CN117589285A - MEMS vector hydrophone sensitive electrode chip and preparation method thereof - Google Patents
MEMS vector hydrophone sensitive electrode chip and preparation method thereof Download PDFInfo
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- CN117589285A CN117589285A CN202311579174.3A CN202311579174A CN117589285A CN 117589285 A CN117589285 A CN 117589285A CN 202311579174 A CN202311579174 A CN 202311579174A CN 117589285 A CN117589285 A CN 117589285A
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- 238000002360 preparation method Methods 0.000 title abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 29
- 239000008151 electrolyte solution Substances 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000002955 isolation Methods 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 11
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 10
- 239000010936 titanium Substances 0.000 claims description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
- 239000002131 composite material Substances 0.000 claims description 8
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 238000002207 thermal evaporation Methods 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 238000000926 separation method Methods 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 8
- 238000001514 detection method Methods 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000004038 photonic crystal Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000005275 alloying Methods 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00166—Electrodes
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- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
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- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
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- G01—MEASURING; TESTING
- G01H—MEASUREMENT OF MECHANICAL VIBRATIONS OR ULTRASONIC, SONIC OR INFRASONIC WAVES
- G01H11/00—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties
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Abstract
The invention discloses a MEMS vector hydrophone sensitive electrode chip and a preparation method thereof, and relates to a hydrophone electrode chip and a preparation method thereof. The method aims to solve the problems that the existing vector hydrophone has insufficient sensitivity in the aspect of very low frequency detection and can not normally identify the acoustic signals to be detected, wherein a chip comprises a substrate, a pair of cathode plates, a pair of anode plates and a plurality of electrolyte solution micro-channels; the pair of cathode plates are arranged in mirror symmetry, and two opposite side surfaces of the pair of cathode plates are fixedly connected with two side surfaces of the substrate respectively; the pair of anode plates are arranged in mirror symmetry, and two opposite side surfaces of the pair of anode plates are fixedly connected with two outer side surfaces of the pair of cathode plates respectively; the cross section area of the anode plate is smaller than that of the cathode plate; the electrolyte solution micro-channels are all penetrated from one anode plate to the other anode plate.
Description
Technical Field
The invention relates to a hydrophone electrode chip and a preparation method thereof.
Background
The hydrophone is a core element for converting acoustic signals into electric signals, and has wide application in the field of underwater acoustic signal detection. Common types of vector hydrophones include optical fiber hydrophones, photonic crystal hydrophones, piezoelectric hydrophones, moving coil hydrophones, MEMS differential capacitance hydrophones and the like.
The optical hydrophones such as the optical fiber hydrophone and the photonic crystal hydrophone have higher sensitivity, and can reach high sensitivity of-160 dB. However, the frequency range of the optical hydrophone does not contain a very low frequency band below 10Hz, so that the detection of underwater mute targets is quite limited. The sensitivity of the vector hydrophone of the piezoelectric principle, the moving coil principle and the MEMS differential capacitance type in a very low frequency band is lower than-200 dB@10HZ, so that the detection distance of a target to be detected and the detection precision of the hydrophone are limited.
Disclosure of Invention
The invention aims to solve the problems that the existing vector hydrophone has insufficient sensitivity in the aspect of very low frequency detection and can not normally identify an acoustic signal to be detected, and provides an MEMS vector hydrophone sensitive electrode chip and a preparation method thereof.
The invention provides an MEMS vector hydrophone sensitive electrode chip, which comprises a substrate, a pair of cathode plates, a pair of anode plates and a plurality of electrolyte solution micro-channels;
the pair of cathode plates are arranged in mirror symmetry, and two opposite side surfaces of the pair of cathode plates are fixedly connected with two side surfaces of the substrate respectively;
the pair of anode plates are arranged in mirror symmetry, and two opposite side surfaces of the pair of anode plates are fixedly connected with two outer side surfaces of the pair of cathode plates respectively; the cross section area of the anode plate is smaller than that of the cathode plate;
the electrolyte solution micro-channels are all penetrated from one anode plate to the other anode plate.
The invention also provides a preparation method of the MEMS vector hydrophone sensitive electrode chip, which is based on the MEMS vector hydrophone sensitive electrode chip;
the method comprises the following specific steps:
preparing a cathode isolation layer on two side surfaces of a substrate by a thermal oxidation and plasma enhanced chemical vapor deposition (LPCVD) film forming method in sequence, and preparing a cathode electrode layer by a magnetron sputtering or thermal evaporation method;
preparing an anode support layer and an anode isolation layer on two outer side surfaces of a pair of cathode plates sequentially through a plasma enhanced chemical vapor deposition PECVD film forming method, and preparing an anode electrode layer through a magnetron sputtering or thermal evaporation method;
and thirdly, penetrating the anode electrode layer on one side to the anode electrode layer on the other side to form a plurality of electrolyte solution micro-channels. The beneficial effects of the invention are as follows:
the invention provides a sensitive electrode chip for an MEMS vector hydrophone, which adopts a laminated four-electrode structure. The sensitive electrode chip is prepared by adopting the MEMS technology, has the advantages of good consistency, high integration level, simple process, high processing efficiency, low manufacturing cost, large parameter adjustment range, high repeatability, batch production capacity and the like, and can accurately optimize and adjust the structural parameters of the chip according to the test condition.
The MEMS vector hydrophone has higher sensitivity in low frequency and very low frequency ranges, and the sensitivity of the MEMS vector hydrophone adopting the laminated four-electrode structure sensitive electrode chip can reach-170dB@10Hz in the very low frequency range below 10Hz.
Drawings
FIG. 1 is a schematic diagram of a front view structure of a MEMS vector hydrophone sensing electrode chip of the present invention;
fig. 2 is a schematic view of the cross-sectional structure A-A of fig. 1.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that, without conflict, the embodiments of the present invention and features of the embodiments may be combined with each other.
The invention is further described below with reference to the drawings and specific examples, which are not intended to be limiting.
Detailed description of the preferred embodiments
The MEMS vector hydrophone sensitive electrode chip comprises a substrate 1, a pair of cathode plates, a pair of anode plates and a plurality of electrolyte solution micro-channels 4;
the pair of cathode plates are arranged in mirror symmetry, and two opposite side surfaces of the pair of cathode plates are fixedly connected with two side surfaces of the substrate 1 respectively;
the pair of anode plates are arranged in mirror symmetry, and two opposite side surfaces of the pair of anode plates are fixedly connected with two outer side surfaces of the pair of cathode plates respectively; the cross section area of the anode plate is smaller than that of the cathode plate;
the electrolyte solution microchannels 4 each pass through from one anode plate to the other.
Specifically, the MEMS vector hydrophone sensing electrode chip of the present embodiment is a chip of a laminated four-electrode structure. Namely: as shown in fig. 1 and 2, a stacked (substrate 1, a pair of cathode plates, a pair of anode plates stacked) four-electrode structure (two anode electrodes and two cathode electrodes) and an electrolyte solution microchannel 4 are fabricated on a silicon wafer by a MEMS process.
Wherein the electrolyte solution micro-channel 4 allows the electrolyte solution to flow therethrough.
When the MEMS vector hydrophone sensitive electrode chip is used in particular, the MEMS vector hydrophone sensitive electrode chip is fixed in the reaction cavity of the hydrophone, when underwater acoustic signals appear, the MEMS vector hydrophone sensitive electrode chip in the hydrophone can generate current signals under the action of the underwater acoustic signals, and the signals are extracted, denoised and amplified by the rear-end signal processing circuit, so that the underwater acoustic signals can be measured.
Detailed description of the preferred embodiments
This embodiment is further described with respect to the first embodiment, and the number of the electrolyte solution microchannels 4 is 225 to 400.
Other technical features of this embodiment are the same as those of the first embodiment.
Detailed description of the preferred embodiments
This embodiment is further described with respect to the first or second embodiment, in which the cathode plate includes a cathode separator 2-1 and a cathode electrode layer 2-2 stacked together, and the cathode separator 2-1 is in contact with the substrate 1.
Other technical features of this embodiment are the same as those of the first or second embodiments.
Detailed description of the preferred embodiments
This embodiment is further described with respect to the third embodiment, in which the anode plates each include an anode support layer 3-1, an anode separator layer 3-2, and an anode electrode layer 3-3, which are sequentially stacked, and the anode support layer 3-1 is in contact with the cathode electrode layer 2-2.
Other technical features of the present embodiment are the same as those of the third embodiment.
Specifically, as shown in fig. 2, the four electrode plate assemblies of the MEMS vector hydrophone sensitive electrode chip are integrated on a chip through a MEMS process, so that the thickness of a supporting layer (anode supporting layer 3-1), the thicknesses of an electrode layer (cathode electrode layer 2-2 and anode electrode layer 3-3), the thicknesses of an isolating layer (cathode isolating layer 2-1 and anode isolating layer 3-2), the sizes of electrolyte solution micro-channels 4 and electrolyte solution micro-channels 4 can be precisely controlled, the alignment precision of the electrolyte solution micro-channels 4 arranged on the four electrode plate assemblies is improved through a double-sided alignment process, and the structural parameters of the sensitive electrode chip can be adjusted and optimized according to the requirements of hydrophone design parameters, thereby realizing the aims of improving the sensitivity and miniaturization of the hydrophone and improving the low-frequency characteristics of the hydrophone.
Detailed description of the preferred embodiments
In this embodiment, the substrate 1 is an N-type 100 single crystal silicon wafer, and the resistivity is 2 Ω·cm to 6 Ω·cm.
Other technical features of the present embodiment are the same as those of the fourth embodiment.
Detailed description of the preferred embodiments six
This embodiment is further described with respect to the fourth or fifth embodiment, in which the cathode separator 2-1 is a composite layer of silicon nitride and silicon dioxide, and has a thickness of 300nm to 360nm.
The cathode electrode layer 2-2 comprises a cathode platinum metal layer and a cathode titanium metal layer;
the thickness of the cathode platinum metal layer is 150nm, and the thickness of the cathode titanium metal layer is 20nm.
Other technical features of this embodiment are the same as those of the fourth or fifth embodiment.
Detailed description of the preferred embodiments
In this embodiment, the anode support layer 3-1 is a composite layer of silicon dioxide and silicon, and has a thickness of 1 μm to 10 μm.
The anode isolation layer 3-2 is a silicon dioxide layer with the thickness of 300nm-360 nm.
The anode electrode layer 3-3 comprises an anode platinum metal layer and an anode titanium metal layer;
the thickness of the anode platinum metal layer is 150nm, and the thickness of the anode titanium metal layer is 20nm.
Other technical features of the present embodiment are the same as those of the sixth embodiment.
Detailed description of the preferred embodiments
The MEMS vector hydrophone sensitive electrode chip preparation method is based on the MEMS vector hydrophone sensitive electrode chip in the seventh embodiment;
the method comprises the following specific steps:
step one, preparing a cathode isolation layer 2-1 on two side surfaces of a substrate 1 by a thermal oxidation and plasma enhanced chemical vapor deposition (LPCVD) film forming method in sequence, and preparing a cathode electrode layer 2-2 by a magnetron sputtering or thermal evaporation method;
step two, preparing an anode support layer 3-1 and an anode isolation layer 3-2 on two outer side surfaces of a pair of cathode plates sequentially by a plasma enhanced chemical vapor deposition PECVD film forming method, and preparing an anode electrode layer 3-3 by a magnetron sputtering or thermal evaporation method;
and thirdly, penetrating one side anode electrode layer 3-3 to the other side anode electrode layer 3-3 to form a plurality of electrolyte solution micro-channels 4.
Specifically, the detailed steps are as follows:
1. carrying out substrate cleaning on the substrate 1 and manufacturing a cathode isolation layer 2-1;
the substrate 1 is an N-type 100 monocrystalline silicon wafer with resistivity of 2-6Ω & cm, and Si is prepared by thermal oxidation and LPCVD film forming process 3 N 4 /SiO 2 A composite cathode isolation layer 2-1, wherein the thickness of the cathode isolation layer 2-1 is 300-360nm;
2. manufacturing a cathode electrode layer 2-2 on the cathode isolation layer 2-1;
manufacturing a cathode electrode layer 2-2 on the cathode isolation layer 2-1 by adopting magnetron sputtering or thermal evaporation, wherein the cathode electrode layer 2-2 is of a Pt/Ti double-layer composite structure, and the thickness is 150nm/20nm respectively;
3. preparing an anode support layer 3-1;
SiO preparation by PECVD film forming process 2 A +Si composite anode support layer 3-1; material of materialIs monocrystalline silicon or polycrystalline silicon or amorphous silicon, and is prepared by adopting an epitaxial process, and the thickness is 1-10 mu m;
4. preparing an anode isolating layer 3-2 and an anode electrode layer 3-3 on the anode supporting layer 3-1;
SiO preparation by PECVD film forming process 2 The anode isolation layer 3-2 of (2), the anode isolation layer 3-2 is made of Si 3 N 4 /SiO 2 Compounding, wherein the thickness is 300nm-360nm; manufacturing an anode electrode layer 3-3 on the anode isolation layer 3-2 by adopting magnetron sputtering or thermal evaporation, wherein the anode electrode layer 3-3 is of a Pt/Ti double-layer composite structure, and the thickness is 150nm/20nm respectively;
5. as shown in fig. 2, the anode electrode layers 3-3 on both sides of the substrate 1 are patterned into a first anode electrode and a second anode electrode;
patterning the anode electrode layer into an anode electrode lead and an anode electrode by adopting photoetching, etching and alloying processes;
6. as shown in fig. 2, the anode separator 3-2 of the unprotected region is removed;
removing the anode isolating layer 3-2 and the anode supporting layer 3-1 in the unprotected area (the position corresponding to the electrolyte solution micro-channel) by adopting photoetching and etching processes;
7. as shown in fig. 2, cathode electrode layers 2-2 on both sides of a substrate 1 are patterned into cathode electrodes;
patterning the cathode electrode layer 2-2 into a cathode electrode by adopting photoetching and etching processes;
8. as shown in fig. 2, the cathode separator layer 2-1 in the unprotected region is removed, eventually forming an electrolyte solution microchannel 4.
And removing the cathode isolation layer 2-1 and the substrate 1 in the unprotected area by adopting an ICP process to form a laminated four-electrode MEMS vector hydrophone sensitive electrode chip with an electrolyte solution microchannel 4.
Although the invention herein has been described with reference to particular embodiments, it is to be understood that these embodiments are merely illustrative of the principles and applications of the present invention. It is therefore to be understood that numerous modifications may be made to the illustrative embodiments and that other arrangements may be devised without departing from the spirit and scope of the present invention as defined by the appended claims. It should be understood that the different dependent claims and the features herein may be combined in ways other than as described in the original claims. It is also to be understood that features described in connection with separate embodiments may be used in other embodiments.
Claims (8)
1. The MEMS vector hydrophone sensitive electrode chip is characterized by comprising a substrate (1), a pair of cathode plates, a pair of anode plates and a plurality of electrolyte solution micro-channels (4);
the pair of cathode plates are arranged in mirror symmetry, and two opposite side surfaces of the pair of cathode plates are fixedly connected with two side surfaces of the substrate (1) respectively;
the pair of anode plates are arranged in mirror symmetry, and two opposite side surfaces of the pair of anode plates are fixedly connected with two outer side surfaces of the pair of cathode plates respectively; and the cross-sectional area of the anode plate is smaller than the cross-sectional area of the cathode plate;
the electrolyte solution micro-channels (4) are all penetrated from one anode plate to the other anode plate.
2. A MEMS vector hydrophone sensing electrode chip as claimed in claim 1, characterized in that the number of electrolyte solution micro-channels (4) is 225-400.
3. A MEMS vector hydrophone sensing electrode chip according to claim 1 or 2, characterized in that the cathode plates each comprise a cathode separator layer (2-1) and a cathode electrode layer (2-2) arranged in a stack, and that the cathode separator layer (2-1) is in contact with the substrate (1).
4. A MEMS vector hydrophone sensing electrode chip according to claim 3, characterized in that the anode plates each comprise an anode support layer (3-1), an anode separation layer (3-2) and an anode electrode layer (3-3) arranged in sequence, and that the anode support layer (3-1) is in contact with the cathode electrode layer (2-2).
5. A MEMS vector hydrophone sensing electrode chip as defined in claim 4, wherein,
the substrate (1) is an N-type 100 monocrystalline silicon piece, and the resistivity is 2 omega cm-6 omega cm.
6. The MEMS vector hydrophone sensitive electrode chip of claim 4 or 5, wherein the cathode isolation layer (2-1) is a composite layer of silicon nitride and silicon dioxide, and the thickness is 300nm-360nm;
the cathode electrode layer (2-2) comprises a cathode platinum metal layer and a cathode titanium metal layer;
the thickness of the cathode platinum metal layer is 150nm, and the thickness of the cathode titanium metal layer is 20nm.
7. The MEMS vector hydrophone sensing electrode chip of claim 6, wherein the anode supporting layer (3-1) is a composite layer of silicon dioxide and silicon, and the thickness is 1 μm-10 μm;
the anode isolation layer (3-2) is a silicon dioxide layer with the thickness of 300nm-360nm;
the anode electrode layer (3-3) comprises an anode platinum metal layer and an anode titanium metal layer;
the thickness of the anode platinum metal layer is 150nm, and the thickness of the anode titanium metal layer is 20nm.
8. The method for preparing the MEMS vector hydrophone sensitive electrode chip of claim 7,
the method is characterized by comprising the following specific steps:
preparing a cathode isolation layer (2-1) on two side surfaces of a substrate (1) sequentially through a thermal oxidation and plasma enhanced chemical vapor deposition (LPCVD) film forming method, and preparing a cathode electrode layer (2-2) through a magnetron sputtering or thermal evaporation method;
preparing an anode support layer (3-1) and an anode isolation layer (3-2) on two outer side surfaces of a pair of cathode plates sequentially by a plasma enhanced chemical vapor deposition PECVD film forming method, and preparing an anode electrode layer (3-3) by a magnetron sputtering or thermal evaporation method;
and thirdly, penetrating one side anode electrode layer (3-3) to the other side anode electrode layer (3-3) to form a plurality of electrolyte solution micro-channels (4).
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