CN117572720A

CN117572720A - Apparatus and method for removing film and polishing substrate, and method for manufacturing photomask substrate

Info

Publication number: CN117572720A
Application number: CN202311610016.XA
Authority: CN
Inventors: 季明华; 黄早红
Original assignee: Shanghai Chuanxin Semiconductor Co ltd
Current assignee: Shanghai Chuanxin Semiconductor Co ltd
Priority date: 2023-11-28
Filing date: 2023-11-28
Publication date: 2024-02-20

Abstract

The invention provides a device and a method for removing and polishing a substrate, a photomask base plate and a manufacturing method of the photomask, wherein the device for removing and polishing the substrate comprises the following steps: a reaction chamber in which a first substrate or a photomask is placed, the photomask comprising a second substrate and a mask structure on the second substrate; a remote ionizer and/or bottom electrode, top electrode, and power supply, the remote ionizer emitting inert gas ions into the reaction chamber; a power supply is connected to the top electrode and the bottom electrode to generate a bias voltage between the top electrode and the bottom electrode such that the top electrode generates an electric field; the inert gas ion discharge bombardment removes the mask structure and the raised defects on the surfaces of the first substrate and the second substrate, and the electric field accelerates the inert gas ions and removes the raised defects. According to the technical scheme, the surface roughness of the polished first substrate or the recovered second substrate reaches the surface flatness of an atomic level, and the cost for recovering the second substrate can be reduced.

Description

Apparatus and method for removing film and polishing substrate, and method for manufacturing photomask substrate

Technical Field

The present invention relates to the field of integrated circuit manufacturing technology, and in particular, to a device and a method for removing and polishing a substrate, a photomask substrate, and a method for manufacturing a photomask.

Background

Because of the high cost of the substrate (typically high purity synthetic quartz) in photomasks, recycling of the discarded photomask substrate is often performed to reduce costs. Currently, the substrate recycling method includes: first, pattern materials (typically metals and metal oxides) on a substrate are removed by wet etching, laser ablation, or plasma etching; then, removing the damaged surface layer of the substrate by adopting a chemical mechanical polishing process; then, the surface of the substrate is polished (optical grade) by a super polishing process so that the substrate has a smooth surface; then, the surface of the substrate is wet cleaned again.

The wet etching has high selectivity to pattern materials on the substrate, and the etched substrate has good surface uniformity and low induced diffusion with the substrate and low cost, but a workbench for wet etching needs to be provided and a large amount of acid solution is consumed; the laser ablation adopts point-by-point ablation, which leads to rough and uneven surface of the ablated substrate and high induction diffusion with the substrate; the plasma etching has high selectivity to the substrate, the uniformity of the etched substrate surface is good, the etching rate is high due to the existence of direct current bias voltage, but the surface of the substrate is damaged due to the plasma bombardment, the high induced diffusion with the substrate is caused due to the existence of plasma and the high energy of ions during etching, and the cost of a plasma etching system is high; the chemical mechanical polishing ensures that the uniformity of the surface of the substrate is good, but the selectivity to the substrate is poor, the loss of the substrate material is large, the cost is high, and the grinding liquid is needed as consumable materials; the super polishing adopts small pore size, mainly removes point by point, leads to slow removal speed and has high cost of the super polishing system. Therefore, the steps of recycling the substrate of the discarded photomask are complicated, and a plurality of different kinds of processes are required, resulting in high cost and large damage to the surface of the recycled substrate.

Also, for polishing of individual substrates, the polished substrate surface by the existing polishing methods (e.g., magnetorheological polishing, ion beam polishing, or atmospheric pressure plasma chemical processing, etc.) still cannot completely eliminate convex defects and concave defects of scratches/grooves formed by atomic stacking, resulting in very limited improvement of the substrate surface roughness.

Accordingly, improvements in the polishing scheme of the substrate or the substrate recycling scheme of the discarded photomask are required to solve the above-described problems.

Disclosure of Invention

The invention aims to provide a device and a method for removing and polishing a substrate, a photomask base plate and a method for manufacturing the photomask, which can enable the surface roughness of a polished first substrate or a recovered second substrate to reach the surface flatness of an atomic level and can reduce the cost of recovering the second substrate.

In order to achieve the above object, the present invention provides a stripping and polishing apparatus for a substrate, comprising:

a reaction chamber in which a first substrate or a photomask is placed, the photomask including a second substrate and a mask structure formed on the second substrate;

a remote ionizer, and/or a bottom electrode, a top electrode, and a power source, the remote ionizer being connected to the reaction chamber to emit inert gas ions into the reaction chamber; the top electrode and the bottom electrode are arranged in the reaction chamber, the power supply is arranged outside the reaction chamber, and the power supply is respectively connected with the top electrode and the bottom electrode so as to generate bias voltage between the top electrode and the bottom electrode, so that the top electrode generates an electric field;

The inert gas ions are used for selectively discharging and bombarding to remove the mask structure and the protruding defects of the surfaces of the first substrate and the second substrate, the electric field is used for enabling the inert gas ions to accelerate and removing the protruding defects of the surfaces of the first substrate and the second substrate, and then the surfaces of the first substrate and the second substrate have atomic roughness.

Optionally, the reaction chamber contains an inert gas, and the electric field is further used for ionizing the inert gas into inert gas ions.

Optionally, the top electrode comprises an integral electrode for generating an electric field perpendicular to the first substrate or the reticle surface and/or a segmented electrode for generating an electric field at an oblique angle or a rotating electric field to the first substrate or the reticle surface.

Optionally, the segmented electrode comprises a plurality of electrode segments, wherein a power source is separately connected between each electrode segment and the bottom electrode, so that each electrode segment can separately or sequentially generate the electric field.

Optionally, when the top electrode includes the segmented electrode, the stripping and polishing device of the substrate further includes a charge control capacitor, each electrode segment is separately connected with the bottom electrode, and the charge control capacitor is respectively connected with the power supply and the electrode segment in a switching manner, so that the power supply charges the charge control capacitor, and the charge control capacitor generates the electric field after discharging the electrode segment.

Optionally, the power supply is a direct current power supply, and the film removing and polishing device for the substrate further comprises:

an alternating current signal generator or a pulse signal generator is connected in series with the power supply.

Alternatively, the frequency component of the alternating current signal generated by the alternating current signal generator or the pulse signal generated by the pulse signal generator is equal to the mechanical resonance frequency of atoms in the mask structure and stacked atoms in the raised defect.

Optionally, the top electrode is disposed on both sides of the first substrate or the photomask.

Optionally, the stripping and polishing device for a substrate further includes:

an electron generator in communication with the reaction chamber for emitting electrons to the first substrate or the photomask surface prior to emitting inert gas ions into the reaction chamber and/or causing the top electrode to generate an electric field.

and the temperature controller is used for controlling the temperature range of the first substrate or the photomask to be 25-500 ℃.

and the vacuumizing unit is communicated with the reaction chamber and is used for vacuumizing the reaction chamber and vacuumizing the atoms of the removed mask structure and the atoms of the bump defects.

