CN117606652A - Integral piezoresistive flexible sensor - Google Patents
Integral piezoresistive flexible sensor Download PDFInfo
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- CN117606652A CN117606652A CN202311563830.0A CN202311563830A CN117606652A CN 117606652 A CN117606652 A CN 117606652A CN 202311563830 A CN202311563830 A CN 202311563830A CN 117606652 A CN117606652 A CN 117606652A
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/02—Layer formed of wires, e.g. mesh
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/14—Layered products comprising a layer of metal next to a fibrous or filamentary layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/18—Layered products comprising a layer of metal comprising iron or steel
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B5/00—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
- B32B5/02—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by structural features of a fibrous or filamentary layer
- B32B5/06—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by structural features of a fibrous or filamentary layer characterised by a fibrous or filamentary layer mechanically connected, e.g. by needling to another layer, e.g. of fibres, of paper
-
- D—TEXTILES; PAPER
- D04—BRAIDING; LACE-MAKING; KNITTING; TRIMMINGS; NON-WOVEN FABRICS
- D04B—KNITTING
- D04B21/00—Warp knitting processes for the production of fabrics or articles not dependent on the use of particular machines; Fabrics or articles defined by such processes
- D04B21/10—Open-work fabrics
- D04B21/12—Open-work fabrics characterised by thread material
-
- D—TEXTILES; PAPER
- D04—BRAIDING; LACE-MAKING; KNITTING; TRIMMINGS; NON-WOVEN FABRICS
- D04B—KNITTING
- D04B21/00—Warp knitting processes for the production of fabrics or articles not dependent on the use of particular machines; Fabrics or articles defined by such processes
- D04B21/14—Fabrics characterised by the incorporation by knitting, in one or more thread, fleece, or fabric layers, of reinforcing, binding, or decorative threads; Fabrics incorporating small auxiliary elements, e.g. for decorative purposes
- D04B21/16—Fabrics characterised by the incorporation by knitting, in one or more thread, fleece, or fabric layers, of reinforcing, binding, or decorative threads; Fabrics incorporating small auxiliary elements, e.g. for decorative purposes incorporating synthetic threads
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2262/00—Composition or structural features of fibres which form a fibrous or filamentary layer or are present as additives
- B32B2262/02—Synthetic macromolecular fibres
- B32B2262/0276—Polyester fibres
- B32B2262/0284—Polyethylene terephthalate [PET] or polybutylene terephthalate [PBT]
-
- D—TEXTILES; PAPER
- D10—INDEXING SCHEME ASSOCIATED WITH SUBLASSES OF SECTION D, RELATING TO TEXTILES
- D10B—INDEXING SCHEME ASSOCIATED WITH SUBLASSES OF SECTION D, RELATING TO TEXTILES
- D10B2101/00—Inorganic fibres
- D10B2101/10—Inorganic fibres based on non-oxides other than metals
- D10B2101/12—Carbon; Pitch
-
- D—TEXTILES; PAPER
- D10—INDEXING SCHEME ASSOCIATED WITH SUBLASSES OF SECTION D, RELATING TO TEXTILES
- D10B—INDEXING SCHEME ASSOCIATED WITH SUBLASSES OF SECTION D, RELATING TO TEXTILES
- D10B2101/00—Inorganic fibres
- D10B2101/20—Metallic fibres
-
- D—TEXTILES; PAPER
- D10—INDEXING SCHEME ASSOCIATED WITH SUBLASSES OF SECTION D, RELATING TO TEXTILES
- D10B—INDEXING SCHEME ASSOCIATED WITH SUBLASSES OF SECTION D, RELATING TO TEXTILES
- D10B2331/00—Fibres made from polymers obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds, e.g. polycondensation products
- D10B2331/02—Fibres made from polymers obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds, e.g. polycondensation products polyamides
-
- D—TEXTILES; PAPER
- D10—INDEXING SCHEME ASSOCIATED WITH SUBLASSES OF SECTION D, RELATING TO TEXTILES
- D10B—INDEXING SCHEME ASSOCIATED WITH SUBLASSES OF SECTION D, RELATING TO TEXTILES
- D10B2331/00—Fibres made from polymers obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds, e.g. polycondensation products
- D10B2331/04—Fibres made from polymers obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds, e.g. polycondensation products polyesters, e.g. polyethylene terephthalate [PET]
Landscapes
- Engineering & Computer Science (AREA)
- Textile Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Force Measurement Appropriate To Specific Purposes (AREA)
