CN117577371A - Isotope battery and method for manufacturing isotope battery - Google Patents
Isotope battery and method for manufacturing isotope battery Download PDFInfo
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- CN117577371A CN117577371A CN202311545322.XA CN202311545322A CN117577371A CN 117577371 A CN117577371 A CN 117577371A CN 202311545322 A CN202311545322 A CN 202311545322A CN 117577371 A CN117577371 A CN 117577371A
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- 238000000034 method Methods 0.000 title claims description 25
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000004065 semiconductor Substances 0.000 claims abstract description 179
- 239000012535 impurity Substances 0.000 claims abstract description 58
- 230000005855 radiation Effects 0.000 claims abstract description 46
- 230000002285 radioactive effect Effects 0.000 claims abstract description 36
- 238000009377 nuclear transmutation Methods 0.000 claims abstract description 31
- 238000010361 transduction Methods 0.000 claims abstract description 26
- 230000026683 transduction Effects 0.000 claims abstract description 25
- 238000006243 chemical reaction Methods 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims description 37
- 239000000463 material Substances 0.000 claims description 26
- 230000001678 irradiating effect Effects 0.000 claims description 15
- 229910002601 GaN Inorganic materials 0.000 claims description 12
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 230000002194 synthesizing effect Effects 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 6
- 238000010521 absorption reaction Methods 0.000 abstract description 5
- 230000008859 change Effects 0.000 abstract description 4
- 230000007246 mechanism Effects 0.000 abstract description 4
- 238000002360 preparation method Methods 0.000 abstract description 4
- 230000004907 flux Effects 0.000 description 5
- 239000002253 acid Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004943 liquid phase epitaxy Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21H—OBTAINING ENERGY FROM RADIOACTIVE SOURCES; APPLICATIONS OF RADIATION FROM RADIOACTIVE SOURCES, NOT OTHERWISE PROVIDED FOR; UTILISING COSMIC RADIATION
- G21H1/00—Arrangements for obtaining electrical energy from radioactive sources, e.g. from radioactive isotopes, nuclear or atomic batteries
- G21H1/06—Cells wherein radiation is applied to the junction of different semiconductor materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to the technical field of isotopes and discloses an isotope battery and a preparation method of the isotope battery, wherein the isotope battery comprises a transduction unit, the transduction unit comprises a first N-type semiconductor, and a first radioactive source and a first N-type impurity obtained by neutron transmutation are doped in the first N-type semiconductor. The isotope battery couples the first radiation source and the transduction unit together by utilizing neutron transmutation technology, so that the first radiation source and the transduction unit are of an integrated structure, i.e. no physical structural distinction limit exists between the first radiation source and the transduction unit. Further, the first N-type semiconductor can solve the problem that the energy conversion efficiency is low due to the absorption effect of the radiation source of the isotope battery, the problem that the volume and the weight of the isotope battery are increased due to the stacking mechanism formed between the radiation source and the transduction unit, and the problem that the local resistance change is large due to low power density and uneven doping.
Description
Technical Field
The invention relates to the technical field of isotopes, in particular to an isotope battery and a preparation method of the isotope battery.
Background
A radiovolt isotope battery is a device that produces voltage and current by exciting electron-hole pairs in a semiconductor with radiation generated by radioisotope decay. Conventional isotope battery structures are mostly composed of a radiation source and a semiconductor transducer element, and the radiation source may be a sheet structure covering the surface of the transducer element or a groove or other geometric shape embedded in the semiconductor transducer element. The independent structure of the radioactive source and the transducer element makes the radiation volt isotope battery have two major challenges in terms of energy conversion efficiency and volume power density. Firstly, the self-absorption effect of the radioactive source is obvious, about 50% of energy is absorbed by the radioactive source, so that the energy conversion efficiency is greatly reduced; and secondly, the volume is increased due to mutual superposition of the radioactive source and the energy conversion device, the energy density of the unit volume is difficult to be improved, and the device cannot adapt to certain application scenes with special requirements on the volume or the weight.
In the related art, how to improve the adaptability between the radiation source and the semiconductor transducer device is a technical problem to be solved by those skilled in the art.
Disclosure of Invention
The present invention aims to solve at least one of the technical problems in the related art to some extent. To this end, embodiments of the present invention provide an isotope battery and a method of manufacturing the isotope battery that couple a first radiation source and a transduction unit together using neutron transmutation techniques such that the first radiation source and the transduction unit are of an integrated structure, i.e., no physical structural distinction is made therebetween. Further, the first N-type semiconductor can solve the problem that the energy conversion efficiency is low due to the absorption effect of the radiation source of the isotope battery, the problem that the volume and the weight of the isotope battery are increased due to the stacking mechanism formed between the radiation source and the transduction unit, and the problem that the local resistance change is large due to low power density and uneven doping.
The isotope battery of the present invention includes:
the energy conversion unit comprises a first N-type semiconductor, and a first radioactive source and a first N-type impurity obtained by neutron transmutation are doped in the first N-type semiconductor.
According to the isotope battery provided by the invention, the first radioactive source and the transduction unit are coupled together by utilizing a neutron transmutation technology, namely, elements in the first N-type semiconductor are simultaneously transmuted into the first radioactive source and the first N-type impurity by utilizing the neutron transmutation technology, so that the first radioactive source and the transduction unit are in an integrated structure, namely, no physical structural distinction limit exists between the first radioactive source and the transduction unit. Further, the first N-type semiconductor can solve the problem that the energy conversion efficiency is low due to the absorption effect of the radiation source of the isotope battery, the problem that the volume and the weight of the isotope battery are increased due to the stacking mechanism formed between the radiation source and the transduction unit, and the problem that the local resistance change is large due to low power density and uneven doping. Specifically, the first radiation source and the transducer element are integrated into a whole, that is, the first radiation source is uniformly distributed in the first N-type semiconductor, so that energy loss in the energy conversion process can be reduced, and the energy conversion efficiency of the integrated isotope battery is higher compared with a structure that the radiation source and the transducer element are mutually independent. At the same time, the integrated isotope battery has a smaller volume and weight and is easier to integrate into various devices and systems. In addition, because the first N-type semiconductor and the energy conversion device are tightly combined together, the risk of leakage of the radioactive source can be effectively reduced, the safety problem caused by the failure or leakage of the radioactive source can be further effectively avoided, and the safety in use is improved.
Optionally, the substrate of the first N-type semiconductor includes at least one of a silicon nitride substrate and a gallium nitride substrate.
Optionally, the transduction unit further comprises a second N-type semiconductor located on the first N-type semiconductor, wherein a second radiation source and a second N-type impurity obtained by neutron transmutation are doped in the second N-type semiconductor, and the concentration of the second N-type impurity is larger than or smaller than that of the first N-type impurity.
Optionally, the substrate of the second N-type semiconductor includes at least one of silicon nitride and gallium nitride.
The preparation method of the isotope battery comprises the following steps:
step S100: irradiating a preset substrate for a preset time by using a neutron transmutation doping method so as to generate a preset N-type semiconductor;
wherein the preset substrate comprises at least one of silicon nitride and gallium nitride;
step S200: and preparing a P-type semiconductor doped with P-type impurities on the preset N-type semiconductor.
Optionally, in step S100, the preset time includes a first preset time greater than or equal to a threshold time and a second preset time less than the threshold time;
based on the first preset time, the preset N-type semiconductor is a first preset N-type semiconductor, wherein the concentration of the radioactive source and the concentration of the N-type impurity in the first preset N-type semiconductor reach peak values;
based on the second preset time, the preset N-type semiconductor is a second preset N-type semiconductor, wherein the concentration of the radioactive source and the concentration of the N-type impurity in the second preset N-type semiconductor do not reach the peak value.
Optionally, the preset substrates include a first preset substrate and a second preset substrate, and the step S100 includes:
irradiating the first preset base material for the first preset time by utilizing a neutron transmutation doping method so as to generate the first preset N-type semiconductor;
irradiating the second preset base material for the second preset time by using a neutron transmutation doping method so as to generate a second preset N-type semiconductor;
and synthesizing the first preset N-type semiconductor and the second preset N-type semiconductor into a whole, wherein in step S200, the P-type semiconductor is positioned on the second preset N-type semiconductor.
Optionally, the preset substrates include a first preset substrate and a second preset substrate, and the step S100 includes:
irradiating the first preset base material for the second preset time by using a neutron transmutation doping method so as to generate the first preset N-type semiconductor;
irradiating the second preset base material by using a neutron transmutation doping method according to the time shorter than the second preset time, so as to generate a second preset N-type semiconductor;
and synthesizing the first preset N-type semiconductor and the second preset N-type semiconductor into a whole, wherein in step S200, the P-type semiconductor is positioned on the second preset N-type semiconductor.
Optionally, after step S100, thinning the preset N-type semiconductor to a first preset thickness; and/or
After step S200, the P-type semiconductor is thinned to a second predetermined thickness.
Optionally, in step S200, the P-type semiconductor of the P-type semiconductor doped with the P-type impurity prepared on the preset N-type semiconductor is replaced with a metal layer.
Drawings
Fig. 1 is a schematic diagram of an isotope battery in accordance with an embodiment of the present invention.
Fig. 2 is another schematic diagram of an isotope battery in an embodiment of the invention.
Reference numerals: 1000-isotope battery, 100-transduction unit, 110-first N-type semiconductor, 111-first radioactive source, 112-first N-type impurity, 120-P-type semiconductor, 200-electrode, 300-metal layer.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings. The embodiments described below by referring to the drawings are illustrative and intended to explain the present invention and should not be construed as limiting the invention.
An isotope battery 1000 of an embodiment of the present invention is described below with reference to the accompanying drawings. As shown in fig. 1 and 2, the isotope battery 1000 includes a transduction unit 100.
The transduction unit 100 includes a first N-type semiconductor 110, and a first radiation source 111 and a first N-type impurity 112, which are obtained by neutron transmutation, are doped in the first N-type semiconductor 110.
According to the isotope battery 1000 of the present invention, the isotope battery 1000 couples the first radiation source 111 and the transduction unit 100 together using neutron transmutation technology, i.e., elements in the first N-type semiconductor 110 are simultaneously transmuted to the first radiation source 111 and the first N-type impurity 112 by neutron transmutation technology, so that the first radiation source 111 and the transduction unit 100 are in an integrated structure, i.e., there is no physically separated boundary therebetween. Further, the first N-type semiconductor 110 can solve the problem of low energy conversion efficiency caused by the absorption effect of the radiation source of the isotope battery 1000, the problem of increased volume and weight of the isotope battery 1000 caused by a stacking mechanism formed between the radiation source and the transduction unit 100, and the problem of large local resistance variation caused by low power density and uneven doping. Specifically, the first radiation source 111 and the transducer element 100 are integrated into a single body, that is, the first radiation source 111 is uniformly distributed in the first N-type semiconductor 110, so that energy loss during energy conversion can be reduced, wherein the energy conversion efficiency of the integrated isotope battery 1000 is higher than that of a structure in which the radiation source and the transducer element are independent of each other. At the same time, the integrated isotope battery 1000 has a smaller volume and weight and is easier to integrate into various devices and systems. In addition, since the first N-type semiconductor 110 and the transducer 100 are tightly combined together, the risk of leakage of the radiation source can be effectively reduced, the safety problem caused by the failure or leakage of the radiation source can be further effectively avoided, and the safety in use is improved.
Some specific embodiments of the present invention are described below.
In the present invention, as shown in fig. 1 and 2, the isotope battery 1000 may be a radiovolt isotope battery, wherein the isotope battery 1000 includes a transduction unit 100 having a radioactive source, an electrode 200 for transmitting current, and the like. In addition, the P-type semiconductor in the transducer cell 100 may be replaced with the metal layer 300.
In some embodiments, as shown in fig. 1 and 2, the transduction unit 100 includes a first N-type semiconductor 110 and a P-type semiconductor 120, wherein the first N-type semiconductor 110 and the P-type semiconductor 120 generate power using a radiovolt principle. In the first N-type semiconductor 110 in the embodiment of the present invention, the first N-type semiconductor 110 is doped with a first radiation source 111 and a first N-type impurity 112 obtained by neutron transmutation. Specifically, the first N-type semiconductor 110 is irradiated with neutrons such that the first radiation source 111 and the first N-type impurity 112 are simultaneously generated in the first N-type semiconductor 110, wherein the first radiation source 111 and the first N-type impurity 112 are uniformly distributed in the first N-type semiconductor 110. That is, in the first N-type semiconductor 110, the first radiation source 111 and the first N-type impurity 112 can be simultaneously generated by neutron irradiation, not only making the first radiation source 111 and the first N-type impurity 112 uniformly distributed in the first N-type semiconductor 110, but also making the first radiation source 111 and the first N-type semiconductor 110 integrated.
In some embodiments, the substrate of the first N-type semiconductor 110 includes at least one of a silicon nitride substrate and a gallium nitride substrate.
Specifically, the substrate of the first N-type semiconductor may be GaN or SiN, or may be a mixture of GaN and SiN. Wherein 14Si can be transmuted to 15P element, 69Ga can be transmuted to 70Ge and 70Zn,75As can be transmuted to 76Se and 76Ge,70Ge can be transmuted to 71Ga,14N can be transmuted to 14C, and note that only GaN can be like SiN, and a radiation source can be generated by neutron irradiation, and doping elements can be generated.
For example, an integrated isotope battery 1000 based on SiN material and uniformly doped with 14C and P elements can be prepared by neutron transmutation technology, and the isotope battery 1000 not only has higher energy conversion efficiency and volumetric power density, i.e. can fully absorb and convert decay energy of a radioactive source into electric energy, thereby improving the energy conversion efficiency, but also reducing the volume of the isotope battery and improving the energy volumetric density and energy mass density. Meanwhile, the P element doped by neutron transmutation technology enables the N region in the semiconductor transduction unit to be doped more uniformly, so that the internal charge distribution in the transduction unit 100 is more uniform, the local resistance change is smaller, and the energy conversion efficiency is further improved.
In some embodiments, as shown in fig. 1, the transduction unit 100 further includes a second N-type semiconductor on the first N-type semiconductor 110, the second N-type semiconductor being doped with a second radiation source and a second N-type impurity obtained by neutron transmutation, wherein a concentration of the second N-type impurity is greater than or less than a concentration of the first N-type impurity. Specifically, in the second N-type semiconductor, the concentration of the second N-type impurity is greater than the concentration of the first N-type impurity, and in the case where the second N-type semiconductor and the first N-type semiconductor 110 are combined, the first N-type semiconductor 110 serves as an I-layer region in the case where the second N-type semiconductor serves as an N-layer region. If the concentration of the second N-type impurity is smaller than the concentration 112 of the first N-type impurity, the first N-type semiconductor is used as an N layer region, and the second N-type semiconductor is used as an I layer region.
In some embodiments, the substrate of the second N-type semiconductor comprises at least one of silicon nitride and gallium nitride. Specifically, the substrate of the second N-type semiconductor 130 is similar to the substrate of the first N-type semiconductor 130, and will not be described herein.
In some embodiments, the radioactive elements of the first radiation source 111 and the radioactive elements of the second radiation source may be the same or different.
The preparation method of the isotope battery comprises the following steps:
step S100: and irradiating the preset base material according to preset time by utilizing a neutron transmutation doping method, so as to generate the preset N-type semiconductor. Specifically, neutrons are utilized to radiate the preset base material, so that elements in the preset base material are simultaneously transmuted into radioactive elements and N-type impurity elements, and the preset N-type semiconductor is ensured to have the function of a radioactive source and the function of an N-layer structure.
Wherein the preset substrate comprises at least one of silicon nitride and gallium nitride.
For example, a SiN substrate is irradiated with a neutron flux of 10 21 n/m 2 S, the activity of the 14C can be more than 1Ci/g by irradiation of the neutron source for 1 month, and the N-type SiN substrate containing the 14C radioactive source is obtained, and the nuclear reaction process in the process is as follows:
the preset time may be understood as a time preset by a technician, where setting different preset times may cause the concentration of the radioactive element generated in the preset N-type semiconductor to be different, and at the same time, the concentration of the N-type impurity element may also be different.
For example, using a neutron flux of 10 21 n/m 2 S, wherein 1 month can be understood as the above-mentioned preset time.
In some embodiments, in step S100, the preset time includes a first preset time greater than or equal to a threshold time and a second preset time less than the threshold time.
Specifically, the preset N-type semiconductor is a first preset N-type semiconductor based on a first preset time, wherein the concentration of the radiation source and the concentration of the N-type impurity in the first preset N-type semiconductor reach a peak value. That is, under a specific neutron flux condition, when the irradiation time of neutrons exceeds a threshold time, the concentration of the radiation source and the concentration of the N-type impurity in the first preset N-type semiconductor are unchanged, that is, the concentration of the radiation source and the concentration of the N-type impurity in the first preset N-type semiconductor reach a peak value.
Specifically, the preset N-type semiconductor is a second preset N-type semiconductor based on a second preset time, wherein the concentration of the radiation source and the concentration of the N-type impurity in the second preset N-type semiconductor do not reach a peak value. That is, under the specific neutron flux premise, when the irradiation time of neutrons is less than the threshold time, the elements to be transmuted to the radioactive source and the elements to be transmuted to the N-type impurity in the first preset N-type semiconductor have not all been transmuted to the radioactive source and the N-type impurity, that is, the concentration of the radioactive source and the concentration of the N-type impurity in the first preset N-type semiconductor do not reach the peak.
In some embodiments, the value of neutron flux is controlled and the preset time is controlled so that the concentration of the radioactive element and the concentration of the N-type impurity element in the preset N-type semiconductor can be controlled.
In some embodiments, other semiconductor materials may be mixed in the preset substrate, so as to control the concentration of the element to be transmuted into the radioactive source and the element to be transmuted into the N-type impurity in the preset substrate, and further control the concentration of the radioactive element and the concentration of the N-type impurity element in the preset N-type semiconductor.
It should be noted that the threshold time may be understood as: when neutron irradiation reaches a certain time node, the concentration of the radioactive source and the concentration of the N-type impurity in the preset N-type semiconductor are not changed, that is, the element to be transmuted into the radioactive source and the element to be transmuted into the N-type impurity in the preset substrate cannot be transmuted, and the concentration of the radioactive source and the concentration of the N-type impurity in the preset N-type semiconductor reach peak values. Wherein the time node is a threshold time.
In some embodiments, the predetermined substrates include a first predetermined substrate and a second predetermined substrate, and step S100 includes: irradiating the first preset base material for a first preset time by utilizing a neutron transmutation doping method so as to generate a first preset N-type semiconductor; irradiating the second preset base material for a second preset time by using a neutron transmutation doping method so as to generate a second preset N-type semiconductor; the first preset N-type semiconductor and the second preset N-type semiconductor are combined into a whole, wherein in step S200, the P-type semiconductor is located on the second preset N-type semiconductor. Specifically, neutrons are utilized to radiate the first preset N-type semiconductor and the second preset N-type semiconductor, wherein the concentration of the N-type impurity in the first preset N-type semiconductor reaches a peak value, and the concentration of the N-type impurity in the second preset N-type semiconductor does not reach the peak value, i.e. the concentration of the N-type impurity in the first preset N-type semiconductor is larger than that of the N-type impurity in the second preset N-type semiconductor. The P-type semiconductor, the second preset N-type semiconductor and the first preset N-type semiconductor can sequentially form a PIN structure.
In some embodiments, the predetermined substrates include a first predetermined substrate and a second predetermined substrate, and step S100 includes: irradiating the first preset base material according to the second preset time by using a neutron transmutation doping method so as to generate a first preset N-type semiconductor; irradiating the second preset base material by using a neutron transmutation doping method according to the time shorter than the second preset time, so as to generate a second preset N-type semiconductor; the first preset N-type semiconductor and the second preset N-type semiconductor are combined into a whole, wherein in step S200, the P-type semiconductor is located on the second preset N-type semiconductor. Specifically, the concentration of the N-type impurity in the first preset N-type semiconductor does not reach a peak value, and at the same time, the concentration of the N-type impurity in the second preset N-type semiconductor does not reach a peak value, but the concentration of the N-type impurity in the first preset N-type semiconductor is greater than the concentration of the N-type impurity in the second preset N-type semiconductor. The P-type semiconductor, the second preset N-type semiconductor and the first preset N-type semiconductor can sequentially form a PIN structure.
In some embodiments, step S200: and preparing the P-type semiconductor doped with the P-type impurities on the preset N-type semiconductor.
Specifically, a preset N-type semiconductor is placed into an ion-enhanced chemical vapor deposition (PECVD) device, and a P-type SiN semiconductor containing B element is prepared on one side of the preset N-type semiconductor.
In some embodiments, after step S100, the preset N-type semiconductor is thinned to a first preset thickness. Specifically, since the range of radioactivity in the radioactive source is only a few micrometers, the thickness of the preset N-type semiconductor needs to be thinned to the first preset thickness, and the energy conversion efficiency and the power volume density can be effectively improved.
In some embodiments, after step S200, the P-type semiconductor is thinned to a second predetermined thickness. The principle of thinning the P-type semiconductor is the same as that of thinning the preset N-type semiconductor, and will not be repeated here.
In some embodiments, the thickness of the thinned semiconductor material (P-type semiconductor, preset N-type semiconductor) may be reduced by acid etching, or mechanical polishing, dry etching, optical delamination, mechanical polishing, and acid etching.
In some embodiments, in step S200, the P-type semiconductor of the P-type semiconductor doped with the P-type impurity prepared on the preset N-type semiconductor is replaced with a metal layer, so that a schottky junction structure semiconductor may be formed.
In some embodiments, the P-type semiconductor layer 120 or the metal layer 300 may be formed by magnetron sputtering, atomic layer deposition, molecular beam epitaxy, metal organic vapor phase epitaxy, liquid phase epitaxy, molecular flow epitaxy, or other techniques.
In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present invention.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the description of the present invention, the meaning of "plurality" means at least two, for example, two, three, etc., unless specifically defined otherwise.
In the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; may be mechanically connected, may be electrically connected or may be in communication with each other; either directly or indirectly, through intermediaries, or both, may be in communication with each other or in interaction with each other, unless expressly defined otherwise. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
In the present invention, unless expressly stated or limited otherwise, a first feature "up" or "down" a second feature may be the first and second features in direct contact, or the first and second features in indirect contact via an intervening medium. Moreover, a first feature being "above," "over" and "on" a second feature may be a first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is level higher than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is less level than the second feature.
For purposes of this disclosure, the terms "one embodiment," "some embodiments," "example," "a particular example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, the different embodiments or examples described in this specification and the features of the different embodiments or examples may be combined and combined by those skilled in the art without contradiction.
While the above embodiments have been shown and described, it should be understood that the above embodiments are illustrative and not to be construed as limiting the invention, and that variations, modifications, alternatives, and variations of the above embodiments may be made by those of ordinary skill in the art without departing from the scope of the invention.
Claims (10)
1. An isotope battery, comprising:
the energy conversion unit comprises a first N-type semiconductor, and a first radioactive source and a first N-type impurity obtained by neutron transmutation are doped in the first N-type semiconductor.
2. The isotope battery of claim 1 wherein,
the substrate of the first N-type semiconductor comprises at least one of a silicon nitride substrate and a gallium nitride substrate.
3. The isotope battery of claim 1, wherein the transduction unit further comprises a second N-type semiconductor located on the first N-type semiconductor, the second N-type semiconductor being doped with a second radiation source and a second N-type impurity resulting from neutron transmutation, wherein a concentration of the second N-type impurity is greater than or less than a concentration of the first N-type impurity.
4. The isotope battery of any of claims 3, wherein the substrate of the second N-type semiconductor comprises at least one of silicon nitride and gallium nitride.
5. A method of manufacturing an isotope battery, comprising:
step S100: irradiating a preset substrate for a preset time by using a neutron transmutation doping method so as to generate a preset N-type semiconductor;
wherein the preset substrate comprises at least one of silicon nitride and gallium nitride;
step S200: and preparing a P-type semiconductor doped with P-type impurities on the preset N-type semiconductor.
6. The method according to claim 5, wherein in step S100, the preset time includes a first preset time greater than or equal to a threshold time and a second preset time less than the threshold time;
based on the first preset time, the preset N-type semiconductor is a first preset N-type semiconductor, wherein the concentration of the radioactive source and the concentration of the N-type impurity in the first preset N-type semiconductor reach peak values;
based on the second preset time, the preset N-type semiconductor is a second preset N-type semiconductor, wherein the concentration of the radioactive source and the concentration of the N-type impurity in the second preset N-type semiconductor do not reach the peak value.
7. The method of claim 6, wherein the predetermined base material includes a first predetermined base material and a second predetermined base material, and the step S100 includes:
irradiating the first preset base material for the first preset time by utilizing a neutron transmutation doping method so as to generate the first preset N-type semiconductor;
irradiating the second preset base material for the second preset time by using a neutron transmutation doping method so as to generate a second preset N-type semiconductor;
and synthesizing the first preset N-type semiconductor and the second preset N-type semiconductor into a whole, wherein in step S200, the P-type semiconductor is positioned on the second preset N-type semiconductor.
8. The method of claim 6, wherein the predetermined base material includes a first predetermined base material and a second predetermined base material, and the step S100 includes:
irradiating the first preset base material for the second preset time by using a neutron transmutation doping method so as to generate the first preset N-type semiconductor;
irradiating the second preset base material by using a neutron transmutation doping method according to the time shorter than the second preset time, so as to generate a second preset N-type semiconductor;
and synthesizing the first preset N-type semiconductor and the second preset N-type semiconductor into a whole, wherein in step S200, the P-type semiconductor is positioned on the second preset N-type semiconductor.
9. The method for producing an isotope battery as claimed in any one of claims 5 to 8,
after step S100, thinning the preset N-type semiconductor to a first preset thickness; and/or
After step S200, the P-type semiconductor is thinned to a second predetermined thickness.
10. The method according to any one of claims 5 to 8, wherein in step S200, the P-type semiconductor of the P-type semiconductor doped with P-type impurities prepared on the preset N-type semiconductor is replaced with a metal layer.
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