CN117479093A - Method for manufacturing loudspeaker and loudspeaker - Google Patents
Method for manufacturing loudspeaker and loudspeaker Download PDFInfo
- Publication number
- CN117479093A CN117479093A CN202311608357.3A CN202311608357A CN117479093A CN 117479093 A CN117479093 A CN 117479093A CN 202311608357 A CN202311608357 A CN 202311608357A CN 117479093 A CN117479093 A CN 117479093A
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- CN
- China
- Prior art keywords
- layer
- loudspeaker
- substrate
- top semiconductor
- semiconductor layer
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Links
- 238000000034 method Methods 0.000 title claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 57
- 239000004065 semiconductor Substances 0.000 claims abstract description 31
- 238000005530 etching Methods 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- 239000010409 thin film Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 239000010408 film Substances 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 239000002131 composite material Substances 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011185 multilayer composite material Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
- H04R31/003—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor for diaphragms or their outer suspension
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/02—Loudspeakers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
- H04R2201/003—Mems transducers or their use
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R2231/00—Details of apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor covered by H04R31/00, not provided for in its subgroups
- H04R2231/001—Moulding aspects of diaphragm or surround
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Transducers For Audible Bands (AREA)
Abstract
The invention provides a manufacturing method of a loudspeaker and the loudspeaker. The manufacturing method of the loudspeaker comprises the following steps: providing a first substrate, wherein the first substrate comprises a back supporting layer, a front top semiconductor layer and a buried insulating layer between the supporting layer and the top semiconductor layer; forming a vibration unit of a loudspeaker on the surface of the top semiconductor layer; etching the supporting layer to form a cavity, wherein the etching process is stopped at the insulating buried layer, so that a vibration unit of the loudspeaker is suspended at the cavity; providing a second substrate, the second substrate surface comprising an acoustic superstructure; and aligning and bonding the first substrate and the second substrate, so that the acoustic super structure is aligned and bonded in the cavity. According to the technical scheme, the large-volume loudspeaker sound cavity can be obtained, more low-frequency vibration space can be provided for the large-volume sound cavity, the acoustic performance of the loudspeaker under low frequency is improved, the low-frequency effect and the acoustic short circuit phenomenon are improved, and the high-bandwidth characteristic is realized.
Description
Technical Field
The invention relates to the field of MEMS (micro electro mechanical systems) processes, in particular to a manufacturing method of a loudspeaker and the loudspeaker.
Background
The speaker is one of the indispensable elements in the electronic terminal device. The use of MEMS technology to fabricate miniaturized speakers is a common design and fabrication approach in the art. The MEMS technology achieves miniaturization of components and parts, and simultaneously brings problems of small volume of an acoustic cavity, poor acoustic performance and the like, and particularly, the low-frequency performance of a loudspeaker needs to be improved under the small volume of the acoustic cavity.
Therefore, how to provide a sound cavity volume as large as possible while ensuring miniaturization of a speaker and improve sound field characteristics is a problem to be solved in the prior art.
Disclosure of Invention
The invention aims to solve the technical problem of providing a manufacturing method of a loudspeaker and the loudspeaker, which can ensure the miniaturization of the loudspeaker and simultaneously provide the volume of an acoustic cavity as large as possible.
In order to solve the above problems, the present invention provides a method for manufacturing a speaker, comprising the following steps: providing a first substrate, wherein the first substrate comprises a back supporting layer, a front top semiconductor layer and a buried insulating layer between the supporting layer and the top semiconductor layer; forming a vibration unit of a loudspeaker on the surface of the top semiconductor layer; etching the supporting layer to form a cavity, wherein the etching process is stopped at the insulating buried layer, so that a vibration unit of the loudspeaker is suspended at the cavity; providing a second substrate, the second substrate surface comprising an acoustic superstructure; and aligning and bonding the first substrate and the second substrate, so that the acoustic super structure is aligned and bonded in the cavity.
In order to solve the above-described problems, the present invention provides a speaker including a first substrate and a second substrate bonded to each other: the first substrate comprises a back supporting layer, a front top semiconductor layer and a buried insulating layer between the supporting layer and the top semiconductor layer; the surface of the top semiconductor layer on the front surface of the first substrate is provided with a vibration unit of a loudspeaker; the supporting layer and the insulating buried layer of the first substrate are internally provided with cavities, and the vibration unit of the loudspeaker is suspended at the cavities; the second substrate surface includes an acoustic superstructure disposed within the cavity.
The technical scheme utilizes the self-stopping characteristic of the insulating buried layer in the SOI structure, easily and accurately controls the shape and thickness of the front reserved part, and accurately releases the cantilever structure. Therefore, the mode of directly forming the cavity on the back surface can obtain a large-volume loudspeaker sound cavity, the large-volume sound cavity can provide more low-frequency vibration space, the acoustic performance of the loudspeaker under low frequency is improved, the low-frequency effect and the sound short circuit phenomenon are improved, and the high-bandwidth characteristic is realized.
Drawings
FIG. 1 is a schematic diagram showing the implementation steps of a method according to an embodiment of the present invention.
Fig. 2A to 2F are schematic process diagrams of an embodiment of the present invention.
Detailed Description
The following describes a method for manufacturing a speaker and a specific embodiment of the speaker according to the present invention in detail with reference to the accompanying drawings.
FIG. 1 is a schematic diagram of the implementation steps of the method according to the present embodiment, including: step S10, providing a first substrate, wherein the first substrate comprises a back supporting layer, a front top semiconductor layer and a buried insulating layer between the supporting layer and the top semiconductor layer; step S11, an insulating layer, a first metal layer, a piezoelectric film layer and a second metal layer are sequentially formed on the surface of the top semiconductor layer; step S12, patterning the piezoelectric film layer and the second metal layer to form an upper polar plate of a vibration unit of the loudspeaker; step S13, patterning the top semiconductor layer, the insulating layer and the first metal layer to form a lower polar plate of a vibration unit of the loudspeaker, thereby forming the vibration unit of the loudspeaker; step S14, corroding the supporting layer to form a cavity, wherein the corrosion process is stopped at the insulating buried layer, so that a vibration unit of the loudspeaker is suspended at the cavity; step S15, providing a second substrate, wherein the surface of the second substrate comprises an acoustic super structure; and S16, aligning and bonding the first substrate and the second substrate, and aligning and bonding the acoustic super structure in the cavity.
Fig. 2A to 2F are schematic process diagrams of the present embodiment.
Referring to step S10, as shown in fig. 2A, a first substrate 21 is provided, where the first substrate 21 includes a back support layer 211, a front top semiconductor layer 212, and a buried insulating layer 213 between the support layer 211 and the top semiconductor layer 212. The above structure is a typical SOI substrate structure, and can be obtained by a manufacturing means such as bonding.
Referring to fig. 2B, referring to step S11, an insulating layer 23, a first metal layer 24, a piezoelectric thin film layer 25, and a second metal layer 26 are sequentially formed on the surface of the top semiconductor layer 212. The piezoelectric thin film layer 25 may be made of PZT or AlN material, or a multilayer composite material of both. The material of the insulating layer 23 may be, for example, silicon dioxide. The insulating layer 23 and the piezoelectric thin film layer 25 may be formed by, for example, chemical vapor deposition, and the first metal layer 24 and the second metal layer 26 may be formed by, for example, magnetron sputtering or electron beam evaporation.
Referring to fig. 2C, referring to steps S12 and S13, the piezoelectric thin film layer 25 and the second metal layer 26 are patterned to form an upper plate of the vibration unit of the speaker, and the top semiconductor layer 212, the insulating layer 23, and the first metal layer 24 are patterned to form a lower plate of the vibration unit of the speaker, thereby forming the vibration unit of the speaker. The above structure may be patterned using dry or wet etching. In order that the lower plate can be electrically connected to the outside, the upper plate formed of the piezoelectric thin film layer 25 and the second metal layer 26 should be formed in a stepped structure with the lower plate or a through hole for filling the electrical connection structure is formed in the upper plate.
Referring to fig. 2D, referring to step S14, the supporting layer 211 is etched to form a cavity 27, and the etching process is stopped at the buried insulating layer 213, so that the vibration unit of the speaker is suspended at the cavity 27. The cavity 27 may be formed by dry or wet etching. In this embodiment, the buried insulating layer 213 is also removed, and in other embodiments, the buried insulating layer 213 may be left. In the above figures, the vibration units obtained after releasing the structure are two opposite cantilever beams, in other specific embodiments, one or more vibration units may be further provided, and each vibration unit may be a single cantilever beam and be arranged in an array along the vertical or parallel direction of the picture. Thus, by utilizing the self-stopping characteristic of the insulating buried layer in the SOI structure, the shape and thickness of the front reserved part can be easily and accurately controlled, and the cantilever structure can be accurately released. Therefore, the mode of directly forming the cavity on the back surface can obtain a large-volume loudspeaker sound cavity, the large-volume sound cavity can provide more low-frequency vibration space, the acoustic performance of the loudspeaker under low frequency is improved, the low-frequency effect and the sound short circuit phenomenon are improved, and the high-bandwidth characteristic is realized.
Referring to step S15, as shown in fig. 2E, a second substrate 22 is provided, and the surface of the second substrate 22 includes an acoustic super structure 221. The acoustic superstructure is an array of microstructure elements formed on the surface of the second substrate 22 via an etching process. The microstructure unit array comprises an array formed by periodically arranging a plurality of regular triangular pyramids or cylinders, and can obtain the characteristics of local resonance, low-frequency band gap and the like. The surface of the second substrate 22 may be processed by dry or wet etching to form an acoustic superstructure for improving the low frequency band performance of the speaker. And preferably, as described in this embodiment, a pit is formed in the surface of the second substrate 22 in advance, and the acoustic super-structure 221 is disposed at the bottom of the pit. The pits may further increase the volume of the acoustic cavity.
Referring to step S16, the first substrate 21 and the second substrate 22 are aligned and bonded, so that the acoustic super structure 221 is aligned and bonded in the cavity 27, as shown in fig. 2F. In this particular aspect, the bonding surface further includes a pre-bonding layer 28 of silica or alumina, and the pre-bonding layer 28 may be formed on at least one of the bonding surface surfaces prior to bonding.
In other embodiments, at least one of the second substrate 22 or the first substrate 21 may further include logic circuits such as CMOS processing circuits to implement monolithic integration. The logic circuit drives a plurality of vibration units in-phase or out-of-phase by controlling the driving signals, so that out-of-plane driving is realized, and SPL is improved.
After the implementation of the above method, the obtained loudspeaker comprises a first substrate 21 and a second substrate 22 bonded with each other; the first substrate 21 includes a back support layer 211, a front top semiconductor layer 212, and a buried insulating layer 213 between the support layer 211 and the top semiconductor layer 212; the surface of the top semiconductor layer 212 on the front surface of the first substrate 21 has a vibration unit of a speaker; a cavity 27 is formed in the supporting layer 211 and the buried insulating layer 213 of the first substrate, and the vibration unit of the loudspeaker is suspended at the cavity 27; the second substrate 22 surface includes an acoustic superstructure 221, the acoustic superstructure 221 being disposed within the cavity. The structure utilizes the self-stopping characteristic of the insulating buried layer in the SOI structure, the shape and thickness of the front reserved part can be easily and accurately controlled, and the cantilever structure can be accurately released. Therefore, the mode of directly forming the cavity on the back surface can obtain a large-volume loudspeaker sound cavity, the large-volume sound cavity can provide more low-frequency vibration space, the acoustic performance of the loudspeaker under low frequency is improved, the low-frequency effect and the sound short circuit phenomenon are improved, and the high-bandwidth characteristic is realized.
The foregoing is merely a preferred embodiment of the present invention and it should be noted that modifications and adaptations to those skilled in the art may be made without departing from the principles of the present invention, which are intended to be comprehended within the scope of the present invention.
Claims (13)
1. A method of manufacturing a loudspeaker, comprising the steps of:
providing a first substrate, wherein the first substrate comprises a back supporting layer, a front top semiconductor layer and a buried insulating layer between the supporting layer and the top semiconductor layer;
forming a vibration unit of a loudspeaker on the surface of the top semiconductor layer;
etching the supporting layer to form a cavity, wherein the etching process is stopped at the insulating buried layer, so that a vibration unit of the loudspeaker is suspended at the cavity;
providing a second substrate, the second substrate surface comprising an acoustic superstructure;
and aligning and bonding the first substrate and the second substrate, so that the acoustic super structure is aligned and bonded in the cavity.
2. The method of claim 1, wherein the step of forming a vibration unit of a speaker on the top semiconductor layer surface further comprises:
sequentially forming an insulating layer, a first metal layer, a piezoelectric film layer and a second metal layer on the surface of the top semiconductor layer;
patterning the piezoelectric film layer and the second metal layer to form an upper polar plate of a vibration unit of the loudspeaker;
and patterning the top semiconductor layer, the insulating layer and the first metal layer to form a lower polar plate of the vibration unit of the loudspeaker, thereby forming the vibration unit of the loudspeaker.
3. The method of claim 2, wherein the piezoelectric thin film layer is made of a material selected from the group consisting of a multilayer composite of PZT and AlN, or both.
4. The method of claim 1, wherein the plurality of vibration units of the speaker are located in the same cavity.
5. The method of claim 1, wherein the second substrate surface comprises a pit, and the acoustic superstructure is disposed at a bottom of the pit.
6. The method of claim 1, wherein the bonding includes the step of forming a pre-bond layer on at least one bonding surface.
7. The method of claim 6, wherein the material of the pre-bond layer is silicon dioxide or aluminum oxide.
8. The method of claim 1, wherein the acoustic superstructure comprises an array of a plurality of regular triangular pyramids or cylinders arranged periodically on the surface of the second substrate.
9. A speaker comprising a first substrate and a second substrate bonded to each other:
the first substrate comprises a back supporting layer, a front top semiconductor layer and a buried insulating layer between the supporting layer and the top semiconductor layer;
the surface of the top semiconductor layer on the front surface of the first substrate is provided with a vibration unit of a loudspeaker;
the supporting layer and the insulating buried layer of the first substrate are internally provided with cavities, and the vibration unit of the loudspeaker is suspended at the cavities;
the second substrate surface includes an acoustic superstructure disposed within the cavity.
10. The loudspeaker of claim 9, wherein the vibration unit of the loudspeaker comprises a top semiconductor layer, an insulating layer and a lower plate of a first metal layer above the top semiconductor layer, and an upper plate comprising a piezoelectric thin film layer and a second metal layer.
11. The loudspeaker of claim 10, wherein the piezoelectric thin film layer is made of a material selected from one or both of PZT and AlN.
12. The loudspeaker of claim 9, wherein the plurality of vibration units of the loudspeaker are located in the same cavity.
13. The loudspeaker of claim 9, wherein the second substrate surface comprises a pit, and the acoustic superstructure is disposed at a bottom of the pit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311608357.3A CN117479093A (en) | 2023-11-28 | 2023-11-28 | Method for manufacturing loudspeaker and loudspeaker |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311608357.3A CN117479093A (en) | 2023-11-28 | 2023-11-28 | Method for manufacturing loudspeaker and loudspeaker |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117479093A true CN117479093A (en) | 2024-01-30 |
Family
ID=89623953
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311608357.3A Pending CN117479093A (en) | 2023-11-28 | 2023-11-28 | Method for manufacturing loudspeaker and loudspeaker |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117479093A (en) |
-
2023
- 2023-11-28 CN CN202311608357.3A patent/CN117479093A/en active Pending
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