CN117524913A - Method for detecting whether wafer is heated in semiconductor process - Google Patents
Method for detecting whether wafer is heated in semiconductor process Download PDFInfo
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- CN117524913A CN117524913A CN202311779297.1A CN202311779297A CN117524913A CN 117524913 A CN117524913 A CN 117524913A CN 202311779297 A CN202311779297 A CN 202311779297A CN 117524913 A CN117524913 A CN 117524913A
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- 238000000034 method Methods 0.000 title claims abstract description 78
- 230000008569 process Effects 0.000 title claims abstract description 54
- 239000004065 semiconductor Substances 0.000 title claims abstract description 30
- 238000010438 heat treatment Methods 0.000 claims abstract description 79
- 230000007246 mechanism Effects 0.000 claims abstract description 21
- 230000007423 decrease Effects 0.000 claims abstract description 12
- 230000008859 change Effects 0.000 claims abstract description 11
- 238000012546 transfer Methods 0.000 claims description 15
- 230000005540 biological transmission Effects 0.000 claims description 7
- 238000001816 cooling Methods 0.000 claims description 6
- 238000012360 testing method Methods 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 4
- 230000000630 rising effect Effects 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052710 silicon Inorganic materials 0.000 abstract description 5
- 239000010703 silicon Substances 0.000 abstract description 5
- 235000012431 wafers Nutrition 0.000 description 196
- 238000005468 ion implantation Methods 0.000 description 10
- 239000007789 gas Substances 0.000 description 9
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 6
- 238000009529 body temperature measurement Methods 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- 238000010884 ion-beam technique Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
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- 229910052757 nitrogen Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
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Abstract
The invention relates to a method for detecting whether a wafer is heated in a semiconductor process, which belongs to the technical field of semiconductor processes and comprises the following steps: heating the wafer carrier to a set temperature; transferring the wafer onto a wafer carrier; continuously measuring the temperature change of the wafer carrier; if the temperature of the wafer carrier is significantly reduced, then the wafer is heated; if the temperature of the wafer carrier does not decrease significantly, it indicates that the wafer is not heated. The scheme realizes determining whether the wafer is reasonably heated under the condition of not increasing the complexity of the equipment system, and realizes a foolproof interlocking mechanism of the process; the problem that the silicon wafer cannot be measured in temperature is solved, the situation that the wafer is not heated and the system cannot find out is avoided, and the yield and quality of the high-end semiconductor process are effectively improved.
Description
Technical Field
The invention belongs to the technical field of semiconductor processes, and particularly relates to a method for detecting whether a wafer is heated or not in a semiconductor process.
Background
In, for example, high temperature ion implantation processes, it is desirable to heat a wafer in a high vacuum equipment chamber to a set temperature well above room temperature and then perform ion implantation, and for this purpose, it is desirable to be able to monitor whether the wafer is heated. In the high-end chip manufacturing process, the temperature measurement is not allowed to be carried out by directly contacting the surface of the wafer, so that the structure of the surface of the wafer is prevented from being damaged, and an infrared temperature measurement mode is generally adopted at present. However, at room temperature, silicon has a forbidden band width of 1.12eV and theoretically does not absorb infrared light; the refractive index of monocrystalline silicon in the infrared band is 3.5; high purity silicon is almost transparent in the near infrared band (1.1 μm-1.5 μm) and therefore it is not possible to measure the temperature of the wafer by infrared measurement, the actual measured temperature being the temperature of the electrostatic chuck below the wafer. If the electrostatic chuck is not adsorbed with a firm wafer, a large amount of vacuum gaps exist between the electrostatic chuck and the wafer, the heated electrostatic chuck cannot well conduct heat to the wafer, and the existing temperature measurement mode cannot monitor the abnormal condition, so that the process parameters are not required; particularly in mass production, if abnormality cannot be detected in time, serious time and material waste are caused.
Disclosure of Invention
Based on the technical problems in the prior art, the invention provides a method for detecting whether a wafer is heated or not in a semiconductor process, which solves the problem that the temperature of the wafer cannot be detected in the prior art, ensures that the wafer is reasonably heated in the process, is beneficial to improving the yield and quality of the high-end semiconductor process, and avoids the resource waste caused by the fact that the failure condition cannot be found.
According to the technical scheme of the invention, the invention provides a method for detecting whether a wafer is heated in a semiconductor process, wherein the applied semiconductor equipment is provided with a wafer bearing and heating mechanism, the wafer bearing and heating mechanism comprises a wafer bearing piece, a heating module and a temperature measuring device, the heating module is used for heating the wafer bearing piece, the wafer bearing piece is used for heating the wafer arranged on the wafer bearing piece, and the temperature measuring device is used for detecting the temperature of the wafer bearing piece;
the method for detecting whether the wafer is heated in the semiconductor process comprises the following steps:
step S1, heating a wafer carrier to a set temperature;
step S2, the wafer is transmitted to a wafer carrier;
step S3, continuously measuring the temperature change of the wafer carrier;
step S4, if the temperature of the wafer carrier is obviously reduced, the wafer is heated; if the temperature of the wafer carrier does not decrease significantly, it indicates that the wafer is not heated.
According to some embodiments, the wafer carrier is an electrostatic chuck.
According to some embodiments, the heating module is disposed on a back side of the wafer carrier, and the back side of the heating module is further provided with a thermal insulation layer and a cooling module in sequence.
According to some embodiments, the applied semiconductor device is a high temperature ion implanter, which comprises a vacuum process module, a vacuum transmission module, a load lock module and a device front end module which are sequentially connected; the vacuum transmission module is also connected with a preheating module, and the wafer bearing and heating mechanism is positioned on the preheating module.
According to some embodiments, the applied semiconductor device is a high temperature ion implanter, which comprises a vacuum process module, a vacuum transmission module, a load lock module and a device front end module which are sequentially connected; the vacuum process module is provided with a scanning robot, and the wafer bearing and heating mechanism is positioned on the scanning robot.
According to some embodiments, in step S1, after the wafer carrier is heated to the set temperature, the heating power of the heating module is kept constant, so that the wafer carrier is maintained at the set temperature;
in the step S2 and the step S3, the heating power of the heating module is still unchanged; under normal conditions, the wafer carrier outputs heat to the wafer while being continuously heated by the heating module, and the heat transfer speed between the wafer and the wafer carrier is faster than the heat transfer speed between the wafer carrier and the heating module, resulting in a decrease in temperature of the wafer carrier after contacting the wafer.
According to some embodiments, in step S2, at a set first moment in time, the heating module stops heating the wafer carrier, or the heating module continues heating at a set power that is less than the heating power of step S1; wherein the first moment is at the same time or before the wafer is placed on the wafer carrier, or at the same time or before the wafer is in close contact with the wafer carrier.
According to some embodiments, in step S3, the temperature of the wafer carrier is measured continuously at least from a first time; wherein the first moment is at the same time or before the wafer is placed on the wafer carrier, or at the same time or before the wafer is in close contact with the wafer carrier.
According to some embodiments, in step S4, if the temperature is reduced by 0.5-10 ℃, it is determined that the temperature is significantly reduced; if the temperature is not lowered or the value of the lowering is less than 0.5 ℃, it is determined that the temperature is not lowered significantly.
According to some embodiments, the method further comprises obtaining a corresponding relation between the wafer temperature and the wafer carrier temperature through theoretical calculation or actual test in advance; further, in step S4, the temperature of the wafer at any time is correspondingly obtained according to the temperature of the wafer carrier measured at any time.
According to some embodiments, further comprising estimating the temperature of the wafer by:
wafer from room temperature T 0 Rising to a set temperature T 1 The amount of heat required is δq,
δQ＝m w C w (T 1 -T 0 )，
wherein m is w C is the mass of the wafer w Is the specific heat capacity of the wafer;
these heat δq are derived from the electrostatic chuck, the temperature of which drops δt e ，
Wherein C is e Specific heat capacity, m, of electrostatic chuck e Is the mass of the electrostatic chuck;
accordingly, when the temperature change of the electrostatic chuck is measured to be δT e When in use, canCalculating to obtain the temperature rise delta T of the wafer w ，
The wafer heating process is a continuous heat exchange process, so the final wafer temperature is
Compared with the prior art, the invention has the following beneficial technical effects:
the method for detecting whether the wafer is heated in the semiconductor process has ingenious conception, and provides a scheme for reflecting the temperature change of the wafer by utilizing the temperature change quantity of the wafer bearing heating mechanism aiming at the characteristics of a plurality of heat transfer modes of the wafer in the vacuum environment in the semiconductor process, so that the wafer is reasonably heated under the condition of not increasing the complexity of an equipment system, and a foolproof interlocking mechanism of the process is realized; the problem that the silicon wafer cannot be measured in temperature is solved, the situation that the wafer is not heated and the system cannot find out is avoided, and the yield and quality of the high-end semiconductor process are effectively improved.
Drawings
Fig. 1 is a schematic structural view of a wafer carrying heating mechanism according to an embodiment of the present invention.
Fig. 2 is a schematic structural view of a high temperature ion implanter according to an embodiment of the present invention.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is apparent that the described embodiments are some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that, for convenience of description, only the portions related to the present invention are shown in the drawings. Embodiments of the invention and features of the embodiments may be combined with each other without conflict.
It should be noted that the terms "first," "second," and the like herein are merely used for distinguishing between different devices, modules, or units and not for limiting the order or interdependence of the functions performed by such devices, modules, or units.
It should be noted that references to "one", "a plurality" and "a plurality" in this disclosure are intended to be illustrative rather than limiting, and those skilled in the art will appreciate that "one or more" is intended to be construed as "one or more" unless the context clearly indicates otherwise.
The invention provides a method for detecting whether a wafer is heated or not in a semiconductor process, which solves the problem that the temperature of the wafer cannot be detected in the prior art, ensures that the wafer in the process is reasonably heated, is beneficial to improving the yield and quality of a high-end semiconductor process, and avoids resource waste caused by incapability of finding under the fault condition.
Referring to fig. 1, in a method for detecting whether a wafer is heated in a semiconductor process according to an embodiment of the present invention, a wafer-carrying heating mechanism 1 is provided in a semiconductor device, the wafer-carrying heating mechanism includes a wafer carrier 1, a heating module 2 and a temperature measuring device 5, and the heating module 2 and the temperature measuring device 5 are connected to the wafer carrier 1 in a contact manner or are not directly connected to each other. The wafer carrier 1 is, for example, but not limited to, an electrostatic chuck. The wafer carrier 1 is connected to the semiconductor device cavity by, for example, a support structure or a robot structure. The wafer carrier 1 has a heating module 2, for example, the main heating element is a tungsten filament, the heating module 2 is used for heating the wafer carrier 1, and thus the wafer carrier 1 heats the wafer placed thereon, the temperature measuring device is used for detecting the temperature of the wafer carrier 1, and the temperature measuring device 5 is, for example, a thermocouple disposed on the side surface or the back surface of the wafer carrier 1. Further, the front surface of the wafer carrier 1 (for example, an electrostatic chuck) is used for contacting, supporting, adsorbing a wafer, and transferring heat, the heating module 2 is disposed on the back side of the wafer carrier 1, and the heat insulation layer 3 and the cooling module 4 are further disposed on the back side of the heating module 2 in sequence. The cooling module 4, such as a water-cooled disc, is used for cooling the back side of the wafer carrying heating mechanism 1, so as to avoid high temperature from being transferred to a connected supporting structure or a mechanical arm structure. The heat insulating layer 3 is positioned between the heating module 2 and the cooling module 4 to perform heat insulation.
More specifically, referring to fig. 2, in one embodiment, the semiconductor device is a high temperature ion implanter, which includes a vacuum process module 6, a vacuum transfer module 8, a load lock module 11, and a front end module 12 sequentially connected. A preheating module 13 is also connected to the inside or outside of the vacuum transfer module 8, and a wafer carrying heating mechanism is located in the preheating module 13.
The vacuum process module 6 is used for performing a low-temperature ion implantation process on a wafer, one side of the vacuum process module 6 is connected with an ion beam generating system and is used for inputting an ion beam, a Faraday cup 14 is arranged on the other side of the vacuum process module 6 and is used for receiving and detecting the ion beam, and a scanning robot 7 for fixing and moving the wafer is arranged between the ion beam generating system and the Faraday cup 14 in the vacuum process module 6. The vacuum transfer module 8 is mainly used for transferring wafers between various positions in a vacuum system, and a transfer robot 9 and a wafer notch orientation device 10 are arranged in the vacuum transfer module 8. The load lock module 11 is used to switch between an atmospheric environment and a vacuum environment and the equipment front end module 12 is used to move wafers in the atmospheric environment. The vacuum process module 6, the vacuum transmission module 8 and the load locking module 11 are all of cavity structures and are provided with a vacuumizing system independently, and the vacuumizing system comprises a vacuum pump and a vacuum gauge. The vacuum process module 6 and the vacuum transmission module 8 are continuously vacuumized in the process, so that the vacuum degree and the cleanliness of the process environment are ensured. The preheating module 13 is used for heating the wafer, preferably, the preheating module 13 is a cavity structure arranged on the side surface of the vacuum transmission module 8, and the wafer carrying heating mechanism is arranged in the cavity of the preheating module 13 through a supporting structure. Further, the back side of the wafer carrier 1 is further provided with a wafer back gas system, for example, an air hole is formed in the middle of the wafer carrier 1, the air hole is connected to the wafer back gas system through a pipeline, the wafer back gas system includes a gas cylinder and other required components, and inert gas such as nitrogen or argon is used in the gas cylinder. The working principle of the wafer back gas system is that the wafer is generally at normal temperature before being heated, and after being conveyed, placed and adsorbed on the wafer carrier 1 of the preheating module 13, a vacuum gap exists between the wafer and the wafer carrier 1 from the microscopic view, and only the part in actual contact can conduct heat, so that the temperature rising speed of the wafer is slower; a certain amount of gas is filled between the wafer and the wafer carrier 1 through the air holes, and gas molecules collide back and forth between the wafer and the wafer carrier 1, so that heat is transferred, and the wafer can be quickly heated. The preheating module 13 is an independent cavity, and the cavity of the preheating module 13 is connected with an independent preheating module vacuum gauge and a preheating module vacuum pump, so that the introduced gas can be rapidly pumped away after the wafer is heated and moved out of the preheating module 13, and the influence on other areas is avoided as much as possible.
In yet another embodiment, unlike the previous embodiments, a wafer-carrying heating mechanism is located on the scanning robot 7 to heat the wafer before and/or during ion implantation. It is conceivable that in a further embodiment a wafer carrying heating mechanism is provided both on the scanning robot 7 and in the preheating module 13.
The method for detecting whether the wafer is heated in the semiconductor process according to the embodiment of the invention mainly comprises the following steps.
Step S1, heating a wafer carrier to a set temperature; further, the set temperature is determined according to the process requirement, and after the wafer carrier is heated to the set temperature, the heating power of the heating module is kept unchanged, so that the wafer carrier is maintained at the set temperature, and the wafer is waited to be transmitted to the wafer carrier.
Step S2, the wafer is transmitted to a wafer carrier; taking the wafer bearing piece as an electrostatic chuck as an example, after the wafer is conveyed to the electrostatic chuck and adsorbed, the wafer is closely contacted with the electrostatic chuck under the action of electrostatic adsorption force to conduct contact heat conduction.
Step S3, continuously measuring the temperature change of the wafer carrier; further, continuously measuring the temperature of the wafer carrier at least from a first time; wherein the first moment is at the same time or before the wafer is placed on the wafer carrier or at the same time or before the wafer is closely contacted with the wafer carrier; more specifically, for example, the temperature measuring device is a thermocouple, and the temperature is continuously measured all the time in the process; for another example, the temperature measuring device is an infrared temperature measuring device, and the temperature measurement is performed only in a period of time after the first time begins.
In a particularly preferred embodiment, in step S2 and step S3, the heating power of the heating module remains unchanged. For example, the main heating element of the heating module is a tungsten filament, in step S1, the temperature of the tungsten filament is kept at, for example, 150 ℃, at this time, the current flowing into the tungsten filament is a certain value, and then the temperature of the wafer carrier is heated and stabilized at 150 ℃, in step S2, the tungsten filament still keeps the current and keeps the temperature, and continuously outputs heat to the wafer carrier, after the wafer contacts the wafer carrier, the wafer carrier continuously heats the wafer carrier while outputting heat to the wafer, and the heat transfer speed between the wafer and the wafer carrier is faster than the heat transfer speed between the wafer carrier and the heating module (for example, the heating module adopts a heat radiation mode, and the heat transfer speed is far smaller than the contact heat conduction mode), so that the temperature of the wafer carrier is reduced after the wafer carrier contacts the wafer. In abnormal situations, such as impurity particles on the surface of the electrostatic chuck, insufficient suction force of the electrostatic chuck, and the like, the electrostatic chuck and the wafer are not in close contact, so that heat cannot be well transferred, and the temperature of the wafer carrier is not obviously reduced.
It is conceivable that in other embodiments, the heating power of the heating module is not constant, and the temperature of the wafer carrier itself may also change to some extent due to the change of the heating module when the wafer is not carried, but in summary, under the same conditions, the temperature of the wafer carrier will have a significant drop process after the wafer is normally carried compared to the temperature profile of the wafer carrier that does not carry the wafer.
S4, analyzing the measured temperature data, for example, observing in a temperature curve mode, and if a process of obviously reducing the temperature of the wafer carrier occurs after the wafer carrier contacts the wafer, indicating that the wafer is heated; if the temperature of the wafer carrier does not decrease significantly, it indicates that the wafer is not heated. Specifically, for example, if the temperature decreases by 0.5 ℃ to 10 ℃ within a period of time (a preferable criterion is that the temperature decreases by 3 ℃ or more), the temperature is determined to be significantly decreased; if the temperature does not decrease over a period of time or the value of decrease (maximum magnitude of decrease) is less than 0.5 c (a preferred criterion is that the temperature decrease is less than 3 c) over a period of time, then it is determined that the temperature is not significantly decreased, and insufficient heat exchange between the wafer and the wafer carrier may be suspected, resulting in the wafer not being heated or an elevated temperature being achieved at a rate not designed for the process. The "period of time" may be determined according to the specific situation, for example, the second half of the time when the wafer carrier contacts the wafer, or the whole heating process when the set wafer is placed on the wafer carrier, etc.
The main principle of the invention is as follows: in a high vacuum environment, the energy absorbed by the wafer being heated is basically from the electrostatic chuck, so the temperature rise of the wafer can be represented by measuring the temperature drop of the electrostatic chuck, and the temperature of the electrostatic chuck can be measured by a conventional method such as a thermocouple. The wafer which cannot be measured can be measured by adopting the ingenious invention conception.
Preferably, the method further comprises the steps of obtaining a corresponding relation (data or formula, curve and the like) between the wafer temperature (or temperature variation) and the wafer carrier temperature (or temperature variation) through theoretical calculation or actual test in advance; further, in step S4, the temperature condition of the wafer at any time is correspondingly obtained according to the temperature condition of the wafer carrier measured at any time.
For example, in combination with specific parameters of the electrostatic chuck and the wafer, the temperature of the wafer is estimated by:
wafer from room temperature T 0 Rising to a set temperature T 1 The amount of heat required is δq,
δQ＝m w C w (T 1 -T 0 )，
wherein m is w C is the mass of the wafer w Is the specific heat capacity of the wafer;
these heat δq are derived from the electrostatic chuck, the temperature of which drops δt e ，
Wherein C is e Specific heat capacity, m, of electrostatic chuck e Is the mass of the electrostatic chuck;
further, when the temperature change of the electrostatic chuck is measured to be δT e When the above formula is combined, the temperature rise value delta T of the wafer can be calculated w ，
It should be noted that the above is a theoretical formula, and the actual heating process is a continuous heat exchange process, so the final wafer temperature T w Is thatSo as to meet the requirements of process production.
It is conceivable that the correspondence between the wafer temperature and the wafer carrier temperature may also be obtained by a pre-actual test, for example, using a test wafer directly connected with a temperature measuring device to obtain data and a correspondence curve of the wafer temperature and the wafer carrier temperature. The test wafer is identical or substantially identical in size, material structure, etc. to the actual process processed wafer.
The scheme is particularly suitable for the production process of SiGe fin field effect transistors (FinFETs), for example. The SiGe FinFET structure includes a thin film of SiGe and requires ion implantation during processing. In the prior art, after ion implantation is performed on, for example, a monocrystalline silicon wafer, the Si lattice on the surface is broken to form an amorphous structure, and then the surface layer lattice can be recovered by heat treatment by utilizing the unbroken lattice structure deep in the silicon wafer. However, since SiGe is only a thin layer, the lattice structure is broken completely during ion implantation, and then the lattice structure cannot be recovered basically by heat treatment, so that the quality of SiGe FinFET produced by conventional ion implantation system process is greatly compromised. By adopting the scanning robot with the wafer bearing heating mechanism to carry out the high-temperature ion implantation process, the scanning implantation of the thinner SiGe layer and the breaking of the lattice structure can be realized by setting the required process parameters, and meanwhile, the broken lattice is recovered, so that the wafer bearing heating mechanism can have the required lattice structure after the implantation is finally completed; and the ion implantation of the wafer can be intuitively confirmed to be performed at a desired high temperature by temperature measurement. Therefore, the invention has breakthrough and important effect on advanced semiconductor device manufacturing process.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and are not limiting; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. A method for detecting whether a wafer is heated in a semiconductor process is characterized in that the applied semiconductor equipment is provided with a wafer bearing and heating mechanism, the wafer bearing and heating mechanism comprises a wafer bearing piece, a heating module and a temperature measuring device, the heating module is used for heating the wafer bearing piece, the wafer bearing piece is used for heating the wafer placed on the wafer bearing piece, and the temperature measuring device is used for detecting the temperature of the wafer bearing piece;
the method for detecting whether the wafer is heated in the semiconductor process comprises the following steps:
step S1, heating a wafer carrier to a set temperature;
step S2, the wafer is transmitted to a wafer carrier;
step S3, continuously measuring the temperature change of the wafer carrier;
step S4, if the temperature of the wafer carrier is obviously reduced, the wafer is heated; if the temperature of the wafer carrier does not decrease significantly, it indicates that the wafer is not heated.
2. The method of claim 1, wherein the wafer carrier is an electrostatic chuck.
3. The method of claim 1, wherein the heating module is disposed on a backside of the wafer carrier, and the backside of the heating module is further provided with a thermal insulation layer and a cooling module in sequence.
4. The method of claim 1, wherein the semiconductor device is a high temperature ion implanter comprising a vacuum process module, a vacuum transfer module, a load lock module, and a device front end module connected in sequence; the vacuum transmission module is also connected with a preheating module, and the wafer bearing and heating mechanism is positioned on the preheating module.
5. The method of claim 1, wherein the semiconductor device is a high temperature ion implanter comprising a vacuum process module, a vacuum transfer module, a load lock module, and a device front end module connected in sequence; the vacuum process module is provided with a scanning robot, and the wafer bearing and heating mechanism is positioned on the scanning robot.
6. The method according to any one of claims 1-5, wherein in step S1, after the wafer carrier is heated to the set temperature, the heating power of the heating module is kept constant, so that the wafer carrier is maintained at the set temperature;
in the step S2 and the step S3, the heating power of the heating module is still unchanged; under normal conditions, the wafer carrier outputs heat to the wafer while being continuously heated by the heating module, and the heat transfer speed between the wafer and the wafer carrier is faster than the heat transfer speed between the wafer carrier and the heating module, resulting in a decrease in temperature of the wafer carrier after contacting the wafer.
7. The method according to any of claims 1-5, wherein in step S3, the temperature of the wafer carrier is measured continuously at least from a first time; wherein the first moment is at the same time or before the wafer is placed on the wafer carrier, or at the same time or before the wafer is in close contact with the wafer carrier.
8. The method according to any one of claims 1 to 5, wherein in step S4, if the temperature is reduced by 0.5 ℃ to 10 ℃, it is determined that the temperature is significantly reduced; if the temperature is not lowered or the value of the lowering is less than 0.5 ℃, it is determined that the temperature is not lowered significantly.
9. The method of any one of claims 1-5, further comprising obtaining a correspondence between a wafer temperature and a wafer carrier temperature through theoretical calculation or actual testing in advance; further, in step S4, the temperature of the wafer at any time is correspondingly obtained according to the temperature of the wafer carrier measured at any time.
10. The method of any of claims 1-5, further comprising estimating the temperature of the wafer by:
wafer from room temperature T 0 Rising to a set temperature T 1 The amount of heat required is δq,
δQ＝m w C w (T 1 -T 0 )，
wherein m is w C is the mass of the wafer w Is the specific heat capacity of the wafer;
these heat δq are derived from the electrostatic chuck, the temperature of which drops δt e ，
Wherein C is e Specific heat capacity, m, of electrostatic chuck e Is the mass of the electrostatic chuck;
accordingly, when the temperature change of the electrostatic chuck is measured to be δT e At this time, the temperature increase value δT of the wafer can be calculated w ，
The wafer heating process is a continuous heat exchange process, so the final wafer temperature is
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