CN117542091A - Optical fingerprint sensing device - Google Patents
Optical fingerprint sensing device Download PDFInfo
- Publication number
- CN117542091A CN117542091A CN202210924808.3A CN202210924808A CN117542091A CN 117542091 A CN117542091 A CN 117542091A CN 202210924808 A CN202210924808 A CN 202210924808A CN 117542091 A CN117542091 A CN 117542091A
- Authority
- CN
- China
- Prior art keywords
- layer
- structure layer
- optical fingerprint
- sensing device
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 41
- 239000002184 metal Substances 0.000 claims abstract description 66
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 239000010409 thin film Substances 0.000 claims description 21
- 238000005538 encapsulation Methods 0.000 claims description 13
- 229920002120 photoresistant polymer Polymers 0.000 claims description 12
- 239000011159 matrix material Substances 0.000 claims description 7
- 238000001914 filtration Methods 0.000 claims description 4
- 238000004806 packaging method and process Methods 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 14
- 230000000694 effects Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000002159 nanocrystal Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1324—Sensors therefor by using geometrical optics, e.g. using prisms
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Human Computer Interaction (AREA)
- General Physics & Mathematics (AREA)
- Multimedia (AREA)
- Theoretical Computer Science (AREA)
- Image Input (AREA)
- Measurement Of The Respiration, Hearing Ability, Form, And Blood Characteristics Of Living Organisms (AREA)
Abstract
An optical fingerprint sensing device comprises a TFT structure layer, an OLED structure layer and a metal shading structure layer. The TFT structure layer is provided with a fingerprint sensor formed on a substrate, the fingerprint sensor comprises a bottom grid, a top grid, a first electrode and a second electrode, wherein a lower opening is defined between the top grid and the second electrode; the OLED structure layer is arranged on the TFT structure layer and comprises an OLED; the metal shading structure layer is provided with a plurality of metal wires positioned on the upper layer and the lower layer, wherein two adjacent metal wires in the plurality of metal wires are spaced by a distance to define an upper open hole, and the upper open hole is aligned with the lower open hole.
Description
Technical Field
The present invention relates to fingerprint sensing technology, and more particularly to an optical fingerprint sensing device integrated in an Organic Light Emitting Diode (OLED) panel.
Background
Fingerprint recognition is currently the most widely used biometric technology, and has been widely applied to electronic consumer products such as mobile phones as personal identification. The fingerprint sensor for fingerprint identification is independent and separated from the display device. The fingerprint sensor 15 is usually disposed on the back of the mobile phone, below the display screen 11 as shown in fig. 1, or below the display screen 11 as shown in fig. 2. The screen ratio of the mobile phone is reduced when the mobile phone is arranged below the display screen 11, the product appearance is affected, and the thickness is increased when the mobile phone is arranged below the display screen 11. In addition, in view of cost, the detection area of the independent fingerprint sensor 15 is small, so that only one fingerprint can be detected at a time, and the position for detecting the fingerprint must be limited, which cannot meet the actual requirement.
Therefore, there is a need to provide an improved fingerprint sensing device to solve the above-mentioned problems.
Disclosure of Invention
The present invention is directed to an optical fingerprint sensor device, which integrates a fingerprint sensor into an organic light emitting diode panel by optimizing the stacking structure and design of the organic light emitting diode panel, and simultaneously provides a better collimation effect.
To achieve the above object, an optical fingerprint sensing device of the present invention comprises: a thin film transistor structure layer having at least one organic light emitting diode pixel circuit and at least one fingerprint sensor formed on a substrate, wherein a lower opening is defined in the fingerprint sensor; the organic light-emitting diode structure layer comprises at least one anode, at least one organic PN diode, a cathode and a thin film packaging layer which covers the cathode, wherein the at least one anode, the at least one organic PN diode and the cathode form at least one organic light-emitting diode; and a metal shading structure layer with a plurality of metal wires, wherein an upper opening is defined by the metal wires and is aligned with the lower opening.
The foregoing summary and the following detailed description are exemplary in nature and are intended to provide further explanation of the invention as well as additional objects and advantages of the invention as set forth in the following description and drawings.
