CN117577547A - Chip packaging bonding method with improved stability and RF amplifier - Google Patents

Chip packaging bonding method with improved stability and RF amplifier Download PDF

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Publication number
CN117577547A
CN117577547A CN202311617202.6A CN202311617202A CN117577547A CN 117577547 A CN117577547 A CN 117577547A CN 202311617202 A CN202311617202 A CN 202311617202A CN 117577547 A CN117577547 A CN 117577547A
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China
Prior art keywords
capacitor
inductor
chip
output
amplifier
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CN202311617202.6A
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Chinese (zh)
Inventor
冯志成
张培
程晨
房爱兵
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Jiangsu Xinyun Electronic Technology Co ltd
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Jiangsu Xinyun Electronic Technology Co ltd
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Priority to CN202311617202.6A priority Critical patent/CN117577547A/en
Publication of CN117577547A publication Critical patent/CN117577547A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/12—Bandpass or bandstop filters with adjustable bandwidth and fixed centre frequency
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6644—Packaging aspects of high-frequency amplifiers
    • H01L2223/6655—Matching arrangements, e.g. arrangement of inductive and capacitive components
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Amplifiers (AREA)

Abstract

The invention discloses a chip packaging bonding method with improved stability and an RF amplifier, which relate to the technical field of RF amplifiers and solve the technical problems of high complexity and high cost of improving the stability of an RF chip outside a wafer, and the technical scheme is characterized in that the self-excitation problem of a power amplifier in the RF chip is eliminated by properly controlling the GND bonding wire length of the RF chip; the GND bonding wire is punched back to the E-PAD, so that the ESD grade of the RF chip is not obviously reduced, and the completeness of electrostatic protection of the chip in the production, test and transportation processes is ensured; the structures of the output impedance matching network and the output band-pass filter network are optimized, so that the input impedance of the network is inductive, and the stability of the amplifier is further enhanced. The whole method is simple, the effect is obvious, the cost is not increased, and the problem chip is solved.

Description

Chip packaging bonding method with improved stability and RF amplifier
Technical Field
The present disclosure relates to the field of RF amplifier technologies, and in particular, to a chip package bonding method with improved stability and an RF amplifier.
Background
In the design of an RF integrated circuit, the stability of the amplifier is critical, and if the designed amplifier layout has potential instability, once the current is finished, the stability is improved by modifying the layout, so that the technical difficulty is greatly increased and the cost is intolerable.
RF integrated circuit designs span 2 technical areas, one being microelectronics technology and the other being radio frequency technology. The microelectronic technology pays attention to a more focused path, simulation is based on SPICE, modeling of distributed parameters is not perfect enough, input/output quantity of a circuit is voltage and current, stability of an amplifier is estimated through voltage gain, phase margin, time domain waveform and the like, and larger uncertainty exists; the radio frequency technology focuses on 'waves', simulation is based on ADS, the influence of distribution parameters is fully integrated, the input/output quantity of a circuit is incident waves and reflected waves, the stability of an amplifier is judged through a stability factor, a stable region and an unstable region can be obtained, and the accuracy is high.
In general, without the ADS model of the device, it is difficult to accurately judge the stability of the amplifier after the back-end placement and routing is completed, and thus, unexpected or critical self-excitation may occur in the amplifier after the flow sheet is completed. In order to save costly RF chips, parasitic parameters can only be modified on the package, or the chip is compensated for by optimizing the input/output network off-chip, so that self-excitation can be eliminated.
In the RF technical field, the K-factor method is commonly used for evaluating the stability of an RF amplifier, and the requirement for the stability of the RF amplifier is expressed as:
|Δ|＝|S 11 S 22 -S 12 S 21 is < 1, and
stability is divided into three cases: unstable, stable conditions, and absolute stability. Unstable means that the input/output terminal is connected with impedance (R+ -jX) of any property, and the amplifier is unstable; the stable condition means that the input/output end is connected with the impedance of some areas, the amplifier is unstable, but is connected with the impedance of other areas, and the amplifier is stable; absolute stability means that the input/output terminal is connected to load impedance of any nature and the amplifier is stable.
In practical engineering, there is a certain difficulty in achieving absolute stability, and as a commercially available RF device, at least an impedance region within Smith chart |Γ|=0.85 should be ensured, and the amplifier is stable.
The method for improving the stability of the RF amplifier is roughly as follows: 1) The grid is connected with a small resistor in series, and the grid is connected with a resistor in parallel to the ground; 2) Introducing negative feedback; 3) Optimizing a matching network; 4) Increasing reverse isolation; 5) PA devices with high stability factors are replaced.
The grid is connected with a small resistor in series and a resistor in parallel to absorb echo, reduce the available gain of the device and pull the unstable region out of the unit circle. The purpose of introducing negative feedback and optimizing the matching network is to reduce the echoes (S11|) and (S22|) so as to increase the numerator of the K factor calculation formula and make the K factor as large as possible. The purpose of increasing the reverse isolation is to reduce |s12| to reduce the denominator of the K-factor calculation formula and increase the K-factor. The PA device with high stability factor is replaced, so that the matching difficulty can be reduced, and the stability area is as large as possible.
Of the above several methods, methods 1), 5) can only be used in the design iteration stage, and once the sheet is streamed, it is not applicable; method 2) is also typically used in the design iteration stage, unless it is embodied in the use of package parasitic parameters; the method 3) can be used in a design iteration stage and also can be used after the streaming; the method 4) is mostly adopted after the wafer is flowed, but an isolation device is required to be added, and the cost is increased. After the sheet is flowed, the method 2) and 3) are the preferred schemes from the viewpoint of low cost, but the method is only stable for the condition and solves the problem of instability in unit circle.
However, the above method has difficulty in solving the stability problem of the amplifier outside the wafer alone. After the RF chip, especially the complex Transceiver chip, is streamed, if the test finds that the RF amplifier is unstable, then improvement measures must be taken to ensure the normal operation of the chip. If the stability is improved by modifying the layout Mask, the complexity is high, the cost is high, and the success cannot be ensured once. Therefore, solving the stability problem outside the wafer would be the preferred solution.
Disclosure of Invention
The application provides a chip packaging bonding method with improved stability and an RF amplifier, and the technical purpose is to solve the problem of instability of an RF chip in a simple and quick way at low cost through proper packaging bonding and a special impedance network outside a chip after chip flowing, and the application cost of the chip is not obviously increased.
The technical aim of the application is achieved through the following technical scheme:
a method of chip package bonding with improved stability, comprising: bonding a PAD structure corresponding to the GND end of the amplifier in the RF wafer to a pin of the packaging frame, and then turning back from the pin of the packaging frame to the E-PAD of the packaging frame to complete the packaging of the RF chip.
An RF amplifier with improved stability, the RF amplifier includes an RF chip, an output impedance matching network and an output bandpass filter network, the RF chip is obtained by packaging by the chip packaging bonding method of claim 1, an output pin of the RF chip is connected with the output impedance matching network, and the output impedance matching network outputs to the output bandpass filter network; when the unstable region of the RF chip is lower than the working frequency band, the output band-pass filter network comprises a chebyshev band-pass filter and an elliptic low-pass filter which are in a cascaded parallel-serial structure; when the unstable region of the RF chip is higher than the working frequency band, the output band-pass filter network comprises a chebyshev band-pass filter and an elliptic low-pass filter with cascaded series-parallel series structures.
Further, the output impedance matching network is an L/C low-pass type matching network or an all-pass type L matching network.
Further, when the unstable region of the RF chip is lower than the operating frequency band, the output bandpass filter network includes a first inductor, a second inductor, a third inductor, a fourth inductor, a first capacitor, a second capacitor, a third capacitor, a fourth capacitor and a fifth capacitor, where the first inductor, the second inductor, the third inductor, the first capacitor, the second capacitor and the third capacitor form a chebyshev bandpass filter with a parallel-serial structure, and the fourth inductor, the third capacitor, the fourth capacitor and the fifth capacitor form an elliptic low-pass filter;
the output end of the output impedance matching network is connected to the input end of the chebyshev band-pass filter with the parallel-serial structure, the output end of the output impedance matching network is connected with the first inductor, the second inductor and the first capacitor, one end of the first inductor and one end of the first capacitor are grounded, the other end of the first inductor and one end of the first capacitor are connected in parallel and are connected with the second inductor, the second inductor and the second capacitor are connected in series, one end of the third inductor and one end of the third capacitor are grounded, the other end of the third inductor and one end of the third capacitor are connected in parallel and are connected with the second capacitor, the fourth capacitor and the fourth inductor; the second capacitor is connected with the fourth capacitor and the fourth inductor;
one end of the fifth capacitor is grounded, the other end of the fifth capacitor is connected with the fourth capacitor and the fourth inductor, the fourth capacitor is connected with the fourth inductor in parallel, and the fourth capacitor, the fourth inductor and the fifth capacitor are connected with the output end.
Further, when the unstable region of the RF chip is higher than the operating frequency band, the output band-pass filter network includes a first inductor, a second inductor, a third inductor, a fourth inductor, a first capacitor, a second capacitor, a third capacitor, a fourth capacitor, a fifth capacitor and a sixth capacitor, where the first inductor, the second inductor, the third inductor, the first capacitor, the second capacitor and the third capacitor form a chebyshev band-pass filter with a "serial-parallel serial" structure, and the fourth inductor, the fourth capacitor, the fifth capacitor and the sixth capacitor form an elliptic low-pass filter;
the output end of the output impedance matching network is connected to the input end of the chebyshev band-pass filter with the serial-parallel structure, the output end of the output impedance matching network is connected to the first inductor, the first inductor is connected in series with the first capacitor, one ends of the second inductor and the second capacitor are grounded, the other ends of the second inductor and the second capacitor are connected in parallel and are connected with the first capacitor and the third inductor, the third inductor and the third capacitor are connected in series, and the third capacitor is connected with the fourth capacitor, the fourth inductor and the sixth capacitor;
one end of the fifth capacitor is grounded, the other end of the fifth capacitor is connected with the fourth capacitor and the fourth inductor, one end of the sixth capacitor is grounded, the other end of the sixth capacitor is connected with the third capacitor, the fourth capacitor and the fourth inductor, the fourth inductor and the fourth capacitor are connected in parallel, and the fourth capacitor, the fourth inductor and the fifth capacitor are connected with the output end.
The beneficial effects of this application lie in: according to the chip packaging bonding method with the improved stability and the RF amplifier, the self-excitation problem of the power amplifier in the RF chip is eliminated by properly controlling the GND bonding wire length of the RF chip; the GND bonding wire is punched back to the E-PAD, so that the ESD grade of the RF chip is not obviously reduced, and the completeness of electrostatic protection of the chip in the production, test and transportation processes is ensured; the structures of the output impedance matching network and the output band-pass filter network are optimized, so that the input impedance of the network is inductive, and the stability of the amplifier is further enhanced. The whole method is simple, the effect is obvious, the cost is not increased, and the problem chip is solved.
Drawings
FIG. 1 is a schematic diagram of bonding of a GND package of an RF chip in an embodiment of the present application;
FIG. 2 is a schematic diagram of an output impedance matching network according to an embodiment of the present application;
FIG. 3 is a schematic diagram of an output bandpass filter network with a parallel-serial structure in an embodiment of the present application;
FIG. 4 is a schematic diagram of an output bandpass filter network with a serial-parallel-serial structure according to an embodiment of the present application;
FIG. 5 is a schematic diagram of an input impedance model of a MOSFET amplifier according to an embodiment of the present application;
FIG. 6 is a schematic diagram of a source impedance model according to an embodiment of the present application;
FIG. 7 is a schematic diagram of a Cascode amplifier model according to an embodiment of the present application;
FIG. 8 is a schematic diagram of parasitic parametric model of a MOSFET amplifier according to an embodiment of the present application;
FIG. 9 is a schematic diagram of impedance curves of a low-pass network at Smith chart in an embodiment of the application;
FIG. 10 is a schematic diagram of an embodiment of the GND bonding wire of the RF chip in the embodiment of the application;
FIG. 11 is a schematic diagram of an embodiment of an output bandpass filter network according to the embodiments of the present application;
FIG. 12 is a schematic diagram of a transmission curve of an output bandpass filter network according to an embodiment of the present application;
fig. 13 is a schematic diagram of impedance curves of an output bandpass filter network according to an embodiment of the disclosure.
Detailed Description
The technical scheme of the application will be described in detail below with reference to the accompanying drawings.
In the prior art, a PAD (pad_gnd) corresponding to the GND end of an amplifier in a wafer (Die) is mostly bonded to an E-PAD of a package frame, and the package bonding wire length AB is very short. To eliminate self-excitation, the bonding wires are instead bonded to PINs (PINs) of the package frame and folded back to the E-PAD, i.e., the bonding wires are extended to ac+cb. Through oblique line bonding and foldback bonding, parasitic inductance of the GND transition wire is increased, so that enough negative feedback quantity is introduced, as shown in fig. 1.
After the RF chip is packaged and bonded in the mode, the output pins are connected to an output impedance matching network, and the output impedance matching network is connected to an output band-pass filter network. The output impedance matching network adopts an L/C low-pass type matching network or an all-pass type L matching network, as shown in figure 2.
When the unstable region of the RF chip is located at the low frequency end (below the operating frequency band), the output bandpass filter network includes a chebyshev bandpass filter and an elliptical low-pass filter in a cascaded "parallel-to-serial" configuration, as shown in fig. 3. When the unstable region of the RF chip is higher than the operating frequency band, the output band-pass filter network includes a chebyshev band-pass filter and an elliptic low-pass filter in a cascaded "serial-to-parallel-serial" structure, as shown in fig. 4.
The principle of operation of the RF amplifier described above will be explained as follows:
(1) Stability analysis:
MOSFET amplifier as shown in fig. 5Input impedance model of amplifier, R g 、L g Is the parasitic resistance and parasitic inductance of the grid electrode, Z s Can be regarded as the source degeneration impedance of the MOSFET.
Seen from the gate to the MOSFET, the input impedance is:
if Z s Is capacitive, Z s ＝1/(jωC s ) The following steps are:
when R is g <g m /(ω 2 C gs C s )，Z in Negative resistance occurs in the real part. On the Smith original graph, the negative resistance point is located outside the unit circle, and the reflection coefficient is |Γ||>1. The presence of negative resistance means that the amplifier becomes a negative resistance oscillator.
If Z s Is sensitive to Z s ＝jωL s The following steps are:
it can be seen that Z s Is perceptively rendered Z in The real part is greater than 0, which provides a necessary condition for amplifier stability.
(2) Source equivalent impedance:
the source impedance model is shown in FIG. 6, R s Represents the path resistance from the source to GND, C s Representing parasitic capacitance of the path L p Representing the package bond wire parasitic inductance.
Then Z is s The method comprises the following steps:
it can be seen that when L p <C s R s 2 /[1+(ωC s R s ) 2 ]，Z s In this case, the amplifier is likely to be self-excited. To get rid of the potential instability risk, L must be satisfied p >C s R s 2 /[1+(ωC s R s ) 2 ]But L is p Too large, the gain of the amplifier is reduced, so L p Is appropriately sized.
A common Cascode amplifier for RF, L as shown in fig. 7 p The parasitic inductance of the GND line is represented, the drain output impedance of T1 is the source input impedance of T2, and the stability of T2 also accords with the rule.
(3) Encapsulation bonding
The diameter of the wire is D, the length is b, and the parasitic inductance L is approximately:
wherein mu 0 Represents vacuum permeability, and μ 0 =0.4pi nH/mm. The resistivity of the copper wire was ρ=1.75x10 -8 Omega-m, and wire body resistance R=4ρ/(pi D) with wire diameter D 2 ). Copper wire with wire diameter of 17 μm, bulk resistance R is about 77mΩ/mm, parasitic inductance L is about 0.94nH/mm.
Generally, the size of the RF chip is small, the length of the packaging bonding wire is 0.5-2 mm, the bulk resistance is negligible relatively, and the influence of parasitic inductance is not negligible.
(4) Parasitic parameters
Since parasitic capacitance exists between the three electrodes of the MOSFET as shown in FIG. 8, the load Z L Will pass through parasitic C ds Affecting the source end if Z L The capacitive source impedance of the MOSFET is pulled in the capacitive direction.
(5) Output impedance matching network
The impedance curve of the low-pass matching network is shown in fig. 9, if the parameters are proper, the impedance can be inductive, and the impedance of the all-pass matching network is inductive in the full frequency band.
(6) Output bandpass filter network
The chebyshev band-pass filter with parallel-serial structure is cascaded with elliptic low-pass filters, and the L/C network structure presents inductance at the low-end impedance of frequency. The chebyshev band-pass filter with the serial-parallel serial structure is cascaded with an elliptic low-pass filter, and the L/C network structure presents inductance at the high-end impedance of frequency.
In the embodiment of the application, if the RF chip PAD-GND is directly bonded to the E-PAD, the path AB is about 0.5mm, and the amplifier is self-excited in the frequency range of 180-300 MHz.
The output impedance matching network is changed into a low-pass L/C network, the GND bonding wire is changed into an AC (1.1 mm), after passing through the PIN of the packaging frame, a Via hole (Via) is punched on the PCB to be connected to the reference layer, and the path length from the PAD-GND to the reference layer is about 1.8mm, so that the self excitation is eliminated. Before the chip is soldered, to maintain the integrity of the chip pin ESD loop, the chip GND is folded back to the E-PAD of the package frame through two sections of copper wires AC, CB, as shown in fig. 10.
The packaging frame PIN corresponding to the point C can be suspended and also can be connected with the PCB circuit GND, because the point B and the point C are connected with the reference layer, the parasitic inductance of the bonding wire BC is short-circuited, and no extra negative feedback is generated.
Taking the output band-pass filter as a band-pass filter with a cascading elliptic structure of a parallel-serial chebyshev structure as an example, as shown in fig. 11, the passband range covers 400-600 MHz, the input impedance is inductive below 450MHz, and the frequency characteristics are shown in fig. 12 and 13.
The foregoing is an exemplary embodiment of the present application, the scope of which is defined by the claims and their equivalents.

Claims (5)

1. A method of bonding a chip package with improved stability, comprising: bonding a PAD structure corresponding to the GND end of the amplifier in the RF wafer to a pin of the packaging frame, and then turning back from the pin of the packaging frame to the E-PAD of the packaging frame to complete the packaging of the RF chip.
2. An RF amplifier with improved stability, characterized in that the RF amplifier comprises an RF chip, an output impedance matching network and an output bandpass filter network, the RF chip is obtained by packaging by the chip packaging bonding method according to claim 1, an output pin of the RF chip is connected with the output impedance matching network, and the output impedance matching network outputs to the output bandpass filter network; when the unstable region of the RF chip is lower than the working frequency band, the output band-pass filter network comprises a chebyshev band-pass filter and an elliptic low-pass filter which are in a cascaded parallel-serial structure; when the unstable region of the RF chip is higher than the working frequency band, the output band-pass filter network comprises a chebyshev band-pass filter and an elliptic low-pass filter with cascaded series-parallel series structures.
3. The RF amplifier of claim 2, wherein the output impedance matching network is an L/C low-pass type matching network or an all-pass type L matching network.
4. The RF amplifier of claim 2, wherein the output bandpass filter network comprises a first inductor, a second inductor, a third inductor, a fourth inductor, a first capacitor, a second capacitor, a third capacitor, a fourth capacitor, and a fifth capacitor, the first inductor, the second inductor, the third inductor, the first capacitor, the second capacitor, and the third capacitor comprising a chebyshev bandpass filter of a "parallel-serial" configuration, the fourth inductor, the third capacitor, the fourth capacitor, and the fifth capacitor comprising an elliptical low-pass filter;
the output end of the output impedance matching network is connected to the input end of the chebyshev band-pass filter with the parallel-serial structure, the output end of the output impedance matching network is connected with the first inductor, the second inductor and the first capacitor, one end of the first inductor and one end of the first capacitor are grounded, the other end of the first inductor and one end of the first capacitor are connected in parallel and are connected with the second inductor, the second inductor and the second capacitor are connected in series, one end of the third inductor and one end of the third capacitor are grounded, the other end of the third inductor and one end of the third capacitor are connected in parallel and are connected with the second capacitor, the fourth capacitor and the fourth inductor; the second capacitor is connected with the fourth capacitor and the fourth inductor;
one end of the fifth capacitor is grounded, the other end of the fifth capacitor is connected with the fourth capacitor and the fourth inductor, the fourth capacitor is connected with the fourth inductor in parallel, and the fourth capacitor, the fourth inductor and the fifth capacitor are connected with the output end.
5. The RF amplifier of claim 2, wherein the output bandpass filter network comprises a first inductor, a second inductor, a third inductor, a fourth inductor, a first capacitor, a second capacitor, a third capacitor, a fourth capacitor, a fifth capacitor, and a sixth capacitor, the first inductor, the second inductor, the third inductor, the first capacitor, the second capacitor, and the third capacitor comprising a chebyshev bandpass filter of a "serial-to-parallel" configuration, the fourth inductor, the fourth capacitor, the fifth capacitor, and the sixth capacitor comprising an elliptical low-pass filter;
the output end of the output impedance matching network is connected to the input end of the chebyshev band-pass filter with the serial-parallel structure, the output end of the output impedance matching network is connected to the first inductor, the first inductor is connected in series with the first capacitor, one ends of the second inductor and the second capacitor are grounded, the other ends of the second inductor and the second capacitor are connected in parallel and are connected with the first capacitor and the third inductor, the third inductor and the third capacitor are connected in series, and the third capacitor is connected with the fourth capacitor, the fourth inductor and the sixth capacitor;
one end of the fifth capacitor is grounded, the other end of the fifth capacitor is connected with the fourth capacitor and the fourth inductor, one end of the sixth capacitor is grounded, the other end of the sixth capacitor is connected with the third capacitor, the fourth capacitor and the fourth inductor, the fourth inductor and the fourth capacitor are connected in parallel, and the fourth capacitor, the fourth inductor and the fifth capacitor are connected with the output end.
CN202311617202.6A 2023-11-30 2023-11-30 Chip packaging bonding method with improved stability and RF amplifier Pending CN117577547A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202311617202.6A CN117577547A (en) 2023-11-30 2023-11-30 Chip packaging bonding method with improved stability and RF amplifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202311617202.6A CN117577547A (en) 2023-11-30 2023-11-30 Chip packaging bonding method with improved stability and RF amplifier

Publications (1)

Publication Number Publication Date
CN117577547A true CN117577547A (en) 2024-02-20

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CN202311617202.6A Pending CN117577547A (en) 2023-11-30 2023-11-30 Chip packaging bonding method with improved stability and RF amplifier

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