CN117485005A

CN117485005A - Resin sheet

Info

Publication number: CN117485005A
Application number: CN202310948524.2A
Authority: CN
Inventors: 奥山英惠; 阪内启之; 池平秀
Original assignee: Ajinomoto Co Inc
Current assignee: Ajinomoto Co Inc
Priority date: 2022-08-02
Filing date: 2023-07-31
Publication date: 2024-02-02
Also published as: JP2024020839A; JP7521560B2

Abstract

The invention provides a resin sheet having a resin composition layer excellent in both cutting property and peeling property. The solution of the present invention is a resin sheet comprising a resin composition layer, wherein the resin composition layer comprises (A) an epoxy resin and (B) an inorganic filler, and the resin composition layer satisfies the following formula (1), wherein 0.09.ltoreq.P (a). Times.P (B)/P (c). Ltoreq.0.3 (1) (in formula (1), P (a) represents a mass reduction rate (%) of the resin composition layer based on heating at 190 ℃ for 30 minutes, P (B) represents an elongation (%) measured at a measurement temperature of 25 ℃ after heating the resin composition layer at 130 ℃ for 30 minutes, and P (c) represents a tensile elastic modulus (GPa) measured at a measurement temperature of 25 ℃ after heating the resin composition layer at 130 ℃ for 30 minutes).

Description

Resin sheet

Technical Field

The present invention relates to a resin sheet having a resin composition layer. Further, the present invention relates to a semiconductor chip package manufactured using a resin sheet and a method for manufacturing the same, a circuit board and a method for manufacturing the same, and a semiconductor device including the semiconductor chip package or the circuit board.

Background

A method for manufacturing a semiconductor chip package such as a wafer level package generally includes a step of forming a cured product layer on a substrate such as a wafer by using a cured product of a resin composition. The cured product layer can function as an insulating layer or a sealing layer, for example. Such a cured product layer may be formed by forming a resin composition layer from a resin composition containing an epoxy resin and an inorganic filler, and curing the resin composition layer. In addition, the resin composition layer may be provided on a substrate by laminating a resin sheet having the resin composition layer with the substrate (see patent document 1).

Prior art literature

Patent literature

Patent document 1: japanese patent application laid-open No. 2017-197656.

Disclosure of Invention

Problems to be solved by the invention

The method for manufacturing a semiconductor chip package using a resin sheet may include: cutting the resin composition layer in conformity with the shape of the base material, laminating the resin sheet having the cut resin composition layer and the base material, and curing the resin composition layer.

The cutting of the resin composition layer is usually performed using a blade. For example, a punching blade formed in a desired shape is pressed in the thickness direction of the resin composition layer, and the resin composition layer is cut so as to be punched into the shape of the punching blade. According to this cutting method, the resin composition layer can be easily cut into a shape conforming to the substrate. For example, in the case of manufacturing a wafer level package using a circular wafer as a base material, the resin composition layer can be easily cut into a circular shape.

However, in the case of using a conventional resin sheet, the above-described dicing may cause chipping in a part of the resin composition layer. Accordingly, the present inventors have studied on suppressing chipping of the resin composition layer at the time of dicing. As a result of the study, the present inventors found that by increasing the amount of the solvent in the resin composition layer, chipping of the resin composition layer can be suppressed. That is, if the amount of the solvent is large, the compatibility between the inorganic filler in the resin composition layer and the resin component such as the epoxy resin becomes good, and the flexibility of the resin composition layer increases, so that the chipping can be suppressed.

However, when the resin composition layer containing the epoxy resin and the inorganic filler contains a large amount of the solvent, there is a case where a disadvantage (problem) occurs in peeling the film layer in the resin sheet having the film layer bonded to the resin composition layer. Specifically, as described below. In order to improve the protection and handling properties of the resin composition layer during storage and transportation, the resin sheet may have a film layer bonded to the resin composition layer. The film layer is generally not required in the semiconductor chip package and is thus peeled off during the manufacturing process of the semiconductor chip package. However, when the amount of the solvent in the resin composition layer is increased, the adhesion strength between the resin composition layer and the film layer tends to be increased. If the adhesion strength becomes too high, the peeling of the film layer may not be smoothly performed, and a part of the resin composition layer may be peeled off together with the film layer.

In this way, there is a trade-off between the property of suppressing chipping when cutting the resin composition layer and the property of suppressing adhesion strength between the resin composition layer and the film layer to smoothly peel the film layer. In the following description, the property of suppressing the chipping of the resin composition layer when the resin composition layer is cut is sometimes referred to as "cuttability". In addition, the property of suppressing the adhesion strength between the resin composition layer and the film layer and allowing smooth peeling of the film layer is sometimes referred to as "peelability".

The present invention has been made in view of the above-described problems, and an object thereof is to provide a resin sheet having a resin composition layer excellent in both cuttability and peelability; a method for manufacturing a semiconductor chip package using the resin sheet; a semiconductor chip package having a cured product layer obtained by curing a resin composition layer excellent in both dicing property and peeling property; a method for producing a circuit board using the resin sheet; a circuit board having a cured product layer obtained by curing a resin composition layer excellent in both cuttability and peelability; and a semiconductor device including the semiconductor chip package or the circuit board.

Means for solving the problems

The present inventors have made an effort to solve the above-described problems. As a result, first, the present inventors have found that: the aforementioned problems can be solved when the first specific parameters including the mass reduction rate P (a) of the resin composition layer containing the epoxy resin and the inorganic filler, which is heated under specific conditions, and the elongation rate P (b) and the tensile elastic modulus P (c), which are measured after the resin composition layer is heated under other specific conditions, are within specific ranges. In addition, second, the present inventors have found the following: the aforementioned problems can be solved when the second specific parameter including the mass reduction rate P (a) of the resin composition layer containing the epoxy resin and the inorganic filler, which is heated under specific conditions, and the vickers hardness P (d) measured after the resin composition layer is heated under other specific conditions, is within a specific range. Moreover, the present inventors have completed the present invention based on these findings.

Namely, the present invention includes the following.

[1] A resin sheet comprising a resin composition layer, wherein,

the resin composition layer contains (A) an epoxy resin and (B) an inorganic filler,

the resin composition layer satisfies the following formula (1),

0.09≤P(a)×P(b)/P(c)≤0.3 (1)

(in the formula (1),

p (a) represents a mass reduction rate (%) of the resin composition layer based on heating at 190℃for 30 minutes,

p (b) represents the elongation (%) measured at the measurement temperature of 25℃after heating the resin composition layer at 130℃for 30 minutes, and P (c) represents the tensile elastic modulus (GPa) measured at the measurement temperature of 25℃after heating the resin composition layer at 130℃for 30 minutes.

[2] A resin sheet comprising a resin composition layer, wherein,

the resin composition layer satisfies the following formula (2),

0.015≤P(a)/P(d)≤0.04 (2)

(in the formula (2),

p (d) represents the Vickers Hardness (HV) measured at a measurement temperature of 25℃after heating the resin composition layer at 130℃for 30 minutes.

[3] The resin sheet according to [1] or [2], wherein the resin composition layer contains (C) an elastomer.

[4] The resin sheet according to any one of [1] to [3], wherein the resin composition layer contains (D) a curing agent.

[5] The resin sheet according to [4], wherein the (D) curing agent comprises a maleimide-based resin.

[6] The resin sheet according to [4] or [5], wherein the (D) curing agent comprises a carbodiimide-based resin.

[7] The resin sheet according to any one of [1] to [6], wherein the thickness of the resin composition layer is 1 μm or more and 150 μm or less.

[8] The resin sheet according to any one of [1] to [7], wherein the resin sheet comprises a film layer in contact with the resin composition layer.

[9] A method of manufacturing a semiconductor chip package, comprising:

a step (I) of cutting the resin composition layer of the resin sheet according to any one of [1] to [8],

A step (II) of laminating the resin sheet having the cut resin composition layer with a base material, and

and (III) curing the resin composition layer.

[10] The method of manufacturing a semiconductor chip package according to [9], wherein the substrate comprises a wafer.

[11] The method for manufacturing a semiconductor chip package according to [9] or [10], wherein the step (I) includes cutting the resin composition layer by pressing a blade in a thickness direction of the resin composition layer.

[12] A semiconductor chip package comprising a cured product layer obtained by curing a resin composition layer,

the resin composition layer satisfies the following formula (1),

0.09≤P(a)×P(b)/P(c)≤0.3 (1)

(in the formula (1),

p (a) represents a mass reduction rate (%) of the resin composition layer based on heating at 190℃for 30 minutes, P (b) represents an elongation (%) measured at a measurement temperature of 25℃after heating the resin composition layer at 130℃for 30 minutes, and P (c) represents a tensile elastic modulus (GPa) measured at a measurement temperature of 25℃after heating the resin composition layer at 130℃for 30 minutes.

[13] A semiconductor chip package comprising a cured product layer obtained by curing a resin composition layer,

the resin composition layer satisfies the following formula (2),

0.015≤P(a)/P(d)≤0.04 (2)

(in the formula (2),

[14] A semiconductor device comprising the semiconductor chip package of [12] or [13 ].

[15] A method for manufacturing a circuit board includes:

and (III) curing the resin composition layer.

[16] A circuit board comprising a cured product layer obtained by curing a resin composition layer,

the resin composition layer satisfies the following formula (1),

0.09≤P(a)×P(b)/P(c)≤0.3 (1)

(in the formula (1),

p (b) represents the elongation (%) measured at a measurement temperature of 25℃after heating the resin composition layer at 130℃for 30 minutes,

p (c) represents a tensile elastic modulus (GPa) measured at a measurement temperature of 25℃after heating the resin composition layer at 130℃for 30 minutes.

[17] A circuit board comprising a cured product layer obtained by curing a resin composition layer,

the resin composition layer satisfies the following formula (2),

0.015≤P(a)/P(d)≤0.04 (2)

(in the formula (2),

[18] A semiconductor device comprising the circuit board of [16] or [17 ].

ADVANTAGEOUS EFFECTS OF INVENTION

According to the present invention, it is possible to provide: a resin sheet having a resin composition layer excellent in both cuttability and peelability; a method for manufacturing a semiconductor chip package using the resin sheet; a semiconductor chip package having a cured product layer obtained by curing a resin composition layer excellent in both dicing property and peeling property; a method for producing a circuit board using the resin sheet; a circuit board having a cured product layer obtained by curing a resin composition layer excellent in both cuttability and peelability; and a semiconductor device including the semiconductor chip package or the circuit board.

Brief description of the drawings

Fig. 1 is a cross-sectional view schematically showing a resin sheet according to first and second embodiments of the present invention;

fig. 2 is a cross-sectional view schematically showing a resin sheet after cutting a resin composition layer in a method for manufacturing a semiconductor chip package according to a third embodiment of the present invention.

Detailed Description

Hereinafter, the present invention will be described in detail with reference to embodiments and examples. However, the present invention is not limited to the embodiments and examples described below, and may be arbitrarily modified and implemented within the scope not exceeding the scope of the claims and their equivalents.

In the following description, the "planar shape" refers to a shape as viewed from the thickness direction unless otherwise specified.

In the following description, unless otherwise specified, the term "resin component" in the resin composition layer means a component in which the inorganic filler is removed from the nonvolatile component in the resin composition layer. The term "resin component" in the resin composition means a component in which the inorganic filler is removed from the nonvolatile component in the resin composition unless otherwise specified.

[ summary of the resin sheet according to the first embodiment ]

The resin sheet according to the first embodiment of the present invention includes a resin composition layer. The resin composition layer contains (A) an epoxy resin and (B) an inorganic filler. The resin sheet satisfies the following formula (1),

0.09≤P(a)×P(b)/P(c)≤0.3 (1)

(in the formula (1),

p (a) represents a mass reduction rate (%) of the resin composition layer based on heating at 190℃for 30 minutes, P (b) represents an elongation (%) measured at a measurement temperature of 25℃after heating the resin composition layer at 130℃for 30 minutes, and P (c) represents a tensile elastic modulus (GPa) measured at a measurement temperature of 25℃after heating the resin composition layer at 130℃for 30 minutes. ).

The resin composition layer of the resin sheet according to the first embodiment can provide excellent both of cutting property and peeling property. Therefore, the resin composition layer of the resin sheet according to the first embodiment can suppress chipping of the resin composition layer at the time of dicing. In addition, in the case where the resin sheet according to the first embodiment includes a film layer provided in contact with the resin composition layer, the film layer can be peeled off smoothly. Conventionally, the foregoing cutting property and peeling property have a trade-off relationship, and according to the resin sheet according to the first embodiment, both the cutting property and peeling property can be improved. Further, when the resin composition layer of the resin sheet according to the first embodiment is cured to obtain a cured product layer, warpage of members such as a semiconductor chip package and a circuit board having the cured product layer can be generally suppressed.

[ description of the relationship represented by the formula (1) ]

In the following description, the parameter of the resin sheet represented by the formula "P (a) ×p (b)/P (c)" is sometimes referred to as "first specific parameter" as appropriate. The first specific parameter "P (a) ×P (b)/P (c)" of the resin sheet satisfies the relationship of the following formula (1),

0.09≤P(a)×P(b)/P(c)≤0.3 (1)

(in the formula (1),

Specifically, the range of the first specific parameter "P (a) ×p (b)/P (c)" is usually 0.09 or more, preferably 0.10 or more, more preferably 0.11 or more, more preferably 0.14 or more, still more preferably 0.16 or more, usually 0.30 or less, preferably 0.25 or less, more preferably 0.20 or less. When the first specific parameter "P (a) ×p (b)/P (c)" is within the aforementioned range, both of the cuttability and the peelability can be made good.

P (a) represents a mass reduction rate (%) of the resin composition layer based on heating at 190℃for 30 minutes. Therefore, the mass reduction ratio P (a) represents the proportion of the component removed from the resin composition layer by heating at 190℃for 30 minutes. Typically, all or most of the components removed by heating at 190 ℃ for 30 minutes are solvents that are volatile components. In addition, the resin composition layer may be heated under severe conditions, such as 190 ℃ for 30 minutes, so that all or most of the solvent contained in the resin composition layer may volatilize. Therefore, the mass reduction ratio P (a) represents the amount of the solvent contained in the resin composition layer before heating, or has a correlation with the amount of the solvent. Therefore, the degree of the amount of the solvent in the resin composition layer can be expressed according to the mass reduction rate P (a).

In general, when the amount of the solvent in the resin composition layer is large, compatibility () between (B) the inorganic filler and (a) the resin component such as the epoxy resin becomes good, which is one cause of the hardness of the resin composition layer, and the flexibility of the resin composition layer is improved. Therefore, the flexibility of the resin composition layer at the time of dicing is improved, and the resin composition layer is suppressed from being damaged when subjected to stress, so that occurrence of chipping can be suppressed. However, if the amount of the solvent is large, the adhesion strength between the resin composition layer and the film layer in contact with the resin composition layer tends to be high. If the adhesion strength is too high, a disadvantage may occur in peeling the film layer. In contrast, when the first specific parameter "P (a) ×p (b)/P (c)" is within the above-described range, the above-described drawbacks can be suppressed, and both the cuttability and the peelability can be improved.

From the viewpoint of remarkably exhibiting the effects of the present invention, the mass reduction rate P (a) is preferably in the range of 0.6% or more, more preferably 0.8% or more, particularly preferably 1.0% or more, more preferably 2.4% or less, more preferably 2.2% or less, particularly preferably 2.0% or less.

The mass reduction rate P (a) can be adjusted by, for example, the kind and ratio of the solvent contained in the resin composition and the drying conditions (drying temperature, drying time, etc.) at the time of forming the resin composition layer. Specifically, the mass reduction rate P (a) can be adjusted by appropriately combining a plurality of solvents having different boiling points and adjusting the drying conditions.

The mass reduction rate P (a) may be obtained by dividing the mass reduction amount DeltaM of the resin composition layer heated at 190℃for 30 minutes by the mass M of the resin composition layer before heating ₀ And the result is obtained. The mass reduction Δm can be obtained as the difference between the mass of the resin composition layer before heating and the mass of the resin composition layer after heating. In the case where the resin sheet includes any layer (for example, a film layer) other than the resin composition layer and the change in mass due to heating of the any layer is small enough to be negligible, the aforementioned mass reduction Δm can be obtained as the difference between the mass of the resin sheet before heating and the mass of the resin sheet after heating. The specific method for measuring the mass reduction rate P (a) can be the method described in the examples.

P (b) represents the elongation (%) of the resin composition layer measured at a measurement temperature of 25℃after heating the resin composition layer at 130℃for 30 minutes. In general, most or all of volatile components such as solvents contained in the resin composition layer are dried by drying based on heating at 130 ℃ for 30 minutes, but non-volatile components such as (a) epoxy resin and (B) inorganic filler remain in the resin composition layer. In addition, by heating at 130 ℃ for 30 minutes, generally, the reaction of the resin component does not proceed or the reaction of the resin component hardly proceeds. Therefore, the elongation P (b) represents or is related to the elongation as a physical property of the nonvolatile component contained in the resin composition layer. Therefore, the elongation P (b) can represent the degree of flexibility of the nonvolatile component of the resin composition layer from which the volatile component such as the solvent is removed.

The resin composition layer having high flexibility of nonvolatile components can suppress damage due to stress. Therefore, even when the resin composition layer is subjected to stress during cutting, the resin composition layer can be prevented from being damaged, and therefore occurrence of chipping can be prevented. Further, the softness of the nonvolatile component of the resin composition layer can contribute to suppression of cohesive failure of the resin composition layer due to stress at the time of peeling of the film layer, and thus can contribute to suppression of peeling of a part of the resin composition layer (usually, a part near the surface) due to such cohesive failure. On the other hand, since the resin composition layer having a soft nonvolatile matter tends to have high adhesion strength to the film layer, the stress tends to be large at the time of peeling the film layer, and in this sense, peeling of a part of the resin composition layer tends to occur. Therefore, only the adjustment of the elongation P (b) cannot improve both the cutting property and the peeling property. However, when the first specific parameter "P (a) ×p (b)/P (c)" is within the aforementioned range, both of the cuttability and the peelability can be improved.

From the viewpoint of remarkably exhibiting the effects of the present invention, the range of the elongation P (b) is preferably 0.8% or more, more preferably 0.9% or more, still more preferably 1.6% or less, still more preferably 1.5% or less, particularly preferably 1.4% or less.

The elongation P (b) can be adjusted by, for example, the kind and ratio of the nonvolatile components contained in the resin composition. Specifically, the elongation (B) can be adjusted by appropriately combining the type and amount of (a) the epoxy resin, (B) the amount of the inorganic filler, and (C) the type and amount of the elastomer and (D) the curing agent.

The elongation P (b) can be measured at a measurement temperature of 25℃using a cured product for evaluation obtained by heating a resin composition layer at 130℃for 30 minutes. The measurement can be performed in accordance with JIS K7127. Specific methods for measuring the elongation P (b) can be the methods described in the examples.

P (c) represents the tensile elastic modulus (GPa) of the resin composition layer measured at a measurement temperature of 25℃after heating the resin composition layer at 130℃for 30 minutes. As described above, most or all of the volatile components such as the solvent contained in the resin composition layer are dried by heating at 130 ℃ for 30 minutes, but the nonvolatile components such as (a) the epoxy resin and (B) the inorganic filler remain in the resin composition layer. In addition, by heating at 130 ℃ for 30 minutes, generally, no reaction of the resin component is performed or almost no reaction of the resin component is performed. Therefore, the tensile elastic modulus P (c) represents or is related to the tensile elastic modulus which is a physical property of the nonvolatile component contained in the resin composition layer. Therefore, the tensile elastic modulus P (c) can represent the degree of rigidity of the nonvolatile component of the resin composition layer from which the volatile component such as the solvent is removed.

In general, a resin composition layer having high rigidity of nonvolatile components tends to have low adhesion strength to a film layer. Therefore, the stress applied to the resin composition layer at the time of peeling the film layer can be reduced, and therefore, the disadvantage at the time of peeling the film layer can be suppressed. However, if the resin composition layer has high rigidity of nonvolatile components, the resin composition layer becomes brittle and is liable to generate chipping during dicing. In contrast, when the first specific parameter "P (a) ×p (b)/P (c)" is within the above-described range, the notch can be suppressed, and both the cuttability and the peelability can be improved.

From the viewpoint of remarkably exhibiting the effects of the present invention, the tensile elastic modulus P (c) is preferably 8GPa or more, more preferably 9GPa or more, still more preferably 16GPa or less, more preferably 15GPa or less, still more preferably 14GPa or less, still more preferably 13GPa or less.

The tensile elastic modulus P (c) can be adjusted by, for example, the kind and ratio of the nonvolatile components contained in the resin composition. Specifically, the tensile elastic modulus P (C) can be adjusted by selecting and appropriately combining (a) the kind and amount of the epoxy resin, (B) the amount of the inorganic filler, and (C) the kind and amount of the elastomer and (D) the curing agent.

The tensile elastic modulus P (c) can be measured at a measurement temperature of 25 ℃ using a cured product for evaluation obtained by heating the resin composition layer at 130 ℃ for 30 minutes. The measurement can be performed according to JIS K7127. Specific methods for measuring the tensile elastic modulus P (c) can be the methods described in the examples.

[ outline of the resin sheet according to the second embodiment ]

The resin sheet according to the second embodiment of the present invention includes a resin composition layer. The resin composition layer contains (A) an epoxy resin and (B) an inorganic filler. The resin sheet satisfies the following formula (2),

0.015≤P(a)/P(d)≤0.04 (2)

(in the formula (2),

p (d) represents the Vickers Hardness (HV) measured at a measurement temperature of 25℃after heating the resin composition layer at 130℃for 30 minutes. ).

According to the resin sheet according to the second embodiment, the same advantages as those of the resin sheet according to the first embodiment can be obtained. Therefore, the resin composition layer of the resin sheet according to the second embodiment can provide excellent both of the cuttability and the peelability. Therefore, the resin composition layer of the resin sheet according to the second embodiment can suppress chipping of the resin composition layer at the time of dicing. In addition, when the resin sheet according to the second embodiment has a film layer provided in contact with the resin composition layer, the peeling of the film layer can be smoothly performed. Conventionally, the aforementioned cuttability and peelability have a trade-off relationship, and according to the resin sheet according to the second embodiment, both of these cuttability and peelability can be improved. In addition, when the resin composition layer of the resin sheet according to the second embodiment is cured to obtain a cured product layer, warpage of components such as a semiconductor chip package and a circuit board having the cured product layer can be generally suppressed.

[ description of the relationship represented by the formula (2) ]

In the following description, the parameter of the resin sheet represented by the formula "P (a)/P (d)" is sometimes referred to as "second specific parameter" as appropriate. The second specific parameter "P (a)/P (d)" of the resin sheet satisfies the relationship of the following formula (2),

0.015≤P(a)/P(d)≤0.04 (2)

(in the formula (2),

Specifically, the range of the second specific parameter "P (a)/P (d)" is usually 0.015 or more, preferably 0.020 or more, more preferably 0.024 or more, further preferably 0.025 or more, usually 0.040 or less, preferably 0.033 or less, further preferably 0.030 or less. When the second specific parameter "P (a)/P (d)" falls within the aforementioned range, both the cuttability and the peelability can be made good.

P (a) in the formula (2) represents the same parameter as P (a) in the formula (1). Therefore, P (a) in the formula (2) represents a mass reduction rate (%) of the resin composition layer based on heating at 190℃for 30 minutes. The technical meaning, range, adjustment method, and measurement method of the mass reduction rate P (a) in the formula (2) may be the same as those of the mass reduction rate P (a) in the formula (1).

P (d) represents the Vickers Hardness (HV) measured at a measurement temperature of 25℃after heating the resin composition layer at 130℃for 30 minutes. In general, most or all of volatile components such as solvents contained in the resin composition layer are dried by heating at 130 ℃ for 30 minutes, but non-volatile components such as (a) epoxy resin and (B) inorganic filler remain in the resin composition layer. In addition, according to 130 degrees C, 30 minutes of heating, generally, does not carry out the resin composition reaction, or hardly carries out the resin composition reaction. Accordingly, the vickers hardness P (d) represents the hardness that is a physical property of the nonvolatile component contained in the resin composition layer, or has a correlation with the hardness. Therefore, the vickers hardness P (d) can represent the degree of hardness of the nonvolatile component of the resin composition layer from which the volatile component such as the solvent is removed.

In general, a resin composition layer having high hardness of nonvolatile components tends to have low adhesion strength to a film layer. Therefore, the stress applied to the resin composition layer at the time of film peeling can be reduced, and the defect at the time of film peeling can be suppressed. However, if the hardness of the nonvolatile component of the resin composition layer is high, the brittleness of the resin composition layer becomes large, and chipping during dicing tends to occur. On the other hand, when the second specific parameter "P (a)/P (d)" falls within the above range, the notch is suppressed, and both the cuttability and the peelability are improved.

From the viewpoint of remarkably exhibiting the effect of the present invention, the range of the vickers hardness P (d) is preferably 32HV or more, more preferably 34HV or more, still more preferably 36HV or more, still more preferably 100HV or less, still more preferably 95HV or less, still more preferably 90HV or less, particularly preferably 68HV or less.

The vickers hardness P (d) can be adjusted by, for example, the kind and ratio of the nonvolatile components contained in the resin composition. Specifically, the vickers hardness P (D) can be adjusted by appropriately selecting and combining the type and amount of (a) the epoxy resin, (B) the inorganic filler, and (C) the elastomer and (D) the curing agent.

The vickers hardness P (d) can be measured at a measurement temperature of 25 ℃ using a cured product for evaluation obtained by heating the resin composition layer at 130 ℃ for 30 minutes. The measurement may be performed using a vickers hardness tester. Specific measurement methods of the vickers hardness P (d) can be employed as described in examples.

[ composition of resin composition layer ]

The resin sheet according to the first embodiment of the present invention and the resin sheet according to the second embodiment of the present invention include a resin composition layer including (a) an epoxy resin and (B) an inorganic filler. In the following description, the resin composition layer including the resin sheet according to the first embodiment and the resin composition layer of the resin sheet according to the second embodiment are sometimes simply referred to as "resin composition layer". The resin composition layer generally contains the aforementioned resin composition containing (a) an epoxy resin and (B) an inorganic filler, and preferably contains only the resin composition. The resin composition comprising the combination of (A) an epoxy resin and (B) an inorganic filler is excellent in dielectric characteristics such as dielectric loss tangent. In addition, a resin sheet having the first specific parameter "P (a) ×p (b)/P (c)" of the above range and/or the second specific parameter "P (a)/P (d)" of the above range can make both of the cuttability and the peelability good.

((A) epoxy resin)

The epoxy resin (a) as the component (a) is a curable resin having an epoxy group. Examples of the epoxy resin (a) include a bisxylenol (bisbenzoxol) type epoxy resin, a bisphenol a type epoxy resin, a bisphenol F type epoxy resin, a bisphenol S type epoxy resin, a bisphenol AF type epoxy resin, a dicyclopentadiene type epoxy resin, a triphenol type epoxy resin, a naphthol novolac (naphthalene type epoxy resin, a phenol novolac (phenol novolac) type epoxy resin, a tert-butylcatechol type epoxy resin, a naphthalene type epoxy resin, a naphthol type epoxy resin, an anthracene type epoxy resin, a glycidylamine type epoxy resin, a glycidylester type epoxy resin, a cresol novolac (cresol novolac) type epoxy resin, a phenol aralkyl type epoxy resin, a biphenyl type epoxy resin, a linear aliphatic epoxy resin, an epoxy resin having a butadiene structure, a alicyclic epoxy resin, a heterocyclic type epoxy resin, a spiro-ring-containing epoxy resin, a cyclohexane type epoxy resin, a cyclohexane dimethanol type epoxy resin, a naphthylene ether (naphthylene ether) type epoxy resin, a trimethylol type epoxy resin, a tetraphenyl ethane type epoxy resin, an isocyanatone type epoxy resin, and an aliphatic phthalene type epoxy resin. (A) The epoxy resin may be used alone or in combination of 1 or more than 2.

From the viewpoint of obtaining a cured product layer excellent in heat resistance, the (a) epoxy resin preferably contains an epoxy resin having an aromatic structure. Aromatic structures are chemical structures that are generally defined as aromatic, and also include polycyclic aromatic and aromatic heterocyclic rings. Examples of the epoxy resin having an aromatic structure include bisphenol a type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, bisphenol AF type epoxy resin, dicyclopentadiene type epoxy resin, triphenol type epoxy resin, naphthol novolac type epoxy resin, phenol novolac type epoxy resin, tert-butylcatechol type epoxy resin, naphthalene type epoxy resin, naphthol type epoxy resin, anthracene type epoxy resin, xylenol type epoxy resin, glycidylamine type epoxy resin having an aromatic structure, glycidylester type epoxy resin having an aromatic structure, cresol novolac type epoxy resin, biphenyl type epoxy resin, phenol phthalimidine type epoxy resin, linear aliphatic epoxy resin having an aromatic structure, alicyclic epoxy resin having an aromatic structure, heterocyclic type epoxy resin, spiro ring-containing epoxy resin having an aromatic structure, cyclohexanedimethanol type epoxy resin having an aromatic structure, naphthylene ether type epoxy resin, trimethylol type epoxy resin having an aromatic structure, tetraphenylethane type epoxy resin having an aromatic structure, and the like.

(A) The epoxy resin preferably contains an epoxy resin having 2 or more epoxy groups in 1 molecule. The proportion of the epoxy resin having 2 or more epoxy groups in 1 molecule is preferably 50% by mass or more, more preferably 60% by mass or more, particularly preferably 70% by mass or more, based on 100% by mass of the nonvolatile component of the (a) epoxy resin.

The epoxy resin includes an epoxy resin that is liquid at a temperature of 20 ℃ (hereinafter sometimes referred to as "liquid epoxy resin") and an epoxy resin that is solid at a temperature of 20 ℃ (hereinafter sometimes referred to as "solid epoxy resin"). (A) The epoxy resin may contain only a liquid epoxy resin, or may contain only a solid epoxy resin, or may contain a liquid epoxy resin and a solid epoxy resin in combination.

As the liquid epoxy resin, a liquid epoxy resin having 2 or more epoxy groups in 1 molecule is preferable. The liquid epoxy resin is preferably bisphenol a type epoxy resin, bisphenol F type epoxy resin, bisphenol AF type epoxy resin, naphthalene type epoxy resin, glycidyl ester type epoxy resin, glycidyl amine type epoxy resin, phenol novolac type epoxy resin, alicyclic epoxy resin having an ester skeleton, cyclohexane type epoxy resin, cyclohexanedimethanol type epoxy resin, epoxy resin having a butadiene structure, aliphatic triglycidyl ether type epoxy resin, particularly preferably aliphatic triglycidyl ether type epoxy resin. Examples of the aliphatic triglycidyl ether type epoxy resin include polyhydroxymethylalkane triglycidyl ether, and specific examples thereof include trimethylolpropane triglycidyl ether.

Specific examples of the liquid epoxy resin include "HP4032", "HP4032D", "HP4032SS" (naphthalene type epoxy resin) manufactured by DIC corporation; "828US", "828EL", "jER828EL", "825", "EPIKOTE 828EL" manufactured by Mitsubishi chemical corporation (bisphenol A type epoxy resin); "jER807", "1750" manufactured by mitsubishi chemical company (bisphenol F type epoxy resin); "jER152" (phenol novolac type epoxy resin) manufactured by mitsubishi chemical company; "630", "630LSD", "604" (glycidylamine type epoxy resin) manufactured by Mitsubishi chemical corporation; "ED-523T" (glycine ring epoxy resin) manufactured by ADEKA company; "EP-3950L", "EP-3980S" (glycidylamine type epoxy resin) manufactured by ADEKA Co; "EP-4088S" (dicyclopentadiene type epoxy resin) manufactured by ADEKA Co., ltd; "ZX1059" manufactured by Nissan chemical materials Co., ltd. (a mixture of bisphenol A type epoxy resin and bisphenol F type epoxy resin); "ZX1658", "ZX1658GS" (liquid 1, 4-glycidyl cyclohexane type epoxy resin) manufactured by Nissan chemical materials Co., ltd; "EX-721" (glycidyl ester type epoxy resin) manufactured by Nagase ChemteX Co., ltd; "EX-321L" (aliphatic triglycidyl ether type epoxy resin) manufactured by Nagase ChemteX Co., ltd; "Celloxide 2021P" (alicyclic epoxy resin having an ester skeleton) manufactured by Daxil corporation; "PB-3600" by Daxillon, and "JP-100" and "JP-200" by Nippon Caesada (epoxy resin having butadiene structure) are described. These may be used alone or in combination of 1 or more than 2.

The solid epoxy resin is preferably a solid epoxy resin having 3 or more epoxy groups in 1 molecule, more preferably an aromatic solid epoxy resin having 3 or more epoxy groups in 1 molecule. As the solid epoxy resin, there are preferable a binaphthol-type epoxy resin, a naphthalene-type tetrafunctional epoxy resin, a naphthol novolac-type epoxy resin, a cresol novolac-type epoxy resin, a dicyclopentadiene-type epoxy resin, a triphenol-type epoxy resin, a naphthol-type epoxy resin, a biphenyl-type epoxy resin, a naphthylene-ether-type epoxy resin, an anthracene-type epoxy resin, a bisphenol A-type epoxy resin, a bisphenol AF-type epoxy resin, a phenol aralkyl-type epoxy resin, a tetraphenylethane-type epoxy resin, and a phenol benzopyrrolone-type epoxy resin.

Specific examples of the solid epoxy resin include "HP4032H" (naphthalene type epoxy resin) manufactured by DIC corporation; "HP-4700", "HP-4710" manufactured by DIC corporation (naphthalene type tetrafunctional epoxy resin); "N-690" (cresol novolac type epoxy resin) manufactured by DIC Co., ltd; "N-695" manufactured by DIC Co., ltd. (cresol novolak type epoxy resin); "HP-7200", "HP-7200HH", "HP-7200H", "HP-7200L" (dicyclopentadiene type epoxy resin) manufactured by DIC Co; "EXA-7311", "EXA-7311-G3", "EXA-7311-G4S", "HP6000" (naphthylene ether type epoxy resin) manufactured by DIC Co., ltd; "EPPN-502H" (triphenol type epoxy resin) manufactured by Japanese chemical Co., ltd; "NC7000L" manufactured by Japanese chemical Co., ltd. (naphthol novolac type epoxy resin); "NC3000H", "NC3000L", "NC3000FH", "NC3100" (biphenyl type epoxy resin) manufactured by japan chemical pharmaceutical company; "ESN475V" (naphthol type epoxy resin) and "ESN4100V" (naphthalene type epoxy resin) manufactured by Nissan chemical materials Co., ltd; "ESN485" (naphthol type epoxy resin) manufactured by Nissan chemical materials Co., ltd; "ESN375" manufactured by Nissan chemical materials Co., ltd. (dihydroxynaphthalene type epoxy resin); "YX4000H", "YX4000HK", "YL7890" (Bixylenol type epoxy resin) manufactured by Mitsubishi chemical corporation; "YL6121" (biphenyl type epoxy resin) manufactured by Mitsubishi chemical corporation; "YX8800" (anthracene-type epoxy resin) manufactured by mitsubishi chemical company; "YX7700" manufactured by Mitsubishi chemical corporation (phenol aralkyl type epoxy resin); "PG-100", "CG-500" manufactured by Osaka gas chemical Co., ltd; "YL7760" (bisphenol AF type epoxy resin) manufactured by Mitsubishi chemical corporation; "YL7800" (fluorene type epoxy resin) manufactured by Mitsubishi chemical corporation; "jER1010" (bisphenol a type epoxy resin) manufactured by mitsubishi chemical company; "jER1031S" (tetraphenylethane type epoxy resin) manufactured by mitsubishi chemical company; "WHR991S" (phenol benzopyrrolidone type epoxy resin) manufactured by Japanese chemical Co., ltd. These may be used alone or in combination of 1 or more than 2.

When the liquid epoxy resin and the solid epoxy resin are used in combination as the epoxy resin (a), the mass ratio thereof (liquid epoxy resin: solid epoxy resin) is preferably 20:1 to 1:20, more preferably 10:1 to 1:10, particularly preferably 7:1 to 1:7.

(A) The epoxy equivalent of the epoxy resin is preferably 50g/eq to 5000g/eq, more preferably 60g/eq to 3000g/eq, still more preferably 80g/eq to 2000g/eq, particularly preferably 110g/eq to 1000g/eq. The epoxy equivalent represents the mass of the resin per 1 equivalent of epoxy group. The epoxy equivalent can be measured according to JIS K7236.

(A) The weight average molecular weight (Mw) of the epoxy resin is preferably 100 to 5000, more preferably 250 to 3000, still more preferably 400 to 1500. The weight average molecular weight of the resin can be measured as a value converted to polystyrene by Gel Permeation Chromatography (GPC).

The amount of the epoxy resin (a) in the resin composition layer is preferably 1 mass% or more, more preferably 2 mass% or more, still more preferably 3 mass% or more, still more preferably 20 mass% or less, still more preferably 15 mass% or less, still more preferably 10 mass% or less, based on 100 mass% of the nonvolatile component in the resin composition layer. The amount of the (a) epoxy resin in the resin composition is preferably in the same range as the amount of the (a) epoxy resin in the resin composition layer of 100 mass% relative to the nonvolatile matter in the resin composition layer. In the resin sheet having the first specific parameter "P (a) ×p (b)/P (c)" of the above range and/or the second specific parameter "P (a)/P (d)" of the above range, when the amount of the (a) epoxy resin is within the above range, the dicing property and the peeling property can be particularly good, and further, warpage of a member such as a semiconductor chip package having a cured product layer formed using the resin sheet can be generally effectively suppressed.

The amount of the epoxy resin (a) in the resin composition layer is preferably in the range of 5 mass% or more, more preferably 10 mass% or more, further preferably 15 mass% or more, still more preferably 60 mass% or less, still more preferably 50 mass% or less, further preferably 40 mass% or less, relative to 100 mass% of the resin component in the resin composition layer. The range of the amount of the (a) epoxy resin in the resin composition relative to 100% by mass of the resin component in the resin composition is preferably the same as the aforementioned range of the amount of the (a) epoxy resin in the resin composition layer relative to 100% by mass of the resin component in the resin composition layer. In the resin sheet having the first specific parameter "P (a) ×p (b)/P (c)" of the above range and/or the second specific parameter "P (a)/P (d)" of the above range, when the amount of the (a) epoxy resin is within the above range, the dicing property and the peeling property can be particularly good, and further, warpage of a member such as a semiconductor chip package having a cured product layer formed using the resin sheet can be generally effectively suppressed.

((B) inorganic filler)

The inorganic filler (B) as the component (B) is generally contained in the resin composition and the resin composition layer in the form of particles. As the material of the inorganic filler (B), an inorganic compound is used. Examples of the material of the inorganic filler (B) include silica, alumina, glass, cordierite, silicon oxide, barium sulfate, barium carbonate, talc, clay, mica powder, zinc oxide, hydrotalcite, boehmite, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium oxide, boron nitride, aluminum nitride, manganese nitride, aluminum borate, strontium carbonate, strontium titanate, calcium titanate, magnesium titanate, bismuth titanate, titanium oxide, zirconium oxide, barium titanate, barium zirconate, calcium zirconate, zirconium phosphate, and zirconium tungstate. Among them, silica and alumina are preferable, and silica is particularly preferable. Examples of the silica include amorphous silica, fused silica, crystalline silica, synthetic silica, and hollow silica. In addition, as the silica, spherical silica is preferable. (B) The inorganic filler may be used singly or in combination of two or more.

Examples of the commercial products of the inorganic filler (B) include "SP60-05" and "SP507-05" manufactured by Nissan chemical materials Co., ltd; "YC100C", "YA050C-MJE", "YA010C", "SC2500SQ", "SO-C4", "SO-C2", "SO-C1", "SC2050-SXF" manufactured by Yadu Marc; "UFP-30", "DAW-03", "FB-105FD" manufactured by DENKA corporation; "SILFIL NSS-3N", "SILFIL NSS-4N", "SILFILNSS-5N" manufactured by Tokuyama Co., ltd.

From the viewpoint of significantly obtaining the desired effect of the present invention, the range of the average particle diameter of the inorganic filler (B) is preferably 0.01 μm or more, more preferably 0.05 μm or more, particularly preferably 0.1 μm or more, more preferably 10 μm or less, more preferably 7 μm or less, and still more preferably 5 μm or less.

(B) The average particle size of the inorganic filler material can be determined by a laser diffraction scattering method based on Mie scattering theory. Specifically, the particle size distribution of the inorganic filler can be produced by a laser diffraction scattering type particle size distribution measuring apparatus on a volume basis, and the median particle size can be measured as the average particle size. As a measurement sample, a sample obtained by weighing 100mg of an inorganic filler and 10g of methyl ethyl ketone into a vial and dispersing by ultrasonic waves for 10 minutes was used. For the measurement sample, a laser diffraction type particle size distribution measuring apparatus was used, blue and red were used as light source wavelengths, the volume-based particle size distribution of the inorganic filler was measured by a flow cell (flow cell), and the average particle size was calculated from the obtained particle size distribution as the median particle size. Examples of the laser diffraction type particle size distribution measuring apparatus include "LA-960" manufactured by horiba, inc.

From the viewpoint of significantly obtaining the desired effect of the present invention, (B) the range of the specific surface area of the inorganic filler is preferably 1m ² Preferably at least/g, more preferably at least 2m ² Preferably at least 3m ² And/g. The upper limit is not particularly limited, but is preferably 60m ² Per gram of less than 50m ² /g or less than 40m ² And/g or less. The specific surface area can be measured by adsorbing nitrogen gas onto the surface of a sample by a specific surface area measuring device (Macsorb HM-1210 manufactured by mountain Co., ltd.) according to the BET method, and calculating the specific surface area by the BET multipoint method.

From the viewpoint of improving moisture resistance and dispersibility, (B) the inorganic filler is preferably treated with a surface treating agent. Examples of the surface treating agent include fluorine-containing silane coupling agents, aminosilane coupling agents, epoxysilane coupling agents, mercaptosilane coupling agents, silane coupling agents, alkoxysilanes, organosilane-nitrogen compounds, titanate coupling agents, and the like. The surface treating agent may be used alone in an amount of 1 kind, or may be used in an amount of 2 or more kinds in any combination.

Examples of the commercial products of the surface treatment agent include "KBM403" (3-glycidoxypropyl trimethoxysilane) manufactured by Shimadzu chemical Co., ltd., "KBM803" (3-mercaptopropyl trimethoxysilane) manufactured by Shimadzu chemical Co., ltd., KBE903 "(3-aminopropyl triethoxysilane) manufactured by Shimadzu chemical Co., ltd., KBM573" (N-phenyl-3-aminopropyl trimethoxysilane) manufactured by Shimadzu chemical Co., ltd., SZ-31 "(hexamethyldisilazane) manufactured by Shimadzu chemical Co., ltd., KBM103" (phenyl trimethoxysilane) manufactured by Shimadzu chemical Co., ltd., KBM-4803 "(long chain epoxy silane coupling agent) manufactured by Shimadzu chemical Co., ltd., KBM-7103" (3, 3-trifluoropropyl trimethoxysilane) and the like.

The degree of the surface treatment with the surface treatment agent is preferably within a specific range from the viewpoint of improving the dispersibility of the inorganic filler (B). Specifically, the inorganic filler is preferably surface-treated with 0.2 to 5 mass% of a surface-treating agent, more preferably 0.2 to 3 mass% of a surface-treating agent, and even more preferably 0.3 to 2 mass% of a surface-treating agent.

The degree of surface treatment by the surface treatment agent can be evaluated by the amount of carbon per unit surface area of the inorganic filler. The carbon amount per unit surface area of the inorganic filler is preferably 0.02mg/m from the viewpoint of improving the dispersibility of the inorganic filler ² The above is more preferably 0.1mg/m ² The above is more preferably 0.2mg/m ² The above. On the other hand, from the viewpoint of suppressing the rise in melt viscosity of the resin composition, it is preferably 1.0mg/m ² Hereinafter, more preferably 0.8mg/m ² The following is more preferable to be 0.5mg/m ² The following is given.

(B) The carbon amount per unit surface area of the inorganic filler can be measured after the surface-treated inorganic filler is subjected to a washing treatment with a solvent such as Methyl Ethyl Ketone (MEK). Specifically, a sufficient amount of MEK was added as a solvent to the inorganic filler surface-treated with the surface treating agent, and the mixture was ultrasonically cleaned at 25 ℃ for 5 minutes. After the supernatant is removed and the solid component is dried, the carbon amount per unit surface area of the inorganic filler can be measured using a carbon analyzer. As the carbon analyzer, EMIA-320V manufactured by horiba, inc. can be used.

The amount of the inorganic filler (B) in the resin composition layer is preferably 50 mass% or more, more preferably 60 mass% or more, still more preferably 70 mass% or more, particularly preferably 77 mass% or more, still more preferably 90 mass% or less, still more preferably 86 mass% or less, still more preferably 83 mass% or less, particularly preferably 81 mass% or less, based on 100 mass% of the nonvolatile component in the resin composition layer. The amount of the inorganic filler (B) in the resin composition is preferably in the same range as the amount of the inorganic filler (B) in the resin composition layer, relative to 100% by mass of the nonvolatile component in the resin composition layer. In the resin sheet having the first specific parameter "P (a) ×p (B)/P (c)" in the above range and/or the second specific parameter "P (a)/P (d)" in the above range, when the amount of the (B) inorganic filler is in the above range, the dicing property and the peeling property can be particularly improved, and further, warpage of a member such as a semiconductor chip package having a cured product layer formed using the resin sheet can be generally effectively suppressed.

((C) elastomer)

The resin composition layers and the resin compositions according to the first and second embodiments may contain (C) an elastomer as an arbitrary component. The elastomer (C) as the component (C) does not contain any substances belonging to the components (A) to (B).

(C) The elastic body is a soft resin, preferably a resin having rubber elasticity or a resin exhibiting rubber elasticity by polymerization with other components. Examples of the rubber elasticity include resins exhibiting an elastic modulus of 1GPa or less when subjected to a tensile test at a temperature of 25℃and a humidity of 40% RH in accordance with Japanese Industrial standards (JIS K7161). (C) The elastomer is typically an amorphous resin component that is soluble in an organic solvent. (C) The elastomer may be used alone in 1 kind, or may be used in combination of 2 or more kinds in any ratio. Since the elongation P (b), the tensile elastic modulus P (C), and the vickers hardness P (d) of the resin composition layer can be adjusted by the (C) elastomer, it is possible to easily control to accommodate the first specific parameter "P (a) ×p (b)/P (C)" of the resin sheet and the second specific parameter "P (a)/P (d)" of the above range in the above range.

(C) The elastomer is preferably of high molecular weight. (C) The number average molecular weight (Mn) of the elastomer is preferably 1000 or more, more preferably 1500 or more, still more preferably 2000 or more, still more preferably 3000 or more, particularly preferably 5000 or more. The upper limit of the number average molecular weight is not particularly limited, but is preferably 1000000 or less, more preferably 900000 or less. The number average molecular weight (Mn) is a polystyrene-equivalent number average molecular weight measured using GPC (gel permeation chromatography).

(C) The elastomer is preferably 1 or more selected from resins having a glass transition temperature (Tg) of 25 ℃ or lower and resins in a liquid state at 25 ℃ or lower. The glass transition temperature (Tg) of the resin is preferably not more than 25℃and more preferably not more than 20℃and still more preferably not more than 15 ℃. The lower limit of the glass transition temperature is not particularly limited, and may be usually at least-15 ℃. The resin that is in a liquid state at 25℃is preferably a resin that is in a liquid state at 20℃or lower, more preferably a resin that is in a liquid state at 15℃or lower. The glass transition temperature can be measured by DSC (differential scanning calorimetry) at a temperature rise rate of 5 ℃/min.

(C) The elastomer is preferably a resin having a structure of 1 or more selected from the group consisting of polybutadiene structure, polysiloxane structure, poly (meth) acrylate structure, polyalkylene oxide structure, polyisoprene structure, polyisobutylene structure, polycarbonate structure, and polystyrene structure in the molecule. "(meth) acrylate" is a term that includes methacrylates and acrylates, and combinations thereof. These structures may be contained in the main chain of the molecule of the elastomer (C) or in the side chain.

Examples of the elastomer (C) include resins containing polybutadiene structures. The polybutadiene structure may be contained in the main chain or in the side chain. In addition, the polybutadiene structure may be partially or fully hydrogenated. Resins containing polybutadiene structures are sometimes referred to as "polybutadiene resins". Specific examples of the polybutadiene resin include "Ricon 130MA8", "Ricon 130MA13", "Ricon 130MA20", "Ricon131MA 5", "Ricon131MA10", "Ricon131MA 17", "Ricon131MA 20", "Ricon 184MA6" (polybutadiene containing an anhydride group), and "GQ-1000" (polybutadiene having a hydroxyl group and a carboxyl group introduced therein), "G-1000", "G-2000", "G-3000" (both terminal hydroxyl polybutadiene), "GI-1000", "GI-2000", "GI-3000" (both terminal hydroxyl hydrogenated polybutadiene), and "FCA-061L" (hydrogenated polybutadiene skeleton epoxy resin), manufactured by Nagase ChemteX, inc. Further, specific examples of the polybutadiene resin include a butadiene resin containing a phenolic hydroxyl group; polyimide resins having a polybutadiene structure, a urethane structure and an imide structure in the molecule. The polyimide resin can be produced into a linear polyimide resin using a hydroxyl-terminated polybutadiene, a diisocyanate compound and a tetrabasic acid anhydride as raw materials (polyimide described in Japanese unexamined patent application publication No. 2006-37083 and International publication No. 2008/153208). The content of the butadiene structure in the polyimide resin is preferably 60 to 95 mass%, more preferably 75 to 85 mass%. For details of this polyimide resin, refer to the descriptions of Japanese patent application laid-open No. 2006-37083 and International publication No. 2008/153208, which are incorporated herein by reference.

Examples of the (C) elastomer include resins containing a poly (meth) acrylate structure. Resins containing poly (meth) acrylate structures are sometimes referred to as "poly (meth) acrylic resins". Specific examples of the poly (meth) acrylic resin include TEISANRESIN by Nagase ChemteX, and "ME-2000", "W-116.3", "W-197C", "KG-25", "KG-3000" by the root Industrial Co., ltd.

Examples of the elastomer (C) include resins having a polycarbonate structure. Resins containing a polycarbonate structure are sometimes referred to as "polycarbonate resins". Specific examples of the polycarbonate resin include "FPC0220", "FPC2136", manufactured by Mitsubishi gas chemical corporation, "T6002", "T6001" (polycarbonate diol), manufactured by Asahi chemical corporation, and "C-1090", "C-2090", "C-3090" (polycarbonate diol), manufactured by Coleus corporation. Further, specific examples of the polycarbonate resin include polyimide resins having an imide structure, a urethane structure, and a polycarbonate structure in the molecule. For this polyimide resin, a linear polyimide resin can be produced using a hydroxyl-terminated polycarbonate, a diisocyanate compound and a tetrabasic acid anhydride as raw materials. The content of the carbonate structure of the polyimide resin is preferably 60 to 95 mass%, more preferably 75 to 85 mass%. For details of this polyimide resin, reference is made to the description of International publication No. 2016/129541, which is incorporated herein by reference.

Examples of the elastomer (C) include resins containing a polysiloxane structure. Resins containing polysiloxane structures are sometimes referred to as "silicone resins". Specific examples of the silicone resin include "SMP-2006", "SMP-2003PGMEA", and "SMP-5005PGMEA", which are manufactured by the more organosilicon company, and linear polyimides prepared from an amino terminal polysiloxane and a quaternary anhydride (International publication No. 2010/053185, japanese patent application laid-open No. 2002-12667, japanese patent application laid-open No. 2000-319386, and the like).

Examples of the elastomer (C) include resins having a polyalkylene structure or a polyalkylene oxide structure. Resins containing polyalkylene structures are sometimes referred to as "alkylene resins". In addition, a resin containing a polyalkylene oxide structure is sometimes referred to as "alkylene oxide resin". The number of carbon atoms of the polyalkylene structure and the polyalkylene oxide structure is preferably 2 to 15, more preferably 3 to 10, particularly preferably 5 to 6, respectively. Specific examples of the alkylene resin and the alkyleneoxy resin include "PTXG-1000", "PTXG-1800" manufactured by Asahi Kabushiki Kaisha; "EXA-48150-150", "EXA-4816", "EXA-4812" manufactured by DIC corporation; ADEKA corporation "EP-4000", "EP-4003", "EP-4010", "EP-4011"; "BEO-60E", "BPO-20E" manufactured by New Japanese physicochemical Co Ltd; "YL7175", "YL7410", manufactured by Mitsubishi chemical corporation, and the like.

Examples of the elastomer (C) include resins containing a polyisoprene structure. Resins containing polyisoprene structures are sometimes referred to as "isoprene resins". Specific examples of the isoprene resin include "KL-610", "KL613", manufactured by Coleus corporation.

Examples of the elastomer (C) include resins having a polyisobutylene structure. Resins containing a polyisobutylene structure are sometimes referred to as "isobutylene resins". Specific examples of the isobutylene resin include "SIBSTAR-073T" (styrene-isobutylene-styrene triblock copolymer) and "SIBSTAR-042D" (styrene-isobutylene diblock copolymer) manufactured by Kaneka corporation.

Examples of the elastomer (C) include resins having a polystyrene structure. Resins containing polystyrene structures are sometimes referred to as "polystyrene resins". The polystyrene resin may be a copolymer containing any repeating unit different from the styrene unit in combination with the styrene unit, or may be a hydrogenated polystyrene resin. Examples of the polystyrene resin include styrene-butadiene-styrene block copolymer (SBS), styrene-isoprene-styrene block copolymer (SIS), styrene-ethylene-butylene-styrene block copolymer (SEBS), styrene-ethylene-propylene-styrene block copolymer (SEPS), styrene-ethylene-propylene-styrene block copolymer (SEEPS), styrene-butadiene-butylene-styrene block copolymer (SBBS), styrene-butadiene diblock copolymer, hydrogenated styrene-butadiene block copolymer, hydrogenated styrene-isoprene block copolymer, hydrogenated styrene-butadiene random copolymer, and styrene-maleic anhydride copolymer. Specific examples of the polystyrene resin include hydrogenated styrene thermoplastic elastomers "H1041", "Tuftec H1043", "Tuftec P2000", "Tuftec MP10" (manufactured by asahi chemical company), epoxidized styrene-butadiene thermoplastic elastomers "epofiend AT501", "CT310" (manufactured by macrocellulin company), modified styrene elastomers "SEPTON HG252" (manufactured by colali company) having hydroxyl groups, modified styrene elastomers "Tuftec N503M" having carboxyl groups, modified styrene elastomers "Tuftec N501" having amino groups, modified styrene elastomers "Tuftec M1913" having acid anhydride groups "(manufactured by asahi chemical company), unmodified styrene elastomers" SEPTON S8104 "(manufactured by colali company), and styrene-ethylene/butylene-styrene block copolymers" FG1924 "(manufactured by Kraton company)," EF-40 "(manufactured by CRAY VALLEY).

Among the above, the resin containing at least one structure selected from the polybutadiene structure and the poly (meth) acrylate structure in the molecule is preferable from the viewpoint of obtaining particularly good releasability as the (C) elastomer. Further, as the elastomer (C), a resin having a polybutadiene structure in the molecule is particularly preferable from the viewpoint of obtaining particularly good cutting properties.

(C) The elastomer may have functional groups capable of reacting with the (a) epoxy resin. (C) When the elastomer is reacted with the epoxy resin (a), the mechanical strength of the cured product layer obtained by curing the resin composition layer can be improved. The functional group capable of reacting with the (a) epoxy resin contains a functional group generated by heating. The functional group capable of reacting with the (a) epoxy resin may be a functional group of 1 or more selected from the group consisting of a hydroxyl group, a carboxyl group, an acid anhydride group, a phenolic hydroxyl group, an epoxy group, an isocyanate group and a urethane group. Among them, the functional group is preferably a hydroxyl group, an acid anhydride group, a phenolic hydroxyl group, an epoxy group, an isocyanate group and a urethane group, more preferably a hydroxyl group, an acid anhydride group, a phenolic hydroxyl group and an epoxy group, particularly preferably a phenolic hydroxyl group. The number average molecular weight (Mn) of the functional group-containing (C) elastomer is preferably more than 5000, and therefore the weight average molecular weight (Mw) of the (C) elastomer is also preferably more than 5000.

The amount of the elastomer (C) in the resin composition layer is preferably 1 mass% or more, more preferably 3 mass% or more, still more preferably 5 mass% or more, still more preferably 20 mass% or less, still more preferably 18 mass% or less, still more preferably 15 mass% or less, and particularly preferably 11 mass% or less, based on 100 mass% of the nonvolatile component in the resin composition layer. The amount of the (C) elastomer in the resin composition is preferably in the same range as the amount of the (C) elastomer in the resin composition layer with respect to 100 mass% of the nonvolatile component in the resin composition layer. In the resin sheet having the first specific parameter "P (a) ×p (b)/P (C)" and/or the second specific parameter "P (a)/P (d)" within the above range, when the amount of the (C) elastomer is within the above range, the dicing property and the peeling property can be particularly improved, and further, warpage of a member such as a semiconductor chip package having a cured product layer formed using the resin sheet can be generally effectively suppressed.

The amount of the elastomer (C) in the resin composition layer is preferably 10 mass% or more, more preferably 20 mass% or more, still more preferably 30 mass% or more, still more preferably 70 mass% or less, still more preferably 60 mass% or less, still more preferably 55 mass% or less, particularly preferably 52 mass% or less, based on 100 mass% of the resin component in the resin composition layer. The range of the amount of the (C) elastomer in the resin composition with respect to 100% by mass of the resin component in the resin composition is preferably the same as the aforementioned range of the amount of the (C) elastomer in the resin composition layer with respect to 100% by mass of the resin component in the resin composition layer. In the resin sheet having the first specific parameter "P (a) ×p (b)/P (C)" and/or the second specific parameter "P (a)/P (d)" within the above range, when the amount of the (C) elastomer is within the above range, the dicing property and the peeling property can be particularly improved, and further, warpage of a member such as a semiconductor chip package having a cured product layer formed using the resin sheet can be generally effectively suppressed.

((D) curing agent)

The resin composition layers and the resin compositions according to the first and second embodiments may contain (D) a curing agent as an arbitrary component. The curing agent (D) as the component (D) does not contain any substances belonging to the components (A) to (C). (D) The curing agent may have a function of reacting with the (a) epoxy resin to cure the resin composition.

Examples of the curing agent (D) include maleimide-based resins, carbodiimide-based resins, active ester-based resins, phenol-based resins, amine-based resins, acid anhydride-based resins, cyanate-based resins, benzoxazine-based resins, and thiol-based resins. Among them, maleimide-based resins, carbodiimide-based resins, active ester-based resins and phenol-based resins are preferable, and maleimide-based resins and carbodiimide-based resins are more preferable. (D) The curing agent may be used alone or in combination of 1 or more than 2.

As the maleimide-based resin, a compound having 1 or more, preferably 2 or more maleimide groups (2, 5-dihydro-2, 5-dioxo-1H-pyrrol-1-yl) in 1 molecule can be used. The maleimide-based resin may be reacted with the epoxy resin (a) in the presence of a suitable catalyst such as an imidazole-based curing accelerator to form a bond. In addition, since the maleimide-based resin can generate radical polymerization based on an ethylenic carbon-carbon unsaturated bond contained in a maleimide group, bonding can be performed even between maleimide-based resins. When the maleimide resin is used, the dicing property and the peeling property can be improved, and warpage of a member such as a semiconductor chip package having a cured product layer formed using a resin sheet can be effectively suppressed.

The maleimide-based resin may be an aliphatic maleimide-based resin having an aliphatic amine skeleton or an aromatic maleimide-based resin having an aromatic amine skeleton. Examples of commercial maleimide resins include maleimide resins containing an aliphatic skeleton having 36 carbon atoms derived from a dimer diamine, such as "BMI-3000J", "BMI-5000", "BMI-1400", "BMI-1500", "BMI-1700" and "BMI-689" (all manufactured by design molecule (Designer Molecules)), etc.; maleimide resins containing an indane skeleton described in Japanese patent application laid-open technical bulletin No. 2020-500211; maleimide resins containing an aromatic ring skeleton directly bonded to the nitrogen atom of a maleimide group, such as "MIR-3000-70MT" (manufactured by Japanese chemical Co., ltd.), "BMI-4000" (manufactured by Dai chemical Co., ltd.), "BMI-80" (manufactured by KI chemical Co., ltd.).

The amount of the maleimide-based resin in the resin composition layer is preferably 1 mass% or more, more preferably 2 mass% or more, still more preferably 3 mass% or more, still more preferably 15 mass% or less, still more preferably 10 mass% or less, still more preferably 5 mass% or less, based on 100 mass% of the nonvolatile component in the resin composition layer. The range of the amount of the maleimide-based resin in the resin composition with respect to 100% by mass of the nonvolatile matter in the resin composition is preferably the same as the aforementioned range of the amount of the maleimide-based resin in the resin composition layer with respect to 100% by mass of the nonvolatile matter in the resin composition layer. In the resin sheet having the first specific parameter "P (a) ×p (b)/P (c)" of the above range and/or the second specific parameter "P (a)/P (d)" of the above range, when the amount of the maleimide-based resin is within the above range, the dicing property and the peeling property can be made particularly good, and further, warpage of a member such as a semiconductor chip package having a cured product layer formed using the resin sheet can be generally effectively suppressed.

The amount of the maleimide-based resin in the resin composition layer is preferably 5 mass% or more, more preferably 10 mass% or more, still more preferably 15 mass% or more, still more preferably 40 mass% or less, still more preferably 30 mass% or less, still more preferably 20 mass% or less, based on 100 mass% of the resin component in the resin composition layer. The range of the amount of the maleimide-based resin in the resin composition with respect to 100% by mass of the resin component in the resin composition is preferably the same as the aforementioned range of the amount of the maleimide-based resin in the resin composition layer with respect to 100% by mass of the resin component in the resin composition layer. In the resin sheet having the first specific parameter "P (a) ×p (b)/P (c)" of the above range and/or the second specific parameter "P (a)/P (d)" of the above range, when the amount of the maleimide-based resin is within the above range, the dicing property and the peeling property can be made particularly good, and further, warpage of a member such as a semiconductor chip package having a cured product layer formed using the resin sheet can be generally effectively suppressed.

As the carbodiimide resin, a compound having 1 or more carbodiimide groups (-n=c=n-) in 1 molecule, preferably 2 or more carbodiimide groups can be used. The carbodiimide resin can react with the epoxy resin (a) to form a bond. In addition, the carbodiimide resin may react with a hydroxyl group (phenolic hydroxyl group) bonded to an aromatic ring, and thus may be bonded to a phenolic resin. When the carbodiimide-based resin is used, the dicing property and the peeling property can be improved, and warpage of a member such as a semiconductor chip package having a cured product layer formed using a resin sheet can be effectively suppressed.

Specific examples of the carbodiimide-based resin include aliphatic dicarboximides such as tetramethylene-bis (t-butylcarbodiimide) and cyclohexanedis (methylene-t-butylcarbodiimide); aromatic dicarboximides such as phenylene-bis (xylyl carbodiimide); aliphatic polycarbodiimides such as polyhexamethylene carbodiimide, polytrimethylhexamethylene carbodiimide, polycyclohexylene carbodiimide, poly (methylenedicyclohexyl carbodiimide) and poly (isophorone carbodiimide); and aromatic polycarbodiimides such as poly (phenylene carbodiimides), poly (naphthylene carbodiimides), poly (tolylene carbodiimides), poly (methyldiisopropylphenylene carbodiimides), poly (triethylphenylene carbodiimides), poly (diethylphenylene carbodiimides), poly (triisopropylphenylene carbodiimides), poly (diisopropylphenylene carbodiimides), poly (xylylene carbodiimides), poly (tetramethylxylylene carbodiimides), poly (methylenediphenylene carbodiimides), poly [ methylenebis (methylphenyl) carbodiimides ].

Examples of the commercially available carbodiimide-based resin include: "CARBODILITE V-02B", "CARBODILITE V-03", "CARBODILITE V-04K", "CARBODILITE V-05", "CARBODILITE V-07" and "CARBODILITE V-09" manufactured by Nisshini chemical Co., ltd; "Stabaxol P", "Stabaxol P400", "Hycasyl 510", manufactured by Rhein-Chemie, inc.

The amount of the carbodiimide-based resin in the resin composition layer is preferably at least 0.1 mass%, more preferably at least 0.2 mass%, even more preferably at least 0.5 mass%, even more preferably at most 10 mass%, even more preferably at most 7 mass%, even more preferably at most 4 mass%, and particularly preferably at most 2 mass%, based on 100 mass% of the nonvolatile component in the resin composition layer. The amount of the carbodiimide-based resin in the resin composition is preferably in the same range as the amount of the carbodiimide-based resin in the resin composition layer with respect to 100% by mass of the nonvolatile component in the resin composition layer. When the amount of the carbodiimide resin in the resin sheet having the first specific parameter "P (a) ×p (b)/P (c)" and/or the second specific parameter "P (a)/P (d)" within the above range falls within the above range, the dicing property and the peeling property can be particularly improved, and warpage of a member such as a semiconductor chip package having a cured product layer formed using the resin sheet can be more generally effectively suppressed.

The amount of the carbodiimide-based resin in the resin composition layer is preferably 1% by mass or more, more preferably 2% by mass or more, still more preferably 3% by mass or more, still more preferably 30% by mass or less, still more preferably 25% by mass or less, still more preferably 20% by mass or less, and particularly preferably 12% by mass or less, based on 100% by mass of the resin component in the resin composition layer. The range of the amount of the carbodiimide-based resin in the resin composition with respect to 100% by mass of the resin component in the resin composition is preferably the same as the range of the amount of the carbodiimide-based resin in the resin composition layer with respect to 100% by mass of the resin component in the resin composition layer. In the resin sheet having the first specific parameter "P (a) ×p (b)/P (c)" of the above range and/or the second specific parameter "P (a)/P (d)" of the above range, when the amount of the carbodiimide-based resin is within the above range, the dicing property and the peeling property can be particularly good, and further, warpage of a member such as a semiconductor chip package having a cured product layer formed using the resin sheet can be generally effectively suppressed.

As the active ester resin, a compound having 1 or more active ester groups in 1 molecule can be used. Among them, preferred as the active ester resin are compounds having 2 or more ester groups having high reactivity in 1 molecule, such as phenol esters, thiophenol esters, N-hydroxylamine esters, and esters of heterocyclic hydroxyl compounds. The active ester resin is preferably a resin obtained by condensation reaction of a carboxylic acid compound and/or a thiocarboxylic acid compound with a hydroxyl compound and/or a thiol compound. Particularly, from the viewpoint of improving heat resistance, an active ester resin obtained from a carboxylic acid compound and a hydroxyl compound is preferable, and an active ester resin obtained from a carboxylic acid compound and a phenol compound and/or a naphthol compound is more preferable. Examples of the carboxylic acid compound include benzoic acid, acetic acid, succinic acid, maleic acid, itaconic acid, phthalic acid, isophthalic acid, terephthalic acid, and pyromellitic acid. Examples of the phenol compound or the naphthol compound include hydroquinone, resorcinol, bisphenol a, bisphenol F, bisphenol S, phenolphthalein, methylated bisphenol a, methylated bisphenol F, methylated bisphenol S, phenol, o-cresol, m-cresol, p-cresol, catechol, α -naphthol, β -naphthol, 1, 5-dihydroxynaphthalene, 1, 6-dihydroxynaphthalene, 2, 6-dihydroxynaphthalene, dihydroxybenzophenone, trihydroxybenzophenone, tetrahydroxybenzophenone, phloroglucinol, dicyclopentadiene type diphenol compound, and Novolac (Phenolic Novolac). The "dicyclopentadiene type phenol compound" herein means a phenol compound obtained by condensing 2 molecules of phenol with 1 molecule of dicyclopentadiene.

Preferred examples of the active ester resin include active ester resins containing dicyclopentadiene type diphenol structure, active ester resins containing naphthalene structure, active ester resins containing an acetylate of a novolac resin, and active ester resins containing a benzoyl of a novolac resin. Among them, an active ester resin containing a naphthalene structure and an active ester resin containing a dicyclopentadiene type diphenol structure are more preferable. "dicyclopentadiene type diphenol structure" means a divalent structural unit formed from phenylene-dicyclopentylene-phenylene.

Examples of the commercially available active ester resins include "EXB9451", "EXB9460S", "EXB-8000L-65M", "EXB-8000L-65TM", "HPC-8000-65T", "HPC-8000H-65TM" (manufactured by DIC corporation); examples of the active ester resins having a naphthalene structure include "HP-B-8151-62T", "EXB-8100L-65T", "EXB-8150-60T", "EXB-8150-62T", "EXB-9416-70BK", "HPC-8150-60T", "HPC-8150-62T", "EXB-8" (manufactured by DIC); examples of the phosphorus-containing active ester resin include "EXB9401" (manufactured by DIC Co.); examples of the active ester resin of the acetylated compound of the novolac resin include "DC808" (manufactured by mitsubishi chemical company); examples of the active ester resins of the benzoyl compound of the novolac resin include "YLH1026", "YLH1030", "YLH1048" (manufactured by Mitsubishi chemical corporation); examples of the active ester resin containing a styrene group and a naphthalene structure include "PC1300-02-65MA" (manufactured by AIRWATER Co., ltd.).

As the phenol resin, a compound having 1 or more, preferably 2 or more hydroxyl groups (phenolic hydroxyl groups) bonded to an aromatic ring such as a benzene ring or naphthalene ring in 1 molecule can be used. From the viewpoints of heat resistance and water resistance, a phenol resin having a phenol structure (novolac structure) is preferable. In addition, from the viewpoint of adhesion, a nitrogen-containing phenol resin is preferable, and a phenol resin containing a triazine skeleton is more preferable. Among them, a novolac-type resin containing a triazine skeleton is preferable from the viewpoint of highly satisfying heat resistance, water resistance and adhesion.

Specific examples of the phenol resin include "MEH-7700", "MEH-7810", "MEH-7851" manufactured by Ming He Chemicals, and "NHN", "CBN", "GPH" manufactured by Japanese chemical Co., ltd., and "SN-170", "SN-180", "SN-190", "SN-475", "SN-485", "SN-495", "SN-375", "SN-395", and "LA-7052", "LA-7054", "LA-3018-50P", "LA-1356", "TD2090", "TD-2090-60M" manufactured by DIC.

As the amine resin, a compound having 1 or more, preferably 2 or more amino groups in 1 molecule can be used. Examples of the amine resin include aliphatic amines, polyether amines, alicyclic amines, aromatic amines, and the like, and among these, aromatic amines are preferable. The amine-based resin is preferably a primary amine or a secondary amine, more preferably a primary amine. As a specific example of the amine-based resin, examples thereof include 4,4' -methylenebis (2, 6-dimethylaniline), diphenyldiaminosulfone, 4' -diaminodiphenylmethane, 4' -diaminodiphenylsulfone, 3' -diaminodiphenylsulfone, m-phenylenediamine, m-xylylenediamine, diethyl toluenediamine, 4' -diaminodiphenyl ether, 3' -dimethyl-4, 4' -diaminobiphenyl, 2' -dimethyl-4, 4' -diaminobiphenyl, 3' -dihydroxybenzidine, 2-bis (3-amino-4-hydroxyphenyl) propane 3, 3-dimethyl-5, 5-diethyl-4, 4-diphenyl methane diamine, 2-bis (4-aminophenoxy) phenyl) propane, 2-bis (4- (4-aminophenoxy) phenyl) propane, 1, 3-bis (3-aminophenoxy) benzene, 1, 3-bis (4-aminophenoxy) benzene, 1, 4-bis (4-aminophenoxy) benzene, 4' -bis (4-aminophenoxy) biphenyl, bis (4- (4-aminophenoxy) phenyl) sulfone, bis (4- (3-aminophenoxy) phenyl) sulfone, and the like. As the amine resin, commercially available ones can be used, and examples thereof include "SEIKACURE-S" manufactured by SEIKA corporation; "KAYABOND C-200S", "KAYABOND C-100", "KAYAHARD A-A", "KAYAHARD A-B", "KAYAHARD A-S" manufactured by japan chemical company, and "Epicure W" manufactured by mitsubishi chemical company.

As the acid anhydride-based resin, a compound having 1 or more acid anhydride groups, preferably 2 or more acid anhydride groups, in 1 molecule can be used. Specific examples of the acid anhydride-based resin include phthalic anhydride, tetrahydrophthalic anhydride, hexahydrophthalic anhydride, methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, methylnadic anhydride, hydrogenated methylnadic anhydride, trialkyltetrahydrophthalic anhydride, dodecenyl succinic anhydride, 5- (2, 5-dioxotetrahydro-3-furyl) -3-methyl-3-cyclohexene-1, 2-dicarboxylic anhydride, trimellitic anhydride, pyromellitic anhydride, benzophenone tetracarboxylic dianhydride, biphenyl tetracarboxylic dianhydride, naphthalene tetracarboxylic dianhydride, oxydiphthalic dianhydride, 3'-4,4' -diphenyl sulfone tetracarboxylic dianhydride, 1, 3a,4,5,9 b-hexahydro-5- (tetrahydro-2, 5-dioxo-3-furyl) -naphtho [1,2-C ] furan-1, 3-dione, ethylene glycol bis (trimellitic anhydride ester), and styrene-maleic anhydride obtained by copolymerizing styrene and maleic acid. Examples of the commercial products of the acid anhydride-based resin include "HNA-100", "MH-700", "MTA-15", "DDSA", "OSA" manufactured by New Japan physical and chemical Co., ltd; "YH-306", "YH-307" manufactured by Mitsubishi chemical corporation; "HN-2200", "HN-5500" manufactured by Hitachi chemical Co., ltd; and "EF-30", "EF-40", "EF-60", "EF-80", manufactured by K Lei Weili.

As the cyanate resin, a compound having 1 or more cyanate groups, preferably 2 or more cyanate groups in 1 molecule can be used. Examples of the cyanate resin include: difunctional cyanate resins such as bisphenol a dicyanate, polyphenol cyanate, oligo (3-methylene-1, 5-phenylene cyanate), 4 '-methylenebis (2, 6-dimethylphenyl cyanate), 4' -ethylenediphenyl dicyanate, hexafluorobisphenol a dicyanate, 2-bis (4-cyanate-based) phenylpropane, 1-bis (4-cyanate-based phenylmethane), bis (4-cyanate-3, 5-dimethylphenyl) methane, 1, 3-bis (4-cyanate-phenyl-1- (methylethylene)) benzene, bis (4-cyanate-phenyl) sulfide, and bis (4-cyanate-based phenyl) ether; polyfunctional cyanate resins derived from phenol novolac resins, cresol novolac resins, and the like; prepolymers obtained by triazinizing a part of these cyanate resins, and the like. Specific examples of the cyanate ester resins include "PT30" and "PT60" manufactured by Lonza Japan (both are phenol novolac type multifunctional cyanate ester resins), "ULL-950S" (multifunctional cyanate ester resins), "BA230" and "BA230S75" (prepolymers in which part or all of bisphenol a dicyanates are triazinized to form trimers).

Specific examples of the benzoxazine-based resin include: "JBZ-OD100", "JBZ-OP100D", "ODA-BOZ" manufactured by JFE chemical Co., ltd; "P-d", "F-a" manufactured by Kagaku chemical industries Co., ltd; "HFB2006M" manufactured by Showa Polymer Co., ltd.

Specific examples of the thiol resin include trimethylolpropane tris (3-mercaptopropionate), pentaerythritol tetrakis (3-mercaptobutyrate), and tris (3-mercaptopropyl) isocyanurate.

(D) The reactive group equivalent of the curing agent is preferably 50g/eq to 3000g/eq, more preferably 100g/eq to 1000g/eq, still more preferably 100g/eq to 500g/eq, particularly preferably 100g/eq to 300g/eq. Reactive group equivalent means the mass of the resin per 1 equivalent of reactive group.

In one example, the weight average molecular weight (Mw) of the curing agent (D) may be 100 or more and 5000 or less.

When the number of epoxy groups of the epoxy resin (A) is 1, the range of the number of active groups of the curing agent (D) is preferably 0.01 or more, more preferably 0.1 or more, still more preferably 0.2 or more, still more preferably 10 or less, still more preferably 5 or less, still more preferably 3 or less. In the resin composition layer or the resin composition, "(a) the number of epoxy groups of the epoxy resin" means a value obtained by summing all values obtained by dividing the mass of the nonvolatile components of the (a) epoxy resin present in the resin composition layer or the resin composition by the epoxy equivalent. In the resin composition layer or the resin composition, "(D) the number of active groups of the curing agent" means a value obtained by summing all the values obtained by dividing the mass of the nonvolatile components of the curing agent (D) existing in the resin composition layer or the resin composition by the active group equivalent. In the resin sheet having the first specific parameter "P (a) ×p (b)/P (c)" and/or the second specific parameter "P (a)/P (D)" within the above range, when the number of active groups of the curing agent (D) is within the above range, the dicing property and the peeling property can be particularly improved, and further, warpage of a member such as a semiconductor chip package having a cured product layer formed using the resin sheet can be generally effectively suppressed.

The amount of the curing agent (D) in the resin composition layer is preferably 1 mass% or more, more preferably 2 mass% or more, still more preferably 3 mass% or more, still more preferably 40 mass% or less, still more preferably 30 mass% or less, still more preferably 20 mass% or less, based on 100 mass% of the nonvolatile component of the resin composition layer. The amount of the (D) curing agent in the resin composition is preferably in the same range as the amount of the (D) curing agent in the resin composition layer of 100 mass% relative to the nonvolatile component in the resin composition layer. In the resin sheet having the first specific parameter "P (a) ×p (b)/P (c)" and/or the second specific parameter "P (a)/P (D)" within the above range, when the amount of the (D) curing agent is within the above range, the dicing property and the peeling property can be particularly improved, and further, warpage of a member such as a semiconductor chip package having a cured product layer formed using the resin sheet can be generally effectively suppressed.

The amount of the curing agent (D) in the resin composition layer is preferably 5 mass% or more, more preferably 10 mass% or more, still more preferably 15 mass% or more, still more preferably 60 mass% or less, still more preferably 50 mass% or less, still more preferably 40 mass% or less, based on 100 mass% of the resin component of the resin composition layer. The amount of the (D) curing agent in the resin composition is preferably in the same range as the amount of the (D) curing agent in the resin composition layer in which the resin component is 100% by mass of the resin component in the resin composition layer. In the resin sheet having the first specific parameter "P (a) ×p (b)/P (c)" and/or the second specific parameter "P (a)/P (D)" within the above range, when the amount of the (D) curing agent is within the above range, the dicing property and the peeling property can be particularly improved, and further, warpage of a member such as a semiconductor chip package having a cured product layer formed using the resin sheet can be generally effectively suppressed.

((E) curing accelerator)

The resin composition layers and the resin compositions according to the first and second embodiments may contain (E) a curing accelerator as an optional component. The curing accelerator (E) as the component (E) does not contain any components (A) to (D). (E) The curing accelerator has a function as a curing catalyst for accelerating the curing of the (a) epoxy resin.

Examples of the curing accelerator (E) include phosphorus-based curing accelerators, urea-based curing accelerators, guanidine-based curing accelerators, imidazole-based curing accelerators, metal-based curing accelerators, and amine-based curing accelerators. Among them, imidazole-based curing accelerators are preferable. (E) The curing accelerator may be used alone or in combination of 1 or more than 2.

Examples of the phosphorus-based curing accelerator include aliphatic phosphonium salts such as tetrabutylphosphonium bromide, tetrabutylphosphonium chloride, tetrabutylphosphonium acetate, tetrabutylphosphonium decanoate, tetrabutylphosphonium laurate, bis (tetrabutylphosphonium) pyromellitic acid salt, tetrabutylphosphonium hexahydrophthalate hydrogen salt, tetrabutylphosphonium 2, 6-bis [ (2-hydroxy-5-methylphenyl) methyl ] -4-methylbenzophenolate salt, and di-t-butyldimethylphosphonium tetraphenylborate; aromatic phosphonium salts such as methyltriphenyl phosphonium bromide, ethyltriphenyl phosphonium bromide, propyltriphenyl phosphonium bromide, butyltriphenyl phosphonium bromide, benzyltriphenyl phosphonium chloride, tetraphenyl phosphonium bromide, p-tolyltrimethyl phosphonium tetra-p-tolylborate, tetraphenyl phosphonium tetraphenyl borate, tetraphenyl phosphonium tetra-p-tolylborate, triphenylethyl phosphonium tetraphenyl borate, tris (3-methylphenyl) ethyl phosphonium tetraphenyl borate, tris (2-methoxyphenyl) ethyl phosphonium tetraphenyl borate, (4-methylphenyl) triphenyl phosphonium thiocyanate, tetraphenyl phosphonium thiocyanate, butyltriphenyl phosphonium thiocyanate, and the like; aromatic phosphine-borane complexes such as triphenylphosphine-triphenylborane; aromatic phosphine-quinone addition reactants such as triphenylphosphine-p-benzoquinone addition reactant; aliphatic phosphines such as tributylphosphine, tri-t-butylphosphine, trioctylphosphine, di-t-butyl (2-butenyl) phosphine, di-t-butyl (3-methyl-2-butenyl) phosphine, and tricyclohexylphosphine; dibutyl phenyl phosphine, di-tert-butyl phenyl phosphine, methyl diphenyl phosphine, ethyl diphenyl phosphine, butyl diphenyl phosphine, diphenyl cyclohexyl phosphine, triphenyl phosphine, tri-o-tolyl phosphine, tri-m-tolyl phosphine, tri-p-tolyl phosphine, tri (4-ethylphenyl) phosphine, tri (4-propylphenyl) phosphine, tri (4-isopropylphenyl) phosphine, tri (4-butylphenyl) phosphine, tri (4-tert-butylphenyl) phosphine, tri (2, 4-dimethylphenyl) phosphine, tri (2, 5-dimethylphenyl) phosphine, tri (2, 6-dimethylphenyl) phosphine, tri (3, 5-dimethylphenyl) phosphine, tri (2, 4, 6-trimethylphenyl) phosphine, tri (2, 6-dimethyl-4-ethoxyphenyl) phosphine, tri (2-methoxyphenyl) phosphine, tri (4-ethoxyphenyl) phosphine, tri (4-tert-butoxyphenyl) phosphine, diphenyl-2-pyridyl phosphine, 1, 2-bis (diphenyl) phosphino-ethane, 1, 3-bis (diphenyl) phosphine, 2 '-diphenyl) phosphine, bis (2, 2' -diphenyl) phosphine, bis (2, 2-diphenyl) phosphine, etc.

Examples of the urea-based curing accelerator include 1, 1-dimethylurea; aliphatic dimethylureas such as 1, 3-trimethylurea, 3-ethyl-1, 1-dimethylurea, 3-cyclohexyl-1, 1-dimethylurea, and 3-cyclooctyl-1, 1-dimethylurea; 3-phenyl-1, 1-dimethylurea, 3- (4-chlorophenyl) -1, 1-dimethylurea, 3- (3, 4-dichlorophenyl) -1, 1-dimethylurea, 3- (3-chloro-4-methylphenyl) -1, 1-dimethylurea, 3- (2-methylphenyl) -1, 1-dimethylurea, 3- (4-methylphenyl) -1, 1-dimethylurea, 3- (3, 4-dimethylphenyl) -1, 1-dimethylurea, 3- (4-isopropylphenyl) -1, 1-dimethylurea, 3- (4-methoxyphenyl) -1, 1-dimethylurea, 3- (4-nitrophenyl) -1, 1-dimethylurea, 3- [4- (4-methoxyphenoxy) phenyl ] -1, 1-dimethylurea, 3- [4- (4-chlorophenoxy) phenyl ] -1, 1-dimethylurea, N- (1, 4-phenylene) bis (N ', N ' -dimethylurea, N- (4-dimethylphenyl) bis (N, N ' -dimethyltoluene) urea, etc.

Examples of the guanidine-based curing accelerator include dicyandiamide, 1-methylguanidine, 1-ethylguanidine, 1-cyclohexylguanidine, 1-phenylguanidine, 1- (o-tolylguanidine), dimethylguanidine, diphenylguanidine, trimethylguanidine, tetramethylguanidine, pentamethylguanidine, 1,5, 7-triazabicyclo [4.4.0] dec-5-ene, 7-methyl-1, 5, 7-triazabicyclo [4.4.0] dec-5-ene, 1-methylbiguanide, 1-ethylbiguanide, 1-n-butylbiguanide, 1-n-octadecylbiguanide, 1-dimethylbiguanide, 1-diethylbiguanide, 1-cyclohexylbiguanide, 1-allylbiguanide, 1-phenylbiguanide, and 1- (o-tolylguanide).

As the imidazole-based curing accelerator, there is used, examples thereof include 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1, 2-dimethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, and 1-cyanoethyl-2-undecylimidazolium trimellitate, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2, 4-diamino-6- [2' -methylimidazolyl- (1 ') ] -ethyl-s-triazine, 2, 4-diamino-6- [2' -undecylimidazolyl- (1 ') ] -ethyl-s-triazine, 2, 4-diamino-6- [2' -ethyl-4 ' -methylimidazolyl- (1 ') ] -ethyl-s-triazine, 2, 4-diamino-6- [2' -methylimidazolyl- (1 ') ] -ethyl-s-triazine isocyanurate, and, imidazole compounds such as 2-phenylimidazole isocyanuric acid adduct, 2-phenyl-4, 5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2, 3-dihydro-1H-pyrrolo [1,2-a ] benzimidazole, 1-dodecyl-2-methyl-3-benzylimidazolium chloride, 2-methylimidazoline, 2-phenylimidazoline, and adducts of imidazole compounds with epoxy resins. Examples of the commercially available imidazole-based curing accelerator include "1B2PZ", "2E4MZ", "2MZA-PW", "2MZ-OK", "2MA-OK-PW", "2PHZ-PW", "C11Z-CN", "C11Z-CNS", "C11Z-A" manufactured by Mitsubishi chemical corporation, and "P200-H50" manufactured by Mitsubishi chemical corporation.

Examples of the metal curing accelerator include organometallic complexes or organometallic salts of metals such as cobalt, copper, zinc, iron, nickel, manganese, and tin. Specific examples of the organometallic complex include cobalt (II) acetylacetonate, organic cobalt complexes such as cobalt (III) acetylacetonate, organic copper complexes such as copper (II) acetylacetonate, organic zinc complexes such as zinc (II) acetylacetonate, organic iron complexes such as iron (III) acetylacetonate, organic nickel complexes such as nickel (II) acetylacetonate, and organic manganese complexes such as manganese (II) acetylacetonate. Examples of the organic metal salt include zinc octoate, tin octoate, zinc naphthenate, cobalt naphthenate, tin stearate, and zinc stearate.

Examples of the amine-based curing accelerator include trialkylamines such as triethylamine and tributylamine, 4-dimethylaminopyridine, benzyldimethylamine, 2,4, 6-tris (dimethylaminomethyl) phenol, and 1, 8-diazabicyclo (5, 4, 0) -undecene. As the amine-based curing accelerator, commercially available products can be used, and examples thereof include "MY-25" manufactured by Weisu Fine chemical Co.

The amount of the (E) curing accelerator in the resin composition layer is preferably in the range of 0.01 mass% or more, more preferably 0.02 mass% or more, still more preferably 0.03 mass% or more, still more preferably 1.0 mass% or less, still more preferably 0.5 mass% or less, and still more preferably 0.1 mass% or less, relative to 100 mass% of the nonvolatile component of the resin composition layer. The amount of the (E) curing accelerator in the resin composition is preferably in the same range as the amount of the (E) curing accelerator in the resin composition layer, relative to 100% by mass of the nonvolatile component in the resin composition layer. In the resin sheet having the first specific parameter "P (a) ×p (b)/P (c)" of the above range and/or the second specific parameter "P (a)/P (d)" of the above range, when the amount of the (E) curing accelerator is within the above range, the dicing property and the peeling property can be particularly improved, and further, warpage of a member such as a semiconductor chip package having a cured product layer formed using the resin sheet can be generally effectively suppressed.

The amount of the curing accelerator (E) in the resin composition layer is preferably 0.01 mass% or more, more preferably 0.05 mass% or more, still more preferably 0.1 mass% or more, still more preferably 5 mass% or less, still more preferably 2 mass% or less, and still more preferably 1 mass% or less, based on 100 mass% of the resin component in the resin composition layer. The range of the amount of the (E) curing accelerator in the resin composition relative to 100% by mass of the resin component in the resin composition is preferably the same as the aforementioned range of the amount of the (E) curing accelerator in the resin composition layer relative to 100% by mass of the resin component in the resin composition layer. In the resin sheet having the first specific parameter "P (a) ×p (b)/P (c)" of the above range and/or the second specific parameter "P (a)/P (d)" of the above range, when the amount of the (E) curing accelerator is within the above range, the dicing property and the peeling property can be particularly improved, and further, warpage of a member such as a semiconductor chip package having a cured product layer formed using the resin sheet can be generally effectively suppressed.

((F) optional additives)

The resin composition layer and the resin composition according to the first and second embodiments may further contain any additive of (F) in combination with the above-described components (a) to (E) as any nonvolatile component. Examples of the optional additive (F) include: organocopper compounds, organozinc compounds, organocobalt compounds, and the like; leveling agents such as silicone leveling agents and acrylic polymer leveling agents; thickening agents such as swelling soil (Benton) and montmorillonite; an antifoaming agent such as an organosilicon antifoaming agent, an acrylic antifoaming agent, a fluorine antifoaming agent, and a vinyl resin antifoaming agent; ultraviolet absorbers such as benzotriazole-based ultraviolet absorbers; an adhesion improver such as urea silane; adhesion-imparting agents such as triazole-based adhesion-imparting agents, tetrazole-based adhesion-imparting agents, and triazine-based adhesion-imparting agents; antioxidants such as hindered phenol antioxidants; fluorescent whitening agents such as stilbene (stilbene) derivatives; a surfactant such as a fluorine-based surfactant and an organosilicon-based surfactant; flame retardants such as phosphorus flame retardants (for example, phosphate compounds, phosphazene compounds, phosphinic acid compounds, and red phosphorus), nitrogen flame retardants (for example, melamine sulfate), halogen flame retardants, and inorganic flame retardants (for example, antimony trioxide); a dispersant such as a phosphate dispersant, a polyoxyalkylene dispersant, an alkyne dispersant, a silicone dispersant, an anionic dispersant, and a cationic dispersant; borate-based stabilizer, titanate-based stabilizer, aluminate-based stabilizer, zirconate-based stabilizer, isocyanate-based stabilizer, carboxylic acid anhydride-based stabilizer, and the like. (F) Any additive may be used alone or in combination of at least 2 kinds.

((G) solvent)

The resin composition layers and the resin compositions according to the first and second embodiments generally further contain (G) a solvent as a volatile component in combination with the above-described nonvolatile components such as (a) to (F). The amount of the (G) solvent as the (G) component may be reflected as the mass reduction rate P (a) in the first specific parameter "P (a) ×p (b)/P (c)" and the second specific parameter "P (a)/P (d)". For example, the resin composition layer may be produced by forming a film of a liquid resin varnish containing (a) an epoxy resin, (B) an inorganic filler, and (G) a solvent, and drying the film. Most of the (G) solvent is removed by drying, but a part of the (G) solvent may remain in the resin composition layer. When the first specific parameter "P (a) ×p (b)/P (c)" including the mass reduction rate P (a) reflecting the amount of the thus-remaining (G) solvent is within the range satisfying the formula (1), and when the second specific parameter "P (a)/P (d)" including the mass reduction rate P (a) reflecting the amount of the thus-remaining (G) solvent is within the range satisfying the formula (2), both the cuttability and the peelability can be improved.

As the solvent (G), an organic solvent is generally used. Specific examples of the organic solvent include ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone; ester solvents such as methyl acetate, ethyl acetate, butyl acetate, isobutyl acetate, isoamyl acetate, methyl propionate, ethyl propionate, and γ -butyrolactone; ether solvents such as tetrahydropyran, tetrahydrofuran, 1, 4-dioxane, diethyl ether, diisopropyl ether, dibutyl ether, diphenyl ether, anisole, and the like; alcohol solvents such as methanol, ethanol, propanol, butanol, and ethylene glycol; ether ester solvents such as 2-ethoxyethyl acetate, propylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether acetate, carbitol acetate (ethyl diglycol acetate, diethylene glycol monoethyl ether acetate), γ -butyrolactone, methyl methoxypropionate, and the like; ester alcohol solvents such as methyl lactate, ethyl lactate, and methyl 2-hydroxyisobutyrate; ether alcohol solvents such as 2-methoxypropanol, 2-methoxyethanol, 2-ethoxyethanol, propylene glycol monomethyl ether, diethylene glycol monobutyl ether (butyl carbitol); amide solvents such as N, N-dimethylformamide, N-dimethylacetamide, and N-methyl-2-pyrrolidone; sulfoxide solvents such as dimethyl sulfoxide; nitrile solvents such as acetonitrile and propionitrile; aliphatic hydrocarbon solvents such as hexane, cyclopentane, cyclohexane and methylcyclohexane; aromatic solvents such as benzene, toluene, xylene, ethylbenzene, and trimethylbenzene. (G) The solvent may be used alone or in combination of 1 or more than 2.

From the viewpoint of controlling the mass reduction rate P (a) to an appropriate range, the (G) solvent has a preferable boiling point range. In detail, from the viewpoint of suppressing excessive volatilization of the (G) solvent from the resin composition layer and increasing the mass reduction rate P (a), the boiling point of the (G) solvent is preferably high. On the other hand, from the viewpoint of shortening the drying time of the resin varnish in the production process of the resin sheet and from the viewpoint of suppressing the residue of the (G) solvent after the curing of the resin composition layer, the boiling point of the (G) solvent is preferably low. The boiling point range of the specific (G) solvent may be affected by the combination of the (G) solvents used, but is preferably 30℃or higher, more preferably 40℃or higher, further preferably 50℃or higher, more preferably 280℃or lower, more preferably 260℃or lower, particularly preferably 240℃or lower. The boiling point can be measured by a boiling point rising instrument method or a distillation method as a boiling point at 1 atmosphere.

The amount of the solvent (G) may be set so that the first specific parameter "P (a) ×p (b)/P (c)" becomes a range satisfying the formula (1) and/or so that the second specific parameter "P (a)/P (d)" becomes a range satisfying the formula (2). In one example, the range of the specific amount of the (G) solvent with respect to 100 mass% of the resin composition layer may be the same as the range of the mass reduction rate P (a). In other examples, the range of the specific amount of the (G) solvent to 100% by mass of the resin composition may be the same as the range of the mass reduction rate P (a).

[ thickness of resin composition layer ]

The thickness of the resin composition layer may be set according to the use thereof. The specific range of the thickness of the resin composition layer is preferably 1 μm or more, more preferably 5 μm or more, still more preferably 10 μm or more, still more preferably 150 μm or less, still more preferably 120 μm or less, particularly preferably 100 μm or less.

[ film layer ]

The resin sheet according to the first and second embodiments may further include any layer combined with the resin composition layer. For example, the resin sheet may be provided with a film layer in contact with the resin composition layer. Typically, the resin composition layer is directly connected to the film layer. The resin composition layer is "directly" in contact with the film layer, and unless otherwise indicated, means that there are no other layers between the resin composition layer and the film layer.

Fig. 1 is a cross-sectional view schematically showing a resin sheet according to first and second embodiments of the present invention. As shown in fig. 1, the resin sheet 100 according to the first and second embodiments of the present invention may be provided with film layers 120 and 130 combined with a resin composition layer 110. These film layers 120 and 130 may be provided, for example, for supporting and protecting the resin composition layer 110. Hereinafter, the film layer 120 provided on one side of the resin composition layer 110 may be referred to as a "first film layer" 120, and the film layer 130 provided on the other side of the resin composition layer 110 may be referred to as a "second film layer" 130.

The first film layer 120 may be a film made of a plastic material, a metal foil, or a release paper, for example, and is preferably a film made of a plastic material or a metal foil.

In the case of using a film formed of a plastic material as the first film layer 120, examples of the plastic material include polyesters such as polyethylene terephthalate (hereinafter, sometimes abbreviated as "PET"), polyethylene naphthalate (hereinafter, sometimes abbreviated as "PEN"), and the like; polycarbonates (hereinafter sometimes simply referred to as "PCs"); acrylic polymers such as polymethyl methacrylate (hereinafter, abbreviated as "PMMA" in some cases); polyolefins such as polypropylene; cyclic polyolefin; triacetyl cellulose (hereinafter, abbreviated as "TAC" in some cases), polyether sulfide (hereinafter, abbreviated as "PES" in some cases), polyether ketone, polyimide, and the like. Among them, polyethylene terephthalate and polyethylene naphthalate are preferable, and particularly inexpensive polyethylene terephthalate is preferable.

In the case of using a metal foil as the first film layer 120, examples of the metal foil include copper foil and aluminum foil. Among them, copper foil is preferable. As the copper foil, a foil formed of a single metal of copper may be used, or a foil formed of an alloy of copper and other metals (for example, tin, chromium, silver, magnesium, nickel, zirconium, silicon, titanium, etc.) may be used.

The surface of the first film layer 120 bonded to the resin composition layer 110 may be subjected to a treatment such as a matting treatment, a corona treatment, or an antistatic treatment.

As the first film layer 120, a film layer with a release layer (not shown) having a release layer on a surface to be bonded to the resin composition layer 110 may be used. Examples of the release agent used for the release layer include one or more release agents selected from alkyd resins, polyolefin resins, polyurethane resins, and silicone resins. Examples of the commercial products of the release agent include "SK-1", "AL-5", "AL-7" manufactured by Amideraceae, which are alkyd resin release agents. Examples of the film layer having a release layer include "Lumirror T60" manufactured by ori corporation; "Purex" manufactured by Diman corporation; and "Unipel" manufactured by UNITKA corporation.

The range of the thickness of the first film layer 120 is preferably 5 μm or more, more preferably 10 μm or more, still more preferably 75 μm or less, and still more preferably 60 μm or less. When a film layer having a release layer is used, the thickness of the entire film layer having a release layer is preferably in the above range.

As the second film layer 130, for example, the same film layer as the first film layer 120 can be used. The second film layer 130 may be thinner than the first film layer 120, for example, the thickness of the second film layer 130 may range from 1 μm to 40 μm. When the first film layer 120 and the second film layer 130 are used in combination, one of the first film layer 120 and the second film layer 130 may function as a support for supporting the resin composition layer 110, and the other may function as a cover film layer for protecting the resin composition layer 110.

[ shape of resin sheet ]

The shape of the resin sheet according to the first and second embodiments is not limited. The resin sheet may have a blade shape, for example, or may have a long strip shape. The shape of the "long strip" refers to a shape of a film or sheet having a length of 10 times or more the width unless otherwise specified. The length is preferably 20 times or more the width, and specifically, may be a length of a degree that the sheet can be wound into a roll for storage or transportation. The upper limit of the length is not particularly limited, and may be, for example, 10 ten thousand times or less as large as the width.

[ method for producing resin sheet ]

The resin sheet can be produced, for example, by a production method including a step of preparing a resin composition and a step of applying the resin composition to an appropriate support surface. In this case, for example, the surface of the film layer can be used as the support surface. Among them, a production method comprising a step of producing a liquid resin varnish by dissolving the resin composition in the solvent (G) and a step of applying the resin varnish to a supporting surface is preferable. By using the solvent (G), the viscosity can be adjusted and the coatability can be improved. In the case of using a resin varnish, the resin varnish is usually dried after coating to form a resin composition layer.

The resin composition can be produced, for example, by mixing the above-described components. The above components may be mixed partially or completely at the same time or sequentially. The temperature can be set appropriately during the mixing of the components, so that heating and/or cooling can be performed temporarily or permanently. In addition, stirring or shaking may be performed during the mixing of the components.

The resin composition and the resin varnish can be applied by using an application device such as a die coater.

Drying may be performed by heating, hot air blowing, or the like. The drying condition is preferably set so as to obtain the first specific parameter "P (a) ×p (b)/P (c)" satisfying the formula (1) and/or the second specific parameter "P (a)/P (d)" satisfying the formula (2). For example, when a resin varnish containing 30 to 60 mass% of an organic solvent is used, a desired resin composition layer can be formed in many cases by drying at 50 to 150 ℃ for 3 to 10 minutes.

The method for producing a resin sheet may further include a step of bonding the resin composition layer to the film layer after the resin composition layer is obtained. For example, the method for producing a resin sheet may include a step of forming a resin composition layer on the surface of a first film layer and a step of bonding the formed resin composition layer to a second film layer.

[ Properties of resin sheet ]

The resin sheets according to the first and second embodiments can have excellent cuttability. Therefore, the chipping of the resin composition layer can be suppressed when the resin composition layer of the resin sheet is cut. In one example, when a test piece having a square planar shape is obtained by performing a cutting performance evaluation test for punching out a resin sheet using a 10cm square cutting tool, chipping of corner portions of a resin composition layer of the test piece can be reduced. Specifically, among the 4 corners of the test piece, it is preferable that the resin composition layer is not notched at 1 or more corners, and it is more preferable that the resin composition layer is not notched at all of the 4 corners. Specifically, the cutting property evaluation test can be performed by the method described in examples described below.

The resin sheets according to the first and second embodiments can have excellent peelability. Therefore, when the resin sheet has a film layer, the adhesion strength between the resin composition layer and the film layer can be suppressed, and the film layer can be smoothly peeled off. In one example, after a resin sheet having a resin composition layer and a film layer was laminated with a base material, a peeling property evaluation test was performed in which the film layer was peeled in the vertical direction at a speed of 50 mm/min. In the peeling property evaluation test, the amount of force (load) required for peeling the film layer is preferably 0.09kgf/cm or less, more preferably 0.06kgf/cm or less. The peeling property evaluation test can be specifically performed by the method described in examples described below.

The cured product layer can be obtained by curing the resin composition layer of the resin sheet. The cured product layer generally contains a cured product of the above-described resin composition, and preferably contains only the above-described resin composition. The resin composition layer is usually heated when it is cured. Therefore, among the components contained in the resin composition layer, the volatile components such as the (G) solvent can be volatilized by heat at the time of curing, while the non-volatile components such as the (a) to (F) components are not volatilized by heat at the time of curing. Accordingly, the cured product of the resin composition may contain a nonvolatile component of the resin composition or a reaction product thereof.

The cured product layer can be provided in a member such as a semiconductor chip package or a circuit board. In this case, the cured product layer obtained from the resin sheet can generally suppress warpage of the member. In one example, a cured layer having a thickness of 140 μm was formed on one surface of a 12-inch silicon wafer (thickness 775 μm) using a resin sheet, and a sample laminate was produced, and a warp evaluation test was performed. In the case of performing the warpage evaluation test, the warpage amount of the sample laminate can be preferably 1.0mm or less, more preferably 0.6mm or less. The warpage evaluation test can be specifically performed by the method described in examples described below.

The cured product layer obtained by curing the resin composition layer preferably has excellent dielectric characteristics. For example, the relative dielectric constant of the cured product layer is preferably 4.0 or less, more preferably 3.6 or less, particularly preferably 3.4 or less. The lower limit of the relative dielectric constant is not particularly limited, and may be, for example, 1.5 or more, 2.0 or more, or the like. For example, the dielectric loss tangent of the cured product layer is preferably 0.0100 or less, more preferably 0.0090 or less, still more preferably 0.0080 or less, particularly preferably 0.0070 or less. The lower limit of the dielectric loss tangent is not particularly limited, and may be, for example, 0.0010 or more. In one example, the relative permittivity and dielectric loss tangent of the cured product layer can be measured at a measurement frequency of 5.8GHz and a measurement temperature of 23℃by using a cavity perturbation method of "HP8362B" manufactured by Agilent technology (Agilent Technologies) company, using a cured product layer obtained by heating a resin composition layer at 190℃for 90 minutes.

The resin sheet described above can be used, for example, as a resin sheet for forming a sealing layer. In this case, the resin composition layer may be suitably used as the resin composition layer for the sealing layer. Among them, the resin composition layer of the resin sheet is preferably used as a resin composition layer for sealing a semiconductor (a resin composition layer for sealing a semiconductor), and more preferably used as a resin composition layer for sealing a semiconductor chip (a resin composition layer for sealing a semiconductor chip).

The resin sheet may be used for applications other than the application of forming a sealing layer, for example, as a resin sheet for forming an insulating layer. In this case, the resin composition layer can be used as a resin composition layer for forming an insulating layer of a semiconductor chip package (a resin composition layer for forming an insulating layer of a semiconductor chip package), and a resin composition layer for forming an insulating layer of a circuit board (including a printed wiring board) (a resin composition layer for forming an insulating layer of a circuit board). The insulating layer may include an interlayer insulating layer and a rewiring forming layer.

Examples of the semiconductor chip package include FC-CSP, MIS-BGA package, ETS-BGA package, fan-out WLP (wafer level package ), fan-in WLP, fan-out PLP (panel level package ), and fan-in PLP.

Further, the resin composition layer of the resin sheet is used for a wide range of applications using the resin composition layer, such as solder resist, die bonding material, hole filling resin, and part embedding resin.

Method for manufacturing semiconductor chip package

The use of the resin sheet enables the manufacture of semiconductor chip packages. Hereinafter, a third embodiment will be described with reference to a method for manufacturing the semiconductor chip package. A method for manufacturing a semiconductor chip package according to a third embodiment of the present invention includes:

A step (I) of cutting the resin composition layer of the resin sheet,

and (III) curing the resin composition layer.

(step (I) cutting step of the resin composition layer)

The method for manufacturing a semiconductor chip package according to the third embodiment includes a step (I) of cutting a resin composition layer of a resin sheet.

The step (I) preferably includes cutting the resin composition layer by pressing a blade in the thickness direction of the resin composition layer. In one example, the resin composition layer may be cut using a die cutter (die cutter) having a cylindrical roller rotatably provided in the circumferential direction and a blade provided on the circumferential surface of the roller. When a die-cutting machine is used, the resin sheet is conveyed in the same direction as the direction in which the die-cutting machine rotates while being brought into contact with the blade of the die-cutting machine. The resin composition layer of the conveyed resin sheet is pressed in the thickness direction, and the blade of the die-cutting machine is allowed to enter the resin composition layer, so that the resin composition layer can be cut by punching. In another example, the resin composition layer may be cut using a punching blade having a desired planar shape as viewed from the thickness direction of the resin composition layer. When a punching blade is used, the resin composition layer is pressed in the thickness direction by the punching blade, and the resin composition layer can be cut by punching. As shown in these examples, the resin sheet described above can effectively suppress chipping of the resin composition layer in the case where the resin composition layer is cut by blade punching.

Fig. 2 is a cross-sectional view schematically showing a resin sheet 100 after cutting a resin composition layer 110 in a method for manufacturing a semiconductor chip package according to a third embodiment of the present invention. As shown in fig. 2, the resin composition layer 110 having a planar shape corresponding to the shape of the blade can be obtained by the foregoing dicing. Hereinafter, among the portions of the resin composition layer 110 after dicing, the portion laminated with the base material (not shown) may be referred to as an "effective resin composition layer" 111, and the other portions may be referred to as "peripheral resin composition layers" 112. When the resin sheet 100 is used, generation of a notch in the resin composition layer 110 due to dicing can be suppressed. Therefore, the effective resin composition layer 111 having a desired shape can be obtained with high reliability.

In addition, in fig. 2, an example is shown in which the entire thickness direction of the resin composition layer 110 is cut, but the resin composition layer 110 may be partially cut in the thickness direction. By cutting at least a part of the resin composition layer 110 in the thickness direction, when forming a notch in at least a part of the resin composition layer 110 in the thickness direction, the peripheral resin composition layer 112 can be smoothly removed in the step (V) described later.

When the resin sheet 100 includes a film layer, the film layer may be cut in the step (I). For example, in the case where the second film layer 130 is provided between the resin composition layer 110 and the blade (not shown), in the step (I), not only the resin composition layer 110 but also the second film layer 130 is generally cut. At this time, the second film 130 may cut the entire film in the thickness direction thereof. Hereinafter, as shown in fig. 2, among the portions of the cut second film layer 130, the portion covering the effective resin composition layer 111 may be referred to as a "main portion" 131, and the other portions may be referred to as "peripheral portions" 132.

In the step (I), the film layer may not be cut. For example, in the case where the first film layer 120 is provided on the side opposite to the blade (not shown) with respect to the resin composition layer 110, the first film layer 120 may not be cut. In addition, as shown in fig. 2, the blade may partially enter the first film layer 120, partially cutting the first film layer 120 in the thickness direction.

Here, an example of using the long resin sheet 100 including the second film layer 130, the resin composition layer 110, and the first film layer 120 in this order from the blade side is shown. In this case, it is preferable to cut the resin composition layer 110 and the second film layer 130. In addition, the first film layer 120 may not be cut, but may also be partially cut in the thickness direction. However, the operation in the step (I) is not limited to the case shown in this example. For example, in the step (IV) described later, the step (I) may be performed after the second film layer 130 is peeled off, whereby the resin composition layer 110 of the resin sheet without the second film layer 130 is cut.

The effective resin composition layer 111 obtained by cutting the resin composition layer 110 in the step (I) generally has a planar shape corresponding to a substrate (not shown) on which the effective resin composition layer 111 is to be laminated. For example, the effective resin composition layer 111 may have the same planar shape as the base material, may have a planar shape larger than the base material, and may have a planar shape smaller than the base material. In a specific example, in the case of using a wafer having a circular planar shape as a base material, the resin composition layer 110 may be cut to obtain an effective resin composition layer 111 having a circular planar shape.

(step (IV) film layer peeling step)

The method for manufacturing a semiconductor chip package according to the third embodiment may include a step (IV) of peeling the film layer before the step (II). For example, a method for manufacturing a semiconductor chip package using a resin sheet having a first film layer and a second film layer generally includes a step (IV) of peeling one or both of the first resin sheet and the second film layer before the step (II). From the viewpoint of supporting and protecting the effective resin composition layer during transportation, it is preferable that only one of the first resin sheet and the second film layer is peeled off in the step (IV).

The step (IV) of peeling the film layer may be performed before the step (I) or after the step (I). Since the resin composition layer is cut in a state where the resin composition layer is supported by the film layer, the notch of the resin composition layer can be effectively suppressed, and therefore the step (IV) of peeling the film layer is preferably performed after the step (I).

As a method of peeling the first film layer, for example, a method of stretching and peeling the first film layer so as to separate it from the resin composition layer in a state where the second film layer and the resin composition layer are adsorbed by a vacuum adsorbent is exemplified.

On the other hand, as a method of peeling the second film layer, for example, a method of stretching and peeling the second film layer so as to separate from the resin composition layer in a state where the first film layer and the resin composition layer are adsorbed by a vacuum adsorbent is exemplified.

In addition, as in the example shown in fig. 2, in the case where the second film layer is cut in the step (I), the cut second film layer includes a main portion covering the effective resin composition layer and a peripheral portion covering the peripheral resin composition layer. Therefore, when step (IV) is performed after step (I), step (IV) may include peeling off a main portion of the second film layer or may include peeling off a peripheral portion of the second film layer. The peeling of the main portion and the peeling of the peripheral portion of the second film layer may be performed simultaneously or sequentially.

Examples of the method for peeling the main portion of the second film layer include a tape method and a vacuum adsorption method. For example, in the tape method, in general, a tape is attached to a main portion of the second film layer, and then the tape is peeled off. At this time, a main portion of the second film layer can be peeled together with the peeled adhesive tape.

As a method for peeling the peripheral portion of the second film layer, for example, a tape method, a vacuum adsorption method, or the like is given as the main portion. In addition, in the case of using a long resin sheet, the peripheral portion of the second film layer may be continuously formed in the conveyance direction of the resin sheet. Thus, for the peripheral portion of the second film layer, the peripheral portion may be mechanically stretch peeled. For example, by stretching the peripheral portion of the second film layer in such a manner as to be separated from the resin composition layer, the peripheral portion can be continuously peeled off.

When the resin sheet is used, the adhesion strength between the resin composition layer and the film layer is low, and therefore the film layer can be smoothly separated from the resin composition layer. Therefore, adhesion of a part or the whole of the effective resin composition layer to the film layer can be suppressed. Therefore, the occurrence of the defect that a part or the whole of the effective resin composition layer is peeled off together with the film layer can be suppressed, and the peeling of the film layer can be smoothly performed.

(step (V) peeling step of the peripheral resin composition layer)

The method for manufacturing a semiconductor chip package according to the third embodiment may include a step (V) of peeling the peripheral resin composition layer. The method for manufacturing a semiconductor chip package generally includes a step (V) of peeling off the peripheral resin composition layer after the step (I).

The peeling of the peripheral resin composition layer may be performed after the step (IV), or may be performed simultaneously with a part or all of the step (IV). For example, the peripheral resin composition layer may be peeled off simultaneously with the first film layer in the step (IV). Specifically, the stretching and peeling may be performed so that the first film layer and the peripheral resin composition layer are separated from the effective resin composition layer in a state where the main portion of the second film layer and the effective resin composition layer are adsorbed by a vacuum adsorbent.

In addition, for example, the peripheral resin composition layer may be peeled off simultaneously with the peeling off of the peripheral portion of the second film layer in the step (IV). Specifically, the peripheral portion of the second film layer and the peripheral resin composition layer may be stretched so as to be separated from the effective resin composition layer, and the peripheral portion of the second film layer and the peripheral resin composition layer may be peeled off.

Further, for example, the peripheral resin composition layer may be peeled separately from the peeling of the peripheral portions of the first film layer and the second film layer.

When the resin sheet is used, the adhesive strength between the resin composition layer and the film layer is low, and therefore the peripheral resin composition layer can be smoothly separated from the film layer. Therefore, it is possible to suppress adhesion of a part or the whole of the peripheral resin composition layer to the film layer. Therefore, the peeling of the peripheral resin composition layer can be smoothly performed.

(step (II) lamination step)

The method for manufacturing a semiconductor chip package according to the third embodiment includes a step (II) of laminating a resin sheet having an effective resin composition layer as a resin composition layer after dicing, and a base material. The lamination is performed in such a manner that the effective resin composition layer of the resin sheet is bonded to the substrate. By this lamination, an effective resin composition layer can be formed on the substrate.

The substrate preferably includes, for example, a substrate or a wafer. Examples of the substrate include: a glass substrate; metal substrates of copper, titanium, stainless steel, cold rolled steel Sheet (SPCC), and the like; a substrate obtained by impregnating glass fibers with an epoxy resin or the like and thermally curing the glass fibers, such as an FR-4 substrate; a substrate formed of bismaleimide triazine resin such as BT resin; polyimide substrates, and the like. Examples of the wafer include a semiconductor wafer such as a silicon wafer, a gallium arsenide (GaAs) wafer, an indium phosphide (InP) wafer, a gallium phosphide (GaP) wafer, a gallium nitride (GaN) wafer, a gallium telluride (GaTe) wafer, a zinc selenide (ZnSe) wafer, and a silicon carbide (SiC) wafer; a glass wafer; dummy wafers, etc. As the dummy wafer, for example, a plate-like member including a molding resin and an electronic component embedded in the molding resin can be used.

As the base material, the aforementioned substrate or wafer itself can be used. In addition, any member may be combined with a substrate or a wafer to be used as a base material. For example, a composite member having a temporary fixing film formed on the aforementioned substrate or wafer may be used as the base material. When a composite member having a temporary fixing film is used as a base material, the base material can be easily peeled off in a later process. The temporary fixing film is preferably a film that can be peeled off from the semiconductor chip and can temporarily fix the semiconductor chip. Examples of the temporary fixing film that is commercially available include "revapha" manufactured by the eastern electrician company.

A semiconductor chip may be disposed on the substrate. For example, in the case where the base material includes a temporary fixing film, the semiconductor chip may be temporarily fixed to the temporary fixing film. The temporary fixing of the semiconductor chip can be performed using, for example, a flip chip bonder (flip chip bonder), a die bonder (die bonder), or the like. The layout (layout) and the number of the semiconductor chips to be arranged may be appropriately set according to the shape and size of the temporary fixing film, the number of production of the semiconductor chip package to be targeted, and the like, and for example, the semiconductor chips may be arranged in a matrix of a plurality of rows and a plurality of columns to be temporarily fixed. When a semiconductor chip is provided on a substrate, the semiconductor chip is generally laminated so as to be embedded in an effective resin composition layer.

Lamination of the resin sheet and the base material can be performed, for example, by thermocompression bonding the resin sheet to the base material. As a member for thermocompression bonding the resin sheet to the base material (hereinafter, sometimes referred to as "thermocompression bonding member"), for example, a heated metal plate (SUS end plate (lens plate) or the like) or a metal roller (SUS roller or the like) may be mentioned. It is preferable that the resin sheet is pressed through an elastic material such as heat-resistant rubber so as to sufficiently conform to the surface irregularities of the base material without directly pressing the thermocompression bonding member against the resin base material.

Lamination of the base material and the resin sheet can be performed by, for example, vacuum lamination. The lamination conditions may be, for example, the conditions described below. The heating and pressing temperature is preferably 60 to 160 ℃, more preferably 80 to 140 ℃. The pressure of the thermocompression bonding is preferably in the range of 0.098MPa to 1.77MPa, more preferably 0.29MPa to 1.47 MPa. The heating and press-bonding time is preferably 20 seconds to 400 seconds, more preferably 30 seconds to 300 seconds. The lamination is preferably carried out under reduced pressure of 13hPa or less.

The lamination described above can be performed by a commercially available vacuum laminator. Examples of commercially available vacuum laminators include vacuum pressurized laminators manufactured by Kagaku Kogyo, vacuum applicators manufactured by Nikko-Materials, batch vacuum pressurized laminators, and full-automatic LC belt laminators manufactured by Leucadesco. When a wafer is used as a substrate, a laminator of a diaphragm type (diaphragm) is preferably used in order to suppress cracking of the wafer.

(step (VI)) a smoothing step

The method for manufacturing a semiconductor chip package according to the third embodiment may include a step (VI) of smoothing the effective resin composition layer after laminating the resin sheet and the base material in the step (II) and before curing the effective resin composition layer in the step (III). Specifically, the smoothing treatment for pressing the thermocompression bonding member against the resin sheet may be performed under normal pressure (atmospheric pressure) to smooth the effective resin composition layer. The pressing conditions for the smoothing treatment may be the same as those for the thermocompression bonding in the step (II) described above. The lamination in the step (II) and the smoothing treatment in the step (VI) may be performed continuously using a vacuum laminator.

(step (VII) film layer peeling step)

When the resin sheet laminated with the base material in the step (II) has a film layer, the method for manufacturing a semiconductor chip package according to the third embodiment may include a step (VII) of peeling off the film layer after the step (II). For example, as in the example shown in fig. 2, when a resin sheet having a first film layer and a second film layer is used, the resin sheet laminated with a base material may include one of the first film layer and the second film layer in step (II). Accordingly, the method of manufacturing a semiconductor chip package may include a process (VII) including peeling one of the first film layer and the second film layer. The step (VII) of peeling the film layer may be performed before the step (III) or after the step (III).

The method for peeling the film layer in the step (VII) is not particularly limited, and for example, the same method as the method for peeling the film layer in the step (IV) can be used. When the resin sheet is used, since the adhesion strength between the resin composition layer and the film layer is low, the occurrence of the defect that a part or the whole of the resin composition layer is peeled off together with the film layer can be suppressed, and the peeling of the film layer can be smoothly performed.

(step (III) curing step)

The method for manufacturing a semiconductor chip package according to the third embodiment includes a step (III) of laminating a resin sheet and a base material in step (II), and then curing an effective resin composition layer as a resin composition layer laminated on the base material. The curing of the effective resin composition layer is generally performed by thermal curing.

The heat curing conditions of the effective resin composition layer may vary depending on the kind of the resin composition, but the curing temperature is usually in the range of 120 to 240 ℃ (preferably 150 to 220 ℃, more preferably 170 to 200 ℃), and the curing time is in the range of 5 to 120 minutes (preferably 10 to 100 minutes, more preferably 15 to 90 minutes).

The pre-heating treatment of heating the effective resin composition layer at a temperature lower than the curing temperature may be performed before the effective resin composition layer is thermally cured. For example, the resin composition layer may be preheated for usually 5 minutes or more (preferably 5 minutes to 150 minutes, more preferably 15 minutes to 120 minutes) at a temperature of usually 50 ℃ or more and less than 120 ℃ (preferably 60 ℃ or more and 110 ℃ or less, more preferably 70 ℃ or more and 100 ℃ or less) before the effective resin composition layer is thermally cured.

By curing the effective resin composition layer, a cured product layer including a cured product of the resin composition can be formed on the substrate. Therefore, the semiconductor chip package having the cured product layer can be obtained by the above-described manufacturing method. Generally, the resulting semiconductor chip package includes a cured layer and a semiconductor chip. Further, the semiconductor chip package manufactured using the above resin sheet can generally suppress warpage.

In the semiconductor chip package, the cured layer can function as, for example, a sealing layer, an insulating layer, a solder resist layer, or the like. In one example, when a semiconductor chip is provided on a substrate, a semiconductor chip package including the semiconductor chip and a cured layer as a sealing layer for sealing the semiconductor chip can be obtained. Examples of such semiconductor chip packages include fan-out WLP, fan-in WLP, fan-out PLP, and fan-in PLP.

(optional step)

The method for manufacturing a semiconductor chip package according to the third embodiment may further include any step in combination with the above steps.

For example, the method for manufacturing a semiconductor chip package described above may be implemented as a manufacturing method including the following steps in order:

A step of temporarily fixing the semiconductor chip to the base material,

A step of forming a sealing layer on the semiconductor chip,

A step of peeling off the base material,

A step of forming a rewiring forming layer as an insulating layer on the surface of the semiconductor chip from which the base material is peeled, and

and forming a rewiring layer as a conductor layer on the rewiring layer.

For example, the method for manufacturing the semiconductor chip package may be implemented as a manufacturing method including the following steps in order:

a step of forming a rewiring forming layer as an insulating layer on a substrate

A step of forming a rewiring layer as a conductor layer on the rewiring layer,

A step of mounting a semiconductor chip on the rewiring forming layer so as to be electrically connected to the rewiring layer, and

and forming a sealing layer on the semiconductor chip.

In the manufacturing method according to these examples, the cured product layer is preferably applicable to a sealing layer and a rewiring forming layer. Accordingly, the step of forming the sealing layer and the step of forming the rewiring forming layer can be performed by a method including the steps (I) to (III) and the steps (IV) to (VII) described above, if necessary. In this case, the method for manufacturing a semiconductor chip package may further include any step required to function the cured layer as a sealing layer or a rewiring forming layer. Further, the method for manufacturing the semiconductor chip package may include any steps other than forming the sealing layer and the rewiring forming layer. These arbitrary steps will be described below.

The method for manufacturing the semiconductor chip package may include, as an optional step, a step of forming a hole such as a through hole or a via hole in the cured layer. Specifically, in the case of using a cured layer as an insulating layer such as a rewiring formation layer, a hole may be formed in the cured layer for interlayer connection between a conductor layer provided on one side of the cured layer and a conductor layer provided on the other side. Examples of the hole forming method include laser irradiation, etching, and mechanical drilling. In addition, the method for manufacturing the semiconductor chip package preferably includes a contamination removal step of removing contamination in the hole after the hole is formed.

The method for manufacturing the semiconductor chip package may include, for example, a step of roughening the cured layer as an optional step. The surface including the cured product layer in the pores may be roughened generally by the roughening treatment. Therefore, by roughening treatment, when the cured product layer is used as an insulating layer such as a rewiring formation layer, the adhesion strength between the cured product layer and the conductor layer can be improved. As the roughening treatment, any of dry and wet roughening treatments may be performed. Examples of the dry roughening treatment include plasma treatment. Examples of the wet roughening treatment include a method in which swelling treatment with a swelling liquid, roughening treatment with an oxidizing agent, and neutralization treatment with a neutralizing liquid are sequentially performed.

The method for manufacturing the semiconductor chip package may include, for example, a step of forming a conductor layer on the cured layer as an arbitrary step. The conductor layer can be used as a wiring, for example. In a specific example, when the cured layer is used as the rewiring forming layer, a conductor layer may be formed as the rewiring layer. The conductor material used for the conductor layer is not particularly limited. Examples of the conductor material included in the conductor layer include materials including one or more metals selected from gold, platinum, palladium, silver, copper, aluminum, cobalt, chromium, zinc, nickel, titanium, tungsten, iron, tin, and indium. As the conductor material, a single metal or an alloy may be used. As the alloy, for example, an alloy of two or more metals selected from the above metals (for example, a nickel-chromium alloy, a copper-nickel alloy, and a copper-titanium alloy) can be cited. Among them, chromium, nickel, titanium, aluminum, zinc, gold, palladium, silver, or copper as a single metal is preferable from the viewpoints of versatility of conductor layer formation, cost, and ease of pattern formation; and alloys of nickel-chromium alloys, copper-nickel alloys, copper-titanium alloys as alloys. Among them, a single metal of chromium, nickel, titanium, aluminum, zinc, gold, palladium, silver or copper is more preferable; and nickel-chromium alloys; particularly preferred is a single metal of copper. The conductor layer may have a single-layer structure, or may have a multilayer structure in which 2 or more single metal layers or alloy layers formed of different types of metals or alloys are stacked.

Examples of the method for forming the conductor layer include a plating method, a sputtering method, and a vapor deposition method. For example, a conductor layer having a desired wiring pattern can be formed by plating the surface of the cured layer by an appropriate method such as a half-addition method or a full-addition method. The material of the conductor layer may be a single metal or an alloy. The conductor layer may have a single-layer structure including only 1 layer, or may have a multilayer structure including two or more layers of different types of materials.

Here, an example of an embodiment in which a conductor layer is formed on a cured product layer will be described in detail. A plating seed layer is formed on the surface of the solidified layer by electroless plating. Next, a mask pattern is formed on the formed plating seed layer so as to expose a part of the plating seed layer, corresponding to the desired wiring pattern. An electrolytic plating layer is formed on the exposed plating seed layer by electrolytic plating, and then the mask pattern is removed. Then, the unnecessary plating seed layer is removed by etching or the like, whereby a conductor layer having a desired wiring pattern can be formed.

The formation of the cured product layer and the formation of the conductor layer may be repeated, and the cured product layer and the conductor layer may be alternately stacked (stacked).

The method for manufacturing a semiconductor chip package according to the third embodiment may include, for example, a step of polishing a cured layer as an arbitrary step. In one example, the method of manufacturing a semiconductor chip package may include a step of polishing a surface of the cured layer on the opposite side of the substrate. In another example, in the case of peeling the substrate as described later, the method for manufacturing the semiconductor chip package may include a step of polishing the surface of the cured product layer exposed by peeling the substrate. The polishing can improve the smoothness of the surface of the cured product layer. Examples of the polishing method include a chemical mechanical polishing method using a chemical mechanical polishing apparatus, a mechanical polishing method such as lapping, and a plane polishing method using a grindstone rotation.

The method for manufacturing the semiconductor chip package may include, for example, a step of mounting the semiconductor chip on the cured layer as an optional step. In a specific example, the method for manufacturing a semiconductor chip package may include a step of mounting a semiconductor chip on a cured layer so that the semiconductor chip can be connected to a conductor layer such as a rewiring layer formed on the cured layer. This step generally includes bonding the semiconductor chip to the cured layer so that the terminal electrode of the semiconductor chip and the conductor layer can be connected to each other by a conductor. The bonding method includes, for example, a method of bonding between the semiconductor chip and the cured layer via an insulating adhesive, a method of bonding the semiconductor chip to the cured layer by pressure bonding, a method of bonding the semiconductor chip by reflow (reflow), and the like, and may be other methods.

The method for manufacturing a semiconductor chip package according to the third embodiment may include, for example, a step of peeling off a base material as an arbitrary step. In a specific example, when a substrate including a temporary fixing film is used, the substrate can be peeled off. Examples of the method for peeling the substrate include a method in which the temporary fixing film is heated, foamed, or expanded to peel. In the method of peeling the temporary fixing film by heating, foaming or expanding, the heating condition is usually that the temporary fixing film is heated at 100 to 250℃for 1 to 90 seconds or 5 to 15 minutes. As a method for peeling the substrate, for example, a method of irradiating the temporary fixing film with ultraviolet rays through the substrate to reduce the adhesion of the temporary fixing film and peeling the temporary fixing film can be mentioned. In the method of peeling the temporary fixing film by decreasing the adhesion by irradiation with ultraviolet light, the irradiation amount of ultraviolet light is usually 10mJ/cm ² ～1000mJ/cm ² 。

The method for manufacturing a semiconductor chip package according to the third embodiment may include, for example, a step of forming a solder resist layer on a conductor layer such as a rewiring layer as an arbitrary step. As a material of the solder resist layer, any material having insulating properties can be used. Among them, a photosensitive resin composition and a thermosetting resin composition are preferable from the viewpoint of ease of manufacturing the semiconductor chip package. The solder resist layer may be formed by using a cured product layer obtained by curing the resin composition layer of the resin sheet.

The method for manufacturing a semiconductor chip package according to the third embodiment may include, for example, a step of performing bump processing for forming bumps as an arbitrary step. Bump processing may be performed by a method such as solder ball or solder plating (soldering).

The method for manufacturing a semiconductor chip package according to the third embodiment may include, for example, a step of dicing the semiconductor chip package into individual pieces as an arbitrary step.

Here, a more specific example of a method of manufacturing a semiconductor chip package will be described. In a specific example, the method including the steps (I) to (III) is performed such that a cured layer is formed on a substrate as a rewiring layer, and a conductor layer is formed on the cured layer as a rewiring layer. The cured product layer and the conductor layer may be formed in 1 layer or may be formed in 2 layers or more for stacking. Then, a semiconductor chip is mounted on the cured layer, and a sealing layer is formed to seal the semiconductor chip. The sealing layer can be produced using the above-described resin sheet. The substrate is peeled off as needed, and dicing is performed to obtain a semiconductor chip package.

In another specific example, a semiconductor chip is provided on a substrate, and a cured layer is formed as a sealing layer on the substrate by a method including the steps (I) to (III). Then, the substrate is peeled off. A rewiring forming layer and a rewiring layer are formed on the surface exposed by peeling the base material. The rewiring forming layer may be formed using the resin sheet described above. The rewiring formation layer and the rewiring layer may be formed of only 1 layer each, or may be formed of 2 or more layers for stacking. Then, dicing may be performed to obtain a semiconductor chip package.

In the manufacturing method according to these specific examples, 1 or 2 or more of the above-described steps may be combined and performed.

(method for manufacturing semiconductor chip Package Using Circuit Board)

The semiconductor chip package can be manufactured by a method including a step of manufacturing a circuit board by a circuit board manufacturing method described later and a step of mounting a semiconductor chip on the circuit board. Since the method for manufacturing a circuit board described later includes steps (I), (II) and (III), even by a method including the method for manufacturing a circuit board, a semiconductor chip package using the resin sheet can be manufactured. The resulting semiconductor chip package generally includes a cured layer and a semiconductor chip.

The step of mounting a semiconductor chip on a circuit board generally includes bonding the semiconductor chip on the circuit board so that terminal electrodes of the semiconductor chip can be conductively connected to circuit wirings of the circuit board. As the bonding conditions of the circuit board and the semiconductor chip, for example, conditions used in flip-chip mounting of the semiconductor chip can be employed. For example, the semiconductor chip and the circuit board may be bonded to each other with an insulating adhesive interposed therebetween.

As an example of the bonding method, a method of crimping a semiconductor chip to a circuit board is given. The pressure conditions are such that the pressure temperature is usually in the range of 120 to 240 ℃ (preferably 130 to 200 ℃, more preferably 140 to 180 ℃), and the pressure time is usually in the range of 1 to 60 seconds (preferably 5 to 30 seconds).

Further, as another example of the bonding method, a method of bonding a semiconductor chip to a circuit board by reflow soldering is given. The reflow conditions may be in the range of 120 deg.c to 300 deg.c.

After bonding the semiconductor chip to the circuit substrate, the semiconductor chip may be filled with a molded underfill material.

Method for manufacturing circuit board

The circuit board can be manufactured using the resin sheet described above. Hereinafter, a method for manufacturing the circuit board will be described with reference to a fourth embodiment. A method for manufacturing a circuit board according to a fourth embodiment of the present invention includes:

a step (I) of cutting the resin composition layer of the resin sheet,

and (III) curing the resin composition layer.

In the method for manufacturing a circuit board according to the fourth embodiment, the step (I) of cutting the resin composition layer of the resin sheet may be performed in the same manner as the step (I) of the method for manufacturing a semiconductor chip package described above. According to the step (I) of the method for manufacturing a circuit board according to the fourth embodiment, the same advantages as the step (I) of the method for manufacturing a semiconductor chip package can be obtained.

The method for manufacturing a circuit board according to the fourth embodiment may include the step (IV) of peeling the film layer and the step (V) of peeling the peripheral resin composition layer, similarly to the method for manufacturing the semiconductor chip package described above. The steps (IV) and (V) in the method of manufacturing a circuit board may be performed in the same manner as the steps (IV) and (V) in the method of manufacturing a semiconductor chip package. According to the steps (IV) and (V) of the method for manufacturing a circuit board according to the fourth embodiment, the same advantages as the steps (IV) and (V) of the method for manufacturing a semiconductor chip package can be obtained.

The method for manufacturing a circuit board according to the fourth embodiment includes a step (II) of laminating a resin sheet having an effective resin composition layer as a resin composition layer after dicing with a base material. The lamination is performed in such a manner that the effective resin composition layer of the resin sheet is bonded to the substrate. By this lamination, an effective resin composition layer can be formed on the substrate.

Examples of the base material include glass epoxy substrates, metal substrates, polyester substrates, polyimide substrates, BT resin substrates, and thermosetting polyphenylene ether substrates. In addition, the substrate may have a metal layer such as copper foil on the surface as a part of the substrate. For example, a substrate having peelable metal layers (a first metal layer and a second metal layer) on both surfaces can also be used. In the case of using such a base material, a conductor layer which is a wiring layer capable of functioning as a circuit wiring can be formed on a surface of the second metal layer opposite to the first metal layer. Examples of the material of the metal layer include copper foil, copper foil with a carrier, and the material of the conductor layer described above, and copper foil is preferable. Examples of the substrate having a metal layer include an ultra-Thin copper foil with carrier copper foil "Micro Thin" manufactured by Mitsui metal mining company. The substrate may have a conductor layer on one or both sides thereof, which may be patterned. Intermediate manufactures to be further formed into insulating layers and/or conductor layers in manufacturing the circuit substrate are also included in the aforementioned "base material". When a circuit board with built-in components is manufactured as a circuit board, a base material with built-in components can be used.

Lamination of the resin sheet and the base material can be performed, for example, by thermocompression bonding the resin sheet to the base material. The specific lamination method and conditions may be the same as the step (II) of the above-described method for manufacturing a semiconductor chip package.

The method for manufacturing a circuit board according to the fourth embodiment may include a step (VI) of smoothing the effective resin composition layer and a step (VII) of peeling the film layer, similarly to the method for manufacturing the semiconductor chip package described above. The steps (VI) and (VII) in the method for manufacturing a circuit board may be performed in the same manner as the steps (VI) and (VII) in the method for manufacturing a semiconductor chip package described above, respectively. According to the steps (VI) and (VII) of the method for manufacturing a circuit board according to the fourth embodiment, the same advantages as the steps (VI) and (VII) of the method for manufacturing a semiconductor chip package can be obtained.

The method for manufacturing a circuit board according to the fourth embodiment includes a step (III) of laminating a resin sheet and a base material in step (II), and then curing an effective resin composition layer that is a resin composition layer laminated on the base material. The step (III) of the method for manufacturing a circuit board according to the fourth embodiment may be performed in the same manner as the step (III) of the method for manufacturing a semiconductor chip package described above. By curing the effective resin composition layer, a cured product layer including a cured product of the resin composition can be formed on the substrate. Therefore, the above-described manufacturing method can provide a circuit board having a cured layer. The circuit board manufactured using the above resin sheet can generally suppress warpage.

In the circuit board, the cured product layer can function as an insulating layer, a sealing layer, a solder resist layer, or the like, for example.

The method for manufacturing a circuit board according to the fourth embodiment may further include any step in combination with the above steps.

The method for manufacturing a circuit board may include, for example, a step of polishing the cured product layer. The method for manufacturing a circuit board may include, for example, a step of forming a hole such as a through hole or a via hole in the cured product layer. In addition, after the holes are formed, a contamination removal process may be performed. The method for manufacturing a circuit board may include, for example, a step of roughening the cured product layer. The method for manufacturing a circuit board may include, for example, a step of forming a conductor layer on a cured layer. These arbitrary steps can be performed in the same manner as the steps described in the above method for manufacturing a semiconductor chip package.

The method for manufacturing a circuit board may include a step of peeling off a base material, for example. In specific examples, the step of peeling the substrate can be performed using a substrate having a peelable metal layer. When the base material is removed, a circuit board having a cured layer and a conductor layer embedded in the cured layer can be manufactured.

The method for manufacturing a circuit board may be, for example, a method in which the above steps are repeated to manufacture a circuit board having a multilayer structure such as a multilayer printed wiring board.

In the method for manufacturing a circuit board, the same steps as those described in the method for manufacturing a semiconductor chip package can be performed.

Semiconductor device

The semiconductor device includes the semiconductor chip package or the circuit board. Examples of the semiconductor device include various semiconductor devices used for electric products (for example, computers, mobile phones, smartphones, tablet devices, wearable devices, digital cameras, medical instruments, televisions, and the like) and vehicles (for example, motorcycles, automobiles, electric trains, ships, aircraft, and the like).

Examples

Hereinafter, the present invention will be specifically described with reference to examples, but the present invention is not limited to these examples. In the following description, "parts" and "%" indicating amounts refer to "parts by mass" and "% by mass", respectively, unless otherwise specified. The operations described below are performed in the atmosphere at normal temperature and normal pressure (25 ℃ C., 1 atm), unless otherwise specified.

< raw materials list >)

The raw materials of the resin compositions used in the following examples and comparative examples are as follows.

(A) The components are as follows:

aliphatic triglycidyl ether (EX-321L, 130g/eq epoxy equivalent, manufactured by Nagase ChemteX corporation.)

Phenol benzopyrrolone type epoxy resin (WHR 991S, manufactured by Japanese chemical Co., ltd., epoxy equivalent 265 g/eq.).

(B) The components are as follows:

inorganic filler 1: spherical silica (average particle diameter 1 μm, specific surface area 4.5 m) surface-treated with an aminosilane-based coupling agent (KBM 573, made by Xinyue chemical industries Co., ltd.) ² /g, manufactured by Yadama corporation, "SO-C4").

(C) The components are as follows:

hydroxyl group-containing acrylic polymer (ARUFON UH-2000, manufactured by Toyama Synthesis Co., ltd., "weight average molecular weight 11000, glass transition temperature-55 ℃ C.).

(D) The components are as follows:

bisphenol A diphenyl ether bismaleimide (BMI-4000, manufactured by Dahe chemical industry Co., ltd., "maleimide group equivalent 285g/eq., 50% by mass solids toluene solution)

Carbodiimide resin (V-03 manufactured by Niqing textile chemical Co., ltd., active group equivalent of about 216g/eq., toluene solution having a solid content of 50% by mass)

Active ester resin (HPC-8000-65T, available from DIC Co., ltd., "active group equivalent weight 223g/eq.," toluene solution with 65% by mass solid content)

Novolac resin (MEK solution with hydroxyl equivalent of about 105g/eq., 60% solids content, "TD-2090-60M", manufactured by DIC Co.).

(E) The components are as follows:

imidazole curing accelerator (MEK solution of "1B2PZ", 1-benzyl-2-phenylimidazole, solid content 5% by mass, manufactured by Sichuang chemical industry Co.).

Production example 1. Production of elastomer 1 >

In a reaction vessel, 50G of difunctional hydroxyl-terminated polybutadiene (number average molecular weight: 5047 (GPC method), hydroxyl equivalent=1800G/eq., solid content 100% by mass: G-3000, manufactured by Cauda corporation, japan), 23.5G of an aromatic hydrocarbon-based mixed solvent (150G of Izole, manufactured by Bright Petroleum chemical Co., ltd.) and 0.005G of dibutyltin laurate were mixed and uniformly dissolved. After the mixture was homogenized, the temperature was raised to 50℃and 4.8g of toluene-2, 4-diisocyanate (isocyanate group equivalent: 87.08 g/eq.) was added thereto with stirring, followed by a reaction for about 3 hours. Subsequently, after the reaction mixture was cooled to room temperature, 8.96g of benzophenone tetracarboxylic dianhydride (acid anhydride equivalent: 161.1 g/eq.) and 0.07g of triethylenediamine and 40.4g of diethylene glycol monoethyl ether acetate (ethyl diglycol acetate) (manufactured by macrocelluloid corporation) were added thereto, and the mixture was heated to 130℃with stirring to carry out a reaction for about 4 hours. 2250cm by FT-IR ^-1 Is confirmed by the disappearance of the NCO peak of (a). The reaction was cooled to room temperature and filtered through a 100-mesh filter cloth, with the disappearance of NCO peak being regarded as the end point of the reaction, to obtain elastomer 1 (nonvolatile matter 50 mass%) having an imide structure, a urethane structure, and a polybutadiene structure. The number average molecular weight of the obtained elastomer 1 was 13700.

[ description of examples 1-1 to 1-11 and comparative examples 1-1 to 1-6 corresponding to the first specific parameters ]

Example 1-1 >

4 parts of aliphatic triglycidyl ether (EX-321L, epoxy equivalent 130g/eq, manufactured by Nagase ChemteX corporation) and 2 parts of phenol benzopyrrolone type epoxy resin (WHR 991S, epoxy equivalent 265g/eq, manufactured by japan chemical company) were dissolved in 8 parts of MEK under heating while stirring to obtain a resin solution. The resin solution was cooled to room temperature. Then, 20 parts of elastomer 1 (nonvolatile component 50% by mass), 2 parts of active ester resin (HPC-8000-65T, active group equivalent of about 223g/eq., toluene solution with 65% by mass of solid component), 1.5 parts of novolac resin (TD-2090-60M, hydroxyl equivalent of about 105g/eq., MEK solution with 60% by mass of solid component), 8 parts of bisphenol A diphenyl ether bismaleimide (BMI-4000, maleimide group equivalent of 285g/eq., toluene solution with 50% by mass of solid component), 2 parts of carbodiimide resin (V-03, toluene solution with about 216g/eq, active group equivalent of 50% by mass of solid component), 2 parts of imidazole curing accelerator (MEK solution with 5% by mass of quadruplex industrial Co., 1B2PZ, 1-benzyl 2-phenylimidazole) and MEK with 5% by mass of solid component, 1 part of a filler, and 10 parts of a spin-in a high-speed inorganic filler were mixed uniformly by an inorganic mixer. Then, the mixture was filtered through a cartridge filter (SHP 020 manufactured by ROKITECHNO Co., ltd.) to prepare a resin varnish.

As the first film layer, a polyethylene terephthalate film (LUMIRROR R80, manufactured by Toli Co., ltd., thickness 38 μm, softening point 130 ℃ C.) which had been subjected to a mold release treatment with an alkyd resin mold release agent (manufactured by Lein Co., ltd. "AL-5") was prepared. The first film layer was coated with a resin varnish by a die coater (die coater) so that the thickness of the dried resin composition layer became 70 μm, and dried at 85 to 100℃to obtain a resin sheet comprising the first film layer and the resin composition layer. The drying time was set so that the mass reduction rate P (a) of the resin composition layer measured by the method shown in < measurement of mass reduction rate by heating at 190 ℃ described later > became the value of table 1.

Examples 1-2 >

The amount of the inorganic filler 1 was changed to 93 parts. The drying time after the application of the resin varnish was changed so that the mass reduction rate P (a) of the resin composition layer measured by the method shown in < measurement of mass reduction rate by heating at 190 ℃ described later > became the value of table 1. Except for the above, a resin varnish and a resin sheet were produced in the same manner as in example 1-1.

Examples 1 to 3 >

The amount of the inorganic filler 1 was changed to 110 parts. The drying time after the application of the resin varnish was changed so that the mass reduction rate P (a) of the resin composition layer measured by the method shown in < measurement of mass reduction rate by heating at 190 ℃ described later > became the value of table 1. Except for the above, a resin varnish and a resin sheet were produced in the same manner as in example 1-1.

Examples 1 to 4 >

The amount of the inorganic filler 1 was changed to 75 parts. The drying time after the application of the resin varnish was changed so that the mass reduction rate P (a) of the resin composition layer measured by the method shown in < measurement of mass reduction rate by heating at 190 ℃ described later > became the value of table 1. Except for the above, a resin varnish and a resin sheet were produced in the same manner as in example 1-1.

Examples 1 to 5 >

The amount of the aliphatic triglycidyl ether "EXL-321L" was changed to 2 parts. In addition, the amount of the elastomer 1 (nonvolatile matter 50 mass%) was changed to 26 parts. Further, the drying time after the application of the resin varnish was changed so that the mass reduction rate P (a) of the resin composition layer measured by the method shown in < measurement of mass reduction rate by heating at 190 ℃ described later > became the value of table 1. Except for the above, a resin varnish and a resin sheet were produced in the same manner as in example 1-1.

Examples 1 to 6 >

The amount of the phenol benzopyrrolidone type epoxy resin "WHR991S" was changed to 3 parts. In addition, the amount of the elastomer 1 (nonvolatile matter 50 mass%) was changed to 14 parts. Further, the amount of the novolac resin "TD-2090-60M" (solid content 60%) was changed to 2 parts. The drying time after the application of the resin varnish was changed so that the mass reduction rate P (a) of the resin composition layer measured by the method shown in < measurement of mass reduction rate by heating at 190 ℃ described later > became the value of table 1. Except for the above, a resin varnish and a resin sheet were produced in the same manner as in example 1-1.

Examples 1 to 7 >

20 parts of elastomer 1 (nonvolatile matter: 50% by mass) was changed to 8 parts of a hydroxyl group-containing acrylic polymer (ARUFON UH-2000, manufactured by east Asia Synthesis Co., ltd., "weight average molecular weight: 11000, glass transition temperature: 55 ℃ C.). The drying time after the application of the resin varnish was changed so that the mass reduction rate P (a) of the resin composition layer measured by the method shown in < measurement of mass reduction rate by heating at 190 ℃ described later > became the value of table 1. Except for the above, a resin varnish and a resin sheet were produced in the same manner as in example 1-1.

Examples 1 to 8 >

The amount of the active ester resin "HPC-8000-65T" (65% by mass as a solid matter) was changed to 1.2 parts. The amount of the carbodiimide-based resin "V-03" (solid content: 50 mass%) was changed to 3 parts. Further, the drying time after the application of the resin varnish was changed so that the mass reduction rate P (a) of the resin composition layer measured by the method shown in < measurement of mass reduction rate by heating at 190 ℃ described later > became the value of table 1. Except for the above, a resin varnish and a resin sheet were produced in the same manner as in example 1-1.

Examples 1 to 9 >

The novolac resin "TD-2090-60M" was not used, and the amount of the carbodiimide-based resin "V-03" (solid content 50 mass%) was changed to 8 parts. The drying time after the application of the resin varnish was changed so that the mass reduction rate P (a) of the resin composition layer measured by the method shown in < measurement of mass reduction rate by heating at 190 ℃ described later > became the value of table 1. Except for the above, a resin varnish and a resin sheet were produced in the same manner as in example 1-1.

Examples 1 to 10 >

The amount of the active ester resin "HPC-8000-65T" (65% by mass of solid content) was changed to 3 parts, and the carbodiimide resin "V-03" was not used. The drying time after the application of the resin varnish was changed so that the mass reduction rate P (a) of the resin composition layer measured by the method shown in < measurement of mass reduction rate by heating at 190 ℃ described later > became the value of table 1. Except for the above, a resin varnish and a resin sheet were produced in the same manner as in example 1-1.

Examples 1 to 11 >

Bisphenol A diphenyl ether bismaleimide "BMI-4000" was not used and the amount of MEK finally mixed was changed to 14 parts. The drying time after the application of the resin varnish was changed so that the mass reduction rate P (a) of the resin composition layer measured by the method shown in < measurement of mass reduction rate by heating at 190 ℃ described later > became the value of table 1. Except for the above, a resin varnish and a resin sheet were produced in the same manner as in example 1-1.

Comparative example 1-1 >

The amount of the elastomer 1 (nonvolatile matter 50% by mass) was changed to 36 parts. The drying time after the application of the resin varnish was changed so that the mass reduction rate P (a) of the resin composition layer measured by the method shown in < measurement of mass reduction rate by heating at 190 ℃ described later > became the value of table 2. Except for the above, a resin varnish and a resin sheet were produced in the same manner as in example 1-1.

Comparative examples 1-2 >

The amount of elastomer 1 (nonvolatile matter 50 mass%) was changed to 4 parts. The drying time after the application of the resin varnish was changed so that the mass reduction rate P (a) of the resin composition layer measured by the method shown in < measurement of mass reduction rate by heating at 190 ℃ described later > became the value of table 2. Except for the above, a resin varnish and a resin sheet were produced in the same manner as in example 1-1.

Comparative examples 1 to 3

The amount of the inorganic filler 1 was changed to 120 parts. The drying time after the application of the resin varnish was changed so that the mass reduction rate P (a) of the resin composition layer measured by the method shown in < measurement of mass reduction rate by heating at 190 ℃ described later > became the value of table 2. Except for the above, a resin varnish and a resin sheet were produced in the same manner as in example 1-1.

Comparative examples 1 to 4

The amount of the inorganic filler 1 was changed to 63 parts. The drying time after the application of the resin varnish was changed so that the mass reduction rate P (a) of the resin composition layer measured by the method shown in < measurement of mass reduction rate by heating at 190 ℃ described later > became the value of table 2. Except for the above, a resin varnish and a resin sheet were produced in the same manner as in example 1-1.

Comparative examples 1 to 5

A resin varnish and a resin sheet were produced in the same manner as in example 1-1, except that the drying time after the application of the resin varnish was changed so that the mass reduction rate P (a) of the resin composition layer measured by the method shown in < measurement of mass reduction rate by heating at 190 ℃ described later > became the value of table 2.

Comparative examples 1 to 6

< determination of mass reduction Rate based on 190 ℃ heating >

Cutting resin sheet into 10cm square, placing into a desiccator (desiccator) together with sufficiently dried silica gel, standing for 30 min, and measuring mass M ₀ . From the mass M ₀ Subtracting the mass of the first film layer contained in the resin sheet to obtain the mass m of the resin composition layer before heating ₀ (＝M ₀ -mass of the first film layer). After the resin sheet was heated at 190℃for 30 minutes and just after being left to cool in the dryer for 30 minutes together with the silica gel as well, the mass M was measured again ₁ . From mass M ₀ Subtracting mass M ₁ The mass reduction Δm by heating was obtained. Since the first film layer used in the above examples and comparative examples does not contain a component such as a solvent that volatilizes when heated at 190 ℃ for 30 minutes, the mass reduction Δm represents not only the mass reduction of the resin sheet but also the mass reduction of the resin composition layer. Dividing the mass decrease ΔM by the mass M of the resin composition layer before heating ₀ The mass reduction rate P (a) [%]。

< measurement of elongation and elastic modulus after heating at 130 >

The resin sheet was heated at 130℃for 30 minutes, and the first film layer was peeled off to obtain a cured product for evaluation. The cured product for evaluation was cut into dumbbell type 1 pieces to obtain test pieces. The test piece was subjected to tensile strength measurement using a tensile tester "RTC-1250A" manufactured by Orientec corporation, to obtain elongation [% ] and tensile elastic modulus [ GPa ] at 25 ℃. The measurement was performed in accordance with JIS K7127. This operation was performed 3 times, and the average value was calculated. The average value of the elongation [% ] is used as the parameter P (b), and the average value of the tensile elastic modulus is used as the parameter P (c).

< test for evaluation of cutting Property >)

As a second film layer, an OPP film (biaxially oriented polypropylene film, "MA-411" manufactured by Oji F-Tex Co., ltd., thickness of 15 μm) was prepared. The resin sheet and the second film layer were bonded to each other at 40℃using a roll laminator so that the resin composition layer and the second film layer were joined to each other, to obtain a multilayer sample sheet having a layer structure of a first film layer/a resin composition layer/a second film layer. The multilayered test piece was punched out using a 10cm square cutting tool manufactured by DUMBBELL corporation. The square multilayer test piece obtained by punching was observed, and the resin composition layer was evaluated for notch easiness (cuttability). Since the chipping of the resin composition layer due to punching is likely to occur at the corner portion where the blade of the cutting tool contacts, the smaller the chipping of the corner portion of the resin composition layer, the more excellent the cutting property.

Evaluation criterion of the cutting property:

"good" is shown in the following description: the 4 corners of the multilayer test piece are not notched with the resin composition layer;

"DELTA": gaps with resin composition layers are arranged at 1-3 corners of the multilayer sample piece;

"×": the multilayered test piece had notches in the resin composition layers at the 4 corners.

< test for evaluating peelability >

A glass cloth base epoxy resin double-sided copper-clad laminate having copper foil on the surface (copper foil thickness: 18 μm, substrate thickness: 0.8mm, manufactured by Songshi Co., ltd. "R-1766") was prepared. The roughening treatment was performed on both surfaces by etching with a microetching agent (CZ 8101, MEC) so that the copper etching amount became 2 μm. The copper-clad laminate thus obtained is referred to as a "roughened copper-clad laminate".

Resin sheets were laminated on the roughened copper-clad laminate using a batch vacuum press laminator (build-up laminator "CVP700" manufactured by Nikko-Materials Co.). The lamination is performed such that the resin composition layer of the resin sheet is bonded to the roughened copper-clad laminate. The lamination is performed by the following means: the pressure was reduced to 13hPa or less for 30 seconds, and then the mixture was pressure-bonded at 100℃under a pressure of 0.74MPa for 30 seconds.

A cut mark surrounding a portion having a width of 10mm and a length of 100mm was cut into the first film layer of the resin sheet. One end of the portion was peeled off and held by a jig (AUTO COM type test machine "AC-50C-SL" manufactured by TSE Co.), and a load (kgf/cm) at a speed of 50 mm/min at room temperature when peeled off in the vertical direction by 20mm was measured to determine the peel strength as the adhesion strength of the first film layer to the resin composition layer.

The peel strength mentioned above indicates the amount of force required to peel the resin composition layer from the first film layer. Therefore, the smaller the peel strength is, the smaller the adhesion strength between the resin composition layer and the film layer is, and thus the film layer can be peeled smoothly. Therefore, the smaller the peel strength, the more effectively the defect of the resin composition layer caused by the peeling of the film layer can be suppressed, and the more excellent the peelability is.

Evaluation criterion of peelability:

"good" is shown in the following description: the peel strength is 0.06kgf/cm or less;

"DELTA": the peel strength is 0.07kgf/cm to 0.09kgf/cm;

"×": the peel strength is 0.1kgf/cm or more.

< test for evaluation of warpage >

The resin sheet was laminated on the entire single side of a 12-inch silicon wafer (thickness 775 μm) using a batch vacuum press laminator. The lamination is performed such that the resin composition layer is bonded to the silicon wafer. The first film layer of the resin sheet is peeled off to expose the resin composition layer. Further, a resin sheet is laminated on the surface of the exposed resin composition layer, and the first film layer is peeled off. By the lamination, 2 resin composition layers (total thickness 140 μm) were formed on one side of a 12-inch silicon wafer. The lamination is performed by: the pressure was reduced for 30 seconds to a pressure of 13hPa or less, and then the pressure was applied at 100℃under a pressure of 0.74MPa for 30 seconds.

The resin composition layer was cured by heating at 100℃for 30 minutes in an oven, followed by heating at 190℃for 90 minutes, to obtain a sample laminate having a layer structure of "silicon wafer/cured product layer". The resulting sample laminate was placed on the upper surface of a horizontal base. The end of the sample laminate was pressed against the upper surface of the base. The distance between the "end of the silicon wafer opposite to the pressed end" and the "upper surface of the susceptor" was measured as the warpage amount. The warpage was evaluated according to the following criteria. The smaller the warpage amount, the more effective the warpage suppression is indicated.

Evaluation criterion of warpage:

"good" is shown in the following description: the warpage is 0mm or more and 0.6mm or less;

"DELTA": the warpage is greater than 0.6mm and less than 1.0 mm;

"×": the warpage is greater than 1.0mm.

< result >

The results of the foregoing examples and comparative examples are shown in the following table. In the following table, the amounts of the respective components represent parts by mass of the nonvolatile components.

TABLE 1

TABLE 1 results for the examples

Examples	1-1	1-2	1-3	1-4	1-5	1-6	1-7	1-8	1-9	1-10	1-11
												(A)EX-321L	4	4	4	4	2	4	4	4	4	4	4
(A)WHR991S	2	2	2	2	2	3	2	2	2	2	2
												(B) Inorganic filler 1	85	93	110	75	85	85	85	85	85	85	85
(C) Elastomer 1	10	10	10	10	13	7		10	10	10	10
												(C)UH-2000							8
(D)BMI-4000	4	4	4	4	4	4	4	4	4	4
												(D)V-03	1	1	1	1	1	1	1	1.5	4		1
(D)HPC-8000	1.3	1.3	1.3	1.3	1.3	1.3	1.3	0.8	1.3	2	1.3
												(D)TD-2090	0.9	0.9	0.9	0.9	0.9	1.2	0.9	0.9		0.9	0.9
(E)1B2PZ	0.05	0.05	0.05	0.05	0.05	0.05	0.05	0.05	0.05	0.05	0.05
												Inorganic filler amount (wt%)	78.5	80.0	82.6	76.3	77.8	79.8	80.0	78.5	77.0	78.7	81.5
Parameters (parameters)
												P(a)[％]	1.5	1..5	1.5	1.5	1.5	1.5	1.5	1.5	1.5	1.5	1..5
P(b)[％]	1.3	1.2	0.9	1.4	1.5	0.9	1.1	1.3	1.1	1.4	1.2
												P(c)[Gpa]	10	11	15	9	9	12	12	11	12	9	13
P(a)×P(b)/P(c)	0.195	0.164	0.090	0.233	0.250	0.113	0.138	0.177	0.138	0.233	0.138
												Cutting property	○	○	Δ	○	○	○	Δ	○	○	○	○
Peel strength [ kgf/cm ]]	0.05	0.04	0.02	0.0 8	0.07	0.04	0.06	0.05	0.09	0.05	0.04
												Strippability of	○	○	○	Δ	Δ	○	○	○	Δ	○	○
Warp of	○	○	○	Δ	○	Δ	○	○	○	Δ	Δ

。

TABLE 2

TABLE 2 results of comparative examples

Comparative example	1-1	1-2	1-3	1-4	1-5	1-6
							(A)EX-321L	4	4	4	4	4	4
(A)WHR991S	2	2	2	2	2	2
							(B) Inorganic filler 1	85	85	120	63	85	85
(C) Elastomer 1	18	2	10	10	10	10
							(C)UH-2000
(D)BMI-4000	4	4	4	4	4	4
							(D)V-03	1	1	1	1	1	1
(D)HPC-8000	1.3	1.3	1.3	1.3	1.3	1.3
							(D)TD-2090	0.9	0.9	0.9	0.9	0.9	0.9
(G)1B2PZ	0.05	0.05	0.05	0.05	0.05	0.05
							Inorganic filler amount (wt%)	73.1	84.8	83.8	73.0	78.5	78.5
Parameters (parameters)
							P(a)[％]	1.5	1.5	1.5	1.5	2.5	0.5
P(b)[％]	1.7	0.7	0.7	1.5	1.3	1.3
							P(c)[Gpa]	7	15	17	7	10	10
P(a)×P(b)/P(c)	0.364	0.070	0.062	0.321	0.325	0.065
							Cutting property	○	×	×	○	○	×
Peel strength [ kgf/cm ]]	0.15	0.03	0.01	0.14	0.18	0.02
							Strippability of	×	○	○	×	×	○
Warp of	○	×	○	×	○	○

。

[ description of examples 2-1 to 2-11 and comparative examples 2-1 to 2-6 corresponding to the second specific parameters ]

< example 2-1>

A resin varnish and a resin sheet were produced by the same method as in example 1-1, except that the drying time after the application of the resin varnish was set so that the mass reduction rate P (a) of the resin composition layer measured by the method shown in < measurement of mass reduction rate based on heating at 190 ℃ became the value of table 3.

Example 2-2 >

The amount of the inorganic filler 1 was changed to 93 parts. The drying time after the application of the resin varnish was changed so that the mass reduction rate P (a) of the resin composition layer measured by the method shown in < measurement of mass reduction rate based on 190 ℃ heating > became the value of table 3. Except for the above, a resin varnish and a resin sheet were produced in the same manner as in example 2-1.

Examples 2 to 3 >

The amount of the inorganic filler 1 was changed to 110 parts. The drying time after the application of the resin varnish was changed so that the mass reduction rate P (a) of the resin composition layer measured by the method shown in < measurement of mass reduction rate based on 190 ℃ heating > became the value of table 3. Except for the above, a resin varnish and a resin sheet were produced in the same manner as in example 2-1.

Examples 2 to 4 >

The amount of the inorganic filler 1 was changed to 75 parts. The drying time after the application of the resin varnish was changed so that the mass reduction rate P (a) of the resin composition layer measured by the method shown in < measurement of mass reduction rate based on 190 ℃ heating > became the value of table 3. Except for the above, a resin varnish and a resin sheet were produced in the same manner as in example 2-1.

Examples 2 to 5 >

The amount of the aliphatic triglycidyl ether "EXL-321L" was changed to 2 parts. In addition, the amount of the elastomer 1 (nonvolatile matter 50 mass%) was changed to 26 parts. Further, the drying time after the coating of the resin varnish was changed so that the mass reduction rate P (a) of the resin composition layer measured by the method shown in < measurement of mass reduction rate based on 190 ℃ heating > became the value of table 3. Except for the above, a resin varnish and a resin sheet were produced in the same manner as in example 2-1.

Examples 2 to 6 >

The amount of the phenol benzopyrrolidone type epoxy resin "WHR991S" was changed to 3 parts. In addition, the amount of the elastomer 1 (nonvolatile matter 50 mass%) was changed to 14 parts. Further, the amount of the novolac resin "TD-2090-60M" (solid content 60%) was changed to 2 parts. The drying time after the application of the resin varnish was changed so that the mass reduction rate P (a) of the resin composition layer measured by the method shown in < measurement of mass reduction rate based on 190 ℃ heating > became the value of table 3. Except for the above, a resin varnish and a resin sheet were produced in the same manner as in example 2-1.

Examples 2 to 7 >

20 parts of elastomer 1 (nonvolatile matter: 50% by mass) was changed to 8 parts of a hydroxyl group-containing acrylic polymer (ARUFON UH-2000, manufactured by east Asia Synthesis Co., ltd., "weight average molecular weight: 11000, glass transition temperature: 55 ℃ C.). The drying time after the application of the resin varnish was changed so that the mass reduction rate P (a) of the resin composition layer measured by the method shown in < measurement of mass reduction rate based on 190 ℃ heating > became the value of table 3. Except for the above, a resin varnish and a resin sheet were produced in the same manner as in example 2-1.

Examples 2 to 8 >

The amount of the active ester resin "HPC-8000-65T" (65% by mass as a solid matter) was changed to 1.2 parts. The amount of the carbodiimide-based resin "V-03" (solid content: 50 mass%) was changed to 3 parts. Further, the drying time after the coating of the resin varnish was changed so that the mass reduction rate P (a) of the resin composition layer measured by the method shown in < measurement of mass reduction rate based on 190 ℃ heating > became the value of table 3. Except for the above, a resin varnish and a resin sheet were produced in the same manner as in example 2-1.

Examples 2 to 9 >

The amount of the carbodiimide-based resin "V-03" (solid content: 50 mass%) was changed to 8 parts without using the novolac resin "TD-2090-60M". The drying time after the application of the resin varnish was changed so that the mass reduction rate P (a) of the resin composition layer measured by the method shown in < measurement of mass reduction rate based on 190 ℃ heating > became the value of table 3. Except for the above, a resin varnish and a resin sheet were produced in the same manner as in example 2-1.

Examples 2 to 10

The amount of the active ester resin "HPC-8000-65T" (65% by mass of solid content) was changed to 3 parts, and the carbodiimide resin "V-03" was not used. The drying time after the application of the resin varnish was changed so that the mass reduction rate P (a) of the resin composition layer measured by the method shown in < measurement of mass reduction rate based on 190 ℃ heating > became the value of table 3. Except for the above, a resin varnish and a resin sheet were produced in the same manner as in example 2-1.

Examples 2 to 11 >

The amount of MEK finally mixed was changed to 14 parts without bisphenol a diphenyl ether bismaleimide "BMI-4000". The drying time after the application of the resin varnish was changed so that the mass reduction rate P (a) of the resin composition layer measured by the method shown in < measurement of mass reduction rate based on 190 ℃ heating > became the value of table 3. Except for the above, a resin varnish and a resin sheet were produced in the same manner as in example 2-1.

Comparative example 2-1 >

The amount of the elastomer 1 (nonvolatile matter 50% by mass) was changed to 36 parts. The drying time after the application of the resin varnish was changed so that the mass reduction rate P (a) of the resin composition layer measured by the method shown in < measurement of mass reduction rate based on 190 ℃ heating > became the value of table 4. Except for the above, a resin varnish and a resin sheet were produced in the same manner as in example 2-1.

Comparative example 2-2 >

The amount of elastomer 1 (nonvolatile matter 50 mass%) was changed to 4 parts. The drying time after the application of the resin varnish was changed so that the mass reduction rate P (a) of the resin composition layer measured by the method shown in < measurement of mass reduction rate based on 190 ℃ heating > became the value of table 4. Except for the above, a resin varnish and a resin sheet were produced in the same manner as in example 2-1.

Comparative examples 2-3

The amount of the inorganic filler 1 was changed to 120 parts. The drying time after the application of the resin varnish was changed so that the mass reduction rate P (a) of the resin composition layer measured by the method shown in < measurement of mass reduction rate based on 190 ℃ heating > became the value of table 4. Except for the above, a resin varnish and a resin sheet were produced in the same manner as in example 2-1.

Comparative examples 2 to 4

The amount of the inorganic filler 1 was changed to 63 parts. The drying time after the application of the resin varnish was changed so that the mass reduction rate P (a) of the resin composition layer measured by the method shown in < measurement of mass reduction rate based on 190 ℃ heating > became the value of table 4. Except for the above, a resin varnish and a resin sheet were produced in the same manner as in example 2-1.

Comparative examples 2 to 5

A resin varnish and a resin sheet were produced in the same manner as in example 2-1, except that the drying time after the application of the resin varnish was changed so that the mass reduction rate of the resin composition layer measured by the method shown in < measurement of mass reduction rate based on heating at 190 ℃ > became the value of table 4.

Comparative examples 2 to 6

A resin varnish and a resin sheet were produced in the same manner as in example 2-1, except that the drying time after the application of the resin varnish was changed so that the mass reduction rate P (a) of the resin composition layer measured by the method shown in < measurement of mass reduction rate based on 190 ℃ heating > became the value of table 4.

< determination of mass reduction Rate based on 190 ℃ heating >

The mass reduction rate P (a) [% ] of the resin composition layer was measured by the same method as that of the measurement method in examples 1-1 to 1-11 and comparative examples 1-1 to 1-6.

< measurement of Vickers hardness after heating at 130 ]

The resin sheet was heated at 130℃for 30 minutes, and the first film layer was peeled off to obtain a cured product for evaluation. The Vickers hardness P (d) [ HV ] of the cured product for evaluation was measured using a Vickers hardness tester (product name HM200, sanfeng Co., ltd.) under a measurement load of 0.1 kgf.

< test for evaluation of cutting Property >)

The cuttability was evaluated by the same method as in the cuttability evaluation test in examples 1-1 to 1-11 and comparative examples 1-1 to 1-6.

< test for evaluating peelability >

The peelability was evaluated by the same method as in the peelability evaluation test in examples 1-1 to 1-11 and comparative examples 1-1 to 1-6.

< test for evaluation of warpage >

Warpage was evaluated by the same method as in the warpage evaluation test in examples 1-1 to 1-11 and comparative examples 1-1 to 1-6.

< results >

TABLE 3

TABLE 3 results for the examples

TABLE 4

TABLE 4 results of comparative examples

Comparative example	2-1	2-2	2-3	2-4	2-5	2-6
							(A)EX-321L	4	4	4	4	4	4
(A)WHR991S	2	2	2	2	2	2
							(B) Inorganic filler 1	85	85	120	63	85	85
(C) Elastomer 1	18	2	10	10	10	10
							(C)UH-2000
(D)BMI-4000	4	4	4	4	4	4
							(D)V-03	1	1	1	1	1	1
(D)HPC8000	1.3	1.3	1.3	1.3	1.3	1.3
							(D)TD-2090	0.9	0.9	0.9	0.9	0.9	0.9
(E)1B2PZ	0.05	0.05	0.05	0.05	0.05	0.05
							Inorganic filler amount [ wt ]]	73.1	84.8	83.8	73.0	78.5	78.5
Parameters (parameters)
							P(a)[％]	1.5	1.5	1.5	1.5	2.5	0.5
P(d)[HV]	30	110	107	35	45	60
							P(a)/P(d)	0.050	0.014	0.014	0.043	0.056	0.008
Cutting property	○	×	×	○	○	×
							Peel strength [ kgf/cm ]]	0.15	0.03	0.01	0.14	0.18	0.02
Strippability of	×	○	○	×	×	○
							Warp of	○	×	○	×	○	○

。

The same experiments as those of examples 1-1 to 1-11 and examples 2-1 to 2-11 were conducted by changing the thickness of the resin composition layer in the range of 1 μm to 150 μm, and it was confirmed that the same results as those of examples 1-1 to 1-11 and examples 2-1 to 2-11 were ascribed to the differences in the degree.

It was confirmed that the same results as in examples 1-1 to 1-11 and examples 2-1 to 2-11 were obtained even when the components (C) to (G) were not contained, although the degree was different.

Description of symbols

100. Resin sheet

110. Resin composition layer

111. Effective resin composition layer

112. Peripheral resin composition layer

120. First film layer

130. Second film layer

131. Major part of the second film layer

132. A peripheral portion of the second film layer.

Claims

1. A resin sheet comprising a resin composition layer, wherein,

the resin composition layer satisfies the following formula (1),

0.09≤P(a)×P(b)/P(c)≤0.3 (1)

in the formula (1), the amino acid sequence of the formula (1),

p (b) represents the elongation (%) measured at a measurement temperature of 25℃after heating the resin composition layer at 130℃for 30 minutes, and P (c) represents the tensile elastic modulus (GPa) measured at a measurement temperature of 25℃after heating the resin composition layer at 130℃for 30 minutes.

2. A resin sheet comprising a resin composition layer, wherein,

the resin composition layer satisfies the following formula (2),

0.015≤P(a)/P(d)≤0.04 (2)

in the formula (2), the amino acid sequence of the formula (2),

3. The resin sheet according to claim 1 or 2, wherein the resin composition layer comprises (C) an elastomer.

4. The resin sheet according to claim 1 or 2, wherein the resin composition layer contains (D) a curing agent.

5. The resin sheet according to claim 4, wherein the (D) curing agent comprises a maleimide-based resin.

6. The resin sheet according to claim 4, wherein the (D) curing agent comprises a carbodiimide-based resin.

7. The resin sheet according to claim 1 or 2, wherein the thickness of the resin composition layer is 1 μm or more and 150 μm or less.

8. The resin sheet according to claim 1 or 2, wherein the resin sheet comprises a film layer in contact with the resin composition layer.

9. A method of manufacturing a semiconductor chip package, comprising:

a step (I) of cutting the resin composition layer of the resin sheet according to any one of claims 1 to 8,

and (III) curing the resin composition layer.

10. The method of manufacturing a semiconductor chip package according to claim 9, wherein the substrate comprises a wafer.

11. The method for manufacturing a semiconductor chip package according to claim 9 or 10, wherein the step (I) comprises pressing a blade in a thickness direction of the resin composition layer to cut the resin composition layer.

12. A semiconductor chip package, wherein,

comprises a cured product layer obtained by curing a resin composition layer,

the resin composition layer satisfies the following formula (1),

0.09≤P(a)×P(b)/P(c)≤0.3 (1)

in the formula (1), the amino acid sequence of the formula (1),

13. A semiconductor chip package, wherein,

comprises a cured product layer obtained by curing a resin composition layer,

the resin composition layer satisfies the following formula (2),

0.015≤P(a)/P(d)≤0.04 (2)

In the formula (2), the amino acid sequence of the formula (2),

14. A semiconductor device provided with the semiconductor chip package according to claim 12 or 13.

15. A method for manufacturing a circuit board, comprising:

and (III) curing the resin composition layer.

16. A circuit substrate, wherein,

comprises a cured product layer obtained by curing a resin composition layer,

the resin composition layer satisfies the following formula (1),

0.09≤P(a)×P(b)/P(c)≤0.3 (1)

in the formula (1), the amino acid sequence of the formula (1),

17. A circuit substrate, wherein,

comprises a cured product layer obtained by curing a resin composition layer,

the resin composition layer satisfies the following formula (2),

0.015≤P(a)/P(d)≤0.04 (2)

in the formula (2), the amino acid sequence of the formula (2),

18. A semiconductor device comprising the circuit board according to claim 16 or 17.