The invention also provides a film removing and polishing method of the substrate, which comprises the following steps:

providing a first substrate or a scrapped photomask, wherein the photomask comprises a second substrate and a mask structure formed on the second substrate;

and polishing the surface of the first substrate by adopting the film removing and polishing device of the substrate or recycling the second substrate of the photomask to obtain a regenerated second substrate.

The invention also provides a manufacturing method of the photomask substrate, which comprises the following steps:

providing a first substrate or a scrapped photomask, polishing the surface of the first substrate by adopting a film removing and polishing method of the substrate or recycling a second substrate of the photomask to obtain a regenerated second substrate;

Forming a light shielding layer on the polished first substrate or the regenerated second substrate;

forming a photoresist layer on the shading layer.

Optionally, before forming the light shielding layer on the polished first substrate or the regenerated second substrate, the method for manufacturing a photomask blank further includes:

and forming a phase shift layer on the polished first substrate or the regenerated second substrate, wherein the light shielding layer is positioned on the phase shift layer.

Optionally, before forming the phase shift layer on the polished first substrate or the regenerated second substrate, the method for manufacturing a photomask blank further includes:

a spin-on carbon layer is formed on the front and/or back of the polished first substrate or the regenerated second substrate.

The invention also provides a manufacturing method of the photomask, which comprises the following steps:

forming a photomask substrate by adopting the manufacturing method of the photomask substrate;

patterning the photoresist layer to form the photoresist layer into a patterned photoresist layer;

etching the shading layer by taking the patterned photoresist layer as a mask so as to form a patterned shading layer on the polished first substrate or the regenerated second substrate;

And removing the patterned photoresist layer.

Optionally, a phase shift layer is further formed between the polished first substrate or the regenerated second substrate and the light shielding layer, and after the patterned photoresist layer is used as a mask to etch the light shielding layer, the phase shift layer is also etched.

Compared with the prior art, the technical scheme of the invention has the following beneficial effects:

1. the stripping and polishing device of the substrate of the present invention comprises: a reaction chamber in which a first substrate or a photomask is placed, the photomask including a second substrate and a mask structure formed on the second substrate; a remote ionizer, and/or a bottom electrode, a top electrode, and a power source, the remote ionizer being connected to the reaction chamber to emit inert gas ions into the reaction chamber; the top electrode and the bottom electrode are arranged in the reaction chamber, the power supply is arranged outside the reaction chamber, and the power supply is respectively connected with the top electrode and the bottom electrode so as to generate bias voltage between the top electrode and the bottom electrode, so that the top electrode generates an electric field; the inert gas ions are used for selectively discharging and bombarding to remove the mask structure and the protruding defects on the surfaces of the first substrate and the second substrate, the electric field is used for enabling the inert gas ions to accelerate to move and removing the protruding defects on the surfaces of the first substrate and the second substrate, and further the surface roughness of the polished first substrate or the recovered second substrate reaches the surface flatness of an atomic level, and the cost for recovering the second substrate can be reduced.

2. According to the film removing and polishing method for the substrate, the film removing and polishing device for the substrate is adopted to polish the surface of the first substrate or recycle the second substrate of the photomask to obtain the regenerated second substrate, so that the surface roughness of the polished first substrate or the recycled second substrate reaches the surface flatness of an atomic level, and the cost for recycling the second substrate can be reduced.

3. According to the manufacturing method of the photomask substrate, the surface of the first substrate is polished by adopting the film removing and polishing method of the substrate or the second substrate of the photomask is recovered to obtain a regenerated second substrate; forming a light shielding layer on the polished first substrate or the regenerated second substrate; and forming a photoresist layer on the shading layer, so that the cost for manufacturing the non-pattern photomask substrate is reduced, the quality of the photomask substrate is improved, and the non-pattern photomask substrate can be recycled for multiple times.

4. According to the manufacturing method of the photomask, the photomask is formed by adopting the manufacturing method of the photomask; patterning the photoresist layer to form the photoresist layer into a patterned photoresist layer; etching the shading layer by taking the patterned photoresist layer as a mask so as to form a patterned shading layer on the polished first substrate or the regenerated second substrate; and removing the patterned photoresist layer, so that the cost for manufacturing the photomask is reduced, the quality of the photomask is improved, and the photomask with patterns can be recycled for multiple times.

Drawings

FIG. 1 is a schematic view showing a structure of a stripping and polishing apparatus for a substrate according to an embodiment of the present invention;

FIG. 2 is a schematic view showing a structure of a stripping and polishing apparatus for a substrate according to another embodiment of the present invention;

FIG. 3 is a schematic diagram of a top electrode structure according to an embodiment of the present invention;

FIG. 4 is a schematic diagram of the structure of a top electrode and charge control capacitor according to an embodiment of the present invention;

FIG. 5 is a schematic view of a first substrate prior to polishing according to an embodiment of the present invention;

FIG. 6 is a schematic view of a polished first substrate according to an embodiment of the invention;

FIG. 7 is a schematic illustration of a rejected photomask according to an embodiment of the invention;

FIG. 8 is a schematic view of a regenerated second substrate according to an embodiment of the invention;

fig. 9 is a flow chart of a method of stripping and polishing a substrate in accordance with an embodiment of the present invention.

Wherein, the reference numerals of fig. 1 to 9 are as follows:

11-a first substrate; 111-first atom; 20-a photomask; 21-a second substrate; 211-a second atom; a 22-mask structure; 221-a third atom; 31-a reaction chamber; 311-inlet; 312-outlet; 32-top electrode; 321-an integral electrode; 322-segmented electrode; 33-power supply; 34-a remote ionizer; 35-a charge control capacitor; 36-electron generator.

Detailed Description

In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the invention may be practiced without one or more of these details. In other instances, well-known features have not been described in detail in order to avoid obscuring the invention. It should be understood that the present invention may be embodied in various forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the dimensions and relative dimensions of layers and regions may be exaggerated for the same elements throughout for clarity.

It will be understood that when an element or layer is referred to as being "on" …, it can be directly on, adjacent, connected or coupled to the other element or layer, or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on" another element or layer, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers, sections and/or processes, these elements, components, regions, layers, sections and/or processes should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, section, and/or process from another element, component, region, layer, section, and/or process. Thus, a first element, component, region, layer, section and/or process discussed below could be termed a second element, component, region, layer, section and/or process without departing from the teachings of the present invention.

Spatially relative terms, such as "under …," "under …," "below," "under …," "above …," "above," "on top of," "on bottom of," "front of," "back of," and the like, may be used herein for convenience of description to describe one element or feature as illustrated in the figures relative to another element or feature. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use and operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, then elements or features described as "under" or "beneath" or "on the bottom" or "on the back" would then be oriented "on" or "top" or "forward" other elements or features. Thus, the exemplary terms "under …", "under …" and "on the back of …" may include both an upper and lower orientation. The device may be otherwise oriented (rotated 90 degrees or other orientations) and the spatially relative descriptors used herein interpreted accordingly.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.

