CN117587511A - Two-dimensional material buffer layer for high quality epitaxial growth of group III nitride - Google Patents
Two-dimensional material buffer layer for high quality epitaxial growth of group III nitride Download PDFInfo
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- CN117587511A CN117587511A CN202311598904.4A CN202311598904A CN117587511A CN 117587511 A CN117587511 A CN 117587511A CN 202311598904 A CN202311598904 A CN 202311598904A CN 117587511 A CN117587511 A CN 117587511A
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- 239000000463 material Substances 0.000 title claims abstract description 45
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 229910052751 metal Inorganic materials 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 27
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 9
- 230000003197 catalytic effect Effects 0.000 claims abstract description 7
- 239000003870 refractory metal Substances 0.000 claims abstract description 7
- 239000010949 copper Substances 0.000 claims abstract description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052802 copper Inorganic materials 0.000 claims abstract description 5
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052982 molybdenum disulfide Inorganic materials 0.000 claims abstract description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 239000010955 niobium Substances 0.000 claims description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052702 rhenium Inorganic materials 0.000 claims description 3
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- 239000010948 rhodium Substances 0.000 claims description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- 229910052582 BN Inorganic materials 0.000 claims description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 2
- ROUIDRHELGULJS-UHFFFAOYSA-N bis(selanylidene)tungsten Chemical compound [Se]=[W]=[Se] ROUIDRHELGULJS-UHFFFAOYSA-N 0.000 claims description 2
- 239000010410 layer Substances 0.000 abstract description 49
- 238000000407 epitaxy Methods 0.000 abstract description 8
- 229910052759 nickel Inorganic materials 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 239000013078 crystal Substances 0.000 abstract 1
- 239000011229 interlayer Substances 0.000 abstract 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 235000009161 Espostoa lanata Nutrition 0.000 description 2
- 240000001624 Espostoa lanata Species 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000001534 heteroepitaxy Methods 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000000861 blow drying Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 238000000879 optical micrograph Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/081—Oxides of aluminium, magnesium or beryllium
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/305—Sulfides, selenides, or tellurides
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/342—Boron nitride
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
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- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/025—Epitaxial-layer growth characterised by the substrate
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
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- C30B29/20—Aluminium oxides
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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Abstract
The invention discloses a two-dimensional material buffer layer for high-quality epitaxial growth of III-nitride. The two-dimensional material buffer layer comprises graphene, molybdenum disulfide and the like. The growth of the two-dimensional material buffer layer can be directly performed on a high-temperature refractory metal substrate, or can be performed on a metal substrate of a pre-sputtered catalytic layer, such as copper (Cu), nickel (Ni) and the like. An AlN buffer layer may further be grown on the two-dimensional material layer to increase the lattice match rate with the nitride epitaxy. The introduction of the interlayer weak bonding two-dimensional buffer layer keeps the thermal matching of the metal substrate and the nitride epitaxy and improves the substrate lattice matching rate, thereby reducing the stress in the nitride epitaxy layer, being beneficial to improving the problems of thermal mismatch and lattice mismatch of III-nitride materials growing on the buffer layer and improving the crystal quality and performance. In addition, the size of the metal substrate is not limited, and the utilization rate of the wafer can be greatly improved.
Description
Technical Field
The invention relates to the technical field of semiconductor materials, in particular to a two-dimensional material buffer layer for high-quality epitaxial growth of III-nitride.
Background
The III nitride has the advantages of high heat conductivity, stable chemical property, directly adjustable band gap and the like, and is widely applied to power electronic and optoelectronic devices. The high quality, low cost preparation of group III nitrides currently remains a bottleneck problem. Nitride homosubstrates are not only expensive, but also small in size. Heteroepitaxy has been studied intensively as a substitute, but has many problems that the lattice mismatch and thermal expansion coefficient mismatch of the nitride epitaxial layer and the substrate can generate larger stress, so that defects and even cracks are caused, and the subsequent device preparation and performance are affected; the sapphire has low thermal conductivity, and the working temperature of the high-power device rises faster to reduce the performance of the nitride device; the high energy or time costs of nitride stripping, transfer and damage to the epitaxial structure limit the development of devices such as foldable, wearable devices. How to solve the problems of heteroepitaxy with larger size of III-nitride, lattice mismatch, thermal expansion mismatch and the like is the current research focus.
Disclosure of Invention
In view of the above, the present invention aims to provide a two-dimensional material buffer layer for high-quality epitaxial growth of group III nitride, the insertion of the two-dimensional material layer not only maintains the thermal expansion coefficient matching between the substrate and the epitaxial layer, but also improves the lattice matching rate of epitaxial growth of nitride, and meanwhile, the separation of the substrate and the epitaxial layer becomes simple and feasible.
In order to achieve the above purpose, the invention adopts the following technical scheme: a two-dimensional material buffer layer for high-quality epitaxial growth of III nitride, wherein a metal substrate is mechanically polished, cleaned and dried; growing a two-dimensional material buffer layer on the metal substrate; and further growing an AlN buffer layer on the two-dimensional material buffer layer.
In a preferred embodiment, the metal substrate is 0.1-100 inches in diameter and is a high temperature refractory metal including molybdenum, niobium, tantalum, tungsten or rhenium.
In a preferred embodiment, the two-dimensional material grown on the refractory metal substrate comprises graphene, molybdenum disulfide/tungsten (Mo/WS) 2 ) Molybdenum/tungsten diselenide (Mo/WSe) 2 ) Or hexagonal boron nitride (h-BN).
In a preferred embodiment, the two-dimensional material growth method comprises Chemical Vapor Deposition (CVD), metal Organic Chemical Vapor Deposition (MOCVD), or Molecular Beam Epitaxy (MBE).
In a preferred embodiment, a layer of copper or Ni is pre-sputtered on a metal substrate as a two-dimensional material to grow a catalytic layer, the catalytic layer metal further comprising platinum, rhodium, silver, iron or cobalt.
In a preferred embodiment, an AlN buffer layer is grown on the two-dimensional material buffer layer by magnetron sputtering.
Compared with the prior art, the invention has the following beneficial effects:
(1) The substrate using the high-temperature refractory metal as the nitride epitaxy provided by the invention has the characteristics of low cost and easiness in mass production, breaks through the limitation of the size and diversity selection of the existing substrate, has high thermal matching degree with epitaxy and is simple in substrate stripping.
(2) The two-dimensional material buffer layer grown on the metal substrate has stable physical and chemical properties, can reduce stress generated by the nitride epitaxy due to lattice mismatch, improves the quality of the nitride epitaxy and is easy to realize the transfer of the nitride epitaxy. The excellent performance of the two-dimensional material can realize heterogeneous integration with a nitride device and realize a novel photoelectric device.
(3) And an AlN buffer layer is grown on the two-dimensional material layer, so that lattice mismatch between the substrate and the epitaxial layer is further reduced, and the epitaxial growth quality of nitride is greatly improved.
Drawings
FIG. 1 is a schematic view of a metal substrate and a two-dimensional material grown thereon in a preferred embodiment of the present invention, the structure of which comprises: 101. a metal substrate; 102. a two-dimensional material buffer layer; 103. and an aluminum nitride buffer layer.
Fig. 2 is a schematic structural diagram (a) of a preferred embodiment of the present invention, including: 101. a metal substrate; 103. an aluminum nitride buffer layer; 104. metal catalytic layers (e.g., copper, nickel); 105. a two-dimensional material buffer layer (e.g., graphene); 106. Group III nitrides.
FIG. 3 is a schematic diagram of a structure (II) in a preferred embodiment of the present invention, which comprises 101, a metal substrate; 103. An aluminum nitride buffer layer; 106. group III nitrides; 107. a buffer layer of two-dimensional material (e.g., molybdenum disulfide).
FIG. 4 is an optical microscope image of graphene grown on a Mo substrate in a preferred embodiment of the invention;
fig. 5 is a scanning electron microscope image of AlN grown on a Mo/graphene substrate in a preferred embodiment of the present invention.
Description of the embodiments
The invention will be further described with reference to the accompanying drawings and examples.
It should be noted that the following detailed description is illustrative and is intended to provide further explanation of the present application. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments in accordance with the present application; as used herein, the singular is also intended to include the plural unless the context clearly indicates otherwise, and furthermore, it is to be understood that the terms "comprises" and/or "comprising" when used in this specification are taken to specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof.
A method for growing two-dimensional material on a large-size or even oversized metal substrate as a buffer layer to obtain a high-quality nitride epitaxial material, wherein the insertion of the two-dimensional material layer not only maintains the thermal expansion coefficient matching between the substrate and the epitaxial layer, but also improves the lattice matching rate of epitaxial growth of the nitride, and meanwhile, the separation of the substrate and the epitaxial layer becomes simple and feasible.
Referring to fig. 1-5, a metal substrate is mechanically polished, cleaned and dried; growing a two-dimensional material buffer layer on a metal substrate; an AlN buffer layer may further be grown on the two-dimensional material buffer layer.
The high temperature refractory metal substrate may be molybdenum, niobium, tantalum, tungsten, rhenium, etc., and has a size of 0.1-100 inches
The two-dimensional material buffer layer comprises graphene, mo/WS 2 、Mo/WSe 2 h-BN, etc., may be single layer, few layers, or multiple layers.
The two-dimensional material buffer layer is grown by CVD, MOCVD, MBE and the like.
The catalytic layer metal pre-sputtered on the metal substrate may be copper, nickel, platinum, rhodium, silver, iron, cobalt, etc.
An AlN buffer layer may be further grown on the two-dimensional material buffer layer using magnetron sputtering.
Specific examples:
mechanically polishing a metal Mo sheet, sequentially wiping by using acetone cotton balls and absolute ethyl alcohol cotton balls, washing by using deionized water, and finally using N 2 And (5) blow-drying. Depositing graphene on a Mo substrate by adopting tubular furnace equipment, keeping Ar flow of 120 sccm and H 2 The flow rate is 30 sccm, the temperature is raised to 900 ℃ for 30 min and kept for 5 min; then heating to 1000 ℃, and introducing CH 4 Flow 30 sccm, H 2 The flow is 20 sccm, and the temperature is reduced after the temperature is maintained for 47 minutes. Uniform graphene was obtained on Mo substrates as shown in fig. 4.
And further performing magnetron sputtering on the AlN film on the prepared Mo/graphene substrate. Evacuating the chamber to below 4X 10 -4 Heating the substrate to 650 ℃ after Pa, keeping Ar flow at 30 sccm, sputtering Al and N after starting 2 The flow rate is 25 sccm, and the temperature is reduced after 3 h. A 200 a nm thick uniform AlN film was obtained on a Mo/graphene substrate, as shown in fig. 5.
Claims (6)
1. The two-dimensional material buffer layer for high-quality epitaxial growth of III-nitride is characterized in that a metal substrate is mechanically polished, cleaned and dried; growing a two-dimensional material buffer layer on the metal substrate; and further growing an AlN buffer layer on the two-dimensional material buffer layer.
2. The buffer layer of two-dimensional material for high quality epitaxial growth of group III nitrides of claim 1, wherein the metal substrate is 0.1-100 inches in diameter and is a high temperature refractory metal comprising molybdenum, niobium, tantalum, tungsten or rhenium.
3. The buffer layer of two-dimensional material for high quality epitaxial growth of group III nitride of claim 1, wherein the two-dimensional material grown on the refractory metal substrate comprises graphene, molybdenum disulfide/tungsten (Mo/WS 2 ) Molybdenum/tungsten diselenide (Mo/WSe) 2 ) Or hexagonal boron nitride (h-BN).
4. A two-dimensional material buffer layer for high quality epitaxial growth of group III nitrides according to claim 3, characterized in that the two-dimensional material growth method comprises Chemical Vapor Deposition (CVD), metal Organic Chemical Vapor Deposition (MOCVD) or Molecular Beam Epitaxy (MBE).
5. The buffer layer of two-dimensional material for high quality epitaxial growth of group III nitrides according to claim 1, characterized in that a layer of copper or Ni is pre-sputtered on a metal substrate as a two-dimensional material growth catalytic layer, said catalytic layer metal further comprising platinum, rhodium, silver, iron or cobalt.
6. The two-dimensional material buffer layer for high quality epitaxial growth of group III nitrides according to claim 1, characterized in that an AlN buffer layer is grown on the two-dimensional material buffer layer using magnetron sputtering.
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