CN117524927B - Detection device for LED chip thorn crystal transfer process - Google Patents

Detection device for LED chip thorn crystal transfer process Download PDF

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Publication number
CN117524927B
CN117524927B CN202311467578.3A CN202311467578A CN117524927B CN 117524927 B CN117524927 B CN 117524927B CN 202311467578 A CN202311467578 A CN 202311467578A CN 117524927 B CN117524927 B CN 117524927B
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thorn
crystal
platform
led chip
transfer process
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CN117524927A (en
Inventor
马莉
陈彦晖
陈云
罗翔远
吕澎威
侯茂祥
陈新
周琪
任鸿儒
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Guangdong University of Technology
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Guangdong University of Technology
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/01—Arrangements or apparatus for facilitating the optical investigation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The invention relates to the technical field of chip transfer packaging, and provides a detection device for an LED chip thorn crystal transfer process, which comprises a thorn crystal shooting platform, a computer and a pneumatic controller; the thorn brilliant platform of shooing includes the mount, slidable connection in camera and triaxial fine setting slip table on the mount, set up in anchor clamps on the triaxial fine setting slip table, set up in light source support on the anchor clamps, set up in light source on the light source support, set up in Z axle fine setting slip table on mount one side, set up in peel off base plate support, portal frame on the Z axle fine setting slip table, set up in thorn crystal seat and set up in on one side of portal frame just be located on the thorn crystal seat the felting needle at the top of peeling off base plate support. The detection device for the LED chip thorn crystal transfer process can detect the movement path of the puncture needle and the thorn crystal transfer effect in the thorn crystal process, so that the cost for adjusting the thorn crystal process parameters is reduced, and the efficiency is improved.

Description

Detection device for LED chip thorn crystal transfer process
Technical Field
The invention relates to the technical field of chip transfer packaging, in particular to a detection device applied to LED chip spining transfer process of Mini/Micro chips.
Background
Compared with the traditional liquid crystal screen and organic light emitting semiconductor, the Mini LED (sub-millimeter light emitting diode) has longer service life, faster response speed, better brightness uniformity, finer HDR (high dynamic range imaging) partition, higher contrast and color saturation, and also has the remarkable advantages of high brightness, low power consumption, ultrahigh resolution and the like.
In the open window period of Micro LED technology development, mini LEDs are introduced as a compromise technology, and are widely applied to the fields of transparent screens, foldable screens, enhancement, virtual reality and the like. Mini-LEDs refer to LED chips with a geometry of 100-300 μm and a chip pitch of 0.1-1mm, while Micro LED chips have a size of less than 50 μm.
In the field of direct display of Mini/Micro-LEDs, tens of millions of micron-sized crystal grains are required to be efficiently and accurately transferred to a driving circuit substrate to form electrical interconnection, and due to the large number of crystal grains and difficulty in repairing, the tolerance of display products to pixel errors is extremely low, and a new challenge is provided for a huge amount of transfer technology. The huge transfer technologies such as electrostatic force transfer, fluid self-assembly, roller transfer and the like have the defects of insufficient maturity, low transfer precision, high direction control difficulty and the like, and the laser transfer technology has the problem of energy limitation.
The chip and the backboard are placed oppositely, the chip is ejected out by the puncture needle, so that the chip is transferred to the target substrate, the machine for realizing the transfer method is a thorn crystal machine, one of key components is a thorn crystal seat for controlling the movement of the puncture needle, the internal structure of the thorn crystal machine is highly integrated, the height from the puncture needle to the target substrate is generally kept at about 1mm for ensuring the thorn crystal transfer efficiency, and at present, no device special for observing the movement path of the puncture needle and the thorn crystal transfer effect in the thorn crystal process exists, so that the process parameter optimization can only be carried out on the thorn crystal machine after repeated sample transfer is carried out for many times according to the transfer effect, and the cost for thorn crystal process parameter adjustment is increased and the efficiency is low.
Disclosure of Invention
The invention provides a detection device for a thorn crystal transferring process of an LED chip, and aims to solve the problems that the cost of thorn crystal process parameter adjustment is increased and the efficiency is low because the movement path of a puncture needle and the thorn crystal transferring effect in the thorn crystal process cannot be observed in the conventional thorn crystal transferring technology.
The embodiment of the invention provides a detection device for a LED chip thorn crystal transferring process, which comprises a thorn crystal shooting platform, a computer and an air pressure controller, wherein the computer and the air pressure controller are respectively connected with the thorn crystal shooting platform; the wafer-puncturing shooting platform comprises a fixing frame, a camera and a three-axis fine-tuning sliding table which are connected onto the fixing frame in a sliding manner, a clamp arranged on the three-axis fine-tuning sliding table, a light source bracket arranged on the clamp, a light source arranged on the light source bracket, a Z-axis fine-tuning sliding table arranged on one side of the fixing frame, a peeling substrate bracket arranged on the Z-axis fine-tuning sliding table, a portal frame, a wafer seat arranged on one side of the portal frame, and a puncturing needle which is arranged on the wafer seat and is positioned at the top of the peeling substrate bracket, wherein the irradiation directions of the camera and the light source are opposite to each other and are aligned to the top of the peeling substrate bracket, and the top of the peeling substrate bracket is used for placing wafers; the computer is used for controlling the vertical thorn crystal path of thorn crystal platform, the atmospheric pressure controller is used for controlling the atmospheric pressure in the thorn crystal seat in order to drive the pjncture needle motion.
Preferably, the fixing frame comprises a transverse guide rail, a transverse platform in sliding connection with the transverse guide rail, and a first longitudinal platform and a second longitudinal platform which are respectively in sliding connection with the transverse platform; the camera is fixed in first vertical platform, triaxial fine setting slip table is fixed in second vertical platform, Z axle fine setting slip table is fixed in one side of transverse guide, transverse platform's slip direction with the slip direction of first vertical platform is perpendicular, the slip direction of second vertical platform with the slip direction of first vertical platform is parallel.
Preferably, the triaxial fine tuning sliding table is fixed on the second longitudinal platform through a first bolt.
Preferably, the camera is a fixed-focus camera.
Preferably, the clamp is fixed on the triaxial fine tuning slipway through a second bolt.
Preferably, the stripping substrate support is fixed on the Z-axis fine adjustment sliding table through a third bolt.
Preferably, a flexible mechanism and a voice coil motor are arranged in the crystal-puncturing seat.
Preferably, the spindly seat is fixed on the portal frame through a fourth bolt.
Preferably, the puncture needle is a tungsten steel puncture needle, the puncture needle is a round flat bottom needle or a round head needle, and the diameter of the puncture needle is 75-100 μm or 30-50 μm.
Compared with the prior art, the detection device for the LED chip thorn crystal transferring process has the advantages that the thorn crystal shooting platform is designed, the thorn crystal shooting platform is limited to comprise the fixing frame, the camera, the three-axis fine adjustment sliding table, the clamp, the light source support, the light source, the Z-axis fine adjustment sliding table, the stripping substrate support, the portal frame, the thorn crystal seat and the puncture needle, so that the movement path of the puncture needle and the thorn crystal transferring effect in the thorn crystal process can be detected by matching with the computer and the air pressure controller, the cost of thorn crystal process parameter adjustment is reduced, the efficiency is improved, meanwhile, the control is more convenient, the observation is clearer, and the real-time debugging of the path of the puncture needle is facilitated.
Drawings
The present invention will be described in detail with reference to the accompanying drawings. The foregoing and other aspects of the invention will become more apparent and more readily appreciated from the following detailed description taken in conjunction with the accompanying drawings. In the accompanying drawings:
Fig. 1 is a schematic structural diagram of a detection device for a die-bonding transfer process of an LED chip according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a die-bonding shooting platform in a detection device for a die-bonding transfer process of an LED chip according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a wafer according to an embodiment of the present invention;
FIG. 4 is a graph showing the change in height from a target substrate over time during vertical lancing of a lancet provided by an embodiment of the present invention.
1, A thorn crystal shooting platform; 2. a computer; 3. an air pressure controller; 111. a needle; 112. a portal frame; 113. a spine base; 121. a wafer; 122. a die-expanding ring; 123. a UV film; 124. a chip; 131. a light source; 132. a light source support; 141. stripping the substrate support; 142. z-axis fine adjustment sliding table; 151. three-axis fine tuning sliding table; 152. a clamp; 161. a transverse platform; 162. a first longitudinal platform; 163. a transverse guide rail; 164. a second longitudinal platform; 17. and a camera.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
The embodiment of the invention provides a detection device for a LED chip thorn crystal transferring process, which comprises a thorn crystal shooting platform 1, a computer 2 and an air pressure controller 3, wherein the computer 2 and the air pressure controller 3 are respectively connected with the thorn crystal shooting platform 1; the thorn crystal shooting platform 1 comprises a fixed frame, a camera 17 and a triaxial fine tuning sliding table 151 which are slidably connected to the fixed frame, a clamp 152 arranged on the triaxial fine tuning sliding table 151, a light source bracket 132 arranged on the clamp 152, a light source 131 arranged on the light source bracket 132, a Z-axis fine tuning sliding table 142 arranged on one side of the fixed frame, a peeling substrate bracket 141 arranged on the Z-axis fine tuning sliding table 142, a portal frame 112, a thorn crystal seat 113 which is slidably connected with one side of the portal frame 112, and a pricking needle 111 which is arranged on the thorn crystal seat 113 and is positioned at the top of the peeling substrate bracket 141, wherein the irradiation directions of a lens of the camera 17 and the light source 131 are opposite to each other and are aligned to the top of the peeling substrate bracket 141 respectively, and the top of the peeling substrate bracket 141 is used for placing a wafer 121; the computer 2 is used for controlling the vertical thorn crystal path of the thorn crystal platform, and the air pressure controller 3 is used for controlling the air pressure in the thorn crystal seat 113 to drive the needle 111 to move.
The detection device for the LED chip die-bonding transfer process in this embodiment can detect the movement path of the pricker 111 and the die-bonding transfer effect in the die-bonding process of the Mini-LED chip 124 and the Micro-LED chip 124 (collectively referred to as the chip 124).
The wafer 121 is clamped and fixed by the clamp 152.
As shown in connection with fig. 3, wafer 121 includes a flip ring 122, a UV film 123, and Mini/Micro-LED chips 124; the edge of the UV film 123 is fixed by a die-expanding ring 122, mini/Micro-LED chips 124 are adhered to the lower surface of the UV film 123 and are formed by arranging a plurality of chips 124 in an array, and the edge of the die-expanding ring 122 is clamped and fixed by a clamp 152. The Mini/Micro-LED chip 124 is an array of chips 124 after laser cutting and film expansion, and the long side surfaces of the Mini/Micro-LED chip 124 are parallel and opposite to the camera head of the camera 17.
In order to avoid the die 124 closer to the camera 17 from forming a shadow for the die 124 to be bumped during the bumped shot, the die 124 to be bumped needs to be selected as the die 124 at the edge of the array of dies 124.
Mini/Micro-LED chip 124 has three types of RGB, mini-LED size is between 100-400 μm, micro-LED size is less than 50 μm; the lancet 111 should be selected for the corresponding model of lancet 111 when the testing system is directed to different models of chips 124.
The fixing frame comprises a transverse guide rail 163, a transverse platform 161 in sliding connection with the transverse guide rail 163, a first longitudinal platform 162 and a second longitudinal platform 164 which are respectively in sliding connection with the transverse platform 161; the camera 17 is fixed on the first longitudinal platform 162, the three-axis fine tuning sliding table 151 is fixed on the second longitudinal platform 164, the z-axis fine tuning sliding table 142 is fixed on one side of the transverse guide rail 163, the sliding direction of the transverse platform 161 is perpendicular to the sliding direction of the first longitudinal platform 162, and the sliding direction of the second longitudinal platform 164 is parallel to the sliding direction of the first longitudinal platform 162.
The first longitudinal rail and the second longitudinal rail are slidably connected along the longitudinal rails on the transverse platform 161, respectively.
The transverse guide 163, the Z-axis fine tuning slide 142 and the gantry 112 are all placed on the same table top.
The triaxial fine tuning slipway 151 is fixed to the second longitudinal platform 164 by a first bolt.
The camera 17 is a fixed focus camera, also known as a high speed camera, and therefore needs to be fixed on the first longitudinal stage 162, focusing being accomplished by adjusting the distance to the wafer 121 or the lancet 111.
The frame rate of the camera 17 is 10488 frames/second, the UV film 123 may be replaced by a blue film in some embodiments, one side of the product of the UV film 123 is provided with UV glue, the Mini-LED chip 124 is adhered by the viscosity of the UV glue, and the UV glue can be reduced by a glue stripper in some embodiments to make the chip 124 easier to peel off.
The clamp 152 is fixed to the triaxial fine tuning slide 151 by a second bolt.
The peeling substrate holder 141 is fixed to the Z-axis fine adjustment slide table 142 by a third bolt.
The precision of the Z-axis fine tuning slide 142 and the three-axis fine tuning slide 151 were 10 μm, and the maximum stroke was 10mm.
The inside of the spinstand 113 is provided with a flexible mechanism and a voice coil motor. The spinstand 113 is used to control the movement of the lancet 111.
The spine seat 113 is fixed to the gantry 112 by a fourth bolt.
The lancet 111 is a tungsten steel lancet 111, the shape of the lancet 111 is a round flat bottom needle or a round head needle, and the diameter of the lancet 111 is 75-100 μm (for Mini-LED chip 124) or 30-50 μm (for Micro-LED chip 124). The puncture needle 111 is fixed below the puncture crystal seat 113, the puncture crystal seat 113 and the internal structure thereof are controlled to perform a vertical movement along the direction (Z-axis direction) perpendicular to the horizontal plane, a specific path is set by the computer 2, and compressed gas is introduced into the puncture crystal seat 113 through the air pressure controller 3 for driving the puncture needle 111 to perform the puncture crystal movement; before the spining experiment is started, the air pressure controller 3 needs to be adjusted to make the air pressure reach the limit pressure value of the drive spining seat 113.
The puncture needle 111 transfers only one chip 124 in one puncture period, and the puncture can be started by adjusting the air pressure controller 3 to more than 10 Mpa.
According to the actual requirement, the peeling substrate support 141 can be removed, so that the lancet 111 performs vertical lancing and shooting within the field of view of the camera 17 after the lancing and shooting.
FIG. 4 is a graph showing the time-dependent change of the height of the needles 111 from the target substrate during the vertical die-punching process, wherein the die-punching action period of the needles 111 is about 8ms, the upper surface of the peeling substrate support 141 is used for fixing a substrate assisting in peeling the chips 124, in particular a quartz glass plate with a flat surface, a layer of double faced adhesive tape is attached to the surface of the glass plate and can be used for transferring the chips 124 from the UV film 123, the height of the Z-axis fine-tuning sliding table 142 is adjusted so that the lowest point of the motion path of the needles 111 is added with the thickness of the UV film 123 and the chips 124 on the surface of the double faced adhesive tape, and the initial height of the Mini/Micro-LED chips 124 is adjusted by adjusting the Z-axis knob on the three-axis fine-tuning sliding table 151; the height of the camera 17 is not adjustable, but the highest point to the lowest point of the pricking needle 111 can be covered in the visual field, so that the depth of the pricking crystal can be adjusted by adjusting the initial position of the Mini/Micro-LED chip 124, and the Mini/Micro-LED chip 124 can be ensured not to deviate from the visual field due to the fact that the initial height is too high.
The operation steps of the detection device for the LED chip thorn crystal transfer process in the embodiment are as follows:
and (3) feeding operation: the prepared wafer 121 is placed on the jig 152 with the long side direction of the chip 124 facing the camera 17.
And (3) aligning operation: after the camera 17 is started and focusing and other operations are completed, the length of the long side of the chip 124 in the camera 17 is observed by rotating the wafer 121 before fixing the wafer 121, and the rotation is stopped when the length is longest, and the clamp 152 is fixed; then, the three-axis fine adjustment sliding table 151 is adjusted to enable the wafer 121 to move in the X-axis direction and the Y-axis direction (two directions perpendicular to each other on the plane and perpendicular to the Z-axis direction), the positions of the pricking needle 111 and the wafer 124 to be pricked are directly observed to enable the two to be approximately aligned, the three-axis fine adjustment sliding table 151 is adjusted to enable the wafer 121 to move upwards along the Z-axis direction, accordingly downward protrusion of the wafer 124 under the action of the pricking needle 111 is observed in a picture, and the pricking needle 111 is enabled to be in the center of the wafer 124 by adjusting the positions of the wafer 121 in the X-axis direction and the Y-axis direction.
And (3) thorn crystal detection operation: starting the recording function of the camera 17, starting the crystal seat 113 to control the puncture needle 111 to perform vertical crystal puncturing movement, wherein the puncture needle 111 firstly contacts with the upper surface of the UV film 123 in the crystal puncturing process and drives the UV film 123 to move downwards and deform, and the chip 124 is adhered to the lower surface of the UV film 123, so that the chip 124 is peeled off from the edge of the chip 124 in the downward moving process of the UV film 123; the puncture needle 111 drives the chip 124 to contact the upper surface of the double-sided tape and then to be recovered upwards, and the chip 124 is peeled off from the UV film 123 by the adhesive force of the double-sided tape, so that the transfer of the chip 124 is completed; the camera 1717 records the whole transfer process of the chip 124, and analyzes the thorn crystal path according to the result of the photographing to adjust the thorn crystal path.
The detection device for the LED chip thorn crystal transferring process of the embodiment is characterized in that the thorn crystal shooting platform 1 is designed and defined, the thorn crystal shooting platform 1 comprises a fixing frame, a camera 17, a three-axis fine adjustment sliding table 151, a clamp 152, a light source bracket 132, a light source 131, a Z-axis fine adjustment sliding table 142, a stripping substrate bracket 141, a portal frame 112, a thorn crystal seat 113 and a needle 111, so that the movement path of the needle 111 and the thorn crystal transferring effect in the thorn crystal process can be detected by matching with a computer 2 and an air pressure controller 3, the cost of thorn crystal technological parameter adjustment is reduced, the efficiency is improved, meanwhile, the control is more convenient, the observation is clearer, and the path of the needle 111 is convenient to debug in real time.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
While the embodiments of the present invention have been illustrated and described in connection with the drawings, what is presently considered to be the most practical and preferred embodiments of the invention, it is to be understood that the invention is not limited to the disclosed embodiments, but on the contrary, is intended to cover various equivalent modifications and equivalent arrangements included within the spirit and scope of the appended claims.

Claims (9)

1. The detection device for the LED chip thorn crystal transfer process is characterized by comprising a thorn crystal shooting platform, a computer and an air pressure controller, wherein the computer and the air pressure controller are respectively connected with the thorn crystal shooting platform; the wafer-puncturing shooting platform comprises a fixing frame, a camera and a three-axis fine-tuning sliding table which are connected onto the fixing frame in a sliding manner, a clamp arranged on the three-axis fine-tuning sliding table, a light source bracket arranged on the clamp, a light source arranged on the light source bracket, a Z-axis fine-tuning sliding table arranged on one side of the fixing frame, a peeling substrate bracket arranged on the Z-axis fine-tuning sliding table, a portal frame, a wafer seat arranged on one side of the portal frame, and a puncturing needle which is arranged on the wafer seat and is positioned at the top of the peeling substrate bracket, wherein the irradiation directions of the camera and the light source are opposite to each other and are aligned to the top of the peeling substrate bracket, and the top of the peeling substrate bracket is used for placing wafers; the computer is used for controlling the vertical thorn crystal path of thorn crystal platform, the atmospheric pressure controller is used for controlling the atmospheric pressure in the thorn crystal seat in order to drive the pjncture needle motion.
2. The device for detecting the flip chip transfer process of the LED chip as in claim 1, wherein the fixing frame comprises a transverse guide rail, a transverse platform in sliding connection with the transverse guide rail, a first longitudinal platform and a second longitudinal platform in sliding connection with the transverse platform respectively; the camera is fixed in first vertical platform, triaxial fine setting slip table is fixed in second vertical platform, Z axle fine setting slip table is fixed in one side of transverse guide, transverse platform's slip direction with the slip direction of first vertical platform is perpendicular, the slip direction of second vertical platform with the slip direction of first vertical platform is parallel.
3. The device for detecting a die-through transfer process of an LED chip of claim 2, wherein said tri-axial fine tuning slide is secured to said second longitudinal platform by a first bolt.
4. The apparatus for detecting a flip-chip transfer process of claim 1, wherein the camera is a fixed-focus camera.
5. The device for detecting a die-bonding transfer process of an LED chip according to claim 1, wherein the jig is fixed to the triaxial fine tuning slide table by a second bolt.
6. The apparatus for inspecting a flip-chip transfer process of an LED chip of claim 1, wherein said lift-off substrate holder is secured to said Z-axis fine tuning slide by a third screw.
7. The device for detecting the flip-chip transfer process of an LED chip as recited in claim 1, wherein a flexible mechanism and a voice coil motor are disposed inside the flip-chip mount.
8. The apparatus according to claim 1, wherein the spine base is fixed to the gantry by a fourth bolt.
9. The LED chip die-bonding transfer process detection device according to claim 1, wherein the spike is a tungsten steel spike, the spike is in the shape of a round flat bottom spike or a round head spike, and the diameter of the spike is 75-100 μm or 30-50 μm.
CN202311467578.3A 2023-11-06 2023-11-06 Detection device for LED chip thorn crystal transfer process Active CN117524927B (en)

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Publication number Priority date Publication date Assignee Title
KR100986274B1 (en) * 2010-01-28 2010-10-07 주식회사 이노비즈 A apparatus for led probing and sorting
CN113451179A (en) * 2021-06-29 2021-09-28 广东阿达智能装备有限公司 Huge transfer equipment for tiny electronic components
KR20230081535A (en) * 2021-11-30 2023-06-07 주식회사 프로텍 Apparatus for Transferring Micro LED Chips
CN115424967A (en) * 2022-09-19 2022-12-02 深圳市优界科技有限公司 Grain transfer equipment and grain transfer process thereof
CN219696423U (en) * 2022-12-13 2023-09-15 深圳市优界科技有限公司 Needle top wafer transfer device

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Mini/Micro LED 巨量转移关键技术与装备研究现状;汤晖 等;振动、测试与诊断;20231031;第43卷(第5期);第839-846页 *

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