An embodiment of the present invention provides a stripping and polishing apparatus for a substrate, including: a reaction chamber in which a first substrate or a photomask is placed, the photomask including a second substrate and a mask structure formed on the second substrate; a remote ionizer, and/or a bottom electrode, a top electrode, and a power source, the remote ionizer being connected to the reaction chamber to emit inert gas ions into the reaction chamber; the top electrode and the bottom electrode are arranged in the reaction chamber, the power supply is arranged outside the reaction chamber, and the power supply is respectively connected with the top electrode and the bottom electrode so as to generate bias voltage between the top electrode and the bottom electrode, so that the top electrode generates an electric field; the inert gas ions are used for selectively discharging and bombarding to remove the mask structure and the protruding defects of the surfaces of the first substrate and the second substrate, the electric field is used for enabling the inert gas ions to accelerate and removing the protruding defects of the surfaces of the first substrate and the second substrate, and then the surfaces of the first substrate and the second substrate have atomic roughness.

The substrate recovery apparatus according to the present embodiment will be described in detail with reference to fig. 1 to 8.

The reaction chamber 31 has a first substrate 11 or a photomask 20 placed therein, and the photomask 20 includes a second substrate 21 and a mask structure 22 formed on the second substrate 21.

Wherein the first substrate 11 or the photomask 20 may be horizontally disposed or vertically disposed in the reaction chamber 31. In the embodiment shown in fig. 1 and 2, the photomask 20 is horizontally disposed in the reaction chamber 31.

Wherein the mask structure 22 may be an unpatterned structure, and the mask structure 22 covers the entire surface of the second substrate 21; alternatively, as shown in fig. 7, the mask structure 22 is a patterned structure, where the mask structure 22 covers a portion of the surface of the second substrate 21 and exposes another portion of the surface of the second substrate 21.

The mask structure 22 may include only a light shielding layer (not shown), or the mask structure 22 may include a phase shift layer (not shown) and a light shielding layer formed on the phase shift layer; alternatively, the mask structure 22 may include a phase shift layer, a light shielding layer, and a photoresist layer from bottom to top.

Also, the first substrate 11 and the second substrate 21 have uneven surfaces, i.e., the first substrate 11 and the second substrate 21 have surface defects including convex defects and concave defects.

Wherein the first atoms 111 of the surface of the first substrate 11 are illustrated in fig. 5 to 6 for explaining the roughness of the surface of the first substrate 11, wherein in fig. 5, the position A1 of the surface of the first substrate 11 has more first atoms 111 relative to the flat position, i.e. the position A1 of the surface of the first substrate 11 has protrusions (i.e. protrusion defects) stacked by the first atoms 111 relative to the flat position, and the position B1 of the surface of the first substrate 11 has fewer first atoms 111 relative to the flat position, i.e. the position B1 of the surface of the first substrate 11 has scratches or grooves (i.e. concave defects) of nanometer scale relative to the flat position.

The second atoms 211 of the surface of the second substrate 21 are illustrated in fig. 7-8 for illustrating the roughness of the surface of the second substrate 21, and the third atoms 221 in the mask structure 22 are illustrated. Wherein in fig. 7, the position A2 of the surface of the second substrate 21 has more second atoms 211 relative to the flat position, i.e., the position A2 of the surface of the second substrate 21 has protrusions (i.e., protrusion defects) in which the second atoms 211 are stacked relative to the flat position, and the position B2 of the surface of the second substrate 21 has fewer second atoms 211 relative to the flat position, i.e., the position B2 of the surface of the second substrate 21 has scratches or grooves (i.e., concave defects) of nanometer scale relative to the flat position; the third atoms 221 in the mask structure 22 are stacked to cover the second atoms 211 of a part of the surface of the second substrate 21, and the third atoms 221 in the mask structure 22 are raised at a flat position relative to the surface of the second substrate 21.

The first substrate 11 and the second substrate 21 may be made of at least one material selected from quartz, borosilicate, aluminum silicate, silicon carbide, etc., and the light shielding layer may be made of Cr, cr oxide (e.g., crO ₂ ) At least one of CrON, etc., the phase shift layer may be made of MoSi _x 、MoSi _x O _y 、MoSi _x O _y N _z 、MoSi _x O _y C _v N _z At least one of the following.

The first atoms 111 on the surface of the first substrate 11 refer to atoms in the material of the first substrate 11, the second atoms 211 on the surface of the second substrate 21 refer to atoms in the material of the second substrate 21, and for example, when the materials of the first substrate 11 and the second substrate 21 are quartz, the first atoms 111 and the second atoms 211 are amorphous clusters of silicon dioxide; the third atoms 221 in the mask structure 22 refer to atoms in the material of the mask structure 22, for example, when the mask structure 22 includes only a light shielding layer, and the material of the light shielding layer is Cr or an oxide of Cr, the third atoms 221 are clusters of Cr or an oxide of Cr.

The remote ion generator 34 is disposed outside the reaction chamber 31 and connected to the reaction chamber 31 to emit inert gas ions into the reaction chamber 31.

Inert gas ions emitted by the remote ionizer 34 can be remotely transported through a conduit into the reaction chamber 31 and thereby emitted to the surface of the first substrate 11 or the photomask 20.

The remote ionizer 34 may employ an existing remote ionizer, and in one embodiment, the remote ionizer 34 may include a radio frequency power source, an anode, a cathode, and the like to generate inert gas ions inside the remote ionizer 34 by ionizing the inert gas.

The top electrode 32 and the bottom electrode (not shown) are disposed in the reaction chamber 31, the power supply 33 is disposed outside the reaction chamber 31, and the power supply 33 is respectively connected to the top electrode 32 and the bottom electrode to generate a bias voltage between the top electrode 32 and the bottom electrode, so that the top electrode 32 generates an electric field.

Wherein the top electrode 32 is disposed opposite to the first substrate 11 or the photomask 20, such that the top electrode 32 generates the electric field to the surface of the first substrate 11 or the photomask 20; the bottom electrode is capable of supporting and holding the first substrate 11 or the reticle 20.

The inert gas ions are used for selectively discharging and bombarding to remove the raised defects of the mask structure 22 and the surfaces of the first substrate 11 and the second substrate 21, and the electric field is used for enabling the inert gas ions to accelerate and removing the raised defects of the surfaces of the first substrate 11 and the second substrate 21, so that the surfaces of the first substrate 11 and the second substrate 22 have atomic roughness. For example, roughness can reach less than 0.3nm.

And, when the inert gas is contained in the reaction chamber 31, the electric field generated by the top electrode 32 also serves to ionize the inert gas into inert gas ions.

