CN117521704A - Dual-mode transparent RFID tag and preparation method thereof - Google Patents
Dual-mode transparent RFID tag and preparation method thereof Download PDFInfo
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 30
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
- G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
- G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
- G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
- G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
- G06K19/0772—Physical layout of the record carrier
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
- G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
- G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
- G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
- G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
- G06K19/07745—Mounting details of integrated circuit chips
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Theoretical Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Details Of Aerials (AREA)
Abstract
The invention discloses a dual-mode transparent RFID tag and a preparation method thereof, belonging to the field of radio frequency identification, wherein the dual-mode transparent RFID tag comprises an RFID chip and a dual-mode antenna, the RFID chip is prepared on transparent glass, the RFID chip and the dual-mode antenna are fixed on the surface of the transparent glass, the preparation method of the small-size transparent RFID tag comprises the steps of firstly preparing a substrate, namely cleaning the transparent corning glass, sputtering a source drain electrode on the glass through photoetching and sputtering, and then depositing a conductive active layer ZnO and a gate oxide layer Al through an atomic layer deposition system ALD 2 O 3 And then sputtering a grid electrode by using a magnetron sputtering device, then selectively injecting deuterium ions by using PECVD to generate a circuit structure, and finally sputtering aluminum or silver for manufacturing an antenna, so that the whole dual-mode transparent RFID label is prepared. The dual-mode transparent RFID tag has low cost and wider and complex application scene.
Description
Technical Field
The invention relates to the technical field of RFID (radio frequency identification devices), in particular to a dual-mode transparent RFID label and a preparation method thereof.
Background
Radio Frequency Identification (RFID) is a non-contact wireless identification technology widely applied nowadays, and the wireless identification function of the RFID has a plurality of applications in a plurality of fields such as logistics, traffic, anti-counterfeiting and the like. In an RFID identification system, information to be identified and transferred is stored in an electronic tag, and a reader is required to send a wireless signal with a specific frequency to the tag, so that energy is provided for the tag, information interaction is performed, and information in the tag is read.
The RFID can be divided into four types according to frequency division, namely low frequency, high frequency, ultrahigh frequency and microwave, and corresponding representative frequencies are respectively: low frequency below 135KHz, high frequency 13.56MHz, ultra-high frequency 860M-960MHz, microwave 2.4G. The method is divided into two modes, namely an inductive coupling mode and a backscattering coupling mode, wherein the communication distance of the inductive coupling mode is relatively short, generally below 1m, the low frequency and the high frequency generally work in the inductive coupling mode, the communication distance of the backscattering coupling mode is 4 m-10 m, and the ultrahigh frequency generally work in the backscattering coupling mode.
The high-frequency RFID of 13.56M is widely applied to the market, the technology and production are relatively more mature, but with the development of the production technology, the advantages of the ultra-high-frequency RFID are more and more obvious, such as lower antenna preparation cost, relatively more distant transmission distance and the like; the use of both high and ultra-high frequencies is also becoming an urgent need in the era, and the development of dual mode tag systems for high and ultra-high frequency RFID is necessary. In addition, the RFID tag on the market is commonly prepared from copper foil and aluminum foil, and the chip circuit part is made of traditional silicon-based materials, is opaque and is easy to completely take off the tag and transfer the tag to other articles, so that the anti-counterfeiting function of the tag is lost.
Disclosure of Invention
The invention aims to provide a dual-mode transparent RFID tag for the field of radio frequency identification, which can be used for designing RFID antennas and RFID chips in different frequency bands, and the RFID antennas and the RFID chips in the two frequency bands are compatible and do not influence each other and can work, so that the application range of one RFID is enlarged, the dual-mode transparent RFID tag can be used for high frequency and ultrahigh frequency, and the manufacturing cost is saved. In addition, the chip is prepared by adopting a zinc oxide process, the material is transparent, the cost is low, and the cost of the RFID is further saved. The transparent dual-mode RFID solves the problem of single application in the existing RFID, and brings more updated complex application scenes.
The invention aims to solve the technical problem of providing a transparent dual-mode RFID passive tag which supports high-frequency and ultrahigh-frequency communication, has a simple structure, is low in cost, is transparent and attractive and is wider in application.
In order to achieve the above purpose, the invention adopts the following technical scheme:
the dual-mode transparent RFID tag comprises a high-frequency RFID chip, an ultrahigh-frequency RFID chip and an RFID dual-mode antenna, wherein the RFID dual-mode antenna comprises a high-frequency antenna and an ultrahigh-frequency antenna which are respectively connected with the high-frequency RFID chip and the ultrahigh-frequency RFID chip. The invention specially designs a dual-mode antenna for wireless radio frequency identification, which specifically comprises the size and shape designs of a high-frequency antenna and an ultrahigh-frequency antenna, and the simulation and design of matching circuits of the two antennas, wherein the high-frequency antenna is mainly a surrounding closed-loop inductive coupling antenna with the frequency of 13.56MHz, the ultrahigh-frequency antenna is a bent dipole back-scattering coupling antenna with the frequency of 925MHz, and the two ends of the ultrahigh-frequency antenna need larger energy storage capacitance (more than 2 pF); the area required by the high-frequency antenna is larger than that of the ultrahigh frequency, the ultrahigh frequency antenna can be arranged in the high-frequency antenna, and then the high-frequency antenna is connected with the high-frequency RFID chip by bridging the ultrahigh frequency antenna; and a radio frequency switch is not needed between the high-frequency RFID chip and the ultrahigh-frequency RFID chip, only radio frequency signals in the space are received, corresponding RFID tags are automatically started according to the signal frequency, information stored in the tags is read, and the information is transmitted.
Further, the RFID dual-mode antenna is specifically composed of an insulating transparent substrate and an antenna radiation structure, wherein the antenna radiation structure is arranged on the surface of the insulating transparent substrate; the antenna radiation structure specifically comprises a high-frequency antenna radiation structure and an ultrahigh-frequency antenna radiation structure, wherein the high-frequency antenna radiation structure is in a rectangular ring shape and adopts a multi-ring surrounding mode; the ultrahigh frequency antenna radiation structure is of a bent dipole type, and a feed loop is arranged in the middle and used for supplying power to the ultrahigh frequency RFID chip.
Still further, the number of turns of the high-frequency antenna is six, and the high-frequency antenna needs to be connected with the high-frequency RFID chip in a bridging way through an antenna port; the ultrahigh frequency antenna is in a bent dipole shape, the inside of the ultrahigh frequency antenna is connected with a feed ring, and the port of the feed ring is connected with an internal ultrahigh frequency RFID chip to supply power to the ultrahigh frequency RFID chip.
Still further, the antenna radiation structure is made of aluminum or silver, and has a thickness of 200nm, and a resistance that is too large if it is lower than 200nm, so that energy loss is large, and a preparation cost that is higher than 200nm, and is not suitable for ohmic contact with an RFID chip, is high.
Still further, the high frequency/ultrahigh frequency RFID chip is transparent and invisible, and the chip material is zinc oxide ZnO, indium tin oxide ITO and aluminum oxide Al 2 O 3 These materials having high light transmittance. The high-frequency/ultrahigh-frequency RFID chip comprises a conductive layer and a substrate, wherein the conductive layer is directly attached to the substrate by using sputtering equipment and atomic layer deposition equipment in the preparation process, so that the adhesiveness is high, and the conductive layer is basically prevented from falling off; the conducting layer is used as a circuit of the RFID chip and comprises a digital circuit and an analog circuit, and is connected with the antenna; the substrate is transparent insulating substrate and may be made of PET, PE, TPU, PVC or glass, and the glass is transparent>90%. The chip is arranged on the transparent insulating substrate, and the light transmittance of the whole tag chip>85％。
Still further, in the conductive layer of the RFID tag chip: the thickness of the ZnO of the active layer is 20nm, if the thickness of the ZnO film is continuously reduced, the resistivity of the ZnO film is increased, so that the contact resistance with the electrode ITO is increased; and a thicker ZnO film may have more surface defects and larger roughness in the growth process, so as to influence the field effect mobility of the device, thereby influencing the realization of circuit functions, and the 20nm ZnO transparency is better. The conditions of the active layer preparation process are loose, and high-temperature conditions of a silicon-based process are not needed.
The electrode in the conducting layer of the high-frequency/ultrahigh-frequency RFID chip is made of an ITO material and is divided into a grid electrode and a source electrode and a drain electrode, the thickness of the grid electrode ITO is 100nm, and the thickness of the source electrode and the drain electrode ITO is 200nm.
A method for preparing a dual-mode transparent RFID tag, comprising the steps of:
s1, preparing a substrate: ultrasonic cleaning a corning 4-inch glass sheet in an acetone solution for 3 minutes, removing organic residues (such as photoresist and the like) on the glass sheet, then ultrasonic cleaning in an isopropanol solution for 1 minute, dissolving acetone remained on the glass sheet in the previous step, flushing the residual isopropanol solution on the front and the back of the glass sheet with deionized water, thoroughly drying the water by a nitrogen gun, and heating the glass sheet on a heating plate at 105 ℃ for 4 minutes to finish the pre-cleaning work of the glass sheet.
S2, preparing a source electrode and a drain electrode: and (3) mounting the ITO target in an ultrahigh vacuum composite sputtering coating system, placing a glass sheet, performing sputtering with a bias voltage of 75V and a current of 0.005A for 2 minutes under a high vacuum environment of 0.7Pa, then performing sputtering with a current of 0.4A being increased for 12 minutes, depositing a layer of ITO with a thickness of 200nm on the glass sheet, and performing annealing at 200 ℃ for 5 minutes under a nitrogen environment after sputtering.
S3, preparing an active layer and a protective layer: deposition of 20nm ZnO film by ALD apparatus at 200 ℃ required 125 cycles of deposition using a precursor of diethyl zinc (DEZ) and water with a mass ratio of Zn to water of 0.15:0.4. then, thermal annealing is carried out at 400 ℃ for 5 minutes in an oxygen atmosphere to fill oxygen vacancies and remove hydrogen, so that the resistance of the ZnO active layer is improved, otherwise, the resistance of the ZnO active layer is too small to be used as the semiconductor active layer. After which a layer of 10nm Al is also deposited 2 O 3 Protective layer to protect ZnO active layer, also using ALD apparatus, 125 cycles at 200 ℃, using Trimethylaluminum (TMA) and water as precursors with a molar ratio of Al to water of 0.2:0.3, and finally thermally annealing at 200 ℃ for 30 seconds in an oxygen atmosphere.
S4, preparing a gate oxide layer: the glass sheet was transferred to an atomic layer deposition apparatus ALD to deposit a 20nm thin film of aluminum oxide at a temperature of 200 ℃. Then, AR-P5350 photoresist is spin-coated on the glass sheet, pre-baked for 4mins at 105 ℃, then exposed and developed by using a through hole mask, and post-baked for 5mins at 115 ℃ to form a film. Alumina is etched using a 1% hf solution, then the photoresist is cleaned off and baked. The via is mainly used for the interconnection of the source and drain electrodes with the top gate electrode.
S5，Preparation of a grid: deposition was also carried out using ALD apparatus at an operating temperature of 200℃and a thickness of 20nm of Al 2 O 3 The gate oxide layer requires 250 run cycles followed by a 200 c thermal anneal for 30 seconds in an oxygen atmosphere.
Thus, the preparation of the enhanced ZnO TFTs is completed.
S6, preparation of a depletion type load inverter: the plasma is mainly generated by adopting PECVD equipment and is selectively injected into ZnO TFTs at room temperature, deuterium ions can easily penetrate through the gate oxide layer in the region without the photoresist mask and finally reach the active layer, so that the carrier concentration in the active layer is increased. In the region with the photoresist mask, deuterium ions hardly penetrate through photoresist with the thickness of 5-10 mu m, so that the selective injection of deuterium ions in a 4-inch glass sheet is finally realized, and a complex circuit with a depletion type load is constructed.
S7, preparing an RFID dual-mode antenna: and (3) spin coating AR-P5350 photoresist on the glass sheet in the step (S6), pre-baking at 105 ℃ for 4mins, then performing exposure development by using a dual-mode antenna mask, and transferring to an ultrahigh vacuum magnetron sputtering coating system to sputter a 200nm aluminum film, wherein the power is 100W, and the air pressure is 1Pa. After the sputtering is finished, the glass sheet is reversely buckled on a stripping frame to be stripped by acetone, and is cleaned by isopropanol and deionized water, and is dried by a hot plate. All steps are completed, and the circuit is tested.
Compared with the prior art, the invention has the beneficial effects that:
by adopting a combination mode of the dual-mode antenna and the RFID chip, different RFID chips and corresponding antennas can be used in different scenes; the combination mode gives the high-frequency antenna sufficient surrounding space, and on the premise of no mutual influence, the bent dipole ultrahigh-frequency antenna is arranged in the high-frequency antenna, so that the combination operation of the dual-mode antenna is realized; because the high-frequency and ultra-high-frequency antennas are arranged on the same substrate, the space is saved, and the requirements of multi-scene RFID miniaturized application are met; in addition, the chip part of the dual-mode RFID is prepared by adopting a zinc oxide process, so that the preparation condition is loose, the optical transparency is realized, the cost is low, and the production cost of the whole dual-mode RFID is further saved. The transparent dual-mode RFID tag has updated and more complex realistic application scenes, is not only suitable for high-frequency and ultrahigh-frequency scenes, but also is made of special materials and processes, has high transparency, attractive appearance and does not shade commodities, and solves the problem that the traditional silicon-based RFID tag is easy to tear and remove.
Drawings
FIG. 1 is a schematic diagram of the structure of a transparent RFID tag of the dual mode antenna of the present invention;
FIG. 2 is an enlarged overall schematic of the circuitry of the transparent RFID tag of the dual mode antenna of the present invention;
fig. 3 is a schematic plan view of the high frequency antenna structure of fig. 2;
fig. 4 is a schematic plan view of the uhf antenna structure of fig. 2.
Detailed Description
For the purpose of facilitating a better understanding of the technical solution of the present invention, reference will now be made to the accompanying drawings and to the detailed description, which are given by way of illustration only and not to limit the scope of the invention.
As shown in fig. 1, a dual-mode transparent RFID tag includes an RFID high-frequency chip 1 and an ultra-high-frequency chip 2; the high-frequency chip 1 is connected with the high-frequency antenna 3, the ultrahigh-frequency chip 2 is connected with the ultrahigh-frequency antenna 4, the high-frequency antenna 3 is an inductive coupling coil closed-loop antenna and works at 13.56MHz, and the ultrahigh-frequency antenna 4 is a bent dipole antenna and works at 925MHz; the RFID high-frequency chip 1 is directly connected with the high-frequency antenna 3, a matching circuit is built in for matching the high-frequency antenna 3 with the high-frequency chip 1 in a circuit mode, so that the high-frequency chip 1 can obtain maximum energy, the energy is emitted by the reader 5, the frequency is 13.56MHz, the high-frequency chip 1 supplies power to an internal circuit by utilizing the energy, and finally information stored in the high-frequency chip is emitted to the reader 5 through the high-frequency antenna 3; the same applies to the uhf chip 2 and uhf antenna 4, but the signal emitted by the reader 6 is 925 MHz.
As shown in fig. 2, an implementation example of dual-mode RFID includes a high-frequency chip 1, an ultrahigh-frequency chip 2, a high-frequency antenna 3, and an ultrahigh-frequency antenna 4, where ports of the high-frequency antenna 3 are connected with two ports of the high-frequency chip 1, and the connection needs to be connected across the antenna, and a part of parasitic capacitance will be generated; the ultrahigh frequency antenna 4 is arranged in the ultrahigh frequency antenna 3, the ultrahigh frequency antenna 4 is a bent dipole antenna, two energy storage capacitors are arranged at two ends of the bent dipole antenna, namely an energy storage capacitor 8 and an energy storage capacitor 9, and are used for storing energy emitted by the ultrahigh frequency reader and supplying power to the ultrahigh frequency chip 2, the ultrahigh frequency antenna 4 supplies power to the ultrahigh frequency chip 2 through the feed ring 7, and the feed ring 7 is connected with the ultrahigh frequency antenna 4 and a port of the ultrahigh frequency chip 2.
As shown in fig. 3, a plan view of a high-frequency antenna structure is shown, which comprises six circles of antenna segments, and ports 301 and 302, each of which is connected by a round angle, because the antenna is not friendly to high frequency at right angles, the width L1 of the antenna is 3cm, the height L2 is 1.3cm, the line width is 0.1mm, the interval between each circle is 0.1mm, the ports 301 and 302 are directly connected with the input of the high-frequency chip 1, and are used for receiving 13.56M high-frequency signals in space to the high-frequency chip 1 and transmitting information stored in the high-frequency chip 1.
As shown in fig. 4, the plane schematic diagram of the ultra-high frequency antenna structure includes a port one 401, a port 402, a capacitor 403, a capacitor 404, a dipole arm 405, a dipole arm 406, and a feed loop 7, where the width L1 of the antenna is 2.6cm, the height L2 is 0.9cm, the line width is 0.22mm, the space between each section of bent antenna is 0.22mm, and the dimension can be just built in the high frequency antenna 2, so that not only the manufacturing cost is saved, but also the space during use is saved. The capacitors 403 and 404 are used for storing the received energy, the feed loop 7 is directly connected to the uhf chip 2 for supplying power to the uhf chip 2, and the ports 401 and 402 are connected to the rectifying circuit and the modulating circuit of the uhf chip 2 for receiving and transmitting signals.
Claims (6)
1. The dual-mode transparent RFID tag is characterized by comprising a high-frequency RFID chip, an ultrahigh-frequency RFID chip and an RFID dual-mode antenna, wherein the RFID dual-mode antenna comprises a high-frequency antenna and an ultrahigh-frequency antenna, the high-frequency RFID chip is connected with the high-frequency antenna, and the ultrahigh-frequency RFID chip is connected with the ultrahigh-frequency antenna; the high-frequency antenna is an inductive coupling winding closed-loop antenna and works at 13.56MHz; the ultrahigh frequency antenna is a bent dipole antenna and works at 925MHz; the high-frequency/ultrahigh-frequency RFID chip is internally provided with a matching circuit, and is used for carrying out circuit matching on the high-frequency/ultrahigh-frequency antenna and the high-frequency/ultrahigh-frequency RFID chip, so that the high-frequency/ultrahigh-frequency RFID chip obtains the energy emitted by the high-frequency/ultrahigh-frequency reader, the high-frequency/ultrahigh-frequency RFID chip supplies power to the internal circuit by utilizing the obtained energy, and finally, the information stored in the high-frequency/ultrahigh-frequency RFID chip is emitted to the high-frequency/ultrahigh-frequency reader through the high-frequency/ultrahigh-frequency antenna and is emitted by the high-frequency/ultrahigh-frequency reader.
2. A dual mode transparent RFID tag according to claim 1, wherein the ultra high frequency antenna is located inside the high frequency antenna.
3. The dual-mode transparent RFID tag according to claim 1, wherein the RFID dual-mode antenna is specifically composed of an insulating transparent substrate and an antenna radiation structure, and the antenna radiation structure is arranged on the surface of the insulating transparent substrate; the antenna radiation structure comprises a high-frequency antenna radiation structure and an ultrahigh-frequency antenna radiation structure; the high-frequency antenna radiation structure is rectangular and is arranged in a multi-circle surrounding mode; the ultrahigh frequency antenna radiation structure is of a bent dipole type, and a feed loop is arranged in the middle and used for supplying power to the ultrahigh frequency RFID chip.
4. A dual mode transparent RFID tag according to claim 3, wherein the antenna radiating structure is made of aluminum or silver and has a thickness of 200nm.
5. The dual-mode transparent RFID tag of claim 1, wherein the high frequency/ultra high frequency RFID chip is transparent and invisible, the high frequency/ultra high frequency RFID chip comprises a conductive layer and a substrate, the conductive layer is connected with an antenna, and the substrate is a transparent insulating substrate; the high-frequency/ultrahigh-frequency RFID chip and the RFID dual-mode antenna are positioned on the same transparent insulating substrate; the conductive layer comprises: active layer materialZnO is used as the material, and the thickness is 20nm; the protective layer is made of Al 2 O 3 The thickness is 10nm; the electrode material is ITO, the electrode is divided into a grid electrode and a source electrode and a drain electrode, the thickness of the grid electrode ITO is 100nm, and the thickness of the source electrode ITO and the drain electrode ITO is 200nm; the gate oxide layer is made of Al 2 O 3 The thickness is 20nm; the gate electrode material is Al 2 O 3 The thickness was 20nm.
6. A method of manufacturing a dual mode transparent RFID tag according to any one of claims 1-5, comprising the steps of:
s1, preparing a substrate: ultrasonically cleaning a glass sheet in an acetone solution for 3 minutes, removing organic residues on the glass sheet, then ultrasonically cleaning the glass sheet in an isopropanol solution for 1 minute, dissolving acetone remained on the glass sheet, flushing the isopropanol solution remained on the front and back surfaces of the glass sheet with deionized water, thoroughly drying moisture by a nitrogen gun, and heating the glass sheet at 105 ℃ for 4 minutes to finish the pre-cleaning work of the glass sheet;
s2, preparing a source electrode and a drain electrode: the ITO target is assembled in an ultrahigh vacuum composite sputtering coating system, a glass sheet is placed, the sputtering is carried out for 2 minutes under the conditions of high vacuum environment of 0.7Pa, bias voltage of 75V and current of 0.005A, then the sputtering is carried out for 12 minutes by adjusting the current to 0.4A, a layer of ITO with the thickness of 200nm is deposited on the glass sheet, and annealing is carried out for 5 minutes at 200 ℃ in a nitrogen environment after sputtering;
s3, preparing an active layer and a protective layer: the 20nm ZnO film is deposited at 200 ℃ by an Atomic Layer Deposition (ALD) equipment, the thickness needs 125 cycles of deposition, the used precursors are diethyl zinc and water, and the mass ratio of Zn to water is 0.15:0.4; then carrying out thermal annealing at 400 ℃ for 5 minutes in an oxygen atmosphere to fill oxygen vacancies and remove hydrogen, so as to improve the resistance of the ZnO active layer; then deposit a layer of 10nm Al at 200 ℃ using ALD apparatus 2 O 3 The protective layer is used for protecting the ZnO active layer, the thickness of the protective layer needs 125 periods, the precursor is trimethylaluminum and water, and the molar ratio of Al to water is 0.2:0.3, finally, carrying out thermal annealing at 200 ℃ for 30 seconds in an oxygen atmosphere;
s4, preparing a gate oxide layer: transferring the glass sheet into ALD apparatus, depositing 20nm of Al at a temperature of 200deg.C 2 O 3 A film; spin coating AR-P5350 photoresist on a glass sheet, pre-baking for 4mins at 105 ℃, then exposing and developing by using a through hole mask, and post-baking for 5mins at 115 ℃ to form a film; etching Al with 1% HF solution 2 O 3 Then cleaning to remove the photoresist and drying;
s5, preparing a grid electrode: deposition of Al using ALD apparatus 2 O 3 At 200 ℃ for depositing Al with 20nm thickness 2 O 3 The gate oxide layer requires 250 operation cycles, and is then subjected to thermal annealing at 200 ℃ for 30 seconds in an oxygen atmosphere;
thus, the preparation of the enhanced ZnO TFTs is completed;
s6, preparation of a depletion type load inverter: plasma is generated by adopting PECVD equipment, znO TFTs are selectively injected at room temperature, and a complex circuit of a depletion type load is constructed; in the region without the photoresist mask, deuterium ions penetrate through the gate oxide layer and then reach the active layer, so that the carrier concentration in the active layer is increased; in the region with the photoresist mask, deuterium ions cannot penetrate through the photoresist with the thickness of 5-10 mu m, and finally selective injection of deuterium ions in the glass sheet is realized;
s7, preparing an RFID dual-mode antenna: continuously spin-coating AR-P5350 photoresist on the glass sheet in the step S6, pre-baking for 4mins at 105 ℃, then performing exposure and development by using a dual-mode antenna mask, and transferring to an ultrahigh vacuum magnetron sputtering coating system to sputter a 200nm aluminum film, wherein the power is 100W, and the air pressure is 1Pa; and after sputtering, reversely buckling the glass sheet on a stripping frame, stripping by using acetone, cleaning by using isopropanol and deionized water, and drying to obtain the dual-mode transparent RFID tag.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202311250876.7A CN117521704A (en) | 2023-09-26 | 2023-09-26 | Dual-mode transparent RFID tag and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311250876.7A CN117521704A (en) | 2023-09-26 | 2023-09-26 | Dual-mode transparent RFID tag and preparation method thereof |
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| CN117521704A true CN117521704A (en) | 2024-02-06 |
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| CN202311250876.7A Pending CN117521704A (en) | 2023-09-26 | 2023-09-26 | Dual-mode transparent RFID tag and preparation method thereof |
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