CN117458266A - Intracavity contact high speed photon-photon resonant surface emitting laser - Google Patents

Intracavity contact high speed photon-photon resonant surface emitting laser Download PDF

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Publication number
CN117458266A
CN117458266A CN202311394356.3A CN202311394356A CN117458266A CN 117458266 A CN117458266 A CN 117458266A CN 202311394356 A CN202311394356 A CN 202311394356A CN 117458266 A CN117458266 A CN 117458266A
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China
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layer
type
cavity
photon
type dbr
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CN202311394356.3A
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Chinese (zh)
Inventor
佟海霞
佟存柱
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Jiguang Semiconductor Technology Co ltd
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Jiguang Semiconductor Technology Co ltd
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Priority to CN202311394356.3A priority Critical patent/CN117458266A/en
Publication of CN117458266A publication Critical patent/CN117458266A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18363—Structure of the reflectors, e.g. hybrid mirrors comprising air layers

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The invention relates to the field of semiconductor lasers, and provides a high-speed photon-photon resonance surface emitting laser with intra-cavity contact, which comprises an N-type substrate, wherein an N-type contact layer, an N-type DBR layer, an active layer, a P-type contact layer and a P-type DBR layer are sequentially prepared on the N-type substrate, a current limiting layer is prepared between the P-type contact layer and the active layer and/or between the N-type contact layer and the active layer, the P-type DBR layer comprises a main cavity P-type DBR layer and at least one auxiliary cavity P-type DBR layer, main cavity P-type electrodes are respectively prepared on the P-type contact layer at positions corresponding to the main cavity P-type DBR layer and the auxiliary cavity P-type DBR layer, and N-type electrodes are respectively prepared on the N-type contact layer at positions corresponding to the main cavity P-type DBR layer and the auxiliary cavity P-type DBR layer. The invention adopts the intracavity contact structure, and the current does not pass through the P-type DBR layer, so that the parasitic resistance and capacitance of the device can be effectively reduced, and the current congestion effect and the auxiliary cavity loss are reduced, thereby improving the bandwidth.

Description

Intracavity contact high speed photon-photon resonant surface emitting laser
Technical Field
The invention relates to the technical field of semiconductor lasers, in particular to a cavity-contacting high-speed photon-photon resonance surface emitting laser.
Background
Surface emitting lasers, particularly Vertical Cavity Surface Emitting Lasers (VCSELs), have been recently proposed in 1977, and have been widely used in various fields such as optical communication, optical interconnection, sensing, optical storage, laser display, and laser radar, due to their advantages of circular symmetric light spot, low threshold current, easy two-dimensional integration, and in-plane detection. With the gradual rise of large data centers and supercomputers, the total network bandwidth in the large data centers exceeds 200T bps, the power consumption caused by mutual data transmission is greatly emphasized, and the adoption of VCSELs for optical interconnection between the data centers is regarded as an effective means for reducing the transmission power consumption.
However, as the flow demand of the data center increases, the rate requirement on the VCSEL is higher and higher, and the typical VCSEL structure is affected by factors such as device parasitics, thermal effects, etc., so that the space for further improving the bandwidth is limited, and therefore, the proposal of a new structure for improving the bandwidth of the VCSEL is particularly important. In order to maximize bandwidth, it is now common to reduce the size of the oxide pores. However, the oxidation hole is small, the thermal resistance of the VCSEL is large, and the reliability is poor. Photon-photon resonant structures typically have a main cavity and one or more secondary cavities, with modulation of the power applied to the main cavity to leak main cavity current into the secondary cavities, reducing secondary cavity losses, while light from the main cavity is reflected back from the secondary cavity sidewalls to resonate with the light from the main cavity, thereby increasing the bandwidth of the laser light output from the main cavity. The traditional photon-photon resonance structure is an external cavity contact structure, for an infrared laser, the upper reflector material is generally Al (x) Ga (1-x) As, and parasitic capacitance and resistance can be caused when current passes through the upper reflector, so that the bandwidth of the device is prevented from being increased. In addition, the intra-cavity contact structure is extremely easy to generate a current crowding effect, so that the temperature in the cavity is increased, the phenomenon can cause the resistance of the device to be increased, the current crowding effect is further increased, and a vicious circle is formed.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a cavity-contacting high-speed photon-photon resonance surface emitting laser, which avoids parasitic resistance generated by current passing through an upper reflecting mirror, can reduce current congestion effect and improves the bandwidth of the device.
In order to achieve the above purpose, the present invention adopts the following specific technical scheme:
the invention provides a cavity-contacting high-speed photon-photon resonance surface emitting laser, which comprises an N-type substrate, wherein an N-type contact layer, an N-type DBR layer, an active layer, a P-type contact layer and a P-type DBR layer are sequentially prepared on the N-type substrate, a current limiting layer is prepared between the P-type contact layer and the active layer and/or between the N-type contact layer and the active layer, the P-type DBR layer comprises a main cavity P-type DBR layer and at least one auxiliary cavity P-type DBR layer, a main cavity P-type electrode is prepared on the P-type contact layer at a position corresponding to the main cavity P-type DBR layer, and a main cavity N-type electrode is prepared on the N-type contact layer at a position corresponding to the main cavity P-type DBR layer.
Preferably, the main cavity P-type DBR layer, the active layer and the N-type DBR layer form a main resonant cavity, the auxiliary cavity P-type DBR layer, the active layer and the N-type DBR layer form an auxiliary resonant cavity, the main resonant cavity and the auxiliary resonant cavity are electrically isolated through ion implantation, and the horizontal projections of the main resonant cavity and the auxiliary resonant cavity are circular, elliptic or polygonal.
Preferably, a current hole which is not oxidized is formed in the current confinement layer at a position corresponding to the main resonator and the sub-resonator.
Preferably, the current aperture is circular, elliptical or polygonal.
Preferably, the active layer is a quantum dot structure, a quantum well structure, or a separation confinement heterojunction structure.
Preferably, the distance between the primary and secondary cavities, and the distance between the secondary cavities is 0-30 μm.
Preferably, the P-type DBR layer is made of SiO 2 /Si 3 N 4 The dielectric film and the N-type DBR layer adopt N-type doped AlGaAs alternating layers.
Preferably, a current buffer layer is prepared between the active layer and the current confinement layer.
Compared with the prior art, the high-speed photon-photon resonance surface emitting laser provided by the invention adopts the intracavity contact structure, and current does not pass through the P-type DBR layer, so that parasitic resistance and capacitance of the device can be effectively reduced, current leaks to the auxiliary cavity through the N-type DBR, and current congestion effect of the main cavity and loss of the auxiliary cavity are reduced. Thereby improving bandwidth.
Drawings
FIG. 1 is a block diagram of a high-speed photon-photon resonant surface emitting laser with intra-cavity contacts provided in accordance with an embodiment of the present invention;
FIG. 2 is a top view of the overall structure of a high-speed photon-photon resonant surface-emitting laser with intra-cavity contacts provided in accordance with an embodiment of the present invention;
FIG. 3 is a diagram of optical paths within a primary and secondary resonant cavity provided in accordance with an embodiment of the present invention;
fig. 4 is a diagram of laser resonance paths in a main resonator and a sub-resonator according to an embodiment of the present invention.
Wherein reference numerals include: an N-type substrate 1, an N-type contact layer 2, an N-type DBR layer 3, an active layer 4, a current buffer layer 5, a current confinement layer 6, a P-type contact layer 7, a main cavity P-type DBR layer 81, a sub-cavity P-type DBR layer 82, an ion implantation region 9, a main cavity P-type electrode 10, a main cavity N-type electrode 11, a main cavity 12, and a sub-cavity 13.
Detailed Description
Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In the following description, like modules are denoted by like reference numerals. In the case of the same reference numerals, their names and functions are also the same. Therefore, a detailed description thereof will not be repeated.
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be further described in detail with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not to be construed as limiting the invention.
As shown in fig. 1 to 4, the intracavity-contacted high-speed photon-photon resonant surface emitting laser provided by the embodiment of the invention comprises an N-type substrate 1, an N-type contact layer 2, an N-type DBR layer 3, an active layer 4, a current buffer layer 5, a current limiting layer 6, a P-type contact layer 7 and a P-type DBR layer which are sequentially stacked from bottom to top.
The current buffer layer 5 plays a role of current buffer when current is injected.
The active layer 4 is a quantum dot structure, a quantum well structure or a separation confinement heterojunction structure, for example, an InGaAs/GaAs quantum well material is used.
The P-type DBR layer adopts a bragg reflector structure or a dielectric film structure, for example, adopts a SiO2/Si3N4 dielectric film.
The N-type DBR layer 3 adopts an N-type doped AlGaAs alternating layer.
The P-type DBR layer includes a main cavity P-type DBR layer 81 and at least one sub-cavity P-type DBR layer 82, the main cavity P-type DBR layer 81, the active layer 4 and the N-type DBR layer 3 constitute a main resonant cavity 12, the sub-cavity P-type DBR layer 82, the active layer 4 and the N-type DBR layer 3 constitute a sub-resonant cavity 13, the main resonant cavity 12 and the sub-resonant cavity 13 share a lower reflector, and an upper reflector is not shared, and each resonant cavity (including the main resonant cavity 12 and the sub-resonant cavity 13) corresponds to an upper reflector.
The horizontal projections of the main resonant cavity 12 and the auxiliary resonant cavity 13 are all round, elliptic or polygonal.
The distance between the main resonant cavity and the auxiliary resonant cavity and the distance between the auxiliary resonant cavities are 0-30 mu m, and the coupling efficiency of light is infinitely close to 1 by adjusting the distance between the main resonant cavity 12 and the auxiliary resonant cavity 13.
In one embodiment of the present invention, the main cavity 12 and the auxiliary cavity 13 are in an octagonal structure, and each side of the main cavity 12 and the auxiliary cavity 13 is 3 μm.
Between the main resonant cavity 12 and the auxiliary resonant cavity 13 is an ion implantation area 9, and the electric isolation between the main resonant cavity 12 and the auxiliary resonant cavity 13 is realized by ion implantation into the ion implantation area 9.
The light reflected by the sub-resonant cavity 13 is laterally coupled to the light emitted from the main resonant cavity 12, and a photon-photon resonance effect is generated between the main resonant cavity 12 and the sub-resonant cavity 13, thereby increasing the bandwidth of the laser light output from the main resonant cavity 12.
Non-oxidized current holes are formed in the current confinement layer 6 at positions corresponding to the main resonator 12 and the sub-resonator 13, one resonator corresponds to each current hole, and the current holes may be circular, elliptical or polygonal. The current limiting layer 6 oxidizes the AlGaAs high aluminum layer in the epitaxial structure through a wet nitrogen oxidation process to generate aluminum oxide with high insulation and low refractive index characteristics, so that the current and light field are limited, and the unoxidized area of the middle part of the high aluminum layer is an oxidation hole.
A main cavity P-type electrode 10 is prepared on the P-type contact layer 7 at a position corresponding to the main resonant cavity 12, and a main cavity N-type electrode 11 is prepared on the N-type contact layer 2 at a position corresponding to the main resonant cavity 12.
Since the main cavity P-type electrode 10 is not prepared on top of the main cavity P-type DBR layer 81 and the sub-cavity P-type DBR layer 82, but is positioned on one side of the main cavity P-type DBR layer 81 and the sub-cavity P-type DBR layer 82, the main cavity P-type electrode 10 and the main cavity N-type electrode 11 are positioned above and below the active layer 4, respectively, and when current is injected into the main cavity P-type electrode 10, the current does not pass through the main cavity P-type DBR layer 81 and the sub-cavity P-type DBR layer 82, parasitic resistance and parasitic capacitance of the device can be effectively reduced, thereby improving the bandwidth.
The high-speed photon-photon resonance surface emitting laser with the cavity inner contact can effectively reduce the current congestion effect of the main cavity while reducing the loss of the auxiliary cavity. For photon-photon resonance structures, a slight structural optimization would lead to a significant increase in bandwidth. Therefore, the high-speed photon-photon resonance surface emitting laser with the intra-cavity contact can realize further improvement of the VCSEL bandwidth, and provides a foundation for increasing data flow rate and speed requirements.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, the different embodiments or examples described in this specification and the features of the different embodiments or examples may be combined and combined by those skilled in the art without contradiction.
While embodiments of the present invention have been shown and described above, it will be understood that the above embodiments are illustrative and not to be construed as limiting the invention, and that variations, modifications, alternatives and variations may be made to the above embodiments by one of ordinary skill in the art within the scope of the invention.
The above embodiments of the present invention do not limit the scope of the present invention. Any of various other corresponding changes and modifications made according to the technical idea of the present invention should be included in the scope of the claims of the present invention.

Claims (8)

1. The high-speed photon-photon resonance surface emitting laser comprises an N-type substrate, an N-type contact layer, an N-type DBR layer, an active layer, a P-type contact layer and a P-type DBR layer are sequentially prepared on the N-type substrate, a current limiting layer is prepared between the P-type contact layer and the active layer and/or between the N-type contact layer and the active layer, the P-type DBR layer comprises a main cavity P-type DBR layer and at least one auxiliary cavity P-type DBR layer, and the high-speed photon-photon resonance surface emitting laser is characterized in that a main cavity P-type electrode is prepared on the P-type contact layer at a position corresponding to the main cavity P-type DBR layer, and a main cavity N-type electrode is prepared on the N-type contact layer at a position corresponding to the main cavity P-type DBR layer.
2. The intracavity contact high speed photon-photon resonant surface emitting laser as claimed in claim 1 wherein the main cavity P-type DBR layer, the active layer and the N-type DBR layer form a main resonant cavity, the sub-cavity P-type DBR layer, the active layer and the N-type DBR layer form a sub-resonant cavity, the main resonant cavity and the sub-resonant cavity are electrically isolated by ion implantation, and horizontal projections of the main resonant cavity and the sub-resonant cavity are circular, elliptical or polygonal.
3. The intracavity contact high speed photon resonant surface emitting laser of claim 1 wherein non-oxidized current holes are formed in the interior of the current confinement layer at locations corresponding to the primary and secondary resonant cavities.
4. The intracavity contact high speed photon-photon resonant surface emitting laser of claim 4 wherein said current aperture is circular, elliptical or polygonal.
5. The intracavity contacted high speed photon-photon resonant surface emitting laser of claim 1 wherein the active layer is a quantum dot structure, a quantum well structure, or a separation confinement heterojunction structure.
6. The intracavity contact high speed photon-photon resonant surface emitting laser of claim 1 wherein the distance between said primary and secondary cavities and the distance between said secondary cavities is 0-30 μm.
7. An intracavity contact high speed photon-photon resonant surface emitting laser as claimed in claim 1 wherein said P-type DBR layer is comprised of SiO 2 /Si 3 N 4 And the N-type DBR layer adopts an N-type doped AlGaAs alternating layer.
8. The intracavity contact high speed photon-photon resonant surface emitting laser of claim 1 wherein a current buffer layer is prepared between said active layer and said current confinement layer.
CN202311394356.3A 2023-10-25 2023-10-25 Intracavity contact high speed photon-photon resonant surface emitting laser Pending CN117458266A (en)

Priority Applications (1)

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CN202311394356.3A CN117458266A (en) 2023-10-25 2023-10-25 Intracavity contact high speed photon-photon resonant surface emitting laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202311394356.3A CN117458266A (en) 2023-10-25 2023-10-25 Intracavity contact high speed photon-photon resonant surface emitting laser

Publications (1)

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CN117458266A true CN117458266A (en) 2024-01-26

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Country Status (1)

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