Abstract
The application relates to an integrated piezoresistive flexible sensor, and relates to the field of textiles. The integral piezoresistive flexible sensor can be prepared only by a full-width weft-inserted double needle bar warp knitting machine, the chain electrode layer and the weft-inserted electrode layer are respectively fixed on the first substrate layer and the second substrate layer by adopting a knitting method, and the weft-inserted electrode layer is reinforced and fixed by the weft-inserted electrode fixing layer designed on the second substrate layer, so that the integral forming of the sensor electrode and the dielectric layer is realized, and the manufacturing mode and the technological process of the piezoresistive flexible sensor are simplified and shortened. In addition, the sandwich fabric formed by the first surface layer, the second surface layer and the piezoresistive layer adopts warp-knitted spacer fabric, compared with weft knitting, the warp-knitted spacer fabric has good supporting property and more stable structure, and the conductive fabric woven by conductive yarns replaces the electrode layer of the conventional piezoresistive flexible sensor, so that the complex manufacturing process of the electrode layer is simplified, and the sandwich fabric is suitable for large-area pressure-changing scenes such as mattresses, cushions and the like.
Description
Technical Field
The application relates to the technical field of textiles, in particular to an integrally formed piezoresistive flexible sensor.
Background
Piezoresistive flexible sensors can be broadly divided into two types: the first is in the form of multi-layer material composite package, which generally comprises an upper packaging layer, a lower packaging layer, an upper electrode layer, a lower electrode layer, a dielectric/electric layer or a piezoresistive layer, and the piezoresistive flexible sensor in the form of multi-layer composite package also comprises a piezoresistive flexible sensor in the form of adding microstructures (such as a boss structure, a conical structure, a pyramid structure, a hemispherical structure, a micro-nano structure and the like) on the upper packaging layer and the lower packaging layer; the second type is a piezoresistive flexible sensor formed by sequentially adding and compounding multiple layers of different materials on a substrate, and generally comprises a flexible substrate layer, an electrode layer, a sensitive layer/piezoresistive layer and a protective layer/packaging layer.
In the related art, the flexible substrate material commonly used for the piezoresistive flexible sensor is similar to the packaging layer material, and Polydimethylsiloxane (PDMS), polyethylene terephthalate (PET), polyimide (PI), polyvinyl chloride (PVC), TUP film, thermoplastic Polyurethane Elastomer (TPE), silicone rubber, and the like are often used; the electrode layer is made of Carbon Nanotubes (CNTs), graphene (GR), carbon black, gold, silver, copper and other metals, such as metal sheets, metal nanosheets, interdigital electrodes and the like; the dielectric/electric layer or the piezoresistive layer is mostly made of Ecoflex, melamine sponge, conductive silica gel sponge and the like; the common lead pins are mainly FPC connectors, conductive silver paste, copper foil and the like; the composite modes of the layers are different, for example, the packaging layer and the electrode layer are connected in a mode of coating, packaging, pasting, printing, depositing, pouring, dip coating, spin coating, smearing and the like; the electrode layer and the lead pins are connected by adopting conductive silver paste and the like.
However, the piezoresistive flexible sensor in the related art has the following drawbacks: the selected raw materials are complex and various, each level is generally manufactured through complicated steps, then the levels are combined together in various modes, finally the lead pins are packaged and led out, and the piezoresistive flexible sensor is high in manufacturing cost and poor in durability due to the complex manufacturing process and the simple packaging method, so that difficulties exist in industrial production and practical application.
Disclosure of Invention
The present application is directed to an integrally formed piezoresistive flexible sensor, so as to solve the problems in the prior art.
In order to achieve the above purpose, the technical scheme adopted in the application is as follows:
in a first aspect, the present application provides an integrally formed piezoresistive flexible sensor, comprising:
a first surface layer including a first base layer and a chaining electrode layer interwoven with each other;
a second surface layer parallel to the first surface layer and including a second base layer and a weft-inserted electrode layer interwoven with each other; and
a piezoresistive layer located between the first skin layer and the second skin layer for connecting the first skin layer to the second skin layer;
wherein the first and second substrate layers are each comprised of a full-penetration warp-flat tissue; the braiding electrode layer is formed by a 5-through 5-empty braiding structure, or a combination of the braiding structure and a cushion-missing structure, or a combination of the braiding structure and a weft insertion structure; the weft insertion electrode layer is formed by 10-through 10-empty full-width weft insertion tissues; the piezoresistive layer is formed by full penetration 1-0-0-1// tissue or 5 empty 5 penetration (1-0-2-3/4-5-3-2) 5/(1-0-0-1) 10// tissue; the chaining electrode layer and the weft insertion electrode layer are woven by adopting conductive yarns.
In one possible implementation, the second surface layer further includes:
the weft insertion electrode fixing layer is used for fixing the weft insertion electrode layer and is composed of 5-space 5-penetrating knitting chain tissues; the 5-void 5-penetrating braid organization of the weft insertion electrode fixing layer is complementary with the 5-void 5-penetrating braid organization of the braid electrode layer.
In one possible implementation, the chaining electrode layer and the weft insertion electrode layer each have conductive yarns reserved for on-machine operation as wire pins.
In one possible implementation, both the chaining electrode layer and the weft insertion electrode layer are woven with 70-150D conductive yarns.
In one possible implementation, the first substrate layer and the second substrate layer are both woven with 70-150D polyester yarns.
In one possible implementation, the piezoresistive layer is woven with 30-50D nylon or polyester monofilament.
In one possible implementation, the weft inserted electrode fixing layer is woven with 70-150D polyester yarns.
In one possible implementation, the conductive yarn is made of a material including at least one or more of gold, silver, copper, stainless steel, and graphene.
In one possible implementation, the thickness of the integrally formed piezoresistive flexible sensor is 2-7mm.
In a second aspect, the present application provides the use of an integrally formed piezoresistive flexible sensor according to the above, in the field of mattresses or cushions.
The beneficial effects that this application provided technical scheme brought include at least:
1. the integral piezoresistive flexible sensor can be prepared only by a full-width weft-inserted double needle bar warp knitting machine, the chain electrode layer and the weft-inserted electrode layer are respectively fixed on the first substrate layer and the second substrate layer by adopting a knitting method, and the weft-inserted electrode layer is reinforced and fixed by the weft-inserted electrode fixing layer designed on the second substrate layer, so that the integral forming of the sensor electrode and the dielectric layer is realized, and the manufacturing mode and the technological process of the piezoresistive flexible sensor are simplified and shortened.
2. The sandwich fabric formed by the first surface layer, the second surface layer and the piezoresistive layer in the integrated piezoresistive flexible sensor adopts the warp-knitted spacer fabric, compared with weft knitting, the warp-knitted spacer fabric has good support and more stable structure, and the conductive fabric woven by conductive yarns replaces the electrode layer of the piezoresistive flexible sensor in the past, so that the complex manufacturing process of the electrode layer is simplified.
3. The integrally formed piezoresistive flexible sensor reserves conductive yarns with proper lengths during on-machine weaving and off-machine weaving, solves the problem that conductive pins are not firmly connected with the sensor in a coating or sticking mode and are easy to drop, and can improve the durability of the piezoresistive flexible sensor.
4. When the integral piezoresistive flexible sensor works, the chain electrode layer and the weft insertion electrode layer in a non-pressure state are in non-contact state, the whole circuit is in an open-circuit state, no energy consumption and no heat are generated in the state, the effects of saving energy and prolonging the service life of the piezoresistive flexible sensor are achieved, and the integral piezoresistive flexible sensor can be woven greatly and is applied to the scenes of large-area pressure changes such as mattresses, cushions and the like.
Drawings
The accompanying drawings are included to provide a further understanding of the application and are incorporated in and constitute a part of this specification, illustrate the application and together with the embodiments of the application, and not constitute a limitation to the application. In the drawings:
FIG. 1 is a schematic diagram illustrating the working principle of an integrally formed piezoresistive flexible sensor according to an embodiment of the present application in a non-pressure state;
FIG. 2 is a schematic diagram illustrating the operation principle of the integrally formed piezoresistive flexible sensor according to the first embodiment of the present application in a pressed state;
FIG. 3 is a three-dimensional simulation diagram of an integrally formed piezoresistive flexible sensor according to an embodiment of the present application;
FIG. 4 is a simulation diagram of a chaining electrode layer of an integrally formed piezoresistive flexible sensor according to an embodiment of the present application;
FIG. 5 is a simulation diagram of the weft-inserted electrode layer of the integrally formed piezoresistive flexible sensor according to the first embodiment of the present application;
FIG. 6 is a simulation diagram of front and back needle beds of an integrally formed piezoresistive flexible sensor according to an embodiment of the present application;
FIG. 7 is a physical diagram of an integrally formed piezoresistive flexible sensor according to an embodiment of the present application; wherein: (a) and (b) are the real object diagrams of the front and back surfaces of the chaining electrode layer, (c) and (d) are the real object diagrams of the front and back surfaces of the weft insertion electrode layer, and (e) is the real object diagram of the piezoresistive layer;
FIG. 8 is a schematic diagram illustrating the working principle of the piezoresistive flexible sensor in a non-pressure state;
FIG. 9 is a schematic diagram illustrating the working principle of the integrally formed piezoresistive flexible sensor according to the second embodiment of the present application in a pressed state;
FIG. 10 is a three-dimensional simulation diagram of an integrally formed piezoresistive flexible sensor according to a second embodiment of the present application;
FIG. 11 is a diagram showing a simulation of the chaining electrode layer of the integrally formed piezoresistive flexible sensor according to the second embodiment of the present application;
FIG. 12 is a simulation diagram of the weft-inserted electrode layer of the integrally formed piezoresistive flexible sensor according to the second embodiment of the present application;
FIG. 13 is a simulation diagram of the front and back needle beds of the integrally formed piezoresistive flexible sensor according to the second embodiment of the present application;
FIG. 14 is a physical diagram of an integrally formed piezoresistive flexible sensor according to a second embodiment of the present application; wherein: (a) and (b) are the real object diagrams of the front and back surfaces of the chaining electrode layer, (c) and (d) are the real object diagrams of the front and back surfaces of the weft insertion electrode layer, and (e) is the real object diagram of the piezoresistive layer;
in the figure:
1. a first skin layer; 2. a second skin layer; 3. a piezoresistive layer; 4. a lead pin;
11. a first substrate layer; 12. a chaining electrode layer;
21. a second substrate layer; 22. a weft insertion electrode layer; 23. and a weft-inserted electrode fixing layer.
Detailed Description
The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all, of the embodiments of the present application. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are within the scope of the present disclosure.
Wherein like parts are designated by like reference numerals. It should be noted that the words "front", "rear", "left", "right", "upper" and "lower" used in the following description refer to directions in drawings of the present specification, and the words "bottom" and "top", "inner" and "outer" refer to directions toward or away from, respectively, a specific component. Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present specification, the meaning of "plurality" is two or more.
The present application is further described below with reference to the drawings and examples.
Embodiment one:
fig. 1 and 2 are schematic diagrams respectively illustrating an operation principle of an integrally formed piezoresistive flexible sensor according to an exemplary embodiment of the present application, in a non-pressure state and a pressure state, where the integrally formed piezoresistive flexible sensor includes: a first skin layer 1, a second skin layer 2 parallel to the first skin layer 1, and a piezoresistive layer 3 between the first skin layer 1 and the second skin layer 2 for connecting the first skin layer 1 and the second skin layer 2; wherein the first surface layer 1 comprises a first substrate layer 11 and a chaining electrode layer 12 which are interwoven, the second surface layer 2 comprises a second substrate layer 21 and a weft-inserted electrode layer 22 which are interwoven, and the second surface layer 2 further comprises a weft-inserted electrode fixing layer 23 for fixing the weft-inserted electrode layer 22.
In detail, referring to fig. 3 to 6, three-dimensional simulation diagrams of the integrated piezoresistive flexible sensor, simulation diagrams of the chaining electrode layer, simulation diagrams of the weft insertion electrode layer, and simulation diagrams of the front and rear needle beds are shown, respectively, and can be seen in the figures: both the chaining electrode layer 12 and the weft insertion electrode layer 22 respectively have conductive yarns reserved during the on-machine operation as the wire pins 4.
In this embodiment, a full width weft inserted double needle bar warp knitting machine type with machine number E24 is selected, in which GB1 bar is used to knit the first base layer 11, GB2 bar is used to knit the chain electrode layer 12, GB4 bar is used to knit the piezoresistive layer 3, GB5 bar is used to knit the weft inserted electrode fixing layer 23, GB6 bar is used to knit the weft inserted electrode layer 22, and GB7 bar is used to knit the second base layer 21.
Specifically, the first substrate layer 11, the second substrate layer 21 and the weft insertion electrode fixing layer 23 are woven by using 100D polyester multifilament, the chain electrode layer 12 and the weft insertion electrode layer 22 are woven by using 120D/3 stainless steel conductive wires, and the piezoresistive layer 3 is woven by using 30D polyester monofilament. The lead pins 4 of the chaining electrode layer 12 are reserved in a mode of not looping stainless steel conductive wires by designing the pad lacking structure of 100 rows, and the lead pins 4 of the weft insertion electrode layer 22 are reserved before and after weaving by an upper machine. The thickness of the integrally formed piezoresistive flexible sensor obtained through weaving is 4mm, the transverse density is 10wpc, the longitudinal density is 18cpc, and a physical diagram of the integrally formed piezoresistive flexible sensor is shown in FIG. 7.
In this embodiment, a specific yarn-laying process of the integrally formed piezoresistive flexible sensor is shown in table 1 below:
table 1:
notably, the 5 void 5 weave of the weft inserted electrode anchor layer 22 is complementary to the 5 void 5 weave of the weave electrode layer 12.
It should be noted that, a lead pin 4 with a proper length is reserved, and the resistance signal value is transmitted to the testing instrument through the lead pin 4. The testing method comprises the following steps: the resistance change of the piezoresistive flexible sensor is tested by adopting a digital multimeter, two crocodile clamps on the digital multimeter are clamped on 5 lead pins 4 reserved below 5 braiding columns in the braiding electrode layer 12, the other is clamped on 10 lead pins 4 in the weft insertion electrode layer 22 corresponding to the upper and lower positions of the braiding electrode layer 12, and then the piezoresistive flexible sensor is subjected to pressurization and pressure release tests to study the change condition of the resistance value along with the pressure.
Embodiment two:
fig. 8 and 9 are schematic diagrams respectively illustrating an operation principle of an integrally formed piezoresistive flexible sensor according to an exemplary embodiment of the present application, in a non-pressure state and a pressure state, where the integrally formed piezoresistive flexible sensor includes: a first skin layer 1, a second skin layer 2 parallel to the first skin layer 1, and a piezoresistive layer 3 between the first skin layer 1 and the second skin layer 2 for connecting the first skin layer 1 and the second skin layer 2; wherein the first surface layer 1 comprises a first substrate layer 11 and a chaining electrode layer 12 which are interwoven, the second surface layer 2 comprises a second substrate layer 21 and a weft-inserted electrode layer 22 which are interwoven, and the second surface layer 2 further comprises a weft-inserted electrode fixing layer 23 for fixing the weft-inserted electrode layer 22.
In detail, referring to fig. 10 to 13, three-dimensional simulation diagrams of the integrated piezoresistive flexible sensor, simulation diagrams of the chaining electrode layer, simulation diagrams of the weft insertion electrode layer, and simulation diagrams of the front and back needle beds are shown, respectively, and can be seen in the figures: both the chaining electrode layer 12 and the weft insertion electrode layer 22 respectively have conductive yarns reserved during the on-machine operation as the wire pins 4.
In this embodiment, a full width weft inserted double needle bar warp knitting machine type with machine number E24 is selected, in which GB1 bar is used to knit the first base layer 11, GB2 bar is used to knit the chain electrode layer 12, GB4 bar is used to knit the piezoresistive layer 3, GB5 bar is used to knit the weft inserted electrode fixing layer 23, GB6 bar is used to knit the weft inserted electrode layer 22, and GB7 bar is used to knit the second base layer 21.
Specifically, the first substrate layer 11, the second substrate layer 21 and the weft insertion electrode fixing layer 23 are woven by using 100D polyester multifilament, the chain electrode layer 12 and the weft insertion electrode layer 22 are woven by using 120D/3 stainless steel conductive wires, and the piezoresistive layer 3 is woven by using 30D polyester monofilament. The lead pins 4 of the chaining electrode layer 12 are reserved in a mode of not looping stainless steel conductive wires by designing the pad lacking structure of 100 rows, and the lead pins 4 of the weft insertion electrode layer 22 are reserved before and after weaving by an upper machine. The thickness of the integrally formed piezoresistive flexible sensor obtained through weaving is 4mm, the transverse density is 10wpc, the longitudinal density is 18cpc, and a physical diagram of the integrally formed piezoresistive flexible sensor is shown in fig. 14.
In this embodiment, a specific yarn-laying process of the integrally formed piezoresistive flexible sensor is shown in table 2 below:
table 2:
notably, the 5 void 5 weave of the weft inserted electrode anchor layer 22 is complementary to the 5 void 5 weave of the weave electrode layer 12.
It should be noted that, a lead pin 4 with a proper length is reserved, and the resistance signal value is transmitted to the testing instrument through the lead pin 4. The testing method comprises the following steps: the resistance change of the piezoresistive flexible sensor is tested by adopting a digital multimeter, two crocodile clamps on the digital multimeter are clamped on 5 lead pins 4 reserved below 5 braiding columns in the braiding electrode layer 12, the other is clamped on 10 lead pins 4 in the weft insertion electrode layer 22 corresponding to the upper and lower positions of the braiding electrode layer 12, and then the piezoresistive flexible sensor is subjected to pressurization and pressure release tests to study the change condition of the resistance value along with the pressure.
Next, the operation principle of the integrated piezoresistive flexible sensor according to the first and second embodiments of the present application will be described with reference to the operation principle diagrams (i.e., fig. 1 and 2 of the first embodiment and fig. 8 and 9 of the second embodiment).
The integrated piezoresistive flexible sensor has the advantages that under the action of no pressure, conductive yarns in the chaining electrode layer and the weft insertion electrode layer are in a mutually separated state; under the action of pressure, the distance between the first surface layer and the second surface layer is changed, the conductive yarns in the chain electrode layer and the weft insertion electrode layer are gradually contacted and the contact area is increased along with the increase of the pressure, so that the electrical property of the conductive yarns in the chain electrode layer and the weft insertion electrode layer at the contact point is changed, when current flows through the contact point of the two conductive yarns, the contact resistance is changed to cause the resistance change of the sensor, thereby causing the resistance value change and realizing the purpose of measuring the pressure change; the upper electrode and the lower electrode are in non-contact under the action of no pressure, the whole circuit is in an open circuit state, no energy consumption and no heat are generated under the state, and the effects of saving energy and prolonging the service life are achieved.
In summary, the integrally formed piezoresistive flexible sensor can be manufactured only through the full-width weft-inserted double needle bar warp knitting machine, the chain electrode layer and the weft-inserted electrode layer are respectively fixed on the first substrate layer and the second substrate layer by adopting a knitting method, and the weft-inserted electrode layer is reinforced and fixed by designing the weft-inserted electrode fixing layer on the second substrate layer, so that the integral forming of the sensor electrode and the dielectric layer is realized, and the manufacturing mode and the technological process of the piezoresistive flexible sensor are simplified and shortened. The sandwich fabric formed by the first surface layer, the second surface layer and the piezoresistive layer in the integrated piezoresistive flexible sensor adopts the warp-knitted spacer fabric, compared with weft knitting, the warp-knitted spacer fabric has good support and more stable structure, and the conductive fabric woven by conductive yarns replaces the electrode layer of the piezoresistive flexible sensor in the past, so that the complex manufacturing process of the electrode layer is simplified. The integrally formed piezoresistive flexible sensor reserves conductive yarns with proper lengths during on-machine weaving and off-machine weaving, solves the problem that conductive pins are not firmly connected with the sensor in a coating or sticking mode and are easy to drop, and can improve the durability of the piezoresistive flexible sensor. When the integral piezoresistive flexible sensor works, the chain electrode layer and the weft insertion electrode layer in a non-pressure state are in non-contact state, the whole circuit is in an open-circuit state, no energy consumption and no heat are generated in the state, the effects of saving energy and prolonging the service life of the piezoresistive flexible sensor are achieved, and the integral piezoresistive flexible sensor can be woven greatly and is applied to the scenes of large-area pressure changes such as mattresses, cushions and the like.
The foregoing is merely a preferred embodiment of the present application, and it should be noted that: it will be apparent to those skilled in the art that numerous modifications and variations can be made thereto without departing from the principles of the present application, and such modifications and variations are to be regarded as being within the scope of the application.
Claims (10)
1. An integrally formed piezoresistive flexible sensor, comprising:
a first surface layer including a first base layer and a chaining electrode layer interwoven with each other;
a second surface layer parallel to the first surface layer and including a second base layer and a weft-inserted electrode layer interwoven with each other; and
a piezoresistive layer located between the first skin layer and the second skin layer for connecting the first skin layer to the second skin layer;
wherein the first and second substrate layers are each comprised of a full-penetration warp-flat tissue; the braiding electrode layer is formed by a 5-through 5-empty braiding structure, or a combination of the braiding structure and a cushion-missing structure, or a combination of the braiding structure and a weft insertion structure; the weft insertion electrode layer is formed by 10-through 10-empty full-width weft insertion tissues; the piezoresistive layer is formed by full penetration 1-0-0-1// tissue or 5 empty 5 penetration (1-0-2-3/4-5-3-2) 5/(1-0-0-1) 10// tissue; the chaining electrode layer and the weft insertion electrode layer are woven by adopting conductive yarns.
2. The integrally formed piezoresistive flexible sensor according to claim 1, wherein the second skin layer further comprises:
the weft insertion electrode fixing layer is used for fixing the weft insertion electrode layer and is composed of 5-space 5-penetrating knitting chain tissues;
the 5-void 5-penetrating braid organization of the weft insertion electrode fixing layer is complementary with the 5-void 5-penetrating braid organization of the braid electrode layer.
3. The integrally formed piezoresistive flexible sensor according to claim 1, wherein the chaining electrode layer and the weft insertion electrode layer are provided with conductive yarns reserved during on-machine operation as lead pins, respectively.
4. The integrally formed piezoresistive flexible sensor according to claim 1, characterized in that both the chaining electrode layer and the weft insertion electrode layer are woven with 70-150D conductive yarns.
5. The integrally formed piezoresistive flexible sensor according to claim 1, characterized in that the first and the second substrate layers are woven with 70-150D polyester yarns.
6. The integrally formed piezoresistive flexible sensor according to claim 1, characterized in that said piezoresistive layer is woven with 30-50D nylon or polyester monofilament.
7. The integrally formed piezoresistive flexible sensor according to claim 2, wherein the weft inserted electrode fixing layer is woven with 70-150D polyester yarns.
8. The integrally formed piezoresistive flexible sensor according to any of claims 1-7, characterized in that the conductive yarns are made of a material comprising at least one or more of gold, silver, copper, stainless steel, graphene.
9. The integrally formed piezoresistive flexible sensor according to any of claims 1-7, characterized in that the thickness of the integrally formed piezoresistive flexible sensor is 2-7mm.
10. Use of an integrally formed piezoresistive flexible sensor according to claim 1 in the field of mattresses or cushions.
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