CN117612963B - Device and method for detecting defects of semiconductor chip - Google Patents

Device and method for detecting defects of semiconductor chip Download PDF

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Publication number
CN117612963B
CN117612963B CN202410088341.2A CN202410088341A CN117612963B CN 117612963 B CN117612963 B CN 117612963B CN 202410088341 A CN202410088341 A CN 202410088341A CN 117612963 B CN117612963 B CN 117612963B
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fixedly connected
plate
piece
collecting box
wall
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CN117612963A (en
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余毅
孙守红
郭同健
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Changchun Institute of Optics Fine Mechanics and Physics of CAS
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Changchun Institute of Optics Fine Mechanics and Physics of CAS
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B07—SEPARATING SOLIDS FROM SOLIDS; SORTING
    • B07C—POSTAL SORTING; SORTING INDIVIDUAL ARTICLES, OR BULK MATERIAL FIT TO BE SORTED PIECE-MEAL, e.g. BY PICKING
    • B07C5/00—Sorting according to a characteristic or feature of the articles or material being sorted, e.g. by control effected by devices which detect or measure such characteristic or feature; Sorting by manually actuated devices, e.g. switches
    • B07C5/34—Sorting according to other particular properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B07—SEPARATING SOLIDS FROM SOLIDS; SORTING
    • B07C—POSTAL SORTING; SORTING INDIVIDUAL ARTICLES, OR BULK MATERIAL FIT TO BE SORTED PIECE-MEAL, e.g. BY PICKING
    • B07C5/00—Sorting according to a characteristic or feature of the articles or material being sorted, e.g. by control effected by devices which detect or measure such characteristic or feature; Sorting by manually actuated devices, e.g. switches
    • B07C5/36—Sorting apparatus characterised by the means used for distribution
    • B07C5/38—Collecting or arranging articles in groups
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N25/00—Investigating or analyzing materials by the use of thermal means
    • G01N25/72—Investigating presence of flaws
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/286—External aspects, e.g. related to chambers, contacting devices or handlers
    • G01R31/2862—Chambers or ovens; Tanks
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/2872—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation
    • G01R31/2874—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to temperature
    • G01R31/2875—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to temperature related to heating
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2893—Handling, conveying or loading, e.g. belts, boats, vacuum fingers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67271—Sorting devices

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Environmental & Geological Engineering (AREA)
  • Power Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

The invention relates to the technical field of semiconductor production, in particular to a device and a method for detecting defects of a semiconductor chip. The invention ensures that the net body reciprocates up and down so as to lead the semiconductor chip to be thrown up in a reciprocating way, thereby solving the uneven heating phenomenon of the traditional high-temperature detection, preventing the occurrence of heating dead angles, improving the detection quality and the detection accuracy, automatically leading the semiconductor chip with qualified quality to fall into the second collecting box and automatically leading the semiconductor chip with unqualified quality to fall into the first collecting box.

Description

Device and method for detecting defects of semiconductor chip
Technical Field
The invention relates to the technical field of semiconductor production, in particular to a device and a method for detecting defects of a semiconductor chip.
Background
Semiconductor chips are semiconductor devices that are manufactured by etching and wiring on a semiconductor sheet and that can realize a certain function. Not only silicon chips, but also semiconductor materials such as gallium arsenide and germanium are common.
The high temperature test of semiconductor chip is an indispensable process step of making the chip become qualified product, and at high temperature, the electrolyte in the capacitor boils, the pressure rises, when the pressure exceeds the pressure born by the aluminum shell of the electrolytic capacitor, the slurry can be exploded, and the existing chip high temperature test device has heating dead angles, such as the contact surface of the chip and the supporting chip component, and can not perform comprehensive heating test on the chip.
Disclosure of Invention
The invention aims to provide a device and a method for detecting defects of a semiconductor chip, and aims to solve the technical problems, the invention is realized by adopting the following technical scheme:
the utility model provides a be used for semiconductor chip defect detection device, includes bottom plate, high temperature box, conveyer, first collecting box and second collecting box, and high temperature box, conveyer, first collecting box and second collecting box all connect in the bottom plate roof, are equipped with on the first collecting box and explode thick liquid detection mechanism and screening mechanism, explode thick liquid detection mechanism and screening mechanism electricity and connect.
Preferably, a high temperature cavity is formed in the high temperature box and is communicated with a high Wen Xiangding wall through a first channel, the high temperature cavity is communicated with a high temperature box side wall through a second channel, a first groove is formed in the high temperature cavity side wall, a motor is inlaid in the first groove side wall, one end of an output shaft on the motor extends into the high temperature cavity, a fan blade and a first straight gear are fixedly connected to the output shaft, the fan blade is positioned in the first groove, the first straight gear is positioned in the high temperature cavity, an electric heating wire is fixedly connected to the bottom wall of the first groove, a second straight gear is rotatably connected to the side wall of the high temperature cavity, the second straight gear is meshed with the first straight gear, the diameter of the second straight gear is larger than that of the first straight gear, an extension strip is fixedly connected to the side wall of the second straight gear, a partition plate is connected with the side wall of the high temperature cavity through a first elastic piece, a first wedge block is fixedly connected to the bottom wall of the partition plate, a guide plate is fixedly connected to the back wall of the high temperature cavity, a sliding strip is fixedly connected to the side wall of the guide plate, a second wedge block is fixedly connected to the upper end of the sliding strip, a first supporting strip is fixedly connected to the lower end of the sliding strip, a first supporting strip is fixedly connected to the upper supporting strip, the first upper supporting strip is fixedly connected to a supporting strip is in a shape, the top supporting strip is in a flat shape and a position limiting plate is fixedly connected to the top wall, and a limiting plate is fixedly connected to the first supporting strip;
the high-temperature cavity back wall is connected with a first polishing plate in a sliding manner, the first polishing plate is connected with a second polishing plate in a rotating manner through a limiting rotating shaft, a net body is arranged on the second polishing plate, the bottom wall of the first polishing plate is connected with a first permanent magnet in a sliding manner, a second supporting bar is fixedly connected to the first permanent magnet, the second supporting bar is propped against the bottom wall of the second polishing plate, the bottom wall of the first polishing plate is fixedly connected with a connecting ring and a first electromagnet device, the first permanent magnet is connected with the connecting ring through a second elastic piece, the side wall of the first polishing plate is fixedly connected with a stress bar, the back wall of the high-temperature cavity is fixedly connected with a second limiting piece, and the second limiting piece is propped against the first polishing plate;
the second groove is formed in the bottom wall of the high-temperature cavity, the side wall of the high-temperature cavity is connected with the baffle in a sliding mode, the side wall of the baffle is fixedly connected with the stress piece, and the bottom wall of the baffle is connected with the bottom wall of the second groove through the third elastic piece.
Preferably, the top wall of the high-temperature cavity is fixedly connected with a third limiting piece.
Preferably, the bottom wall of the second channel is inclined.
Preferably, the rear wall of the high-temperature cavity is fixedly connected with a sliding rail, and the first polishing plate is connected to the sliding rail in a sliding way.
Preferably, the conveyor is provided with a conveying belt, and more than two protruding sheets are fixedly connected on the conveying belt;
the first collecting box is provided with a collecting cavity, the collecting cavity is communicated with the side wall of the first collecting box through a third channel, the screening mechanism comprises a rotating rod, a first rotating plate, a second rotating plate, a fourth elastic piece and a second electromagnet device, the rotating rod is rotationally connected to the top wall of the first collecting box, the first rotating plate and the second rotating plate are fixedly connected to the rotating rod, the first rotating plate is connected with the top wall of the first collecting box through the fourth elastic piece, the second electromagnet device is fixedly connected to the top wall of the first collecting box, and the first rotating plate is embedded with a second permanent magnet;
the slurry explosion detection mechanism comprises a transmission plate, a bent tooth piece, a fifth elastic piece, a third straight gear, a rack, an extension piece, a connecting column and a detector;
the transmission plate is rotationally connected to the rear wall of the third channel, the transmission plate is connected with the bottom wall of the third channel through a fifth elastic piece, the bent tooth piece is fixedly connected to the side wall of the transmission plate, the third spur gear is rotationally connected to the rear wall of the third channel, the rack is slidingly connected to the rear wall of the third channel, the extension piece is fixedly connected to the side wall of the rack, the extension piece extends to the outside of the first collecting box, the bent tooth piece and the rack are respectively meshed with the third spur gear, the detector is connected with the side wall of the first collecting box through a connecting column, a third groove is formed in the bottom wall of the detector, an elastic buffer layer is fixedly connected to the side wall of the third groove, the conducting strip is slidingly connected to the rear wall of the third groove, the lower end of the conducting strip extends to the lower portion of the detector, balls are in rolling connection with the lower end of the conducting strip, the conducting strip is abutted against the elastic buffer layer, the front wall of the conducting strip is fixedly connected with a first connecting strip, the bottom wall of the first connecting strip is fixedly connected with a second connecting strip, the side wall of the second connecting strip is fixedly connected with a protruding piece, the top wall of the third groove is fixedly connected with a first conducting spring and a second conducting spring, a storage battery is arranged in the detector, the first conducting spring, the second electromagnet device, the storage battery and the second electromagnet device and the storage battery are sequentially electrically connected in the detector.
Preferably, the drive plate is rotatably connected to the rear wall of the third passageway by a shaft.
Preferably, the fourth elastic member is a torsion spring.
Preferably, the elastic buffer layer is a sponge layer.
A method for semiconductor chip defect detection, comprising the steps of:
the semiconductor chips are placed into a high-temperature box for heating, then the heated semiconductor chips are dropped onto a conveyor for conveying, whether the heated semiconductor chips explode or not is judged through an explosion detection mechanism, the semiconductor chips without explosion are sent into a second collecting box through the cooperation of a screening mechanism and the conveyor, and the semiconductor chips with explosion are sent into a first collecting box.
The invention has the following beneficial effects:
the heat of the heating wire can be transferred to the semiconductor chip through one motor to carry out high-temperature detection, the partition board is moved leftwards to block the first channel to prevent heat loss, the net body is moved up and down in a reciprocating manner to enable the semiconductor chip to be thrown up in a reciprocating manner, so that the problem of uneven heating in the traditional high-temperature detection is solved, heating dead angles are prevented, the detection quality and the detection accuracy are improved, the device is ingenious in design and high in linkage;
the ball on the detector can automatically detect whether the semiconductor chip has the slurry explosion phenomenon, so that whether the high temperature resistance of the semiconductor chip meets the standard or not is judged, whether the quality is qualified or not is judged, and the qualified semiconductor chip falls into the second collecting box through the cooperation of the slurry explosion detection mechanism and the screening mechanism, so that the unqualified semiconductor chip falls into the first collecting box automatically, and the semiconductor chip falls into the first collecting box, so that the slurry explosion detection mechanism and the screening mechanism can be reset by utilizing the gravity of the semiconductor chip, and the influence on the screening work of the following semiconductor chip is avoided.
Drawings
The invention will be further described with reference to the accompanying drawings, in which embodiments do not constitute any limitation of the invention, and other drawings can be obtained by one of ordinary skill in the art without inventive effort from the following drawings.
FIG. 1 is a schematic diagram of a defect detection apparatus for a semiconductor chip according to the present invention;
FIG. 2 is an enlarged view of the invention at A in FIG. 1;
FIG. 3 is an enlarged view of the invention at B in FIG. 1;
FIG. 4 is an enlarged view of the detector of FIG. 3 in accordance with the present invention;
FIG. 5 is a top view of the first collection bin and conveyor belt of FIG. 1 according to the present invention;
FIG. 6 is a top view of the first and second polishing plates of FIG. 1 according to the present invention;
fig. 7 is a schematic circuit configuration of the present invention.
Reference numerals: 1. a bottom plate; 2. a high temperature box; 3. a high temperature chamber; 4. a first channel; 5. a second channel; 6. a first groove; 7. a motor; 8. an output shaft; 9. a fan blade; 10. a first straight gear; 11. heating wires; 12. a second spur gear; 13. an extension strip; 14. a partition plate; 15. a first elastic member; 16. a first wedge block; 17. a pneumatic member; 18. a first support bar; 19. a slide bar; 20. a second wedge block; 21. a first limiting piece; 22. a guide plate; 23. a first polishing plate; 24. a second polishing plate; 241. a net body; 25. a second support bar; 26. a first permanent magnet; 27. a second elastic member; 28. a connecting ring; 29. a first electromagnet device; 30. a force bar; 31. the second limiting piece; 32. a slide rail; 33. a baffle; 34. a stress piece; 35. a third elastic member; 36. a second groove; 37. the third limiting piece; 38. a conveyor; 39. a transmission belt; 40. a tab; 41. a first collection box; 42. a second collection box; 43. a collection chamber; 44. a third channel; 45. a rotating rod; 46. a first rotating plate; 461. a second permanent magnet; 47. a second rotating plate; 48. a fourth elastic member; 49. a second electromagnet device; 50. a drive plate; 51. a shaft body; 52. bending the tooth plate; 53. a fifth elastic member; 54. a third spur gear; 55. a rack; 56. an extension piece; 57. a connecting column; 58. a detector; 59. a third groove; 60. an elastic buffer layer; 61. a conductive strip; 62. a ball; 63. a first connecting bar; 64. a second connecting bar; 65. a protruding piece; 66. a first conductive spring; 67. and a second conductive spring.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be noted that the azimuth or positional relationship indicated by the terms "vertical", "upper", "lower", "horizontal", etc. are based on the azimuth or positional relationship shown in the drawings, and are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the apparatus or element in question must have a specific azimuth, be constructed and operated in a specific azimuth, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," "third," "fourth," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should also be noted that, unless explicitly specified and limited otherwise, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, integrally connected, mechanically connected, electrically connected, directly connected, connected via an intermediary, or connected by communication between two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
As shown in fig. 1 to 7, a defect detecting device for a semiconductor chip includes a base plate 1, a high temperature box 2, a conveyor 38, a first collecting box 41 and a second collecting box 42, wherein the high temperature box 2, the conveyor 38, the first collecting box 41 and the second collecting box 42 are all connected to the top wall of the base plate 1, a slurry explosion detecting mechanism and a screening mechanism are arranged on the first collecting box 41, and the slurry explosion detecting mechanism and the screening mechanism are electrically connected.
According to an alternative embodiment of the invention, a high temperature chamber 3 is arranged in a high temperature chamber 2, the high temperature chamber 3 is communicated with the top wall of the high temperature chamber 2 through a first channel 4, the high temperature chamber 3 is communicated with the side wall of the high temperature chamber 2 through a second channel 5, a first groove 6 is arranged on the side wall of the high temperature chamber 3, a motor 7 is inlaid on the side wall of the first groove 6, one end of an output shaft 8 on the motor 7 extends into the high temperature chamber 3, a fan blade 9 and a first straight gear 10 are fixedly connected on the output shaft 8, the fan blade 9 is positioned in the first groove 6, the first straight gear 10 is positioned in the high temperature chamber 3, an electric heating wire 11 is fixedly connected on the bottom wall of the first groove 6, a second straight gear 12 is rotatably connected on the side wall of the high temperature chamber 3, the second straight gear 12 is meshed with the first straight gear 10, the diameter of the second spur gear 12 is larger than that of the first spur gear 10, an extension bar 13 is fixedly connected to the side wall of the second spur gear 12, a partition 14 is slidably connected to the top wall of the high-temperature cavity 3, the partition 14 is connected with the side wall of the high-temperature cavity 3 through a first elastic piece 15, a first wedge block 16 is fixedly connected to the bottom wall of the partition 14, a guide plate 22 is fixedly connected to the rear wall of the high-temperature cavity 3, a slide bar 19 is slidably connected to the side wall of the guide plate 22, a second wedge block 20 is fixedly connected to the upper end of the slide bar 19, a first support bar 18 is fixedly connected to the lower end of the slide bar 19, a pneumatic piece 17 is fixedly connected to the first support bar 18, the top wall of the pneumatic piece 17 is in a streamline shape, the bottom wall of the pneumatic piece 17 is in a plane shape, a first limiting piece 21 is fixedly connected to the side wall of the guide plate 22, and the first limiting piece 21 and the first support bar 18 are propped against each other;
the rear wall of the high temperature cavity 3 is connected with a first polishing plate 23 in a sliding manner, the first polishing plate 23 is connected with a second polishing plate 24 in a rotating manner through a limiting rotating shaft, the second polishing plate 24 is provided with a net body 241, the bottom wall of the first polishing plate 23 is connected with a first permanent magnet 26 in a sliding manner, the first permanent magnet 26 is fixedly connected with a second supporting bar 25, the second supporting bar 25 abuts against the bottom wall of the second polishing plate 24, the bottom wall of the first polishing plate 23 is fixedly connected with a connecting ring 28 and a first electromagnet device 29, the first permanent magnet 26 is connected with the connecting ring 28 through a second elastic piece 27, the side wall of the first polishing plate 23 is fixedly connected with a stress bar 30, the rear wall of the high temperature cavity 3 is fixedly connected with a second limiting piece 31, and the second limiting piece 31 abuts against the first polishing plate 23;
the second groove 36 is formed in the bottom wall of the high-temperature cavity 3, the side wall of the high-temperature cavity 3 is connected with the baffle plate 33 in a sliding mode, the side wall of the baffle plate 33 is fixedly connected with the stress plate 34, and the bottom wall of the baffle plate 33 is connected with the bottom wall of the second groove 36 through the third elastic piece 35.
In an alternative embodiment of the present invention, the top wall of the high temperature chamber 3 is fixedly connected with a third limiting plate 37.
In an alternative embodiment according to the invention, the bottom wall of the second channel 5 is beveled.
According to an alternative embodiment of the present invention, the rear wall of the high temperature chamber 3 is fixedly connected with a sliding rail 32, and the first polishing plate 23 is slidably connected to the sliding rail 32.
Embodiment one:
the semiconductor chip is put into the net 241 in the high temperature cavity 3 from the first channel 4, the motor 7 and the heating wire 11 are started, the output shaft 8 on the motor 7 drives the fan blade 9 and the first straight gear 10 to rotate, the fan blade 9 rotates to generate wind, the wind drives heat into the high temperature cavity 3 through the heating wire 11 which generates heat, the wind blows through the wind-driven member 17, the top wall of the wind-driven member 17 is in a streamline shape, the bottom wall is planar, the flow velocity of the wind passing through the top wall of the wind-driven member 17 is faster, the flow velocity of the wind passing through the bottom wall of the wind-driven member 17 is slower, the flow velocity is high in pressure intensity, the wind-driven member 17 is subjected to upward thrust under the existence of pressure difference, thereby driving the first support bar 18, the slide bar 19 and the second wedge block 20 to move upwards, the second wedge block 20 drives the first wedge block 16 to move leftwards, thereby driving the partition 14 to move leftwards to be propped against the third limiting piece 37, the first channel 4 is blocked, the heat is prevented from escaping from the outside of the high temperature cavity 3, the first spur gear 10 drives the second spur gear 12 to rotate, because the diameter of the second spur gear 12 is larger than that of the first spur gear 10, the rotating speed of the second spur gear 12 is slower than that of the first spur gear 10, the second spur gear 12 drives the extension bar 13 to rotate, the extension bar 13 can reciprocate to abut against and release from the stress bar 30 when rotating, the extension bar 13 can push the stress bar 30, the first polishing plate 23 and the second polishing plate 24 upwards when abutting against the stress bar 30, the first polishing plate 23 and the second polishing plate 24 can fall downwards under the action of self gravity to abut against the second limiting piece 31 to reset after abutting, so as to form up-down reciprocating movement, thereby reciprocating up the semiconductor chip on the net body 241, enabling heat to uniformly contact each surface of the semiconductor chip, preventing the occurrence of heating dead angle, stopping the operation of the motor 7 after heating for a period, the partition 14 moves rightwards under the action of the elasticity of the first elastic piece 15 to reset, so that the first wedge block 16 pushes the second wedge block 20 and the pneumatic piece 17 to move downwards for resetting, the first electromagnet device 29 is started, the first electromagnet device 29 generates magnetic force to attract the first permanent magnet 26, so that the second supporting bar 25 and the first permanent magnet 26 move rightwards, after the second throwing plate 24 loses the supporting force of the second supporting bar 25, the second throwing plate 24 rotates anticlockwise around the limiting rotating shaft under the action of self gravity, the second throwing plate 24 and the stress piece 34 push the stress piece 34 and the baffle piece 33 downwards after propping against each other, the semiconductor chip slides into the second channel 5 along the inclined second throwing plate 24, the inclined bottom wall of the second channel 5 enables the semiconductor chip to slide onto the conveyor 38 for next step detection of slurry explosion, the first electromagnet device 29 is closed, the second supporting bar 25 and the first permanent magnet 26 move leftwards for resetting under the action of the elasticity of the second elastic piece 27, and the second throwing plate 24 is pushed to restore to a horizontal state.
The pneumatic element 17 can be made of foam or hollow plastic, and has lighter weight and easy upward movement.
According to the embodiment, heat of the heating wire 11 can be transferred to the semiconductor chip through the motor 7 to carry out high-temperature detection, the partition plate 14 is moved leftwards to block the first channel 4 to prevent heat dissipation, the net body 241 is moved up and down in a reciprocating mode to enable the semiconductor chip to be thrown up in a reciprocating mode, therefore the problem of uneven heating in the traditional high-temperature detection is solved, heating dead angles are prevented, detection quality and detection accuracy are improved, and the device is ingenious in design and high in linkage.
In an alternative embodiment of the present invention, the conveyor 38 is provided with a conveyor belt 39, and more than two lugs 40 are fixedly connected to the conveyor belt 39;
the first collecting box 41 is provided with a collecting cavity 43, the collecting cavity 43 is communicated with the side wall of the first collecting box 41 through a third channel 44, the screening mechanism comprises a rotating rod 45, a first rotating plate 46, a second rotating plate 47, a fourth elastic piece 48 and a second electromagnet device 49, the rotating rod 45 is rotationally connected to the top wall of the first collecting box 41, the first rotating plate 46 and the second rotating plate 47 are fixedly connected to the rotating rod 45, the first rotating plate 46 is connected with the top wall of the first collecting box 41 through the fourth elastic piece 48, the second electromagnet device 49 is fixedly connected to the top wall of the first collecting box 41, and the first rotating plate 46 is embedded with a second permanent magnet 461;
the slurry explosion detection mechanism comprises a transmission plate 50, a bending tooth piece 52, a fifth elastic piece 53, a third straight gear 54, a rack 55, an extension piece 56, a connecting column 57 and a detector 58, wherein the transmission plate 50 is rotationally connected with the rear wall of the third channel 44, the transmission plate 50 is connected with the bottom wall of the third channel 44 through the fifth elastic piece 53, the bending tooth piece 52 is fixedly connected with the side wall of the transmission plate 50, the third straight gear 54 is rotationally connected with the rear wall of the third channel 44, the rack 55 is slidingly connected with the rear wall of the third channel 44, the extension piece 56 is fixedly connected with the side wall of the rack 55, the extension piece 56 extends to the outside of the first collecting box 41, the bending tooth piece 52 and the rack 55 are respectively meshed with the third straight gear 54, the detector 58 is connected with the side wall of the first collecting box 41 through the connecting column 57, the detector 58 diapire has seted up third recess 59, third recess 59 lateral wall rigid coupling has elastic buffer layer 60, conducting strip 61 sliding connection is in third recess 59 back wall, the conducting strip 61 lower extreme extends to the detector 58 below, conducting strip 61 lower extreme roll connection has ball 62, conducting strip 61 offsets with elastic buffer layer 60, the conducting strip 61 front wall rigid coupling has first connecting strip 63, first connecting strip 63 diapire rigid coupling has second connecting strip 64, second connecting strip 64 lateral wall rigid coupling has protruding piece 65, third recess 59 roof rigid coupling has first conducting spring 66 and second conducting spring 67, be equipped with the battery in the detector 58, first conducting spring 66, second electromagnet device 49, battery and second conducting spring 67 carry out the electricity in proper order and connect.
In an alternative embodiment according to the invention, the drive plate 50 is rotatably connected to the rear wall of the third channel 44 by means of a shaft 51.
In an alternative embodiment according to the present invention, the fourth elastic member 48 is a torsion spring.
In an alternative embodiment according to the present invention, the elastic buffer 60 is a sponge layer. The sponge layer and the conductive strip 61 are abutted so that the conductive strip 61 can maintain the current height under the action of no external force.
Embodiment two:
the semiconductor chips are heated from the high temperature box 2 and then fall onto the lug 40 of the conveyor 38, and when the semiconductor chips are good in quality and have no slurry explosion phenomenon, the semiconductor chips with qualified quality are qualified, and the semiconductor chips with qualified quality pass under the balls 62 along with the conveyor 39 and do not abut against the balls 62, and then fall into the second collecting box 42 at the left side of the conveyor 38 for collection.
When the semiconductor chip is poor in quality and has the phenomenon of slurry explosion, the quality is unqualified, the defect exists, when the semiconductor chip with unqualified quality passes under the ball 62 along with the conveyor belt 39, the height of the semiconductor chip is increased due to slurry explosion, the semiconductor chip can be propped against the ball 62, so that the ball 62 is jacked up, the conductive strip 61 moves upwards to be propped against the first conductive spring 66 and the second conductive spring 67, a circuit is connected, the storage battery supplies power for the second electromagnet device 49, the second electromagnet device 49 generates magnetic force to generate magnetic repulsive force for the second permanent magnet 461, the first rotating plate 46 drives the rotating rod 45 and the second rotating plate 47 to overcome the elastic force of the fourth elastic piece 48 to rotate backwards, the semiconductor chip is blocked by the second rotating plate 47 and then falls into the collecting cavity 43 along the second rotating plate 47, when the semiconductor chip falls, the driving plate 50 is pushed to rotate anticlockwise around the shaft body 51 against the elasticity of the fifth elastic piece 53, the driving plate 50 drives the bending tooth piece 52 to rotate, the bending tooth piece 52 drives the third straight gear 54 to rotate, the third straight gear 54 drives the rack 55 and the extending piece 56 to move downwards, the extending piece 56 presses down the protruding piece 65 to enable the conductive strip 61 to move downwards, the conductive strip 61 is released from being offset with the first conductive spring 66 and the second conductive spring 67, the circuit is broken, the second electromagnet device 49 loses magnetic repulsion force, the first rotating plate 46, the rotating rod 45 and the second rotating plate 47 are reset under the elasticity of the fourth elastic piece 48, blocking of the semiconductor chip detected later is prevented, and after the semiconductor chip is separated from the driving plate 50, the driving plate 50 is reset under the elasticity of the fifth elastic piece 53.
The tab 40 can assist in pushing the popped semiconductor chip under the ball 62.
In this embodiment, whether the high temperature resistance of the semiconductor chip meets the standard and whether the quality is qualified can be determined by automatically detecting whether the semiconductor chip has a slurry explosion phenomenon through the balls 62 on the detector 58, and the qualified semiconductor chip is automatically dropped into the second collecting box 42 through the cooperation of the slurry explosion detection mechanism and the screening mechanism, so that the unqualified semiconductor chip is automatically dropped into the first collecting box 41, and the slurry explosion detection mechanism and the screening mechanism can be reset by utilizing the gravity of the semiconductor chip in the first collecting box 41, thereby avoiding influencing the screening work of the following semiconductor chip.
A method for semiconductor chip defect detection, comprising the steps of:
the semiconductor chips are placed in the high-temperature box 2 for heating, the heated semiconductor chips are then dropped onto the conveyor 38 for conveying, whether the heated semiconductor chips explode or not is judged by the explosion detection mechanism, the semiconductor chips without explosion are sent into the second collecting box 42 by the cooperation of the screening mechanism and the conveyor 38, and the semiconductor chips with explosion are sent into the first collecting box 41.
The components, modules, mechanisms and devices of the invention, which do not describe the structure in detail, are all common standard components or components known to those skilled in the art, and the structure and principle thereof are all known to those skilled in the art through technical manuals or through routine experimental methods.
Finally, it should be noted that the above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the scope of the present invention, and although the present invention has been described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions can be made to the technical solution of the present invention without departing from the spirit and scope of the technical solution of the present invention.

Claims (9)

1. The defect detection device for the semiconductor chip is characterized by comprising a bottom plate (1), a high-temperature box (2), a conveyor (38), a first collecting box (41) and a second collecting box (42), wherein the high-temperature box (2), the conveyor (38), the first collecting box (41) and the second collecting box (42) are all connected to the top wall of the bottom plate (1), a pulp explosion detection mechanism and a screening mechanism are arranged on the first collecting box (41), and the pulp explosion detection mechanism and the screening mechanism are electrically connected;
a high temperature chamber (3) is arranged in the high temperature chamber (2), the high temperature chamber (3) is communicated with the top wall of the high temperature chamber (2) through a first channel (4), the high temperature chamber (3) is communicated with the side wall of the high temperature chamber (2) through a second channel (5), a first groove (6) is arranged on the side wall of the high temperature chamber (3), a motor (7) is inlaid on the side wall of the first groove (6), one end of an output shaft (8) on the motor (7) extends into the high temperature chamber (3), a fan blade (9) and a first straight gear (10) are fixedly connected on the output shaft (8), the fan blade (9) is positioned in the first groove (6), the first straight gear (10) is positioned in the high temperature chamber (3), an electric heating wire (11) is fixedly connected on the bottom wall of the first groove (6), a second straight gear (12) is rotationally connected on the side wall of the high temperature chamber (3), the second straight gear (12) is meshed with the first straight gear (10), the diameter of the second straight gear (12) is larger than that of the first straight gear (10), a wedge-shaped partition plate (14) is fixedly connected on the side wall (13), a wedge-shaped partition plate (14) is fixedly connected on the side wall (14) of the high temperature chamber (14) through a wedge-shaped partition plate (14), the rear wall of the high-temperature cavity (3) is fixedly connected with a guide plate (22), the side wall of the guide plate (22) is connected with a slide bar (19) in a sliding manner, the upper end of the slide bar (19) is fixedly connected with a second wedge block (20), the lower end of the slide bar (19) is fixedly connected with a first support bar (18), a pneumatic piece (17) is fixedly connected to the first support bar (18), the top wall of the pneumatic piece (17) is in a streamline shape, the bottom wall of the pneumatic piece (17) is in a plane shape, the side wall of the guide plate (22) is fixedly connected with a first limit piece (21), and the first limit piece (21) is propped against the first support bar (18);
the rear wall of the high-temperature cavity (3) is slidably connected with a first polishing plate (23), the first polishing plate (23) is rotatably connected with a second polishing plate (24) through a limiting rotating shaft, a net body (241) is arranged on the second polishing plate (24), the bottom wall of the first polishing plate (23) is slidably connected with a first permanent magnet (26), a second supporting bar (25) is fixedly connected to the first permanent magnet (26), the bottom wall of the second supporting bar (25) is abutted against the bottom wall of the second polishing plate (24), a connecting ring (28) and a first electromagnet device (29) are fixedly connected to the bottom wall of the first polishing plate (23), a stress bar (30) is fixedly connected to the side wall of the first polishing plate (23), and a second limiting piece (31) is fixedly connected to the rear wall of the high-temperature cavity (3), and the second limiting piece (31) is abutted against the first polishing plate (23);
the second groove (36) has been seted up to high temperature chamber (3) diapire, and high temperature chamber (3) lateral wall sliding connection has separation blade (33), and separation blade (33) lateral wall rigid coupling has atress piece (34), and separation blade (33) diapire is connected through third elastic component (35) and second groove (36) diapire.
2. The device for detecting the defects of the semiconductor chips according to claim 1, wherein a third limiting piece (37) is fixedly connected to the top wall of the high-temperature cavity (3).
3. A device for semiconductor chip defect detection according to claim 1 or 2, characterized in that the bottom wall of the second channel (5) is beveled.
4. A device for detecting defects of a semiconductor chip according to claim 3, wherein the rear wall of the high temperature chamber (3) is fixedly connected with a slide rail (32), and the first polishing plate (23) is slidably connected to the slide rail (32).
5. The device for detecting defects of semiconductor chips according to claim 1, wherein the conveyor (38) is provided with a conveyor belt (39), and more than two protruding pieces (40) are fixedly connected to the conveyor belt (39);
the first collecting box (41) is provided with a collecting cavity (43), the collecting cavity (43) is communicated with the side wall of the first collecting box (41) through a third channel (44), the screening mechanism comprises a rotating rod (45), a first rotating plate (46), a second rotating plate (47), a fourth elastic piece (48) and a second electromagnet device (49), the rotating rod (45) is rotationally connected to the top wall of the first collecting box (41), the first rotating plate (46) and the second rotating plate (47) are fixedly connected to the rotating rod (45), the first rotating plate (46) is connected with the top wall of the first collecting box (41) through the fourth elastic piece (48), the second electromagnet device (49) is fixedly connected to the top wall of the first collecting box (41), and a second permanent magnet (461) is inlaid on the first rotating plate (46);
the slurry explosion detection mechanism comprises a transmission plate (50), a bending tooth piece (52), a fifth elastic piece (53), a third straight gear (54), a rack (55), an extension piece (56), a connecting column (57) and a detector (58), wherein the transmission plate (50) is rotationally connected with the rear wall of the third channel (44), the transmission plate (50) is connected with the bottom wall of the third channel (44) through the fifth elastic piece (53), the bending tooth piece (52) is fixedly connected with the side wall of the transmission plate (50), the third straight gear (54) is rotationally connected with the rear wall of the third channel (44), the rack (55) is slidingly connected with the rear wall of the third channel (44), the extension piece (56) is fixedly connected with the side wall of the rack (55), the extension piece (56) extends to the outside of the first collecting box (41), the bending tooth piece (52) and the rack (55) are respectively meshed with the third straight gear (54), the detector (58) is connected with the side wall of the first collecting box (41) through the connecting column (57), a third groove (59) is formed in the bottom wall of the detector (58), the third groove (59) is fixedly connected with the lower end of the third conductive layer (61) at the lower end of the third conductive layer (59) to the lower end (61), the utility model provides a low extreme roll connection of conducting strip (61) has ball (62), conducting strip (61) offsets with elastic buffer layer (60), conducting strip (61) antetheca rigid coupling has first connecting strip (63), first connecting strip (63) diapire rigid coupling has second connecting strip (64), second connecting strip (64) lateral wall rigid coupling has protruding piece (65), third recess (59) roof rigid coupling has first conductive spring (66) and second conductive spring (67), be equipped with the battery in detector (58), first conductive spring (66), second electro-magnet device (49), battery and second conductive spring (67) carry out the electricity in proper order and connect.
6. The defect inspection apparatus for semiconductor chips as defined in claim 5, wherein the driving plate (50) is rotatably connected to the rear wall of the third passage (44) through the shaft body (51).
7. A defect detecting device for semiconductor chips according to claim 5 or 6, characterized in that the fourth elastic member (48) is a torsion spring.
8. The defect detecting device for semiconductor chips according to claim 7, wherein the elastic buffer layer (60) is a sponge layer.
9. A defect detection method for a semiconductor chip, characterized in that the semiconductor chip defect detection apparatus according to any one of claims 1 to 8 is used, comprising the steps of:
the semiconductor chips are placed into a high-temperature box (2) for heating, then the heated semiconductor chips are dropped onto a conveyor (38) for conveying, whether the heated semiconductor chips explode or not is judged through an explosion detection mechanism, the semiconductor chips without explosion are sent into a second collecting box (42) through the cooperation of a screening mechanism and the conveyor (38), and the semiconductor chips with explosion are sent into a first collecting box (41).
CN202410088341.2A 2024-01-22 2024-01-22 Device and method for detecting defects of semiconductor chip Active CN117612963B (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100011595A (en) * 2008-07-25 2010-02-03 (주)테크윙 Sorting method of tested semiconductor device and supporting method for testing semicondutor device
CN103579054A (en) * 2012-08-09 2014-02-12 大日本网屏制造株式会社 Substrate processing apparatus and substrate processing method
JP2020183907A (en) * 2019-05-08 2020-11-12 アスリートＦａ株式会社 Electronic component inspection device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100011595A (en) * 2008-07-25 2010-02-03 (주)테크윙 Sorting method of tested semiconductor device and supporting method for testing semicondutor device
CN103579054A (en) * 2012-08-09 2014-02-12 大日本网屏制造株式会社 Substrate processing apparatus and substrate processing method
JP2020183907A (en) * 2019-05-08 2020-11-12 アスリートＦａ株式会社 Electronic component inspection device

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