CN117464183A - Laser additive manufacturing method and system for functional microelectronic device based on continuous laser - Google Patents
Laser additive manufacturing method and system for functional microelectronic device based on continuous laser Download PDFInfo
- Publication number
- CN117464183A CN117464183A CN202311572924.4A CN202311572924A CN117464183A CN 117464183 A CN117464183 A CN 117464183A CN 202311572924 A CN202311572924 A CN 202311572924A CN 117464183 A CN117464183 A CN 117464183A
- Authority
- CN
- China
- Prior art keywords
- laser
- ink
- processing
- semiconductor
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 57
- 238000004377 microelectronic Methods 0.000 title claims abstract description 34
- 239000000654 additive Substances 0.000 title claims abstract description 20
- 230000000996 additive effect Effects 0.000 title claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 54
- 239000002184 metal Substances 0.000 claims abstract description 54
- 239000004065 semiconductor Substances 0.000 claims abstract description 53
- 238000007639 printing Methods 0.000 claims abstract description 42
- 239000006059 cover glass Substances 0.000 claims abstract description 17
- 238000006243 chemical reaction Methods 0.000 claims abstract description 8
- 238000010521 absorption reaction Methods 0.000 claims abstract description 7
- 230000001105 regulatory effect Effects 0.000 claims abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 63
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 51
- 238000000034 method Methods 0.000 claims description 32
- 229910052697 platinum Inorganic materials 0.000 claims description 27
- 239000011787 zinc oxide Substances 0.000 claims description 25
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 20
- 230000008569 process Effects 0.000 claims description 15
- 229910052709 silver Inorganic materials 0.000 claims description 15
- 239000004332 silver Substances 0.000 claims description 15
- 239000002086 nanomaterial Substances 0.000 claims description 13
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 12
- 238000003754 machining Methods 0.000 claims description 11
- 230000001276 controlling effect Effects 0.000 claims description 10
- 238000007648 laser printing Methods 0.000 claims description 9
- 230000033001 locomotion Effects 0.000 claims description 7
- 230000000694 effects Effects 0.000 claims description 6
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 claims description 6
- 239000000243 solution Substances 0.000 claims description 6
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 5
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 5
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- XIOUDVJTOYVRTB-UHFFFAOYSA-N 1-(1-adamantyl)-3-aminothiourea Chemical group C1C(C2)CC3CC2CC1(NC(=S)NN)C3 XIOUDVJTOYVRTB-UHFFFAOYSA-N 0.000 claims description 3
- ZEYKLMDPUOVUCR-UHFFFAOYSA-N 2-chloro-5-(trifluoromethyl)benzenesulfonyl chloride Chemical compound FC(F)(F)C1=CC=C(Cl)C(S(Cl)(=O)=O)=C1 ZEYKLMDPUOVUCR-UHFFFAOYSA-N 0.000 claims description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 3
- 239000007864 aqueous solution Substances 0.000 claims description 3
- 210000001747 pupil Anatomy 0.000 claims description 3
- 229910001961 silver nitrate Inorganic materials 0.000 claims description 3
- 239000001509 sodium citrate Substances 0.000 claims description 3
- HRXKRNGNAMMEHJ-UHFFFAOYSA-K trisodium citrate Chemical compound [Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O HRXKRNGNAMMEHJ-UHFFFAOYSA-K 0.000 claims description 3
- 229940038773 trisodium citrate Drugs 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims description 2
- 239000011259 mixed solution Substances 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 238000003756 stirring Methods 0.000 claims description 2
- 238000005245 sintering Methods 0.000 abstract description 4
- 238000002360 preparation method Methods 0.000 abstract description 3
- 238000000137 annealing Methods 0.000 abstract description 2
- 238000007654 immersion Methods 0.000 abstract description 2
- 230000001737 promoting effect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 6
- 238000000059 patterning Methods 0.000 description 5
- RNWHGQJWIACOKP-UHFFFAOYSA-N zinc;oxygen(2-) Chemical group [O-2].[Zn+2] RNWHGQJWIACOKP-UHFFFAOYSA-N 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 238000006722 reduction reaction Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 238000007641 inkjet printing Methods 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000002082 metal nanoparticle Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 241000254173 Coleoptera Species 0.000 description 1
- 241000406668 Loxodonta cyclotis Species 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- IWLXWEWGQZEKGZ-UHFFFAOYSA-N azane;zinc Chemical compound N.[Zn] IWLXWEWGQZEKGZ-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- VEPSWGHMGZQCIN-UHFFFAOYSA-H ferric oxalate Chemical compound [Fe+3].[Fe+3].[O-]C(=O)C([O-])=O.[O-]C(=O)C([O-])=O.[O-]C(=O)C([O-])=O VEPSWGHMGZQCIN-UHFFFAOYSA-H 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000009022 nonlinear effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 229910001923 silver oxide Inorganic materials 0.000 description 1
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Substances [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/34—Laser welding for purposes other than joining
- B23K26/342—Build-up welding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y10/00—Processes of additive manufacturing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y30/00—Apparatus for additive manufacturing; Details thereof or accessories therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y80/00—Products made by additive manufacturing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/25—Process efficiency
Abstract
The invention discloses a continuous laser-based functional microelectronic device laser additive manufacturing method and a continuous laser-based functional microelectronic device laser additive manufacturing system, wherein the manufacturing method comprises the following two parts: (1) printing of metal wires: firstly, metal ink is dripped on the surface of a cover glass and is fixed on a processing platform formed by a three-dimensional nanometer positioning table and a two-dimensional automatic objective table; laser power is regulated and controlled through the acousto-optic modulator and the radio frequency driver, and the laser power is focused in the ink through the objective lens of the water immersion microscope, so that printing of the metal wire is realized. (2) semiconductor printing: and (3) dripping the prepared semiconductor ink on the metal wire, positioning a laser focus right below the metal wire, and promoting the reaction of the semiconductor ink by means of local heat generated by single photon absorption of a metal structure. The processing system organically integrates the continuous laser system, the three-dimensional platform system and the light path system, and can realize the accurate preparation of the functional microelectronic device by using only a single laser, and has high processing precision, simple operation flow and no need of subsequent sintering and annealing operations.
Description
Technical Field
The invention relates to the fields of advanced manufacturing, laser processing, additive manufacturing, patterning processing, microelectronic printing and the like, in particular to the field of printed circuits, and particularly relates to a laser additive manufacturing method and system of a functional microelectronic device based on continuous laser.
Background
The manufacture of high-precision micro-nano electronic devices generally depends on the traditional clean room processes such as photoetching, film plating, etching and the like, and the required equipment is expensive, the process flow is complex, and the small-batch customization cost is high. Printing electronics technology uses printing technology and processes to manufacture electronic devices, and has flexible, fast, customized and other processing advantages, including mainly inkjet printing, aerosol printing and the like, and in particular, inkjet printing technology is most commonly used. However, the minimum feature size that can be processed in these prior arts is limited (usually in the order of tens of micrometers), and high temperature post-treatment is often required, and the processing process has technical problems such as blockage of the print head, and the printing material is mainly conductive material, so that it is difficult to realize high-precision printing of the semiconductor material required by the functional micro-nano electronic device.
The laser micro-nano printing technology is widely applied to high-precision micro-nano structure printing, and the basic principle is based on the nonlinear effect of laser pulse and materials, and has the advantages of high processing precision, small thermal influence and the like. At present, micro-nano processing of a metal conductor material can be realized through laser two-photon reduction; the laser-induced hydrothermal growth can realize high-precision processing of semiconductor materials such as zinc oxide. However, at present, the principle involved in laser processing of metal materials and semiconductor materials is different from that of a laser light source, so that the printing of a multi-material micro-nano electronic device needs to integrate, switch and calibrate a plurality of sets of light source systems, which clearly increases the complexity of a processing system and reduces the reliability. Meanwhile, a plurality of light source systems, in particular to a femtosecond laser system related to two-photon metal reduction, lead to high cost and huge volume of a processing system.
Disclosure of Invention
Aiming at least one of the technical problems, the invention aims to provide a continuous laser-based method and a continuous laser-based system for manufacturing a functional microelectronic device by laser additive, which can realize high-precision printing of platinum/silver and semiconductor zinc oxide by a single continuous laser source and apply the high-precision printing to processing of the functional microelectronic device. Compared with a multi-light source laser processing system, the system does not need an expensive femtosecond laser light source, and has low cost, small volume and high reliability.
The technical scheme of the invention is as follows:
one of the purposes of the invention is to provide a laser additive manufacturing system of a functional microelectronic device based on continuous laser, which comprises a 532nm continuous wave laser, an acousto-optic modulator, a lens, a galvanometer, a reflector, an objective lens and a processing platform arranged at the bottom of the objective lens and used for placing a sample to be processed, wherein the acousto-optic modulator, the lens, the galvanometer, the reflector and the objective lens are sequentially arranged along the path of a laser beam;
the acousto-optic modulator is connected with the radio frequency driver, the radio frequency driver is powered by an independent power supply, analog signals and digital signals are provided by the signal source to regulate and control the switching and diffraction efficiency in real time, and the laser power is regulated and controlled by the acousto-optic modulator and the radio frequency driving module;
the lens is used for collimation, focusing and beam expansion of laser beams;
the vibrating mirror is used for controlling deflection of the laser beam;
the reflecting mirrors are used for vertically incidence of the laser beams emitted after the oscillating mirror is adjusted into the objective lens, the number of the reflecting mirrors is two, and the two reflecting mirrors are arranged in a mirror symmetry mode;
the objective lens is used for focusing the laser beam emitted by the 532nm continuous wave laser on the sample to be processed so as to perform laser scanning printing;
the processing platform comprises a two-dimensional automatic object stage capable of moving on a horizontal plane and a heavy-load XYZ three-dimensional nanometer positioning table arranged above the two-dimensional automatic object stage, and a sample to be processed is horizontally arranged on the heavy-load XYZ three-dimensional nanometer positioning table;
the digital-to-analog converter is connected with the computer, the acousto-optic modulator, the galvanometer and the processing platform are respectively connected with the digital-to-analog converter through signals, and the processing platform is controlled to move according to a preset processing path through control of a software interface in the computer so as to realize movement of a laser focus on the sample to be processed.
Preferably, another object of the present invention is to provide a simple manufacturing method of laser additive material for high precision microelectronic devices based on continuous laser, said manufacturing method being based on the manufacturing system described above, comprising the steps of:
processing a metal micro-nano structure: dropping metal ink on a cover glass fixed on the light-emitting side of an objective lens, horizontally placing the cover glass on a processing platform, adopting laser power of 0.40-3.35 mW at the entrance pupil of the objective lens, controlling the processing speed to be 10-100 mu m/s, focusing the laser in the metal ink, controlling the processing platform to move according to a preset processing path in the printing process so as to control the laser focus to move relative to the metal ink on the cover glass, and finishing the processing of the metal micro-nano structure, wherein the metal micro-nano structure is a metal wire;
printing of a semiconductor: and (3) dripping the prepared semiconductor ink on the surface of the metal wire, wherein the laser power is 6-20 mW, the processing speed is 10-100 mu m/s, the laser focus is positioned right below the metal wire, and the reaction of the semiconductor ink is promoted by virtue of local heat generated by single photon absorption in the metal, so that the laser printing of the semiconductor is completed.
Preferably, the method further comprises the following steps: and (3) silanizing the cover glass: the glass cover slip was first treated with oxygen plasma for 10 minutes and then immersed in a mixed solution of toluene and (3-aminopropyl) triethoxysilane at an ambient temperature for 60 minutes, wherein the volume ratio of (3-aminopropyl) triethoxysilane to toluene was 0.2%.
Preferably, after finishing the processing of the metal micro-nano structure, the method further comprises the following steps: cleaning and drying the sample in a pure water solution;
after the printing step of the semiconductor is completed, the method further comprises the following steps: the sample is washed in a pure aqueous solution, then washed in an ethanol solution and dried.
Preferably, in the processing step of the metal micro-nano structure, when the processing speed is 10 mu m/s, the laser power can be effectively processed within the range of 0.4-1.4 and mW, and the laser power is maintained between 0.75 and 1.05 mW, so that the processing effect is optimal;
when the machining speed is 25 mu m/s, the effective power interval is 0.8-2.25 mW, and the optimal power interval is 1.45-1.65 mW;
when the machining speed is 50 mu m/s, the effective power interval is 1.5-2.50 mW, and the optimal power interval is 2.10-2.50 mW;
when the machining speed is 100 mu m/s, the effective power interval is 2.0-3.35 mW, and the optimal power interval is 3.15-3.35 mW.
Preferably, the metal ink is platinum ink or silver ink, the platinum ink is prepared by mixing ferric ammonium oxalate trihydrate and ammonium tetrachloroplatinate according to a volume ratio of 1:1, and the silver ink is prepared by mixing and stirring 83 mM silver nitrate, 62 mM trisodium citrate and 14M ammonia water.
Preferably, the semiconductor ink is a semiconductor zinc oxide ink, and the semiconductor zinc oxide ink is zinc nitrate hexahydrate;
the pH of the semiconductor ink is controlled to be 10.0 by ammonia water.
Preferably, in the step of printing the semiconductor, the size of the printed semiconductor structure becomes larger as the laser power increases, and in the case that the laser power is unchanged, the size of the printed semiconductor structure becomes larger as the fixed-point exposure time increases.
It is a further object of the present invention to provide a use of the above-described manufacturing system or manufacturing method for manufacturing high precision micro-nano electronic devices.
It is yet another object of the present invention to provide a functional microelectronic device manufactured using the manufacturing system described above or any of the manufacturing methods described above.
Compared with the prior art, the invention has the advantages that:
the method and the system for manufacturing the laser additive of the functional microelectronic device based on the continuous laser can realize high-precision printing of platinum or silver and semiconductor zinc oxide by using a single continuous laser light source, and can be applied to processing of the functional microelectronic device. Compared with a multi-light source laser processing system, the system does not need an expensive femtosecond laser light source, and has low cost, small volume and high reliability. 532 The nm continuous wave laser causes the reduction of metal ions through single photon absorption, and formed metal nano particles are sprayed out from a laser focus and deposited on a cover glass, and metal wires are formed sequentially along with the movement of the laser focus. The laser focus is focused below the printed metal wire, and the single photon light absorption of the metal leads to the rapid rise of the local temperature field, so that the reaction of the semiconductor ink dripped on the surface of the metal wire is driven, and the printing of the semiconductor structure is completed. By controlling the laser power and the processing speed in the metal printing and the semiconductor printing processes, the minimum feature size which can be realized is smaller than 1 mu m, and the processing precision is high. The printed zinc oxide semiconductor structure can form good contact with the metal platinum or silver wire, has excellent conductive performance, and does not need any annealing sintering operation.
Drawings
The invention is further described below with reference to the accompanying drawings and examples:
FIG. 1 is a physical diagram of a platinum ink and a silver ink according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a laser additive manufacturing system for a functional microelectronic device based on continuous laser according to an embodiment of the present invention (the box below the dashed line is an enlarged schematic diagram of the processing interface);
FIG. 3 is a schematic diagram of effective/optimal power intervals during metal micro-nano structure processing of a continuous laser-based functional microelectronic device laser additive manufacturing system according to an embodiment of the present invention;
FIG. 4 is a schematic illustration of metal patterning processed by a continuous laser-based functional microelectronic device laser additive manufacturing system and method of manufacture employing an embodiment of the present invention;
FIG. 5 is a schematic diagram of the impact of laser processing power on the structural dimensions of zinc oxide during semiconductor printing using a continuous laser-based functional microelectronic device laser additive manufacturing system and method of the present invention;
FIG. 6 is a schematic diagram of the effect of spot exposure time on the size of zinc oxide structures during semiconductor printing using a continuous laser-based functional microelectronic device laser additive manufacturing system and method of the present invention;
FIG. 7 is a schematic diagram of a spot exposure processing of a platinum substrate and zinc oxide array using a continuous laser-based functional microelectronic device laser additive manufacturing system and method of manufacture in accordance with an embodiment of the present invention;
fig. 8 is a functional microelectronic device processed using a continuous laser-based functional microelectronic device laser additive manufacturing system and method of manufacture in accordance with an embodiment of the present invention.
Wherein, 1, 532nm continuous wave lasers; 2. an acousto-optic modulator; 3. a radio frequency driver; 4. a power supply; 5. a lens; 6. vibrating mirror; 7. a reflecting mirror; 8. an objective lens; 9. a processing platform; 91. heavy-duty XYZ three-dimensional nanometer positioning table; 92. a two-dimensional automatic stage; 93. a controller; 10. a digital-to-analog converter; 11. a computer; 12. and (5) covering a glass slide.
Detailed Description
The objects, technical solutions and advantages of the present invention will become more apparent by the following detailed description of the present invention with reference to the accompanying drawings. It should be understood that the description is only illustrative and is not intended to limit the scope of the invention. In addition, in the following description, descriptions of well-known structures and techniques are omitted so as not to unnecessarily obscure the present invention.
Referring to fig. 2, the laser additive manufacturing system of the functional microelectronic device based on continuous laser according to the embodiment of the present invention includes a 532nm continuous wave laser 1, an acousto-optic modulator 2, a lens 5, a galvanometer 6, a reflector 7, an objective lens 8 and a processing platform 9. Wherein the acousto-optic modulator 2, the lens 5, the galvanometer 6, the reflector 7 and the objective lens 8 are arranged in sequence along the laser beam path. Specifically, the acousto-optic modulator 2 is disposed on the light emitting side of the 532nm continuous wave laser 1 and is connected with the radio frequency driver 3, and in the embodiment of the present invention, the laser power before 5 is adjusted by the acousto-optic modulator 2 and the radio frequency driver 3 together. Preferably, the radio frequency driver 3 is powered by an independent power supply 4, and provides analog signals and digital signals through a signal source to perform real-time regulation and control of the switching and diffraction efficiency of the laser. The lens 5 is disposed between the light emitting side of the acousto-optic modulator 2 and the light entering side of the galvanometer 6, and the lens 5 is used for collimation, focusing and beam expansion of the laser beam, as shown in fig. 2, the lens 5 of the present invention is a double lens 5 composed of a convex lens 5 and a concave lens 5. The vibrating mirror 6 is arranged on the light emitting side of the lens 5 and is used for controlling deflection of laser beams and assisting in realizing large-area processing. The reflecting mirror 7 includes two mirrors for changing the direction of the laser beam so that the laser light on the light outgoing side of the galvanometer 6 can be incident on the objective lens 8 in a vertically downward direction as shown in fig. 2 and focused on the light outgoing side of the objective lens 8. The two mirrors 7 shown in fig. 2 are arranged in mirror symmetry, left and right, in particular, one mirror 7 is arranged above the objective 8 at an angle of 45 ° to the horizontal and the other mirror 7 is arranged above the vibrating mirror 6 at an angle of 135 ° to the horizontal. The processing platform 9 is disposed directly below the objective lens 8, and specifically includes a heavy-duty XYZ three-dimensional nano positioning table 91 and a two-dimensional automatic stage 92 in this order from top to bottom as shown in fig. 2. A glass substrate (preferably a cover glass 12 in the embodiment of the present invention) as a substrate at the time of processing a sample to be processed is fixed on a heavy-duty XYZ three-dimensional nano-positioning table 91. In the embodiment of the invention, the objective lens 8 is fixed above the processing platform 9, so that the laser focus of the laser beam emitted from the objective lens 8 can be controlled by the galvanometer 6 to scan in a two-dimensional plane during the processing process, and the laser printing of the product is completed in cooperation with the processing platform 9. In the embodiment of the invention, the sample to be processed is controlled to move in a three-dimensional space through the processing platform 9, so that the laser focus moves in three dimensions relative to the sample to be processed. The digital-to-analog converter 10 is connected with a computer 11 (such as a notebook computer, a desktop computer, etc., preferably a notebook computer in the embodiment of the invention), the acousto-optic modulator 2, the galvanometer 6 and the processing platform 9 are respectively connected with the digital-to-analog converter 10 through signals, corresponding software is preloaded in the computer 11, and the processing platform 9 is controlled to move according to a preset processing path through the control of a software interface in the computer 11 so as to realize the movement of a laser focus on a sample to be processed. It should be noted that the processing platform 9 further includes a controller 93, and the processing platform 9 is connected to the digital-to-analog converter 10 through the controller 93.
Specifically, the embodiment of the invention is realized by the following modes:
1. designing and building a continuous laser processing system:
(1) And (3) an optical path system: 532 A nm continuous wave laser (Coherent, verdi C12) is used for patterning of metallic materials such as platinum and silver and zinc oxide semiconductor materials and for the fabrication of microelectronic devices. 532nm continuous laser power is regulated and controlled by an acousto-optic modulator 2 (M0006-QL 110-030-532) and a radio frequency driver 3 (RD 1005-110-24-025-CA), and focused in platinum ink and/or silver ink and zinc oxide ink respectively through a water immersion microscope objective lens (Olympus, UPLSAPO60 XW) for printing of platinum and/or silver and semiconductor zinc oxide. Fig. 1 shows a physical diagram of platinum ink (left panel) and silver ink (right panel). The radio frequency driver 3 of the AOM (acousto-optic modulator 2) is powered by an independent power supply 4, and provides analog signals and digital signals through a signal source to perform real-time regulation and control of switching and diffraction efficiency, namely, the regulation of the power of the 532nm continuous wave laser 1 is realized. The specific principles of the acousto-optic modulator 2 and the radio frequency driver 3 for adjustment of the laser power of the 532nm continuous wave laser 1 are not described and defined and are readily known and implemented by those skilled in the art.
(2) Motion system: the movement of the sample to be processed is achieved using a combination of a heavy-duty XYZ three-dimensional nano-positioning stage 91 (SYMC, NS-XY200Z100-01, 200 [ mu ] m x 200 [ mu ] m stroke) and a two-dimensional automated electrode platform (SYMC, XWJ-50R-2G, 50 mm x 50 mm stroke). Platinum ink or silver ink is dripped on the cover glass 12 and fixed on the processing platform 9, specifically the heavy duty XYZ three-dimensional nano-positioning table 91. The objective lens 8 is mounted on top of the processing platform 9, and laser is focused on the interface between the ink and the cover glass 12 (as shown in the enlarged view of fig. 2) through the objective lens 8, so that printing of the metal micro-nano structure is realized. Fig. 2 shows an overall construction of a continuous laser processing system and a partially enlarged view of the platinum wire manufacturing process, from which we can see that the light source in this design is provided by a continuous wave laser having a wavelength of 532 nm. The cover glass 12 with the platinum ink is placed on the surface of the processing platform 9, and the laser scans the inside of the ink to realize the efficient preparation of the metal wire. The digital-to-analog converter 10 realizes real-time coordination between the galvanometer 6 and a software interface (not shown) to finish accurate regulation and control of a laser scanning path. The specific regulatory principles are not described or defined herein and are readily known and implemented by those skilled in the art.
(3) Galvanometer 6 system: the vibrating mirror 6 is connected with a notebook computer through a digital-to-analog converter 10, and the optical scanning vibrating mirror 6 can be precisely controlled to deflect along a preset path through the control of a software interface, so that flexible adjustment of a processing path is realized. The working principle of the galvanometer 6 is that position signals are input into two swinging motors (not shown) of the galvanometer 6, so that the two swinging motors swing by a certain angle according to the preset voltage and angle conversion ratio, and a reflector fixed with the motors synchronously rotates by a certain angle, thereby realizing the deflection of laser beams. The specific structure of the vibrating mirror 6 is known in the prior art, and the specific structure and working principle thereof are also easily known to those skilled in the art.
2. Laser printing technology and technology for platinum/silver and semiconductor zinc oxide
In the embodiment of the invention, platinum wires or silver wires are printed out through 532nm continuous laser and used as a base material for processing the functional microelectronic device. In order to print out uniform platinum or silver lines, we used a laser power of 0.40-3.35 mW at the entrance pupil of the objective lens 8, with a focusing speed controlled between 10-100 μm/s. After laser irradiation, the samples were rinsed in a pure aqueous solution for 5 minutes and blow-dried with nitrogen. Next, the prepared zinc oxide ink was dropped onto the surface of the platinum wire or the silver wire. Preferably, the platinum ink in the embodiment of the invention is prepared by mixing ferric ammonium oxalate trihydrate and ammonium tetrachloroplatinate according to the volume ratio of 1:1, and is used for printing platinum wires. The metallic platinum ink is dripped on the upper surface of the cover glass 12 by a pipette gun, the focused 532nm continuous laser leads to chemical reduction of Pt ions through single photon absorption of the ferric oxalate photosensitizer, and formed Pt nano particles can be sprayed out from a laser focus or sintered on the cover glass 12 through local heating. As the laser focus moves, platinum wires are also formed in sequence. In the embodiment of the invention, the silver nitrate 83 mM, the trisodium citrate 62 mM and the 14M ammonia water are mixed and stirred, and the specific principle is consistent with that of the platinum wire, so that the description is omitted.
Applicants have found that laser scanning speed and laser processing power are two important parameters in sample processing in order to efficiently process high quality platinum wire structures. We explore the relationship between the two, optimizing the laser processing technique. In particular, we can see from fig. 3: when the machining speed is 10 mu m/s, the laser power can be effectively machined within the range of 0.40-1.40 mW, the laser power is maintained between 0.75-1.05 mW, and the machining effect is optimal; when the machining speed is 25 mu m/s, the effective power interval is 0.8-2.25 mW, and the optimal power interval is 1.45-1.65 mW; when the machining speed is 50 mu m/s, the effective power interval is 1.50-2.50 mW, and the optimal power interval is 2.10-2.50 mW; when the machining speed is 100 mu m/s, the effective power interval is 2.00-3.35 mW, and the optimal power interval is 3.15-3.35 mW.
In the processing process of the zinc oxide semiconductor, the laser processing power is 6-20 mW, and the processing speed is 10-100 mu m/s. The laser focus is positioned right below the platinum wire processed by laser printing, and the reaction of zinc oxide ink is promoted by local heat generated by single photon absorption in platinum. The proper selection of the pH value of the ink can effectively avoid the self-dissolution of the zinc oxide structure after laser printing. We adjusted the pH of the ink by controlling the ammonia concentration, and the optimum pH was 10.0. Preferably, the present inventionIn the examples, zinc nitrate hexahydrate was used in the semiconductor zinc oxide ink, and the pH of the ink was adjusted by ammonia. During processing, the focus of the continuous laser light emitted by the continuous wave laser 1 is first focused under the printed platinum wire, and the single photon light absorption of the plasma in the platinum causes intense local heating, thereby driving the reaction of the zinc oxide ink. After heating, the zinc ammonia complex is dissociated and insoluble Zn (OH) 2 The precipitate is then converted to ZnO, thereby completing laser printing of the zinc oxide semiconductor structure.
3. Patterning of metals and fabrication of functional microelectronic devices
Fig. 4 shows various patterning models for 532nm continuous laser and platinum ink processing: "elephant", "beetle", and the like. As can be seen from the figure, each pattern has clear morphology and complete structure, and further proves the stability and reliability of continuous laser processing of metals.
Applicants have found that laser processing power and spot exposure time are two important factors affecting the size of the semiconductor structure being processed. For this reason, we have conducted intensive studies. Fig. 5 shows the effect of laser processing power on structure size, focusing 532nm continuous laser onto a fixed location of silver wire, and fig. 5 (a) shows the process of increasing the size of the printed zinc oxide structure as the laser power increases (8.60 mW gradually increases to 19.35 mW) from top to bottom. Fig. 5 (b) and (c) are partial enlarged views of the processed zinc oxide structure at powers of 8.60 mW and 19.35 mW, respectively.
Next, we studied the effect of the spot exposure time on the process dimensions. As shown in fig. 6, the laser processing power for each row was kept constant, and the exposure time was increased from left to right (from 2 ms to 4096 ms), and the size of the zinc oxide structure was also increased.
FIG. 7 shows 532nm continuous laser processed large area platinum substrates and successfully prepared zinc oxide semiconductor arrays on the basis thereof; in fig. 7 (a), the laser power increases gradually from top to bottom, from 3.225 mW to 9.675 mW, and the size of the corresponding zinc oxide also increases gradually; fig. 7 (b) is a partial enlarged view of the zinc oxide array structure.
The embodiment of the invention also provides an application of the manufacturing system or the manufacturing method of the embodiment in manufacturing the high-precision micro-nano electronic device. And functional microelectronic devices fabricated using the fabrication systems or fabrication methods of the above embodiments. Specifically, the embodiment of the invention is described by taking a diode as an example.
Diodes are one of the earliest-emerging semiconductor devices and are widely used in various electronic circuits. The basic performance of the diode is unidirectional conductivity, and when forward voltage is applied between two poles of the diode, the diode is turned on, and when reverse voltage is applied, the diode is turned off. Fig. 8 (a) and 8 (b) show a single diode and a parallel diode, respectively, consisting of platinum wires (about 0.8 μm wide), silver wires and an intermediate ZnO semiconductor. The circuit with different functions is formed by reasonably designing the arrangement of diodes, resistors, capacitors, inductors and other components, so that the functions of rectifying alternating current, detecting modulated signals, limiting amplitude, clamping amplitude, stabilizing power supply voltage and the like can be realized. The thickness of the ZnO structure obtained by printing is controlled through the optimized laser printing parameters, so that the adjustment of the channel length of the diode is realized. The effective ratio of the channel length to the channel width of the diode shown in the upper graph (fig. 8 (a) and 8 (b)) is 176.
The embodiment of the invention designs and laser prints a 6×6 array type memristor safety circuit based on the randomness of the electrical performance of the single memristor, as shown in fig. 8 (c) and 8 (d). In fig. 8 (c), black squares at the periphery of the circuit are contact pads. When the circuit is stimulated by external voltage, a unique and different conductive filament structure is formed inside each individual memristor, similar to the uniqueness of human fingerprints, so that different current corresponds. Comparing the current responses of all memristors to the average current, a set of digital arrays containing '0' and '1' can be obtained. The array is a unique cipher of the microcircuit, can not be cloned from physical aspect, and is a safe and reliable encryption microelectronic device. The manufacturing system and the manufacturing method of the embodiment of the invention prove that the functional microelectronic device printed by the manufacturing system and the manufacturing method has excellent conductive performance.
In summary, in the processing system of the embodiment of the present invention, a single laser (532 nm) is adopted, and during the printing process, 532nm continuous wave laser light causes metal ions to be reduced through single photon absorption, and formed metal nanoparticles are ejected from the laser focus and deposited on the cover glass 12, so that metal wires are sequentially formed along with the movement of the laser focus. The laser focus is focused under the printed metal wire, and the single photon light absorption of the plasma in the metal leads to a strong local temperature field, so that the reaction of the semiconductor ink is driven, and the printing of the semiconductor structure is completed. By controlling the laser power and the processing speed in the metal printing and the semiconductor printing processes, the minimum characteristic dimension of printing is less than 1 mu m, and the processing precision is high. The printed zinc oxide semiconductor structure can form good contact with the metal platinum/silver wire, has excellent conductive performance, and does not need any subsequent sintering operation. That is, the present invention enables printed functional microelectronic devices to have excellent electrical conductivity by constructing a laser printing system and optimizing laser power and processing speed in metal printing and semiconductor printing.
In summary, the advantages and positive effects of the embodiments of the present invention
(1) The preparation flow is simple, and complex process flow and harsh processing environment are not needed;
(2) The continuous laser has low price, and can greatly reduce the processing cost;
(3) The processing precision is high, the minimum characteristic dimension is less than 1 mu m, and the precision of the relative inkjet printing (10 mu m) is improved by at least one order of magnitude;
(4) The laser printed metal structure does not require any form of sintering operation;
(5) The laser printed semiconductor structure and the metal structure form very good contact, have excellent conductive performance, and provide a simple solution for customized printing of high-precision functional microelectronic devices.
It is to be understood that the above-described embodiments of the present invention are merely illustrative of or explanation of the principles of the present invention and are in no way limiting of the invention. Accordingly, any modification, equivalent replacement, improvement, etc. made without departing from the spirit and scope of the present invention should be included in the scope of the present invention. Furthermore, the appended claims are intended to cover all such changes and modifications that fall within the scope and boundary of the appended claims, or equivalents of such scope and boundary.
Claims (10)
1. The laser additive manufacturing system of the functional microelectronic device based on the continuous laser is characterized by comprising a 532nm continuous wave laser, an acousto-optic modulator, a lens, a galvanometer, a reflector, an objective lens and a processing platform which is arranged at the bottom of the objective lens and is used for placing a sample to be processed, wherein the acousto-optic modulator, the lens, the galvanometer, the reflector and the objective lens are sequentially arranged along a laser beam path;
the acousto-optic modulator is connected with the radio frequency driver, the radio frequency driver is powered by an independent power supply, analog signals and digital signals are provided by the signal source to regulate and control the switching and diffraction efficiency in real time, and the laser power is regulated and controlled by the acousto-optic modulator and the radio frequency driving module;
the lens is used for collimation, focusing and beam expansion of laser beams;
the vibrating mirror is used for controlling deflection of the laser beam;
the mirrors are used for vertically incidence of the laser beams emitted after the oscillating mirror is adjusted into the objective lens, the number of the mirrors is two, and the two mirrors are arranged in a mirror symmetry mode;
the objective lens is used for focusing the laser beam emitted by the 532nm continuous wave laser on the sample to be processed so as to perform laser scanning printing;
the processing platform comprises a two-dimensional automatic object stage capable of moving on a horizontal plane and a heavy-load XYZ three-dimensional nanometer positioning table arranged above the two-dimensional automatic object stage, and a sample to be processed is suitable for being horizontally placed on the heavy-load XYZ three-dimensional nanometer positioning table;
the digital-to-analog converter is connected with the computer, the acousto-optic modulator, the galvanometer and the processing platform are respectively connected with the digital-to-analog converter through signals, and the processing platform is controlled to move according to a preset processing path through control of a software interface in the computer so as to realize movement of a laser focus on the sample to be processed.
2. A method of laser additive manufacturing of a functional microelectronic device based on continuous laser, characterized in that the manufacturing method is based on the manufacturing system of claim 1, comprising the steps of:
processing a metal micro-nano structure: dropping metal ink on a cover glass fixed on the light emitting side of an objective lens, horizontally placing the cover glass on a processing platform, adopting laser power of 0.75-3.35 mW at the entrance pupil of the objective lens, controlling the processing speed to be 10-100 mu m/s, focusing laser in the metal ink through the objective lens, controlling the processing platform to move according to a preset processing path in the printing process so as to control the laser focus to move relative to the metal ink on the cover glass, and finishing the processing of the metal micro-nano structure, wherein the metal micro-nano structure is a metal wire;
printing of a semiconductor: and (3) dripping the prepared semiconductor ink on the surface of the metal wire, wherein the laser power is 6-20 mW, the processing speed is 10-100 mu m/s, the laser focus is positioned right below the metal wire, and the reaction of the semiconductor ink is promoted by virtue of local heat generated by single photon absorption in the metal, so that the laser printing of the semiconductor is completed.
3. The method of manufacturing according to claim 2, further comprising the step of: and (3) silanizing the cover glass: the glass cover slip was first treated with oxygen plasma for 10 minutes and then immersed in a mixed solution of toluene and (3-aminopropyl) triethoxysilane at an ambient temperature for 60 minutes, wherein the volume ratio of (3-aminopropyl) triethoxysilane to toluene was 0.2%.
4. The method of manufacturing according to claim 2, further comprising the steps of, after completion of the processing of the metal micro-nano structure: cleaning and drying the sample in a pure water solution;
after the printing step of the semiconductor is completed, the method further comprises the following steps: the sample is washed in a pure aqueous solution, then washed in an ethanol solution and dried.
5. The method according to claim 2, wherein in the processing step of the metal micro-nano structure, when the processing speed is 10 μm/s, the laser power is in the range of 0.4-1.4 mW, and the laser power is maintained between 0.75-1.05 mW, so that the processing effect is optimal;
when the machining speed is 25 mu m/s, the effective power interval is 0.8-2.25 mW, and the optimal power interval is 1.45-1.65 mW;
when the machining speed is 50 mu m/s, the effective power interval is 1.5-2.50 mW, and the optimal power interval is 2.10-2.50 mW;
when the machining speed is 100 mu m/s, the effective power interval is 2.0-3.35 mW, and the optimal power interval is 3.15-3.35 mW.
6. The manufacturing method according to claim 2, wherein the metal ink is a platinum ink or a silver ink, the platinum ink is prepared by mixing ferric ammonium oxalate trihydrate and ammonium tetrachloroplatinate according to a volume ratio of 1:1, and the silver ink is prepared by mixing and stirring 83 mM silver nitrate, 62 mM trisodium citrate and 14M ammonia water.
7. The method according to claim 2, wherein the semiconductor ink is a semiconductor zinc oxide ink whose main component is zinc nitrate hexahydrate;
the pH of the semiconductor ink is controlled to be 10.0 by ammonia water.
8. The method of manufacturing according to claim 2, wherein in the step of printing the semiconductor, the size of the printed semiconductor structure becomes larger as the laser power increases, and in the case where the laser power is unchanged, the size of the printed semiconductor structure becomes larger as the spot exposure time increases.
9. Use of the manufacturing system of claim 1 or the manufacturing method of any of claims 2-8 for manufacturing high precision micro-nano-electronic devices.
10. A functional microelectronic device manufactured using the manufacturing system of claim 1 or the manufacturing method of any of claims 2-8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311572924.4A CN117464183A (en) | 2023-11-23 | 2023-11-23 | Laser additive manufacturing method and system for functional microelectronic device based on continuous laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311572924.4A CN117464183A (en) | 2023-11-23 | 2023-11-23 | Laser additive manufacturing method and system for functional microelectronic device based on continuous laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117464183A true CN117464183A (en) | 2024-01-30 |
Family
ID=89629048
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311572924.4A Pending CN117464183A (en) | 2023-11-23 | 2023-11-23 | Laser additive manufacturing method and system for functional microelectronic device based on continuous laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117464183A (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20100080120A (en) * | 2008-12-31 | 2010-07-08 | 한국생산기술연구원 | Sintering method of printed circuit by laser writing |
| CN102285635A (en) * | 2011-07-28 | 2011-12-21 | 中国科学院理化技术研究所 | System and method for making metal micro-nano structure by using laser |
| US20130183833A1 (en) * | 2010-09-21 | 2013-07-18 | Technical Institute of Physics and Chemistry of the Chinese Academy of Sciences | Laser micro/nano processing system and method |
| US20160353578A1 (en) * | 2013-11-26 | 2016-12-01 | Jun Yang | Printing Method for Fabrication of Printed Electronics |
| CN107096997A (en) * | 2017-05-10 | 2017-08-29 | 华中科技大学 | A kind of three-dimensional microstructures based on continuous laser inscribe system and method |
| CN109848565A (en) * | 2019-04-02 | 2019-06-07 | 西安交通大学 | Femtosecond laser nanoprocessing method and system based on plasmon nanostructure auxiliary |
| CN114734138A (en) * | 2022-04-24 | 2022-07-12 | 中国科学院重庆绿色智能技术研究院 | Method for enhancing laser energy absorption efficiency of spatial additive manufacturing wire |
| CN115213565A (en) * | 2021-04-16 | 2022-10-21 | 大族激光科技产业集团股份有限公司 | Laser marking device and method |
-
2023
- 2023-11-23 CN CN202311572924.4A patent/CN117464183A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20100080120A (en) * | 2008-12-31 | 2010-07-08 | 한국생산기술연구원 | Sintering method of printed circuit by laser writing |
| US20130183833A1 (en) * | 2010-09-21 | 2013-07-18 | Technical Institute of Physics and Chemistry of the Chinese Academy of Sciences | Laser micro/nano processing system and method |
| CN102285635A (en) * | 2011-07-28 | 2011-12-21 | 中国科学院理化技术研究所 | System and method for making metal micro-nano structure by using laser |
| US20160353578A1 (en) * | 2013-11-26 | 2016-12-01 | Jun Yang | Printing Method for Fabrication of Printed Electronics |
| CN107096997A (en) * | 2017-05-10 | 2017-08-29 | 华中科技大学 | A kind of three-dimensional microstructures based on continuous laser inscribe system and method |
| CN109848565A (en) * | 2019-04-02 | 2019-06-07 | 西安交通大学 | Femtosecond laser nanoprocessing method and system based on plasmon nanostructure auxiliary |
| CN115213565A (en) * | 2021-04-16 | 2022-10-21 | 大族激光科技产业集团股份有限公司 | Laser marking device and method |
| CN114734138A (en) * | 2022-04-24 | 2022-07-12 | 中国科学院重庆绿色智能技术研究院 | Method for enhancing laser energy absorption efficiency of spatial additive manufacturing wire |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10193004B2 (en) | LIFT printing of conductive traces onto a semiconductor substrate | |
| CN102925938B (en) | System for treating laser coating | |
| US4894115A (en) | Laser beam scanning method for forming via holes in polymer materials | |
| JP5146948B2 (en) | Metal surface processing method | |
| CN110139727B (en) | Method and system for extending the lifetime of optics in a laser processing apparatus | |
| CN109581674B (en) | Solder paste laser-induced forward transfer equipment and method | |
| CN102439728A (en) | Method for forming structures in a solar cell | |
| CN108604575B (en) | Laser seed crystal for conductive electroplating | |
| CN104105353B (en) | A kind of manufacture method of high-precision ceramic circuit board | |
| CN109270798B (en) | Method for directly writing antioxidant copper microstructure by femtosecond laser and copper ion ink | |
| JP2009016724A (en) | Wiring forming method and wiring forming device | |
| JP2019512397A (en) | Image plane placement in laser processing systems | |
| JP2009004669A (en) | Method for manufacturing metal wiring substrate and metal wiring substrate formed by using it | |
| CN117464183A (en) | Laser additive manufacturing method and system for functional microelectronic device based on continuous laser | |
| CN106467965A (en) | A kind of preparation method of ceramic circuit board surface fine metal pattern | |
| CN1753755A (en) | Device and method for processing electric circuit substrates by laser | |
| KR101808741B1 (en) | Method for forming conductive layer patterns by inkjet-printing | |
| CN112517922B (en) | Method for manufacturing metal microstructure by high-repetition-frequency ultrafast laser high-efficiency direct writing | |
| CN1582095A (en) | Mask-free ceramic base board interconnecting lead manufacturing technique | |
| CN114918550A (en) | High-speed multistation laser marking device based on polar coordinates | |
| CN113604857B (en) | Ultrafast laser strengthening and in-situ online monitoring device for nano electroplating | |
| CN108326434A (en) | A method of preparing RFID antenna using laser | |
| JPS62168688A (en) | Laser beam machining device | |
| CN214921443U (en) | Laser processing device for multi-beam fast etching large-breadth conductive film | |
| JP2010145562A (en) | Pattern formation method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |