CN117604461A - Preparation method of epitaxial pleated film - Google Patents
Preparation method of epitaxial pleated film Download PDFInfo
- Publication number
- CN117604461A CN117604461A CN202311609358.XA CN202311609358A CN117604461A CN 117604461 A CN117604461 A CN 117604461A CN 202311609358 A CN202311609358 A CN 202311609358A CN 117604461 A CN117604461 A CN 117604461A
- Authority
- CN
- China
- Prior art keywords
- film
- substrate
- epitaxial
- pleated
- perovskite
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 61
- 239000004205 dimethyl polysiloxane Substances 0.000 claims abstract description 41
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims abstract description 41
- 239000005084 Strontium aluminate Substances 0.000 claims abstract description 33
- FNWBQFMGIFLWII-UHFFFAOYSA-N strontium aluminate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Sr+2].[Sr+2] FNWBQFMGIFLWII-UHFFFAOYSA-N 0.000 claims abstract description 33
- -1 polydimethylsiloxane Polymers 0.000 claims abstract description 31
- 239000012528 membrane Substances 0.000 claims abstract description 17
- 238000000151 deposition Methods 0.000 claims abstract description 11
- 238000006073 displacement reaction Methods 0.000 claims abstract description 4
- 235000013870 dimethyl polysiloxane Nutrition 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 32
- 229910052712 strontium Inorganic materials 0.000 claims description 27
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical group [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 27
- 239000013078 crystal Substances 0.000 claims description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 13
- 239000008367 deionised water Substances 0.000 claims description 12
- 229910021641 deionized water Inorganic materials 0.000 claims description 12
- 239000003795 chemical substances by application Substances 0.000 claims description 10
- 238000002791 soaking Methods 0.000 claims description 7
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 claims description 2
- 229940008099 dimethicone Drugs 0.000 claims 2
- 239000010408 film Substances 0.000 abstract description 81
- 239000010409 thin film Substances 0.000 abstract description 11
- 239000000463 material Substances 0.000 description 12
- 230000005684 electric field Effects 0.000 description 5
- 230000001276 controlling effect Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000001105 regulatory effect Effects 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000004549 pulsed laser deposition Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000877 morphologic effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0005—Separation of the coating from the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5873—Removal of material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/162—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using laser ablation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Optics & Photonics (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The application relates to the field of epitaxial pleated film preparation, and discloses a preparation method of an epitaxial pleated film, which comprises the following steps: s1, depositing a sacrificial layer strontium aluminate and a perovskite film on a monocrystalline substrate by using a pulse laser deposition method; s2, uniaxially stretching the polydimethylsiloxane substrate with the same thickness by 1.25% -6.25% by adopting the same displacement table; s3, placing the perovskite film on the monocrystalline substrate on the pre-stretched polydimethylsiloxane substrate, dissolving the sacrificial layer strontium aluminate between the perovskite film and the monocrystalline substrate, and removing the monocrystalline substrate after the strontium aluminate is completely dissolved; s4, slowly releasing the prestretched state of the polydimethylsiloxane substrate to obtain the perovskite pleated film. The epitaxial pleated membrane provided by the invention has controllable thickness, structure and strain gradient. By adjusting the growth conditions and parameters, the thin film can be precisely controlled, thereby meeting the requirements of different applications.
Description
Technical Field
The invention relates to the technical field of preparation of epitaxial pleated films, in particular to a preparation method of an epitaxial pleated film.
Background
The strain gradient effect is the coupling between the mechanical strain gradient and the electrical polarization, which is widely present in various dielectric materials. Due to the miniaturization of electronic devices and the use of nanotechnology, the size dependent strain gradient effect will play an increasingly important role. The flexural electric field caused by the strain gradient can be used for modifying and regulating the defect concentration and distribution, barrier height, photoelectric response and other physical properties of the material singly or in combination with other built-in electric field coupling, so that the application range and potential of the material are obviously influenced, and the flexural electric field is particularly used in a low-dimensional material system. The method provides a new degree of freedom for regulating and controlling the electronic correlation performance in the micro-nano field and researches the opposite direction.
In two-dimensional materials, the current mainstream means of introducing strain gradients is mainly to use strain relaxation phenomena and tip induction in epitaxial films. These methods can produce large strain gradients (typically at 10 6 -10 7 m -1 ) But also has high sensitivity, but there are some limitations. First, the strain gradient is highly localized; secondly, the film thickness is required; finally, the film is subject to the clamping action of rigid substrates, which is limited in the transfer, integration and flexible applications of many electronic devices. Recently, the advent of flexible self-supporting films has provided new ideas for the peeling of films from rigid substrates and transfer to flexible substrates to form self-supporting films. Which has advantages such as flexibility, transferability and transparency that are not possessed by other methods. However, this approach produces a smaller strain gradient (typically at 10) than methods that utilize strain relaxation in epitaxial films to introduce a strain gradient 4 m -1 Left and right), but also cannot lastThere is a limit to some extent to the application of the strain gradient effect in self-supporting films.
It is therefore necessary to find a method of preparing a strain gradient that can give a larger area, a larger thickness, and a greater response in the film without damage.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a preparation method of an epitaxial pleated film, which is simple to operate, and can obtain a strain gradient with larger area, larger thickness and larger response in a flexible self-supporting epitaxial perovskite film.
In order to achieve the above purpose, the invention is realized by the following technical scheme: a method of making an epitaxial pleated membrane comprising the steps of:
s1, depositing a sacrificial layer strontium aluminate and a perovskite film on a monocrystalline substrate by using a pulse laser deposition method;
s2, uniaxially stretching the polydimethylsiloxane substrate with the same thickness by 1.25% -6.25% by adopting the same displacement table;
s3, placing the perovskite film on the monocrystalline substrate on the pre-stretched polydimethylsiloxane substrate, dissolving the sacrificial layer strontium aluminate between the perovskite film and the monocrystalline substrate, and removing the monocrystalline substrate after the strontium aluminate is completely dissolved;
s4, slowly releasing the prestretched state of the polydimethylsiloxane substrate to obtain the perovskite pleated film.
Preferably, the single crystal substrate is a strontium titanate substrate, the growth temperature of the sacrificial layer strontium aluminate is 700-850 ℃, the high vacuum atmosphere is adopted, the cavity energy is 20-60mJ, and the frequency is 10Hz.
Preferably, the perovskite film is strontium ruthenate, the growth temperature of the strontium ruthenate is 650-750 ℃, the oxygen pressure is 50-100mTorr, the energy of the cavity is 90-120mJ, and the frequency is 10Hz.
Preferably, the polydimethylsiloxane substrate is prepared by completely mixing basic components and a curing agent according to a weight ratio of 10:1, and then standing at room temperature for 24 hours for curing.
Preferably, the basic components are dimethyl dioxysilane and methyl hydrogen group polydimethylsiloxane, and the curing agent is decahydro group dimethylpolysiloxane.
Preferably, the method for dissolving the sacrificial layer strontium aluminate between the perovskite film and the single crystal substrate comprises the following steps: soaking the film in deionized water for 30-60 min to dissolve the strontium aluminate completely.
Preferably, the thickness of the sacrificial layer strontium aluminate is 30nm, and the thickness of the perovskite thin film is 10-50nm.
Preferably, the thickness of the polydimethylsiloxane is 1mm, and the size of the single crystal substrate is 5mm×5mm.
The invention provides a preparation method of an epitaxial pleated film. The beneficial effects are as follows:
1. the epitaxial pleated membrane provided by the invention has controllable thickness, structure and strain gradient. By adjusting the growth conditions and parameters, the thin film can be precisely controlled, thereby meeting the requirements of different applications. This controllability enables the film to be tailored to various specific performance requirements.
2. The preparation method of the epitaxial pleated membrane provided by the invention is simple and convenient, and has lower cost. The method can directly prepare high-performance epitaxial pleated film on a stretchable substrate without complex process steps or expensive equipment. This reduces the complexity and cost of the manufacturing process and improves the production efficiency.
3. The epitaxial pleated film provided by the invention gets rid of the constraint of a rigid substrate, so that the epitaxial pleated film has excellent flexibility and stretchability. This makes the epitaxial pleated film of wide application potential in flexible electronics. For example, it can be applied to the fields of flexible displays, flexible sensors, wearable devices, etc., and new possibilities are provided for the development of these fields.
Drawings
FIG. 1 is a schematic illustration of the preparation process of a strontium ruthenate or polydimethylsiloxane pleated membrane of the present invention;
FIG. 2 is a topography of a strontium ruthenate pleated film under various pre-stretched conditions;
FIG. 3 is a graph of strain gradients in strontium ruthenate corrugated films under various pre-stretched conditions;
FIG. 4 is a graph of strain gradients in strontium ruthenate corrugated films under different pre-stretching conditions;
FIG. 5 is a graph of the morphology characterization of pleated films of varying strontium ruthenate thickness;
FIG. 6 is a graph of amplitude and wavelength for strontium ruthenate pleated films of varying thickness;
FIG. 7 is a graph of strain gradients in strontium ruthenate corrugated films of varying thicknesses.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 1-6, the present invention provides a method for preparing an epitaxial pleated film, comprising the following steps:
s1, depositing a sacrificial layer strontium aluminate and perovskite film on a monocrystalline substrate by using a pulse laser deposition method. The pulsed laser deposition method is a high temperature treatment method that forms uniform strontium aluminate and perovskite thin films on the surface of a single crystal substrate by exposing the material to a pulsed laser beam to rapidly heat and cool it.
And S2, uniaxially stretching the polydimethylsiloxane substrate by adopting the same displacement table. Such uniaxial stretching may be achieved by stretching means such that the polydimethylsiloxane substrate undergoes a controlled linear stretching deformation over a range of stretching ratios.
S3, placing the deposited perovskite film on a pre-stretched polydimethylsiloxane substrate, and dissolving the sacrificial layer strontium aluminate between the perovskite film and the monocrystalline substrate. The sacrificial layer strontium aluminate here acts as a soluble intermediate layer by which separation of the perovskite thin film from the single crystal substrate can be achieved.
S4, slowly releasing the pretensioned state of the polydimethylsiloxane substrate, so that the perovskite film is wrinkled and deformed. This is because the polydimethylsiloxane material has elastic recovery properties, and once the tensile force is lost, it rapidly returns to its original shape, causing wrinkling of the perovskite film, and can be applied to flexible electronic devices, sensing devices and wearable medical devices.
The preparation method of the epitaxial pleated membrane has some beneficial effects. First, a uniform perovskite thin film can be prepared on a single crystal substrate by a pulsed laser deposition method and the use of a sacrificial layer. Secondly, the morphology of the perovskite film can be regulated and controlled by uniaxial stretching and fold deformation of the polydimethylsiloxane, so that the film material with specific structure and performance is obtained. In addition, the method has the advantages of simple operation and low cost, and can be applied to mass production.
The single crystal substrate is a strontium titanate substrate.
The strontium titanate monocrystal substrate provides excellent crystal structure and lattice matching, and is favorable to the growth and quality improvement of film.
The growth temperature of the sacrificial layer strontium aluminate is 700-850 ℃, and the high-vacuum atmosphere is favorable for promoting the crystal growth and the improvement of the crystal quality of the film. The energy of the cavity is 20-60mJ, the frequency is 10Hz, and the parameters control the intensity and the frequency of the laser so as to realize the accurate control of the film growth process. The higher energy and frequency of the cavitation can provide sufficient energy and speed to allow uniform growth of the thin film on the single crystal substrate.
The perovskite film is strontium ruthenate, which is a perovskite structure material and has excellent photoelectric properties.
The growth temperature of strontium ruthenate is 650-750 ℃ and the oxygen pressure is 50-100mTorr.
These parameters control the temperature and atmosphere during deposition and have a significant impact on the crystal structure and properties of the thin film. Appropriate growth temperature and oxygen pressure can promote crystal growth and lattice matching of the perovskite thin film.
The energy of the cavity is 90-120mJ, and the frequency is 10Hz.
These parameters control the intensity and frequency of the laser to achieve precise control of the film growth process. The appropriate cavitation energy and frequency can provide sufficient energy and velocity to allow uniform growth of the thin film on the single crystal substrate.
The polydimethylsiloxane substrate is prepared by completely mixing basic components and a curing agent according to the weight ratio of 10:1, and then standing for 24 hours at room temperature for curing.
The basic components are dimethyl dioxy silane and methyl hydrogen group polydimethyl siloxane, and the curing agent is decahydrogen group dimethylpolysiloxane.
The preparation method of the Polydimethylsiloxane (PDMS) substrate is as follows:
preparing basic components and a curing agent: dimethyl dioxy silane and methyl hydrogen polydimethyl siloxane are used as basic components of PDMS, and decahydro dimethylpolysiloxane is used as a curing agent. The essential components and curing agent were thoroughly mixed in a weight ratio of 10:1.
Mixing evenly: the essential components and curing agent are thoroughly mixed using a stirrer or other suitable method to ensure that they are uniformly dispersed throughout the mixture.
Standing and solidifying: the mixed PDMS solution was left to stand at room temperature for 24 hours. During this time, the PDMS will undergo a curing reaction, forming a PDMS substrate with some mechanical strength and flexibility.
And (3) curing is completed: after standing and solidifying for 24 hours, the PDMS substrate can be prepared. It can be removed and subjected to subsequent processing and application.
The method for dissolving the sacrificial layer strontium aluminate between the perovskite film and the single crystal substrate comprises the following steps: soaking the film in deionized water for 30-60 min to dissolve the strontium aluminate completely.
The method for dissolving the sacrificial layer strontium aluminate between the perovskite thin film and the single crystal substrate is as follows:
deionized water is prepared: ensuring that the dissolution process is performed using pure deionized water. Deionized water may be prepared using deionized water equipment common to laboratories or other suitable methods.
Soaking the film: the perovskite film containing the sacrificial layer strontium aluminate is put into deionized water to be fully soaked. The soaking time is generally 30-60 minutes, and can be adjusted according to specific conditions.
Dissolving the sacrificial layer: during the soaking process, the strontium aluminate of the sacrificial layer gradually dissolves in the deionized water. By contact with water, the strontium aluminate gradually dissolves and is released from the surface of the film.
Cleaning and treating: after dissolution is completed, the film is removed and rinsed thoroughly with deionized water to ensure complete removal of the remaining sacrificial layer. Subsequently, further processing or application may take place.
The thickness of the sacrificial layer strontium aluminate is 30nm, and the thickness of the perovskite film is 10-50nm.
The thickness of the polydimethylsiloxane was 1mm, and the size of the single crystal substrate was 5mm×5mm.
Embodiment one:
s1, depositing a sacrificial layer of strontium aluminate with the thickness of 30nm and a perovskite film of strontium ruthenate with the thickness of 10-50nm on a strontium titanate single crystal substrate by utilizing pulse laser deposition;
s2, absorbing the perovskite film on the monocrystalline substrate on the pre-stretched polydimethylsiloxane substrate, and dissolving out the sacrificial layer strontium aluminate by using deionized water;
s3, soaking the strontium aluminate in deionized water for 30-60 minutes, completely dissolving the strontium aluminate, and removing the monocrystalline substrate;
s4, slowly releasing the polydimethylsiloxane pre-stretching state to obtain the strontium ruthenate pleated film.
Wherein fig. 2 is a morphological characterization of strontium ruthenate pleated films at different pre-stretched states. In the figure, the thickness of all strontium ruthenate fold films is consistent, and 1.25% -6.25% of polydimethylsiloxane is prestretched to obtain the strontium ruthenate fold films respectively. The surface of the pleated membrane is clean, and the morphology of the pleats is complete.
Fig. 3 shows the amplitude and wavelength of strontium ruthenate pleated films in various pre-stretched states. The increasing amplitude of the pleated membrane has a substantially constant wavelength as the pretension increases. This is in accordance with the wavelength and amplitude formulas of the buckling waveform.
Fig. 4 shows the strain gradient in a strontium ruthenate corrugated film in various pre-stretched states. As the prestretching increases, the strain gradient in the pleated film increases with it, up to 3.9X10 5 m -1 . This is because the strain gradient increases with the increase in the deformation amount in the elastic deformation range of the film.
A structurally controllable epitaxial pleated film can be prepared by controlling the degree of pretensioning in example 1. The wavelength, amplitude and strain gradient can be precisely controlled.
Embodiment two:
the same procedure as in example 1 was followed, wherein FIG. 5 is a topographical representation of pleated films of different strontium ruthenate thicknesses. In the figure, the prestretching degree of all the strontium ruthenate fold films is consistent, and the strontium ruthenate fold films obtained by respectively transferring the strontium ruthenate fold films with the thickness of 10-50nm. The surface of the pleated membrane is clean, the morphology of the pleats is complete, and the waveform is obviously changed along with the thickness change.
FIG. 6 shows the amplitude and wavelength of strontium ruthenate pleated films of varying thickness. As the thickness increases, the amplitude and wavelength of the pleated membrane increases significantly.
Fig. 7 shows the strain gradients in strontium ruthenate corrugated films of different thicknesses. As the thickness increases, the strain gradient in the folds gradually decreases, and the maximum can reach 9.6X10 5 m -1 。
In example 2, a structurally controllable epitaxial pleated film can be prepared by controlling the thickness of the pleated film. The wavelength, amplitude and strain gradient can be precisely controlled.
The flexural electric field caused by the strain gradient can modify and regulate the defect concentration and distribution, barrier height, and photoelectric response of the material, alone or in combination with other built-in electric field coupling, thereby significantly affecting the photoelectromagnetic properties of the material, especially in low dimensional material systems. The method provides a new degree of freedom and research direction for regulating and controlling the related performance of the light and the electromagnetism in the micro-nano field.
In further embodiments of the invention, the thickness of the polydimethylsiloxane film may be selected from 0.5-2mm, the amount of stretching may be selected from 1.25-6.25%, the thickness of the strontium ruthenate film used may be selected from 10-50nm, and the perovskite film used may be selected from strontium titanate (SrT i O) 3 ) Barium titanate (BaT i O) 3 ) Bismuth ferrite (BIFeO) 3 ) And materials having a perovskite structure.
Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (8)
1. A method of preparing an epitaxial pleated membrane comprising the steps of:
s1, depositing a sacrificial layer strontium aluminate and a perovskite film on a monocrystalline substrate by using a pulse laser deposition method;
s2, uniaxially stretching the polydimethylsiloxane substrate with the same thickness by 1.25% -6.25% by adopting the same displacement table;
s3, placing the perovskite film on the monocrystalline substrate on the pre-stretched polydimethylsiloxane substrate, dissolving the sacrificial layer strontium aluminate between the perovskite film and the monocrystalline substrate, and removing the monocrystalline substrate after the strontium aluminate is completely dissolved;
s4, slowly releasing the prestretched state of the polydimethylsiloxane substrate to obtain the perovskite pleated film.
2. The method for preparing an epitaxial pleated film according to claim 1, wherein the single crystal substrate is a strontium titanate substrate, the growth temperature of the sacrificial layer strontium aluminate is 700-850 ℃, the energy of the cavity is 20-60mJ, and the frequency is 10Hz.
3. The method for preparing an epitaxial pleated membrane according to claim 1, wherein the perovskite membrane is strontium ruthenate, the growth temperature of the strontium ruthenate is 650-750 ℃, the oxygen pressure is 50-100mTorr, the energy of the cavity is 90-120mJ, and the frequency is 10Hz.
4. The method for preparing an epitaxial pleated film according to claim 1, wherein the polydimethylsiloxane substrate is prepared by completely mixing basic components and a curing agent in a weight ratio of 10:1, and then standing at room temperature for 24 hours for curing.
5. The method of preparing an epitaxial pleated membrane according to claim 4, wherein the basic components are dimethyl dioxysilane and methylhydro dimethicone, and the curing agent is decahydro dimethicone.
6. The method of preparing an epitaxial pleated membrane according to claim 1, wherein the method of dissolving the sacrificial layer strontium aluminate between the perovskite membrane and the single crystal substrate comprises: soaking the film in deionized water for 30-60 min to dissolve the strontium aluminate completely.
7. The method of claim 1, wherein the thickness of the sacrificial strontium aluminate layer is 30nm and the thickness of the perovskite film layer is 10-50nm.
8. A method of preparing an epitaxial pleated membrane according to claim 1, wherein the polydimethylsiloxane has a thickness of 1mm and the single crystal substrate has dimensions of 5mm x 5mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311609358.XA CN117604461A (en) | 2023-11-29 | 2023-11-29 | Preparation method of epitaxial pleated film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311609358.XA CN117604461A (en) | 2023-11-29 | 2023-11-29 | Preparation method of epitaxial pleated film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117604461A true CN117604461A (en) | 2024-02-27 |
Family
ID=89949419
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311609358.XA Pending CN117604461A (en) | 2023-11-29 | 2023-11-29 | Preparation method of epitaxial pleated film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117604461A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114351090A (en) * | 2021-11-23 | 2022-04-15 | 中国科学院宁波材料技术与工程研究所 | Method for preparing flexible film with adjustable fold structure under high temperature condition and application thereof |
| CN115623851A (en) * | 2022-10-28 | 2023-01-17 | 哈尔滨工业大学（深圳） | Flexible bendable piezoelectric oxide film and preparation method and application thereof |
| CN115714035A (en) * | 2022-11-24 | 2023-02-24 | 深圳先进技术研究院 | Flexible self-supporting ferroelectric film and preparation method thereof |
-
2023
- 2023-11-29 CN CN202311609358.XA patent/CN117604461A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114351090A (en) * | 2021-11-23 | 2022-04-15 | 中国科学院宁波材料技术与工程研究所 | Method for preparing flexible film with adjustable fold structure under high temperature condition and application thereof |
| CN115623851A (en) * | 2022-10-28 | 2023-01-17 | 哈尔滨工业大学（深圳） | Flexible bendable piezoelectric oxide film and preparation method and application thereof |
| CN115714035A (en) * | 2022-11-24 | 2023-02-24 | 深圳先进技术研究院 | Flexible self-supporting ferroelectric film and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108424543B (en) | Preparation method of light transmittance adjustable force response type surface wrinkles | |
| CN111137847B (en) | Preparation method of flexible functional oxide film with adjustable buckling micro-nano structure | |
| US20180026214A1 (en) | Carbon nanotube thin film transistor and manufacturing method thereof | |
| CN102491254A (en) | Method for wrinkling polydimethylsiloxane (PDMS) elastomer in selective area | |
| CN108102121B (en) | Anisotropic magnetic polymer composite film material and preparation method thereof | |
| Yang et al. | Flexible PbTiO3-nanowires/P (VDF-TrFE) composite films and their dielectric, ferroelectric and pyroelectric properties | |
| CN107585762A (en) | A kind of modification method of copper foil substrate graphene transfer | |
| CN113594357A (en) | ABO3Flexible stretchable single crystal film and preparation method thereof | |
| CN112697034A (en) | Flexible strain sensor made of graphene composite material and preparation method of flexible strain sensor | |
| CN117604461A (en) | Preparation method of epitaxial pleated film | |
| WO2020202006A1 (en) | Lead-free piezo composites and methods of making thereof | |
| CN107986224A (en) | Large area multilevel surface folding structure and its preparation | |
| CN108516541B (en) | CVD graphene dry transfer method | |
| CN109971021B (en) | Folded graphene oxide/latex flexible film and preparation and application thereof | |
| CN108455579A (en) | A method of single-layer graphene is shifted based on degradable polymer | |
| CN102001622B (en) | Method for preparing air bridge type nano device | |
| Oh et al. | Fabrication of 1㎛ Thickness Lead Zirconium Titanate Films Using Poly (N-vinylpyrrolidone) Added Sol-gel Method | |
| CN116623152A (en) | Two-dimensional CrS nano-sheet and preparation method and application thereof | |
| CN114015225A (en) | Magnetic-drive shape memory material and preparation method and application thereof | |
| CN114351090A (en) | Method for preparing flexible film with adjustable fold structure under high temperature condition and application thereof | |
| CN113990846A (en) | SOI device capable of resisting total dose irradiation and preparation method thereof | |
| CN107043471B (en) | Method for preparing polymer multilevel pattern through ultrasonic-assisted treatment | |
| CN111441080B (en) | In2Te5Single crystal and method for producing the same | |
| KR101867873B1 (en) | Method for preparing organic semiconductor thin film and method for fabricating organic field-effect transistor comprising the same | |
| CN115340693B (en) | Preparation method of controllable patterning PDMS template |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |