CN117490904A - Intelligent pressure sensor and chip manufacturing process thereof - Google Patents
Intelligent pressure sensor and chip manufacturing process thereof Download PDFInfo
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- CN117490904A CN117490904A CN202311317195.8A CN202311317195A CN117490904A CN 117490904 A CN117490904 A CN 117490904A CN 202311317195 A CN202311317195 A CN 202311317195A CN 117490904 A CN117490904 A CN 117490904A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000012528 membrane Substances 0.000 claims abstract description 30
- 239000002184 metal Substances 0.000 claims description 55
- 239000000758 substrate Substances 0.000 claims description 41
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 33
- 229910052710 silicon Inorganic materials 0.000 claims description 30
- 239000010703 silicon Substances 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 26
- 238000005530 etching Methods 0.000 claims description 12
- 230000009977 dual effect Effects 0.000 claims description 10
- 238000004806 packaging method and process Methods 0.000 claims description 7
- 238000001259 photo etching Methods 0.000 claims description 6
- 239000005388 borosilicate glass Substances 0.000 claims description 4
- 238000004891 communication Methods 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 abstract description 8
- 238000005259 measurement Methods 0.000 abstract description 7
- 239000000725 suspension Substances 0.000 abstract description 7
- 238000012360 testing method Methods 0.000 abstract description 7
- 238000013461 design Methods 0.000 abstract description 6
- 238000006073 displacement reaction Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000013473 artificial intelligence Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 210000000697 sensory organ Anatomy 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
- G01L9/06—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/0061—Electrical connection means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
- H10N30/082—Shaping or machining of piezoelectric or electrostrictive bodies by etching, e.g. lithography
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
- H10N30/302—Sensors
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
The invention discloses an intelligent pressure sensor and a chip manufacturing process thereof, which construct a double-diaphragm chip structure, and the size of the diaphragm structure can be respectively controlled to adapt to different measuring ranges; the first sensitive diaphragm adopts a beam structure and combines with an FPGA control circuit, so that the two sensitive diaphragms can be independently designed in structural size, when the pressure to be detected is smaller or larger, the first pressure signal and the second pressure signal are respectively extracted, the using range of the intelligent pressure sensor chip is improved, and the testing sensitivity and the testing precision are ensured; the thickness of the sensitive membrane is controlled to realize the measurement of micro pressure, and the structural design of the pressure conducting beam and the pressure sensitive beam is adopted, so that the pressure conducting beam, the pressure sensitive beam and the pressure sensitive membrane form a suspension structure, and the suspension structure can reduce the longitudinal displacement of the pressure sensitive beam under the condition of being stressed, improve the stress concentration of the pressure sensitive beam, ensure the nonlinear performance and improve the sensitivity of the sensor.
Description
Technical Field
The invention relates to the technical field of pressure sensors and chip manufacturing thereof, in particular to an intelligent pressure sensor and a chip manufacturing process thereof.
Background
In the age of the rapid development of informatization nowadays, sensor technology has received a great deal of attention. The sensor is also called as a data parent, and is an acceptance window of new generation information technologies such as the Internet of things, big data, artificial intelligence, intelligent manufacturing and the like. Currently, sensor technologies represented by sound, light, force, magnetism, gas, temperature and humidity, living things, radio frequency, and the like have been widely used in mobile terminals such as airplanes, high-speed rails, automobiles, robots, and the like, serving as "electronic five sense organs" of them. At the beginning of everything interconnection, intelligent products and equipment form a huge demand for sensors. With the progress of the industrial age, the requirements of people on the performance of the sensor are higher and higher, and the use environment is also more and more complex, such as the use under extreme climate conditions, and the silicon piezoresistive pressure sensor is widely applied to various fields of industry, meteorological measurement, consumer electronics and the like nowadays because the silicon piezoresistive pressure sensor has the characteristics of high frequency response, good stability, small volume and high precision. According to the structural size design of the sensor chip, the silicon piezoresistive pressure sensor is mainly divided into micro-pressure, low-pressure, medium-pressure and high-pressure measuring range, namely, the sensor chip can only be applied to a certain measuring range condition, otherwise, the sensitivity and nonlinear performance requirements of the sensor cannot be met.
Disclosure of Invention
Aiming at the defects in the prior art, the intelligent pressure sensor and the chip manufacturing process thereof provided by the invention solve the problems that the sensor chip in the prior art can only be applied to a certain range condition, otherwise, the sensitivity and the nonlinear performance requirements of the sensor cannot be met, and the measurement accuracy is low.
In order to achieve the aim of the invention, the invention adopts the following technical scheme:
an intelligent pressure sensor is provided, which comprises an intelligent pressure sensor circuit board and a packaging shell; the intelligent pressure sensor circuit board is fixed in the packaging shell;
the intelligent pressure sensor circuit board comprises a double-diaphragm pressure sensor chip, a printed circuit board, an FPGA device, a first metal bonding pad and an external pin; the double-diaphragm type pressure sensor chip and the FPGA device are respectively fixed on two sides of the printed circuit board; the first metal bonding pad is positioned on the printed circuit board and is connected with the double-diaphragm pressure sensor chip through a metal lead; the external pins are arranged on the outer side of the printed circuit board and connected with the printed circuit board, and penetrate through the packaging shell to be connected with an external circuit.
Further, the dual diaphragm pressure sensor chip includes a first sensitive diaphragm and a second sensitive diaphragm; the first sensitive diaphragm and the second sensitive diaphragm are integrated on the double-diaphragm type pressure sensor chip, and a first back cavity and a second back cavity are formed respectively.
Further, the printed circuit board is in electrical communication with the dual diaphragm pressure sensor chip via a wire bonding process.
Further, the first sensitive membrane adopts four beam structures, and the second sensitive membrane adopts a flat membrane structure.
Further, each beam structure comprises a support column, a pressure conducting beam and a pressure sensitive beam, and the four beam structures are rotationally symmetrical on the surface of the first sensitive membrane and form a spiral structure; the support column is fixed at the centrifugal position of the first sensitive membrane; the middle end of the pressure conductive beam is fixedly connected with the pressure sensitive beam, the lower end of the pressure conductive beam is provided with a bump, and the bump is fixedly connected with the support column.
Further, the thickness h of the pressure conductive beam is greater than the width a of the pressure conductive beam.
Further, a first circuit and four second metal pads are arranged on a spiral structure formed by the four beam structures; the first circuit comprises four first piezoresistors; the four first piezoresistors are a resistor R1, a resistor R2, a resistor R3 and a resistor R4 respectively and are arranged on each pressure-sensitive beam respectively; the output ends of the four first piezoresistors are respectively connected with one ends of the four second metal bonding pads;
the second sensitive membrane is provided with a second circuit and four third metal bonding pads; the second circuit comprises four second piezoresistors; the four second piezoresistors are a resistor R5, a resistor R6, a resistor R7 and a resistor R8 respectively, and are respectively arranged in the middle of each side of the second sensitive diaphragm; the output ends of the four second piezoresistors are respectively connected with one ends of the four third metal bonding pads; the other ends of the four second metal bonding pads and the four third metal bonding pads are respectively connected with the first metal bonding pads.
The chip manufacturing process for the intelligent pressure sensor is characterized in that: the method comprises the following steps:
s1, selecting a first SOI substrate with a doping type of N type;
s2, etching the top silicon of the first SOI substrate by adopting a photoetching process to form support columns;
s3, selecting a second SOI substrate with a doping type of N type;
s4, bonding the first SOI substrate and the second SOI substrate into a whole through an anode bonding process, and etching to remove a bottom silicon part of the second SOI substrate to obtain a bonded silicon substrate;
s5, etching the upper surface of the bonded silicon substrate by adopting a photoetching process to form a pressure conductive beam and a pressure sensitive beam;
s6, forming a first piezoresistor and a second piezoresistor on the surface of the bonded silicon substrate by adopting a doping process;
s7, forming a metal lead and a second metal bonding pad and a third metal bonding pad by adopting a magnetron sputtering process; the second metal bonding pad and the third metal bonding pad are respectively connected with the corresponding first piezoresistor and the second piezoresistor through metal leads;
s8, respectively etching the back surface of the silicon substrate by adopting a wet etching process to form a first back cavity and a second back cavity;
and S9, bonding the borosilicate glass with a substrate through an anodic bonding process to form the double-membrane pressure sensor chip.
Further, the thickness of the top silicon layer of the first SOI substrate is 2-5 mu m, the thickness of the bottom silicon layer is 350-450 mu m, and the thickness of the middle oxide layer is 1-3 mu m;
the thickness of the top silicon layer of the second SOI substrate is 6-12 mu m, the thickness of the bottom silicon layer is 350-450 mu m, and the thickness of the middle oxide layer is 1-3 mu m;
the doping concentration used in step S6 is 1×10 15 /cm 3 ～5×10 18 /cm 3 。
The beneficial effects of the invention are as follows: the intelligent pressure sensor constructs a double-diaphragm chip structure, and can be adapted to different measuring ranges by respectively controlling the structural size of the diaphragms; the first sensitive diaphragm adopts a beam structure and combines with an FPGA control circuit, so that the structural size design of the first sensitive diaphragm and the second sensitive diaphragm can be realized independently, when the pressure to be measured is smaller, a first pressure signal can be extracted, and when the pressure to be measured is larger, a second pressure signal can be extracted, the use range of the intelligent pressure sensor chip is improved, and the test sensitivity and the test precision are ensured; the thickness of the sensitive diaphragm is controlled to realize the measurement of micro pressure, and the structural design of the pressure conductive beam and the pressure sensitive beam is adopted, so that the pressure conductive beam, the pressure sensitive beam and the pressure sensitive diaphragm form a suspension structure, the suspension structure can reduce the longitudinal displacement of the pressure sensitive beam under the condition of being stressed, improve the stress concentration of the pressure sensitive beam, ensure the nonlinear performance and improve the sensitivity of the sensor, and realize high-precision measurement.
Drawings
FIG. 1 is a schematic diagram of an intelligent pressure sensor of the present invention;
FIG. 2 is a schematic diagram of a circuit board of the intelligent pressure sensor of the present invention;
FIG. 3 is a schematic diagram of a dual diaphragm pressure sensor chip of the present invention;
FIG. 4 is a schematic cross-sectional view of a dual diaphragm pressure sensor chip of the present invention;
FIG. 5 is a partial schematic view of a beam structure of the present invention;
FIG. 6 is a schematic diagram of steps S1, S2 of the present invention;
FIG. 7 is a schematic diagram of steps S3, S4 of the present invention;
FIG. 8 is a schematic diagram of steps S5, S6, S7 of the present invention;
FIG. 9 is a schematic diagram of step S8 of the present invention;
FIG. 10 is a schematic diagram of step S9 of the present invention;
FIG. 11 is a simplified schematic diagram of the internal circuitry of the intelligent pressure sensor of the present invention;
wherein: 1. a dual diaphragm pressure sensor chip; 2. a first circuit; 3. a second metal pad; 4. a beam structure; 5. a first varistor; 6. a support column; 7. a first sensitive membrane; 8. a second circuit; 9. a second varistor; 10. a second sensitive membrane; 11. a third metal pad; 12. a second back cavity; 13. a first back cavity; 18. a pressure conductive beam; 19. a pressure sensitive beam; 20. a printed circuit board; 21. an FPGA device; 22. a first metal pad; 23. externally connected pins; 24. an intelligent pressure sensor circuit board; 25. a package housing; 26. an intelligent pressure sensor; 27. a first SOI substrate; 28. a second SOI substrate; 29. borosilicate glass.
Detailed Description
The following description of the embodiments of the present invention is provided to facilitate understanding of the present invention by those skilled in the art, but it should be understood that the present invention is not limited to the scope of the embodiments, and all the inventions which make use of the inventive concept are protected by the spirit and scope of the present invention as defined and defined in the appended claims to those skilled in the art.
As shown in fig. 1 and 2, a smart pressure sensor includes a smart pressure sensor circuit board 24 and a package housing 25; the intelligent pressure sensor circuit board 24 is fixed in the packaging shell 25;
the intelligent pressure sensor circuit board 24 comprises a double-diaphragm pressure sensor chip 1, a printed circuit board 20, an FPGA device 21, a first metal bonding pad 22 and an external pin 23; the double-diaphragm type pressure sensor chip 1 and the FPGA device 21 are respectively fixed on two sides of the printed circuit board 20; the first metal bonding pad 22 is positioned on the printed circuit board 20, and the first metal bonding pad 22 is connected with the double-diaphragm pressure sensor chip 1 through a metal lead; the external leads 23 are disposed on the outside of the printed circuit board 20 and connected to the printed circuit board 20, and pass through the package case 25 to be connected to an external circuit.
As shown in fig. 3 and 4, the dual-diaphragm pressure sensor chip 1 includes a first sensitive diaphragm 7 and a second sensitive diaphragm 10; the first sensitive diaphragm 7 and the second sensitive diaphragm 10 are integrated on the dual diaphragm pressure sensor chip 1 and form a first back cavity 13 and a second back cavity 12, respectively.
The printed circuit board 20 is in electrical communication with the dual diaphragm pressure sensor chip 1 through a wire bonding process.
The first sensitive membrane 7 adopts four beam structures 4, and the second sensitive membrane 10 adopts a flat membrane structure.
As shown in fig. 5, each beam structure 4 includes a support column 6, a pressure conductive beam 18 and a pressure sensitive beam 19, and the four beam structures 4 are rotationally symmetrical on the surface of the first sensitive membrane 7 and form a spiral structure; the support column 6 is fixed at the centrifugal position of the first sensitive membrane 7; the middle end of the pressure conducting beam 18 is fixedly connected with the pressure sensing beam 19, the lower end of the pressure conducting beam 18 is provided with a bump, and the bump is fixedly connected with the support column 6.
The thickness h of the pressure conductive beam 18 is greater than the width a of the pressure conductive beam 18.
The spiral structure formed by the four beam structures 4 is provided with a first circuit 2 and four second metal bonding pads 3; the first circuit 2 comprises four first piezoresistors 5; the four first piezoresistors 5 are respectively a resistor R1, a resistor R2, a resistor R3 and a resistor R4, and are respectively arranged on each pressure-sensitive beam 19; the output ends of the four first piezoresistors 5 are respectively connected with one ends of the four second metal bonding pads 3;
the second sensitive membrane 10 is provided with a second circuit 8 and four third metal pads 11; the second circuit 8 comprises four second piezoresistors 9; the four second piezoresistors 9 are a resistor R5, a resistor R6, a resistor R7 and a resistor R8 respectively, and are respectively arranged in the middle of each side of the second sensitive diaphragm 10; the output ends of the four second piezoresistors 9 are respectively connected with one ends of four third metal bonding pads 11; the other ends of the four second metal pads 3 and the four third metal pads 11 are connected to the first metal pads 22, respectively.
As shown in fig. 6, 7, 8, 9 and 10, a chip manufacturing process for an intelligent pressure sensor includes the steps of:
s1, selecting a first SOI substrate 27 with a doping type of N type;
s2, etching the top silicon of the first SOI substrate 27 by adopting a photoetching process to form support columns 6;
s3, selecting a second SOI substrate 28 with a doping type of N type;
s4, bonding the first SOI substrate 27 and the second SOI substrate 28 into a whole through an anodic bonding process, and etching to remove the bottom silicon part of the second SOI substrate 28 to obtain a bonded silicon substrate;
s5, etching the upper surface of the bonded silicon substrate by adopting a photoetching process to form a pressure conducting beam 18 and a pressure sensitive beam 19;
s6, forming a first piezoresistor 5 and a second piezoresistor 9 on the surface of the bonded silicon substrate by adopting a doping process;
s7, forming a metal lead wire, a second metal bonding pad 3 and a third metal bonding pad 11 by adopting a magnetron sputtering process; the second metal bonding pad 3 and the third metal bonding pad 11 are respectively connected with the corresponding first piezoresistor 5 and the second piezoresistor 9 through metal leads;
s8, respectively etching the back of the silicon substrate by adopting a wet etching process to form a first back cavity 13 and a second back cavity 12;
and S9, bonding the borosilicate glass 29 with a substrate through an anodic bonding process to form the double-membrane pressure sensor chip 1.
The top silicon thickness of the first SOI substrate 27 is 2-5 μm, the bottom silicon thickness is 350-450 μm, and the middle oxide layer thickness is 1-3 μm;
the second SOI substrate 28 has a top silicon thickness of 6-12 μm, a bottom silicon thickness of 350-450 μm, and a middle oxide layer thickness of 1-3 μm;
the doping concentration used in step S6 is 1×10 15 /cm 3 ～5×10 18 /cm 3 。
In one embodiment of the present invention, the intelligent pressure sensor circuit board 24 is secured to the package housing 25 using a fixing adhesive. The first metal pads 22 are uniformly distributed on the upper and lower sides of the dual diaphragm type pressure sensor chip 1. The thickness of the first sensitive membrane 7 and the second sensitive membrane 10 can be independently designed according to the measuring range. As shown in fig. 11, when the intelligent pressure sensor 26 tests the external pressure, the dual diaphragm type pressure sensor chip 1 outputs pressure signals to the FPGA device 21 through the first circuit 2 and the second circuit 8, and the FPGA device 21 can preferably output high-sensitivity signals according to the programming. The pressure conducting beam 18 and the pressure sensing beam 19 are separated from the first sensitive membrane 7 to form a suspension structure, and the fixing point of the pressure conducting beam 18 and the support column 6 is positioned at the central position of the support column 6 close to the first sensitive membrane 7. The first circuit 2 and the second circuit 8 are connected to the first metal pad 22 on the printed circuit board 20 by wire bonding to form an electrical conduction. When the pressure sensor is subjected to external air pressure, the first sensitive diaphragm 7 senses pressure and outputs a pressure signal 1 through the first circuit 2, the second sensitive diaphragm 10 senses pressure and outputs a pressure signal 2 through the second circuit 8, the pressure signal 1 and the pressure signal 2 are input into the FPGA device 21, judgment and signal processing are carried out according to an FPGA program, and a high-sensitivity and high-precision pressure signal is output.
In summary, the invention constructs a double-diaphragm chip structure which can be adapted to different measuring ranges by controlling the structural size of the diaphragm respectively; the first sensitive diaphragm 7 adopts the beam structure 4 and combines with the FPGA control circuit, so that the structural dimension design of the first sensitive diaphragm 7 and the second sensitive diaphragm 10 can be realized independently, when the pressure to be measured is smaller, the first pressure signal can be extracted, and when the pressure to be measured is larger, the second pressure signal can be extracted, the use range of the intelligent pressure sensor chip is improved, and the test sensitivity and the test precision are ensured; the thickness of the sensitive membrane is controlled to realize the measurement of micro pressure, and the structural design of the pressure conducting beam 18 and the pressure sensing beam 19 is adopted, the pressure conducting beam 18, the pressure sensing beam 19 and the pressure sensitive membrane form a suspension structure, and under the condition of being stressed, the suspension structure can reduce the longitudinal displacement of the pressure sensing beam 19, improve the stress concentration of the pressure sensing beam 19, ensure the nonlinear performance and improve the sensitivity of the sensor, thereby achieving high-precision measurement.
Claims (9)
1. An intelligent pressure sensor, its characterized in that: comprises an intelligent pressure sensor circuit board (24) and a packaging shell (25); the intelligent pressure sensor circuit board (24) is fixed in the packaging shell (25);
the intelligent pressure sensor circuit board (24) comprises a double-diaphragm pressure sensor chip (1), a printed circuit board (20), an FPGA device (21), a first metal bonding pad (22) and an external pin (23); the double-diaphragm pressure sensor chip (1) and the FPGA device (21) are respectively fixed on two sides of the printed circuit board (20); the first metal bonding pad (22) is positioned on the printed circuit board (20), and the first metal bonding pad (22) is connected with the double-diaphragm pressure sensor chip (1) through a metal lead; the external pins (23) are arranged on the outer side of the printed circuit board (20) and connected with the printed circuit board (20), and penetrate through the packaging shell (25) to be connected with an external circuit.
2. An intelligent pressure sensor according to claim 1, wherein: the double-diaphragm pressure sensor chip (1) comprises a first sensitive diaphragm (7) and a second sensitive diaphragm (10); the first sensitive diaphragm (7) and the second sensitive diaphragm (10) are integrated on the double-diaphragm pressure sensor chip (1) and form a first back cavity (13) and a second back cavity (12) respectively.
3. An intelligent pressure sensor according to claim 2, characterized in that: the printed circuit board (20) is in electrical communication with the dual diaphragm pressure sensor chip (1) by a wire bonding process.
4. An intelligent pressure sensor according to claim 2, characterized in that: the first sensitive membrane (7) adopts four beam structures (4), and the second sensitive membrane (10) adopts a flat membrane structure.
5. The intelligent pressure sensor of claim 4, wherein: each beam structure (4) comprises a support column (6), a pressure conducting beam (18) and a pressure sensitive beam (19), and the four beam structures (4) are rotationally symmetrical on the surface of the first sensitive membrane (7) and form a spiral structure; the support column (6) is fixed at the centrifugal position of the first sensitive membrane (7); the middle end of the pressure conducting beam (18) is fixedly connected with the pressure sensitive beam (19), the lower end of the pressure conducting beam (18) is provided with a bump, and the bump is fixedly connected with the support column (6).
6. The intelligent pressure sensor of claim 5, wherein: the thickness h of the pressure conducting beam (18) is greater than the width a of the pressure conducting beam (18).
7. The intelligent pressure sensor of claim 5, wherein: a first circuit (2) and four second metal bonding pads (3) are arranged on a spiral structure formed by the four beam structures (4); the first circuit (2) comprises four first piezoresistors (5); the four first piezoresistors (5) are respectively a resistor R1, a resistor R2, a resistor R3 and a resistor R4, and are respectively arranged on each pressure sensitive beam (19); the output ends of the four first piezoresistors (5) are respectively connected with one ends of the four second metal bonding pads (3);
the second sensitive membrane (10) is provided with a second circuit (8) and four third metal bonding pads (11); the second circuit (8) comprises four second piezoresistors (9); the four second piezoresistors (9) are respectively a resistor R5, a resistor R6, a resistor R7 and a resistor R8, and are respectively arranged in the middle of each side of the second sensitive diaphragm (10); the output ends of the four second piezoresistors (9) are respectively connected with one ends of four third metal bonding pads (11); the other ends of the four second metal bonding pads (3) and the four third metal bonding pads (11) are respectively connected with the first metal bonding pads (22).
8. The chip manufacturing process for the intelligent pressure sensor is characterized by comprising the following steps of: the method comprises the following steps:
s1, selecting a first SOI substrate (27) with a doping type of N type;
s2, etching the top silicon of the first SOI substrate (27) by adopting a photoetching process to form support columns (6);
s3, selecting a second SOI substrate (28) with the doping type of N type;
s4, bonding the first SOI substrate (27) and the second SOI substrate (28) into a whole through an anode bonding process, and etching to remove a bottom silicon part of the second SOI substrate (28) to obtain a bonded silicon substrate;
s5, etching the upper surface of the bonded silicon substrate by adopting a photoetching process to form a pressure conducting beam (18) and a pressure sensitive beam (19);
s6, forming a first piezoresistor (5) and a second piezoresistor (9) on the surface of the bonded silicon substrate by adopting a doping process;
s7, forming a metal lead wire, a second metal bonding pad (3) and a third metal bonding pad (11) by adopting a magnetron sputtering process; the second metal bonding pad (3) and the third metal bonding pad (11) are respectively connected with the corresponding first piezoresistor (5) and the second piezoresistor (9) through metal leads;
s8, respectively etching the back of the silicon substrate by adopting a wet etching process to form a first back cavity (13) and a second back cavity (12);
s9, bonding the borosilicate glass (29) with a substrate through an anodic bonding process to form the double-diaphragm pressure sensor chip (1).
9. The chip manufacturing process for an intelligent pressure sensor according to claim 8, wherein: the thickness of the top silicon layer of the first SOI substrate (27) is 2-5 mu m, the thickness of the bottom silicon layer is 350-450 mu m, and the thickness of the middle oxide layer is 1-3 mu m;
the thickness of the top silicon layer of the second SOI substrate (28) is 6-12 mu m, the thickness of the bottom silicon layer is 350-450 mu m, and the thickness of the middle oxide layer is 1-3 mu m;
the doping concentration adopted in the step S6 is 1 multiplied by 10 15 /cm 3 ～5×10 18 /cm 3 。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311317195.8A CN117490904A (en) | 2023-10-11 | 2023-10-11 | Intelligent pressure sensor and chip manufacturing process thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311317195.8A CN117490904A (en) | 2023-10-11 | 2023-10-11 | Intelligent pressure sensor and chip manufacturing process thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117490904A true CN117490904A (en) | 2024-02-02 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311317195.8A Pending CN117490904A (en) | 2023-10-11 | 2023-10-11 | Intelligent pressure sensor and chip manufacturing process thereof |
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| Country | Link |
|---|---|
| CN (1) | CN117490904A (en) |
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2023
- 2023-10-11 CN CN202311317195.8A patent/CN117490904A/en active Pending
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