CN117477352A - Quantum well light-emitting structure - Google Patents
Quantum well light-emitting structure Download PDFInfo
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- CN117477352A CN117477352A CN202311434131.6A CN202311434131A CN117477352A CN 117477352 A CN117477352 A CN 117477352A CN 202311434131 A CN202311434131 A CN 202311434131A CN 117477352 A CN117477352 A CN 117477352A
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- 230000004888 barrier function Effects 0.000 claims abstract description 93
- 239000004065 semiconductor Substances 0.000 claims abstract description 14
- 239000000969 carrier Substances 0.000 claims abstract description 10
- 230000002401 inhibitory effect Effects 0.000 claims abstract description 3
- 229910002704 AlGaN Inorganic materials 0.000 claims description 50
- 229910002601 GaN Inorganic materials 0.000 claims description 44
- 239000000758 substrate Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 9
- 230000006911 nucleation Effects 0.000 claims description 8
- 238000010899 nucleation Methods 0.000 claims description 8
- 230000000670 limiting effect Effects 0.000 claims description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000002131 composite material Substances 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000001954 sterilising effect Effects 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3407—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by special barrier layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
- H01S5/3216—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities quantum well or superlattice cladding layers
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention provides a quantum well light-emitting structure, comprising: a quantum well layer; the quantum barrier layer comprises an upper barrier layer and a lower barrier layer, wherein the upper barrier layer is arranged on the surface of the quantum well layer, the lower barrier layer is arranged on the surface of one end, far away from the upper barrier layer, of the quantum well layer, and the quantum barrier layer is used for inhibiting the overflow of carriers from the quantum well layer. According to the invention, the composite quantum barrier layer is arranged, so that the quantum well layer can be protected, the quantum well layer is prevented from being damaged, and the dissipation of carriers under high temperature can be inhibited, and further the working performance of the semiconductor laser can be effectively improved.
Description
Technical Field
The invention relates to the field of semiconductor devices, in particular to a quantum well light-emitting structure.
Background
The ultraviolet laser has important application prospect in the fields of ultraviolet curing, sterilization, biological detection and the like. The ultraviolet semiconductor laser has low photoelectric conversion efficiency, and the material has strong absorption to ultraviolet light, so the spontaneous heating effect of the ultraviolet laser is more obvious. The temperature of the ultraviolet laser is generally higher in the working process, in particular to a high-power ultraviolet laser. The laser performance is susceptible to high temperatures.
On the one hand, carriers under high temperature are easier to escape from the quantum well region and diffuse into the P region, thereby forming leakage current. On the other hand, more non-radiative recombination at high temperatures may be activated, thereby reducing the luminous efficiency of the device. As the junction temperature of the laser increases, the threshold current density of the laser increases, the slope efficiency decreases, and even a thermal roll-over effect occurs. Therefore, it is an urgent problem to design a structure capable of reducing adverse effects of temperature on a semiconductor laser.
Disclosure of Invention
Technical scheme (one)
In view of this, in order to overcome at least one aspect of the above-described problems, an embodiment of the present invention provides a quantum well light emitting structure including: a quantum well layer 160; the quantum barrier layer comprises an upper barrier layer 162 and a lower barrier layer 161, wherein the upper barrier layer 162 is arranged on the surface of the quantum well layer 160, the lower barrier layer 161 is arranged on the surface of one end, far away from the upper barrier layer 162, of the quantum well layer 160, and the quantum barrier layer is used for inhibiting the overflow of carriers from the quantum well layer 160.
Optionally, the upper barrier layer 162 includes: an upper GaN barrier layer 1621 disposed on a surface of the quantum well layer 160; an upper AlGaN barrier layer 1622 provided on one end surface of the upper GaN barrier layer 1621 remote from the quantum well layer 160; the lower barrier layer 161 includes: a lower GaN barrier layer 1612 disposed on an end surface of the quantum well layer 160 remote from the upper GaN barrier layer 1621; a lower AlGaN barrier layer 1611 is provided on an end surface of the lower GaN barrier layer 1612 remote from the quantum well layer 160.
Optionally, upper AlGaN barrier layer 1622 is doped with Si at a doping concentration comprising 1×10 17 cm -3 Up to 3X 10 19 cm -3 The lower AlGaN barrier layer 1611 is doped with Mg at a doping concentration of 1×10 17 cm -3 Up to 3X 10 20 cm -3 。
Alternatively, the material of the quantum well layer 160 includes InGaN or AlInGaN.
Optionally, the quantum well light emitting structure includes at least one quantum well layer 160.
Alternatively, the AlGaN content in the upper AlGaN base layer 1622 and the lower AlGaN base layer 1611 is 1% -30%.
An embodiment of the present invention provides a semiconductor laser including a quantum well light emitting structure, including: an n-type GaN layer 13; an AlGaN lower confinement layer 14 provided on one end surface of the n-type GaN layer 13; an undoped lower waveguide layer 15 provided on one end surface of the AlGaN lower confinement layer 14 away from the n-type GaN layer 13; the quantum well light emitting structure 16 is arranged on one end surface of the undoped lower waveguide layer 15 far away from the AlGaN lower limiting layer 14, and the lower AlGaN barrier layer 1611 is contacted with the surface of the undoped lower waveguide layer 15; the undoped upper waveguide layer 17 is arranged on the surface of one end of the quantum well light-emitting structure, which is far away from the undoped lower waveguide layer 1; an AlGaN upper confinement layer 18 provided on one end surface of the undoped upper waveguide layer 17 away from the upper AlGaN barrier layer 1622; the p-type GaN layer 19 is provided on an end surface of the AlGaN upper confinement layer 18 remote from the undoped upper waveguide layer 17.
Optionally, a substrate 10 is also included; a low temperature nucleation layer 11 disposed on the surface of the substrate; and one end of the high-temperature undoped GaN layer 12 is arranged on the surface of one end of the low-temperature nucleation layer 11 far away from the substrate 10, and the other end is contacted with the n-type GaN layer 13.
Optionally, the material of the substrate comprises: sapphire or gallium nitride or silicon carbide or silicon.
The embodiment of the invention provides a preparation method of a quantum well light-emitting structure, which is characterized by comprising the following steps: preparing a quantum well layer 160; a quantum barrier layer is prepared on the surface of the quantum well layer 160, the quantum barrier layer comprises an upper barrier layer 162 and a lower barrier layer 161, the upper barrier layer 162 is arranged on the surface of the quantum well layer 160, and the lower barrier layer 161 is arranged on the surface of one end, far away from the upper barrier layer 162, of the quantum well layer 160.
Drawings
Fig. 1 schematically illustrates a schematic diagram of a quantum well light emitting structure according to an embodiment of the present invention.
Fig. 2 schematically illustrates a schematic structural diagram of a semiconductor laser including a quantum well light emitting structure according to an embodiment of the present invention.
Detailed Description
The objects, technical solutions and advantages of the present invention will become more apparent, and the present invention will be further described in detail with reference to the accompanying drawings and specific embodiments.
Descriptions of structural embodiments and methods of the present invention are disclosed herein. It is to be understood that there is no intention to limit the invention to the particular disclosed embodiments, but that the invention may be practiced using other features, elements, methods and embodiments. Like elements in different embodiments are generally referred to by like numerals.
Fig. 1 schematically illustrates a schematic diagram of a quantum well light emitting structure according to an embodiment of the present invention.
As shown in fig. 1, in the present embodiment, the quantum well light emitting structure includes a quantum well layer 160; the quantum barrier layer is a composite structure and comprises an upper barrier layer 162 and a lower barrier layer 161, wherein the upper barrier layer 162 is arranged on the surface of the quantum well layer 160, and the lower barrier layer 161 is arranged on the surface of one end, far away from the upper barrier layer 162, of the quantum well layer 160.
In this embodiment, the upper barrier layer 162 includes an upper GaN barrier layer 1621 disposed on the surface of the quantum well layer 160; an upper AlGaN barrier layer 1622 is provided on an end surface of the upper GaN barrier layer 1621 remote from the quantum well layer 160.
In this embodiment, the lower barrier layer 161 includes: a lower GaN barrier layer 1612 disposed on an end surface of the quantum well layer 160 remote from the upper GaN barrier layer 1612; a lower AlGaN barrier layer 1611 is provided on an end surface of the lower GaN barrier layer 1612 remote from the quantum well layer 160.
In this embodiment, the material of the quantum well layer 160 includes InGaN or AlInGaN, and the quantum well layer 160 is protected by using a GaN barrier layer grown at the same temperature to prevent the quantum well layer 160 from being damaged.
In this embodiment, the quantum well light emitting structure includes at least one quantum well layer 160.
In this embodiment, the AlGaN content in the upper AlGaN barrier layer 1622 and the lower AlGaN barrier layer 1611 is 1% -30%.
In this embodiment, the upper AlGaN barrier layer 1622 is doped with Si at a doping concentration of 1×10 17 cm -3 Up to 3X 10 19 cm -3 The lower AlGaN barrier layer 1611 is doped with Mg at a doping concentration of 1×10 17 cm -3 Up to 3X 10 20 cm -3 。
In the embodiment, the AlGaN with higher Al component is adopted as a partial barrier layer and doped with ions, and the GaN/AlGaN composite barrier layer is adopted because of the large forbidden bandwidth of the AlGaN, so that the effective depth of the quantum well can be increased, the effective barrier height of the quantum barrier layer is further improved,
in this embodiment, the quantum barrier layer increases the limitation of carriers by increasing the barrier height of the carrier escaping from the quantum well layer, and prevents carriers from overflowing from the quantum well layer at high temperature, thereby improving the working performance of the semiconductor laser at high temperature.
Fig. 2 schematically illustrates a schematic structural diagram of a semiconductor laser including a quantum well light emitting structure according to an embodiment of the present invention.
As shown in fig. 2, the semiconductor laser includes a substrate 10, a low-temperature nucleation layer 11, a high-temperature undoped GaN layer 12, an n-type GaN layer 13, an AlGaN lower confinement layer 14, an undoped lower waveguide layer 15, a quantum well light emitting layer structure 16, an undoped upper waveguide layer 17, an AlGaN upper confinement layer 18, and a p-type GaN layer 19 stacked in this order in a growth direction.
In this embodiment, the material of the substrate includes: sapphire or gallium nitride or silicon carbide or silicon
The embodiment of the invention provides a preparation method of a semiconductor laser containing a quantum well light-emitting structure, which comprises the following steps:
step 1: annealing the substrate 10 in a hydrogen atmosphere, and cleaning the surface of the substrate;
step 2: the temperature is reduced to 500-620 ℃, and a low-temperature GaN nucleation layer 11 with the thickness of 20-30nm is grown, so as to provide nucleation centers for the subsequent growth materials;
step 3: epitaxially growing a high-temperature undoped GaN layer 12 on the low-temperature GaN nucleation layer 11, wherein the high-temperature undoped GaN layer is a template for the growth of subsequent materials;
step 4: growing a high temperature n-GaN layer 13 on the high temperature undoped GaN layer 12;
step 5: and a high-temperature AlGaN lower limiting layer 14 is extended on the high-temperature n-GaN layer 13, wherein the growth temperature of the high-temperature AlGaN lower limiting layer is 1000-1200 ℃, and the thickness of the high-temperature AlGaN lower limiting layer is 0.5-1 mu m.
Step 6: an undoped lower waveguide layer 15 is epitaxially grown on the high-temperature AlGaN lower confinement layer 14, and light is confined in the waveguide layer by using a refractive index difference between the AlGaN lower confinement layer 14 and the undoped lower waveguide layer 15.
Step 7: the quantum well light-emitting structure 16 is epitaxially grown on the undoped lower waveguide layer 15, the light-emitting wavelength of the quantum well light-emitting structure is 330 nm-390 nm, the lower barrier layer adopts a higher growth temperature, generally 800-1100 ℃, and the upper barrier layer adopts the same growth temperature as the quantum well layer, generally 650-850 ℃. By raising the barrier height at which carriers escape from the quantum well layer 160, the confinement of carriers is increased, the overflow of carriers at high temperature is prevented, and the temperature characteristics of the ultraviolet semiconductor laser are improved.
Step 8: epitaxially growing an undoped upper waveguide layer 17 on the quantum well light-emitting layer structure 16;
step 9: an AlGaN upper confinement layer 18 is epitaxially grown on the undoped upper waveguide layer 17, with the light confined in the waveguide layer by the refractive index difference between the AlGaN upper confinement layer and the undoped upper waveguide layer. The growth temperature of the AlGaN upper limiting layer is 1000-1200 ℃, and the thickness of the AlGaN upper limiting layer is 0.5-1 mu m.
Step 10: a p-GaN layer 19 is epitaxially grown on the AlGaN upper confinement layer 18 to form an ohmic contact layer for the device structure.
The foregoing embodiments have been provided for the purpose of illustrating the general principles of the present invention, and are more fully described herein with reference to the accompanying drawings, in which the principles of the present invention are shown and described, and in which the general principles of the invention are defined by the appended claims.
Claims (10)
1. A quantum well light emitting structure comprising:
a quantum well layer (160);
the quantum barrier layer comprises an upper barrier layer (162) and a lower barrier layer (161), wherein the upper barrier layer (162) is arranged on the surface of the quantum well layer (160), the lower barrier layer (161) is arranged on the surface, far away from one end of the upper barrier layer (162), of the quantum well layer (160), and the quantum barrier layer is used for inhibiting the overflow of carriers from the quantum well layer (160).
2. The structure of claim 1, wherein the upper barrier layer (162) comprises:
an upper GaN barrier layer (1621) provided on the surface of the quantum well layer (160);
an upper AlGaN barrier layer (1622) provided on one end surface of the upper GaN barrier layer (1621) remote from the quantum well layer (160);
the lower barrier layer (161) includes:
a lower GaN barrier layer (1612) disposed on an end surface of the quantum well layer (160) remote from the upper GaN barrier layer (1621);
and a lower AlGaN barrier layer (1611) provided on an end surface of the lower GaN barrier layer (1612) remote from the quantum well layer (160).
3. The structure of claim 2, wherein the upper AlGaN barrier layer (1622) is doped with Si at a doping concentration comprising 1 x 10 17 cm -3 Up to 3X 10 19 cm -3 The lower AlGaN barrier layer (1611) is doped with Mg, and the doping concentration comprises 1×10 17 cm -3 Up to 3X 10 20 cm -3 。
4. The structure of claim 1, wherein the material of the quantum well layer (160) comprises InGaN or AlInGaN.
5. The structure of claim 1, wherein the quantum well light emitting structure comprises at least one quantum well layer (160).
6. The structure of claim 2, wherein the AlGaN content in the upper AlGaN barrier layer (1622) and the lower AlGaN barrier layer (1611) is 1% -30%.
7. A semiconductor laser comprising the quantum well light emitting structure of any one of claims 1 to 6, comprising:
an n-type GaN layer (13);
an AlGaN lower confinement layer (14) provided on one end surface of the n-type GaN layer (13);
an undoped lower waveguide layer (15) provided on an end surface of the AlGaN lower confinement layer (14) remote from the n-type GaN layer (13);
the quantum well light-emitting structure (16) is arranged on one end surface of the undoped lower waveguide layer (15) far away from the AlGaN lower limiting layer (14), and the lower AlGaN barrier layer (1611) is contacted with the surface of the undoped lower waveguide layer (15);
the undoped upper waveguide layer (17) is arranged on one end surface of the quantum well light-emitting structure, which is far away from the undoped lower waveguide layer (1);
an AlGaN upper confinement layer (18) provided on an end surface of the undoped upper waveguide layer (17) remote from the upper AlGaN barrier layer (1622);
and a p-type GaN layer (19) which is arranged on one end surface of the AlGaN upper confinement layer (18) which is far away from the undoped upper waveguide layer (17).
8. The semiconductor laser of claim 7, further comprising:
a substrate (10);
a low temperature nucleation layer (11) disposed on the substrate surface;
and one end of the high-temperature undoped GaN layer (12) is arranged on the surface of one end of the low-temperature nucleation layer (11) far away from the substrate (10), and the other end of the high-temperature undoped GaN layer is contacted with the n-type GaN layer (13).
9. The semiconductor laser of claim 8, wherein the material of the substrate comprises: sapphire or gallium nitride or silicon carbide or silicon.
10. A method of manufacturing a quantum well light emitting structure as claimed in any one of claims 1 to 6, comprising:
preparing a quantum well layer (160);
the quantum well layer (160) surface preparation quantum barrier layer, the quantum barrier layer includes upper barrier layer (162) and lower barrier layer (161), upper barrier layer (162) set up the surface on quantum well layer (160), lower barrier layer (161) set up quantum well layer (160) keep away from upper barrier layer (162) one end surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311434131.6A CN117477352A (en) | 2023-10-31 | 2023-10-31 | Quantum well light-emitting structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311434131.6A CN117477352A (en) | 2023-10-31 | 2023-10-31 | Quantum well light-emitting structure |
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| Publication Number | Publication Date |
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| CN117477352A true CN117477352A (en) | 2024-01-30 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311434131.6A Pending CN117477352A (en) | 2023-10-31 | 2023-10-31 | Quantum well light-emitting structure |
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| CN (1) | CN117477352A (en) |
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2023
- 2023-10-31 CN CN202311434131.6A patent/CN117477352A/en active Pending
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