CN117610295A - IGBT transient simulation model construction method, system, equipment and medium - Google Patents
IGBT transient simulation model construction method, system, equipment and medium Download PDFInfo
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Abstract
The invention discloses a method, a system, equipment and a medium for constructing an IGBT transient simulation model, and relates to the technical field of low-frequency power transmission. And respectively adopting structural data of the IGBT to perform double pulse test according to the turn-off driving resistor to generate a plurality of groups of actually measured turn-off voltages and actually measured turn-off currents. And (3) performing linear approximation processing by adopting the actually measured turn-off current, and determining a current falling slope, a trailing current slope and a trailing current tail end slope. And performing model construction based on the current falling slope, the trailing current slope and the trailing current tail end slope, and generating an initial transient turn-off model. And determining a target transient shutdown model based on the simulated shutdown voltage and the actually measured shutdown voltage corresponding to the initial transient shutdown model. And constructing an IGBT turn-off transient simulation model by adopting a target transient turn-off model corresponding to all turn-off driving resistors. Modeling data come from IGBT actual measurement turn-off data, so that the simulation precision is higher, the simulation precision and the modeling difficulty are both considered, and the practical applicability is higher.
Description
Technical Field
The invention relates to the technical field of low-frequency power transmission, in particular to an IGBT transient simulation model construction method, an IGBT transient simulation model construction system, IGBT transient simulation equipment and an IGBT transient simulation medium.
Background
With the high-speed development of new power electronics technology and the proposal of flexible low-frequency transmission technology, high-voltage, large-capacity and long-distance low-frequency transmission has technical feasibility. The converter valve is a core device in the field of low-frequency power transmission and is used for realizing the transformation of power transmission frequency, and the IGBT (Insulated Gate Bipolar Transistor ) is a core device of the converter valve, and the working stability of the converter valve directly influences the working reliability of the converter valve. The IGBT turn-off transient process is an important concern factor of device application, the IGBT turn-off overvoltage breakdown is one of main reasons for failure, and the establishment of an IGBT turn-off transient simulation model is an important method for analyzing the turn-off characteristics of the IGBT.
The IGBT transient simulation model comprises a physical model, a numerical model, a behavior model and the like, wherein the simulation precision of the physical model is high, but physical parameters in the model are difficult to obtain from manufacturers, and the modeling difficulty is high. The numerical model approximates the transient process of the IGBT through the mathematical model, but the simulation precision of the numerical model is difficult to ensure because the turn-off processes of the IGBTs of different models of different manufacturers are different, and the modeling process is complex. The behavior model is a modeling method commonly used by SPICE simulation software, models the transient behavior of the device through a datasheet curve of a device manufacturer, has certain simulation precision, but has the defect of difficult convergence of the simulation model due to the fact that a large number of data curves are used for modeling.
Disclosure of Invention
The invention provides a method, a system, equipment and a medium for constructing an IGBT transient simulation model, which solve the technical problems of low practicality of the constructed simulation model caused by the difficulty in modeling, the universality and the difficulty in compatibility of the simulation precision of the traditional method for constructing the transient simulation model.
The invention provides a method for constructing an IGBT transient simulation model, which comprises the following steps:
acquiring structural data of an IGBT and a plurality of turn-off driving resistors, respectively adopting the structural data to perform double pulse test based on the turn-off driving resistors, and generating a plurality of groups of actually measured turn-off voltages and actually measured turn-off currents corresponding to the turn-off driving resistors;
performing linear approximation processing by adopting the actually measured turn-off current, and determining a current falling slope, a trailing current slope and a trailing current tail end slope;
performing model construction according to the current falling slope, the trailing current slope and the trailing current tail end slope, and generating an initial transient turn-off model corresponding to the turn-off driving resistor;
determining a target transient turn-off model corresponding to the turn-off driving resistor according to the simulated turn-off voltage corresponding to the initial transient turn-off model and the actually measured turn-off voltage;
And constructing an IGBT turn-off transient simulation model corresponding to the IGBT by adopting a target transient turn-off model corresponding to all the turn-off driving resistors.
Optionally, the step of performing linear approximation processing by using the actually measured off current to determine a current falling slope, a trailing current slope and a trailing current end slope includes:
respectively carrying out linear approximate segmentation on the actually measured off currents of each group to generate a phase current data set;
substituting the phase current data set into a preset phase mathematical model to perform current slope calculation, and generating a current falling slope, a trailing current slope and a trailing current tail end slope;
the mathematical model of the preset stage is as follows:
wherein i (t) is a function value corresponding to the current period;is the current falling slope; />Is the trailing current slope;is the trailing current end slope; t is a time period corresponding to the current moment; t is t 1 Is a current invariant time period; t is t 2 Is a current drop period; t is t 3 Is the trailing current period; t is t 4 For a trailing current end time period; i (t) 1 ) The current is a function value of the critical point moment of the constant current time period; i (t) 1 +t 2 ) The function value is the critical point moment of the current falling time period; i (t) 1 +t 2 +t 3 ) Is a function value of the critical point moment of the trailing current time period.
Optionally, the step of performing model construction according to the current falling slope, the tail current slope and the tail current end slope to generate an initial transient turn-off model corresponding to the turn-off driving resistor includes:
calculating the current falling slope, the trailing current slope and the trailing current tail end slope with preset inductance values respectively to generate a power supply voltage value in a falling current stage, a power supply voltage value of the trailing current and a power supply voltage value in a trailing end current stage;
performing model construction by adopting the structural data to generate an IGBT circuit model;
and updating the IGBT circuit model by adopting the power supply voltage value in the current-falling stage, the power supply voltage value in the tail current stage and the power supply voltage value in the tail end current stage, and generating an initial transient turn-off model corresponding to the turn-off driving resistor.