When the photomask 20 is placed in the reaction chamber 31, the substrate stripping and polishing apparatus may include only the remote ionizer 34 to selectively discharge bombard with inert gas ions emitted by the remote ionizer 34 to remove the raised defects on the mask structure 22 and the surface of the second substrate 21, i.e., to effect stripping and polishing of the second substrate 21. Alternatively, the film removing and polishing apparatus for a substrate includes only the top electrode 32, the bottom electrode and the power supply 33, and at this time, the reaction chamber 31 contains an inert gas, and the electric field generated by the top electrode 32 ionizes the inert gas into inert gas ions and accelerates the inert gas ions, so that the inert gas ions generated by ionizing the inert gas with the electric field selectively discharge bombard to remove the protruding defects on the mask structure 22 and the surface of the second substrate 21, and may also remove the protruding defects on the surface of the second substrate 21 with the electric field. Alternatively, the substrate stripping and polishing apparatus may include the remote ionizer 34, the top electrode 32, the bottom electrode, and the power supply 33 at the same time; at this time, if the reaction chamber 31 does not contain inert gas, the inert gas ions emitted by the remote ion generator 34 are selectively discharged to bombard and remove the protruding defects on the surfaces of the mask structure 22 and the second substrate 21, the electric field generated by the top electrode 32 accelerates the inert gas ions emitted by the remote ion generator 34 and the electric field can also remove the protruding defects on the surface of the second substrate 21, that is, the inert gas ions emitted by the remote ion generator 34 perform film removal and polishing on the second substrate 21, and the electric field can also perform polishing on the second substrate 21; if the reaction chamber 31 contains inert gas, the electric field generated by the top electrode 32 ionizes the inert gas into inert gas ions, so that the inert gas ions accelerate and remove the protruding defects on the surface of the second substrate 21, and further the inert gas ions generated by the electric field ionization and the inert gas ions emitted by the remote ion generator 34 can jointly perform film removal and polishing on the second substrate 21, and the electric field can also perform polishing on the second substrate 21. Wherein the inert gas ions accelerate toward the reticle 20, so that the stripping and polishing of the second substrate 21 can be more rapidly achieved.

When the first substrate 11 is placed in the reaction chamber 31, the film removing and polishing apparatus for the substrate may include only the remote ion generator 34, so as to remove the convex defect (the electric field force generated by the strong near-field electric field at the convex defect) on the surface of the first substrate 11 by using the inert gas ion emitted by the remote ion generator 34 to perform the selective discharge bombardment, that is, to polish the first substrate 11. Alternatively, the film removing and polishing apparatus for the substrate only includes the top electrode 32, the bottom electrode and the power supply 33, and in this case, if the reaction chamber 31 does not contain inert gas, the electric field generated by the top electrode 32 may also remove the protruding defect (there is a strong electric field force generated by the near field electric field at the protruding defect) on the surface of the first substrate 11; if the reaction chamber 31 contains an inert gas, the electric field generated by the top electrode 32 (if large enough) can ionize the inert gas into inert gas ions and accelerate the inert gas ions, so that the inert gas ions and the electric field act together to remove the protruding defects on the surface of the first substrate 11. Alternatively, the film removing and polishing apparatus for a substrate may include the remote ion generator 34, the top electrode 32, the bottom electrode and the power supply 33, where if the reaction chamber 31 does not contain inert gas, the electric field generated by the top electrode 32 accelerates inert gas ions emitted from the remote ion generator 34, and the inert gas ions emitted from the remote ion generator 34 and the electric field generated by the top electrode 32 cooperate to remove protruding defects (there is a strong electric field force generated by a near field electric field at the protruding defects) on the surface of the first substrate 11; if the reaction chamber 31 contains inert gas, the electric field generated by the top electrode 32 ionizes the inert gas into inert gas ions and accelerates the inert gas ions, so that the inert gas ions emitted by the remote ionizer 34, the inert gas ions generated by the electric field ionization generated by the top electrode 32, and the electric field generated by the top electrode 32 can act together to remove the protruding defects on the surface of the first substrate 11. Wherein the inert gas ions are accelerated toward the first substrate 11 so that polishing of the first substrate 11 can be achieved more rapidly.

Wherein the inert gas may include at least one of helium, argon, krypton, nitrogen, and the like. As shown in fig. 7, the removal of the third atoms 221 in the mask structure 22 and the second atoms 211 at the raised defects of the surface of the second substrate 21 by electrostatic discharge bombardment of argon ions (ar+) is illustrated.

Referring to fig. 5 and 6, taking polishing of the first substrate 11 by the electric field as an example, the principle includes: the electric field induces opposite charges on the surface of the first substrate 11 (negative charges are induced on the surface of the first substrate 11 when the electric field is positive, positive charges are induced on the surface of the first substrate 11 when the electric field is negative), so that the electric field is attractive to the induced charges, and the attractive force is the electric field force; due to the existence of the tip discharge effect, the electric field near the surface of the first substrate 11 is enhanced at the convex defect, the near-field electric field at the convex defect is stronger, and the quantity of charges induced at the convex defect is more than that of the flat part of the surface of the first substrate 11, so that the electric field force applied to the convex defect is larger than that applied to the flat part of the surface of the first substrate 11, and atoms at the convex defect on the surface of the first substrate 11 are more easily absorbed or destroyed along with the induced charges, so that the convex defect is polished and removed under the action force of the electric field; and the atoms on the flat surface of the first substrate 11 are stressed little, so that the atoms on the flat surface of the first substrate 11 are not easy to be polished and removed, i.e. the atoms of the convex defects are selectively and effectively removed. For example, atoms of the bump defect at the position A1 in fig. 5 are removed, and the first atoms 111 at the flat surface of the first substrate 11 are not polished.

In addition, as the electric charge at the concave defect is less, the electric field of the concave defect area is weaker, so that atoms (charged or uncharged atoms) removed at the defect position of the edge bulge of the concave defect are more easily captured into the concave defect adjacent to the bulge defect, and the concave defect is filled with atoms, so that the concave defect position is flattened; for example, atoms C2 and C3 of the convex defect at position A1 in FIG. 5 are trapped into the concave defect at position B1. Wherein the atoms removed at the raised defect may be charged (e.g., negatively charged atoms C2 in fig. 5), the atoms removed at the raised defect are trapped in the recessed defect adjacent to the raised defect due to the small electric field at the top of the recessed defect; alternatively, the atoms removed at the raised defects may also be neutral (e.g., uncharged atoms C1 in fig. 5) or positively charged (e.g., positively charged atoms C3 in fig. 5), both of which are more easily trapped in the recessed defects adjacent to the raised defects, or redeposit on atoms elsewhere on the surface of the first substrate 11 to form new raised defects, but are subsequently polished off under the force of an electric field.

Therefore, the polishing of the first substrate 11 using the electric field is a completely "non-contact" method, and by using the electric field to "suck out" or destroy the convex defects on the surface of the first substrate 11 and fill the concave defects on the surface of the first substrate 11, the roughness of the surface of the first substrate 11 is continuously similar to that on the "atomic scale", the surface of the first substrate 11 is smooth, and further, the surface of the first substrate 11 has the atomic scale roughness as shown in fig. 6, and the roughness of the surface of the first substrate 11 is significantly improved.

The principle of polishing the second substrate 21 by the electric field is the same as that of polishing the first substrate 11 by the electric field.

Referring to fig. 7 and 8, taking as an example the removal and polishing of the photomask 20 using the inert gas ions, the principles include: due to the existence of the tip discharge effect, the inert gas ions can generate an enhanced electric field at the raised mask structure 22 and the raised defect on the surface of the second substrate 21, so that the inert gas ions are more easily attracted to the mask structure 22 and the raised defect under the action of the enhanced electric field, and the electrostatic discharge of the inert gas ions bombards, sputters or ablates the mask structure 22 and the raised defect with higher probability than the flat position of the surface of the second substrate 21, namely, the raised defect on the surfaces of the mask structure 22 and the second substrate 21 is more easily knocked out or destroyed; and the inert gas ions are not easily attracted to the flat surface of the second substrate 21, so that the atoms on the flat surface of the second substrate 21 are less likely to be "knocked out" or damaged, i.e., the atoms of the mask structure 22 and the protruding defects are selectively and effectively removed. For example, in fig. 7, both the third atoms 221 of the mask structure 22 and the second atoms 211 of the raised defects at the position A2 are removed, while the second atoms 211 at the flat surface of the second substrate 21 are not polished.

