CN117595062A - Vertical cavity surface emitting laser array structure - Google Patents
Vertical cavity surface emitting laser array structure Download PDFInfo
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- CN117595062A CN117595062A CN202311373320.7A CN202311373320A CN117595062A CN 117595062 A CN117595062 A CN 117595062A CN 202311373320 A CN202311373320 A CN 202311373320A CN 117595062 A CN117595062 A CN 117595062A
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- 239000002184 metal Substances 0.000 claims abstract description 56
- 230000003287 optical effect Effects 0.000 claims abstract description 54
- 238000002955 isolation Methods 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 230000001788 irregular Effects 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 description 8
- 238000007254 oxidation reaction Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02315—Support members, e.g. bases or carriers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/0232—Lead-frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/02345—Wire-bonding
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention provides a vertical cavity surface emitting laser array structure, comprising: the substrate, the first ohmic metal layer, the first electrode, the first reflecting layer, the active layer, the oxide layer, the second reflecting layer, the second ohmic metal layer and the second electrode are sequentially stacked; the first ohmic metal layer comprises a plurality of connecting parts and extending parts, and the connecting parts and the extending parts are of an integrated structure; the extension parts extend and are distributed along the first direction and/or the second direction; in the light emitting region, the outermost optical aperture is adjacent to at least one of the extensions. The invention provides a vertical cavity surface emitting laser array structure, which improves the ohmic contact area near the isolation groove position, improves the carrier concentration and further improves the luminous power of the optical aperture.
Description
Technical Field
The embodiment of the invention relates to the technical field of vertical cavity surface emitting lasers, in particular to a vertical cavity surface emitting laser array structure.
Background
With the continuous development of science and technology, vertical-Cavity Surface Emitting lasers (VCSELs) have been widely used by people, and various VCSEL chips have been widely used in daily life, work and industry of people, thereby bringing great convenience to the life of people.
For the vertical cavity surface emitting laser array with multiple light emitting areas, as the substrate is provided with the isolation grooves for isolating the channels between the areas, under the requirement of small size, the light emitting structures are not placed in enough space at the positions close to the isolation grooves in the light emitting areas, so that the ohmic contact area close to the isolation grooves is insufficient, and the light emitting power in the light emitting areas with the isolation grooves is reduced.
Disclosure of Invention
The invention provides a vertical cavity surface emitting laser array structure, which improves the ohmic contact area near the isolation groove position, improves the carrier concentration and further improves the luminous power of the optical aperture.
The embodiment of the invention provides a vertical cavity surface emitting laser array structure, which comprises the following components: the substrate, the first ohmic metal layer, the first electrode, the first reflecting layer, the active layer, the oxide layer, the second reflecting layer, the second ohmic metal layer and the second electrode are sequentially stacked;
a plurality of light-emitting areas are divided on the substrate through isolation trenches; the first ohmic metal layer comprises a plurality of connecting parts and extending parts, and the connecting parts and the extending parts are of an integrated structure; in the light-emitting area, the vertical projection of the first electrode on the first ohmic metal layer has an overlapping position with the connecting part; a first through hole is arranged at the overlapped position, and the first electrode is electrically connected with the connecting part through the first through hole;
a plurality of optical apertures are arranged on one side of the second reflecting layer away from the substrate; the second electrode is arranged in a region outside the optical aperture; the second electrode is electrically connected with the second ohmic metal layer through a second through hole;
the first electrodes are distributed along a first direction in an extending way, the second electrodes are distributed along a second direction in an extending way, and the extending parts are distributed along the first direction and/or the second direction in an extending way; in the light emitting region, the outermost optical aperture is adjacent to at least one of the extensions, wherein a perpendicular projection of the optical aperture onto the substrate does not overlap with a perpendicular projection of the first ohmic metal layer onto the substrate and a perpendicular projection of the first electrode onto the substrate, and the first direction intersects the second direction.
Optionally, the connection portions adjacent to the outermost optical aperture are connected to each other by the extension portion.
Optionally, the connection portions between adjacent first through holes are connected to each other by the extension portion.
Optionally, the extension part is a strip-shaped metal layer.
Optionally, the arrangement mode of the optical apertures in the light-emitting area includes equidistant arrangement and non-equidistant arrangement.
Optionally, the surrounding pattern of the isolation trench is a regular pattern or an irregular pattern.
Optionally, the electrode assembly comprises a plurality of first electrodes and a plurality of second electrodes, wherein the first electrodes are arranged along a second direction; the plurality of second electrodes are arranged along a first direction.
Optionally, the isolation trench is not provided on the substrate between the second electrodes adjacent in the first direction.
Optionally, the light emitting aperture of the inner periphery of the light emitting region is equal to the distance between the adjacent isolation trenches along the first direction or the second direction.
Optionally, the optical apertures in the light emitting region are the same size.
The embodiment of the invention provides a vertical cavity surface emitting laser array structure, which is characterized in that an extension part is formed by extending outwards from a connecting part along a first direction X and/or a second direction Y, and the outermost optical aperture is adjacent to one extension part, so that the conductive area from a first electrode to a first ohmic metal layer is increased. After the current passes through the oxidation hole from the second electrode through the second ohmic metal layer, the impedance of the extension part is small, so that the current more uniformly passes along the extension part and flows to the ground from the first through hole and the first electrode, the ohmic contact area close to the isolation groove is increased by utilizing the extension part, the carrier concentration is increased, and the luminous power of the peripheral optical aperture is further increased.
Drawings
Fig. 1 is a schematic top view of a vertical cavity surface emitting laser array structure according to an embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view of the AA' part of FIG. 1;
FIG. 3 is a schematic cross-sectional view of the BB' part of FIG. 1;
FIG. 4 is a schematic diagram showing the direction of current flow from the second electrode to the first ohmic metal layer according to the prior art;
FIG. 5 is a schematic diagram illustrating a direction of a current flowing from a second electrode to a first ohmic metal layer according to an embodiment of the present invention;
FIG. 6 is a schematic top view of another VCSEL array structure according to an embodiment of the present invention;
FIG. 7 is a schematic top view of another VCSEL array structure according to an embodiment of the present invention;
FIG. 8 is a schematic view illustrating a direction of a current from a second electrode to a first ohmic metal layer according to an embodiment of the present invention;
fig. 9 is a schematic top view of another vertical cavity surface emitting laser array structure according to an embodiment of the present invention.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
For the vertical cavity surface emitting laser array with multiple light emitting areas, the isolation trenches are needed to isolate the channels between the areas, so that under the requirement of small size, the light emitting structures such as an ohmic metal layer, an electrode, a connecting through hole and the like are not placed in the light emitting area close to the isolation trenches in enough space, the ohmic contact area close to the isolation trenches is insufficient, and the light emitting power in the light emitting area with the isolation trenches is reduced.
In view of this, fig. 1 is a schematic top view of a vertical cavity surface emitting laser array structure according to an embodiment of the present invention, fig. 2 is a schematic cross-sectional structure of an AA 'part of fig. 1, and fig. 3 is a schematic cross-sectional structure of a BB' part of fig. 1, see fig. 1 and 3, including: a substrate 1, a first ohmic metal layer 2, a first electrode 110, a first reflective layer 3, an active layer 4, an oxide layer 5, a second reflective layer 6, a second ohmic metal layer 7, and a second electrode 120, which are sequentially stacked;
a plurality of light emitting regions are partitioned on the substrate 1 by the isolation trenches 130; the first ohmic metal layer 2 includes a plurality of connection portions 201 and extension portions 202, the connection portions 201 and the extension portions 202 being of an integral structure; in the light emitting region, the vertical projection of the first electrode 110 on the first ohmic metal layer 2 has an overlapping position with the connection portion 201; a first through hole 150 is provided at the overlapping position, and the first electrode 110 is electrically connected to the connection part 201 through the first through hole 150;
the side of the second reflective layer remote from the substrate 1 is provided with a plurality of optical apertures 140; the second electrode 120 is disposed in a region outside the optical aperture 140; the second electrode 120 is electrically connected to the second ohmic metal layer 2 through a second via hole;
the first electrodes 110 are extended and distributed along the first direction X, the second electrodes 120 are extended and distributed along the second direction Y, and the extending portions 202 are extended and distributed along the first direction X and/or the second direction Y; in the light emitting region, the outermost optical aperture 140 is adjacent to at least one extension 202, wherein the perpendicular projection of the optical aperture 140 onto the substrate 1 does not overlap with the perpendicular projection of the first ohmic metal layer 2 onto the substrate 1 and the perpendicular projection of the first electrode 110 onto the substrate 1, and the first direction X intersects the second direction Y.
Specifically, the vertical cavity surface emitting laser array structure includes a substrate 1, a first ohmic metal layer 2, a first electrode 110, a first reflective layer 3, an active layer 4, an oxide layer 5, a second reflective layer 6, a second ohmic metal layer 7 and a second electrode 120 which are sequentially stacked, and in order to improve insulation and resistance to water oxygen, a passivation layer 11 is added between the first ohmic metal layer 2 and the first electrode 110 and between the second reflective layer 6 and the second ohmic metal layer 7. By providing the isolation trench 130 on the substrate 1, each light emitting region is defined using the isolation trench 130 as an isolation boundary. In the light-emitting area, a plurality of independent optical apertures 140 are disposed on the side of the second ohmic metal layer 7 away from the substrate 1, and the optical apertures 140 are exemplarily distributed in the light-emitting area and may be arranged at equal intervals to ensure the uniformity of surface light emission. The oxidation holes extending from the second reflecting layer 6 to the active layer 4 are arranged below the optical apertures 140, and the relative positions of the optical apertures 140 and the oxidation holes are the same, so that the optical apertures 140 and the oxidation holes are uniformly processed in the preparation process, and the process difficulty is reduced.
Typically the first reflective layer 3 and the second reflective layer 6 are doped with n-type material and p-type material or with p-type material and n-type material, and in order to inject carriers into the active layer 4, electrical contact regions are applied to the n-doped side and the p-doped side of the pin junction. The ohmic metal layer is formed by depositing conductive materials at different heights in the layer structure, wherein the first ohmic metal layer 2 comprises a connection portion 201, a vertical projection of the first electrode 110 on the first ohmic metal layer 2 and the connection portion 201 have an overlapping position, a first through hole 150 is arranged at the overlapping position, the conductive materials are filled in the first through hole 150, and the first electrode 110 is electrically connected with the connection portion 201 through the first through hole 150. The connection portion 201 may be circular in shape and have a size at least greater than that of the first via hole 150, and an area outside the optical aperture 140 covers the second electrode 120, and the second electrode 120 is electrically connected to the second ohmic metal layer 7 through the second via hole.
With continued reference to fig. 1, in the vertical cavity surface emitting laser array structure, the first electrodes 110 are extended and distributed along the first direction X, and the second electrodes 120 are extended and distributed along the second direction Y, and illustratively, the first electrodes 110 may extend in the first direction X as bar electrodes with regular or irregular shapes, the second electrodes 120 may extend in the second direction Y as bar electrodes with regular or irregular shapes, where the first direction X intersects the second direction Y, and the included angle between the first direction X and the second direction Y may be selected according to the distribution of the optical apertures 140, and the design requirements of the vertical cavity surface emitting laser array structure. For ease of understanding, the first direction X is perpendicular to the second direction Y in the exemplary embodiment of the present invention. Fig. 4 is a schematic diagram illustrating a direction of current flowing from the second electrode 120 to the first ohmic metal layer in the prior art, in which the optical aperture 140 is generally arranged around the first through hole 150, so that current flows from the second electrode 120 to the ground via the second ohmic metal layer through the oxidized hole, the first ohmic metal layer 2, the first through hole 150, and the first electrode 110, and light emission of the optical aperture 140 is achieved, and when the optical aperture 140 is arranged near the isolation trench 130, since there is insufficient space for placing light emission structures such as the first ohmic metal layer 2, the first electrode 110, and the first through hole 150, the ohmic contact area of the optical aperture 140 near the isolation trench 130 corresponding to the oxidized hole is insufficient, and the concentration of carriers is low, so that the light emission power is reduced. Therefore, the first ohmic metal layer 2 further includes an extension 202, where the extension 202 and the connection 201 are of the same layer and integrated metal layer structure, and the extension 202 extends outward from the connection 201 along the first direction X and/or the second direction Y, and the outermost optical aperture 140 is adjacent to one extension 202, so as to increase the conductive area from the second electrode 120 to the first ohmic metal layer 2. Taking the first direction X and the second direction Y as an example, the extension 202 extends outward from the connection 201 along the first direction X and/or the second direction Y, so that the first electrode 110 and the extension 202 form a cross-shaped intersection, the optical apertures 140 are disposed in the area divided by the cross-shaped intersection based on the connection 201, and the optical apertures 140 in the light emitting area form a matrix arrangement. In the outermost optical apertures 140, there is an extension 202 between adjacent optical apertures 140, so as to increase the conductive area from the second electrode 120 of the outermost optical aperture 140 to the first ohmic metal layer 2. Fig. 5 is a schematic diagram of a direction of a current from a second electrode to a first ohmic metal layer according to an embodiment of the present invention, referring to fig. 5, after the current passes through an oxidation hole from a second electrode 120 through the second ohmic metal layer, the current passes along the extension 202 more uniformly due to the small impedance of the extension 202, and then flows from the first through hole 150 and the first electrode 110 to the ground, thereby increasing the ohmic contact area near the isolation trench 130 by using the extension 202, increasing the carrier concentration and further increasing the light emitting power of the optical aperture 140.
The embodiment of the invention provides a vertical cavity surface emitting laser array structure, which is characterized in that an extension part is formed by extending outwards from a connecting part along a first direction X and/or a second direction Y, and the outermost optical aperture is adjacent to one extension part, so that the conductive area from a first electrode to a first ohmic metal layer is increased. After the current passes through the oxidation hole from the second electrode through the second ohmic metal layer, the impedance of the extension part is small, so that the current more uniformly passes along the extension part and flows to the ground from the first through hole and the first electrode, the ohmic contact area close to the isolation groove is increased by utilizing the extension part, the carrier concentration is increased, and the luminous power of the peripheral optical aperture is further increased.
Optionally, the embodiment of fig. 6 further provides a schematic top view of another vertical cavity surface emitting laser array structure, referring to fig. 6, the connection portions 201 adjacent to the outermost optical aperture 140 are connected to each other by extension portions 202. That is, the outermost connecting portions 201 are connected to each other by the extending portions 202, and the connecting portions 201 are connected in a ring shape, so that a conductive area between the outermost connecting portions 201 of the optical aperture 140 is increased, and the carrier concentration is further improved, so that the luminous power of the outer optical aperture 140 is improved.
Optionally, the embodiment of fig. 7 further provides a schematic top view of another vertical cavity surface emitting laser array structure, referring to fig. 7, the connection portion 201 between the adjacent first through holes 150 is connected to each other by an extension portion 202. That is, the connection portions 201 inside the light emitting region are connected to each other through the extension portions 202, so that the conductive area between the connection portions 201 of the optical aperture 140 in the light emitting region is increased, the carrier concentration is further increased, and the light emitting power of the light emitting region is further increased.
Based on the above embodiment, fig. 8 is a schematic diagram of the direction of the current from the second electrode 120 to the first ohmic metal layer according to the embodiment of the present invention, referring to fig. 8, after the current passes through the oxidation hole from the second electrode 120 through the second ohmic metal layer, the current passes through the surrounding extension 202 more uniformly due to the small impedance of the extension 202, and then flows from the first through hole 150 and the first electrode 110 to the ground, so that the ohmic contact area near the isolation trench 130 is increased by using the extension 202, and the carrier concentration is increased, thereby increasing the light emitting power of the optical aperture 140.
Optionally, the extension 202 is a strip-shaped metal layer. The extension 202 extends outwards from the connection 201 along the first direction X and/or the second direction Y, and the outermost optical aperture 140 is adjacent to the extension 202, so as to increase the conductive area from the second electrode 120 to the first ohmic metal layer 2, and the extension 202 adopts a strip-shaped metal layer, so that the processing area of the extension 202 is reduced, and the extension 202 can be arranged in the space between the adjacent isolation trenches 130. In the light emitting process, after the current passes through the oxidation hole from the second electrode 120 through the second ohmic metal layer, the current passes along the extension portion 202 more uniformly due to the small impedance of the extension portion 202, and then flows to the ground from the first through hole 150 and the first electrode 110, so that the ohmic contact area near the isolation trench 130 is increased by using the extension portion 202, the carrier concentration is increased, and the light emitting power of the optical aperture 140 is further increased.
Optionally, the first electrode 110 is a strip electrode. Specifically, the first electrode 110 may be a plurality of strip electrodes, so that the plurality of strip electrodes are arranged in parallel along the first direction X, and meanwhile, the first electrode 110 may further include an electrode pad 111, where the electrode pad 111 and the strip electrode are integrally configured, and the electrode pad 111 plays a role in signal extraction, and is connected to an external circuit, so as to facilitate array control.
Illustratively, a plurality of first electrodes 110 and a plurality of second electrodes 120, the plurality of first electrodes 110 being arranged along the second direction Y; the plurality of second electrodes 120 are arranged along the first direction X.
The first electrode 110 may extend in the first direction X as a stripe electrode, the second electrode 120 may extend in the second direction Y as a stripe electrode, the plurality of first electrodes 110 may be sequentially arranged in the second direction Y, and the plurality of second electrodes 120 may be sequentially arranged in the first direction X. The partition-controlled light emitting regions such as light emitting region a, light emitting region B, light emitting region C, light emitting region D, and the like in fig. 1 are obtained in combination with the boundaries of the isolation trench 130.
Optionally, fig. 9 further provides a schematic top view of another vertical cavity surface emitting laser array structure according to the embodiment of the present invention, and referring to fig. 9, the optical apertures 140 are arranged in the light emitting area in a manner including equidistant arrangement and non-equidistant arrangement. Specifically, according to the angle setting between the first direction X and the second direction Y and the shape design of the extension portion 202, the optical apertures 140 may be arranged in various manners in the light emitting area, where the equidistant arrangement includes square arrays, rectangular arrays, and the optical apertures 140 in the first direction X or the second direction Y are staggered, and the non-equidistant arrangement may include an irregular arrangement manner obtained randomly according to the light emitting requirement and an arrangement manner periodically changed along a certain direction pitch, so as to meet the design requirement of different light emitting powers.
Optionally, the shape of the surrounding isolation trench 130 may be a regular shape such as a rectangle, a circle, a triangle, a parallelogram, or a regular polygon, or may be adjusted according to the light emitting aperture and the semiconductor layout structure to obtain an irregular pattern, so as to reduce the size between the light emitting regions.
Alternatively, the isolation trench 130 is not provided on the substrate 11 between the second electrodes 120 adjacent in the first direction X. Specifically, the isolation trench 130 between two adjacent second electrodes 120, i.e., the isolation trench 130 at the dashed box mark, may be omitted, only by the second electrode 120 as a division of the adjacent light emitting region. For example, in fig. 1, when the first electrode 110 is energized and the first second electrode 120 is energized, the first light-emitting region may emit light, and the second light-emitting region may not emit light due to the separation of the adjacent second electrodes 120, and may also serve as a light-emitting region separation.
Optionally, the distances between the peripheral light emitting apertures in the light emitting region and the adjacent isolation trenches 130 along the first direction X or the second direction Y are equal, the light emitting apertures are uniformly arranged in the light emitting region, such as a matrix arrangement, an equidistant arrangement, etc., and the distances between the center of the peripheral light emitting apertures in one light emitting region and the adjacent isolation trenches 130 along the first direction X or the second direction Y are equal, so as to improve the light emitting uniformity of the edges of the light emitting region. Optionally, the optical apertures 140 in the light emitting region have the same size, so that the uniformity of light emission is improved, the uniformity of the manufacturing process is ensured, and the manufacturing difficulty of the process is reduced to a certain extent.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and are not limiting; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. A vertical cavity surface emitting laser array structure comprising: the substrate, the first ohmic metal layer, the first electrode, the first reflecting layer, the active layer, the oxide layer, the second reflecting layer, the second ohmic metal layer and the second electrode are sequentially stacked;
a plurality of light-emitting areas are divided on the substrate through isolation trenches; the first ohmic metal layer comprises a plurality of connecting parts and extending parts, and the connecting parts and the extending parts are of an integrated structure; in the light-emitting area, the vertical projection of the first electrode on the first ohmic metal layer has an overlapping position with the connecting part; a first through hole is arranged at the overlapped position, and the first electrode is electrically connected with the connecting part through the first through hole;
a plurality of optical apertures are arranged on one side of the second reflecting layer away from the substrate; the second electrode is arranged in a region outside the optical aperture; the second electrode is electrically connected with the second ohmic metal layer through a second through hole;
the first electrodes are distributed along a first direction in an extending way, the second electrodes are distributed along a second direction in an extending way, and the extending parts are distributed along the first direction and/or the second direction in an extending way; in the light emitting region, the outermost optical aperture is adjacent to at least one of the extensions, wherein a perpendicular projection of the optical aperture onto the substrate does not overlap with a perpendicular projection of the first ohmic metal layer onto the substrate and a perpendicular projection of the first electrode onto the substrate, and the first direction intersects the second direction.
2. The vcsel array structure in accordance with claim 1, wherein the connections adjacent to the outermost optical apertures are connected to each other by the extensions.
3. The vcsel array structure as claimed in claim 1, wherein the connection portions between adjacent ones of the first through holes are connected to each other by the extension portions.
4. The vcsel array structure of claim 1, wherein the extensions are strip-shaped metal layers.
5. The vcsel array structure in accordance with claim 1, wherein the arrangement of optical apertures in the light emitting region includes equidistant and non-equidistant arrangements.
6. The vcsel array structure as claimed in any one of claims 1 to 5, wherein the enclosed pattern of isolation trenches is a regular pattern or an irregular pattern.
7. The vcsel array structure in accordance with claim 6, comprising a plurality of the first electrodes and a plurality of the second electrodes, the plurality of first electrodes being arranged in a second direction; the plurality of second electrodes are arranged along a first direction.
8. The vcsel array structure in accordance with claim 7, wherein the isolation trenches are not provided on the substrate between the second electrodes adjacent in a first direction.
9. The vcsel array structure in accordance with claim 6, wherein the light emitting apertures in the inner periphery of the light emitting region are equidistant from adjacent isolation trenches in either the first direction or the second direction.
10. The vcsel array structure in accordance with claim 1, wherein the optical apertures in the light emitting region are the same size.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311373320.7A CN117595062A (en) | 2023-10-20 | 2023-10-20 | Vertical cavity surface emitting laser array structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311373320.7A CN117595062A (en) | 2023-10-20 | 2023-10-20 | Vertical cavity surface emitting laser array structure |
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| Publication Number | Publication Date |
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| CN117595062A true CN117595062A (en) | 2024-02-23 |
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| CN202311373320.7A Pending CN117595062A (en) | 2023-10-20 | 2023-10-20 | Vertical cavity surface emitting laser array structure |
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