Drawings
Fig. 1 shows a configuration of a conventional fingerprint sensor.
Fig. 2 shows another prior art fingerprint sensor configuration.
Fig. 3 shows a schematic diagram of a first embodiment of an optical fingerprint sensing device according to the present invention.
Fig. 4 shows a schematic diagram of a second embodiment of the optical fingerprint sensing device according to the present invention.
Fig. 5 shows a schematic diagram of a third embodiment of the optical fingerprint sensing device according to the present invention.
Fig. 6 shows a schematic diagram of a fourth embodiment of the optical fingerprint sensing device according to the present invention.
Fig. 7 shows a schematic diagram of a fifth embodiment of the optical fingerprint sensing device according to the present invention.
FIG. 8 is a schematic diagram showing an incident light path of the optical fingerprint sensor device of the present invention.
Symbol description:
fingerprint sensor 15 of display screen 11
Optical fingerprint sensor device 30
Thin film transistor structure layer 31
Organic light emitting diode structural layer 33
Metallic light shielding structure layer 35 filter structure layer 37
Organic light emitting diode pixel circuit 311
Fingerprint sensor 312 organic light emitting diode 331
First layer metal M1 of substrate 315
Second layer metal M2 third layer metal M3
Top gate TG electrodes E1, E2
Channel 316,317 bottom gate BG
Lower opening H1 and upper opening H2
Anode 335 of pixel defining layer 334
Cathode 337 of organic PN diode 336
Thin film encapsulation layer 338 metal lines 351,351-1,351-2
Black matrix BM shading line 371
Light-transmitting block 373 photo resist 375,375-G,375-B
Upper aperture 376 and lower aperture 3371
Incident light paths 81,82 of circular polarizer layer 38
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific examples described herein are for purposes of illustration only and are not intended to limit the scope of the present invention.
Fig. 3 shows a schematic diagram of a first embodiment of the optical fingerprint sensing device 30 according to the present invention, which is an Organic Light Emitting Diode (OLED) panel integrated with the optical fingerprint sensing device 30 according to the structure of the OLED panel, the optical fingerprint sensing device 30 includes a Thin Film Transistor (TFT) structure layer 31, an organic light emitting diode structure layer 33, a metal light shielding structure layer 35, and a light filtering structure layer 37, wherein the TFT structure layer 31 mainly functions as a pixel driver of the organic light emitting diode, the organic light emitting diode structure layer 33 is disposed on the TFT structure layer 31, the organic light emitting diode structure layer 33 mainly functions as a light emitting diode, the metal light shielding structure layer 35 is disposed on the organic light emitting diode structure layer 33, the metal light shielding structure layer 35 is also capable of providing a touch function for shielding scattered light, the light filtering structure layer 37 is disposed on the metal light shielding structure layer 35, and simultaneously has a function of shielding light of the organic light emitting diode between pixels, and the optical fingerprint sensing device 30 is integrated with the OLED panel for fingerprint sensing.
As shown in fig. 3, the tft structure layer 31 has at least one organic light emitting diode pixel circuit 311 and at least one fingerprint sensor 312, wherein a lower opening H1 is defined in the fingerprint sensor 312, the organic light emitting diode pixel circuit 311 can control the light emitting brightness of the organic light emitting diode 331 in the organic light emitting diode structure layer 33 according to the data transmitted by the driving IC (not shown), and the tft structure layer 31 further includes GOA circuits, multiplexing circuits, etc. disposed at the periphery of the display area of the organic light emitting diode panel for driving the scan lines (gate lines), the data lines (data lines), etc. of the organic light emitting diode panel.
The organic light emitting diode pixel circuit 311 and the fingerprint sensor 312 are fabricated by a semiconductor process on a substrate (substrate) 315 of the thin film transistor structure layer 31, wherein the first Metal layer M1, the second Metal layer M2 and the third Metal layer M3 are sequentially disposed from bottom to top according to a time sequence of the process, the fingerprint sensor 312 may be a silicon-based photodiode (Si-based photo diode), a silicon nano crystal (Si nano crystal) photo sensor device or a TFT photo sensor device, and since materials (e.g. Si, siOx, siNx, metal, etc.) and the process adopted by the photo sensor devices are similar to those of the organic light emitting diode pixel circuit 311 of the thin film transistor structure layer 31, the fingerprint sensor 312 may be fabricated while the organic light emitting diode pixel circuit 311 is fabricated.
Referring to fig. 3 again, the organic light emitting diode pixel circuit 311 includes a top gate TG formed on the first metal layer M1, and a first electrode E1 and a second electrode E2 formed on the third metal layer M3, wherein in the organic light emitting diode pixel circuit 311, the first electrode E1 and the second electrode E1 are respectively a source electrode and a drain electrode, or respectively a drain electrode and a source electrode, and the first electrode E1 and the second electrode E1 respectively extend and are electrically connected to a semiconductor channel 316, such as an LTPS channel, under the top gate TG, so as to form a pixel circuit structure.
The fingerprint sensor 312 includes a bottom gate BG formed on the first metal layer M1, a top gate TG formed on the second metal layer M2, and a first electrode E1 and a second electrode E2 formed on the third metal layer M3, wherein the first electrode E1 and the second electrode E2 are respectively a source and a drain or respectively a drain and a source, the first electrode E1 and the second electrode E2 respectively extend, are electrically connected to a semiconductor channel 317, such as IGZO channel, between the bottom gate BG and the bottom gate BG, so as to form a fingerprint sensor structure, wherein the first electrode E1 and the second electrode E2 are located at two sides of the bottom gate BG in a projection direction perpendicular to the substrate 315, and the top gate TG is located between the first electrode E1 and the second electrode E2, such that the bottom opening H1 is defined between the top gate TG and the second electrode E2, and the top gate TG is not equal to the top gate TG 1, and the bottom electrode E2 is controlled to have a proper width between the top opening H1 and the bottom gate TG, in an embodiment, such that the width between the top gate TG and the top electrode E2 is not equal to the top opening H1 and the bottom electrode E2 is defined between the top gate TG and the top electrode H1.
The organic light emitting diode structure layer 33 includes a pixel defining layer (Pixel Define Layer, PDL) 334, at least one Anode (Anode) 335, at least one organic PN diode 336, a cathode (cathode) 337 and a thin film encapsulation layer 338 to form at least one organic light emitting diode 331, the Anode 335 is disposed in a defined space of the pixel defining layer 334, the organic PN diode 336 is disposed on the Anode 335, the cathode 337 is disposed on the organic PN diode 336, the Anode 335 may be a metal layer which is opaque and has a reflective effect to reflect the light emitted from the organic PN diode 336 toward the direction of the filter structure layer 37, the cathode 337 has a certain transmittance, so that the light emitted from the organic PN diode 336 can penetrate through, wherein the Anode 335, the organic PN diode 336 and the cathode 337 in fig. 3 form an organic light emitting diode 331, and it is noted that, although only one organic light emitting diode 331 is shown in fig. 3, for example, a green organic light emitting diode is shown, the organic light emitting diode structure layer 33 may include a plurality of red organic light emitting diodes, a blue light emitting diode 338 and a blue light emitting diode 338 which are arranged in a regular pattern, and a full-color organic light emitting diode layer 338 is provided on the thin film encapsulation layer 33, and a full-thickness is generally larger than that of the organic light emitting diode structure layer 33 is provided.
The metal shielding structure layer 35 has a plurality of metal lines 351, and defines an upper opening H2 by the plurality of metal lines 351, and the upper opening H2 is aligned with the lower opening H1, in an embodiment, the metal shielding structure layer 35 has a plurality of metal lines 351 located at the upper layer and the lower layer, and has a thickness of about 2um, the metal lines 351-2 at the upper layer and the metal lines 351-1 at the lower layer extend along different directions (e.g. two mutually perpendicular directions), the metal shielding structure layer 35 can be multiplexed into a touch sensing layer, that is, the metal lines 351-2 at the upper layer and the metal lines 351-1 at the lower layer extend along two mutually perpendicular directions respectively to locate the coordinate positions of the touch sensing electrodes, but not limited thereto, wherein, in the projection direction perpendicular to the panel 315, two adjacent metal lines 351 are spaced apart by a distance to define the upper opening H2, and the upper opening H2 is aligned with the lower opening H1, and in fig. 3, the metal lines 351-1 at the lower layer define one of the upper opening 351-1 and the upper opening H2-2 are also defined by the invention. In other embodiments, the metal line 351 of one layer of the metal shielding structure layer 35 may be used as two touch sensing electrodes in mutually perpendicular directions, the metal line 351 of the other layer may be used as a bridge electrode (bridge), and two adjacent metal lines 351 of the layer that are used as the touch sensing electrodes may define the upper opening H2. Furthermore, the upper opening H2 is not limited to be defined by two adjacent metal lines 351, but may be defined by digging holes in the same metal line 351 or in a block formed by the metal lines 351.
The filter structure layer 37 includes a Black Matrix (BM) having a thickness of about 3um, the black matrix BM is formed by a plurality of light-shielding lines 371, the light-shielding lines 371 are formed by a black insulating material and are disposed along different directions (e.g. two mutually perpendicular directions) to form a plurality of light-transmitting blocks 373, each light-transmitting block 373 is disposed corresponding to an organic light-emitting diode 331, and the light-transmitting blocks 373 are filled with a photoresist 375 having the same wavelength band as the light emitted by the corresponding organic light-emitting diode 331, for example, when the organic light-emitting diode 331 is a green organic light-emitting diode, the photoresist filled into the organic light-emitting diode 331 is a green photoresist 375-G. The black matrix BM has a light shielding line 371 corresponding to the upper opening H2 and an upper hole 376 to further define the upper opening H2, so that the thicknesses of the aligned lower opening H1, upper opening H2 and upper hole 376, in combination with the thicknesses of the filter structure layer 37, the metal light shielding structure layer 35 and the organic light emitting diode structure layer 33, can provide a alignment structure for the fingerprint sensor 312 to effectively inhibit the lateral light from entering the fingerprint sensor 312, thereby achieving an excellent fingerprint sensing effect.
Fig. 4 is a schematic diagram of a second embodiment of the optical fingerprint sensor device according to the present invention, which is similar to the first embodiment, and the difference is that the cathode 337 of the organic light emitting diode structure layer 33 of the optical fingerprint sensor device according to the present embodiment is provided with a lower hole 3371 at the position corresponding to the fingerprint sensor 312, and the lower hole 3371 is aligned with the lower hole H1, for example, because the cathode 337 absorbs part of the light, the cathode 337 at the position corresponding to the fingerprint sensor 312 is removed, so that the incident light amount of the fingerprint sensor 312 can be increased, and the detected fingerprint signal can be further improved.
Fig. 5 shows a schematic diagram of a third embodiment of the optical fingerprint sensing device according to the present invention, which is similar to the first embodiment, and the difference is that the upper hole 376 of the filter structure layer 37 of the present invention is filled with a photoresist 375 of a specific color, such as blue photoresist 375-B or green photoresist 375-G, and the transmission wavelength of the blue photoresist 375-B or green photoresist 375-G falls in the blue or green light band, but the transmission rate of the red light and the infrared light is lower, and in a strong light environment such as strong outdoor sunlight, the ambient light is converted into the red light and the infrared light after penetrating the finger and then enters the fingerprint sensor 312, so that the background noise is large.
Fig. 6 is a schematic diagram of a fourth embodiment of the optical fingerprint sensor device according to the present invention, which is similar to the first embodiment, and differs in that the light-transmitting region 373 of the filter structure layer 37 of the present invention is not filled with the photoresist 375, but a circular polarizer (Circular polarizer) layer 38 is added to the filter structure layer 37 in order to reduce the image quality degradation caused by the reflection of ambient light. The circular polarizer layer 38 can change the polarization direction of the reflected light so that the incident light and the reflected light cancel each other, that is, the clockwise polarized light and the counterclockwise Zhong Pianzhen light cancel each other, and thus the display contrast reduction due to the reflected light can be suppressed.
Fig. 7 is a schematic diagram of a fifth embodiment of the optical fingerprint sensing device according to the present invention, which is similar to the first embodiment, wherein the optical fingerprint sensing device according to the present invention omits the optical filtering structure layer 37, so that the upper opening H2 is defined only by the metal shielding structure layer 35, and a circular polarizer layer 38 is added on the metal shielding structure layer 35 to reduce the degradation of display contrast caused by reflected light.
Fig. 8 shows an incident light path diagram of the optical fingerprint sensor device of the present invention for illustrating that materials with different refractive indexes are used to achieve the effect of reducing the incident light angle and further improving the collimation, wherein the incident light path 81 in fig. 8 is shown as a light path diagram when the refractive indexes of the layers of the tft structure layer 31, the oled structure layer 33, the metal shielding structure layer 35, the filter structure layer 37, and the circular polarizer layer 38 are the same, and the incident light path 82 is shown as a light path diagram when the refractive index of the thin film encapsulation layer 338 of the oled structure layer 33 is smaller than the refractive index of the metal shielding structure layer 35, the filter structure layer 37, and the circular polarizer layer 38 on the upper layer, and according to fig. 8, the offset of the incident light path 82 reaching the fingerprint sensor 312 is increased due to the change of the refractive index, and thus the incident light path 81 cannot pass through the lower opening H1, but the incident light path 81 can reach the fingerprint sensor 312 through the lower opening H1. That is, when the refractive index of the thin film encapsulation layer 338 is smaller than that of the upper layer, the incident light can reach the fingerprint sensor 312 through the lower opening H1, so that only the collimated incident light can reach the fingerprint sensor 312, and the collimating effect is further improved. It should be noted that, in fig. 8, the structure of the fourth embodiment of the optical fingerprint sensor device of fig. 6 is used to illustrate that the materials with different refractive indexes are used to improve the collimation efficiency, but in other embodiments of the present invention, the refractive index of the thin film encapsulation layer 338 may be made smaller than that of the upper layer to improve the collimation efficiency, that is, in the first, second and third embodiments, the refractive index of the thin film encapsulation layer 338 is smaller than or equal to that of the metal light shielding structure layer 35, or the refractive index of the thin film encapsulation layer 338 is smaller than or equal to that of the metal light shielding structure layer 35 and the filter structure layer 37, and in the fourth embodiment, the refractive index of the thin film encapsulation layer 338 is smaller than or equal to that of the metal light shielding structure layer 35 and the filter structure layer 38, or the refractive index of the thin film encapsulation layer 338 is smaller than or equal to that of the metal light shielding structure layer 35 and the filter structure layer 38, and the filter structure layer 38.
As can be seen from the above description, the optical fingerprint sensor device of the present invention integrates the fingerprint sensor into the organic light emitting diode panel by optimizing the stacking structure and design of the organic light emitting diode panel, and has the advantages of not increasing the product thickness, not reducing the screen occupation ratio, simultaneously detecting multiple fingerprints, and not limiting the detection position.
The above embodiments are merely illustrative, and the scope of the invention is defined by the claims and not limited to the above embodiments.
Claims (14)
1. An optical fingerprint sensing device, comprising:
a thin film transistor structure layer having at least one organic light emitting diode pixel circuit and at least one fingerprint sensor formed on a substrate, wherein a lower opening is defined in the fingerprint sensor;
the organic light-emitting diode structure layer comprises at least one anode, at least one organic PN diode and a cathode, and a thin film packaging layer covers the cathode, wherein the at least one anode, the at least one organic PN diode and the cathode form at least one organic light-emitting diode; and
the metal shading structure layer is provided with a plurality of metal wires, wherein an upper opening is defined by the metal wires, and the upper opening is aligned with the lower opening.
2. The optical fingerprint sensing device according to claim 1, further comprising: the light filtering structure layer is arranged on the metal shading structure layer and comprises a black matrix, and an upper hole is arranged at the position corresponding to the upper opening of the black matrix.
3. The optical fingerprint sensor device according to claim 2, wherein the black matrix has a plurality of transparent areas, each transparent area is disposed corresponding to an organic light emitting diode, and each transparent area is filled with a photoresist having the same wavelength band as the light emitted by the corresponding organic light emitting diode.
4. The optical fingerprint sensing device according to claim 3, wherein said cathode has a lower hole corresponding to said fingerprint sensor, said lower hole being aligned with said lower opening.
5. The optical fingerprint sensing device according to claim 3, wherein said upper hole is filled with blue or green photoresist.
6. The optical fingerprint sensing device according to claim 2, further comprising: a circular polarizer layer disposed on the filter structure layer.
7. The optical fingerprint sensing device according to claim 1, further comprising: a circular polarizer layer disposed on the metal shading structure layer.
8. The optical fingerprint sensing device according to claim 2, wherein the refractive index of said thin film encapsulation layer is less than or equal to the refractive index of said metal light shielding structure layer.
9. The optical fingerprint sensing device according to claim 6, wherein said thin film encapsulation layer has a refractive index less than or equal to a refractive index of said metal light shielding structure layer and said circular polarizer layer.
10. The optical fingerprint sensing device according to claim 7, wherein said thin film encapsulation layer has a refractive index less than or equal to a refractive index of said metal light shielding structure layer and said circular polarizer layer.
11. The optical fingerprint sensing device according to claim 1, wherein said metal shielding structure layer is a touch sensing layer.
12. The optical fingerprint sensor device according to claim 1, wherein the fingerprint sensor comprises a bottom gate, a top gate, a first electrode and a second electrode, wherein the first electrode and the second electrode are located on both sides of the bottom gate in a projection direction perpendicular to the substrate, and the top gate is located between the first electrode and the second electrode to define the lower opening between the top gate and the second electrode.
13. The optical fingerprint sensing device according to claim 12, wherein said top gate is not equidistant from said first electrode and said second electrode.
14. The optical fingerprint sensing device according to claim 1, wherein the plurality of metal lines are disposed in upper and lower layers, and adjacent metal lines of the plurality of metal lines are spaced apart by a distance to define the upper opening.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210924808.3A CN117542091A (en) | 2022-08-02 | 2022-08-02 | Optical fingerprint sensing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210924808.3A CN117542091A (en) | 2022-08-02 | 2022-08-02 | Optical fingerprint sensing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117542091A true CN117542091A (en) | 2024-02-09 |
Family
ID=89786737
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210924808.3A Pending CN117542091A (en) | 2022-08-02 | 2022-08-02 | Optical fingerprint sensing device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117542091A (en) |
-
2022
- 2022-08-02 CN CN202210924808.3A patent/CN117542091A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110709916B (en) | Display device | |
| US11538270B2 (en) | Display panel and display device | |
| US11594063B2 (en) | Display module including light-shielding layer, and display apparatus | |
| US11003886B2 (en) | Display apparatus including a fingerprint identification device | |
| CN110610990B (en) | Display screen, display device and mobile terminal | |
| WO2018145461A1 (en) | Display device | |
| CN110426891B (en) | Display panel and display device | |
| US10592722B2 (en) | Photosensitive unit, photosensitive module and display device | |
| CN110286514B (en) | Display panel and display device | |
| KR20190092661A (en) | display device | |
| CN211180467U (en) | Liquid crystal display device having a plurality of pixel electrodes | |
| US20220310701A1 (en) | Display device and touch controller | |
| US12062248B2 (en) | Display panel and display device | |
| CN114740994B (en) | Display screen and display device | |
| US11740503B2 (en) | Display screen and electronic device | |
| WO2021258957A1 (en) | Texture recognition apparatus and electronic apparatus | |
| US20210325735A1 (en) | Display device | |
| US20220336510A1 (en) | Line recognition module, fabricating method thereof and display device | |
| CN113224118A (en) | Grain identification display panel and display device | |
| US11573449B2 (en) | Display device | |
| CN117542091A (en) | Optical fingerprint sensing device | |
| TWI831316B (en) | Optical fingerprint sensor device | |
| KR102542872B1 (en) | Fingerprint sensing module and display device with a built-in optical image sensor | |
| CN111339962A (en) | Identification substrate, display panel, manufacturing method of display panel and display device | |
| CN115019353B (en) | Module integrating optical sensor, display panel and display device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |