CN117482731A - Semiconductor tail gas cold and hot double treatment device - Google Patents
Semiconductor tail gas cold and hot double treatment device Download PDFInfo
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- CN117482731A CN117482731A CN202311534096.5A CN202311534096A CN117482731A CN 117482731 A CN117482731 A CN 117482731A CN 202311534096 A CN202311534096 A CN 202311534096A CN 117482731 A CN117482731 A CN 117482731A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 80
- 239000007921 spray Substances 0.000 claims abstract description 98
- 239000000428 dust Substances 0.000 claims abstract description 90
- 238000010438 heat treatment Methods 0.000 claims abstract description 65
- 238000001179 sorption measurement Methods 0.000 claims abstract description 30
- 238000005057 refrigeration Methods 0.000 claims abstract description 14
- 238000005192 partition Methods 0.000 claims abstract description 9
- 238000005979 thermal decomposition reaction Methods 0.000 claims abstract description 9
- 239000007788 liquid Substances 0.000 claims description 88
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 18
- 238000012856 packing Methods 0.000 claims description 14
- 238000007599 discharging Methods 0.000 claims description 13
- 238000007664 blowing Methods 0.000 claims description 9
- 238000000746 purification Methods 0.000 abstract description 14
- 238000006386 neutralization reaction Methods 0.000 abstract description 11
- 230000009977 dual effect Effects 0.000 abstract description 4
- 239000007791 liquid phase Substances 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 142
- 238000001816 cooling Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 8
- 239000012071 phase Substances 0.000 description 7
- 239000003344 environmental pollutant Substances 0.000 description 6
- 231100000719 pollutant Toxicity 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 238000005507 spraying Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 238000007669 thermal treatment Methods 0.000 description 2
- 230000001174 ascending effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/34—Chemical or biological purification of waste gases
- B01D53/74—General processes for purification of waste gases; Apparatus or devices specially adapted therefor
- B01D53/77—Liquid phase processes
- B01D53/78—Liquid phase processes with gas-liquid contact
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D46/00—Filters or filtering processes specially modified for separating dispersed particles from gases or vapours
- B01D46/02—Particle separators, e.g. dust precipitators, having hollow filters made of flexible material
- B01D46/023—Pockets filters, i.e. multiple bag filters mounted on a common frame
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D46/00—Filters or filtering processes specially modified for separating dispersed particles from gases or vapours
- B01D46/02—Particle separators, e.g. dust precipitators, having hollow filters made of flexible material
- B01D46/04—Cleaning filters
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/02—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by adsorption, e.g. preparative gas chromatography
- B01D53/04—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/34—Chemical or biological purification of waste gases
- B01D53/96—Regeneration, reactivation or recycling of reactants
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
- F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
- F25B21/00—Machines, plants or systems, using electric or magnetic effects
- F25B21/02—Machines, plants or systems, using electric or magnetic effects using Peltier effect; using Nernst-Ettinghausen effect
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F9/00—Casings; Header boxes; Auxiliary supports for elements; Auxiliary members within casings
- F28F9/24—Arrangements for promoting turbulent flow of heat-exchange media, e.g. by plates
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Abstract
The invention discloses a semiconductor tail gas cold and hot dual-treatment device which comprises a heat treatment tank, a cold treatment spray tower, a bleed air fan, a dust removal box and an adsorption box, wherein a semiconductor refrigeration mechanism is arranged between the heat treatment tank and the cold treatment spray tower, a thermal decomposition chamber is arranged in the heat treatment tank, a heat conduction baffle plate is arranged in the thermal decomposition chamber, and a burner is arranged at one end of the heat treatment tank; the technical key points are as follows: the tail gas is dedusted through the dedusting box, the tail gas is adsorbed through the adsorption box, the tail gas is heated through the heat treatment tank, the gas is cooled and acid-base treated through the cold treatment spray tower, the gas and liquid phases are fully contacted and absorbed for neutralization reaction when the temperature is reduced, comprehensive purification of the tail gas is realized, the heat treatment tank and the cold treatment spray tower jointly form a cold and hot double-treatment mechanism, comprehensive treatment and purification are carried out on the semiconductor tail gas, the tail gas treatment quality is improved, the tail gas is fully heated by a plurality of groups of heat conduction partition boards, and the treatment quality is further improved.
Description
Technical Field
The invention relates to the technical field of semiconductor tail gas treatment, in particular to a semiconductor tail gas cold and hot double-treatment device.
Background
Semiconductors refer to materials that have electrical conductivity properties at normal temperatures that are intermediate between conductors and insulators. Semiconductors are used in integrated circuits, consumer electronics, communication systems, photovoltaic power generation, lighting applications, high power conversion, and other fields. For example, a diode is a device made of a semiconductor, most of electronic products such as a computer, a mobile phone or a digital recorder have very close association with the semiconductor, and semiconductor tail gas mainly comes from the cleaning, glue homogenizing, photoresist removing, etching and developing processes of chip or circuit board production.
The semiconductor industrial tail gas contains a large amount of pollutant gases and solid particles, if the tail gas is directly discharged without treatment, serious pollution problems are caused, the body health of people can be influenced, the atmospheric environment is worsened, pollution events of environmental pollution are caused, and the like, therefore, the semiconductor tail gas is required to be purified and treated to reach the standard discharge of the atmospheric pollutants, different types of tail gas are different in treatment mode, part of tail gas can decompose harmful substances after heat treatment, the treatment mode of the conventional treatment device is not comprehensive, and the treatment quality is lower.
Disclosure of Invention
The technical problems to be solved are as follows:
aiming at the defects of the prior art, the invention provides a semiconductor tail gas cold and hot dual-treatment device, which is characterized in that a dust removal box is used for removing dust from the tail gas, an adsorption box is used for adsorbing the tail gas, a heat treatment tank is used for heating the tail gas, a cold treatment spray tower is used for cooling the gas and acid-base treatment, the gas and liquid phases are fully contacted, absorbed and neutralized during cooling, so that the comprehensive purification of the tail gas is realized, the heat treatment tank and the cold treatment spray tower jointly form a cold and hot dual-treatment mechanism, the comprehensive treatment and purification of the semiconductor tail gas are realized, the tail gas treatment quality is improved, a plurality of groups of heat conducting partition boards are used for fully heating the tail gas, the treatment quality is further improved, and the technical problems mentioned in the background art are solved.
The technical scheme is as follows:
in order to achieve the above purpose, the present invention is realized by the following technical scheme:
the utility model provides a semiconductor tail gas cold and hot double treatment device, includes heat treatment jar, cold treatment spray column, bleed air fan, dust bin and adsorption tank, be provided with semiconductor refrigeration mechanism between heat treatment jar and the cold treatment spray column, the inside of heat treatment jar is provided with the thermal decomposition room, the internally mounted of thermal decomposition room has the heat conduction baffle, the combustor is installed to the one end of heat treatment jar, carries out high temperature heating through the heat treatment jar to semiconductor tail gas, cools down the gas through the cold treatment spray column, and the gas-liquid is two-phase fully contacts absorption neutralization reaction when cooling down.
In one possible implementation manner, the semiconductor refrigeration mechanism comprises a cold end and a hot end, wherein the cold end is provided with a cold-conducting sleeve, the hot end is provided with a heat-conducting sleeve, and when the semiconductor refrigeration mechanism is electrified, the cold end of the semiconductor refrigeration mechanism is cooled, and the hot end of the semiconductor refrigeration mechanism is heated.
In one possible implementation manner, an air inlet pipe is arranged on one side of the upper end of the heat treatment tank, an air outlet pipe is arranged on the other side of the upper end of the heat treatment tank, the heat conduction sleeve is sleeved on the air inlet pipe, the heat conduction sleeve is sleeved on the air outlet pipe, the heat conduction sleeve preheats tail gas, and the heat conduction sleeve carries out primary cooling on the tail gas.
In one possible implementation manner, the bottom end of the cold treatment spray tower is provided with a circulating liquid box, the upper end of the circulating liquid box is provided with an air inlet base, a conveying pipe is arranged on one side of the air inlet base, a circulating pump is arranged on the outer side of the circulating liquid box, a liquid conveying pipe is arranged at one end of the circulating pump, two groups of spray pipes are arranged on the liquid conveying pipe, the spray pipes are embedded into the cold treatment spray tower, a plurality of groups of spray heads are arranged on the spray pipes, a packing layer and a demister are arranged in the cold treatment spray tower, the circulating pump works, liquid in the circulating liquid box is extracted, the liquid is conveyed to the liquid conveying pipe, is split into the two groups of spray pipes through the liquid conveying pipe, and finally is sprayed out through the plurality of groups of spray heads.
In one possible implementation manner, the top end of the cold treatment spray tower is provided with a discharge pipe, the rear end of the circulating liquid tank is provided with a liquid exchange pipe, the tail gas treated and cooled by the cold treatment spray tower is discharged through the discharge pipe, and the liquid in the circulating liquid tank is replaced periodically through the liquid exchange pipe.
In a possible implementation manner, the bottom of the dust removal box is provided with a dust hopper, one side of the dust hopper is provided with an air inlet, tail gas enters the dust removal box through the air inlet, a plurality of groups of dust removal filter bags are arranged in the dust removal box, the dust removal filter bags are used for removing dust and filtering semiconductor tail gas, an air outlet is arranged above one side of the dust removal box, the filtered tail gas is discharged through the air outlet, a pulse valve assembly is arranged outside the dust removal box, the pulse valve assembly comprises a blowing pipe, the blowing pipe is positioned above the dust removal filter bags, a dust discharging pipe is arranged at the bottom end of the dust hopper, a dust discharging valve is arranged on the dust discharging pipe, the pulse valve assembly is used for blowing and cleaning dust, filtered dust is concentrated in the dust hopper, the dust discharging valve is opened, and the dust is discharged through the dust discharging pipe.
In one possible implementation manner, an activated carbon adsorption layer is arranged inside the adsorption box to adsorb the tail gas.
In one possible implementation manner, the air entraining blower comprises an air inlet hopper and an air supply hopper, wherein the air supply hopper of the air entraining blower is fixedly connected with the air inlet of the dust removal box, and the air supply hopper is connected with the air inlet of the dust removal box.
In one possible implementation manner, the spray header comprises a substrate, spray bars are installed on the outer side of the substrate, three groups of spray bars are arranged, multiple groups of spray holes are formed in the three groups of spray bars, and the three groups of spray bars are uniformly arranged along the circumferential direction of the substrate at intervals.
In one possible implementation manner, the connector is arranged on the base body, the connecting holes are formed in the connector, the spray pipe is provided with a plurality of groups of liquid outlet heads, the liquid outlet heads are embedded into the connecting holes and fixedly connected with the connector, the base body is connected with the connector through a bearing, and the base body can rotate relative to the connector.
Compared with the prior art, the invention has the beneficial effects that:
1. the invention removes dust from the tail gas through the dust removal box, adsorbs the tail gas through the adsorption box, carries out heating treatment on the tail gas through the heat treatment tank, cools the gas through the cold treatment spray tower and carries out acid-base treatment, and the gas-liquid two phases fully contact absorption neutralization reaction while cooling, so that the comprehensive purification of the tail gas is realized, the heat treatment tank and the cold treatment spray tower together form a cold-hot double-treatment mechanism, the comprehensive treatment and purification of the semiconductor tail gas are carried out, and the tail gas treatment quality is improved.
2. According to the invention, the plurality of groups of heat-conducting partition plates in the heat treatment tank form the labyrinth channel, the heat-conducting partition plates have high heat transfer property, when semiconductor tail gas enters the heat treatment tank, the semiconductor tail gas flows in the labyrinth channel, the flowing tail gas is fully contacted with the plurality of groups of heat-conducting partition plates for heat exchange, the tail gas is rapidly heated in a short time, the treatment efficiency is improved, the flowing duration of the tail gas in the heat treatment tank is prolonged by the labyrinth channel, the tail gas is fully heated, and the treatment quality is improved.
Drawings
The foregoing description is only an overview of the present invention, and is intended to provide a better understanding of the present invention, as it is embodied in the following description, with reference to the preferred embodiments of the present invention and the accompanying drawings.
FIG. 1 is a front perspective view of a heat treatment tank and a cold treatment spray tower of the present invention;
FIG. 2 is a rear perspective view of the heat treatment tank and cold treatment spray tower of the present invention;
FIG. 3 is a schematic view showing the internal structure of the heat treatment tank of the present invention;
FIG. 4 is a schematic view showing the internal structure of the cold treatment spray tower of the present invention;
FIG. 5 is a schematic diagram of a semiconductor refrigeration mechanism according to the present invention;
FIG. 6 is a perspective view of the bleed air blower of the present invention;
FIG. 7 is a perspective view of the dust removing box and the suction box of the present invention;
FIG. 8 is a schematic view of the structure of the dust removing tank and the suction tank of the present invention;
FIG. 9 is a schematic view of a showerhead of the present invention;
FIG. 10 is a diagram of the connection of a showerhead to a shower of the present invention.
In the figure: 1. a heat treatment tank; 2. a cold treatment spray tower; 3. an air entraining fan; 4. a dust removal box; 5. an adsorption box; 6. a semiconductor refrigeration mechanism; 7. a heat conducting sleeve; 8. a cold guide sleeve; 9. an air inlet pipe; 10. an air outlet pipe; 11. a thermal decomposition chamber; 12. a thermally conductive separator plate; 13. a burner; 14. a circulating liquid tank; 15. an air inlet base; 16. a delivery tube; 17. a circulation pump; 18. a liquid feeding pipe; 19. a shower pipe; 20. a spray header; 21. a discharge pipe; 22. a filler layer; 23. a liquid exchange tube; 24. a dust hopper; 25. an air inlet; 26. dedusting filter bags; 27. an air outlet; 28. a pulse valve assembly; 29. a blowing pipe; 30. a dust exhaust pipe; 31. a dust discharge valve; 32. an activated carbon adsorption layer; 33. a base; 34. a spray bar; 35. spraying holes; 36. a connector; 37. a connection hole; 38. a liquid outlet head; 39. an air inlet hopper; 40. and (5) an air supply hopper.
Detailed Description
The embodiment of the application is through providing a cold and hot double treatment device of semiconductor tail gas, remove dust to tail gas through the dust removal case, adsorb tail gas through the adsorption case, carry out heating treatment to tail gas through the thermal treatment jar, cool down and acid-base treatment to gas through the cold treatment spray tower, the gas-liquid is two-phase fully contact absorption neutralization reaction when cooling down, realize the comprehensive purification to tail gas, the thermal treatment jar constitutes cold and hot double treatment mechanism jointly with the cold treatment spray tower, carry out comprehensive treatment purification to semiconductor tail gas, the tail gas treatment quality has been improved, multiunit heat conduction baffle makes tail gas fully heated, further the treatment quality has been improved, the technical problem who mentions in the background art has been solved.
The technical scheme in the embodiment of the application aims to solve the problems of the background technology, and the overall thought is as follows:
example 1:
referring to fig. 1-10, the present invention provides a technical solution: the utility model provides a semiconductor tail gas cold and hot double treatment device, including heat treatment jar 1, cold treatment spray column 2, bleed air fan 3, dust removal case 4 and adsorption case 5, be provided with semiconductor refrigeration mechanism 6 between heat treatment jar 1 and the cold treatment spray column 2, the inside of heat treatment jar 1 is provided with thermal decomposition room 11, thermal decomposition room 11 internally mounted has heat conduction baffle 12, combustor 13 is installed to one end of heat treatment jar 1, carry out high temperature heating through heat treatment jar 1 to semiconductor tail gas, turn into harmless or less material of harm with the harmful substance in the semiconductor tail gas, cool down the gas through cold treatment spray column 2, the gas-liquid double-phase fully contacts absorption neutralization reaction when cooling down, the neutralization purification is carried out to acid gas or alkaline gas in the semiconductor tail gas, utilize the neutralization to get rid of the pollutant in the semiconductor tail gas, thereby reach the atmospheric emission standard.
Wherein, multiunit heat conduction baffle 12 interval evenly sets up, and multiunit heat conduction baffle 12 constitutes the maze passageway, and heat conduction baffle 12 possess high heat transfer nature, and when semiconductor tail gas got into heat treatment jar 1, flowed in the maze passageway, fully contacted heat transfer between tail gas and multiunit heat conduction baffle 12 in flowing, and the tail gas is at the short time intensification, realizes the heating treatment to the tail gas, has improved treatment effeciency.
The labyrinth channel prolongs the flowing time of the tail gas in the heat treatment tank 1, so that the tail gas is heated fully, and the treatment quality is improved.
The air inlet hopper 39 of the air entraining fan 3 is connected with the exhaust hood, the air supply hopper 40 of the air entraining fan 3 is connected with the air inlet 25 of the dust removing box 4, semiconductor tail gas volatilized from a semiconductor production site is collected by the exhaust hood, then is sent to the dust removing box 4 through a pipeline, is dedusted by the dust removing box 4 and then is sent to the adsorption box 5, the active carbon adsorption layer 32 in the adsorption box 5 adsorbs the tail gas, the active carbon adsorption layer 32 utilizes the multiple holes on the surface of the active carbon to adsorb harmful substances in the semiconductor tail gas, the purification efficiency is improved, the tail gas after dust removal and adsorption enters the heat treatment tank 1 through the pipeline, the tail gas after high-temperature treatment by the heat treatment tank 1 enters the cold treatment spray tower 2, and the gas-liquid two phases are fully contacted and absorbed for neutralization reaction, so that the purification treatment of the tail gas is realized.
Wherein, the heat treatment tank 1 and the cold treatment spray tower 2 together form a cold and hot double-treatment mechanism, and the semiconductor tail gas is comprehensively treated and purified, so that the treatment quality is improved.
In some examples, the semiconductor refrigeration mechanism 6 includes a cold end and a hot end, the cold end is provided with a cold conducting sleeve 8, the hot end is provided with a heat conducting sleeve 7, when the semiconductor refrigeration mechanism 6 is powered on, the cold end of the semiconductor refrigeration mechanism 6 is cooled, the hot end of the semiconductor refrigeration mechanism 6 is heated, the cold end heat is transferred to the cold conducting sleeve 8, and the hot end heat is transferred to the heat conducting sleeve 7.
In some examples, an air inlet pipe 9 is arranged on one side of the upper end of the heat treatment tank 1, an air outlet pipe 10 is arranged on the other side of the upper end of the heat treatment tank 1, a heat conduction sleeve 7 is sleeved on the air inlet pipe 9, a cold conduction sleeve 8 is sleeved on the air outlet pipe 10, when semiconductor tail gas enters the heat treatment tank 1 through the air inlet pipe 9, the semiconductor tail gas is primarily heated and warmed by the heat conduction sleeve 7, preheating of the semiconductor tail gas is achieved, heat treatment efficiency is further improved, and when the tail gas after heat treatment is discharged through the air outlet pipe 10, the tail gas is cooled by the cold conduction sleeve 8, and primary cooling of the semiconductor tail gas is achieved.
In some examples, the bottom end of the cold treatment spray tower 2 is provided with a circulating liquid tank 14, the inside of the circulating liquid tank 14 is stored with spray liquid, the upper end of the circulating liquid tank 14 is provided with an air inlet base 15, one side of the air inlet base 15 is provided with a conveying pipe 16, tail gas enters the inside of the cold treatment spray tower 2 through the conveying pipe 16, the outside of the circulating liquid tank 14 is provided with a circulating pump 17, one end of the circulating pump 17 is provided with a liquid conveying pipe 18, the other end of the circulating pump 17 is embedded into the inside of the circulating liquid tank 14, two groups of spray pipes 19 are arranged on the liquid conveying pipe 18, the two groups of spray pipes 19 are embedded into the inside of the cold treatment spray tower 2, a plurality of groups of spray heads 20 are arranged on the spray pipes 19 at equal intervals, large-area spraying is realized, the inside of the cold treatment spray tower 2 is provided with a filler layer 22 and demisters, when the circulating pump 17 works, liquid in the circulating liquid tank 14 is pumped into the liquid conveying pipe 18, is split into the two groups of spray pipes 19 through the liquid conveying pipe 18, finally sprayed out through the plurality of groups of spray heads 20, and flows downwards along the surface to be in full contact with the gas.
The packing support plate is arranged at the bottom of the packing layer 22, the packing layer 22 is arranged on the support plate, the packing pressing plate is arranged above the packing layer 22, the packing layer 22 is prevented from being blown by ascending air flow, the spray liquid of the cold treatment spray tower 2 is sprayed onto the packing through the spray pipe 19 and flows downwards along the packing surface, the tail gas is introduced into the bottom of the cold treatment spray tower 2 and continuously passes through the gap of the packing layer 22 in countercurrent with the liquid, mass transfer is carried out on the surface of the packing layer 22 by tightly contacting the gas and the liquid, and the spray liquid is contacted with pollutant in the tail gas, so that the pollutant is adsorbed, decomposed or reacted on the surface of the packing layer 22, thereby achieving the aim of purifying the tail gas.
The demister is arranged above the packing layer 22 and the spray pipe 19 and is used for separating liquid drops carried by tail gas, sprayed spray liquid flows back to the circulating liquid box 14 and is recycled.
In some examples, the top end of the cold treatment spray tower 2 is provided with a discharge pipe 21, the rear end of the circulating liquid tank 14 is provided with a liquid exchange pipe 23, the tail gas treated and cooled by the cold treatment spray tower 2 is discharged through the discharge pipe 21, and the liquid in the circulating liquid tank 14 is periodically exchanged through the liquid exchange pipe 23.
In some examples, the bottom of the dust box 4 is provided with a dust hopper 24, one side of the dust hopper 24 is provided with an air inlet 25, semiconductor tail gas enters the dust box 4 through the air inlet 25, a plurality of groups of dust removing filter bags 26 are installed in the dust box 4, the semiconductor tail gas is subjected to dust removing and filtering through the plurality of groups of dust removing filter bags 26, an air outlet 27 is arranged above one side of the dust box 4, the filtered tail gas is discharged through the air outlet 27, a pulse valve assembly 28 is installed outside the dust box 4, the pulse valve assembly 28 comprises a blowing pipe 29, the blowing pipe 29 is positioned above the dust removing filter bags 26, the pulse valve assembly 28 is controlled by a pulse blowing controller output signal to blow dust to the plurality of groups of dust removing filter bags 26, a dust discharging pipe 30 is installed at the bottom end of the dust removing hopper 24, a dust discharging valve 31 is installed on the dust discharging pipe 30, and filtered dust is concentrated in the dust collecting hopper 24, and when the dust discharging valve 31 is opened, the dust is discharged through the dust discharging pipe 30.
In some examples, the activated carbon adsorption layer 32 is arranged in the adsorption box 5, the semiconductor tail gas firstly enters the dust removal box 4, the dust removal box 4 removes dust, the dust removed tail gas enters the adsorption box 5 again, the dust removed tail gas is adsorbed and filtered by the activated carbon adsorption layer 32 in the adsorption box 5, and toxic and harmful gas in the semiconductor tail gas can be firmly locked by the specific surface area and the porous structure of the activated carbon adsorption layer 32 when passing through the activated carbon adsorption layer 32, so that the purification of the semiconductor tail gas is realized.
In some examples, the air entraining blower 3 includes an air inlet hopper 39 and an air supply hopper 40, the air supply hopper 40 of the air entraining blower 3 is fixedly connected with the air inlet 25 of the dust removal box 4, the air inlet hopper 39 of the air entraining blower 3 is connected with the exhaust hood, the air supply hopper 40 of the air entraining blower 3 is connected with the air inlet 25 of the dust removal box 4, and semiconductor tail gas volatilized from a semiconductor production site is collected by the exhaust hood and sent to the tail gas treatment system through a pipeline.
In the specific working process:
the air inlet hopper 39 of the air entraining blower 3 is connected with the exhaust hood, the air supply hopper 40 of the air entraining blower 3 is connected with the air inlet 25 of the dust removing tank 4, the semiconductor tail gas volatilized from the semiconductor production site is collected by the exhaust hood and then sent to the tail gas treatment system through a pipeline, the tail gas firstly enters the dust removing tank 4 and is dedusted by the dust removing tank 4, the dedusted tail gas then enters the adsorption tank 5 and is adsorbed and filtered by the active carbon adsorption layer 32 in the adsorption tank 5, the dust removed and the adsorbed and filtered tail gas enters the heat treatment tank 1 through the air inlet pipe 9, the tail gas is preheated by the hot end of the semiconductor refrigerating mechanism 6 before entering the heat treatment tank 1, the preheated tail gas enters the heat treatment tank 1 and is heated by the heat treatment tank 1, the semiconductor tail gas is heated at high temperature by the heat treatment tank 1, harmful substances in semiconductor tail gas are converted into harmless substances or substances with little harm, the tail gas treated by the heat treatment tank 1 is discharged through the gas outlet pipe 10 and enters the cold treatment spray tower 2 through the conveying pipe 16, the gas is cooled by the cold treatment spray tower 2, the gas-liquid two phases are fully contacted and absorbed for neutralization reaction while being cooled, the acid gas or alkaline gas in the semiconductor tail gas is neutralized and purified, and acid-base neutralization is utilized to remove pollutants in the semiconductor tail gas, so that the atmospheric emission standard is achieved, the tail gas treated and cooled by the cold treatment spray tower 2 is discharged through the discharge pipe 21, and the liquid in the circulating liquid tank 14 is replaced regularly through the liquid exchange pipe 23.
By adopting the technical scheme:
the tail gas is dedusted through the dedusting box 4, the tail gas is adsorbed through the adsorption box 5, the tail gas is heated through the heat treatment tank 1, the gas is cooled and acid-base treated through the cold treatment spray tower 2, and the gas-liquid two phases fully contact absorption neutralization reaction while cooling, so that the comprehensive purification of the tail gas is realized, the heat treatment tank 1 and the cold treatment spray tower 2 together form a cold-hot double-treatment mechanism, the comprehensive treatment and purification of the semiconductor tail gas are realized, and the tail gas treatment quality is improved;
the heat-conducting partition boards 12 in the heat treatment tank 1 form a labyrinth channel, the heat-conducting partition boards 12 have high heat conductivity, when semiconductor tail gas enters the heat treatment tank 1, the semiconductor tail gas flows in the labyrinth channel, the flowing tail gas fully contacts with the heat-conducting partition boards 12 for heat exchange, the temperature of the tail gas is raised in a short time, the heating treatment of the tail gas is realized, the treatment efficiency is improved, the flowing time of the tail gas in the heat treatment tank 1 is prolonged by the labyrinth channel, the tail gas is fully heated, and the treatment quality is improved.
Example 2:
based on embodiment 1, this embodiment describes a specific structure of the shower head 20 in the semiconductor tail gas cold and hot dual-treatment device, as shown in fig. 9 and 10, the shower head 20 includes a base 33, the outer side of the base 33 is provided with shower rods 34, the shower rods 34 are provided with three groups, the three groups of shower rods 34 are provided with multiple groups of shower holes 35, and the three groups of shower rods 34 are uniformly arranged along the circumferential direction of the base 33 at intervals.
Wherein, spray liquid gets into in the base member 33 of shower head 20 through shower 19, and in the redistribution is to three groups spray rod 34, finally spouts through the multiunit spraying hole 35 of three groups spray rod 34, and shower head 20 possesses great spray area, has improved the area of contact between gas and liquid, and the close contact carries out the mass transfer between gas and liquid, and the reaction is effectual, and then has improved the treatment quality to tail gas.
In some examples, the substrate 33 is provided with a connector 36, the connector 36 is provided with a connecting hole 37, the shower pipe 19 is provided with a plurality of groups of liquid outlet heads 38, the liquid outlet heads 38 are embedded into the connecting hole 37 and fixedly connected with the connector 36, the substrate 33 is connected with the connector 36 through bearings, the groups of liquid outlet heads 38 are in one-to-one correspondence with the groups of shower heads 20, and the substrate 33 can rotate relative to the connector 36.
When the liquid is sprayed out from the liquid outlet head 38 of the spray pipe 19 and enters the substrate 33, the substrate 33 is subjected to uneven external force, and then rotates at a high speed relative to the connector 36, and is sprayed in the rotating process, so that the spraying area is further increased, the contact area between the gas and the liquid is further increased, the treatment quality of the tail gas is further improved, and the tail gas is comprehensively cooled and purified.
In the specific working process:
the circulation pump 17 works, liquid in the circulation liquid tank 14 is extracted and sent to the liquid sending pipe 18, the liquid is split to the two groups of spray pipes 19 through the liquid sending pipe 18, the spray liquid enters the base body 33 of each spray header 20 through the spray pipes 19, and then flows into the three groups of spray rods 34, finally, the liquid is sprayed out through the plurality of groups of spray holes 35 of the three groups of spray rods 34, and when the liquid is sprayed out through the liquid outlet heads 38 of the spray pipes 19 and enters the base body 33, the base body 33 is subjected to uneven external force, and then rotates at a high speed relative to the connecting heads 36, and is sprayed in the rotating process.
By adopting the technical scheme:
the spray liquid enters the matrix 33 of the spray header 20 through the spray pipe 19, flows into the three groups of spray rods 34, finally is sprayed out through the plurality of groups of spray holes 35 of the three groups of spray rods 34, the spray header 20 has larger spray area, the contact area between gas and liquid is increased, the gas and the liquid are in close contact and carry out mass transfer, the reaction effect is good, the tail gas treatment quality is further improved, the matrix 33 can rotate relative to the connector 36, the liquid is sprayed out through the liquid outlet head 38 of the spray pipe 19 and enters the matrix 33, the matrix 33 is subjected to uneven external force, and then rotates at a high speed relative to the connector 36, the spray area is further increased, the contact area between gas and liquid is further increased, and the tail gas treatment quality is further improved, so that the tail gas is comprehensively cooled and purified.
Finally, it should be noted that: it is apparent that the above examples are only illustrative of the present invention and are not limiting of the embodiments. Other variations or modifications of the above teachings will be apparent to those of ordinary skill in the art. It is not necessary here nor is it exhaustive of all embodiments. And obvious variations or modifications thereof are contemplated as falling within the scope of the present invention.
Claims (10)
1. The utility model provides a semiconductor tail gas cold and hot double treatment device, includes heat treatment jar (1), cold treatment spray column (2), bleed air fan (3), dust removal case (4) and adsorption case (5), its characterized in that: a semiconductor refrigerating mechanism (6) is arranged between the heat treatment tank (1) and the cold treatment spray tower (2), a thermal decomposition chamber (11) is arranged in the heat treatment tank (1), a heat conducting partition plate (12) is arranged in the thermal decomposition chamber (11), and a combustor (13) is arranged at one end of the heat treatment tank (1).
2. The semiconductor tail gas cold and hot double treatment device according to claim 1, wherein: the semiconductor refrigeration mechanism (6) comprises a cold end and a hot end, wherein the cold end is provided with a cold-conducting sleeve (8), and the hot end is provided with a heat-conducting sleeve (7).
3. The semiconductor tail gas cold and hot double treatment device according to claim 2, wherein: one side of heat treatment jar (1) upper end is provided with intake pipe (9), the opposite side of heat treatment jar (1) upper end is provided with outlet duct (10), heat conduction cover (7) cover is established on intake pipe (9), cold conduction cover (8) cover is established on outlet duct (10).
4. The semiconductor tail gas cold and hot double treatment device according to claim 1, wherein: the utility model discloses a cold treatment spray tower, including cold treatment spray tower (2), conveyer pipe (16) are installed in the bottom of cold treatment spray tower (2) and be provided with circulation liquid case (14), the upper end of circulation liquid case (14) is provided with inlet base (15), conveyer pipe (17) are installed in one side of inlet base (15), circulation pump (17) are installed in the outside of circulation liquid case (14), liquid feed pipe (18) are installed to one end of circulation pump (17), install two sets of shower (19) on liquid feed pipe (18), two sets of shower (19) all imbed the inside of cold treatment spray tower (2), install multiunit shower head (20) on shower (19), the inside of cold treatment spray tower (2) is provided with packing layer (22) and defroster.
5. The semiconductor tail gas cold and hot double treatment device according to claim 4, wherein: the top end of the cold treatment spray tower (2) is provided with a discharge pipe (21), and the rear end of the circulating liquid box (14) is provided with a liquid exchange pipe (23).
6. The semiconductor tail gas cold and hot double treatment device according to claim 1, wherein: the dust box is characterized in that a dust hopper (24) is arranged at the bottom of the dust box (4), an air inlet (25) is formed in one side of the dust hopper (24), a plurality of groups of dust removing filter bags (26) are arranged in the dust box (4), an air outlet (27) is formed in the upper portion of one side of the dust box (4), a pulse valve assembly (28) is arranged on the outer side of the dust box (4), the pulse valve assembly (28) comprises a blowing pipe (29), the blowing pipe (29) is arranged above the dust removing filter bags (26), a dust discharging pipe (30) is arranged at the bottom end of the dust hopper (24), and a dust discharging valve (31) is arranged on the dust discharging pipe (30).
7. The semiconductor tail gas cold and hot double treatment device according to claim 1, wherein: an activated carbon adsorption layer (32) is arranged in the adsorption box (5).
8. The semiconductor tail gas cold and hot double treatment device according to claim 6, wherein: the air entraining fan (3) comprises an air inlet hopper (39) and an air supply hopper (40), and the air supply hopper (40) of the air entraining fan (3) is fixedly connected with the air inlet (25) of the dust removal box (4).
9. The semiconductor tail gas cold and hot double treatment device according to claim 4, wherein: the shower head (20) comprises a base body (33), a shower rod (34) is arranged on the outer side of the base body (33), three groups of shower rods (34) are arranged, and a plurality of groups of shower holes (35) are formed in the shower rods (34).
10. The semiconductor tail gas cold and hot double treatment device according to claim 9, wherein: the shower is characterized in that a connector (36) is arranged on the base body (33), a connecting hole (37) is formed in the connector (36), a plurality of groups of liquid outlet heads (38) are arranged on the shower pipe (19), the liquid outlet heads (38) are embedded into the connecting hole (37) and fixedly connected with the connector (36), and the base body (33) is connected with the connector (36) through a bearing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311534096.5A CN117482731A (en) | 2023-11-17 | 2023-11-17 | Semiconductor tail gas cold and hot double treatment device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311534096.5A CN117482731A (en) | 2023-11-17 | 2023-11-17 | Semiconductor tail gas cold and hot double treatment device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117482731A true CN117482731A (en) | 2024-02-02 |
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ID=89668904
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311534096.5A Pending CN117482731A (en) | 2023-11-17 | 2023-11-17 | Semiconductor tail gas cold and hot double treatment device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117482731A (en) |
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2023
- 2023-11-17 CN CN202311534096.5A patent/CN117482731A/en active Pending
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