CN117525234A - Chip and chip transfer method - Google Patents

Chip and chip transfer method Download PDF

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Publication number
CN117525234A
CN117525234A CN202311591613.2A CN202311591613A CN117525234A CN 117525234 A CN117525234 A CN 117525234A CN 202311591613 A CN202311591613 A CN 202311591613A CN 117525234 A CN117525234 A CN 117525234A
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China
Prior art keywords
chip
screening channel
electrode
chips
screening
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CN202311591613.2A
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Chinese (zh)
Inventor
赵龙
刘丹丹
黄杰勤
黄灿强
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Dongguan Sino Crystal Semiconductor Co ltd
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Dongguan Sino Crystal Semiconductor Co ltd
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Application filed by Dongguan Sino Crystal Semiconductor Co ltd filed Critical Dongguan Sino Crystal Semiconductor Co ltd
Priority to CN202311591613.2A priority Critical patent/CN117525234A/en
Publication of CN117525234A publication Critical patent/CN117525234A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The invention discloses a chip, which comprises a light-transmitting substrate and an epitaxial layer arranged on the light-transmitting substrate, wherein a first electrode and a second electrode are further arranged on the epitaxial layer, the first electrode and the second electrode are arranged along the length direction of the chip, a reflecting layer is further arranged on other areas of the epitaxial layer except for the areas where the first electrode and the second electrode are arranged, and a chamfer is arranged at the bottom of the light-transmitting substrate and is positioned on one side of the chip in the width direction of the chip, so that the weight of one side of the chip with the chamfer is smaller than that of the other opposite side. According to the embodiment of the invention, the first surface of the chip is set as the reflecting layer, the second surface of the chip is set as the light-transmitting substrate, and the chamfer is arranged on the chip, so that the same electrode orientation and the same chip with the first surface facing upwards or the second surface facing upwards are obtained, the mixed crystal of the LED chip can be realized in a simple and efficient mode, the need of sorting the LED chip in a large quantity is avoided, and the utilization rate of the LED chip is greatly improved.

Description

Chip and chip transfer method
Technical Field
The invention relates to the field of LED display, in particular to a chip and a chip transfer method.
Background
With the continuous improvement of indoor display application technology, projection and DLP (Digital Light) are currently used
Processing, digital light Processing), LCD (Liquid Crystal Display ), PDP (Plasma Display Panel, plasma display panel) and the like display application products have not fully satisfied market application requirements. There are also some drawbacks in various respects that make it impersonating the technological development. The LED (Light Emitting Diode ) full-color display technology overcomes many defects of the above products, such as Mini LEDs (LED display screen and backlight) and Micro LEDs, and becomes the first choice for indoor and outdoor display, such as command centers, outdoor advertising screens, conference centers, and the like, and one of the main development targets of consumer electronic screens.
Generally, the wavelength peak distribution of the chips in the LED wafer is wide and can reach 10nm under the limitation of epitaxial growth equipment, process and chip process. Because the human eyes easily recognize the wavelength difference of the visible light wave band, the Mini LED and the Micro LED display all require that the luminous wavelength of the chip is distributed in a narrower range so as to prevent the occurrence of a block-shaped color difference block to be recognized by the human eyes. By block color difference is meant that the colors within a block, i.e. the wavelengths are uniform, while there is a slight difference in color between blocks. In the existing solution, for example, in Mini LED display, the chip is selected according to parameters such as wavelength by sorting, so that the problem of huge sorting amount and very low chip utilization rate exists. In Micro LED display, the problem of wide light-emitting wavelength distribution of the chip cannot be solved by means of a conventional epitaxial chip process.
Therefore, how to realize mixed crystal of the LED chips to avoid sorting and improve the chip utilization rate becomes an important technical problem to be solved by those skilled in the art.
Disclosure of Invention
The invention aims to provide a chip and a chip transfer method, which are used for solving the problems of huge mixed crystal sorting amount and very low chip utilization rate in the prior art.
In order to achieve the above object, in a first aspect, the present invention provides a chip, the chip includes a light-transmitting substrate and an epitaxial layer disposed on the light-transmitting substrate, a first electrode and a second electrode are further disposed on the epitaxial layer, the first electrode and the second electrode are disposed along a length direction of the chip, a reflective layer is further disposed on other regions of the epitaxial layer except for regions where the first electrode and the second electrode are disposed, a chamfer is disposed at a bottom of the light-transmitting substrate, and the chamfer is disposed at one side of the chip in a width direction so that a weight of one side of the chip having the chamfer is smaller than a weight of an opposite side.
Preferably, the chip includes a first surface where the reflective layer is located and a second surface opposite to the first surface, where the second surface is a bottom surface of the transparent substrate, and the reflectivity of the first surface to light is greater than that of the second surface to light.
Preferably, the light-transmitting substrate is a sapphire substrate or a silicon carbide substrate, and the chamfer extends along the length direction of the chip.
In a second aspect, the present invention also provides a method for transferring chips, including the steps of: providing a plurality of chips of the first aspect, wherein the chips comprise a first surface where the reflecting layer is located and a second surface opposite to the first surface, and placing the plurality of chips in a solution for mixing; providing a first screening channel, wherein an identification device and a removal device are sequentially arranged in the length direction of the first screening channel; flowing the solution mixed with the chip through a first screening channel, wherein when the identification device identifies that the chip has a designated orientation, the removal device is not operated, and the chip with the designated orientation passes through the first screening channel; when the identification device identifies that the chip does not have the designated orientation, controlling the removal device to act so as to remove the chip which does not have the designated orientation from the first screening channel; determining electrode orientations of the first and second electrodes of the chip; providing a second screening channel, wherein the width of the second screening channel is larger than the width of the chip and smaller than the length of the chip, the second screening channel is contracted towards one side in the width direction of the electrode in the length direction of the second screening channel, and a notch is formed so that the chip, the chamfer of which is close to the notch, passes through the second screening channel, and the chip, the chamfer of which is far from the notch, is laterally turned over and separated from the second screening channel under the action of gravity; moving the chip passing through the first screening channel to the second screening channel to obtain a chip with a required electrode orientation; and transferring the chips passing through the first screening channel and the second screening channel onto a transfer carrier plate.
In a third aspect, the present invention also provides a method for transferring chips, including the steps of: providing a plurality of chips of the first aspect, wherein the chips comprise a first surface where the reflecting layer is located and a second surface opposite to the first surface, and placing the plurality of chips in a solution for mixing; determining electrode orientations of the first and second electrodes of the chip; providing a second screening channel, wherein the width of the second screening channel is larger than the width of the chip and smaller than the length of the chip, the second screening channel is contracted towards one side in the width direction of the electrode in the length direction of the second screening channel, and a notch is formed so that the chip, the chamfer of which is close to the notch, passes through the second screening channel, and the chip, the chamfer of which is far from the notch, is laterally turned over and separated from the second screening channel under the action of gravity; flowing the solution mixed with the chip through a second screening channel to obtain a chip with a required electrode orientation; providing a first screening channel, wherein an identification device and a removal device are sequentially arranged in the length direction of the first screening channel; moving the chip passing through the second screening channel to the first screening channel, wherein when the identification device identifies that the chip has a designated orientation, the removal device does not act, and the chip with the designated orientation passes through the first screening channel; when the identification device identifies that the chip does not have the designated orientation, controlling the removal device to act so as to remove the chip which does not have the designated orientation from the first screening channel; and transferring the chips passing through the first screening channel and the second screening channel onto a transfer carrier plate.
Preferably, the designated orientation is such that the first side of the chip faces away from the first screening channel.
Preferably, the identification device is a photodiode, the removal device is a blowing device, and the photodiode determines whether the chip has a designated orientation by receiving first reflected light reflected by the first surface of the chip and second reflected light reflected by the second surface of the chip.
Preferably, the identification device is a camera, and the camera obtains an image of the chip to determine whether the chip has a specified orientation.
Preferably, the transfer carrier plate is arranged on a movable bearing table, and the movable bearing table drives the transfer carrier plate to move and receive chips with required orientations passing through the first screening channel and the second screening channel.
Preferably, the transfer carrier plate is provided with a plurality of inverted trapezoidal grooves, the inverted trapezoidal grooves comprise guide grooves on the upper portion and positioning grooves on the lower portion, the openings of the guide grooves are larger than those of the positioning grooves, the positioning grooves correspond to the chips, the chips pass through the first screening channel and the second screening channel in a holding mode, and after the step of transferring the chips passing through the first screening channel and the second screening channel to the transfer carrier plate, the transfer carrier plate further comprises: and transferring the chip in the inverted trapezoid groove to a blue film or a substrate.
Compared with the prior art, the embodiment of the invention sets the first surface of the chip as the reflecting layer and the second surface as the light-transmitting substrate, can be used for screening the chip with the first surface facing upwards or the chip with the second surface facing upwards, and can greatly improve the utilization rate of the LED chip by setting the chamfer on the chip for screening the electrode orientations of the first electrode and the second electrode so as to obtain the same electrode orientation and the same chip with the first surface facing upwards or the second surface facing upwards, and can realize mixed crystal of the LED chip in a simple and efficient mode, thereby avoiding the need of carrying out massive sorting on the LED chip.
Drawings
Fig. 1 is a schematic side view of a chip of the present invention.
Fig. 2 is a schematic bottom view of the chip of the present invention.
Fig. 3 is a schematic top view of the chip of the present invention.
FIG. 4 is a schematic diagram of a chip according to the present invention passing through a first screening channel.
FIG. 5 is a schematic diagram of a chip according to the present invention passing through a second screening channel.
Fig. 6 is a schematic diagram of a structure of the chip of the present invention in butt joint with a transfer carrier plate disposed on a carrier.
Fig. 7 is a schematic diagram of a structure of a chip of the present invention after docking with a transfer carrier.
Fig. 8 is a schematic diagram of the structure of the chip after transferring to a blue film.
Detailed Description
In order to describe the technical content, the constructional features and the effects achieved by the present invention in detail, the following description is made with reference to the embodiments in conjunction with the accompanying drawings.
Example 1
As shown in fig. 1 to 3, an embodiment of the present invention provides a chip 10, the chip 10 includes a transparent substrate 1 and an epitaxial layer 2 provided on the transparent substrate 1, a first electrode 31 and a second electrode 32 are further provided on the epitaxial layer 2, the first electrode 31 and the second electrode 32 are arranged along a length direction a of the chip 10, a reflective layer 20 is further provided on other regions of the epitaxial layer 2 except for regions where the first electrode 31 and the second electrode 32 are located, a chamfer 11 is provided at a bottom of the transparent substrate 1, and the chamfer 11 is located at one side in a width direction b of the chip 10 such that a weight of one side of the chip 10 having the chamfer 11 is smaller than a weight of the opposite side.
Specifically, the chip 10 is an LED chip, the chamfer 11 extends along the length direction a of the chip 10, the chamfer 11 is formed by laser cutting, the chip 10 can be turned over towards the other side under the action of gravity through the arrangement of the chamfer 11, and the embodiment of the invention can be used for screening the chip 10 with the first surface 101 upwards or the chip 10 with the second surface 102 upwards by arranging the first surface 101 as the reflecting layer 20 and arranging the second surface 102 as the light-transmitting substrate 1, and the chamfer 11 is arranged on the chip 10 for screening the electrode orientations of the first electrode 31 and the second electrode 32, so that the same electrode orientation and the chip 10 with the same first surface 101 upwards or the chip 102 with the second surface upwards are obtained, mixed crystal of the LED chip 10 can be realized in a simple and efficient mode, and huge sorting of the LED chip 10 is not needed, so that the utilization rate of the LED chip 10 is greatly improved.
In some other embodiments of the present invention, the chamfer 11 may be formed by other cutting methods, and the specific cutting method is not limited herein, and any method may be used as long as the chamfer 11 can be formed.
In the embodiment of the invention, the chip 10 includes a first surface 101 where the reflective layer is located and a second surface 102 opposite to the first surface 101, the second surface 102 is a bottom surface of the transparent substrate 1, the reflectivity of the first surface 101 to light is greater than the reflectivity of the second surface 102, specifically, the transparent substrate 1 is a sapphire substrate, the chip 10 includes the first surface 101 where the reflective layer 20 is located and the second surface 102 opposite to the first surface 101, the reflective layer 20 is a bragg reflective layer, the reflective layer 20 is an insulating reflective film with high reflectivity, the reflectivity of the reflective layer 20 to light is greater than 90%, the reflectivity of the transparent substrate 1 to light is less than or equal to 30%, the reflective layer 20 can improve the reflectivity of the first surface 101 of the chip 10 on one hand, and can effectively protect the chip 10 on the other hand, meanwhile, the reflective layer 20 has a large light reflectivity difference from the transparent substrate 1, and can implement photoelectric recognition subsequently.
In other embodiments of the present invention, the transparent substrate 1 may be another transparent substrate such as silicon carbide, which is not limited herein.
Example two
As shown in fig. 1 to 8, the embodiment of the present invention further provides a transferring method of a chip 10, including the following steps:
s1, providing a plurality of chips 10, wherein the chips 10 comprise a first surface 101 where a reflecting layer 20 is positioned and a second surface 102 opposite to the first surface 101, and placing the chips 10 in a solution for mixing; specifically, the electrically qualified chips 10 are placed in a solution for fully mixing, for example, the solution can be fully mixed by stirring, the solution comprises an organic solvent and/or a soldering flux, and the like, wherein the organic solvent comprises a mixture of one or more solvents selected from purified water, ethanol, acetone and isopropanol, the solvents cannot damage the LED chips 10, for example, the LED chips 10 are corroded or LED chips 10 are short-circuited, and the solvents are volatile solvents, so that the mixed crystal efficiency is improved, and the problem of poor correction caused by brightness and electrical concentration after the chips 10 are fixed is solved.
S2, providing a first screening channel 4, wherein an identification device 5 and a removing device 6 are sequentially arranged in the length direction of the first screening channel 4, and the identification device 5 is used for identifying whether the chip 10 has a designated orientation or not; specifically, the width of the first screening channel 4 is greater than the width of the chip 10 and less than the length of the chip 10, preferably, the width of the first screening channel 4 is slightly greater than the width of the chip 10, and the chip 10 can enter the first screening channel 4 when the length direction of the chip 10 is consistent with the length direction a of the first screening channel 4 by setting the width of the first screening channel 4, so that the chip 10 with the length direction a consistent with the length direction a of the first screening channel 4 is screened. Of course, in some other embodiments, the width of the first screening channel 4 may also be larger than the length of the chip 10.
S3, enabling the solution mixed with the chip 10 to flow through the first screening channel 4, and enabling the removing device 5 to be inactive when the identifying device 5 identifies that the chip 10 has the designated direction, and enabling the chip 10 with the designated direction to pass through the first screening channel 4; when the identification device 5 identifies that the chip 10 does not have the designated orientation, controlling the removal device 5 to act so as to remove the chip 10 which does not have the designated orientation from the first screening channel 4; specifically, after the chip 10 flows onto the first screening channel 4, there may be two cases where the first side 101 of the chip 10 faces upward (i.e., where the first side 101 of the chip 10 faces away from the first screening channel 4), and another case where the second side 102 of the chip 10 faces upward (i.e., where the first side 101 of the chip 10 faces toward the first screening channel 4), so that the identification device 5 is required to identify the chip 10 having the designated orientation, for example, in the embodiment of the present invention, the direction in which the first side 101 of the chip faces away from the first screening channel 4 is designated, and therefore, the identification device 5 is required to screen the chip 10 in which the first side 101 of the chip 10 faces away from the first screening channel 4.
S4, determining electrode orientations of the first electrode 31 and the second electrode 32 of the chip 10; specifically, as shown in fig. 3, the first electrode 31 and the second electrode 32 are an N-type electrode and a P-type electrode, respectively, and the required electrode orientations of the chip 10 are determined, that is, the first electrode 31 is oriented forward or the second electrode 32 is oriented forward, where forward refers to the transmission direction of the first screening channel 4, for example, in the embodiment of the present invention, the chip 10 with the first electrode 31 oriented forward and the second electrode 32 oriented backward needs to be screened.
S5, providing a second screening channel 7, wherein the width of the second screening channel 7 is larger than the width of the chip 10 and smaller than the length of the chip 10, the second screening channel 7 is contracted towards one side in the width direction of the corresponding electrode in the length direction of the second screening channel 7, and a notch 71 is formed so that the chip 10 with the chamfer 11 close to the notch 71 passes through the second screening channel 7 and the chip 10 with the chamfer 11 far from the notch 71 is laterally turned away from the second screening channel 7 under the action of gravity; specifically, as shown in fig. 5, the width of the second screening channel 7 is greater than the width of the chip 10 and less than the length of the chip 10, preferably, the width of the second screening channel 7 is slightly greater than the width of the chip 10, and the chip 10 can enter the second screening channel 7 when the length direction of the chip 10 is consistent with the length direction of the second screening channel 7 by setting the width of the second screening channel 7, so that the chip 10 with the length direction consistent with the length direction of the second screening channel 7 is screened. At this time, even if the width of the first screening lane 4 is larger than the length of the chip 10, the chip 10 whose desired length direction coincides with the length direction of the second screening lane 7 can be screened out by the second screening lane 7, and the second screening lane 7 is connected to the first screening lane 4, since the chamfer 11 provided on the chip 10 determines the desired electrode direction, for example, the chip 10 whose first electrode 31 is directed forward and whose second electrode 32 is directed backward needs to be screened, the chip 10 whose second electrode 32 is directed forward and whose first electrode 31 is directed backward needs to be removed, and therefore, the chip 10 whose width direction b side of the second screening lane 7 is contracted and notched 71 is formed corresponding to the chamfer 11 of the electrode and the chip 10 so that the chamfer 11 is directed away from the notch 71 is laterally turned out of the second screening lane 7 and into the mixed solution. When the chip 10 in this state passes through the second screening channel 7, as shown in the chip state 11e in fig. 5, the channel notch 71 does not affect the chip 10, and the chip 10 can normally pass through the second screening channel 7 to enter the next step, as shown in the chip state 11f in fig. 5, when the chip 10 passes through the second screening channel 7 in this state, the chip 10 will leave the second screening channel 7 to enter the mixed solution again when passing through the notch 71 due to the notch 71.
S6, the chip 10 passing through the first screening channel 4 is moved to the second screening channel 7 to obtain the chip with the required electrode orientation.
S7, transferring the chips 101 passing through the first screening channel 4 and the second screening channel 7 onto a transfer carrier plate 9. Specifically, the required chips 10 after screening can be collected and arranged by the transfer plate 9 for subsequent transfer or welding processes.
According to the embodiment of the invention, the chip 10 with the designated orientation is identified through the identification device, the chamfer 11 is arranged on the chip 10 and the electrode orientation of the chip 10 can be screened by matching with the notch 71 of the second screening channel 7, and the mixed crystal of the LED chip 10 is realized in a simple and efficient mode, so that the need of carrying out massive sorting on the LED chip 10 is avoided, and the utilization rate of the LED chip 10 is greatly improved.
In the embodiment of the present invention, the identification device 5 receives the light with different intensities reflected by the reflective layer 20 and the transparent substrate 1 to determine whether the chip 10 has a designated direction, and since the first surface 101 of the chip 10 is the reflective layer 20 and the second surface 102 is the transparent substrate, the reflectivity of the reflective layer 20 and the transparent substrate 1 to the light is different, for example, the designated direction in the embodiment of the present invention is the direction that the first surface 101 of the chip deviates from the first screening channel 4, the identification device 5 continuously identifies the chip 10 passing through the identification device 5, as shown by the chip state 11d in fig. 4, when the identification device 5 receives the reflected light of the first surface 101 of the chip 10, the identification device 5 does not act, and the chip 10 enters the next procedure through the first screening channel 4; as shown in the chip state 11c in fig. 4, when the identification device 5 receives the reflected light from the second side 102 of the chip 10, the identification device 5 controls the removal device 6 to act by emitting a signal to move the chip 10 out of the first screening channel 4 and into the mixed solution for circulation;
specifically, as shown in fig. 4, the identification device 5 is a photodiode, the removing device 6 is an air blowing device, the photodiode determines whether the chip 10 has a designated orientation by receiving the first reflected light reflected by the first surface 101 of the chip 10 and the second reflected light reflected by the second surface 102 of the chip 10, the intensity of the first reflected light is greater than that of the second reflected light, when the identification device 5 receives the second reflected light, the identification device 5 feeds back a first signal to control the removing device 6 to blow air to blow the chip 10 off the first screening channel 4, when the identification device 5 receives the first reflected light, the identification device 5 does not feed back a signal, the removing device 6 is not started, and the chip 10 passes through the first screening channel 4. Specifically, the first signal may be a voltage signal or a current signal, the removing device 6 includes a gas blowing hole 61 provided on the first screening channel 4, when the identifying device 5 feeds back the first signal, the removing device 6 blows gas through the gas blowing hole 61 to blow the chip 10 out of the first screening channel 4 when the chip 10 passes through the gas blowing hole 61, and when the identifying device 5 receives the first reflected light, the chip 10 can normally pass through the first screening channel 4 and enter the next process.
The position of the air blowing hole 61 is not limited as long as the chips 10 can be blown out of the first screening lane 4, and the removing device 6 is not limited to the air blowing method, and any method may be used as long as the chips 10 that do not satisfy the requirements can be removed from the first screening lane 4, for example, a robot structure or the like may be selected.
In some other implementations of the embodiments of the present invention, the identifying device 5 may also be a camera, where the camera obtains an image of the chip 10 to determine whether the chip 10 has a specified orientation. Specifically, the recognition device 5 continuously shoots the image of the chip 10 passing through the recognition device 5 and determines whether the chip 10 has a specified orientation, for example, the specified orientation in the embodiment of the present invention is the direction in which the first face 101 of the chip deviates from the first screening channel 4, when the recognition device 5 recognizes that the first face 101 of the chip 10 deviates from the first screening channel 4, the recognition device 5 does not act, and the chip 10 passes through the first screening channel 4 and enters the next step; as shown in the chip state 11c in fig. 4, when the recognition means 5 recognizes that the first face 101 of the chip 10 is directed toward the first screening channel 4, the recognition means 5 controls the removal means 6 to act by emitting a signal to move the chip 10 out of the first screening channel 4 and into the mixed solution for circulation.
In the embodiment of the invention, the transfer plate 9 is arranged on the movable bearing table 8, and the movable bearing table 8 is adopted to drive the transfer plate 9 to move and receive the chips 10 with the required orientation, which are transmitted through the first screening channel 4 and the second screening channel 7. Specifically, the required chips 10 after screening can be collected and arranged by the transfer plate 9 for subsequent transfer or welding processes.
As shown in fig. 6, in the embodiment of the present invention, a plurality of inverted trapezoid grooves 90 are disposed on the transfer plate 9, the inverted trapezoid grooves 90 include an upper guide groove 91 and a lower positioning groove 92, the opening of the guide groove 91 is larger than that of the positioning groove 92, the positioning groove 92 is disposed corresponding to the chip 10 to accommodate the chip 10 transferred from the second screening channel 7, specifically, the inverted trapezoid grooves 90 are uniformly distributed on the transfer plate 9, the guide groove 91 is provided with a first groove wall 911, the first groove wall 911 is vertically disposed, the positioning groove 92 is provided with a second groove wall 921, the second groove wall 921 is obliquely disposed and the second groove wall 921 is matched with the chamfer 11, and a step surface 93 is formed between the first groove wall 911 and the second groove wall 921. The range of the guide groove 91 for receiving the chip 10 can be made larger by setting the guide groove 91 to include the vertically arranged first groove wall 911, and the requirements for the design precision of the inverted trapezoid groove 90 and the movement precision of the movable bearing table 8 are lower, which is beneficial to practical use.
In the embodiment of the present invention, the carrier 8 receives the chips 10 with the required orientation, which are transferred from the second screening channel 7, in a manner of moving at fixed intervals in the two-dimensional plane, and drops the chips 10 into the positioning slots 92 in a vibration manner. Specifically, the inverted trapezoidal grooves 90 may be distributed on the transfer carrier 9 in a matrix of multiple rows and multiple columns, the moving carrier 8 moves in a manner of moving at a fixed distance to receive the chips 10 transferred from the second screening channel 7, the fixed distance may correspond to a distance between centers of two adjacent inverted trapezoidal grooves 90, and the chips 10 may fall into the positioning grooves 92 through vibration so that the electrode heights of the chips 10 are kept consistent.
In the embodiment of the present invention, step S6, transferring the chip 101 passing through the first screening channel 4 and the second screening channel 7 onto the transfer carrier 9, and then further includes:
and S7, transferring the chip 10 in the inverted trapezoid groove 90 to the blue film 100 or to the substrate. Specifically, the depth of the inverted trapezoid groove 90 is the same as the height of the LED chip 10 or slightly lower than the height of the LED chip 10, and after a certain number of chips 10 are arranged, the chips 10 can be transferred to the blue film 100 or transferred to the substrate for soldering.
According to the transfer method of the chip 10, through the structural design of the chip 10 and the matching of two screening modes, the chip 10 is quickly transferred to the blue film 100 or the substrate while the mixed crystal problem of the chip 10 is solved, meanwhile, the orientation height of the electrodes of the chip 10 is kept consistent, and the design is very ingenious.
Example III
The difference between this embodiment and the second embodiment is that: in this embodiment, the solution mixed with the chip 10 is first passed through the second screening channel 7 to screen the chip 10 with the desired electrode orientation, and then the chip 10 passing through the second screening channel 7 is moved to the first screening channel 4 to screen the chip 10 with the designated orientation, which is described in detail below.
The embodiment of the invention also provides a transfer method of the chip 10, which comprises the following steps:
s10, providing a plurality of chips 10, wherein the chips 10 comprise a first surface 101 where the reflecting layer 20 is positioned and a second surface 102 opposite to the first surface 101, and placing the chips 10 into a solution for mixing; specifically, the electrically qualified chips 10 are placed in a solution for fully mixing, for example, the solution can be fully mixed by stirring, the solution comprises an organic solvent and/or a soldering flux, and the like, wherein the organic solvent comprises a mixture of one or more solvents selected from purified water, ethanol, acetone and isopropanol, the solvents cannot damage the LED chips 10, for example, the LED chips 10 are corroded or LED chips 10 are short-circuited, and the solvents are volatile solvents, so that the mixed crystal efficiency is improved, and the problem of poor correction caused by brightness and electrical concentration after the chips 10 are fixed is solved.
S20, determining electrode orientations of a first electrode 31 and a second electrode 32 of the chip 10; specifically, as shown in fig. 3, the first electrode 31 and the second electrode 32 are an N-type electrode and a P-type electrode, respectively, and the required electrode orientation of the chip 10 is determined, that is, the first electrode 31 is oriented forward or the second electrode 32 is oriented forward, where forward refers to the transmission direction of the first screening channel 4 and the second screening channel 7, for example, in the embodiment of the present invention, the chip 10 in which the first electrode 31 is oriented forward and the second electrode 32 is oriented backward needs to be screened.
S30, providing a second screening channel 7, wherein the width of the second screening channel 7 is larger than the width of the chip 10 and smaller than the length of the chip 10, the second screening channel 7 is contracted towards one side in the width direction of the corresponding electrode in the length direction of the second screening channel 7, and a notch 71 is formed so that the chip 10 with the chamfer 11 close to the notch 71 passes through the second screening channel 7 and the chip 10 with the chamfer 11 far from the notch 71 is laterally turned away from the second screening channel 7 under the action of gravity; specifically, as shown in fig. 5, the width of the second screening channel 7 is greater than the width of the chip 10 and less than the length of the chip 10, preferably, the width of the second screening channel 7 is slightly greater than the width of the chip 10, and the chip 10 can enter the second screening channel 7 when the length direction of the chip 10 is consistent with the length direction of the second screening channel 7 by setting the width of the second screening channel 7, so that the chip 10 with the length direction consistent with the length direction of the screening channel is screened. Since the chamfer 11 provided on the chip 10 determines the desired electrode direction, for example, the chip 10 with the first electrode 31 facing forward and the second electrode 32 facing backward needs to be screened, and therefore, the chip 10 with the second electrode 32 facing forward and the first electrode 31 facing backward needs to be removed, and therefore, the second screening channel 7 is contracted and notched 71 is formed on one side in the width direction b thereof corresponding to the chamfer 11 of the electrode facing and the chip 10 so that the chip 10 with the chamfer 11 away from the notch 71 is turned upside down off the second screening channel 7 and is brought into the mixed solution. When the chip 10 in this state passes through the second screening channel 7, as shown in the chip state 11e in fig. 5, the channel notch 71 does not affect the chip 10, and the chip 10 can normally pass through the second screening channel 7 to enter the next step, as shown in the chip state 11f in fig. 5, when the chip 10 passes through the second screening channel 7 in this state, the chip 10 will leave the second screening channel 7 to enter the mixed solution again when passing through the notch 71 due to the notch 71.
And S40, enabling the solution mixed with the chip 10 to flow through the second screening channel 7 so as to obtain the chip with the required electrode orientation.
S50, providing a first screening channel 4, wherein an identification device 5 and a removing device 6 are sequentially arranged in the length direction of the first screening channel 4, and the identification device 5 is used for identifying whether the chip 10 has a designated orientation or not; specifically, the width of the first screening channel 4 is greater than the width of the chip 10 and less than the length of the chip 10, preferably, the width of the first screening channel 4 is slightly greater than the width of the chip 10, and the first screening channel 4 can be accessed only when the length direction of the chip 10 is consistent with the length direction a of the first screening channel 4 by setting the width of the first screening channel 4, so that the chip 10 with the length direction consistent with the length direction a of the first screening channel 4 is screened.
S60, moving the chips 10 passing through the second screening channel 7 to the first screening channel 4, wherein when the identification device 5 identifies that the chips 10 have the designated orientation, the removal device 5 does not act, and the chips 10 with the designated orientation pass through the first screening channel 4; when the identification device 5 identifies that the chip 10 does not have the designated orientation, controlling the removal device 5 to act so as to remove the chip 10 which does not have the designated orientation from the first screening channel 4; specifically, after the chip 10 flows onto the first screening channel 4, there may be two cases where the first side 101 of the chip 10 faces upward (i.e., where the first side 101 of the chip 10 faces away from the first screening channel 4), and another case where the second side 102 of the chip 10 faces upward (i.e., where the first side 101 of the chip 10 faces toward the first screening channel 4), so that the identification device 5 is required to identify the chip 10 having the designated orientation, for example, in the embodiment of the present invention, the direction in which the first side 101 of the chip faces away from the first screening channel 4 is designated, and therefore, the identification device 5 is required to screen the chip 10 in which the first side 101 of the chip 10 faces away from the first screening channel 4.
S70, transferring the chips 101 passing through the first screening channel 4 and the second screening channel 7 onto the transfer carrier plate 9. Specifically, the required chips 10 after screening can be collected and arranged by the transfer plate 9 for subsequent transfer or welding processes.
The transfer method of the chip 10 of the embodiment of the invention solves the problem of mixed crystal of the chip 10 by the structural design of the chip 10 and matching two screening modes, and simultaneously transfers the chip 10 to the blue film 100 or the substrate rapidly, and simultaneously keeps the height of the orientation of the electrode of the chip 10 consistent, thus the design is very ingenious.
The foregoing disclosure is merely illustrative of the principles of the present invention, and thus, it is intended that the scope of the invention be limited thereto and not by this disclosure, but by the claims appended hereto.

Claims (10)

1. The chip is characterized by comprising a light-transmitting substrate and an epitaxial layer arranged on the light-transmitting substrate, wherein a first electrode and a second electrode are further arranged on the epitaxial layer, the first electrode and the second electrode are arranged along the length direction of the chip, a reflecting layer is further arranged on other areas of the epitaxial layer except for the areas where the first electrode and the second electrode are located, a chamfer is arranged at the bottom of the light-transmitting substrate, and the chamfer is located on one side of the width direction of the chip so that the weight of one side of the chip with the chamfer is smaller than that of the other opposite side.
2. The chip of claim 1, wherein the chip comprises a first side on which the reflective layer is disposed and a second side opposite the first side, the second side being a bottom surface of the light-transmissive substrate, the first side having a reflectivity to light that is greater than a reflectivity to light of the second side.
3. The chip of claim 1, wherein the light-transmitting substrate is a sapphire substrate or a silicon carbide substrate, and the chamfer extends along a length direction of the chip.
4. The chip transferring method is characterized by comprising the following steps:
providing a plurality of chips according to any one of claims 1 to 3, wherein the chips comprise a first surface on which the reflecting layer is arranged and a second surface opposite to the first surface, and placing the plurality of chips in a solution for mixing;
providing a first screening channel, wherein an identification device and a removal device are sequentially arranged in the length direction of the first screening channel;
flowing the solution mixed with the chip through a first screening channel, wherein when the identification device identifies that the chip has a designated orientation, the removal device is not operated, and the chip with the designated orientation passes through the first screening channel; when the identification device identifies that the chip does not have the designated orientation, controlling the removal device to act so as to remove the chip which does not have the designated orientation from the first screening channel;
determining electrode orientations of the first and second electrodes of the chip;
providing a second screening channel, wherein the width of the second screening channel is larger than the width of the chip and smaller than the length of the chip, the second screening channel is contracted towards one side in the width direction of the electrode in the length direction of the second screening channel, and a notch is formed so that the chip, the chamfer of which is close to the notch, passes through the second screening channel, and the chip, the chamfer of which is far from the notch, is laterally turned over and separated from the second screening channel under the action of gravity;
moving the chip passing through the first screening channel to the second screening channel to obtain a chip with a required electrode orientation;
and transferring the chips passing through the first screening channel and the second screening channel onto a transfer carrier plate.
5. The chip transferring method is characterized by comprising the following steps:
providing a plurality of chips according to any one of claims 1 to 3, wherein the chips comprise a first surface on which the reflecting layer is arranged and a second surface opposite to the first surface, and placing the plurality of chips in a solution for mixing;
determining electrode orientations of the first and second electrodes of the chip;
providing a second screening channel, wherein the width of the second screening channel is larger than the width of the chip and smaller than the length of the chip, the second screening channel is contracted towards one side in the width direction of the electrode in the length direction of the second screening channel, and a notch is formed so that the chip, the chamfer of which is close to the notch, passes through the second screening channel, and the chip, the chamfer of which is far from the notch, is laterally turned over and separated from the second screening channel under the action of gravity;
flowing the solution mixed with the chip through a second screening channel to obtain a chip with a required electrode orientation;
providing a first screening channel, wherein an identification device and a removal device are sequentially arranged in the length direction of the first screening channel;
moving the chip passing through the second screening channel to the first screening channel, wherein when the identification device identifies that the chip has a designated orientation, the removal device does not act, and the chip with the designated orientation passes through the first screening channel; when the identification device identifies that the chip does not have the designated orientation, controlling the removal device to act so as to remove the chip which does not have the designated orientation from the first screening channel;
and transferring the chips passing through the first screening channel and the second screening channel onto a transfer carrier plate.
6. The method of transferring chips of claim 4 or 5, wherein said designated orientation is such that a first side of said chip faces away from said first screening channel.
7. The method according to claim 4 or 5, wherein the identifying means is a photodiode, and the removing means is an air blowing means, and the photodiode judges whether the chip has a specified orientation by receiving a first reflected light reflected from a first face of the chip and a second reflected light reflected from a second face of the chip.
8. The method according to claim 4 or 5, wherein the recognition means is a camera that judges whether the chip has a specified orientation by acquiring an image of the chip.
9. The method of claim 4 or 5, wherein the transfer carrier is disposed on a moving carrier, and the moving carrier drives the transfer carrier to move and receive the chips having the desired orientation passing through the first screening channel and the second screening channel.
10. The method of transferring chips as defined in claim 9, wherein the transferring carrier is provided with a plurality of inverted trapezoidal grooves, the inverted trapezoidal grooves include an upper guide groove and a lower positioning groove, the guide groove has an opening larger than that of the positioning groove, the positioning groove is provided corresponding to the chips to accommodate the chips passing through the first screening channel and the second screening channel, and after the step of transferring the chips passing through the first screening channel and the second screening channel onto the transferring carrier, the method further comprises:
and transferring the chip in the inverted trapezoid groove to a blue film or a substrate.
CN202311591613.2A 2023-11-24 2023-11-24 Chip and chip transfer method Pending CN117525234A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202311591613.2A CN117525234A (en) 2023-11-24 2023-11-24 Chip and chip transfer method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202311591613.2A CN117525234A (en) 2023-11-24 2023-11-24 Chip and chip transfer method

Publications (1)

Publication Number Publication Date
CN117525234A true CN117525234A (en) 2024-02-06

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CN202311591613.2A Pending CN117525234A (en) 2023-11-24 2023-11-24 Chip and chip transfer method

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Country Link
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