning result of the step S2, and formulating a coating path and a material deposition amount according to the scanning data;

s4: dynamic ion beam adjustment, according to the design scheme of the step S3, adjusting the power, angle or residence time of the ion beam to carry out accurate coating, and a feedback control system adjusts parameters according to real-time data to control the deposition rate and accuracy, wherein the deposition quantity Q is calculated by Q=I.t.A.eta, wherein I is the ion current intensity, t is the residence time, A is the coverage area, eta is the deposition efficiency;

s5: real-time monitoring and feedback adjustment, in the coating process, a surface monitoring system is continuously used for monitoring, real-time monitoring provides instant data, the deposition process is ensured to meet the preset requirement, and the synchronous measurement and feedback adjustment algorithm adjusts parameters based on deviation delta d, delta d=d _desired -d _measured Where Δd is a critical feedback parameter representing the difference between the actual deposition thickness and the desired thickness, d _desired D, for the desired film thickness _measured The thickness of the coating film is actually measured;

s6: after finishing the coating, carrying out final full scanning to verify the surface quality and shape accuracy;

s7: and recording and processing data, recording all process data for subsequent analysis and quality assurance, and monitoring and optimizing the whole film coating process by database management and statistical analysis.