In addition, the convex defects on the surfaces of the mask structure 22 and the second substrate 21 can be removed, the edges of the concave defects (such as scratches) are generally convex or sharp, the tip discharge effect causes an enhanced electric field to be generated at the edges of the concave defects, and then the inert gas ions are easily attracted to the edges of the concave defects under the action of the enhanced electric field, so that the static discharge of the inert gas ions can bombard, sputter or ablate atoms at the edges of the concave defects, i.e. the atoms at the edges of the concave defects are also easily knocked out or destroyed.

And, although the electric field intensity in the concave defect region is weak, atoms (charged or uncharged atoms) removed at the convex defect and at the edge of the concave defect are easily trapped in the concave defect, and thus the concave defect is filled with atoms, so that the concave defect becomes flat. For example, the second atom 211 of the convex defect at the position A2 in fig. 7 is trapped in the concave defect at the position B2 adjacent to the convex defect.

Thus, performing the stripping and polishing of the photomask 20 with the inert gas ions is also a "non-contact" method, and the removal of the mask structure 22 and the raised defects and filling the recessed defects on the surface of the second substrate 21 are performed by selectively bombarding, sputtering or ablating the mask structure 22 and the raised defects using the electrostatic discharge of the inert gas ions, and the entire process is performed mainly by "mechanical" and "thermal" to break the chemical bonds of the mask structure 22 and the raised defects without melting or chemical reaction, so that the removal of the mask structure 22 and the atomic polishing of the surface of the second substrate 21 can be simultaneously provided without damaging the smooth surface of the second substrate 21 in atomic scale, so that the roughness of the surface of the second substrate 21 is continuously increased in atomic scale, and the surface of the second substrate 21 has the atomic scale roughness as shown in fig. 8.

The principle of polishing the first substrate 11 with the inert gas ions is the same as that of polishing the second substrate 21 with the inert gas ions.

The top electrode 32 may be connected to the positive or negative pole of the power supply 33, and the bottom electrode is grounded. The power supply 33 is a dc power supply.

The magnitude of the bias voltage generated between the top electrode 32 and the bottom electrode determines the strength of the electric field generated by the top electrode 32 towards the surface of the first substrate 11 or the reticle 20. By adjusting the magnitude of the electric field strength, damage to the surfaces of the second substrate 21 and the first substrate 11 is avoided when polishing the second substrate 21 and the first substrate 11 with the electric field.

And, when the electric field is used to ionize the inert gas into inert gas ions, the required electric field strength is strong; when the electric field is not required for ionizing the inert gas into inert gas ions, the required electric field strength is weak. Wherein, the concentration of the inert gas ions generated by ionization can be adjusted by adjusting the intensity of the electric field; by adjusting parameters (e.g., voltage, etc.) of the remote ionizer 34, the concentration level of the emitted inert gas ions is enabled. Thereby avoiding damage to the surfaces of the second substrate 21 and the first substrate 11 when performing film removal and polishing on the second substrate 21 or performing polishing on the first substrate 11 using the inert gas ions.

The shape and area size of the top electrode 32 are not limited. Preferably, the area of the top electrode 32 may be large, so that the electric field generated by the top electrode 32 may cover the entire surface of the first substrate 11 or the photomask 20, so that the raised defects on the entire surface of the first substrate 11 or the raised defects on the entire surface of the photomask 20 and the raised defects on the surface of the second substrate 21 may be removed at the same time, and further, the removed surface of the first substrate 11 or the second substrate 21 may have better flatness.

As shown in fig. 3, the top electrode 32 includes a unitary electrode 321 and/or a segmented electrode 322, wherein the unitary electrode 321 is configured to generate an electric field perpendicular to the surface of the first substrate 11 or the photomask 20, and the segmented electrode 322 is configured to generate an electric field inclined at an angle to the surface of the first substrate 11 or the photomask 20 or a rotating electric field. When the top electrode 32 includes both the integrated electrode 321 and the segmented electrode 322, the first substrate 11 or the second substrate 21 can be polished from various angles, so that the uniformity of the surface of the polished first substrate 11 or second substrate 21 is better.

The integrated electrode 321 is a monolithic electrode.

When the top electrode 32 includes the segmented electrode 322, the segmented electrode 322 includes a plurality of electrode segments disposed at intervals, and each of the electrode segments and the bottom electrode is individually connected to the power supply 33, so that each of the electrode segments can individually, sequentially or simultaneously generate the electric field in total, and further process a certain area or all areas of the surface of the first substrate 11 or the photomask 20; wherein, the interval between the adjacent electrode segments can be 1 cm-10 cm.

Also, when the top electrode 32 includes the segmented electrode 322, preferably, as shown in fig. 4, the stripping and polishing apparatus for a substrate further includes a charge control capacitor 35, wherein each of the electrode segments and the bottom electrode is separately connected with one of the charge control capacitors 35, and the charge control capacitor 35 is respectively connected with the power supply 33 and the electrode segments in a switching manner, so that the power supply 33 charges the charge control capacitor 35 when the charge control capacitor 35 is connected with the power supply 33, and the charge control capacitor 35 discharges the electrode segments to generate the electric field when the charge control capacitor 35 is connected with the electrode segments, so that the energy stored by the charge control capacitor 35 controls the maximum charge amount and energy that can be discharged by the circuit in which each of the electrode segments is located, and further controls the intensity of the electric field that can be generated by each of the electrode segments, thereby avoiding that the electric field is too strong to damage the surface of the first substrate 11 or the second substrate 21, and further avoiding that the surface of the first substrate 11 or the second substrate 21 is damaged.

Wherein one end of each of the charge control capacitors 35 is connected to the bottom electrode (i.e., grounded), and the other end of each of the charge control capacitors 35 is switchably connected to the power supply 33 and the electrode segments. And, each of the charge control capacitors 35 may be sequentially switched or simultaneously switched to connect the power supply 33 and the electrode segments, with a switching frequency up to 1GHz.

The capacitance of the charge control capacitor 35 may be 100fF to 1. Mu.F.

Further, switches (not shown) may be provided on the circuit between the integrated electrode 321 and the bottom electrode, on the circuit between each of the charge control capacitors 35 and the power supply 33 and the electrode segments, and on the circuit between each of the electrode segments and the bottom electrode, respectively, to control the connection and disconnection of the corresponding circuits.

For example, by individually opening a switch on the circuit between a certain of the electrode segments and the bottom electrode, the corresponding electrode segment is enabled to individually generate the electric field, thereby enabling polishing of a certain area of the surface of the first substrate 11 or the second substrate 21; the polishing of the entire surface of the first substrate 11 or the second substrate 21 is achieved by sequentially opening or simultaneously opening switches on the circuit between each of the electrode segments and the bottom electrode in turn so that the corresponding each of the electrode segments can sequentially generate the electric field or simultaneously generate the electric field.

And, the top electrode is disposed on one side of the first substrate 11 or the photomask 20, or the top electrode is disposed on both sides of the first substrate 11 or the photomask 20. A first surface of the photomask 20 is formed with a mask structure 22, and a second surface of the photomask 20 is not formed with a mask structure 22.

When the top electrode 32 is disposed on one side of the first substrate 11 or the photomask 20 (fig. 1 shows that the top electrode 32 is disposed on one side of the photomask 20), the protruding defects on the first surface of the photomask 20 and the protruding defects on the surface of the second substrate 21 may be removed first, and then the first substrate 11 or the photomask 20 may be turned over to remove the protruding defects on the surface of the first substrate 11 or the protruding defects on the second surface of the photomask 20, where the first surface is opposite to the second surface. In this embodiment, the first substrate 11 or the photomask 20 may be fixed on a carrier, and the first surface or the second surface of the first substrate 11 or the photomask 10 is in contact with the carrying surface of the carrier. And, when the stripping and polishing apparatus of the substrate includes the top electrode 32, the bottom electrode, and the power supply 33, the carrier serves as the bottom electrode.

Alternatively, when the top electrode 32 is disposed on both sides of the first substrate 11 or the photomask 20 (the top electrode 32 is disposed on both sides of the photomask 20 as shown in fig. 2), the first substrate 11 or the photomask 20 may be subjected to a double-sided process, that is, the raised defects on the first surface and the second surface of the first substrate 11 may be removed at the same time, or the raised defects on the mask structure 22 on the first surface and the raised defects on the surface of the second substrate 21 of the photomask 20 may be removed at the same time, and the raised defects on the second surface of the photomask 20 may be removed at the same time. In this embodiment, the edge of the first substrate 11 or the photomask 20 may be clamped by a clamping member to support and fix the first substrate 11 or the photomask 20, and the first surface and the second surface of the first substrate 11 or the photomask 20 are not covered, and the clamping member may be a metal frame. And, when the stripping and polishing apparatus of the substrate includes the top electrode 32, the bottom electrode, and the power supply 33, the holding member serves as the bottom electrode.

The first surface is the front surface of the first substrate 11 or the photomask 20, and the second surface is the back surface of the first substrate 11 or the photomask 20; alternatively, the first surface is a back surface of the first substrate 11 or the photomask 20, and the second surface is a front surface of the first substrate 11 or the photomask 20.

When the power supply 33 is a direct current power supply, it is preferable that the film removing and polishing apparatus for a substrate further includes: an alternating current signal generator (not shown) or a pulse signal generator (not shown) connected in series with the power supply 33, the alternating current signal generator and the pulse signal generator being configured to generate a small varying electric field such that the raised defects on the surface of the first substrate 11 or the raised defects on the surface of the mask structure 22 and the second substrate 21 can be removed more easily.

It is further preferred that the frequency component of the ac signal generated by the ac signal generator or the pulse signal generated by the pulse signal generator is equal to the mechanical resonance frequency of the atoms in the mask structure 22 and the stacked atomic layers in the raised defect (i.e. the raised defect on the surface of the first substrate 11 or the raised defect on the surface of the second substrate 21), so that the energy absorbed by the mask structure 22 and the raised defect at resonance is maximized, i.e. the atoms in the mask structure 22 and the stacked atoms in the raised defect are stressed maximally at resonance, thereby making it easier to remove the atoms in the mask structure 22 and the stacked atoms in the raised defect. Wherein the frequency component being equal to the mechanical resonance frequency of the stacked atoms in the mask structure 22 and the raised defect means that the difference between the frequency component and the mechanical resonance frequency is within a set specification, for example less than 10% of the mechanical resonance frequency.

Preferably, the stripping and polishing apparatus for a substrate further includes: an electron generator 36 in communication with the reaction chamber 31, the electron generator 36 being configured to emit electrons towards the surface of the first substrate 11 or the reticle 20 before emitting inert gas ions into the reaction chamber 31 and/or causing the top electrode 32 to generate an electric field, to charge the surface of the first substrate 11 or the reticle 20 such that a point discharge effect at the mask structure 22 and the raised defect is more pronounced, such that an electrostatic discharge of the inert gas ions has a greater force on the mask structure 22 and the raised defect, and/or such that the electric field has a greater force on the raised defect, the mask structure 22 and the raised defect being able to be removed more rapidly. Wherein, since the insulation property of the first substrate 11 or the photo mask 20 to the bottom electrode is good, the emitted electrons can be maintained on the surface of the first substrate 11 or the photo mask 20 for a long enough time.

Wherein, after the inert gas ions are emitted into the reaction chamber 31 and/or the electric field is generated by the top electrode 32, the electron generator 36 stops emitting electrons to the surface of the first substrate 11 or the photomask 20, so as to avoid the emitted electrons from being absorbed by the inert gas ions and/or the electric field and causing the electrons to fail.

Also, the electron generator 36 may be optional to emit electrons to the surface of the first substrate 11 or the reticle 20 when the concentration of inert gas ions emitted into the reaction chamber 31 is sufficiently large and/or the electric field strength generated by the top electrode 32 to the surface of the first substrate 11 or the reticle 20 is large.

Preferably, the stripping and polishing apparatus for a substrate further includes: a temperature controller (not shown) is connected to the bottom electrode, and the temperature controller is used for controlling the temperature of the first substrate 11 or the photomask 20 to be 25-500 ℃, and the high temperature can make it easier to "suck out" or destroy the protruding defects on the surface of the first substrate 11, or make it easier to "ablate" to remove the protruding defects on the surfaces of the mask structure 22 and the second substrate 21. The temperature controller controls the temperature of the first substrate 11 or the photomask 20 by heating the bottom electrode.

The stripping and polishing apparatus of a substrate further includes: a vacuum pumping unit (not shown) in communication with the reaction chamber 31, wherein the vacuum pumping unit is configured to vacuum the reaction chamber 31, and the vacuum environment of the reaction chamber 31 is more beneficial to charging the surface of the first substrate 11 or the photomask 20 by electrons emitted by the electron generator 36; and, the evacuation unit is further configured to evacuate the atoms of the mask structure 22 and the atoms of the bump defect that are removed, for example, atoms C1 at a position A1 shown in fig. 5 are evacuated from the reaction chamber 31 by the evacuation unit in a direction of a dotted arrow after being polished and removed. As shown in fig. 1 and 2, an inlet 311 and an outlet 312 are disposed on a side wall of the reaction chamber 31, inert gas is introduced into the reaction chamber 31 through the inlet 311, and the vacuum pumping unit is communicated with the reaction chamber 31 through the outlet 312.

Preferably, the gas pressure in the reaction chamber 31 is less than 100mTorr.

In addition, the substrate recovery device is simple in design, convenient to operate and free of any chemicals or liquid.

From the foregoing, it can be seen that the present invention provides a stripping and polishing apparatus for a substrate, comprising a remote ionizer, and/or a bottom electrode, a top electrode, and a power source, wherein the remote ionizer is connected to the reaction chamber to emit inert gas ions into the reaction chamber; the top electrode and the bottom electrode are arranged in the reaction chamber, the power supply is arranged outside the reaction chamber, and the power supply is respectively connected with the top electrode and the bottom electrode so as to generate bias voltage between the top electrode and the bottom electrode, so that the top electrode generates an electric field; the inert gas ions are used for selectively discharging and bombarding to remove the mask structure and the protruding defects of the surfaces of the first substrate and the second substrate, the electric field is used for enabling the inert gas ions to accelerate and removing the protruding defects of the surfaces of the first substrate and the second substrate, and then the surfaces of the first substrate and the second substrate have atomic roughness. Therefore, when the first substrate is placed in the reaction chamber, the film removing and polishing device for the substrate can polish the first substrate, so that the roughness of the surface of the first substrate reaches the surface flatness of an atomic level; when the used or abandoned photomask is placed in the reaction chamber, the film removing and polishing device for the substrate provided by the invention can remove the mask structure and the raised defects on the surface of the second substrate in the used or abandoned photomask, so that the film removing and polishing of the second substrate are realized, namely the recycling of the second substrate in the used or abandoned photomask is realized, the step of recycling the second substrate is realized, pattern materials on the substrate are removed from the four existing steps (namely the processes of wet etching, laser ablation or plasma etching and the like are adopted, then, the damaged surface layer of the substrate is removed by adopting a chemical mechanical polishing process, then, the surface of the substrate is polished by adopting a super polishing process, so that the substrate has a smooth surface, then, the surface of the substrate is cleaned by a wet method), the process steps are greatly simplified, and the surface of the substrate is greatly reduced in the roughness grade by adopting the inert gas ions emitted by a remote ion generator and/or the top electrode, the bottom electrode and the electrode generated by a power supply, so that the surface of the substrate is greatly reduced, and the surface of the recycled substrate has the surface is greatly reduced, so that the surface of the substrate is greatly reduced in the roughness grade is obtained.

An embodiment of the present invention provides a method for removing a film and polishing a substrate, referring to fig. 9, the method for removing a film and polishing a substrate includes:

step S1, providing a first substrate or a scrapped photomask, wherein the photomask comprises a second substrate and a mask structure formed on the second substrate;

and S2, polishing the surface of the first substrate by adopting the film removing and polishing device of the substrate or recycling the second substrate of the photomask to obtain a regenerated second substrate.

The method for removing a film and polishing a substrate provided in this embodiment will be described in detail.

According to step S1, a first substrate or a rejected photomask is provided, the photomask comprising a second substrate and a mask structure formed on the second substrate.

The mask structure may be an unpatterned structure, where the mask structure covers the entire surface of the second substrate; alternatively, the mask structure is a patterned structure, where the mask structure covers a portion of the surface of the second substrate and exposes another portion of the surface of the second substrate.

The mask structure may include only a light shielding layer (not shown), or the mask structure may include a phase shift layer (not shown) and a light shielding layer formed on the phase shift layer; alternatively, the mask structure may include a phase shift layer from bottom to top, a light shielding layer, and a photoresist layer.

And, the first substrate and the second substrate have uneven surfaces, i.e., the first substrate and the second substrate have surface defects including convex defects and concave defects.

And according to the step S2, polishing the surface of the first substrate by adopting the film removing and polishing device of the substrate or recycling the second substrate of the photomask to obtain a regenerated second substrate.

The stripping and polishing apparatus for the substrate is described above, and will not be described in detail herein.

When the first substrate is placed in the reaction chamber of the film removing and polishing device of the substrate, polishing the surface of the first substrate by adopting the film removing and polishing device of the substrate, so that the roughness of the polished surface of the first substrate can reach the surface flatness of atomic level; when the used or abandoned photomask is placed in the reaction chamber of the substrate film removing and polishing device, the film removing and polishing device of the substrate is adopted to remove the mask structure and the protruding defects of the surface of the second substrate in the used or abandoned photomask, the film removing and polishing of the second substrate are realized, namely the recycling of the second substrate in the used or abandoned photomask is realized, the step of recycling the second substrate is realized from the four steps (namely the processes of wet etching, laser ablation or plasma etching are adopted to remove pattern materials on the substrate, then the chemical mechanical polishing process is adopted to remove the damaged surface layer of the substrate, then the super polishing process is adopted to polish the surface of the substrate, so that the substrate has a smooth surface, then the wet cleaning of the surface of the substrate is reduced to one step in the invention, the process steps are greatly simplified, and the inert gas ions emitted by a remote ion generator and/or the electrode is/are adopted in the reaction chamber, the top and/or the electrode is/are/is/are generated, the surface of the second electrode is/are greatly reduced, the surface of the substrate is greatly reduced, and the roughness of the surface of the second electrode is greatly recovered is greatly reduced, and the surface of the surface is greatly reduced, and the surface of the grade of the substrate is greatly recovered is greatly reduced.

An embodiment of the present invention provides a method for manufacturing a photomask blank, including:

firstly, a first substrate or a scrapped photomask is provided, the photomask comprises a second substrate and a mask structure formed on the second substrate, and the surface of the first substrate is polished by adopting a stripping and polishing method of the substrate or the second substrate of the photomask is recovered to obtain a regenerated second substrate.

The materials of the first substrate and the second substrate may include at least one of quartz, borosilicate, aluminum silicate, silicon carbide, and the like.

Taking quartz as an example, the step of forming the first substrate and the second substrate may include: firstly, providing a substrate, wherein the substrate can be a quartz ingot; then, synthesizing quartz on the substrate by adopting a chemical vapor deposition process, wherein the principle is that volatile liquid SiCl ₄ Under the drive of the carrier gas, enter H ₂ /O ₂ The combustion gas reacts with water vapor to generate amorphous silicon dioxide, and the amorphous silicon dioxide is deposited on a target material rotating at high temperature and finally melted to form high-purity synthetic quartz; then cutting synthetic quartz according to the required specification, melting and then injecting the synthetic quartz into a mould to obtain quartz with the required shape; then, removing the quartz damaged surface layer by adopting a chemical mechanical polishing process; then, polishing the quartz surface by adopting a super polishing process so that the quartz has a smooth surface; then, the quartz surface is wet cleaned to obtain the first substrate and the second substrate of quartz material.

The method for removing the film and polishing the substrate is described above, and will not be described herein.

Then, a light shielding layer is formed on the polished first substrate or the regenerated second substrate.

The light shielding layer may be formed on the polished first substrate or the regenerated second substrate using a sputter deposition process.

The light shielding layer may be made of Cr, cr oxide (such as CrO ₂ ) At least one of CrON, etc.

And then forming a photoresist layer on the shading layer to obtain the non-pattern photomask base plate.

The photoresist layer may be formed on the light shielding layer by a spin coating process.

Preferably, before forming the light shielding layer on the first substrate or the regenerated second substrate, the method of manufacturing a photomask blank may further include: and forming a phase shift layer on the polished first substrate or the regenerated second substrate, wherein the light shielding layer is positioned on the phase shift layer.

The phase shift layer may be formed on the first substrate or the regenerated second substrate after polishing using a sputter deposition process.

The material of the phase shift layer may comprise MoSi _x 、MoSi _x O _y 、MoSi _x O _y N _z 、MoSi _x O _y C _v N _z At least one of the following.

Preferably, before forming the phase shift layer on the polished first substrate or the regenerated second substrate, the method of manufacturing a photomask blank may further include: a spin-on carbon layer is formed on the front and/or back of the polished first substrate or the regenerated second substrate to bury the defects of the polished first substrate or the regenerated second substrate surface and to provide a planar process surface.

The step of forming the spin-on carbon layer on the polished first substrate or the regenerated second substrate may include: firstly, spin-coating a carbon material on the polished first substrate or the regenerated second substrate, wherein the thickness of the spin-coated carbon material is preferably 5-20 nm; the carbon material is then baked to form the spin-on carbon layer, preferably at a temperature of 100-250 ℃.

When the film removing and polishing method of the substrate is adopted to polish the surface of the first substrate, the roughness of the polished surface of the first substrate can reach the surface flatness of atomic level; when the second substrate of the used or abandoned photomask is recovered by adopting the film removing and polishing method of the substrate to obtain a regenerated second substrate, the step of recovering the second substrate is realized by adopting the processes of wet etching, laser ablation or plasma etching and the like to remove pattern materials on the substrate, then the damaged surface layer of the substrate is removed by adopting the chemical mechanical polishing process, then the surface of the substrate is polished by adopting the super polishing process to ensure that the substrate has a smooth surface, then the surface of the substrate is cleaned by adopting the wet method, so that the process step is greatly simplified, the recovery of the second substrate can be realized by only emitting inert gas ions, the process type is simplified, the cost is obviously reduced, and the roughness of the surface of the recovered second substrate reaches the surface flatness of atomic level.

An embodiment of the present invention provides a method for manufacturing a photomask, including:

first, a photomask blank without patterns is formed by the method for manufacturing a photomask blank.

The method for manufacturing the photomask substrate is described above, and will not be described herein.

The photoresist layer is then patterned such that the photoresist layer is formed as a patterned photoresist layer.

Wherein the photoresist layer may be exposed and developed by a laser or electron beam or the like to form a patterned photoresist layer.

And then, etching the light shielding layer by taking the patterned photoresist layer as a mask so as to form the patterned light shielding layer on the polished first substrate or the regenerated second substrate.

Wherein, dry etching or wet etching process can be adopted; the pattern of the patterned light shielding layer may be the same or different from the pattern of the light shielding layer in the patterned mask structure prior to recycling the second substrate.

And then, removing the patterned photoresist layer to obtain the photomask with the pattern.

Wherein the patterned photoresist layer may be removed using an ashing process.

When a phase shift layer is further formed between the polished first substrate or the regenerated second substrate and the light shielding layer, the patterned photoresist layer is used as a mask to etch the light shielding layer, then the phase shift layer is etched, and the etched light shielding layer and the etched phase shift layer may have the same or different patterns. If the etched shading layer and the etched phase shift layer have the same pattern, the same patterned photoresist layer is used as a mask during etching; if the shading layer after etching and the phase shift layer after etching have different patterns, the shading layer and the phase shift layer take patterned photoresist layers with different patterns as masks during etching.

In addition, the manufacturing method of the photomask plate can further comprise the following steps: and cleaning the photomask.

The photomask substrate is formed by adopting the manufacturing method of the photomask substrate, so that the cost for manufacturing the photomask is reduced, and the quality of the photomask is improved.

The above description is only illustrative of the preferred embodiments of the present invention and is not intended to limit the scope of the present invention, and any alterations and modifications made by those skilled in the art based on the above disclosure shall fall within the scope of the appended claims.

Claims

1. A stripping and polishing apparatus for a substrate, comprising:

2. The apparatus for stripping and polishing a substrate as recited in claim 1, wherein said reaction chamber contains an inert gas, and wherein said electric field is further configured to ionize said inert gas into inert gas ions.

3. The apparatus of claim 1, wherein the top electrode comprises a unitary electrode for generating an electric field perpendicular to the first substrate or the reticle surface and/or a segmented electrode for generating an electric field at an oblique angle or a rotating electric field with respect to the first substrate or the reticle surface.

4. A substrate stripping and polishing apparatus as recited in claim 3, wherein said segmented electrode includes a plurality of electrode segments, each of said electrode segments being individually connected to said power source therebetween to enable each of said electrode segments to individually or sequentially generate said electric field.

5. The apparatus of claim 4, wherein when the top electrode comprises the segmented electrode, the apparatus further comprises a charge control capacitor, wherein each of the electrode segments and the bottom electrode is individually connected with one of the charge control capacitors, and the charge control capacitors are respectively switchably connected with the power source and the electrode segments, such that the power source charges the charge control capacitors, and the charge control capacitors generate the electric field after discharging the electrode segments.

6. The apparatus for removing film and polishing a substrate as recited in claim 1, wherein the power source is a direct current power source, the apparatus for removing film and polishing a substrate further comprising:

7. The apparatus according to claim 6, wherein a frequency component of the alternating current signal generated by the alternating current signal generator or the pulse signal generated by the pulse signal generator is equal to a mechanical resonance frequency of atoms in the mask structure and stacked atoms in the raised defect.

8. The apparatus according to claim 1, wherein the top electrode is provided on both sides of the first substrate or the photomask.

9. The apparatus for removing film and polishing a substrate as recited in claim 1, wherein the apparatus for removing film and polishing a substrate further comprises:

10. The apparatus for removing film and polishing a substrate as recited in claim 1, wherein the apparatus for removing film and polishing a substrate further comprises:

11. The apparatus for removing film and polishing a substrate as recited in claim 1, wherein the apparatus for removing film and polishing a substrate further comprises:

12. A method of stripping and polishing a substrate, comprising:

polishing the surface of the first substrate with the stripping and polishing apparatus of the substrate according to any one of claims 1 to 11 or recycling the second substrate of the photomask to obtain a regenerated second substrate.

13. A method of manufacturing a photomask blank, comprising:

Providing a first substrate or a scrapped photomask, polishing the surface of the first substrate by adopting the method for stripping and polishing the substrate according to claim 12 or recycling a second substrate of the photomask to obtain a regenerated second substrate;

forming a photoresist layer on the shading layer.

14. The method of manufacturing a photomask blank according to claim 13, wherein before forming the light-shielding layer on the polished first substrate or the regenerated second substrate, the method further comprises:

15. The method of manufacturing a photomask blank according to claim 14, wherein prior to forming the phase shift layer on the polished first substrate or the regenerated second substrate, the method of manufacturing a photomask blank further comprises:

16. A method of manufacturing a photomask, comprising:

forming a photomask blank by the method of manufacturing a photomask blank according to any of claims 13 to 15;

and removing the patterned photoresist layer.

17. The method of claim 16, wherein a phase shift layer is further formed between the polished first substrate or the regenerated second substrate and the light shielding layer, and the phase shift layer is further etched after the light shielding layer is etched using the patterned photoresist layer as a mask.