CN117542702A - Graphene RF NEMS switch - Google Patents
Graphene RF NEMS switch Download PDFInfo
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- CN117542702A CN117542702A CN202311425002.0A CN202311425002A CN117542702A CN 117542702 A CN117542702 A CN 117542702A CN 202311425002 A CN202311425002 A CN 202311425002A CN 117542702 A CN117542702 A CN 117542702A
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- graphene
- conductive film
- top electrode
- dielectric layer
- transmission line
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 97
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 97
- 101100460147 Sarcophaga bullata NEMS gene Proteins 0.000 title claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 230000005540 biological transmission Effects 0.000 claims abstract description 28
- 239000000463 material Substances 0.000 claims abstract description 15
- 238000002955 isolation Methods 0.000 claims abstract description 10
- 239000004020 conductor Substances 0.000 claims description 46
- 239000010410 layer Substances 0.000 claims description 44
- 239000002356 single layer Substances 0.000 claims description 8
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 7
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000003990 capacitor Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 238000000926 separation method Methods 0.000 claims description 3
- 238000003780 insertion Methods 0.000 abstract description 7
- 230000037431 insertion Effects 0.000 abstract description 7
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- 238000012545 processing Methods 0.000 abstract description 4
- 230000004044 response Effects 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 2
- 230000008569 process Effects 0.000 abstract description 2
- 239000000725 suspension Substances 0.000 abstract description 2
- 238000012986 modification Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 5
- 238000004891 communication Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Waveguide Switches, Polarizers, And Phase Shifters (AREA)
Abstract
The invention belongs to the technical field of electronic switches, and particularly relates to a graphene RF NEMS switch which comprises a substrate, a microwave transmission line, a dielectric layer and a suspended top electrode graphene conductive film, wherein the microwave transmission line is distributed above the substrate, the dielectric layer and the suspended top electrode graphene conductive film are fixed above the microwave transmission line, and the top electrode graphene conductive film is vertically suspended above the dielectric layer. The suspension beam is made of an elastic two-dimensional thin-layer graphene material, replaces a traditional metal beam material, and has the advantages of small size, light weight, low cost, low driving voltage, quick response time, less resistance loss, excellent RF performance and smaller occupied space in a circuit. The invention can realize low insertion loss and high isolation at high frequency, and can avoid the problem of fracture deformation caused by the rise of driving voltage in the processing process and has remarkable effect of reducing the driving voltage of a switch as a dielectric layer.
Description
Technical Field
The invention belongs to the technical field of electronic switches, and particularly relates to a graphene RF NEMS switch.
Background
In wireless communications, radio Frequency (RF) applications have significantly increased the need for high performance miniaturized devices. RF microelectromechanical (MEMS) switches are preferred over solid state switches because of their higher high frequency performance and high linearity. In addition, MEMS switches based on electrostatic actuation mechanisms consume almost zero dc power, are low cost, and provide high isolation and zero insertion loss, making them suitable for a variety of applications from mobile communications to advanced radar systems. However, metal beam based RF MEMS switches, while exhibiting good high frequency performance, have poor static friction and mechanical stability at high frequencies and drive voltages higher than the operating voltages of current integrated circuit technology.
Disclosure of Invention
Aiming at the technical problems that the RF MEMS of the metal beam is poor in static friction and mechanical stability at high frequency and the driving voltage is higher than the working voltage of the current integrated circuit technology, the invention provides a graphene RF NEMS switch, which realizes small size, light weight, low cost, low driving voltage (0.41V), quick response time, less resistance loss, excellent RF performance and smaller occupied space in a circuit.
In order to solve the technical problems, the invention adopts the following technical scheme:
the graphene RF NEMS switch comprises a substrate, a microwave transmission line, a dielectric layer and a suspended top electrode graphene conductive film, wherein the microwave transmission line is distributed above the substrate, the dielectric layer and the suspended top electrode graphene conductive film are fixed above the microwave transmission line, and the top electrode graphene conductive film is vertically suspended above the dielectric layer.
The microwave transmission line comprises a central conductor signal line and a grounding conductor ground wire, wherein a dielectric layer is fixed on the central conductor signal line, the central conductor signal line is used as a driving electrode, and the dielectric layer is used for conducting direct current isolation between the switch and the central conductor signal line of the microwave transmission line.
The two grounding conductor ground wires are arranged on two sides of the central conductor signal wire, and two ends of the top electrode graphene conductive film are respectively fixed on the two grounding conductor ground wires.
The substrate adopts a high-resistance silicon substrate, a glass substrate, a ceramic substrate or a gallium arsenide substrate.
The dielectric layer is of a thin square structure, and the material of the dielectric layer adopts hafnium dioxide HfO 2 Or graphene oxide GO, the hafnium oxide HfO 2 The dielectric constant of the graphene oxide GO is 25, and the dielectric constant of the graphene oxide GO is 200.
The microwave transmission line adopts a coplanar waveguide or a microstrip line, the material of the microwave transmission line adopts a gold conductor, and the conductivity of the microwave transmission line is 4.56 multiplied by 10 7 S/m。
The suspended top electrode graphene conductive film is a suspended beam, and is located at a height of 0.02 mu m from the central conductor signal line, and the suspended top electrode graphene conductive film and the dielectric layer form a contact state and a separation state.
When the suspended top electrode graphene conductive film is in a downward state, the dielectric layer is in contact with the suspended top electrode graphene conductive film to form a capacitor structure.
The suspended top electrode graphene conductive film is of a rectangular structure, and the suspended top electrode graphene conductive film is made of single-layer graphene or multi-layer graphene.
The substrate has a size of 2×2×1 μm, the central conductor signal line has a size of 0.5×2×0.02 μm, the ground conductor ground line has a size of 0.5×2×0.05 μm, the dielectric layer has a size of 0.5×0.5×0.001 μm, and the suspended top electrode graphene conductive film has a size of 1×0.5×0.00034 μm.
Compared with the prior art, the invention has the beneficial effects that:
the suspension beam of the graphene RF NEMS switch provided by the invention is an elastic two-dimensional thin graphene material, replaces the traditional metal beam material, and realizes small size (2 multiplied by 1.05 mu m), light weight, low cost, low driving voltage (0.41V), quick response time (5.42 ps), less resistance loss, excellent RF performance and smaller occupied space in a circuit.
The graphene RF NEMS switch provided by the invention uses a thin dielectric layer on a central conductor or has high dielectric strengthDielectric hafnium oxide (HfO) 2 ) And Graphene Oxide (GO) materials. Low insertion loss and high isolation can be achieved at high frequencies, and as a dielectric layer, the problem of fracture deformation due to an increase in driving voltage during processing can be avoided and significant effects on lowering the driving voltage of the switch can be achieved.
The graphene RF NEMS switch provided by the invention can realize the OFF state and the ON state by applying different voltages at the bottom driving electrode.
The graphene RF NEMS switch provided by the invention has excellent RF performance on the whole microwave band for single-layer and multi-layer graphene beams, and the insertion loss and isolation change in two states are almost always, so that the production challenges can be remarkably reduced in the actual processing process. While at the same time. Also has very low pull-in voltage and high switching speed for single layer graphene.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below. It will be apparent to those skilled in the art from this disclosure that the drawings described below are merely exemplary and that other embodiments may be derived from the drawings provided without undue effort.
The structures, proportions, sizes, etc. shown in the present specification are shown only for the purposes of illustration and description, and are not intended to limit the scope of the invention, which is defined by the claims, so that any structural modifications, changes in proportions, or adjustments of sizes, which do not affect the efficacy or the achievement of the present invention, should fall within the scope of the invention.
Fig. 1 is a three-dimensional schematic diagram of a graphene RF NEMS switch according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a graphene RF NEMS switch in an ON state when a driving voltage of the graphene RF NEMS switch is 0V according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of the graphene RF NEMS switch according to the embodiment of the present invention in an "OFF" state when the driving voltage is 0.41V;
fig. 4 is a top view of a graphene RF NEMS switch of an embodiment of the present invention;
FIG. 5 is a schematic diagram of insertion loss at 0.41V for single-layer and multi-layer graphene RF NEMS switch drive voltages according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of isolation at a driving voltage of 0.41V for single-layer and multi-layer graphene RF NEMS switches according to an embodiment of the present invention;
wherein: 1 is a substrate, 2 is a microwave transmission line, 201 is a central conductor signal line, 202 is a ground conductor ground line, 3 is a dielectric layer, and 4 is a suspended top electrode graphene conductive film.
Detailed Description
For the purposes of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions in the embodiments of the present invention will be clearly and completely described below, and it is apparent that the described embodiments are only some embodiments of the present application, but not all embodiments, and these descriptions are only for further illustrating the features and advantages of the present invention, not limiting the claims of the present invention; all other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are within the scope of the present disclosure.
The following describes in further detail the embodiments of the present invention with reference to the drawings and examples. The following examples are illustrative of the invention and are not intended to limit the scope of the invention.
In the description of the present application, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art in a specific context.
In this embodiment, as shown in fig. 1, the graphene RF NEMS switch is composed of a substrate 1, a microwave transmission line 2, a dielectric layer 3, and a suspended top electrode graphene conductive film 4. Wherein the microwave transmission line 2 is composed of a central conductor signal line 201 and two side grounding conductor ground lines 202, and the thickness is T respectively 1 ，T 2 ，T 3 ，T 4 ，T 5 . A microwave transmission line 2 is distributed above the substrate 1, the microwave transmission line 2 is a coplanar waveguide CPW or a microstrip line, and a dielectric layer 3 and a suspended top electrode graphene conductive film 4 are fixed above the microwave transmission line 2. A dielectric layer 3 with a thin square structure is fixed on the central conductor signal line 201, the central conductor signal line 201 serves as a driving electrode, and the dielectric layer 3 is used for performing direct current isolation on the switch and the central conductor signal line 201 of the microwave transmission line. A suspended top electrode graphene conductive film 4 is vertically suspended above the dielectric layer 3, the suspended top electrode graphene conductive film 4 is of a rectangular structure, the suspended top electrode graphene conductive film 4 is regarded as a suspended beam in the switch, the two sides of the suspended top electrode graphene conductive film are fixed on the grounding conductor ground wire 202, and the suspended top electrode graphene conductive film 4 and the dielectric layer 3 at the bottom form a contact state and a separation state.
As shown in fig. 2 and 3, the graphene RF NEMS switch achieves an "OFF", "ON" state when different voltages are applied at the bottom drive electrode. The working principle is as follows:
as shown in fig. 2, when the voltage applied at the center conductor signal line 201 is 0V, the suspended top electrode graphene conductive film 4 remains in an unbraked state, does not make contact with the bottom dielectric layer, has a very small rising state capacitance, and at this time, the switch is in an "ON" state and the signal propagates along the center conductor signal line 3 with zero loss. Since the facing area between the suspended top electrode graphene conductive film 4 and the central conductor signal line 201 is adjustable, the introduced capacitance to ground is adjustable, so that the capacitance to ground in the "ON" state can be independently adjusted according to the use requirement.
As shown in fig. 3, when the driving voltage applied at the center conductor signal line 201 is 0.41V, the suspended top electrode graphene conductive film 4 is pulled toward the lower center conductor signal line 201 by the driving force, and the air gap between the suspended top electrode graphene conductive film 4 and the center conductor signal line 201 becomes zero, at which time the dielectric layer 3 is in contact with the suspended top electrode graphene conductive film 4, thereby forming a capacitor structure. The switch is in the "OFF" state at this point due to signal-to-ground coupling reflections. The capacitance value of the OFF state can also be independently adjusted according to the requirements.
As shown in fig. 4, the size parameters of the graphene RF NEMS switch can be selected as follows: the substrate 1 is a high-resistance silicon substrate; or, alternatively, a glass substrate; or a ceramic substrate; or is a GaAs substrate, the cell structure has dimensions P×L×T 1 Is 2X 1 μm. The microwave transmission line 2 is a coplanar waveguide (CPW), or a microstrip line, and is made of gold conductor with conductivity of 4.56×10 7 S/m. The dimensions p×w×t of the center conductor signal line 3 3 The size of the ground conductor ground line 202 is PxMxT, 0.5x2 x 0.02 μm 2 The width S between the central conductor signal line 201 and the ground conductor ground line 202 is 0.25 μm, the dielectric layer 4 is of a thin square structure, and the material is hafnium dioxide (HfO) 2 ) A dielectric constant of 25; or Graphene Oxide (GO) with dielectric constant of about 200, and unit structure size W×W×T 4 0.5X0.5X0.001 μm. The suspended top electrode graphene conductive film 4 is considered as a suspended beam, which is located g from the central conductor signal line 201 0 At a height of=0.02 μm.
In this embodiment, the use of a thin dielectric layer or a dielectric with a high dielectric constant on the center conductor is considered to achieve a high capacitance ratio of the switch, as a high capacitance ratio can achieve low insertion loss and high isolation. The graphene RF NEMS switch selects hafnium oxide (HfO 2 ) As a material of the dielectric layer, impurity scattering in the top electrode graphene can be reduced, and a higher dielectric constant and low loss tangent angle (tanγ=0.0098), resulting in better switching performance at high frequencies; graphene Oxide (GO) is selected as the material of the dielectric layer, and can be avoided in the dielectric layer due to the fact that GO has lower elastic modulus and is more flexibleThe problem of fracture deformation caused by the rise of the driving voltage during processing has remarkable effect for lowering the driving voltage of the switch.
As shown in fig. 5, the S parameter of the graphene RF NEMS switch driving voltage at 0.41V, which is the S parameter of the switch when the top electrode is maintained in the unbraked state, was calculated in the frequency range of 1-140 GHz. Wherein the insertion loss of the single-layer graphene and the multi-layer graphene is 0.0032-0.0153dB and 0.003-0.0151dB respectively.
As shown in fig. 6, S parameter at the graphene RF NEMS switch driving voltage of 0.41V, which is the S parameter at the state where the top electrode and the bottom driving electrode of the switch are in contact, was calculated in the frequency range of 1-140 GHz. The isolation of the single-layer graphene and the multi-layer graphene is greater than 37.25dB and greater than 37.25dB respectively.
It can be seen that the graphene RF NEMS switch provided by the present invention achieves small size (2×2×1.05 μm), light weight, low cost, low driving voltage (0.41V), fast response time (5.42 ps), less resistive loss, excellent RF performance and smaller occupation space for use in a circuit, which makes the graphene RF NEMS switch suitable for various applications from L-band to F-band, such as data storage, communication applications, sensors, military applications, and the like.
While the invention has been described in conjunction with specific features and embodiments thereof, it will be evident that various modifications and combinations may be made thereto. For example, the material of the substrate 1 described above may be a glass substrate, a ceramic substrate, or a gallium arsenide substrate in addition to a high-resistance silicon substrate; the material of the dielectric layer 3 may also be a material selected from the group consisting of hafnium oxide (HfO 2 ) And Graphene Oxide (GO). Accordingly, the specification and drawings are merely exemplary illustrations of the present invention as defined in the appended claims and are considered to cover any and all modifications, variations, combinations, or equivalents that fall within the scope of the invention. It will be apparent to those skilled in the art that various modifications and variations can be made to the present invention without departing from the scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims and the equivalents thereof, the present invention is also intended to includeThese modifications and variations are included.
Claims (10)
1. A graphene RF NEMS switch, characterized by: the microwave transmission line comprises a substrate (1), a microwave transmission line (2), a dielectric layer (3) and a suspended top electrode graphene conductive film (4), wherein the microwave transmission line (2) is distributed above the substrate (1), the dielectric layer (3) and the suspended top electrode graphene conductive film (4) are fixed above the microwave transmission line (2), and the top electrode graphene conductive film (4) is vertically suspended above the dielectric layer (3).
2. The graphene RF NEMS switch of claim 1, wherein: the microwave transmission line (2) comprises a central conductor signal line (201) and a grounding conductor ground wire (202), a dielectric layer (3) is fixed on the central conductor signal line (201), the central conductor signal line (201) is used as a driving electrode, and the dielectric layer (3) is used for conducting direct current isolation between a switch and the central conductor signal line (201) of the microwave transmission line.
3. The graphene RF NEMS switch of claim 2, wherein: the two grounding conductor ground wires (202) are arranged on two sides of the central conductor signal wire (201), and two ends of the top electrode graphene conductive film (4) are respectively fixed on the two grounding conductor ground wires (202).
4. The graphene RF NEMS switch of claim 1, wherein: the substrate (1) is a high-resistance silicon substrate, a glass substrate, a ceramic substrate or a gallium arsenide substrate.
5. The graphene RF NEMS switch of claim 1, wherein: the dielectric layer (3) is of a thin square structure, and the material of the dielectric layer (3) adopts hafnium oxide HfO 2 Or graphene oxide GO, the hafnium oxide HfO 2 The dielectric constant of the graphene oxide GO is 25, and the dielectric constant of the graphene oxide GO is 200.
6. The graphene RF NEMS switch of claim 1, wherein: the microwave transmission line (2) adopts a coplanar waveguide or a microstrip line, the material of the microwave transmission line (2) adopts a gold conductor, and the conductivity of the microwave transmission line (2) is 4.56 multiplied by 10 7 S/m。
7. The graphene RF NEMS switch of claim 2, wherein: the suspended top electrode graphene conductive film (4) is a suspended beam, the suspended top electrode graphene conductive film (4) is located at a height of 0.02 mu m from the central conductor signal line (201), and the suspended top electrode graphene conductive film (4) and the dielectric layer (3) form a contact state and a separation state.
8. The graphene RF NEMS switch of claim 1, wherein: when the suspended top electrode graphene conductive film (4) is in a downward state, the dielectric layer (3) is in contact with the suspended top electrode graphene conductive film (4) to form a capacitor structure.
9. The graphene RF NEMS switch of claim 1, wherein: the suspended top electrode graphene conductive film (4) is of a rectangular structure, and the suspended top electrode graphene conductive film (4) is made of single-layer graphene or multi-layer graphene.
10. The graphene RF NEMS switch of claim 2, wherein: the substrate (1) has a size of 2×2×1 μm, the central conductor signal line (201) has a size of 0.5×2×0.02 μm, the ground conductor ground line (202) has a size of 0.5×2×0.05 μm, the dielectric layer (3) has a size of 0.5×0.5×0.001 μm, and the suspended top electrode graphene conductive film (4) has a size of 1×0.5×0.00034 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311425002.0A CN117542702A (en) | 2023-10-30 | 2023-10-30 | Graphene RF NEMS switch |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311425002.0A CN117542702A (en) | 2023-10-30 | 2023-10-30 | Graphene RF NEMS switch |
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| Publication Number | Publication Date |
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| CN117542702A true CN117542702A (en) | 2024-02-09 |
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| CN202311425002.0A Pending CN117542702A (en) | 2023-10-30 | 2023-10-30 | Graphene RF NEMS switch |
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| CN (1) | CN117542702A (en) |
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- 2023-10-30 CN CN202311425002.0A patent/CN117542702A/en active Pending
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