CN1175306C - Structure for LCD of organic luminous material film transistor and making method thereof - Google Patents
Structure for LCD of organic luminous material film transistor and making method thereof Download PDFInfo
- Publication number
- CN1175306C CN1175306C CNB021243387A CN02124338A CN1175306C CN 1175306 C CN1175306 C CN 1175306C CN B021243387 A CNB021243387 A CN B021243387A CN 02124338 A CN02124338 A CN 02124338A CN 1175306 C CN1175306 C CN 1175306C
- Authority
- CN
- China
- Prior art keywords
- lcd
- film transistor
- layer
- white
- overlayer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The present invention relates to a structure for an LCD of organic luminous material film transistors and a fabrication method thereof. A glass substrate is provided, and a film transistor integrated circuit is fabricated on the glass substrate. A metallic layer is formed on the top surfaces of film transistors, and subsequently, a white light luminous organic material layer is deposited. Then, the surface of the organic material layer is flatened by a covering layer, and finally, a shading pattern layer and a color filter plate are formed to complete the assembly of a film transistor liquid crystal display. The present invention uses the film transistors as a driving circuit for controlling white light luminous organic materials or supplying voltage to the white light luminous organic materials, which can easily control bright spots of the liquid crystal display. The color filter plate is matched to be used as a color modulation tool, which can greatly simplify the structure and the fabrication method of the film transistor liquid crystal display. Thus, fabrication cost is reduced.
Description
Technical field
The present invention relates to Thin Film Transistor-LCD, particularly relevant for a kind of LCD of organic luminous material film transistor and manufacture method thereof.
Background technology
The illumination mode of existing Thin Film Transistor-LCD is divided into active luminous luminous with passive type, more early stage illumination mode is the passive type illumination mode, use a backlight as light emitting source in the behind of glass substrate, utilize the thin film transistor integrated circuit on glass substrate then, be controlled at the liquid crystal layer between glass substrate and the printing opacity electro-conductive glass, make that the liquid crystal layer can printing opacity or light tight, then, pass of the optical filtering action of the light of liquid crystal layer through color filter, make the light that is sent have three kinds of different colors of RGB, utilize signal processing mode again, bright spot through three kinds of different colours is carried out the color mixed light, to reach the purpose of colorful visualization.This passive type illumination mode need use backlight, and must adjust the aperture opening ratio of LCD, to obtain light intensity preferably.
Along with the continuous development of luminescent material, utilize luminescent material to be used as the light emitting source of Thin Film Transistor-LCD, become the trend of a development in science and technology.Among Thin Film Transistor-LCD, use the white-light emitting organic material as light emitting source, and use thin film transistor (TFT) as controlling white-light emitting organic material or service voltage driving circuit to the white-light emitting organic material, can control the bright spot of LCD easily, cooperate the instrument of color filter again, can significantly simplify Thin Film Transistor-LCD and manufacture method as color adjusting and changing.
Therefore, need a kind of Thin Film Transistor-LCD and manufacture method thereof, use the light emitting source of white-light emitting organic material as LCD, cooperate the assembling of shielding pattern layer and color filter, reach the purpose of colorful visualization, moreover, propose a kind of with the manufacture method of white-light emitting organic material as the light emitting source of LCD, assembling liquid crystal display effectively.
Summary of the invention
The purpose of this invention is to provide a kind of organic material film transistor liquid crystal display (TFT-LCD), utilize the light emitting source of white-light emitting organic material layer as LCD, directly on luminescent layer, form printing opacity electro-conductive glass patterned layer and shielding pattern layer, white light is imported color filter, reach the purpose of control color bright spot.
The invention provides a kind of organic material film transistor liquid crystal display (TFT-LCD), utilize the luminescent layer of white-light emitting organic material layer as LCD, on the white-light emitting organic material layer, form an overlayer, so that a flat surfaces to be provided, in the hope of on overlayer, directly forming printing opacity electro-conductive glass patterned layer, finish the assembling of whole LCD.
The invention provides a kind of organic material film transistor liquid crystal display (TFT-LCD), utilize the luminescent layer of white-light emitting organic material layer as LCD, on printing opacity electro-conductive glass patterned layer, form overlayer, on overlayer, directly form shielding pattern layer and color filter, finish colour liquid crystal display device.
The invention provides a kind of manufacture method of organic material film transistor liquid crystal display (TFT-LCD), on thin film transistor (TFT), directly cover metal level, on metal level and glass baseplate, directly deposit the white-light emitting organic material layer, as the luminous material layer of LCD, directly control the whether luminous of luminescent material with thin film transistor (TFT).
The invention provides a kind of manufacture method of organic material film transistor liquid crystal display (TFT-LCD), on the white-light emitting organic material layer, cover a smooth rete, on smooth rete, directly form printing opacity electro-conductive glass patterned layer, finish the assembling of LCD.
The invention provides a kind of manufacture method of organic material film transistor liquid crystal display (TFT-LCD), on printing opacity electro-conductive glass patterned layer, directly use overlayer to obtain a flat surfaces, on flat surfaces, directly make shielding pattern layer and color filter, finish the assembling of LCD.
For reaching above-mentioned purpose, concrete technical scheme of the present invention is: a kind of LCD of organic luminous material film transistor comprises at least: a glass baseplate; The plurality of films transistor is formed on the end face of this glass baseplate, as the control circuit of this LCD; One metal level covers the transistorized end face of this plurality of films; One white-light emitting organic material layer covers on this metal level and this glass baseplate; One overlayer is formed on this white-light emitting organic material layer, to form a smooth rete; One printing opacity electro-conductive glass patterned layer is formed on this overlayer, only is covered on this plurality of films transistor; One shielding pattern layer is formed on this overlayer, and is filled in the opening among this printing opacity conductive glass layer; And a color filter, be formed on this printing opacity electro-conductive glass patterned layer and this shielding pattern layer, carry out color adjusting and changing for the white light that is sent from this white-light emitting organic material layer.
Another technical scheme of the present invention is: a kind of LCD of organic luminous material film transistor comprises at least: a glass baseplate; The plurality of films transistor is formed on the end face of this glass baseplate, as the control circuit of this LCD; One metal level covers the transistorized end face of this plurality of films; One white-light emitting organic material layer covers on this metal level and this glass baseplate; One first overlayer is formed on this white-light emitting organic material layer, to form a smooth rete; One printing opacity electro-conductive glass patterned layer is formed on this first overlayer, only is covered on this plurality of films transistor; One second overlayer is formed on this printing opacity electro-conductive glass patterned layer and this first overlayer; One shielding pattern layer is formed on this second overlayer; And a color filter, be formed on this second overlayer and this shielding pattern layer, carry out color adjusting and changing for the white light that is sent from this white-light emitting organic material layer.
The present invention also proposes a kind of manufacture method of LCD of organic luminous material film transistor, and its step comprises at least: a glass baseplate is provided; Form the plurality of films transistor on this glass baseplate, as the control circuit of this LCD; Form metal level at the transistorized end face of this plurality of films; Deposit a white-light emitting organic material layer to this metal level and this glass baseplate; Form one first overlayer, cover on this white-light emitting organic material layer, to form a smooth surface; Define a printing opacity electro-conductive glass patterned layer, be formed on this first overlayer, wherein this printing opacity electro-conductive glass patterned layer only covers the transistorized top of this plurality of films; Form one second overlayer, cover on this printing opacity electro-conductive glass patterned layer and this first overlayer; Define a shielding pattern layer, be formed on this second overlayer; And form a color filter, on this second overlayer and this shielding pattern layer, carry out color adjusting and changing for the white light that is sent from this white-light emitting organic material layer.
The present invention uses thin film transistor (TFT) as controlling white-light emitting organic material or the service voltage driving circuit to the white-light emitting organic material, can control the bright spot of LCD easily, cooperate the instrument of color filter again, significantly simplify Thin Film Transistor-LCD and manufacture method as color adjusting and changing.Reduced cost of manufacture.
Description of drawings
Fig. 1 shows the present invention's LCD diagrammatic cross-section, forms thin film transistor integrated circuit on a glass substrate, and covers metal material on the top of thin-film transistor circuit;
Fig. 2 shows the present invention's LCD diagrammatic cross-section, covers organic white light-emitting diodes material on thin film transistor integrated circuit, and uses a rete that the white organic diode material is carried out the planarization processing procedure;
Fig. 3 shows the present invention's LCD diagrammatic cross-section, forms the printing opacity conductive glass layer on rete, and in alignment with thin film transistor integrated circuit;
Fig. 4 A shows the liquid crystal display device structure diagrammatic cross-section of the present invention's first specific embodiment, forms light-shielding pattern among the opening of conduction translucent glass layer, as the covering layer between the different color bright spot;
Fig. 4 B shows the liquid crystal display device structure diagrammatic cross-section of the present invention's first specific embodiment, order forms ruddiness filter, green glow filter and blue light filter on printing opacity conductive glass layer and light-shielding pattern, carries out color adjusting and changing for the light that is sent from the white organic light LED material;
Fig. 5 A shows the liquid crystal display device structure diagrammatic cross-section of the present invention's second specific embodiment, covers a smooth rete on the printing opacity conductive glass layer, and the printing opacity conductive glass layer is carried out planarization; And
Fig. 5 B shows the liquid crystal display device structure diagrammatic cross-section of the present invention's second specific embodiment, on smooth rete, form shielding pattern layer, as the barrier layer between the different color bright spot, order forms ruddiness filter, green glow filter and blue light filter then, carries out color adjusting and changing for the white light that is sent from the white organic light LED material.
The figure number explanation:
Thin film transistor (TFT) 110
Thin film transistor (TFT) 110
White-light emitting organic material layer 130
Printing opacity electro-conductive glass patterned layer 150
Embodiment
The present invention discloses a kind of LCD of organic luminous material film transistor that has: a glass baseplate, substrate as Thin Film Transistor-LCD, on glass baseplate, form thin film transistor integrated circuit, as the control circuit of LCD, then the end face at thin film transistor (TFT) forms metal level.Then, a white-light emitting organic material layer covers on metal level and the glass baseplate, as the light emitting source of LCD.One first overlayer covers on the white-light emitting organic material layer, to form a flat surfaces.One printing opacity electro-conductive glass patterned layer is defined in the first tectal surface, is positioned at the top of thin film transistor (TFT).One shielding pattern layer, be formed directly into the opening among the printing opacity electro-conductive glass patterned layer, or deposit one second overlayer earlier to the printing opacity electro-conductive glass patterned layer and first overlayer, on second overlayer, define shielding pattern layer then, be positioned on the opening of printing opacity electro-conductive glass patterned layer.At last, last, form color filter, the corresponding thin film transistor (TFT) of each color filter is to form a color bright spot.
The present invention discloses a kind of manufacture method with LCD of organic luminous material film transistor, one glass baseplate is provided, substrate as LCD, at the surface of glass baseplate definition thin film transistor integrated circuit, end face at thin film transistor (TFT) covers metal level, as the metallic conduction material layer, then, deposition white-light emitting organic material layer is to metal level and glass baseplate, as the light emitting source of LCD.Then, cover one first overlayer to the white-light emitting organic material layer, to form a flat surfaces.Then, define the tectal surface of a printing opacity electro-conductive glass patterned layer to the first, and correspond to the top of thin film transistor (TFT), then direct opening part in printing opacity electro-conductive glass patterned layer forms shielding pattern layer, perhaps deposit one second overlayer earlier, on printing opacity electro-conductive glass patterned layer, form a flat surfaces, form shielding pattern layer then.Among the present invention, the opening part of printing opacity electro-conductive glass patterned layer is directly inserted or covered in to the light-shielding pattern series of strata.Form color filter at last, color filter system is made up of ruddiness filter, green glow filter and blue light filter, and the corresponding thin film transistor (TFT) of each color filter is to state into the control of a color bright spot.
Below will cooperate Fig. 1 to Fig. 3, and Fig. 4 A and Fig. 4 B, illustrate that of the present invention first is concrete
Embodiment.
See also Fig. 1, one glass baseplate 100 is provided, substrate as Thin Film Transistor-LCD, then, surface at glass baseplate 100 forms plurality of films transistor 110, to form thin film transistor integrated circuit, as the control circuit of LCD, and plurality of films transistor 110 covers on the glass baseplate 100 for part.Wherein, the manufacture method of thin film transistor (TFT) 110 is to use general manufacture of semiconductor technology, is formed on the glass baseplate 100.
Please continue to consult Fig. 1, comprehensive conductive metal deposition material is to thin film transistor (TFT) 110 and glass baseplate 100, re-use little shadow and etching technique, the metal material of removal on glass baseplate 100, to form metal level 120, as the conductive metal layer of thin film transistor (TFT) 110, thin film transistor (TFT) 110 then is the white-light emitting organic material that applies voltages to LCD via metal level 120, reaches the luminous action of control white-light emitting organic material.
See also Fig. 2, form white-light emitting organic material layer 130 to metal level 120 and glass baseplate 100, luminescent material as LCD, the composition material of this white-light emitting organic material layer 130 is the white light emitting diode organic material, thin film transistor (TFT) 110 can send white light when applying a voltage on this kind material, as the light emitting source of LCD.After deposition white-light emitting organic material layer 130, deposit first overlayer 140 to white-light emitting organic material layer 130, to form a flat surfaces.The preferred embodiment one of according to the present invention, the composition material of first overlayer 140 is polyimide (Polyimide) material, polyacrylate (Acrylize) material or transparent photoresist, can reach the purpose of planarization.Another preferred embodiment according to the present invention, the composition material of first overlayer 140 is a silicon nitride material, in silicon nitride materials to white-light emitting organic material layer 130, use the cmp processing procedure, silicon nitride material is carried out the planarization processing procedure, to obtain a smooth surface, to be beneficial to carrying out follow-up processing procedure.
See also Fig. 3, the end face of deposition printing opacity conducting glass material to the first overlayer 140, then use little shadow and etch process, remove the not printing opacity conducting glass material on thin film transistor (TFT) 110, to form printing opacity electro-conductive glass patterned layer 150, this printing opacity electro-conductive glass patterned layer 150 is in alignment with thin film transistor (TFT) 110, when thin film transistor (TFT) 110 applied voltages to white-light emitting conductive material layer 140 via metal level 120, white light will be via 150 outgoing of printing opacity electro-conductive glass patterned layer to color filter simultaneously.Among the present invention, printing opacity electro-conductive glass patterned layer 150 can connect another electrode of white-light emitting organic material layer 140, connects with the circuit of finishing white-light emitting organic material layer 140.
See also Fig. 4 A, on deposition light screening material to the first overlayer 140 and the printing opacity electro-conductive glass patterned layer 150, then use little shadow and etching technique, the light screening material of removal on printing opacity electro-conductive glass patterned layer 150, to form shielding pattern layer 160, this shielding pattern layer 160 is filled in the opening among the printing opacity electro-conductive glass patterned layer 150, to define the bright spot position of LCD, avoids the mixed light between the different color bright spot.
See also Fig. 4 B, form color filter 170 to shielding pattern layer 160 and printing opacity electro-conductive glass patterned layer 150, when white-light emitting organic material layer 130 sends white light via printing opacity electro-conductive glass patterned layer 150 during to color filter 170, white light conversion is become red bluish-green three kinds of primitive color lights, carry out the modulation of intensity size then, reach the purpose of colorful visualization.Wherein, color filter 170 by ruddiness filter, green glow filter and blue light filter series arrangement on shielding pattern layer 160 and printing opacity electro-conductive glass patterned layer 150, each thin film transistor (TFT) 110 corresponding color filter (for example ruddiness filter, green glow filter or blue light filter) is shown in Fig. 4 B.
Second specific embodiment of the present invention below will be described, and referring to figs. 1 through Fig. 3, and Fig. 5 A and Fig. 5 B.
See also Fig. 1 to Fig. 3, explanation forms thin film transistor (TFT) 110 on glass substrate 110, form metal level 120 on the top of thin film transistor (TFT) 110 then, then deposit the white-light emitting organic material layer 130 and first overlayer 140, at last in the surface of first overlayer 140 definition printing opacity electro-conductive glass patterned layer 150, second specific embodiment is from the fabrication steps of Fig. 1 to Fig. 3, and is identical with first specific embodiment, no longer is described in detail.
See also Fig. 5 A, after definition printing opacity electro-conductive glass patterned layer 150, deposit one second overlayer 155 to the printing opacity electro-conductive glass patterned layer 150 and first overlayer 140, to form the surface of a planarization.In a preferred embodiment of the present invention, the composition material of second overlayer 155 is polyimide (Polyimide) material, polyacrylate (Acrylize) material or transparent photoresist.Another preferred embodiment of the present invention, the composition material of second overlayer 155 is a silicon nitride material, after silicon nitride materials, use the cmp processing procedure that silicon nitride material is carried out planarization, to obtain a flat surfaces, be beneficial to the carrying out of successive process action.
See also Fig. 5 B, on deposition light screening material to the second overlayer 155, use little shadow and etch process, the etching light screening material, on second overlayer 155, form shielding pattern layer 160, wherein shielding pattern layer 160 is to be positioned on the opening of printing opacity electro-conductive glass patterned layer 150, can not block from the white light of 150 outgoing of printing opacity electro-conductive glass patterned layer.After definition shielding pattern layer 160, form color filter 170 on the shielding pattern layer 160 and second overlayer 155, wherein color filter 170 is by ruddiness filter, green glow filter and the blue light filter series arrangement on second overlayer 155, and each thin film transistor (TFT) 110 is aimed at a color filter (ruddiness filter, green glow filter or blue light filter), makes each thin film transistor (TFT) 110 form a color bright spot.
The present invention with preferred embodiment explanation as above; only be used to use the enforcement that helps to understand the present invention; non-in order to limit the present invention's spirit; and be familiar with this field skill person after comprehension the present invention's spirit; in not breaking away from the present invention's spiritual scope; when variations that can do a little change retouching and be equal to replaced, its scope of patent protection ought on claims scope and etc. same domain decide.
Claims (25)
1. LCD of organic luminous material film transistor is characterized in that: comprise at least:
One glass baseplate;
The plurality of films transistor is formed on the end face of this glass baseplate, as the control circuit of this LCD;
One metal level covers the transistorized end face of this plurality of films;
One white-light emitting organic material layer covers on this metal level and this glass baseplate;
One overlayer is formed on this white-light emitting organic material layer, to form a smooth rete;
One printing opacity electro-conductive glass patterned layer is formed on this overlayer, only is covered on this plurality of films transistor;
One shielding pattern layer is formed on this overlayer, and is filled in the opening among this printing opacity conductive glass layer; And
One color filter is formed on this printing opacity electro-conductive glass patterned layer and this shielding pattern layer, carries out color adjusting and changing for the white light that is sent from this white-light emitting organic material layer.
2. LCD of organic luminous material film transistor as claimed in claim 1 is characterized in that: the composition material of this metal level comprises conductive metallic material.
3. LCD of organic luminous material film transistor as claimed in claim 1 is characterized in that: this white-light emitting organic material comprises the white light emitting diode organic material.
4. LCD of organic luminous material film transistor as claimed in claim 1 is characterized in that: this tectal composition material is selected from one of them of polyimide material, polyacrylate material and group that transparent photoresist is formed.
5. LCD of organic luminous material film transistor as claimed in claim 1 is characterized in that: this tectal composition material comprises silicon nitride material, and uses the cmp processing procedure that planarization is carried out on this tectal surface.
6. LCD of organic luminous material film transistor as claimed in claim 1 is characterized in that: the composition material of this printing opacity conductive glass layer comprises the tin indium oxide material.
7. LCD of organic luminous material film transistor as claimed in claim 1 is characterized in that: this color filter comprises red filter, green filter and blue filter.
8. LCD of organic luminous material film transistor is characterized in that: comprise at least:
One glass baseplate;
The plurality of films transistor is formed on the end face of this glass baseplate, as the control circuit of this LCD;
One metal level covers the transistorized end face of this plurality of films;
One white-light emitting organic material layer covers on this metal level and this glass baseplate;
One first overlayer is formed on this white-light emitting organic material layer, to form a smooth rete;
One printing opacity electro-conductive glass patterned layer is formed on this first overlayer, only is covered on this plurality of films transistor;
One second overlayer is formed on this printing opacity electro-conductive glass patterned layer and this first overlayer;
One shielding pattern layer is formed on this second overlayer; And
One color filter is formed on this second overlayer and this shielding pattern layer, carries out color adjusting and changing for the white light that is sent from this white-light emitting organic material layer.
9. LCD of organic luminous material film transistor as claimed in claim 8 is characterized in that: the composition material of this metal level comprises conductive metallic material.
10. LCD of organic luminous material film transistor as claimed in claim 8 is characterized in that: this white-light emitting organic material comprises the white light emitting diode organic material.
11. LCD of organic luminous material film transistor as claimed in claim 8 is characterized in that: this first tectal composition material is selected from one of them of polyimide material, polyacrylate material and group that transparent photoresist is formed.
12. LCD of organic luminous material film transistor as claimed in claim 8 is characterized in that: this first tectal composition material comprises silicon nitride material, and uses the cmp processing procedure that planarization is carried out on this tectal surface.
13. LCD of organic luminous material film transistor as claimed in claim 8 is characterized in that: the composition material of this printing opacity conductive glass layer comprises the tin indium oxide material.
14. LCD of organic luminous material film transistor as claimed in claim 8 is characterized in that: this second tectal composition material is selected from one of them of polyimide material, polyacrylate material and group that transparent photoresist is formed.
15. LCD of organic luminous material film transistor as claimed in claim 8 is characterized in that: this second tectal composition material comprises silicon nitride material, and uses the cmp processing procedure that planarization is carried out on this tectal surface.
16. LCD of organic luminous material film transistor as claimed in claim 8 is characterized in that: this color filter comprises red filter, green filter and blue filter.
17. the manufacture method of a LCD of organic luminous material film transistor is characterized in that: comprise at least:
One glass baseplate is provided;
Form the plurality of films transistor on this glass baseplate, as the control circuit of this LCD;
Form metal level at the transistorized end face of this plurality of films;
Deposit a white-light emitting organic material layer to this metal level and this glass baseplate;
Form one first overlayer, cover on this white-light emitting organic material layer, to form a smooth surface;
Define a printing opacity electro-conductive glass patterned layer, be formed on this first overlayer, wherein this printing opacity electro-conductive glass patterned layer only covers the transistorized top of this plurality of films;
Form one second overlayer, cover on this printing opacity electro-conductive glass patterned layer and this first overlayer;
Define a shielding pattern layer, be formed on this second overlayer; And
Form a color filter, on this second overlayer and this shielding pattern layer, carry out color adjusting and changing for the white light that is sent from this white-light emitting organic material layer.
18. the manufacture method of LCD of organic luminous material film transistor as claimed in claim 17 is characterized in that: the composition material of this metal level comprises conductive metallic material.
19. the manufacture method of LCD of organic luminous material film transistor as claimed in claim 17 is characterized in that: this white-light emitting organic material comprises the white light emitting diode organic material.
20. the manufacture method of LCD of organic luminous material film transistor as claimed in claim 17 is characterized in that: this first tectal composition material is selected from one of them of polyimide material, polyacrylate material and group that transparent photoresist is formed.
21. the manufacture method of LCD of organic luminous material film transistor as claimed in claim 17, it is characterized in that: this first tectal composition material comprises silicon nitride material, and uses the cmp processing procedure that planarization is carried out on this tectal surface.
22. the manufacture method of LCD of organic luminous material film transistor as claimed in claim 17 is characterized in that: the composition material of this printing opacity conductive glass layer comprises the tin indium oxide material.
23. the manufacture method of LCD of organic luminous material film transistor as claimed in claim 17 is characterized in that: this second tectal composition material is selected from one of them of polyimide material, polyacrylate material and group that transparent photoresist is formed.
24. the manufacture method of LCD of organic luminous material film transistor as claimed in claim 17, it is characterized in that: this second tectal composition material comprises silicon nitride material, and uses the cmp processing procedure that planarization is carried out on this tectal surface.
25. the manufacture method of LCD of organic luminous material film transistor as claimed in claim 17 is characterized in that: this color filter comprises red filter, green filter and blue filter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021243387A CN1175306C (en) | 2002-06-19 | 2002-06-19 | Structure for LCD of organic luminous material film transistor and making method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021243387A CN1175306C (en) | 2002-06-19 | 2002-06-19 | Structure for LCD of organic luminous material film transistor and making method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1385741A CN1385741A (en) | 2002-12-18 |
| CN1175306C true CN1175306C (en) | 2004-11-10 |
Family
ID=4745393
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB021243387A Expired - Fee Related CN1175306C (en) | 2002-06-19 | 2002-06-19 | Structure for LCD of organic luminous material film transistor and making method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1175306C (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7310124B2 (en) * | 2003-05-09 | 2007-12-18 | Sharp Kabushiki Kaisha | Color filter substrate, method of manufacturing the color filter and display device |
| CN100363839C (en) * | 2003-05-16 | 2008-01-23 | 友达光电股份有限公司 | First yellow light and etching method in liquid crystal display panel front section array manufacturing technology |
| CN100388102C (en) * | 2003-07-31 | 2008-05-14 | 奇美电子股份有限公司 | Film transistor liquid crystal display panel, its array substrate and mfg. method |
| CN100379050C (en) * | 2003-10-20 | 2008-04-02 | 友达光电股份有限公司 | Full-colour organic electroluminescent display device and manufacturing method thereof |
| CN102667589B (en) * | 2009-12-29 | 2014-10-22 | 夏普株式会社 | Liquid crystal display device |
| KR20180079081A (en) * | 2016-12-30 | 2018-07-10 | 엘지디스플레이 주식회사 | Liquid crystal display device |
| CN109254463A (en) * | 2018-11-13 | 2019-01-22 | 惠科股份有限公司 | Liquid crystal display device with a light guide plate |
-
2002
- 2002-06-19 CN CNB021243387A patent/CN1175306C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1385741A (en) | 2002-12-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6872113B2 (en) | Method for making a structure of organic light-emitting material TFT display | |
| RU2394267C2 (en) | Light-retarding display device with control electric field | |
| CN111244127B (en) | Manufacturing method of display panel, display panel and display device | |
| KR100616396B1 (en) | Electro luminescence display device | |
| CN1722925A (en) | Organic electroluminescence display device | |
| US20070081321A1 (en) | Backlight unit and display apparatus having the same | |
| JP4458965B2 (en) | Color filter substrate and liquid crystal display device having the same | |
| CN1746735A (en) | Display device and manufacture method thereof | |
| EP1449904A3 (en) | White-emitting organic electroluminescent device with color filters to improve efficiency | |
| CN1716014A (en) | Liquid crystal display device having good image quality | |
| CN1760741A (en) | Semi-transmission LCD device and the method that forms it | |
| CN1607429A (en) | Liquid crystal display device | |
| CN1175306C (en) | Structure for LCD of organic luminous material film transistor and making method thereof | |
| TWM609847U (en) | Display panel and display | |
| CN1514679A (en) | Electroluminescent display equipment and its manufacturing method and device | |
| US20100317250A1 (en) | Method of fabricating a color backlight device | |
| CN1278166C (en) | Manufacturing method of liquid crystal display device having concave shaped reflection layer | |
| US6734930B2 (en) | Structure of organic light-emitting TFT LCD and method of making the same | |
| JPH06110033A (en) | Liquid crystal display device | |
| CN1293411C (en) | Manufacture for photosensitive insulating film pattern and reflection electrode and its liquid crystal display device | |
| CN1523936A (en) | Electroluminescent display device | |
| CN110379941A (en) | The preparation method and display module of high-resolution Micro-OLED | |
| CN1191493C (en) | Structure for LCD of organic luminous material film transistor and making method therof | |
| CN1975537A (en) | Backlight for color liquid crystal display apparatus | |
| CN1598678A (en) | Organic luminescent material thin-film transistor liquid crystal display |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |