CN117459000A - Bias circuit for low noise amplifier and radio frequency low noise amplifier - Google Patents
Bias circuit for low noise amplifier and radio frequency low noise amplifier Download PDFInfo
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- CN117459000A CN117459000A CN202311619918.XA CN202311619918A CN117459000A CN 117459000 A CN117459000 A CN 117459000A CN 202311619918 A CN202311619918 A CN 202311619918A CN 117459000 A CN117459000 A CN 117459000A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
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Abstract
The invention discloses a bias circuit for a low noise amplifier and a radio frequency low noise amplifier. The bias circuit comprises a bias circuit control module and a bias current supply module; the bias circuit control module is connected with the common gate circuit of the low noise amplifier and is used for controlling the bias circuit to be opened or closed and inhibiting the voltage leakage and the current leakage of the common gate circuit when the bias circuit is closed; the bias current providing module is connected to the common source circuit of the low noise amplifier and is configured to provide a current bias to stabilize the current of the low noise amplifier in response to the current offset of the low noise amplifier. The bias circuit provided by the invention can realize the aim of stabilizing LNA current in a high-low temperature environment by providing current bias when the current offset occurs in the common-source circuit in the high-low temperature environment and inhibiting voltage leakage and/or current leakage of the common-gate circuit when the bias circuit is closed.
Description
Technical Field
The present invention relates to the field of low noise amplifiers, and in particular, to a bias circuit for a low noise amplifier and a radio frequency low noise amplifier.
Background
The main function of the radio frequency low noise amplifier (LNA, low noise amplifier) is to amplify the weak signal received by the antenna from the air, amplify the received radio frequency signal under the condition of lowest noise interference, and output the amplified signal to the post-stage or system transceiver chip so as to demodulate the information data required by the system. Thus, the noise figure and the radio frequency scattering parameter are two important determinants of the performance of a low noise amplifier in a system. The current in the circuit of the low-noise amplifier chip in the high-low temperature environment is influenced by physical factors of devices and is offset relative to the normal temperature value, so that the noise coefficient and the radio frequency scattering parameter of the low-noise amplifier are influenced, even the overcurrent and overvoltage breakdown of the components and the thorough damage of products are caused, and the stability of the current in the high-low temperature environment is ensured to be very important for the radio frequency low-noise amplifier.
With the improvement of the integration level of the radio frequency low noise amplifier in the current communication industry, the requirements on the working frequency, the acting distance, the coverage range and the radiation power of the radio frequency low noise amplifier are also increasingly increased, the requirements on the noise coefficient and the scattering parameter characteristic of a product are higher and higher at normal temperature under the conditions of high integration level and high frequency, and the performance and the reliability requirements under the high and low temperature environment are also more strict, so that the traditional low noise amplifier design cannot meet the existing severe requirements. In order to solve the problem, it is necessary to provide a product of a radio frequency low noise amplifier with better performance and better reliability in high and low temperature environments, so as to ensure the radio frequency receiving performance and quality of the system in the high and low temperature environments.
Disclosure of Invention
The invention aims to overcome the defect that in the prior art, the current in a circuit of a low-noise amplifier chip in a high-low temperature environment is influenced by physical factors of a device and is offset from a normal temperature value, so that the noise coefficient and the radio frequency scattering parameter influencing low-noise amplification are caused.
The invention solves the technical problems by the following technical scheme:
the invention provides a bias circuit for a low noise amplifier, which comprises a bias circuit control module and a bias current providing module; the bias current supply module is connected with a power supply through the bias circuit control module;
the bias circuit control module is connected with the common gate circuit of the low noise amplifier and is used for controlling the bias circuit to be opened or closed and inhibiting voltage leakage and/or current leakage of the common gate circuit when the bias circuit is closed;
the bias current providing module is connected to the common source circuit of the low noise amplifier and is configured to provide a current bias to stabilize the current of the low noise amplifier in response to the current offset of the low noise amplifier.
Preferably, the bias current providing module provides a current bias to the common source circuit according to a reference current and the current offset by forming a current mirror.
Preferably, the bias current providing module includes a first field effect transistor; the first field effect transistor is connected with a power supply through the bias circuit control module;
the first field effect transistor is connected in parallel to a gate of the common source circuit.
Preferably, the bias circuit control module comprises a switch unit and a leakage suppression unit; one end of the switch unit is connected with a power supply, and the other end of the switch unit is connected with one end of the leakage suppression unit and the bias current supply module; the other end of the leakage suppression unit is connected with the control end of the common gate circuit;
the switch unit is used for controlling the bias circuit to be opened or closed;
the leakage suppression unit is used for suppressing voltage leakage and/or current leakage of the common gate circuit by pulling down the voltage of the control end of the common gate circuit when the bias circuit is closed.
Preferably, the leakage suppression unit includes a second field effect transistor, and the switching unit includes a third field effect transistor;
the drain electrode of the third field effect transistor is connected with a power supply, the grid electrode of the third field effect transistor is connected with control voltage required by the bias circuit, and the source electrode of the third field effect transistor is respectively connected with the grid electrode of the common source circuit and the drain electrode of the second field effect transistor;
the grid electrode of the second field effect transistor is grounded through a first resistor and is connected with the control voltage through a second resistor, the source electrode of the second field effect transistor is grounded, and the drain electrode of the second field effect transistor is also connected with the grid electrode of the common gate circuit.
Preferably, the bias circuit further comprises a first voltage stabilizing module, and the first voltage stabilizing module is connected to the common source circuit in parallel;
the first voltage stabilizing module is used for providing a stabilized voltage reference to stabilize the voltage of the common source circuit; and/or the number of the groups of groups,
the bias circuit further comprises a second voltage stabilizing module which is connected to the common gate circuit in parallel;
the second voltage stabilizing module is used for providing a stabilized voltage reference to stabilize the voltage of the common gate circuit.
Preferably, the first voltage stabilizing module comprises a first voltage stabilizing device group; the first voltage stabilizing devices are connected in series and then connected to the grid electrode of the common source circuit in parallel; and/or the number of the groups of groups,
the second voltage stabilizing module comprises a second voltage stabilizing device group; the second voltage stabilizing devices are connected in series and then connected to the grid electrode of the common grid circuit in parallel.
Preferably, the bias circuit further comprises a first decoupling module connected in parallel to the common source circuit;
the first decoupling module is used for performing radio frequency decoupling on the bias circuit and the common source circuit so as to improve the stability of the common source circuit; and/or the number of the groups of groups,
the bias circuit further includes a second decoupling module connected in parallel to the common-gate circuit;
the second decoupling module is used for performing radio frequency decoupling on the bias circuit and the common gate circuit so as to improve the stability of the common gate circuit.
Preferably, the first decoupling module includes at least one first capacitor, one end of the first capacitor is connected to the gate of the common source circuit, and the other end of the first capacitor is grounded; and/or the number of the groups of groups,
the second decoupling module comprises at least one second capacitor, one end of the second capacitor is connected with the grid electrode of the common-grid circuit, and the other end of the second capacitor is grounded.
The invention also provides a radio frequency low noise amplifier comprising a bias circuit for a low noise amplifier as described above.
The invention has the positive progress effects that:
according to the bias circuit for the low-noise amplifier, provided by the invention, when the common source circuit generates current offset in the high-low temperature environment of the LNA, the bias current supply module supplies current bias to stabilize the current of the low-noise amplifier, and the bias circuit control module suppresses voltage leakage and/or current leakage of the common gate circuit when the bias circuit is closed, so that the aim of stabilizing the LNA working current in the high-low temperature environment is fulfilled, and the performance and quality of an LNA product in the high-low temperature are ensured.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present specification, the drawings that are required to be used in the description of the embodiments will be briefly described below. It is apparent that the drawings in the following description are only some examples or embodiments of the present specification, and it is possible for those of ordinary skill in the art to apply the present specification to other similar situations according to the drawings without inventive effort. Unless otherwise apparent from the context of the language or otherwise specified, like reference numerals in the figures refer to like structures or operations.
Fig. 1 is a first structural diagram of a bias circuit for a low noise amplifier in embodiment 1 of the present invention.
Fig. 2 is a second structural diagram of a bias circuit for a low noise amplifier in embodiment 1 of the present invention.
Fig. 3 is a third structural diagram of the bias circuit for the low noise amplifier in embodiment 1 of the present invention.
Fig. 4 is a fourth structural diagram of a bias circuit for a low noise amplifier in embodiment 1 of the present invention.
Fig. 5 is a fifth structural diagram of a bias circuit for a low noise amplifier in embodiment 1 of the present invention.
Fig. 6 is a sixth structural diagram of the bias circuit for the low noise amplifier in embodiment 1 of the present invention.
Fig. 7 is a seventh structural diagram of a bias circuit for a low noise amplifier in embodiment 1 of the present invention.
Fig. 8 is a schematic diagram of an eighth configuration of the bias circuit for the low noise amplifier in embodiment 1 of the present invention.
Fig. 9 is a ninth structural diagram of a bias circuit for a low noise amplifier in embodiment 1 of the present invention.
Detailed Description
The invention is further illustrated by means of the following examples, which are not intended to limit the scope of the invention.
Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment may be included in at least one embodiment of the present application. The appearances of such phrases in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. Those of skill in the art will explicitly and implicitly appreciate that the embodiments described herein may be combined with other embodiments.
As used herein, the terms "a," "an," "the," and/or "the" are not specific to the singular, but may include the plural, unless the context clearly indicates otherwise. In general, the terms "comprises" and "comprising" merely indicate that the steps and elements are explicitly identified, and they do not constitute an exclusive list, as other steps or elements may be included in a method or apparatus.
The definitions of the first and second, etc. herein are provided herein for the purpose of illustration and distinction of descriptive objects only, without order division, and without implying any particular limitation on the number of devices herein, and without any limitation herein. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the present disclosure.
Example 1
Please refer to fig. 1, which is a schematic diagram of a first structure of a bias circuit for a low noise amplifier in the present embodiment. Specifically, as shown in fig. 1, the bias circuit includes a bias circuit control module 1 and a bias current supply module 2; the bias current supply module 2 is connected with a power supply through the bias circuit control module 1;
the bias circuit control module 1 is connected with the common gate circuit 3 of the low noise amplifier, and the bias circuit control module 1 is used for controlling the bias circuit to be turned on or off and inhibiting the voltage leakage and/or the current leakage of the common gate circuit 3 when the bias circuit is turned off;
the bias current providing module 2 is connected to the common source circuit 4 of the low noise amplifier, the bias current providing module 2 being adapted to provide a current bias to stabilize the current of the low noise amplifier in response to the current offset of the low noise amplifier.
Specifically, the low noise amplifier of this embodiment takes a classical Cascode LNA (low noise amplifier) structure as an example, and an input signal is processed by the input matching circuit 5, amplified by two poles of the common source circuit 4 and the common gate circuit 3, and then converted into an output signal after being processed by the output matching circuit 6. Currents in the common source circuit and the common gate circuit of the LNA are relatively deviated from normal temperature values under the influence of physical factors of devices in a high-low temperature environment, so that noise coefficients and radio frequency scattering parameters of the LNA are influenced. According to the bias circuit for the low-noise amplifier, provided by the embodiment, when the common-source circuit generates current offset under the high-low temperature environment of the LNA, the bias current providing module provides current bias to stabilize the current of the low-noise amplifier, and the bias circuit control module suppresses voltage leakage and/or current leakage of the common-gate circuit when the bias circuit is closed, so that the aim of stabilizing the LNA working current under the high-low temperature environment (for example, -40 ℃ to +85 ℃) is fulfilled, and the performance and quality of LNA products under the high-low temperature are ensured.
Please refer to fig. 2, which is a second schematic diagram of a bias circuit for a low noise amplifier in the present embodiment. Specifically, as shown in fig. 2, in an alternative embodiment, the bias current providing module 2 provides a current bias to the common source circuit by forming a current mirror according to a reference current and a current offset.
In the present embodiment, the bias current supply module 2 includes a first field effect transistor M3; the first field effect transistor M3 is connected with a power supply through the bias circuit control module 1; the first field effect transistor M3 is connected in parallel to the gate of the common source circuit.
In another alternative embodiment, the bias circuit control module 1 includes a switching unit 11 and a leakage suppression unit 12; one end of the switch unit 11 is connected with a power supply, and the other end of the switch unit 11 is connected with one end of the leakage suppression unit 12 and the bias current supply module 2; the other end of the leakage suppression unit 12 is connected with the control end of the common gate circuit 3; the switch unit 11 is used for controlling the opening or closing of the bias circuit; the leakage suppressing unit 12 is configured to suppress voltage leakage and/or current leakage of the common gate circuit by pulling down the voltage of the control terminal of the common gate circuit 3 when the bias circuit is turned off.
Specifically, the leakage suppression unit 12 includes a second field effect transistor M4, and the switching unit 11 includes a third field effect transistor M5;
the drain electrode of the third field effect transistor M5 is connected with a power supply, the grid electrode is connected with a control voltage required by the bias circuit, and the source electrode is respectively connected with the grid electrode of the common source circuit 4 and the drain electrode of the second field effect transistor M4;
the grid electrode of the second field effect transistor M4 is grounded through a first resistor R5 and is connected with a control voltage through a second resistor R6, the source electrode of the second field effect transistor M4 is grounded, and the drain electrode of the second field effect transistor M4 is also connected with the grid electrode of the common gate circuit 3.
In addition, the bias circuit may further include a first voltage stabilizing module 7, where the first voltage stabilizing module 7 is connected in parallel to the common source circuit 4; the first voltage stabilizing module 7 is used for providing a stabilizing voltage reference to stabilize the voltage of the common source circuit 4;
the bias circuit may further include a second voltage stabilizing module 8, the second voltage stabilizing module 8 being connected in parallel to the common gate circuit 3; the second voltage stabilizing module 8 is used for providing a stabilizing voltage reference to stabilize the voltage of the common gate circuit 3.
Specifically, the first voltage stabilizing module 7 includes a first voltage stabilizing device group; the first voltage stabilizing devices are connected in series and then connected to the grid electrode of the common source circuit 4 in parallel; the second voltage stabilizing module 8 comprises a second voltage stabilizing device group; the second voltage stabilizing devices are connected in series with each other and then connected in parallel to the gate of the common gate circuit 3.
In an alternative embodiment, the bias circuit may further comprise a first decoupling module 9, the first decoupling module 9 being connected in parallel to the common source circuit 4; the first decoupling module 9 is used for performing radio frequency decoupling on the bias circuit and the common source circuit 4 so as to improve the stability of the common source circuit;
the bias circuit further comprises a second decoupling module 10, the second decoupling module 10 being connected in parallel to the common-gate circuit 3; the second decoupling module is used for radio frequency decoupling of the bias circuit and the common gate circuit 3 to improve the stability of the common gate circuit.
In this embodiment, the first decoupling module 9 includes at least one first capacitor C1, where one end of the first capacitor C1 is connected to the gate of the common source circuit 4, and the other end is grounded; the second decoupling module 10 includes at least one second capacitor C2, where one end of the second capacitor C2 is connected to the gate of the common-gate circuit, and the other end is grounded.
The biasing circuit is further described below in conjunction with fig. 2. The radio frequency high frequency signal is input into the matching circuit 5, then enters the G pole (grid electrode) of the field effect transistor M1 of the common source circuit 4, the S pole (source electrode) of the field effect transistor M1 is grounded after being connected with the inductor L2, the D pole (drain electrode) of the field effect transistor M1 is connected with the S pole of the field effect transistor M2 of the common gate circuit 3, one side of the D pole of the field effect transistor M2 is connected with the inductor L1 and then is connected with the power supply voltage VCC, and the other side is connected with the output matching circuit 6 to enable signals to be output, and the grid electrodes of the field effect transistor M1 and the field effect transistor M2 are connected with the bias circuit. After the grid electrode of the field effect transistor M1 passes through the bias resistor R1, the first capacitor C1 of the first decoupling module 9 is connected to the ground in parallel, then the first field effect transistor M3 of the bias current providing module 2 connected in series by the resistor R2 is connected in parallel, after passing through a series resistor R3, the second field effect transistor M4 is connected in parallel, after passing through a group of diodes D1 to D1n (n is more than or equal to 1) of the first voltage stabilizing module 7, then the signal is connected to the S electrode of the third field effect transistor M5 of the switching unit 11 through the resistor R4, the D electrode of the third field effect transistor M5 is connected with the power supply voltage VCC, the G electrode of the third field effect transistor M5 is connected with the control voltage required by the circuit, one side signal of the S electrode of the third field effect transistor M5 is led to the G electrode of the field effect transistor M1, the other side signal is connected with the second field effect transistor M4 of the leakage suppressing unit 12 in parallel, the G electrode of the second field effect transistor M4 is connected with the resistor R5 through a group of diodes D1n (n is more than or equal to 1), the other side signal is connected with the S electrode of the resistor R5 through the series resistor R4, after passing through the second field effect transistor M4 is connected to the second field effect transistor M2, and the second field effect transistor M2 is connected to the series resistor R2 is connected to the control voltage R2, and the G electrode of the second field effect transistor is connected to the second field effect transistor is connected in parallel to the series 2, the G electrode is connected with the control voltage is connected with the G electrode of the second field effect transistor 2 is connected to the control transistor M2.
It should be noted that, the field effect transistors M1, M2, M3 and M4 in the present embodiment may be selected as E-mode (enhancement mode) devices, the field effect transistor M5 may be a D-mode (depletion mode) device, and the field effect transistors M3 and M4 may implement their functions only by using minimum area devices. The present embodiment is not limited to the type of the transistors used in the bias circuit, and the bias circuit may use CMOS (Complementary Metal Oxide Semiconductor ) transistors or other low noise devices, or may use different types of transistors in combination, please refer to fig. 3, which is a schematic diagram of a third structure of the bias circuit for a low noise amplifier in the present embodiment. Referring to fig. 4, a fourth schematic diagram of the bias circuit for the low noise amplifier in the present embodiment is shown; the diode used in the bias circuit in this embodiment may be replaced by other devices with the same voltage stabilizing characteristics, for example, a PHEMT E-mode (pseudo-high electron mobility enhancement) device G and DS are connected in parallel to form a voltage stabilizing device, please refer to fig. 5, which is a fifth schematic diagram of the bias circuit for the low noise amplifier in this embodiment, or a triode is connected in parallel to form a voltage stabilizing device with an emitter, please refer to fig. 6, which is a sixth schematic diagram of the bias circuit for the low noise amplifier in this embodiment; other circuits in the circuit of this embodiment than the bias circuit (within the dashed box) are incorporated by reference but this embodiment is not limiting.
In addition, please refer to fig. 7, which is a schematic diagram of a seventh structure of the bias circuit for the low noise amplifier in the present embodiment, the second capacitor C2 of the second decoupling module may also select the series resistor R10 to go to ground, and the first capacitor C1 of the first decoupling module may also select the series resistor R11 to go to ground, so as to further adjust the radio frequency stability of the LNA. Referring to fig. 8, which is a schematic diagram of an eighth structure of the bias circuit for the low noise amplifier in the present embodiment, the series resistor 9 may be replaced by a series inductor L4, and the series resistor 1 may be replaced by a series inductor L3. Referring to fig. 9, which is a ninth structural diagram of a bias circuit for a low noise amplifier in this embodiment, a resistor R4 in a first voltage stabilizing module is matched with diodes D1 to D1n connected in series to realize the effect of stabilizing the voltage of the gate of the field effect transistor M1, a resistor R8 in a second voltage stabilizing module is matched with diodes D2 to D2n connected in series to realize the effect of stabilizing the voltage of the gate of the field effect transistor M2, if the voltage of the control circuit is relatively stable, the bias circuit may not be configured with the first voltage stabilizing module and/or the second voltage stabilizing module, a resistor R8 may be added to the second decoupling module, and the resistor R8 is connected in parallel to the ground to regulate the required voltage for the gate of the field effect transistor M2.
According to the bias circuit for the low-noise amplifier, provided by the embodiment, when the common-source circuit generates current offset in the high-low temperature environment of the LNA, the bias current providing module provides current bias to stabilize the current of the low-noise amplifier, and the bias circuit control module suppresses voltage leakage and/or current leakage of the common-gate circuit when the bias circuit is closed, so that the aim of stabilizing the working current of the LNA in the high-low temperature environment is fulfilled; the voltage stabilizing module and the decoupling module are respectively configured for the common source circuit and the common gate circuit, so that stable voltage reference at high and low temperatures is provided for the LNA, the radio frequency stability of the LNA is enhanced, the radio frequency scattering parameter and the noise coefficient of the LNA are not negatively influenced, and the performance and the quality of the LNA product at the high and low temperatures are ensured.
Example 2
The present embodiment provides a radio frequency low noise amplifier including the bias circuit for a low noise amplifier in embodiment 1.
The bias circuit for the radio frequency low noise amplifier provided by the embodiment realizes the aim of stabilizing the LNA working current in a high-low temperature environment by utilizing the bias circuit for the low noise amplifier, and ensures the performance and quality of LNA products in high-low temperature.
While specific embodiments of the invention have been described above, it will be appreciated by those skilled in the art that this is by way of example only, and the scope of the invention is defined by the appended claims. Various changes and modifications to these embodiments may be made by those skilled in the art without departing from the principles and spirit of the invention, but such changes and modifications fall within the scope of the invention.
Claims (10)
1. A bias circuit for a low noise amplifier, the bias circuit comprising a bias circuit control module and a bias current providing module; the bias current supply module is connected with a power supply through the bias circuit control module;
the bias circuit control module is connected with the common gate circuit of the low noise amplifier and is used for controlling the bias circuit to be opened or closed and inhibiting voltage leakage and/or current leakage of the common gate circuit when the bias circuit is closed;
the bias current providing module is connected to the common source circuit of the low noise amplifier and is configured to provide a current bias to stabilize the current of the low noise amplifier in response to the current offset of the low noise amplifier.
2. The bias circuit of claim 1 wherein said bias current providing module provides a current bias to said common source circuit based on a reference current and said current offset by forming a current mirror.
3. The bias circuit of claim 1 wherein said bias current providing means comprises a first field effect transistor; the first field effect transistor is connected with a power supply through the bias circuit control module;
the first field effect transistor is connected in parallel to a gate of the common source circuit.
4. The bias circuit of claim 1, wherein the bias circuit control module comprises a switching unit and a leakage suppression unit; one end of the switch unit is connected with a power supply, and the other end of the switch unit is connected with one end of the leakage suppression unit and the bias current supply module; the other end of the leakage suppression unit is connected with the control end of the common gate circuit;
the switch unit is used for controlling the bias circuit to be opened or closed;
the leakage suppression unit is used for suppressing voltage leakage and/or current leakage of the common gate circuit by pulling down the voltage of the control end of the common gate circuit when the bias circuit is closed.
5. The bias circuit of claim 4, wherein said leakage suppression unit includes a second field effect transistor and said switching unit includes a third field effect transistor;
the drain electrode of the third field effect transistor is connected with a power supply, the grid electrode of the third field effect transistor is connected with control voltage required by the bias circuit, and the source electrode of the third field effect transistor is respectively connected with the grid electrode of the common source circuit and the drain electrode of the second field effect transistor;
the grid electrode of the second field effect transistor is grounded through a first resistor and is connected with the control voltage through a second resistor, the source electrode of the second field effect transistor is grounded, and the drain electrode of the second field effect transistor is also connected with the grid electrode of the common gate circuit.
6. The bias circuit of claim 1 further comprising a first voltage regulator module connected in parallel to the common source circuit;
the first voltage stabilizing module is used for providing a stabilized voltage reference to stabilize the voltage of the common source circuit; and/or the number of the groups of groups,
the bias circuit further comprises a second voltage stabilizing module which is connected to the common gate circuit in parallel;
the second voltage stabilizing module is used for providing a stabilized voltage reference to stabilize the voltage of the common gate circuit.
7. The bias circuit of claim 6 wherein said first voltage regulator module includes a first set of voltage regulator devices; the first voltage stabilizing devices are connected in series and then connected to the grid electrode of the common source circuit in parallel; and/or the number of the groups of groups,
the second voltage stabilizing module comprises a second voltage stabilizing device group; the second voltage stabilizing devices are connected in series and then connected to the grid electrode of the common grid circuit in parallel.
8. The bias circuit of claim 1, wherein the bias circuit further comprises a first decoupling module connected in parallel to the common source circuit;
the first decoupling module is used for performing radio frequency decoupling on the bias circuit and the common source circuit so as to improve the stability of the common source circuit; and/or the number of the groups of groups,
the bias circuit further includes a second decoupling module connected in parallel to the common-gate circuit;
the second decoupling module is used for performing radio frequency decoupling on the bias circuit and the common gate circuit so as to improve the stability of the common gate circuit.
9. The bias circuit of claim 8, wherein the first decoupling module comprises at least one first capacitance having one end connected to a gate of the common source circuit and another end grounded; and/or the number of the groups of groups,
the second decoupling module comprises at least one second capacitor, one end of the second capacitor is connected with the grid electrode of the common-grid circuit, and the other end of the second capacitor is grounded.
10. A radio frequency low noise amplifier comprising a biasing circuit for a low noise amplifier according to any of claims 1-9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311619918.XA CN117459000A (en) | 2023-11-29 | 2023-11-29 | Bias circuit for low noise amplifier and radio frequency low noise amplifier |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311619918.XA CN117459000A (en) | 2023-11-29 | 2023-11-29 | Bias circuit for low noise amplifier and radio frequency low noise amplifier |
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| Publication Number | Publication Date |
|---|---|
| CN117459000A true CN117459000A (en) | 2024-01-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311619918.XA Pending CN117459000A (en) | 2023-11-29 | 2023-11-29 | Bias circuit for low noise amplifier and radio frequency low noise amplifier |
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| CN (1) | CN117459000A (en) |
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- 2023-11-29 CN CN202311619918.XA patent/CN117459000A/en active Pending
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