Optionally, the step of determining the target transient shutdown model corresponding to the shutdown driving resistor according to the simulated shutdown voltage corresponding to the initial transient shutdown model and the actually measured shutdown voltage includes:
applying the power supply voltage value of the falling current stage, the power supply voltage value of the tail current stage and the power supply voltage value of the tail end current stage to the inductor in the initial transient turn-off model in different time periods to generate initial simulation current;
In the period of time corresponding to the power supply voltage value in the current falling stage, the power supply voltage value in the tail current stage and the power supply voltage value in the tail end current stage, a tapping switch is adopted to conduct power supply switching, and the initial simulation current is updated to be an intermediate simulation current;
converting the intermediate simulation current into a voltage signal by a current control voltage source;
smoothing the voltage signal by adopting a first-order low-pass filter to generate a simulated turn-off voltage corresponding to the initial transient turn-off model;
and determining a target transient turn-off model corresponding to the turn-off driving resistor according to an error value between the simulated turn-off voltage and the actually measured turn-off voltage.
Optionally, the step of determining the target transient shutdown model corresponding to the shutdown driving resistor according to the error value between the simulated shutdown voltage and the actually measured shutdown voltage includes:
calculating error values of the simulated turn-off voltage and the actually measured turn-off voltage at different stages respectively to generate a plurality of error values;
when the error values are all smaller than a preset error threshold value, taking an initial transient turn-off model corresponding to the simulated turn-off voltage as a target transient turn-off model;
And when the error value is larger than the preset error value, skipping to execute the step of performing linear approximation processing by adopting the actually measured turn-off current to determine a current falling slope, a trailing current slope and a trailing current tail end slope.
Optionally, the step of constructing the IGBT turn-off transient simulation model corresponding to the IGBT using the target transient turn-off model corresponding to all the turn-off driving resistors includes:
adopting all the shutdown current parameters corresponding to the target transient shutdown model to construct a shutdown current parameter database;
binding all target transient turn-off models corresponding to the turn-off driving resistors with the turn-off current parameter database, and generating an IGBT turn-off transient simulation model corresponding to the IGBT.
The invention also provides an IGBT transient simulation model construction system, which comprises:
the device comprises an actually measured turn-off voltage and actually measured turn-off current generating module, a power supply module and a power supply module, wherein the actually measured turn-off voltage and actually measured turn-off current generating module is used for acquiring structural data of an IGBT and a plurality of turn-off driving resistors, and performing double pulse test by adopting the structural data based on the turn-off driving resistors to generate a plurality of groups of actually measured turn-off voltages and actually measured turn-off currents corresponding to the turn-off driving resistors;
The current slope determining module is used for performing linear approximation processing by adopting the actually measured turn-off current to determine a current falling slope, a trailing current slope and a trailing current tail end slope;
the initial transient turn-off model generation module is used for carrying out model construction according to the current falling slope, the tail current slope and the tail current tail end slope to generate an initial transient turn-off model corresponding to the turn-off driving resistor;
the target transient turn-off model determining module is used for determining a target transient turn-off model corresponding to the turn-off driving resistor according to the simulated turn-off voltage corresponding to the initial transient turn-off model and the actually measured turn-off voltage;
and the IGBT turn-off transient simulation model construction module is used for constructing an IGBT turn-off transient simulation model corresponding to the IGBT by adopting all target transient turn-off models corresponding to the turn-off driving resistors.
Optionally, the current slope determining module includes:
the phase current data set generation module is used for respectively carrying out linear approximate segmentation on the actually measured turn-off current of each group to generate a phase current data set;
the current slope determining submodule is used for substituting the phase current data set into a preset phase mathematical model to perform current slope calculation and generate a current falling slope, a trailing current slope and a trailing current tail end slope;
The mathematical model of the preset stage is as follows:
wherein i (t) is a function value corresponding to the current period;is the current falling slope; />Is the trailing current slope;is the trailing current end slope; t is a time period corresponding to the current moment; t is t 1 Is a current invariant time period; t is t 2 Is a current drop period; t is t 3 Is the trailing current period; t is t 4 For a trailing current end time period; i (t) 1 ) The current is a function value of the critical point moment of the constant current time period; i (t) 1 +t 2 ) The function value is the critical point moment of the current falling time period; i (t) 1 +t 2 +t 3 ) Is a function value of the critical point moment of the trailing current time period.
The invention also provides an electronic device, which comprises a memory and a processor, wherein the memory stores a computer program, and the computer program when executed by the processor causes the processor to execute the steps for realizing the method for constructing the IGBT transient simulation model according to any one of the above steps.
The invention also provides a computer readable storage medium, on which a computer program is stored, which when executed implements any one of the above-mentioned IGBT transient simulation model building methods.
From the above technical scheme, the invention has the following advantages:
according to the invention, through acquiring the structural data of the IGBT and a plurality of turn-off driving resistors, and respectively adopting the structural data to perform double pulse test according to the turn-off driving resistors, a plurality of groups of actually measured turn-off voltages and actually measured turn-off currents corresponding to the turn-off driving resistors are generated. And (3) performing linear approximation processing by adopting the actually measured turn-off current, and determining a current falling slope, a trailing current slope and a trailing current tail end slope. And performing model construction based on the current falling slope, the trailing current slope and the trailing current tail end slope, and generating an initial transient turn-off model corresponding to the turn-off driving resistor. And determining a target transient turn-off model corresponding to the turn-off driving resistor based on the simulated turn-off voltage and the actually measured turn-off voltage corresponding to the initial transient turn-off model. And constructing an IGBT turn-off transient simulation model corresponding to the IGBT by adopting a target transient turn-off model corresponding to all turn-off driving resistors. The method solves the technical problems of low practicality of the constructed simulation model caused by the difficulty in modeling, the universality and the difficulty in compatibility of the conventional transient simulation model construction method. And by utilizing the actually measured turn-off current data of the IGBT double pulse test and analyzing the test data, a simple simulation circuit is built to simulate the turn-off process of the IGBT, and the modeling method is simple. The modeling data of the method come from the actually measured turn-off data of the IGBT, so that the method has higher simulation precision, combines the simulation precision and the modeling difficulty, has the advantages of simplicity, low modeling difficulty and high simulation precision, can perform more accurate simulation on the turn-off overvoltage of the IGBT, and has higher practicability.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions of the prior art, the drawings which are used in the description of the embodiments or the prior art will be briefly described, it being obvious that the drawings in the description below are only some embodiments of the invention, and that other drawings can be obtained from these drawings without inventive faculty for a person skilled in the art.
Fig. 1 is a flowchart of steps of an IGBT transient simulation model construction method according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a dual-pulse test main loop according to a first embodiment of the present invention;
fig. 3 is a schematic diagram of an IGBT double pulse actual measurement waveform according to an embodiment of the present invention;
fig. 4 is a schematic diagram of data analysis of actual measurement IGBT turn-off current according to the first embodiment of the invention;
fig. 5 is a schematic diagram of an initial transient turn-off model of an IGBT according to an embodiment of the present invention;
FIG. 6 is a database of shutdown parameters established under different shutdown resistances and shutdown current conditions according to a first embodiment of the present disclosure;
fig. 7 is a schematic diagram of a target transient turn-off model of an IGBT established by general simulation software according to the first embodiment of the present invention;
Fig. 8 is a schematic diagram of simulation results of a target transient turn-off model of an IGBT according to the first embodiment of the present invention;
fig. 9 is a structural block diagram of an IGBT transient simulation model building system according to a second embodiment of the present invention.
Detailed Description
The embodiment of the invention provides an IGBT transient simulation model construction method, an IGBT transient simulation model construction system, IGBT transient simulation model construction equipment and an IGBT transient simulation model construction medium, which are used for solving the technical problems that the modeling difficulty, the universality and the simulation precision of the traditional transient simulation model construction method are difficult to be compatible, and the practical applicability of the constructed simulation model is low.
In order to make the objects, features and advantages of the present invention more comprehensible, the technical solutions in the embodiments of the present invention are described in detail below with reference to the accompanying drawings, and it is apparent that the embodiments described below are only some embodiments of the present invention, but not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 1, fig. 1 is a flowchart illustrating steps of a method for constructing an IGBT transient simulation model according to an embodiment of the invention.
The method for constructing the IGBT transient simulation model provided by the embodiment of the invention comprises the following steps:
and 101, acquiring structural data of the IGBT and a plurality of turn-off driving resistors, respectively adopting the structural data to perform double pulse test according to the turn-off driving resistors, and generating a plurality of groups of actually measured turn-off voltages and actually measured turn-off currents corresponding to the turn-off driving resistors.
In the embodiment of the invention, a double-pulse test platform is built, and double-pulse tests are carried out on the IGBT under different turn-off driving resistors and turn-off currents, so that IGBT turn-off current data under different working conditions are obtained. The corresponding double pulse test under each turn-off driving resistor is carried out on the IGBT to be modeled, the turn-off voltage and the turn-off current of the IGBT are measured by using a high sampling rate oscilloscope, and a plurality of sets of waveform data of different turn-off currents and time, namely a plurality of sets of actually measured turn-off voltages and actually measured turn-off currents, are recorded.
And 102, performing linear approximation processing by adopting the actually measured turn-off current, and determining a current falling slope, a trailing current slope and a trailing current tail end slope.
Further, step 102 may include the following sub-steps S11-S12:
s11, respectively carrying out linear approximate segmentation on the actually measured off currents of each group to generate a phase current data set.
S12, substituting the phase current data set into a preset phase mathematical model to perform current slope calculation, and generating a current falling slope, a trailing current slope and a trailing current tail end slope.
The mathematical model at the preset stage is as follows:
wherein i (t) is a function value corresponding to the current period;is the current falling slope; />Is the trailing current slope;is the trailing current end slope; t is a time period corresponding to the current moment; t is t 1 Is a current invariant time period; t is t 2 Is a current drop period; t is t 3 Is the trailing current period; t is t 4 For a trailing current end time period; i (t) 1 ) The current is a function value of the critical point moment of the constant current time period; i (t) 1 +t 2 ) The function value is the critical point moment of the current falling time period; i (t) 1 +t 2 +t 3 ) Is a function value of the critical point moment of the trailing current time period.
In the embodiment of the invention, the off current is divided into a plurality of segments, the current change slope of each stage is calculated, namely, a stage current data set is substituted into a preset stage mathematical model to perform current slope calculation, and a current falling slope, a trailing current slope and a trailing current tail end slope are generated. The turn-off current of an IGBT is generally divided into a current falling stage and a current trailing stage, and the change of the current in each stage can generate corresponding overvoltage at two ends of the IGBT. The IGBT turns off from zero voltage to a dc voltage phase established across it, the voltage variation of which is mainly determined by the device drive, which is not considered in the present invention. Each section of current is subjected to linear approximation, and the linear mathematical model of each stage is as follows:
In the method, in the process of the invention,for the current falling slope, t 0 For the starting moment, i (t 0 ) The initial stage current value. The slope of each stage (generally, the slope of the current falling stage and the slope of the current trailing stage) is analyzed from the actually measured IGBT turn-off current waveform, and the current change rate acts on the stray inductance of the current conversion circuit to generate overvoltage in the turn-off process of the IGBT.
Specifically, fig. 2 is a double pulse test main loop, by which the off voltage and off current of the device under test T1 are measured. FIG. 3 shows a certain IGBT double pulseFlushing the measured waveform at time t 1 The IGBT keeps on state, the current is unchanged, the voltage slowly rises to the voltage value at the direct current side, the voltage change at the stage depends on the IGBT driving parameters and the internal capacitance of the IGBT, and the stage is not in the consideration range of the invention; time t 2 The phase is IGBT current falling phase, namely current falling time period, the IGBT current falling speed is high, the voltage induced by the stray inductance of the current converting circuit is applied to the two ends of the IGBT, and turn-off voltage peak U is generated 1 The spike voltage overrun may cause IGBT failure; time t 3 The phase is IGBT trailing current phase, i.e. trailing current time period, in which IGBT current slowly decreases, and relatively low overvoltage U is generated at two ends of IGBT 2 The method comprises the steps of carrying out a first treatment on the surface of the Time t 4 The phase is the tail current end of the IGBT, namely the tail current end time period, the IGBT current drops rapidly again (some IGBT turns off and the phase does not exist), and the relatively high overvoltage U is generated at the two ends of the IGBT again 3 Referred to as a second off spike; at time t 5 In the stage, the IGBT current is reduced to zero, the voltage is kept at the direct-current side voltage, and the IGBT is completely turned off.
As shown in fig. 4, the waveform of the actual measurement data of the IGBT off current is analyzed, each current is linearly approximated, and the mathematical model of the current drop stage is:
the trailing current mathematical model is:
the tail current end mathematical model is:
wherein i (t) is a function value corresponding to the current time period;is the current falling slope; />Is the trailing current slope;is the trailing current end slope; t is a time period corresponding to the current moment; t is t 1 Is a current invariant time period; t is t 2 Is a current drop period; t is t 3 Is the trailing current period; t is t 4 For a trailing current end time period; i (t) 1 ) The current is a function value of the critical point moment of the constant current time period; i (t) 1 +t 2 ) The function value is the critical point moment of the current falling time period; i (t) 1 +t 2 +t 3 ) Is a function value of the critical point moment of the trailing current time period. Wherein the function value is substantially equal to the corresponding current value.
And 103, constructing a model according to the current falling slope, the trailing current slope and the trailing current tail end slope, and generating an initial transient turn-off model corresponding to the turn-off driving resistor.
Further, step 103 may comprise the following sub-steps S21-S23:
s21, calculating a current falling slope, a trailing current slope and a trailing current tail end slope with preset inductance values respectively to generate a power supply voltage value in a falling current stage, a trailing current power supply voltage value and a power supply voltage value in a trailing end current stage.
S22, performing model construction by adopting the structural data to generate an IGBT circuit model.
And S23, updating the IGBT circuit model by adopting the power supply voltage value in the falling current stage, the power supply voltage value of the tail current and the power supply voltage value in the tail end current stage, and generating an initial transient turn-off model corresponding to the turn-off driving resistor.
In the embodiment of the invention, the IGBT circuit model is generated by adopting the structural data to carry out model construction. Using three voltage sources U 11 ，U 12 ，U 13 For inductance L in different time periods 1 Applying a back pressure; at t by using tapping switch 2 ，t 3 ，t 4 The power supply is switched in the time period, and the control end of the tapping switch is the G pole of the IGBT model; for modeling and calculating conveniently, inductance L 1 Since the inductance value of (1H) is set, the three voltage source voltage values are calculated (simulation voltage, off waveform) from the measured current slope to obtain the power source voltage value in the down current stage, the power source voltage value in the tail current stage, and the power source voltage value in the tail end current stage. And updating the IGBT circuit model by adopting the power supply voltage value in the falling current stage, the power supply voltage value of the trailing current and the power supply voltage value in the trailing end current stage, and generating an initial transient turn-off model corresponding to the turn-off driving resistor.
In U 11 To reduce the power supply voltage value in the current stage; u (U) 12 The voltage value of the power supply is the trailing current; u (U) 13 Is a trailing end current stage;is the current falling slope; />Is the trailing current slope; />Is the trailing current end slope; t is a time period corresponding to the current moment; t is t 1 Is a current invariant time period; t is t 2 Is electric powerA falling time period; t is t 3 Is the trailing current period; t is t 4 For a trailing current end time period; i.e 1 、i 2 、i 3 Respectively t 2 、t 3 、t 4 Actual measured current of the stage.
And 104, determining a target transient turn-off model corresponding to the turn-off driving resistor according to the simulated turn-off voltage and the actually measured turn-off voltage corresponding to the initial transient turn-off model.
Further, step 104 may include the following substeps S31-S35:
S31, applying the power supply voltage value of the falling current stage, the power supply voltage value of the tail current stage and the power supply voltage value of the tail end current stage to the inductor in the initial transient turn-off model in different time periods to generate initial simulation current.
S32, in a period of time corresponding to the power supply voltage value in the current-falling stage, the power supply voltage value in the tail current stage and the power supply voltage value in the tail end current stage, a tapping switch is adopted to conduct power supply switching, and the initial simulation current is updated to be the intermediate simulation current.
S33, converting the intermediate simulation current into a voltage signal through a current control voltage source.
And S34, smoothing the voltage signal by adopting a first-order low-pass filter to generate a simulated turn-off voltage corresponding to the initial transient turn-off model.
S35, determining a target transient turn-off model corresponding to the turn-off driving resistor according to an error value between the simulated turn-off voltage and the actually measured turn-off voltage.
Further, step S35 may include the following substeps S351-S353:
s351, calculating error values of the simulated turn-off voltage and the actually measured turn-off voltage at different stages respectively, and generating a plurality of error values.
And S352, when the error values are all smaller than a preset error threshold value, taking the initial transient turn-off model corresponding to the simulated turn-off voltage as a target transient turn-off model.
And S353, when the error value is larger than the preset error value, jumping and executing the steps of performing linear approximation processing by adopting the actually measured turn-off current and determining a current falling slope, a trailing current slope and a trailing current tail end slope.
In the embodiment of the invention, as shown in fig. 5, the initial transient turn-off model is a behavioral model of an equivalent circuit for simulating the turn-off transient current of the IGBT, the model is formed by switching voltage sources acting on the inductor at corresponding moments by a classification switch, so that the current change rate of each stage is equal to the actual measurement value of the turn-off current of the IGBT, the current signals on the inductor are converted into equivalent voltage signals by using a current control voltage source, and then the equivalent voltage signals are subjected to smooth filtering by an RC low-pass filter, so that the simulated turn-off voltage corresponding to the initial transient turn-off model is generated. And finally, a signal is given to a voltage-controlled current source to form IGBT turn-off analog current. Wherein three voltage sources U are utilized 11 ，U 12 ，U 13 Back-pressure is applied to the inductance L1 for different periods of time. At t by using tapping switch 2 、t 3 、t 4 The power supply is switched in the time period, and the control end of the tapping switch is the G pole of the IGBT model; diode D2 provides a unidirectional flow path for the inductor current, preventing the inductor current from reversing; the current control voltage source is converted into a voltage signal, and the voltage signal is smoothed by a first-order RC low-pass filter (R1, C1), so that the current junction of each stage is more approximate to the actual one; and finally, converting the IGBT turn-off current into an IGBT turn-off current finally outputted by the model by a voltage control current source, wherein two ends of the voltage control current source are respectively a C pole and an E pole of the IGBT model. The simulation obtains a plurality of simulated turn-off voltages and simulated turn-off currents, and a plurality of error values are generated by respectively calculating the error values between the simulated turn-off voltages and the actually measured turn-off voltages at different stages. And if the error values are all smaller than the preset error threshold value, taking the initial transient turn-off model corresponding to the simulated turn-off voltage as a target transient turn-off model. Otherwise, the step of performing linear approximation processing by adopting the actually measured turn-off current and determining a current falling slope, a tailing current slope and a tailing current tail end slope is carried out in a jumping manner, and model adjustment simulation is carried out again.
And 105, constructing an IGBT turn-off transient simulation model corresponding to the IGBT by adopting a target transient turn-off model corresponding to all turn-off driving resistors.
Further, step 105 may include the following substeps S41-S42:
s41, adopting the shutdown current parameters corresponding to all the target transient shutdown models to construct a shutdown current parameter database.
And S42, binding all target transient turn-off models corresponding to all turn-off driving resistors with a turn-off current parameter database, and generating an IGBT turn-off transient simulation model corresponding to the IGBT.
In the embodiment of the invention, as shown in fig. 6, the transient waveform of the IGBT turn-off current is influenced by the IGBT turn-off driving resistor and the IGBT turn-off transient current, double pulse tests are carried out on the IGBT under different driving resistors and currents to obtain IGBT turn-off current data under different working conditions, and a turn-off current parameter database of the IGBT is established, wherein the database comprises current slopes of all stagesAnd duration, etc. Binding all target transient turn-off models corresponding to all turn-off driving resistors with a turn-off current parameter database to generate IGBT turn-off transient simulation models corresponding to the IGBT, thereby obtaining IGBT turn-off models under different conditions.
The specific embodiment is as follows: as shown in fig. 7 and 8, the modeling method of the invention is applied to model the toshiba 4500V and 3000A crimping type IGBT based on circuit simulation software (as shown in fig. 7), double pulse tests under different driving resistances and turn-off currents are carried out for the device, and transient characteristic data (current slope in each stage of current reduction) of the turn-off current of the IGBT under each working condition are obtained And duration) is stored in the form of a two-bit lookup table (functional block 5) that looks up the corresponding voltage value and time for the corresponding off resistance and current (27 Ω for the example, 2000A for the off current) and inputs the result to the off transient modeling block 6. The 4 voltage signals in the module 6 are connected to the input ends of the multi-input selection switch, and are applied to the input ends of the voltage-controlled voltage source at corresponding moments, different back pressures are applied to the inductor (the initial current of the inductor is set to 2000A in the embodiment), so that the inductor is electrifiedThe current waveform approximates to the IGBT actually measured current waveform, and then the waveform is smoothed by a current control voltage source and a first-order RC filter. The module 7 is a simulation main loop (the embodiment is a half-bridge topology), and the model can simulate the turn-off overvoltage of the IGBT under the stray inductance of different current-converting loops and predict the turn-off overvoltage stress of the IGBT under various working conditions. As shown in fig. 8, the comparison curve of the simulation result of the IGBT turn-off current and turn-off voltage and the actual turn-off measurement result of the device is shown, and it is not difficult to see: the simulation results of the IGBT turn-off current and turn-off overvoltage are basically consistent with the actual measurement results, and the expected simulation precision is achieved. By the modeling method, a high-precision IGBT turn-off transient model can be obtained, and the modeling method of the model is simple and can be realized by applying any circuit simulation software. Compared with the prior art, the method has the advantages of strong universality and high simulation precision, the simulation result and the actual IGBT turn-off voltage have high consistency, and the IGBT turn-off overvoltage under different driving parameters and currents can be accurately predicted and simulated.
In the embodiment of the invention, through acquiring the structural data of the IGBT and a plurality of turn-off driving resistors, the double pulse test is carried out according to the structural data of the turn-off driving resistors, and a plurality of groups of actually measured turn-off voltages and actually measured turn-off currents corresponding to the turn-off driving resistors are generated. And (3) performing linear approximation processing by adopting the actually measured turn-off current, and determining a current falling slope, a trailing current slope and a trailing current tail end slope. And performing model construction based on the current falling slope, the trailing current slope and the trailing current tail end slope, and generating an initial transient turn-off model corresponding to the turn-off driving resistor. And determining a target transient turn-off model corresponding to the turn-off driving resistor based on the simulated turn-off voltage and the actually measured turn-off voltage corresponding to the initial transient turn-off model. And constructing an IGBT turn-off transient simulation model corresponding to the IGBT by adopting a target transient turn-off model corresponding to all turn-off driving resistors. The method solves the technical problems of low practicality of the constructed simulation model caused by the difficulty in modeling, the universality and the difficulty in compatibility of the conventional transient simulation model construction method. And by utilizing the actually measured turn-off current data of the device double-pulse test and analyzing the test data, a simple simulation circuit is built to simulate the turn-off process of the IGBT, and the modeling method is simple. The modeling data of the method come from the actually measured turn-off data of the IGBT, so that the method has higher simulation precision, combines the simulation precision and the modeling difficulty, has the advantages of simplicity, low modeling difficulty and high simulation precision, can perform more accurate simulation on the turn-off overvoltage of the IGBT, and has higher practicability.
Referring to fig. 9, fig. 9 is a block diagram of a construction system of an IGBT transient simulation model according to a second embodiment of the present invention.
The second embodiment of the invention provides a system for constructing an IGBT transient simulation model, which comprises the following components:
the actually measured turn-off voltage and actually measured turn-off current generating module 901 is configured to obtain structural data of the IGBT and a plurality of turn-off driving resistors, and perform a double pulse test according to the turn-off driving resistors by using the structural data, so as to generate a plurality of groups of actually measured turn-off voltages and actually measured turn-off currents corresponding to the turn-off driving resistors.
The current slope determining module 902 is configured to perform linear approximation processing by using the actually measured off current, and determine a current falling slope, a trailing current slope, and a trailing current end slope.
The initial transient turn-off model generation module 903 is configured to perform model construction according to the current falling slope, the trailing current slope, and the trailing current end slope, and generate an initial transient turn-off model corresponding to the turn-off driving resistor.
The target transient shutdown model determining module 904 is configured to determine a target transient shutdown model corresponding to the shutdown driving resistor according to the simulated shutdown voltage and the actually measured shutdown voltage corresponding to the initial transient shutdown model.
The IGBT turn-off transient simulation model building module 905 is configured to build an IGBT turn-off transient simulation model corresponding to the IGBT by using a target transient turn-off model corresponding to all turn-off driving resistors.
Optionally, the current slope determination module 902 includes:
the phase current data set generation module is used for respectively carrying out linear approximate segmentation on the actually measured turn-off current of each group to generate a phase current data set.
The current slope determining submodule is used for substituting the phase current data set into a preset phase mathematical model to perform current slope calculation and generate a current falling slope, a trailing current slope and a trailing current tail end slope.
The mathematical model at the preset stage is as follows:
wherein i (t) is a function value corresponding to the current period;is the current falling slope; />Is the trailing current slope;is the trailing current end slope; t is a time period corresponding to the current moment; t is t 1 Is a current invariant time period; t is t 2 Is a current drop period; t is t 3 Is the trailing current period; t is t 4 For a trailing current end time period; i (t) 1 ) The current is a function value of the critical point moment of the constant current time period; i (t) 1 +t 2 ) The function value is the critical point moment of the current falling time period; i (t) 1 +t 2 +t 3 ) Is a function value of the critical point moment of the trailing current time period.
Optionally, the initial transient shutdown model generation module 903 includes:
the power supply voltage value calculation module is used for calculating the power supply voltage value in the descending current stage, the power supply voltage value in the trailing current stage and the power supply voltage value in the trailing end current stage by adopting the current descending slope, the trailing current slope and the trailing current end slope to respectively and preset inductance values.
And the IGBT circuit model generating module is used for carrying out model construction by adopting the structural data to generate an IGBT circuit model.
The initial transient turn-off model generation submodule is used for updating the IGBT circuit model by adopting the power supply voltage value in the falling current stage, the power supply voltage value in the tail current stage and the power supply voltage value in the tail end current stage to generate an initial transient turn-off model corresponding to the turn-off driving resistor.
Optionally, the target transient shutdown model determination module 904 includes:
the initial simulation current generation module is used for applying the power supply voltage value of the falling current stage, the power supply voltage value of the tail current stage and the power supply voltage value of the tail end current stage to the inductor in the initial transient turn-off model in different time periods to generate initial simulation current.
And the intermediate simulation current generation module is used for carrying out power switching by adopting a tapping switch in a period of time corresponding to the power voltage value of the current stage of the falling current, the power voltage value of the tail current and the power voltage value of the current stage of the tail end, and updating the initial simulation current into the intermediate simulation current.
And the voltage signal generation module is used for converting the intermediate simulation current into a voltage signal through the current control voltage source.
The simulation turn-off voltage generation module is used for smoothing the voltage signal by adopting a first-order low-pass filter to generate a simulation turn-off voltage corresponding to the initial transient turn-off model.
And the target transient turn-off model determining submodule is used for determining a target transient turn-off model corresponding to the turn-off driving resistor according to an error value between the simulated turn-off voltage and the actually measured turn-off voltage.
Optionally, the target transient shutdown model determination submodule may perform the steps of:
calculating error values of the simulated turn-off voltage and the actually measured turn-off voltage at different stages respectively to generate a plurality of error values;
when the error values are all smaller than a preset error threshold value, taking an initial transient turn-off model corresponding to the simulated turn-off voltage as a target transient turn-off model;
when the error value is larger than the preset error value, the step of performing linear approximation processing by adopting the actually measured turn-off current and determining a current falling slope, a trailing current slope and a trailing current tail end slope is performed in a jumping mode.
Optionally, the IGBT turn-off transient simulation model building module 905 includes:
the shutdown current parameter database construction module is used for constructing a shutdown current parameter database by adopting shutdown current parameters corresponding to all target transient shutdown models.
And the IGBT turn-off transient simulation model construction submodule is used for binding all target transient turn-off models corresponding to all turn-off driving resistors with the turn-off current parameter database to generate IGBT turn-off transient simulation models corresponding to the IGBTs.
The embodiment of the invention also provides electronic equipment, which comprises: a memory and a processor, the memory storing a computer program; the computer program, when executed by a processor, causes the processor to perform the IGBT transient simulation model building method of any of the embodiments described above.
The memory may be an electronic memory such as a flash memory, an EEPROM (electrically erasable programmable read only memory), an EPROM, a hard disk, or a ROM. The memory has memory space for program code to perform any of the method steps described above. For example, the memory space for the program code may include individual program code for implementing the various steps in the above method, respectively. The program code can be read from or written to one or more computer program products. These computer program products comprise a program code carrier such as a hard disk, a Compact Disc (CD), a memory card or a floppy disk. The program code may be compressed, for example, in a suitable form. The codes, when executed by a computing processing device, cause the computing processing device to perform the steps in the IGBT transient simulation model building method described above.
The embodiment of the invention also provides a computer readable storage medium, on which a computer program is stored, which when executed by a processor, implements the method for constructing the IGBT transient simulation model according to any of the above embodiments.
It will be clear to those skilled in the art that, for convenience and brevity of description, specific working procedures of the above-described systems, apparatuses and units may refer to corresponding procedures in the foregoing method embodiments, which are not repeated herein.
In the several embodiments provided in this application, it should be understood that the disclosed systems, apparatuses, and methods may be implemented in other ways. For example, the apparatus embodiments described above are merely illustrative, e.g., the division of elements is merely a logical functional division, and there may be additional divisions of actual implementation, e.g., multiple elements or components may be combined or integrated into another system, or some features may be omitted, or not performed. Alternatively, the coupling or direct coupling or communication connection shown or discussed with each other may be an indirect coupling or communication connection via some interfaces, devices or units, which may be in electrical, mechanical or other form.
The units described as separate units may or may not be physically separate, and units shown as units may or may not be physical units, may be located in one place, or may be distributed over a plurality of network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.
In addition, each functional unit in the embodiments of the present invention may be integrated in one processing unit, or each unit may exist alone physically, or two or more units may be integrated in one unit. The integrated units may be implemented in hardware or in software functional units.
The integrated units, if implemented in the form of software functional units and sold or used as stand-alone products, may be stored in a computer readable storage medium. Based on such understanding, the technical solution of the present invention may be embodied in essence or a part contributing to the prior art or all or part of the technical solution in the form of a software product stored in a storage medium, including several instructions for causing a computer device (which may be a personal computer, a server, or a network device, etc.) to perform all or part of the steps of the methods of the embodiments of the present invention. And the aforementioned storage medium includes: a U-disk, a removable hard disk, a Read-Only Memory (ROM), a random access Memory (RAM, random Access Memory), a magnetic disk, or an optical disk, or other various media capable of storing program codes.
The above embodiments are only for illustrating the technical solution of the present invention, and are not limiting; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. The IGBT transient simulation model construction method is characterized by comprising the following steps of:
acquiring structural data of an IGBT and a plurality of turn-off driving resistors, respectively adopting the structural data to perform double pulse test based on the turn-off driving resistors, and generating a plurality of groups of actually measured turn-off voltages and actually measured turn-off currents corresponding to the turn-off driving resistors;
performing linear approximation processing by adopting the actually measured turn-off current, and determining a current falling slope, a trailing current slope and a trailing current tail end slope;
performing model construction according to the current falling slope, the trailing current slope and the trailing current tail end slope, and generating an initial transient turn-off model corresponding to the turn-off driving resistor;
Determining a target transient turn-off model corresponding to the turn-off driving resistor according to the simulated turn-off voltage corresponding to the initial transient turn-off model and the actually measured turn-off voltage;
and constructing an IGBT turn-off transient simulation model corresponding to the IGBT by adopting a target transient turn-off model corresponding to all the turn-off driving resistors.
2. The method for constructing an IGBT transient simulation model according to claim 1, wherein the step of determining a current falling slope, a tailing current slope, and a tailing current end slope by performing a linear approximation process using the actually measured off current includes:
respectively carrying out linear approximate segmentation on the actually measured off currents of each group to generate a phase current data set;
substituting the phase current data set into a preset phase mathematical model to perform current slope calculation, and generating a current falling slope, a trailing current slope and a trailing current tail end slope;
the mathematical model of the preset stage is as follows:
wherein i (t) is a function value corresponding to the current period;is the current falling slope; />Is the trailing current slope; />Is the trailing current end slope; t is a time period corresponding to the current moment; t is t 1 Is a current invariant time period; t is t 2 Is a current drop period; t is t 3 Is the trailing current period; t is t 4 For a trailing current end time period; i (t) 1 ) The current is a function value of the critical point moment of the constant current time period; i (t) 1 +t 2 ) The function value is the critical point moment of the current falling time period; i (t) 1 +t 2 +t 3 ) Is a function value of the critical point moment of the trailing current time period.
3. The method for constructing an IGBT transient simulation model according to claim 1, wherein the step of constructing a model according to the current falling slope, the tail current slope, and the tail current end slope, and generating an initial transient shutdown model corresponding to the shutdown driving resistor includes:
calculating the current falling slope, the trailing current slope and the trailing current tail end slope with preset inductance values respectively to generate a power supply voltage value in a falling current stage, a power supply voltage value of the trailing current and a power supply voltage value in a trailing end current stage;
performing model construction by adopting the structural data to generate an IGBT circuit model;
and updating the IGBT circuit model by adopting the power supply voltage value in the current-falling stage, the power supply voltage value in the tail current stage and the power supply voltage value in the tail end current stage, and generating an initial transient turn-off model corresponding to the turn-off driving resistor.
4. The method for constructing an IGBT transient simulation model according to claim 3, wherein the step of determining a target transient shutdown model corresponding to the shutdown driving resistor according to the simulated shutdown voltage corresponding to the initial transient shutdown model and the actually measured shutdown voltage includes:
applying the power supply voltage value of the falling current stage, the power supply voltage value of the tail current stage and the power supply voltage value of the tail end current stage to the inductor in the initial transient turn-off model in different time periods to generate initial simulation current;
in the period of time corresponding to the power supply voltage value in the current falling stage, the power supply voltage value in the tail current stage and the power supply voltage value in the tail end current stage, a tapping switch is adopted to conduct power supply switching, and the initial simulation current is updated to be an intermediate simulation current;
converting the intermediate simulation current into a voltage signal by a current control voltage source;
smoothing the voltage signal by adopting a first-order low-pass filter to generate a simulated turn-off voltage corresponding to the initial transient turn-off model;
and determining a target transient turn-off model corresponding to the turn-off driving resistor according to an error value between the simulated turn-off voltage and the actually measured turn-off voltage.
5. The method according to claim 4, wherein the step of determining the target transient shutdown model corresponding to the shutdown driving resistor according to the error value between the simulated shutdown voltage and the actually measured shutdown voltage includes:
calculating error values of the simulated turn-off voltage and the actually measured turn-off voltage at different stages respectively to generate a plurality of error values;
when the error values are all smaller than a preset error threshold value, taking an initial transient turn-off model corresponding to the simulated turn-off voltage as a target transient turn-off model;
and when the error value is larger than the preset error value, skipping to execute the step of performing linear approximation processing by adopting the actually measured turn-off current to determine a current falling slope, a trailing current slope and a trailing current tail end slope.
6. The method for constructing an IGBT transient simulation model according to claim 1, wherein the step of constructing an IGBT turn-off transient simulation model corresponding to the IGBT using target transient turn-off models corresponding to all the turn-off driving resistors includes:
adopting all the shutdown current parameters corresponding to the target transient shutdown model to construct a shutdown current parameter database;
Binding all target transient turn-off models corresponding to the turn-off driving resistors with the turn-off current parameter database, and generating an IGBT turn-off transient simulation model corresponding to the IGBT.
7. An IGBT transient simulation model building system, comprising:
the device comprises an actually measured turn-off voltage and actually measured turn-off current generating module, a power supply module and a power supply module, wherein the actually measured turn-off voltage and actually measured turn-off current generating module is used for acquiring structural data of an IGBT and a plurality of turn-off driving resistors, and performing double pulse test by adopting the structural data based on the turn-off driving resistors to generate a plurality of groups of actually measured turn-off voltages and actually measured turn-off currents corresponding to the turn-off driving resistors;
the current slope determining module is used for performing linear approximation processing by adopting the actually measured turn-off current to determine a current falling slope, a trailing current slope and a trailing current tail end slope;
the initial transient turn-off model generation module is used for carrying out model construction according to the current falling slope, the tail current slope and the tail current tail end slope to generate an initial transient turn-off model corresponding to the turn-off driving resistor;
the target transient turn-off model determining module is used for determining a target transient turn-off model corresponding to the turn-off driving resistor according to the simulated turn-off voltage corresponding to the initial transient turn-off model and the actually measured turn-off voltage;
And the IGBT turn-off transient simulation model construction module is used for constructing an IGBT turn-off transient simulation model corresponding to the IGBT by adopting all target transient turn-off models corresponding to the turn-off driving resistors.
8. The IGBT transient simulation model building system of claim 7, wherein the current slope determination module comprises:
the phase current data set generation module is used for respectively carrying out linear approximate segmentation on the actually measured turn-off current of each group to generate a phase current data set;
the current slope determining submodule is used for substituting the phase current data set into a preset phase mathematical model to perform current slope calculation and generate a current falling slope, a trailing current slope and a trailing current tail end slope;
the mathematical model of the preset stage is as follows:
wherein i (t) isThe function value corresponding to the current time period;is the current falling slope; />Is the trailing current slope; />Is the trailing current end slope; t is a time period corresponding to the current moment; t is t 1 Is a current invariant time period; t is t 2 Is a current drop period; t is t 3 Is the trailing current period; t is t 4 For a trailing current end time period; i (t) 1 ) The current is a function value of the critical point moment of the constant current time period; i (t) 1 +t 2 ) The function value is the critical point moment of the current falling time period; i (t) 1 +t 2 +t 3 ) Is a function value of the critical point moment of the trailing current time period.
9. An electronic device comprising a memory and a processor, wherein the memory stores a computer program that, when executed by the processor, causes the processor to perform the steps of the IGBT transient simulation model construction method according to any one of claims 1 to 6.
10. A computer-readable storage medium, on which a computer program is stored, characterized in that the computer program, when executed, implements the IGBT transient simulation model construction method according to any one of claims 1 to 6.
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