CN117581334A - 用于填充半导体组件的背侧空穴的方法和装置 - Google Patents

用于填充半导体组件的背侧空穴的方法和装置 Download PDF

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CN117581334A
CN117581334A CN202280046783.XA CN202280046783A CN117581334A CN 117581334 A CN117581334 A CN 117581334A CN 202280046783 A CN202280046783 A CN 202280046783A CN 117581334 A CN117581334 A CN 117581334A
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metal
suspension
containing powder
backside
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H·维斯特
C·胡贝尔
J·巴林豪斯
J·奥特
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Robert Bosch GmbH
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Abstract

本发明涉及一种用于填充半导体组件的背侧空穴的方法(100，200)，其中，所述背侧空穴具有金属层，所述方法包括以下步骤：将具有确定的液滴尺寸的悬浮液借助液滴施加器释放(110，210)到所述半导体组件的背侧空穴中，其中，所述悬浮液具有含金属的粉末和液态的分散介质，其中，所述含金属的粉末具有在纳米范围内的颗粒尺寸，和将所述半导体组件加热(130，230)到小于500℃的温度，其中，烧结所述含金属的粉末。

Description

用于填充半导体组件的背侧空穴的方法和装置
技术领域
本发明涉及一种用于填充半导体组件的背侧空穴的方法和装置。
背景技术
在异物衬底上施加有SiC或GaN的异质外延层的竖直的半导体结构元件对于电流需要在背侧上的具有几毫米伸展量的空穴。为了能够确保半导体结构元件的稳定性和电连接，这些空穴必须填充以金属。
在此不利的是，借助传统的半导体过程不能成本低地、快速地和选择性地填充如此大的空穴。
发明内容
本发明的任务是克服这些缺点。
根据本发明的用于填充半导体组件的背侧空穴的方法包括借助液滴施加器将悬浮液以确定的液滴尺寸释放到半导体组件的背侧空穴中，其中，背侧空穴具有金属层。悬浮液具有含金属的粉末和液态的分散介质。含金属的粉末具有在纳米范围内的颗粒尺寸。换言之，该含金属的粉末是含金属的纳米粉末。所述方法包括将半导体组件加热到小于500℃的温度，其中，使含金属的粉末烧结。
在此有利的是，背侧空穴的填充有针对性地或选择性地进行并且是成本低的。金属的烧结在此在相对较低的温度下进行，使得能够以这种方式产生半导体结构元件，该半导体结构元件在较高的烧结温度下不再是温度稳定的并且不承受高压。
在一个扩展方案中，在悬浮液的释放和半导体装置的加热之间进行液态的分散介质的蒸发。
在此有利的是，干燥的悬浮液的粉末颗粒的堆积密度高于纯金属粉末的堆积密度，使得烧结更快地进行。
在一个构型中，将具有确定的液滴尺寸的悬浮液借助液滴施加器释放到半导体组件的背侧空穴中，并且同时将半导体组件加热到小于500℃的温度。
在此有利的是，快速地进行背侧空穴的填充。
在一个扩展方案中，检测在背侧空穴和烧结的含金属粉末之间的间隙，并且根据检测到的间隙操控液滴施加器，其中，将悬浮液释放到间隙中。
在此有利的是，可以与过程相关地控制背侧空穴的填充。
在另一构型中，检测间隙的尺寸，并且根据间隙的尺寸借助液滴施加器调设悬浮液的确定的液滴尺寸。
在此有利的是，通过粉末的压缩产生的间隙被填充，以便实现空穴的完全填充。
在一个扩展方案中，背侧空穴的金属层和悬浮液的含金属的粉末具有相同的金属。
在此有利的是，在半导体衬底、金属层和烧结的含金属的粉末之间形成材料锁合的连接。
在另一构型中，确定的液滴尺寸包括最大1μl。
在此有利的是，可以使用常用的液滴施加器。
在另一扩展方案中，含金属的粉末具有小于1μm的颗粒尺寸。
在此有利的是，烧结温度可以明显地降低到所使用的材料的熔化点。
在另一扩展方案中，含金属的粉末包括铜。
在此有利的是，实现填充的背侧空穴的非常好的导电性。
用于填充半导体组件的背侧空穴的装置具有液滴施加器和调温装置，其中，背侧空穴具有金属层，所述液滴施加器设置为用于将悬浮液以确定的液滴尺寸释放，其中，悬浮液具有含金属的粉末和液态的分散介质，所述调温装置加热半导体组件。根据本发明，含金属的粉末具有在纳米范围内的颗粒尺寸。调温装置调设小于500℃的温度。
由下面的实施例的描述或者独立权利要求得出另外的优点。
附图说明
在下面根据实施方式和附图阐述本发明。附图示出了：
图1：根据本发明的用于填充半导体组件的背侧空穴的方法的第一实施例，
图2：根据本发明的用于填充半导体组件的背侧空穴的方法的第二实施例，
图3a：同时执行的图2的过程步骤210和230的过程结果，
图3b：在执行图2的过程步骤260之后的过程结果，和
图4：根据本发明的用于填充半导体组件的背侧空穴的装置。
具体实施方式
图1示出根据本发明的用于填充半导体组件的背侧空穴的方法100的第一实施例。方法100以步骤110开始，在该步骤中，借助液滴施加器将悬浮液以确定的液滴尺寸释放到半导体组件的背侧空穴中。确定的液滴尺寸在此具有在几nl至1μl之间的体积。悬浮液包括具有在纳米范围内的颗粒尺寸的含金属的粉末和液态的分散介质。悬浮液的固体含量包括至少20vol.-％，优选大于40vol.-％。通过混入化学添加剂，悬浮液的固体含量可以升高到50-70vol.-％。这样的化学添加剂例如是三十烷酸。含金属的粉末的颗粒尺寸小于1μm、尤其500nm、优选300nm。液态的分散介质在此可以是酒精或水。根据所选择的液态的分散介质，在可选的后续步骤120中，使液态的分散介质借助外部热源，例如红外灯或氙灯蒸发。在随后的步骤130中，借助调温装置将半导体组件加热到小于500℃的温度。温度优选位于300℃至500℃之间。由此，含金属的粉末被烧结和压缩。压缩到确定的密度或完全压缩。烧结温度由于纳米级的金属颗粒显著低于相同金属的较大颗粒的通常的烧结温度。换言之，对于烧结含金属的纳米粉末仅需要低的烧结温度。因此不需要提高的压力，以便压缩含金属的纳米粉末。
图2示出根据本发明的用于填充半导体组件的背侧空穴的方法200的第二实施例。所述方法以步骤210和230开始，其中，步骤210和230同时执行。这意味着，在步骤230中借助调温装置将半导体组件加热到确定的温度，同时在步骤210中，借助液滴施加器将悬浮液以确定的液滴尺寸释放到半导体组件的背侧空穴中，其中，悬浮液具有含金属的纳米粉末和液态的分散介质。在此，液态的分散介质立即蒸发并且含金属的纳米粉末连续地被烧结和压缩，其中，持续地释放或补充悬浮液。为了达到纳米粉末的尽可能最大的压缩，可以是，对于确定的时间停止将悬浮液连续地释放到背侧空穴中，其中，将调温装置保持低的烧结温度。因此，在此期间，液滴施加器可以填充半导体组件的另一背侧空穴。在随后的步骤240中，检测背侧空穴和已经烧结的纳米粉末之间的间隙，该间隙可能由于纳米粉末的压缩形成。如果已经检测到间隙，则在随后的步骤250中求取间隙的尺寸。在随后的步骤260中，根据间隙的尺寸调设悬浮液的确定的液滴尺寸。如果在背侧空穴和已经烧结的纳米粉末之间没有检测到间隙，则所述方法继续执行步骤210。
为了控制填充的背侧空穴的孔隙率，可以中断半导体组件的加热或使半导体组件运动到制造设备的较冷区域中。
通过用悬浮液填充背侧空穴，附加地可以在背侧空穴的上边缘处产生非常限定的表面，使得实现平面的终止，由此可以以简单的方式执行后续的过程步骤，如构造和连接技术以及钎焊过程。
不但在第一实施例中，而且在第二实施例中，背侧空穴都可以有金属层。由此能够实现金属层和烧结的含金属的纳米粉末之间的材料锁合的连接。为了防止烧结的含金属的粉末的金属原子扩散到半导体衬底中，可以在金属层和半导体衬底之间集成有薄层作为扩散屏障。铜和硅之间的扩散屏障例如可以是钽基的薄层。
在这两个实施例中，含金属的粉末优选是铜。
图3a示出图2的同时执行的过程步骤210和230的过程结果。图3a示出液滴施加器310、具有背侧空穴314的半导体衬底312，其中，背侧空穴314包括金属层316。液滴施加器310将具有含金属的纳米粉末的悬浮液释放到背侧空穴中，其中，调温装置320同时将半导体组件加热到低于500℃的温度。在背侧空穴内示出已经烧结的含金属的纳米粉末324和未烧结的含金属的纳米粉末326。
图3b示出在执行图2的过程步骤260之后的过程结果。在图3b中相同的附图标记说明了与在图3a中相同的特征。在背侧空穴314内示出背侧空穴314和已烧结的含金属的纳米粉末324之间的间隙328。
图4示出根据本发明的用于填充半导体组件的背侧空穴414的装置400。装置400包括液滴施加器410和调温装置420。液滴施加器410设置为用于将具有含金属的纳米粉末和液态的分散介质的悬浮液418释放到待填充的工件中。可选地，装置400具有热源422，该热源设置为用于使液态的分散介质蒸发。例如在这里示出半导体组件的背侧空穴414。背侧空穴414延伸到半导体衬底412中并且具有金属层416。需要注意的是，背侧空穴414、半导体衬底412和金属层416并不是装置400的组成部分。
装置400应用于具有纳米级或微米级尺寸的晶片半导体过程以及其它金属化过程中。

Claims (10)

1.一种用于填充半导体组件的背侧空穴的方法(100，200)，其中，所述背侧空穴具有金属层，所述方法包括以下步骤：
-借助液滴施加器将悬浮液以确定的液滴尺寸释放(110，210)到所述半导体组件的背侧空穴中，其中，所述悬浮液具有含金属的粉末和液态的分散介质，其中，所述含金属的粉末具有在纳米范围内的颗粒尺寸，和
-将所述半导体组件加热(130，230)到小于500℃的温度，其中，使所述含金属的粉末烧结。
2.根据权利要求1的方法(100)，其特征在于，在所述悬浮液的释放(110)和所述半导体组件的加热(130)之间进行所述液态的分散介质的蒸发。
3.根据权利要求1的方法(100，200)，其特征在于，所述悬浮液的释放(110，210)和所述半导体组件的加热(130，230)同时发生。
4.根据权利要求3所述的方法(100，200)，其特征在于，检测所述背侧空穴与烧结的含金属的粉末之间的间隙，并且根据检测到的间隙操控所述液滴施加器，其中，将悬浮液释放到所述间隙中。
5.根据权利要求4所述的方法(100，200)，其特征在于，检测所述间隙的尺寸，并且根据所述间隙的尺寸调设所述悬浮液的确定的液滴尺寸。
6.根据前述权利要求中任一项所述的方法(100，200)，其特征在于，所述背侧空穴的金属层和所述悬浮液的含金属的粉末具有相同的金属。
7.根据前述权利要求中任一项所述的方法(100，200)，其特征在于，所述确定的液滴尺寸包括最大1μl。
8.根据前述权利要求中任一项所述的方法(100，200)，其特征在于，所述含金属的粉末具有小于1μm的颗粒尺寸。
9.根据前述权利要求中任一项所述的方法(100，200)，其特征在于，所述含金属的粉末包括铜。
10.一种用于填充半导体组件的背侧空穴的装置(400)，其中，所述背侧空穴具有金属层，所述装置具有：
-液滴施加器(410)，所述液滴施加器设置为用于将悬浮液以确定的液滴尺寸释放，其中，所述悬浮液具有含金属的粉末和液态的分散介质，和
-调温装置(420)，所述调温装置加热所述半导体组件，
其特征在于，所述含金属的粉末具有在纳米范围内的颗粒尺寸，并且所述调温装置(420)调设小于500℃的温度。
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