CN117577655A - Three-dimensional groove electrode detector array and preparation method thereof - Google Patents
Three-dimensional groove electrode detector array and preparation method thereof Download PDFInfo
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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Abstract
The application belongs to the technical field of three-dimensional detectors, and particularly relates to a three-dimensional trench electrode detector array and a preparation method thereof. According to the method and the device, the area of each detection unit of the array at the junction is reduced, so that the etching depth of the junction is reduced, and the non-horizontal distribution state of the bottom of the three-dimensional trench electrode detector array is effectively improved. The electric field distribution uniformity at the bottom of the device is improved, and the collection of electric signals is further improved. Therefore, the detector array designed by the application has good application prospect in the fields of aerospace, deep space exploration, universe exploration, important physical experiments, medicine, X-ray imaging, military industry and the like.
Description
Technical Field
The application belongs to the technical field of three-dimensional detectors, and particularly relates to a three-dimensional trench electrode detector array and a preparation method thereof.
Background
The silicon detector works under the reverse bias, when external particles enter the sensitive area of the detector, the generated electron-hole pairs are separated under the reverse bias, the electrons move to the positive electrode and are collected after reaching the positive electrode, the holes move to the negative electrode and are collected by the negative electrode, and an electric signal reflecting the particle information can be formed in an external circuit. The method has the advantages of high detection sensitivity, high response speed, strong irradiation resistance, easy integration, important application value in the fields of high-energy particle detection, X-ray detection and the like, and good application prospect in the fields of high-energy physics, celestial body physics and the like.
The three-dimensional trench electrode silicon detector utilizes deep silicon etching process technology to etch a deep trench in a silicon body, and utilizes in-situ doping or ion implantation doping in the deep trench to form a trench electrode, compared with the traditional three-dimensional columnar electrode silicon detector, saddle areas (low electric field dead areas) between the columnar electrodes disappear, electric field distribution is more uniform, and because the trench electrode completely surrounds a central reading electrode, crosstalk between adjacent pixel units is extremely low.
However, for a detector array composed of multiple three-dimensional trench electrode detection units, the etching depth at the interface formed by each detection unit of the array is generally greater than that of other adjacent positions, which easily causes uneven electric field distribution at the bottom of the device and thus affects the collection of electrical signals.
Disclosure of Invention
The technical purpose of the application is to at least solve the problem that the relatively large etching depth generated at the junction of the array formed by the existing three-dimensional trench electrode detection units is easy to cause uneven electric field distribution at the bottom of the device.
The aim is achieved by the following technical scheme:
in a first aspect, the present application provides a three-dimensional trench electrode detector array comprising a detection unit; each detection unit comprises:
a center electrode;
a trench electrode: the device comprises a first groove wall and a second groove wall, wherein the first groove wall and the second groove wall are intersected and arranged, and an intersection position is formed at the intersection position;
the intersection has a width along a first direction and/or a second direction, and the first groove wall has a width along the first direction; the second groove wall has a width along a second direction;
each width satisfies one or both of the following:
the width of the crossing bit is not greater than the width of the first groove wall along the first direction;
the width of the crossing bit is not greater than the width of the second groove wall along the second direction;
the first direction is different from the second direction.
According to the method, the width of the crossing position along the first direction and/or the second direction is not larger than the width of the first groove wall and/or the width of the second groove wall, and the etching depth is reduced by reducing the area of each detection unit of the array at the junction, so that the non-horizontal distribution state of the bottom of the three-dimensional groove electrode detector array is effectively improved. The electric field distribution uniformity at the bottom of the device is improved, and the collection of electric signals is further improved. In addition, the probability that the electric field concentration causes the device to break down in advance is reduced by raising the breakdown voltage of the detector device.
In some embodiments of the present application, the first trench wall and/or the second trench wall is provided with a first side end disposed proximate to the intersection and a second side end disposed distal to the intersection;
the width of the first groove wall along the first direction and/or the width of the second groove wall along the second direction increases in a gradient manner when the width extends from the first side end to the second side end.
In the design, the design mode that the width of the groove wall is larger than the width of the crossing position is selected, so that the area of each detection unit of the array at the junction is reduced.
In some embodiments of the present application, the first trench wall and/or the second trench wall is provided with a first side end disposed proximate to the intersection and a second side end disposed distal to the intersection;
the width of the first groove wall along the first direction and/or the width of the second groove wall along the second direction is increased in gradient and then reduced in gradient when the width of the first groove wall along the first direction and/or the width of the second groove wall along the second direction extend from the first end to the second side end.
In the design, the design mode that the width of the groove wall is larger than or equal to the cross bit width is selected, so that the area of each detection unit of the array at the junction is reduced.
In some embodiments of the present application, the width of the first groove wall in a first direction and/or the width of the second groove wall in a second direction varies linearly and/or non-linearly as it extends from the first side end to the second side end,
preferably, the nonlinear variation comprises an exponential variation or a logarithmic variation.
In the design, the width of the groove wall is selected to meet the gradient change rule, and the area of each detection unit of the array at the junction can be reduced.
In some embodiments of the present application, the two sides of the first trench wall and the two sides of the second trench wall form the detection unit, and the detection unit forms an mxn detector array, and M, N is a positive integer.
In some embodiments of the present application, the crossing position is provided with a through hole;
preferably, the central axis direction of the through hole coincides with the axial direction of the trench electrode;
preferably, the through hole is any one or more than two of a polygonal through hole, a circular through hole, an elliptic through hole, a fan-shaped through hole and a cross-shaped through hole;
the polygonal through holes are preferably any one or more than two of triangular through holes, square through holes or hexagonal through holes.
In some embodiments of the present application, the trench electrode is a hollow polygonal column, which is any one of a triangular prism, a square, or a hexagonal prism.
In some embodiments of the present application, the central electrode and the trench electrode are made of a semiconductor material, and the semiconductor material is Si, ge, gaN, siC, hgI 2 、GaAs、TiBr、CdTe、CdZnTe、CdSe、GaP、HgS、PbI 2 Or one or two or more of AlSb.
A second aspect of the present application provides a method for preparing a three-dimensional trench electrode detector array, the method comprising:
providing a substrate;
etching the substrate to form a first groove wall and a second groove wall, wherein the first groove wall and the second groove wall are intersected and arranged and form an intersection position at the intersection position;
continuing etching to enable the width of the crossing position along the first direction and/or the second direction to be not larger than the width of the first groove wall along the first direction and/or the width of the second groove wall along the second direction;
etching the inside of a detection unit formed by the first groove wall and the second groove wall to form a central electrode;
an insulator is embedded between the center electrode and the trench wall.
In some embodiments of the present application, the etching comprises a deep silicon etching process comprising a Bosch process.
The preparation process designed by the application can not change the preparation process of the existing trench electrode, and does not need to add extra process steps, so that the implementation feasibility is high.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the application. Also, like reference numerals are used to designate like parts throughout the figures. In the drawings:
FIG. 1 schematically illustrates a schematic diagram of a prior art conventional detector array;
FIG. 2 schematically illustrates a partial schematic diagram of the detector array of FIG. 1;
FIG. 3 schematically illustrates a schematic view of the structure of the wall of the channel at the interface of FIG. 1;
FIG. 4 schematically illustrates the microscopic test pattern of FIG. 3;
FIG. 5 schematically shows a graph of experimental results of different width trench etching;
FIG. 6 schematically illustrates a structural schematic of a detector array according to an embodiment of the present application;
FIG. 7 schematically illustrates a schematic view of the structure of the wall of the channel at the interface of FIG. 6;
fig. 8 schematically shows a top view of fig. 7;
FIG. 9 schematically illustrates an enlarged schematic view of the structure of the portion C in FIG. 8;
FIG. 10 schematically illustrates an enlarged schematic view of the structure at the C-site in FIG. 8;
FIG. 11 schematically illustrates another structural view of the portion C of FIG. 8;
FIG. 12 schematically illustrates a schematic view of the wall of the channel at the interface of FIG. 6;
FIG. 13 schematically illustrates another structural view of the wall of the channel at the interface of FIG. 6;
FIG. 14 schematically shows a simulation schematic;
FIG. 15 schematically illustrates a simulation result diagram;
FIG. 16 schematically illustrates a simulation result diagram;
the reference numerals in the drawings are as follows:
1000. a detector array; 100. a detector unit; 200. a substrate; 300. a junction; 301. a bottom tip;
2000. a base;
10. a trench electrode;
11. a first trench wall; 11a, a first wall end; 11b, a second wall end; 11c, a first side end; 11d, a second side end;
12. a second trench wall;
13. crossing positions; 13a, a first part; 13b, a second part; 13c, a third section; 13d, a fourth part;
20. a center electrode;
30. a through hole;
c part: an amplifying region;
η: the width of the first groove wall or the width of the second groove wall;
η 1 : the width of the first groove wall or the second groove wall at the first side end;
η n : the width of the first groove wall or the second groove wall at the second side end;
η x : a width of the first or second groove wall at a location between the first and second side ends;
n 1 : the width of the crossing bit along the first direction or the second direction;
coordinate axis x direction: the width or length direction of the detection unit; or may refer to the width or length of the trench wall;
coordinate axis y direction: the length or width direction of the detection unit; or may refer to the width or length of the trench wall;
coordinate axis z direction: the height direction of the detection unit; may also refer to the depth direction of the trench walls;
a first direction: coordinate axis x direction or coordinate axis y direction;
and (2) in a second direction: the y direction of the coordinate axis or the x direction of the coordinate axis.
Term interpretation and english shorthand meaning:
TCAD: is known collectively as semiconductor process and device simulation software. The TCAD is a numerical simulation tool based on the physical foundation of the semiconductor, and can simulate different process conditions to replace or partially replace expensive and time-consuming process experiments; different device structures can be designed and optimized to obtain ideal characteristics; the circuit performance, the electrical defects and the like can be simulated. The TCAD can reduce the production cost by 40% by reducing the experiment times and the research and development time.
Bosch: the alternating reciprocating process disclosed by Laemer and Schilp and applied by Robert Bosch Gmbh in 1996 is the most widely applied and developed deep silicon etching process at present, and a deposition process which is alternately performed with the alternating reciprocating process is added in a pure reactive ion etching process, so that the side wall is protected from being etched, a high-depth vertical side wall is obtained, and a higher depth-to-width ratio is obtained under the condition of keeping a high etching selectivity ratio.
RIE-Lag: the consumption of the partial etching gas is greater than that caused by the supplyEtch rateA dip or maldistribution effect, which includes loading effects related to etch aspect ratio.
Detailed Description
In the prior art, a three-dimensional trench electrode detector utilizes a deep silicon etching process technology to etch a deep trench, which can also be called a trench, in a substrate such as a silicon substrate, and utilizes in-situ doping or ion implantation doping in the deep trench to form a trench electrode, so that saddle areas between the same type of columnar electrodes disappear compared with the traditional three-dimensional columnar electrode detector, and the saddle areas are also called low electric field dead areas. After the saddle area disappears, the electric field distribution is more uniform, and the cross talk between adjacent pixel units is extremely low because the trench electrode completely surrounds the central reading electrode.
As shown in fig. 1, a conventional three-dimensional trench electrode detector array 1000 is composed of a plurality of three-dimensional trench electrode detection units 100, and fig. 1 illustrates a 2×2 array. The three-dimensional trench electrode detection unit 100 includes a substrate 200, a trench electrode 10 and a center electrode 20 on the substrate 200, and an insulator is used to isolate the trench electrode 10 from the center electrode 20. In some embodiments, the trench electrode is selected to be n-doped, the center electrode is p-doped, and the insulator between the trench electrode and the center electrode is a depletion region. When external particles enter the depletion region, a series of electron-hole pairs are caused, the electron-hole pairs drift under the action of an electric field, electrons flow to the trench electrode, holes flow to the central electrode, current is formed, and relevant information of the incident particles can be obtained through a method and treatment of a current signal. Therefore, the three-dimensional groove electrode detector array has good application prospect in the fields of aerospace, deep space exploration, universe exploration, important physical experiments, medicine, X-ray imaging, military industry and the like.
As can be seen in fig. 2, 3 and 4, each of the probe units 100 of the array 1000 typically has a greater etch depth at the interface 300 than at other adjacent locations. This tends to result in uneven distribution of the electric field at the bottom of the device and thus affects the collection of electrical signals. More serious is that a greater etch depth at the array interface 300 causes a bottom tip 301, which bottom tip 301 in turn may cause electric field concentrations that lead to premature breakdown of the device.
How to reduce the etching depth of each detection unit of the array at the junction is a technical problem that needs to be solved by those skilled in the art. The applicant has conducted a related study, specifically taking a Bosch process in a deep silicon etching process technology as an example, wherein the etching principle of the process is as follows:
the first step of etching process principle:
and the second step of passivation process principle:
and thirdly, etching process principle:
the etching index is affected by the bottom electrode bias, cavity pressure, etching gas flow, etching time, etching radio frequency power, passivation gas flow and other technological parameters. Also associated with the etch aspect ratio is the loading effect in the etch hysteresis (RIE-Lag), which manifests itself in different dimensions of the pattern etch depth on the same substrate. The wide pattern is etched deep and the narrow pattern is etched shallow. In the present application, under the condition of determining the process parameters, a trench etching result diagram with different widths shown in fig. 5 is obtained, and as can be seen from fig. 5, under the condition of determining the process parameters, the trench etching depth is related to the trench width, and in some embodiments, the coordinate axis z direction in fig. 1 or fig. 3 is selected as the trench etching depth, and the coordinate axis x direction or the coordinate axis y direction is the trench width. As can be seen from fig. 5, the wider the trench width, the larger the intake air amount, and the deeper the etching depth, whereas the narrower the width, the smaller the intake air amount, and the smaller the etching depth.
It has been further found that, under the influence of the Bosch preparation process, the air inflow of the array at the junction is generally larger, which results in a large etching depth, and if the air inflow at the junction can be reduced, the etching condition at the junction can be improved.
Based on the above consideration, the problem that the electric field distribution at the bottom of the device is uneven easily caused by relatively large etching depth generated at the junction of the array formed by the existing three-dimensional trench electrode detection units is solved. According to the design concept and related experimental investigation, the three-dimensional trench electrode detector array and the preparation method thereof are obtained.
First, the present application provides a three-dimensional trench electrode detector array comprising a detection unit; each detection unit comprises a central electrode and a trench electrode; as shown in fig. 6 and 7, the trench electrode includes a first trench wall 11 and a second trench wall 12, where the first trench wall 11 and the second trench wall 12 intersect and form an intersection 13; the intersection 13 has a width in the first direction (coordinate axis x direction) and/or the second direction (coordinate axis y direction), and the first groove wall 11 has a width in the first direction (coordinate axis x direction); the second groove wall 12 has a width along the second direction (coordinate axis y direction);
each width satisfies one or both of the following:
the width of the crossing position is not larger than the width of the first groove wall along the first direction;
in the second direction, the width of the intersection is no greater than the width of the second trench wall.
In this application, the first direction is different from the second direction, and in some embodiments of this application, the first direction refers to the x-direction of the coordinate axis, and the second direction refers to the y-direction of the coordinate axis.
In some embodiments of the present application, the two sides of the first trench wall and the two sides of the second trench wall form the detection units, the detection units form an mxn detector array, M, N are all positive integers, in the embodiments described above, only a 2×2 array is used as an illustration, and other arrays meeting the requirements are also within the scope of protection of the present application.
In the present application, the first trench wall and the second trench wall are any two of a plurality of trench walls forming a trench electrode, and the two trench walls are intersected and arranged and form an intersection at an intersection. And each detection unit of the detector array is formed on two sides of the first groove wall and the second groove wall, and the intersection position is used as a common part of each adjacent detection unit. As can be seen from fig. 8, the common portion includes a first portion 13a, a second portion 13b, a third portion 13c, and a fourth portion 13d, the first portion 13a and the second portion 13b are located at both ends in the first direction (the direction of the coordinate axis x), and the third portion 13c and the fourth portion 13d are located at both ends in the first direction (the direction of the coordinate axis x), wherein a distance between the first portion 13a and the second portion 13b or a distance between the third portion 13c and the fourth portion 13d is a width value of the intersection 13 along the second direction (the direction of the coordinate axis y). Similarly, the distance between the first portion 13a and the third portion 13c or the distance between the second portion 13b and the fourth portion 13d is the width value of the intersection 13 in the first direction (the direction of the coordinate axis x).
In this application, the first groove wall 11 and/or the second groove wall 12 have two opposite surfaces, as shown in fig. 9, and the first groove wall 11 includes a first wall end 11a and a second wall end 11b along a first direction (direction of the coordinate axis x), so that a width of the first groove wall 11 along the first direction (direction of the coordinate axis x) is a distance between the first wall end 11a and the second wall end 11 b.
As can be seen from FIG. 9, taking the width value of the crossing point 13 along the first direction (the direction of the coordinate axis x) as an example, the distance between the second portion 13b and the fourth portion 13d is n 1 The width of the first groove wall 11 in the first direction (coordinate axis x direction) has a value η, satisfying n 1 Not more than eta. The present application also details in some embodiments that the width value of the intersection 13 in the second direction (coordinate axis y direction) is not greater than the width value of the second trench wall in the second direction (coordinate axis y direction).
In the application, by selecting the width of the crossing bit along the first direction (the direction of the coordinate axis x) and/or the width of the second direction (the direction of the coordinate axis y) to be not larger than the width of the first groove wall along the first direction (the direction of the coordinate axis x) and/or the width of the second groove wall along the second direction (the direction of the coordinate axis y), the air inflow of the crossing bit is reduced compared with the existing design mode, and then the etching depth of the crossing bit is also reduced. The probability of the bottom tip of the device at the crossing position is also reduced, and the non-horizontal distribution state of the bottom of the three-dimensional trench electrode detector array is effectively improved. Further improving the uniformity of electric field distribution at the bottom of the device and further improving the collection of electrical signals. In addition, the probability that the electric field concentration causes the device to break down in advance is reduced by raising the breakdown voltage of the detector device.
In some embodiments, the first groove wall or the second groove wall is provided with a first side end which is close to the intersection and a second side end which is far away from the intersection; the width of the first groove wall along the first direction or the width of the second groove wall along the second direction gradually increases when the width extends from the first end to the second side end.
As can be seen from fig. 10, taking the width variation of the first groove wall 11 as an example, the first groove wall 11 has a first side end 11c arranged close to the crossing position and a second side end 11d arranged far from the crossing position, and the width of the first groove wall 11 at the first side end 11c is η 1 The width of the first groove wall 11 at the second side end 11d is eta n The method comprises the following steps: η (eta) 1 ＜η n The width of the first trench wall 11 is from eta 1 To eta n The gradient increases. The variation in the width of the second groove wall 12 is also described in detail in some embodiments.
In some embodiments of the present application, the first trench wall or the second trench wall is provided with a first side end disposed close to the intersection and a second side end disposed away from the intersection; the width of the first groove wall along the first direction and/or the width of the second groove wall along the second direction increases and then decreases in gradient when the width extends from the first side end to the second side end.
As can be seen from fig. 11, taking the width variation of the first groove wall 11 as an example, the first groove wall 11 has a first side end 11c arranged close to the crossing position and a second side end 11d arranged far from the crossing position, and the width of the first groove wall 11 at the first side end 11c is η 1 The width of the first groove wall 11 at the second side end 11d is eta n The width of the first groove wall 11 at a position between the first side end 11c and the second side end 11d is eta x Satisfy eta 1 ＜η x ，η n ＜η x And eta 1 And eta n May be equal or unequal. This application disclosesThe variation in width of the second trench wall 12 is also described in detail in some embodiments.
In some embodiments of the present application, the width of the first groove wall in the first direction and/or the width of the second groove wall in the second direction varies linearly and/or non-linearly as it extends from the first side end to the second side end, further the non-linear variation includes an exponential variation or a logarithmic variation.
The present application illustrates in fig. 10 that the width of the first trench wall and/or the width of the second trench wall varies linearly as it extends from the first side end to the second side end, and in fig. 11 that the width of the first trench wall and/or the width of the second trench wall varies non-linearly as it extends from the first side end to the second side end. Whichever variation is satisfactory, the value of the width of the crossing bit in the first direction or the second direction is relatively small.
In some embodiments, the width of the first groove wall in the first direction and/or the width of the second groove wall in the second direction includes both the linear variation and the nonlinear variation.
In some embodiments of the present application, through holes are provided at the crossing locations. The central axis direction of the through hole coincides with the axial direction of the trench electrode.
The through hole is designed at the crossing position, so that the air inflow of the crossing position can be further reduced.
In some embodiments of the present application, the through-holes include, but are not limited to, any one or two or more of polygonal through-holes, circular through-holes, elliptical through-holes, sector-annular through-holes, cross-shaped through-holes; among them, the polygonal through holes are preferably any one or two or more of triangular through holes, square through holes, or hexagonal through holes.
In some embodiments, the method includes designing the through-holes in a probe array formed with a gradient of increasing width of the first trench wall in the first direction or increasing width of the second trench wall in the second direction extending from the first side end to the second side end. As illustrated in fig. 11.
In some embodiments, the through holes are designed in a probe array formed when the gradient increases and then decreases when the width of the first groove wall in the first direction or the width of the second groove wall in the second direction extends from the first side end to the second side end. As illustrated in fig. 12 and 13.
The application also discloses in some embodiments the design of through holes in a probe array that simultaneously satisfies the above.
The above only enumerates that the partial through holes are formed on the partial crossing positions, other arrangement modes and other shapes of through holes are also within the protection scope of the application, and the number, the position, the size and the like of the through holes need to be combined with each detection unit for detailed design, which is not repeated in the application.
In some embodiments of the present application, the trench electrode is a hollow polygonal cylinder including, but not limited to, any one of a triangular prism, a square, or a hexagonal prism. In the above embodiments, the technical solution of the present application is described in detail by taking a square body as an example, and the design requirements of the present application are also satisfied for a triangular prism or a hexagonal prism.
In some embodiments of the present application, the central electrode and the trench electrode are made of a semiconductor material including, but not limited to Si, ge, gaN, siC, hgI 2 、GaAs、TiBr、CdTe、CdZnTe、CdSe、GaP、HgS、PbI 2 Or one or two or more of AlSb.
In some embodiments, the trench electrode is located at the periphery of the central electrode and forms an internal hollow structure, and an insulator is arranged in the internal hollow structure, and the insulator may be silicon dioxide or other insulating materials.
In addition, the application also provides a preparation method of the three-dimensional trench electrode detector array, which comprises the following steps:
providing a substrate; then etching the substrate to form a central electrode, a trench electrode and a substrate; and the central electrode and the trench electrode are heavily doped by adopting an ion diffusion or in-situ doping mode, and the substrate is lightly doped.
Specifically, etching the groove wall of the groove electrode to form a first groove wall and a second groove wall, wherein the first groove wall and the second groove wall are intersected and arranged and form an intersection position at the intersection position; continuing etching to ensure that the width of the crossing position along the first direction and/or the second direction is not larger than the width of the first groove wall along the first direction and/or the width of the second groove wall along the second direction; etching the insides of the first groove wall and the second groove wall to form a central electrode; an insulator is embedded between the center electrode and the trench wall.
In some embodiments of the present application, the processes such as in-situ doping or ion diffusion are all in any conventional form in the art, and are not described in detail herein.
In some embodiments of the application, the deep silicon etch process comprises a Bosch process. Wherein the Bosch process is in any conventional form in the art and is not described in detail herein.
In some embodiments of the application, the substrate material includes, but is not limited to, a silicon substrate.
In some embodiments of the application, the substrate is a silicon substrate including, but not limited to, ultra-pure high resistance silicon, epitaxial silicon, or SOI, among others.
Fig. 14 is a model built by the detection unit of the present application, and fig. 15 and 16 are simulation results using a conventional simulation mode in the art, such as TACD, and as can be seen in conjunction with fig. 14, fig. 15 and 16, the optimal drift plane of the detector array of the present application is a horizontal plane perpendicular to the electrodes. It can be seen that when the angle of the bottom theta is large, the electric field and the electric potential at the bottom of the detector are unevenly distributed, the carrier collection speed is slowed down, and the charge collection is reduced. As tan (θ) decreases, it can be found that both the electric field and the electric potential distribution are gradually uniform, and the uniformity from top to bottom is improved. Again, this demonstrates a significant effect on the overall device performance by improving the non-horizontal structure at the bottom of the array.
Therefore, the non-horizontal distribution state of the bottom of the three-dimensional trench electrode detector array is effectively improved. The electric field distribution uniformity at the bottom of the device is improved, and the collection of electric signals is further improved. Therefore, the detector array designed by the application has good application prospect in the fields of aerospace, deep space exploration, universe exploration, important physical experiments, medicine, X-ray imaging, military industry and the like.
It is to be understood that the terminology used herein is for the purpose of describing particular example embodiments only, and is not intended to be limiting. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. The terms "comprises," "comprising," "includes," "including," and "having" are inclusive and therefore specify the presence of stated features, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, steps, operations, elements, components, and/or groups thereof. The method steps, processes, and operations described herein are not to be construed as necessarily requiring their performance in the particular order described or illustrated, unless an order of performance is explicitly stated. It should also be appreciated that additional or alternative steps may be used. The foregoing is merely a preferred embodiment of the present application, but the scope of the present application is not limited thereto, and any changes or substitutions easily contemplated by those skilled in the art within the technical scope of the present application should be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (10)
1. A three-dimensional trench electrode detector array, the array comprising a detection unit; each detection unit comprises:
a center electrode;
a trench electrode: the device comprises a first groove wall and a second groove wall, wherein the first groove wall and the second groove wall are intersected and arranged, and an intersection position is formed at the intersection position;
the intersection has a width along a first direction and/or a second direction, and the first groove wall has a width along the first direction; the second groove wall has a width along a second direction;
each width satisfies one or both of the following:
the width of the crossing bit is not greater than the width of the first groove wall along the first direction;
the width of the crossing bit is not greater than the width of the second groove wall along the second direction;
the first direction is different from the second direction.
2. The array of claim 1, wherein the first trench wall and/or the second trench wall has a first side end disposed proximate to the intersection and a second side end disposed distal to the intersection;
the width of the first groove wall along the first direction and/or the width of the second groove wall along the second direction increases in a gradient manner when the width extends from the first side end to the second side end.
3. The array of claim 1, wherein the first trench wall and/or the second trench wall has a first side end disposed proximate to the intersection and a second side end disposed distal to the intersection;
the width of the first groove wall along the first direction and/or the width of the second groove wall along the second direction is increased in gradient and then reduced in gradient when the width of the first groove wall along the first direction and/or the width of the second groove wall along the second direction extend from the first side end to the second side end.
4. An array according to claim 2 or 3, wherein the width of the first trench wall in a first direction and/or the width of the second trench wall in a second direction varies linearly and/or non-linearly as it extends from the first side end to the second side end,
preferably, the nonlinear variation comprises an exponential variation or a logarithmic variation.
5. The array of any of claims 1-3, wherein both sides of the first trench wall and both sides of the second trench wall form the detection units, the detection units comprise an mxn detector array, and M, N is a positive integer.
6. An array according to any one of claims 1 to 3, wherein the intersecting locations are provided with through holes;
preferably, the central axis direction of the through hole coincides with the axial direction of the trench electrode;
preferably, the through hole is any one or more than two of a polygonal through hole, a circular through hole, an elliptic through hole, a fan-shaped through hole and a cross-shaped through hole;
the polygonal through holes are preferably any one or more than two of triangular through holes, square through holes or hexagonal through holes.
7. The array of any one of claims 1-3, wherein the trench electrode is a hollow polygonal cylinder, the polygonal cylinder being any one of a triangular prism, a square, or a hexagonal prism.
8. The detector array of any of claims 1-3, wherein the center electrode and the trench electrode are made of a semiconductor material that is Si, ge, gaN, siC, hgI 2 、GaAs、TiBr、CdTe、CdZnTe、CdSe、GaP、HgS、PbI 2 Or one or more of AlSb.
9. A method of making a three-dimensional trench electrode detector array, the method comprising:
providing a substrate;
etching the substrate to form a first groove wall and a second groove wall, wherein the first groove wall and the second groove wall are intersected and arranged and form an intersection position at the intersection position;
continuing etching to enable the width of the crossing position along the first direction and/or the second direction to be not larger than the width of the first groove wall along the first direction and/or the width of the second groove wall along the second direction;
etching the inside of a detection unit formed by the first groove wall and the second groove wall to form a central electrode;
an insulator is embedded between the center electrode and the trench wall.
10. The method of claim 9, wherein the etching comprises a deep silicon etching process comprising a Bosch process.
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