CN117558701A - Intelligent power module - Google Patents

Intelligent power module Download PDF

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Publication number
CN117558701A
CN117558701A CN202311623130.6A CN202311623130A CN117558701A CN 117558701 A CN117558701 A CN 117558701A CN 202311623130 A CN202311623130 A CN 202311623130A CN 117558701 A CN117558701 A CN 117558701A
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CN
China
Prior art keywords
pin
power
substrate
chip
pins
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202311623130.6A
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Chinese (zh)
Inventor
李正凯
杨景城
刘剑
谢地林
成章明
周文杰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hisense Home Appliances Group Co Ltd
Original Assignee
Hisense Home Appliances Group Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hisense Home Appliances Group Co Ltd filed Critical Hisense Home Appliances Group Co Ltd
Priority to CN202311623130.6A priority Critical patent/CN117558701A/en
Publication of CN117558701A publication Critical patent/CN117558701A/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49517—Additional leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49575—Assemblies of semiconductor devices on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other

Abstract

The invention discloses an intelligent power module, which comprises a substrate, a frame, a power chip, a driving chip and a first conductive piece, wherein the frame is positioned at one side of the thickness direction of the substrate, the frame comprises a base island, control pins and power pins, and the control pins and the power pins are distributed along the width direction of the substrate; the power chip is arranged on the substrate and is suitable for being connected with the control pin and the power pin; the driving chip is arranged on the base island and connected with the control pin; the first conductive piece is located between the base plate and the frame, and two ends of the first conductive piece are respectively connected with the power pins and the power chip. According to the intelligent power module, the aluminum wire welding process is saved, so that the packaging efficiency of the intelligent power module can be improved.

Description

Intelligent power module
Technical Field
The invention relates to the technical field of intelligent power modules, in particular to an intelligent power module.
Background
In the related art, in the production process of the intelligent power module, an emitter electrode of the IGBT chip is bonded to a positive electrode of the FRD chip by adopting a thick-wire-diameter aluminum wire and then bonded to a power pin of the frame, and a grid electrode of the power chip is bonded to a control pin of the frame by adopting a thin-wire-diameter aluminum wire, wherein the wire diameter needs to be switched twice, the aluminum wire is more in quantity, the time is extremely consumed, the efficiency is low, and in the welding process, the risks of crater, bonding non-stick, failure and the like possibly exist. In addition, the power pins of the existing intelligent power module are required to be welded on the substrate after being bent, and the control pins are required to be bonded with the driving chip, so that the size of the substrate is limited between the control pins and the power pins.
Disclosure of Invention
The present invention aims to solve at least one of the technical problems existing in the prior art. Therefore, an object of the present invention is to provide an intelligent power module, which improves the packaging efficiency of the intelligent power module, and the two sides of the substrate in the width direction can be expanded to the edge of the plastic package shell, thereby improving the heat dissipation efficiency of the intelligent power module
According to an embodiment of the invention, an intelligent power module comprises: a substrate; the frame is positioned on one side of the thickness direction of the substrate and comprises a base island, control pins and power pins, and the control pins and the power pins are arranged along the width direction of the substrate; the power chip is arranged on the substrate and is suitable for being connected with the control pin and the power pin; the driving chip is arranged on the base island and is connected with the control pin; the first conductive piece is positioned between the substrate and the frame, and two ends of the first conductive piece are respectively connected with the power pin and the power chip.
According to the intelligent power module provided by the embodiment of the invention, the first conductive piece is arranged between the substrate and the frame, and two ends of the first conductive piece are respectively connected with the power pin and the power chip. Therefore, compared with the traditional intelligent power module, the aluminum wire welding process is saved, so that the packaging efficiency of the intelligent power module can be improved, the two sides of the width direction of the substrate can be expanded to the edge of the plastic package shell, and the heat dissipation efficiency of the intelligent power module is improved.
According to some embodiments of the invention, the power chip is an RC-IGBT chip having an emitter, and two ends of the first conductive member are respectively connected to the emitter and the power pin, wherein a cross-sectional area of the first conductive member is smaller than a cross-sectional area of the emitter; or the power chip is a MOSFET chip, the MOSFET chip is provided with a source electrode, two ends of the first conductive piece are respectively connected with the source electrode and the power pin, and the cross section area of the first conductive piece is smaller than that of the source electrode.
According to some embodiments of the invention, the power chip is disposed adjacent to the control pin in a width direction of the substrate; the power pins comprise first power pins, the end parts of the first power pins extend to the control pins in the width direction of the substrate, and the first conductive pieces are arranged at the end parts of the first power pins; the control pins comprise a high-voltage control pin and a low-voltage control pin, the first power pin comprises a high-voltage power pin and a low-voltage power pin, the high-voltage power pin is connected with the high-voltage control pin in the width direction of the substrate, and the low-voltage power pin is spaced apart from the low-voltage control pin in the width direction of the substrate.
According to some embodiments of the invention, the control pin comprises a first control pin, and the smart power module further comprises: the second conductive piece is positioned between the substrate and the frame, and two ends of the second conductive piece are respectively connected with the power chip and the first control pin; the power chip is provided with a grid, and two ends of the second conductive piece are respectively connected with the grid and the first control pin, wherein the cross section area of the second conductive piece is smaller than that of the grid.
According to some embodiments of the invention, the cross-sectional area of the second conductive member is smaller than the cross-sectional area of the first conductive member.
According to some embodiments of the invention, the smart power module further comprises: and the third conductive piece is connected between the substrate and the power pin and is adjacent to the edge of one side of the substrate far away from the control pin.
According to some embodiments of the invention, the cross-sectional area of the third conductive member is less than or equal to the cross-sectional area of the first conductive member.
According to some embodiments of the invention, the first conductive member is connected to the power pin by means of ultrasonic welding, solder paste welding or sintering, and/or the second conductive member is connected to the first control pin by means of ultrasonic welding, solder paste welding or sintering, and/or the third conductive member is connected to the power pin by means of ultrasonic welding, solder paste welding or sintering.
According to some embodiments of the invention, each control pin comprises a first pin segment and a second pin segment connected to each other, the second pin segment being located on a side of the first pin segment remote from the substrate, the first pin segment being located within a plastic package, the second pin segment being located outside the plastic package; each power pin comprises a third pin section and a fourth pin section which are connected with each other, wherein the fourth pin section is positioned on one side of the third pin section, which is far away from the substrate, the third pin section is positioned in the plastic package shell, and the fourth pin section is positioned outside the plastic package shell;
the first pin segment is arranged on one side surface of the substrate, the third pin segment is arranged on one side surface of the substrate, and the base island is arranged on one side surface of the substrate.
According to some embodiments of the invention, one end of the substrate in the width direction extends to one end of the base island adjacent to the control pin, and the other end of the substrate in the width direction extends to one end of the third pin segment adjacent to the fourth pin segment.
According to some embodiments of the invention, the power chips are a plurality of, the power chips are spaced apart in the length direction of the substrate, and adjacent two of the power chips are staggered in the width direction of the substrate.
Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.
Drawings
The foregoing and/or additional aspects and advantages of the invention will become apparent and may be better understood from the following description of embodiments taken in conjunction with the accompanying drawings in which:
FIG. 1 is a schematic diagram of a framework of a smart power module according to an embodiment of the invention;
FIG. 2 is a top view of a frame of the smart power module shown in FIG. 2;
FIG. 3 is a side view of a frame of the smart power module shown in FIG. 1;
FIG. 4 is a schematic diagram of a smart power module according to an embodiment of the present invention, wherein the plastic enclosure is not shown;
FIG. 5 is a top view of the smart power module shown in FIG. 3, with the plastic enclosure not shown;
FIG. 6 is a schematic diagram of a smart power module according to an embodiment of the invention;
FIG. 7 is a schematic diagram of another angle of a smart power module according to an embodiment of the present invention;
FIG. 8 is a cross-sectional view of a smart power module according to an embodiment of the present invention;
fig. 9 is a schematic diagram of a substrate and a power chip of a smart power module according to an embodiment of the invention.
Reference numerals:
100: an intelligent power module;
10: a substrate; 101: a functional area; 1011: a first region; 1012: a second region; 1013: a third region; 1014: a fourth region; 102: a first copper layer; 103: a ceramic layer; 104: a second copper layer; 20: a frame; 201: a base island; 202: a control pin; 2021: a low voltage control pin; 2022: a high voltage control pin; 2023: a first control pin; 2024: a first pin segment; 2025: a second pin segment; 203: a power pin; 2031: a first power pin; 2032: a high voltage power pin; 2033: a low voltage power pin; 2034: a third pin segment; 2035: a fourth pin segment; 30: a power chip; 301: an emitter; 302: a gate; 303: a high voltage power chip; 304: a low voltage power chip; 305: a source electrode; 40: a driving chip; 401: a low voltage driving chip; 403: a high voltage driving chip; 404: a bootstrap diode; 501: a first conductive member; 502: a second conductive member; 503: a third conductive member; 60: and (5) plastic packaging the shell.
Detailed Description
An intelligent power module 100 according to an embodiment of the present invention is described below with reference to fig. 1-9
As shown in fig. 1 to 9, the intelligent power module 100 according to the embodiment of the present invention includes a substrate 10, a frame 20, a power chip 30, a driving chip 40, and a first conductive member 501.
Specifically, the frame 20 is located on one side in the thickness direction (e.g., the left-right direction in fig. 8) of the substrate 10, the frame 20 includes a base 201, control pins 202, and power pins 203, and the control pins 202 and the power pins 203 are arranged in the width direction (e.g., the up-down direction in fig. 5) of the substrate 10. A power chip 30 is provided on the substrate 10, the power chip 30 being adapted to be connected to the control pins 202 and the power pins 203. The driving chip 40 is disposed on the base island 201, and the driving chip 40 is connected to the control pins 202. The first conductive member 501 is located between the substrate 10 and the frame 20, and two ends of the first conductive member 501 are connected to the power pins 203 and the power chip 30, respectively.
For example, in the example of fig. 1-8, the substrate 10, the island 201, the power chip 30, the driving chip 40, and the first conductive member 501 are all disposed within the plastic package case 60. The surface of the substrate 10 far away from the frame 20 is flush with the bottom surface of the plastic package housing 60 and is exposed outside the plastic package housing 60, and when the power chip 30 works to generate heat, the heat can be transferred to the surface and exchange heat with the outside, so as to realize heat dissipation of the intelligent power module 100. The two sides of the plastic package housing 60 in the width direction are a control side and a power side, the control pin 202 is located at the control side, and one end of the control pin 202 extends into the plastic package housing 60 for connecting with the power chip 30 or the driving chip 40. One end of the power pin 203 extends into the plastic package housing 60 for connection with the power chip 30 or the substrate 10, and the other end of the power pin 203 extends out of the plastic package housing 60 from the power side.
The base 201 is disposed adjacent to the control side of the plastic package body 60, and the driving chip 40 is disposed on a side of the base 201 away from the substrate 10. For example, the number of islands 201 is seven, and the seven islands 201 are spaced apart in the longitudinal direction (e.g., the left-right direction in fig. 5) of the substrate 10. The driving chip 40 includes one low voltage driving chip 401, three high voltage driving chips 403, and three bootstrap diodes 404, and the high voltage driving chip 403 and the bootstrap diodes 404 are connected to the control pins 202 through gold wires or copper wires. The low-voltage driving chip 401 is disposed on the outermost island 201 among the seven islands 201, the low-voltage driving chip 401 may be connected to the control pin 202 through a gold wire or a copper wire, and the three high-voltage driving chips 403 and the three bootstrap diodes 404 are respectively disposed on the remaining six islands 201. Of course, the control pin 202 and the low voltage driving chip 401 and the high voltage driving chip 402 may be connected by other materials with small resistivity.
The driving chip 40, the frame 20, the first conductive members 501, the power chip 30 and the substrate 10 are sequentially arranged along the thickness direction of the substrate 10, the number of the first conductive members 501 is the same as the number of the power chips 30, and the power pins 203 are connected with the power chips 30 through the first conductive members 501. Therefore, the first conductive member 501 can support the substrate 10 and the frame 20 while conducting electricity, so as to avoid the relative movement of the substrate 10 and the frame 20, and make the structure of the intelligent power module 100 more stable.
During processing, the first conductive member 501 may be connected to the power pin 203, the power chip 30 may be pre-fixed on the substrate 10 by silver paste, and the driving chip 40 may be pre-fixed on the island 201 by silver paste; then sintering is carried out to stably fix the power chip 30 on the substrate 10 and stably fix the driving chip 40 on the base island 201; then, coating silver paste on the power chip 30 for connecting with the first conductive piece 501, and then sintering to ensure that the power chip 30 is stably connected with the first conductive piece 501; finally, injection molding is performed to obtain the intelligent power module 100. Therefore, by arranging the first conductive piece 501, the aluminum wire welding process can be saved, the replacement of wires is avoided, the phenomena of crater, bonding non-sticking, failure and the like are avoided, and the packaging efficiency of the intelligent power module 100 is improved.
According to the intelligent power module 100 of the embodiment of the present invention, by disposing the first conductive member 501 between the substrate 10 and the frame 20, both ends of the first conductive member 501 are respectively connected to the power pins 203 and the power chip 30. Thereby, compared to the conventional intelligent power module, an aluminum wire welding process is saved, so that the packaging efficiency of the intelligent power module 100 can be improved.
According to some embodiments of the present invention, as shown in fig. 4 and 9, the power chip 30 is an RC-IGBT (reverse conducting insulated gate bipolar transistor) chip having an emitter 301, and both ends of a first conductive member 501 are connected to the emitter 301 and the power pin 203, respectively. Wherein the cross-sectional area of the first conductive member 501 is smaller than the cross-sectional area of the emitter 301. By this arrangement, the first conductive member 501 is prevented from being connected to other positions of the RC-IGBT chip through silver paste while ensuring that the first conductive member 501 can be connected to the emitter 301, so that the occurrence of a short circuit can be prevented.
Alternatively, the power chip 30 is a MOSFET (metal oxide semiconductor field effect transistor) chip, which has a source 305, and two ends of the first conductive member 501 are respectively connected to the source 305 and the power pin 203, wherein the cross-sectional area of the first conductive member 501 is smaller than the cross-sectional area of the source 305. By this arrangement, the first conductive member 501 is prevented from being connected to other positions of the MOSFET chip through silver paste while the first conductive member 501 is ensured to be connected to the source electrode 305, so that the occurrence of a short circuit can be prevented.
In this way, the types of the power chips 30 can be selected according to the use situations of the intelligent power module 100, the intelligent power module 100 has more various structures, and the intelligent power module 100 has more applicable situations.
Further, the power chip 30 is disposed adjacent to the control pin 202 in the width direction of the substrate 10, so that the distance between the driving chip 40 and the power chip 30 can be shortened, which is advantageous for connecting the control pin 202 to the power chip 30.
The power pins 203 include first power pins 2031, and ends of the first power pins 2031 extend to the control pins 202 in the width direction of the substrate 10. The first conductive member 501 is disposed at an end of the first power pin 2031, and the end of the first power pin 2031 is near an end of the first power pin 2031 adjacent to the control pin 202.
Referring to fig. 1 to 5, the number of power pins 203 is eight, the eight power pins 203 are spaced apart in the width direction of the substrate 10, six of the eight power pins 203 are first power pins 2031, and each first power pin 2031 extends in the width direction of the substrate 10. One end of each first power pin 2031 extends into the plastic package housing 60 and along the direction extending to the vicinity of the control pin 202, and the first conductive member 501 is disposed on the side of the end of the first power pin 2031 adjacent to the substrate 10, so that the first conductive member 501 is connected to the power chip 30. The other end of each first power pin 2031 protrudes from the power side of the plastic package case 60 outside the plastic package case 60. Thereby, the length of the first power pin 2031 is increased, so that the structural strength of the frame 20 can be improved.
Further, the control pins 202 include a high-voltage control pin 2022 and a low-voltage control pin 2021, the first power pin 2031 includes a high-voltage power pin 2032 and a low-voltage power pin 2033, the high-voltage power pin 2032 is connected to the high-voltage control pin 2022 in the width direction of the substrate 10, and the low-voltage power pin 2033 is spaced apart from the low-voltage control pin 2021 in the width direction of the substrate 10. For example, in the example of fig. 1-8, six first power pins 2031 include three low-voltage power pins 2033 and three high-voltage power pins 2032, one first conductive element 501 is provided on each low-voltage power pin 2033, and the low-voltage power pins 2033 are connected to the emitter 301 of the low-voltage power chip 304 through the first conductive element 501. The three high voltage power pins 2032 are respectively connected to the three high voltage control pins 2022, each high voltage power pin 2032 is provided with a first conductive element 501 and a third conductive element 503, the first conductive element 501 is located approximately at the connection between the high voltage power pin 2032 and the high voltage control pin 2022, and the third conductive element 503 is adjacent to the edge of the substrate 10. Thus, the high voltage power pin 2032 and the high voltage control pin 2022 can share one conductive member, which saves the number of conductive members, can further improve the structural strength of the frame 20, and can reduce the weight of the intelligent power module 100.
According to some embodiments of the present invention, the control pins 202 include a first control pin 2023, and the smart power module 100 further includes a second conductive member 502, where the second conductive member 502 is located between the substrate 10 and the frame 20, and two ends of the second conductive member 502 are respectively connected to the power chip 30 and the first control pin 2023. As shown in fig. 1 to 5, the first control pins 2023 and the second conductive members 502 are six, the second conductive members 502 are located at the ends of the first control pins 2023, that is, the second conductive members 502 are located near one end of the first control pins 2023 adjacent to the power pins 203, two of the six first control pins 2023 are located at one end of the substrate 10 in the length direction, the two first control pins 2023 are spaced apart in the width direction of the substrate 10, the free ends of the two first control pins 2023 extend from one side of the substrate 10 in the length direction, the remaining four first control pins 2023 are spaced apart in the length direction of the substrate 10, and the free ends of the four first control pins 2023 extend from one side of the substrate 10 in the width direction.
Therefore, through the second conductive piece 502, the electric connection between the first control pin 2023 and the power chip 30 can be realized, the aluminum wire welding process is saved, the replacement of wires is avoided, the phenomena of crater, bonding non-sticking station, failure and the like can be avoided, the packaging efficiency of the intelligent power module 100 is improved, meanwhile, the second conductive piece 502 can further support the substrate 10 and the frame 20, the relative movement of the substrate 10 and the frame 20 is avoided, and the structure of the intelligent power module 100 is more stable.
Note that, the three low-voltage power pins 2033 are also the first control pins 2023.
Further, as shown in fig. 1-5, the power chip 30 has a gate 302, and two ends of the second conductive member 502 are respectively connected to the gate 302 and the first control pin 2023. Wherein the cross-sectional area of the second conductive member 502 is smaller than the cross-sectional area of the gate electrode 302. By this arrangement, the second conductive member 502 is prevented from being connected to other positions of the power chip 30 through silver paste while ensuring that the second conductive member 502 can be connected to the gate electrode 302, so that a short circuit can be prevented from occurring.
According to some embodiments of the invention, the cross-sectional area of the second conductive member 502 is smaller than the cross-sectional area of the first conductive member 501. Since the size of the gate 302 on the power chip 30 is smaller than the size of the emitter 301, by making the cross-sectional area of the second conductive member 502 smaller than the cross-sectional area of the first conductive member 501, the size of the second conductive member 502 can be adapted to the size of the gate 302, the size of the first conductive member 501 can be adapted to the size of the emitter 301, and the space between the emitter 301 and the gate 302 is smaller, and the cross-sectional area of the second conductive member 502 is smaller, so that the connection of the second conductive member 502 to the emitter 301 can be avoided.
According to some embodiments of the present invention, referring to fig. 1-5, the smart power module 100 further comprises a third conductive member 503, the third conductive member 503 being connected between the substrate 10 and the power pin 203. For example, the number of the third conductive members 503 is four, and the four third conductive members 503 are respectively disposed on one side of the four power pins 203 adjacent to the substrate 10, and the electrical connection between the substrate 10 and the power pins 203 can be achieved through the third conductive members 503. The three third conductive members 503 are respectively disposed on the three first power pins 2031, and the three third conductive members 503 are disposed adjacent to an edge of the substrate 10, which is far away from the control pin 202, that is, the three third conductive members 503 are disposed adjacent to a power side of the plastic package housing 60, at this time, the third conductive members 503 can be matched with the first conductive members 501 to support two sides of the power pins 203 in a length direction, and the power pins 203 do not need to be bent to be connected with the substrate 10, so that a size of the substrate 10 is not limited between the control pin 202 and the power pins 203, and two sides of the substrate 10 in a width direction in the application can be extended to an edge of the plastic package housing 60, so that a size of the substrate 10 is increased, and a heat dissipation efficiency of the intelligent power module 100 can be improved.
Further, the cross-sectional area of the third conductive member 503 is equal to or smaller than the cross-sectional area of the first conductive member 501. Wherein, when the cross-sectional area of the third conductive member 503 is equal to the cross-sectional area of the first conductive member 501, the third conductive member 503 and the first conductive member 501 have the same structure, and the third conductive member 503 and the first conductive member 501 can be interchanged, thereby reducing the kinds of components. When the cross-sectional area of the third conductive member 503 is smaller than that of the first conductive member 501, the size of the third conductive member 503 can be reduced and the weight of the frame 20 can be reduced while ensuring that the third conductive member 503 can be connected to the substrate 10 and the power pins 203.
In some alternative embodiments, the first conductive member 501 is connected to the power pin 203 by ultrasonic welding, solder paste welding, or sintering, and/or the third conductive member 503 is connected to the power pin 203 by ultrasonic welding, solder paste welding, or sintering. The connection modes of the first conductive element 501 and the third conductive element 503 and the power pin 203 are the same, and one of an ultrasonic welding mode, a solder paste welding mode and a sintering mode can be adopted; alternatively, the connection modes of the first conductive member 501 and the third conductive member 503 and the power pin 203 are different, and any two of an ultrasonic welding mode, a solder paste welding mode, and a sintering mode may be adopted. Therefore, the connection mode of the first conductive member 501 and the third conductive member 503 and the power pin 203 is the same and simple, the operation is convenient, and the packaging efficiency of the intelligent power module 100 can be further improved.
Likewise, the second conductive member 502 is connected to the first control pin 2023 by ultrasonic welding, solder paste welding, or sintering. So arranged, the connection mode of the second conductive member 502 and the first control pin 2023 is the same and simple, the operation is convenient, and the packaging efficiency of the intelligent power module 100 can be further improved
According to some embodiments of the present invention, referring to fig. 4 and 6, each control pin 202 includes a first pin segment 2024 and a second pin segment 2025 connected to each other, the second pin segment 2025 being perpendicular to the first pin segment 2024 and located on a side of the first pin segment 2024 remote from the substrate 10, the first pin segment 2024 being located within the plastic package housing 60, the second pin segment 2025 being located outside the plastic package housing 60. Likewise, each power pin 203 includes a third pin segment 2034 and a fourth pin segment 2035 connected to each other, the fourth pin segment 2035 being perpendicular to the third pin segment 2034 and on a side of the third pin segment 2034 remote from the substrate 10, the third pin segment 2034 being located within the plastic housing 60, the fourth pin segment 2035 being located outside of the plastic housing 60.
Wherein, the side surface of the first lead segment 2024 away from the substrate 10, the side surface of the third lead segment 2034 away from the substrate 10, and the side surface of the island 201 away from the substrate 10 are flush in the thickness direction of the substrate 10.
One end of the board 10 in the width direction extends to one end of the base island 201 adjacent to the control pin 202, and the other end of the board 10 in the width direction extends to one end of the third pin segment 2034 adjacent to the fourth pin segment 2035. Therefore, the size of the substrate 10 is not limited between the control pins 202 and the power pins 203, and two sides of the substrate 10 in the width direction in the application can be extended to the edge of the plastic package housing 60, so that the size of the substrate 10 is increased, and the heat dissipation efficiency of the intelligent power module 100 can be improved.
According to some embodiments of the invention, the power chip 30 is plural, and in the description of the invention, "plural" means two or more. The plurality of power chips 30 are spaced apart in the length direction of the substrate 10. For example, in the example of fig. 1 to 8, the wiring layer of the substrate 10 is divided into four functional areas 101, the four functional areas 101101 are spaced apart along the length direction of the substrate 10, the four functional areas 101 are sequentially a first area 1011, a second area 1012, a third area 1013, and a fourth area 1014 along the length direction of the substrate 10, one low voltage power chip 304 is disposed in each of the first area 1011, the second area 1012, and the third area 1013, three high voltage power chips 303 are disposed in the fourth area 1014, and the three high voltage power chips 303 are spaced apart along the length direction of the substrate 10.
Wherein adjacent two power chips 30 are staggered in the width direction of the substrate 10. Specifically, referring to fig. 5, two adjacent low-voltage power chips 304 are offset in the width direction of the substrate 10 (i.e., the low-voltage power chips 304 of the first region 1011 and the second region 1012), two adjacent high-voltage power chips 303 are offset in the width direction of the substrate 10 (i.e., the high-voltage power chips 303 of the fourth region 1014), and two adjacent low-voltage power chips 304 are offset in the width direction of the substrate 10 (i.e., the low-voltage power chips 304 of the third region 1013 and the high-voltage power chips 303 of the fourth region 1014). Therefore, the power chips 30 can be uniformly distributed on the substrate 10, so that the heat generated by the operation of the power chips 30 can be uniformly distributed on the substrate 10, and the heat dissipation efficiency of the intelligent power module 100 can be further improved.
Optionally, the substrate 10 may be a ceramic copper-clad plate, where the ceramic copper-clad plate includes a first copper layer 102 (circuit layer), a ceramic layer 103 (insulating layer) and a second copper layer 104 arranged along a thickness direction, the power chip 30 is connected with the first copper layer 102, a side surface of the second copper layer 104 far away from the power chip 30 is flush with a bottom surface of the plastic package shell 60 and exposed outside the plastic package shell 60, when the power chip 30 works to generate heat, the heat can be transferred to the second copper layer 104 through the first copper layer 102 and the ceramic layer 103, and the second copper layer 104 exchanges heat with the outside to realize heat dissipation of the intelligent power module 100.
Other configurations and operations of the intelligent power module 100 according to embodiments of the present invention are known to those of ordinary skill in the art and will not be described in detail herein.
In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. indicate orientations or positional relationships based on the drawings are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the apparatus or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention.
In the description of the present application, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art in a specific context.

Claims (11)

1. An intelligent power module, comprising:
a substrate;
the frame is positioned on one side of the thickness direction of the substrate and comprises a base island, control pins and power pins, and the control pins and the power pins are arranged along the width direction of the substrate;
the power chip is arranged on the substrate and is suitable for being connected with the control pin and the power pin;
the driving chip is arranged on the base island and is connected with the control pin;
the first conductive piece is positioned between the substrate and the frame, and two ends of the first conductive piece are respectively connected with the power pin and the power chip.
2. The intelligent power module according to claim 1, wherein the power chip is an RC-IGBT chip having an emitter, and two ends of the first conductive member are respectively connected to the emitter and the power pin, wherein a cross-sectional area of the first conductive member is smaller than a cross-sectional area of the emitter; or (b)
The power chip is a MOSFET chip, the MOSFET chip is provided with a source electrode, two ends of the first conductive piece are respectively connected with the source electrode and the power pin, and the cross section area of the first conductive piece is smaller than that of the source electrode.
3. The intelligent power module according to claim 2, wherein the power chip is disposed adjacent to the control pin in a width direction of the substrate;
the power pins comprise first power pins, the end parts of the first power pins extend to the control pins in the width direction of the substrate, and the first conductive pieces are arranged at the end parts of the first power pins;
the control pins comprise a high-voltage control pin and a low-voltage control pin, the first power pin comprises a high-voltage power pin and a low-voltage power pin, the high-voltage power pin is connected with the high-voltage control pin in the width direction of the substrate, and the low-voltage power pin is spaced apart from the low-voltage control pin in the width direction of the substrate.
4. The intelligent power module according to claim 2, wherein the control pins comprise a first control pin,
the intelligent power module further comprises:
the second conductive piece is positioned between the substrate and the frame, and two ends of the second conductive piece are respectively connected with the power chip and the first control pin;
the power chip is provided with a grid, two ends of the second conductive piece are respectively connected with the grid and the first control pin,
wherein the cross-sectional area of the second conductive member is smaller than the cross-sectional area of the gate.
5. The smart power module of claim 4 wherein the cross-sectional area of the second conductive member is smaller than the cross-sectional area of the first conductive member.
6. The intelligent power module of claim 4, further comprising:
and the third conductive piece is connected between the substrate and the power pin and is adjacent to the edge of one side of the substrate far away from the control pin.
7. The intelligent power module of claim 6, wherein the cross-sectional area of the third conductive member is less than or equal to the cross-sectional area of the first conductive member.
8. The intelligent power module according to claim 6, wherein the first conductive member is connected to the power pin by ultrasonic welding, solder paste welding or sintering, and/or
The second conductive piece is connected with the first control pin by an ultrasonic welding mode, a solder paste welding mode or a sintering mode, and/or
The third conductive piece is connected with the power pin in an ultrasonic welding mode, a solder paste welding mode or a sintering mode.
9. The smart power module of claim 1, wherein each control pin comprises a first pin segment and a second pin segment connected to each other, the second pin segment being located on a side of the first pin segment remote from the substrate, the first pin segment being located within a plastic enclosure, the second pin segment being located outside of the plastic enclosure; each power pin comprises a third pin section and a fourth pin section which are connected with each other, wherein the fourth pin section is positioned on one side of the third pin section, which is far away from the substrate, the third pin section is positioned in the plastic package shell, and the fourth pin section is positioned outside the plastic package shell;
the first pin segment is arranged on one side surface of the substrate, the third pin segment is arranged on one side surface of the substrate, and the base island is arranged on one side surface of the substrate.
10. The smart power module of claim 9 wherein one end of the substrate in the width direction extends to one end of the base island adjacent the control pin and the other end of the substrate in the width direction extends to one end of the third pin segment adjacent the fourth pin segment.
11. The intelligent power module according to any one of claims 1-10, wherein the plurality of power chips are spaced apart in a length direction of the substrate, and adjacent two of the power chips are staggered in a width direction of the substrate.
CN202311623130.6A 2023-11-29 2023-11-29 Intelligent power module Pending CN117558701A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202311623130.6A CN117558701A (en) 2023-11-29 2023-11-29 Intelligent power module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202311623130.6A CN117558701A (en) 2023-11-29 2023-11-29 Intelligent power module

Publications (1)

Publication Number Publication Date
CN117558701A true CN117558701A (en) 2024-02-13

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202311623130.6A Pending CN117558701A (en) 2023-11-29 2023-11-29 Intelligent power module

Country Status (1)

Country Link
CN (1) CN117558701A (en)

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