CN117457827A - High-voltage inverted light-emitting diode chip and light-emitting device - Google Patents
High-voltage inverted light-emitting diode chip and light-emitting device Download PDFInfo
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- CN117457827A CN117457827A CN202311430127.2A CN202311430127A CN117457827A CN 117457827 A CN117457827 A CN 117457827A CN 202311430127 A CN202311430127 A CN 202311430127A CN 117457827 A CN117457827 A CN 117457827A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- General Physics & Mathematics (AREA)
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Abstract
The application provides a high-voltage flip LED chip and a light-emitting device, wherein the high-voltage flip LED chip comprises N semiconductor light-emitting units, a contact electrode and a bridging electrode, and the N semiconductor light-emitting units are arranged in a preset direction and are insulated and spaced through isolation grooves; the second contact electrode arranged in the first light-emitting unit is of an annular structure and surrounds the first contact electrode in the first light-emitting unit, so that the expansion range of current is effectively increased, and the anti-static breakdown capability of the chip is improved; the high-voltage inverted LED chip further comprises a boss arranged in the central area of the high-voltage inverted LED chip, the area where the boss is located is the action area of the thimble, and the boss and the adjacent semiconductor light-emitting units are insulated and spaced through the isolation groove, so that the problem of chip leakage failure caused by the action of the thimble can be effectively prevented; the application also provides a light-emitting device comprising the high-voltage inverted light-emitting diode chip.
Description
Technical Field
The present disclosure relates to semiconductor manufacturing technology, and more particularly, to a flip-chip high-voltage light emitting diode and a light emitting device.
Background
The light emitting diode (Light Emitting Diode, LED) is a semiconductor solid state light emitting device, which has the advantages of high operating voltage, small driving current, etc. for high voltage light emitting diode chips, and low thermal resistance, no wire bonding, etc. for flip-chip light emitting diode chips. With the development of semiconductor technology and the active competition of market, the high-voltage chip with the flip-chip structure gradually becomes a research hot spot of a plurality of institutions, and the high-voltage flip-chip LED chip combines the advantages of the high-voltage LED chip and the flip-chip LED chip, so that the high-voltage flip-chip LED chip is gradually favored by the market.
For LED chips, anti-static breakdown (ESD) capability is an important parameter for measuring the performance of LED chips, and researchers often adopt various protection measures to avoid the chips from being impacted by static electricity. The existing high-voltage flip LED chip is formed by connecting a plurality of sub-chips in series, so that the size of a single sub-chip is smaller, and the ESD capacity of the high-voltage flip LED chip is reduced.
Disclosure of Invention
The application aims to provide a high-voltage flip-chip light-emitting diode chip and a light-emitting device, which can effectively increase the expansion range of current and improve the expansion effect of the current, thereby improving the ESD capacity of the high-voltage flip-chip light-emitting diode chip.
To achieve the above and other related objects, the present application provides a high-voltage flip-chip light emitting diode chip, comprising:
the semiconductor light-emitting units are arranged in a preset direction, isolation grooves are formed between adjacent semiconductor light-emitting units to separate the adjacent semiconductor light-emitting units, and each semiconductor light-emitting unit comprises a first semiconductor layer, an active layer and a second semiconductor layer which are stacked in sequence;
a contact electrode disposed in the semiconductor light emitting unit, the contact electrode including a first contact electrode electrically connected to the first semiconductor layer, and a second contact electrode electrically connected to the second semiconductor layer;
the bridge electrode is positioned above the isolation groove and is respectively connected with a first contact electrode and a second contact electrode in two adjacent semiconductor light-emitting units so as to enable the two adjacent semiconductor light-emitting units to be connected in series;
a pad layer over the contact electrode, the pad layer including a first pad electrically connected to the first contact electrode and a second pad electrically connected to the second contact electrode;
Among the N semiconductor light emitting units, the semiconductor light emitting unit below the first bonding pad is denoted as a first light emitting unit, the semiconductor light emitting unit below the second bonding pad is denoted as an nth light emitting unit, and the second contact electrode in the first light emitting unit is in a ring structure and surrounds the first contact electrode corresponding to the second contact electrode, where N is a positive integer greater than 1.
The application also provides a light-emitting device, which comprises a circuit substrate and a light-emitting element arranged on the circuit substrate, wherein the light-emitting element comprises the flip-chip high-voltage light-emitting diode chip in any one of the previous embodiments.
The application provides a high-voltage upside down light emitting diode chip and lighting device has following beneficial effect at least:
the high-voltage flip-chip light-emitting diode chip comprises N semiconductor light-emitting units, wherein two adjacent semiconductor light-emitting units are insulated and spaced through an isolation groove, and are connected in series through bridging electrodes positioned on the isolation groove, contact electrodes are arranged in the semiconductor light-emitting units, the second contact electrodes in the first light-emitting units are arranged to be of annular structures, and surround the first contact electrodes in the first light-emitting units, so that the expansion range of current is effectively enlarged, the charge quantity which can be born by the high-voltage flip-chip light-emitting diode chip is increased, and the ESD capacity of the high-voltage flip-chip light-emitting diode chip is improved.
The light-emitting device provided by the application comprises any one of the high-voltage inverted light-emitting diode chips in the embodiment, so that the light-emitting device has the beneficial effects.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered limiting the scope, and that other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic diagram of a high voltage flip LED chip in the prior art.
Fig. 2 is a schematic structural diagram of a high-voltage flip-chip LED chip according to an alternative embodiment of the present application.
Fig. 3 shows a cross-sectional view of the high voltage flip-chip LED chip of fig. 2 along A-A'.
Fig. 4 is a schematic structural view of a first light emitting unit in the high voltage flip LED chip shown in fig. 2.
Fig. 5a shows a schematic structural diagram of a high voltage flip LED chip according to an alternative embodiment of the present application.
Fig. 5b shows a schematic structural diagram of a high voltage flip LED chip according to an alternative embodiment of the first embodiment of the present application.
Fig. 6 is a schematic structural diagram of an nth light emitting unit in a high voltage flip LED chip according to a second embodiment of the present disclosure.
Fig. 7 is a schematic structural diagram of a high-voltage flip-chip LED chip according to a third embodiment of the present application.
Fig. 8 shows a cross-sectional view of the high voltage flip-chip LED chip shown in fig. 7 along the direction B-B'.
Fig. 9 is a schematic structural diagram of a light emitting device according to a fourth embodiment of the present disclosure.
List of reference numerals:
1. substrate 21 semiconductor light emitting unit
22. Isolation groove 23 contact electrode
24. Bridge electrode 25 current blocking layer
26. Transparent conductive layer 27 insulating reflective layer
28. First semiconductor layer of pad layer 201
202. Active layer 203 second semiconductor layer
204. First connecting line 221 boss
231. First contact electrode 232 second contact electrode
241. Bridge electrode extension 271 through hole
281. First pad 282 second pad
2711. First via 2712 second via
300. Light emitting device 301 circuit board
302. Third through hole of light-emitting element 205
211. First light-emitting unit 212 nth light-emitting unit
Detailed Description
Other advantages and effects of the present application will become apparent to those skilled in the art from the present disclosure, when the following description of the present application is taken in conjunction with the accompanying drawings. The present application may be embodied or carried out in other specific embodiments and with various details, modifications, alterations, or combinations of the application may be made without departing from the spirit of the application, and from various perspectives and applications.
In the description of the present application, it should be noted that the terms "first," "second," and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance; the terms "center", "longitudinal", "lateral", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. refer to the orientation or positional relationship based on that shown in the drawings, for convenience of description and for simplicity of description of the present application, and are not to be construed as limiting the present application; the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected or detachably connected; when a layer is referred to as being "between" two layers, it can be the only layer between the two layers or one or more intervening layers may also be present. The specific meaning of the above terms in the present application can be understood by those skilled in the art according to the specific circumstances.
Referring to fig. 1, in the prior art, a high voltage flip LED chip is formed by connecting two or more sub-chips in series, so that the size of each sub-chip is smaller, and the ESD capability of the high voltage flip LED chip is reduced. In addition, the P-type electrode and the N-type electrode in the high-voltage inverted LED chip are generally designed in parallel, so that the current between the P-type electrode and the N-type electrode can only be expanded in parallel, the expansion range of the current is reduced, and the ESD capacity of the high-voltage inverted LED chip is reduced.
To address the above-mentioned drawbacks in the prior art, in order to improve the ESD capability of the high-voltage flip-chip LED chip, the present application provides a high-voltage flip-chip LED chip, including:
the semiconductor light-emitting units are arranged in a preset direction, isolation grooves are formed between adjacent semiconductor light-emitting units to separate the adjacent semiconductor light-emitting units, and each semiconductor light-emitting unit comprises a first semiconductor layer, an active layer and a second semiconductor layer which are stacked in sequence;
a contact electrode disposed in the semiconductor light emitting unit, the contact electrode including a first contact electrode electrically connected to the first semiconductor layer, and a second contact electrode electrically connected to the second semiconductor layer;
The bridge electrode is positioned above the isolation groove and is respectively connected with a first contact electrode and a second contact electrode in two adjacent semiconductor light-emitting units so as to enable the two adjacent semiconductor light-emitting units to be connected in series;
a pad layer over the contact electrode, the pad layer including a first pad electrically connected to the first contact electrode and a second pad electrically connected to the second contact electrode;
among the N semiconductor light emitting units, the semiconductor light emitting unit below the first bonding pad is denoted as a first light emitting unit, the semiconductor light emitting unit below the second bonding pad is denoted as an nth light emitting unit, and the second contact electrode in the first light emitting unit is in a ring structure and surrounds the first contact electrode corresponding to the second contact electrode, where N is a positive integer greater than 1.
The second contact electrode in the first light-emitting unit is arranged to be of an annular structure and surrounds the first contact electrode in the first light-emitting unit, so that the expansion range of current is enlarged, the expansion effect of the current is improved, the charge quantity which can be borne by the high-voltage flip-chip light-emitting diode is increased, and the ESD (electro-static discharge) capability of the high-voltage flip-chip light-emitting diode is improved.
Optionally, the high-voltage flip-chip light emitting diode chip further includes a boss, the boss is located in the isolation groove, and the boss and the semiconductor light emitting unit are insulated and spaced by the isolation groove.
Optionally, the boss is located in a central region of the high-voltage flip-chip light emitting diode chip.
Optionally, the boss is a circular boss structure, and the diameter of the top surface of the boss is 80-100 μm.
The area where the boss is located is the thimble action area of the high-voltage inverted LED chip, the boss is formed by surrounding the center area of the high-voltage inverted LED chip through the isolation groove, and the boss and the adjacent semiconductor light-emitting units are isolated through the isolation groove, so that the problem of chip leakage failure caused by the thimble action can be effectively prevented.
Optionally, the width of the second contact electrode in the first light emitting unit is smaller than the width of the bridge electrode, wherein the width of the second contact electrode is the difference between the outer diameter and the inner diameter of the second contact electrode in a ring structure.
Optionally, the width of the second contact electrode in the first light emitting unit is between 5 μm and 19 μm.
Optionally, in the first light emitting unit, a ratio between an outer diameter of the second contact electrode having a ring structure and a narrow side width of the first light emitting unit is between 0.5 and 0.9.
Optionally, in a top view of the high-voltage flip-chip light emitting diode chip, the first contact electrode in the first light emitting unit is located in a central area of the second contact electrode.
Optionally, the first contact electrode in the first light emitting unit has a truncated cone structure.
Optionally, in the first light emitting unit, a distance between the first contact electrode and the second contact electrode in a truncated cone structure is between 65 μm and 84 μm.
The size of the second contact electrode in the first light-emitting unit is further limited through preset technological parameters, the first contact electrode is arranged to be of a round table structure and is arranged in the center area of the second contact electrode according to the structure of the second contact electrode, meanwhile, the distance between the second contact electrode and the first contact electrode in the first light-emitting unit is reasonably controlled through adjusting the size of the first contact electrode, on one hand, the light absorption area of the high-voltage flip LED chip can be reduced to the greatest extent, on the other hand, the current expansion range between the first contact electrode and the second contact electrode can be increased to the greatest extent, and therefore the high-voltage flip LED chip has good light-emitting capacity and ESD capacity.
Optionally, the contact electrode in the first light emitting unit includes at least one second contact electrode, and the first contact electrode in the first light emitting unit is disposed corresponding to the second contact electrode. According to the sizes of the high-voltage flip LED chip and the semiconductor light-emitting unit, a plurality of first contact electrodes and second contact electrodes can be arranged in the first light-emitting unit, so that uniform distribution of current can be effectively ensured, and the current expansion effect is improved, so that the light-emitting capacity and the ESD capacity of the high-voltage flip LED chip are improved.
Optionally, the bridging electrode has at least one bridging electrode extension.
Optionally, the bridging electrode extension extends into two adjacent semiconductor light emitting units and is respectively connected with the first contact electrode and the second contact electrode in the two adjacent semiconductor light emitting units, so that the two adjacent semiconductor light emitting units are connected in series. The bridging electrode connects the first contact electrode and the second contact electrode in the two adjacent semiconductor light-emitting units through the bridging electrode extension part, so that the two adjacent semiconductor light-emitting units are connected in series, and the ESD capability of the high-voltage inverted LED chip is ensured.
Optionally, the second contact electrode in the nth light emitting unit is in an arc structure, and the first contact electrode in the nth light emitting unit is located at a side of the arc structure recess of the second contact electrode. By arranging the second contact electrode in the Nth light-emitting unit to be of an arc-shaped structure, the light absorption area of the high-voltage inverted LED chip can be reduced, and therefore the light-emitting capacity of the high-voltage inverted LED chip is improved.
Optionally, in the nth light emitting unit, a connection line between two ends of the arc-shaped structure of the second contact electrode is denoted as a first connection line, and the first contact electrode in the nth light emitting unit is in a strip-shaped structure and is perpendicular to the first connection line.
Optionally, in a top view of the nth light emitting unit, a distance between an end of the first contact electrode near the second contact electrode and the first connection line is denoted as a first distance, and the first distance is between 0 and 10 μm when the first contact electrode intersects the first connection line.
Optionally, in a top view of the nth light emitting unit, a region surrounded by the second contact electrode forming the first connection line and the first connection line is denoted as a first region, and when the first contact electrode is located outside the first region, the first distance is between 0 and 50 μm.
When one end of the first contact electrode in the Nth light-emitting unit, which is close to the second contact electrode, is positioned in the first area, a good current expansion effect is achieved between the first contact electrode and the second contact electrode, but the area of the first contact electrode is larger because the first contact electrode extends between the first connecting wire and the second contact electrode, so that the light absorption area of the high-voltage flip LED chip is increased, and meanwhile, the distance between the first contact electrode and the second contact electrode is too short, and the ESD (electro-static discharge) capability of the high-voltage flip LED chip is reduced; when the first contact electrode in the Nth light-emitting unit is positioned outside the first area, the first contact electrode has a smaller area, so that the light absorption area of the high-voltage flip LED chip is reduced, but the current expansion effect between the first contact electrode and the second contact electrode is also reduced; the distance between one end of the first contact electrode, which is close to the second contact electrode, and the first connecting line is reasonably controlled, so that the high-voltage flip LED chip has a good current expansion effect and a small light absorption area.
Optionally, the high-voltage flip-chip light emitting diode chip further includes:
the current blocking layer is positioned on the surface of the semiconductor light-emitting unit and covers part of the side wall and the bottom of the isolation groove;
a transparent conductive layer covering at least a portion of the current blocking layer;
the insulating reflecting layer covers the contact electrode, the bridging electrode, the transparent conducting layer and the isolation groove, a through hole is formed in the insulating reflecting layer, the through hole penetrates through the insulating reflecting layer, the bonding pad layer is located on the surface of the insulating reflecting layer and is electrically connected with the contact electrode in the semiconductor light-emitting unit through the through hole.
Optionally, the through hole in the insulating reflective layer includes:
the first through hole is positioned above the first light-emitting unit in the high-voltage inverted light-emitting diode chip and exposes part of the first contact electrode in the first light-emitting unit;
and the second through hole is positioned above the Nth light emitting unit in the high-voltage inverted light emitting diode chip and exposes part of the second contact electrode in the Nth light emitting unit.
The surface of the second semiconductor layer and the side wall and the bottom of part of the isolation groove are provided with a current blocking layer and a transparent conducting layer, at least part of the current blocking layer is covered by the transparent conducting layer, the current blocking layer can effectively block the vertical current transmission between the contact electrode and the second semiconductor layer, the transmission of transverse current is promoted, the transparent conducting layer has good conductivity and can be used as a current expansion layer, the local concentration difference of the current can be effectively reduced, the current is ensured to be uniformly distributed, the generation of current hot spots in the high-voltage inverted LED chip is avoided, the service life and the stability of the high-voltage inverted LED chip are improved, and the transparent conducting layer also has good light transmittance, so that more light escapes from the high-voltage inverted LED chip, and the luminous efficiency of the high-voltage inverted LED chip is improved; the insulating reflecting layer can be used as a protecting layer and a reflecting layer, can protect devices from external damage, ensures the reflecting effect of light radiated by the semiconductor light-emitting unit, and is beneficial to improving the light-emitting brightness and the light efficiency of the high-voltage flip LED chip.
The application provides a light-emitting device, including circuit substrate and set up the light-emitting component on the circuit substrate, the light-emitting component includes the high-voltage down-loading light-emitting diode chip of any one of the aforesaid embodiment modes, has good ESD ability.
Example 1
The present embodiment provides a high-voltage flip-chip LED chip, referring to fig. 2, which includes N semiconductor light emitting units 21, a contact electrode 23, a bridge electrode 24, and a pad layer 28, where N is a positive integer greater than 1, and of the N semiconductor light emitting units 21, the semiconductor light emitting unit located under a first pad 281 in the pad layer 28 is denoted as a first light emitting unit 211, and the semiconductor light emitting unit located under a second pad 282 in the pad layer is denoted as an nth light emitting unit 212.
In the flip-chip high-voltage LED chip of the present embodiment, N semiconductor light emitting units 21 are arranged according to a preset direction, and isolation grooves 22 are provided between adjacent semiconductor light emitting units 21, and adjacent semiconductor light emitting units 21 are spaced apart by insulation, preferably, referring to fig. 3, in a cross-sectional view of the high-voltage flip-chip along the A-A', the side walls of the isolation grooves 22 are inclined side walls, so that the side walls are favorable for emitting light, the light emitting area can be increased, and the brightness can be improved; further, the included angle between the side wall of the isolation groove 22 and the bottom surface of the isolation groove 22 is 120-140 degrees. The semiconductor light emitting unit 21 is any light emitting unit capable of radiating light under the action of voltage, and the semiconductor light emitting unit 21 comprises a first semiconductor layer 201, an active layer 202 and a second semiconductor layer 203 which are stacked in sequence, wherein the first semiconductor layer 201 and the second semiconductor layer 203 provide carriers for the semiconductor light emitting unit 21, and the active layer 202 is a light emitting region in the semiconductor light emitting unit 21.
In an alternative embodiment, the first semiconductor layer 201 is an N-type semiconductor layer, and the second semiconductor layer 203 is a P-type semiconductor layer; the first semiconductor layer 201 of N type provides electrons by doping N type impurities, the second semiconductor layer 203 of P type provides holes by doping P type impurities, and the first semiconductor layer 201 and the second semiconductor layer 203 may be aluminum indium phosphorus (AlInP) or aluminum gallium indium phosphorus (AlGaInP) based material layers. Further, N-type impurities may be Si, ge, sn, se, te, etc., and P-type impurities may be Mg, zn, ca, sr, C, ba, etc.; specifically, the N-type impurity has a doping concentration of 1E 18 Atoms/cm 3 ～2E 18 Atoms/cm 3 The Si and P type impurity is C. The active layer 202 may be a single heterostructure, a double heterostructure, or a multi-layer quantum well structure, and the active layer 202 may be made of a semiconductor material of gallium arsenide (GaAs) series, aluminum gallium indium nitride (AlGaInN) series, aluminum indium phosphorus (AlInP) series, or aluminum indium gallium phosphide (AlGaInP) series, which is not limited in this embodiment.
The contact electrode 23 in the high-voltage flip-chip LED chip of the present embodiment is provided in the semiconductor light emitting unit 21, and includes a first contact electrode 231 and a second contact electrode 232. In an alternative embodiment, the first contact electrode 231 in the semiconductor light emitting unit 21 is electrically connected to the first semiconductor layer 201, and the second contact electrode 232 is electrically connected to the second semiconductor layer 203; further, a third via hole 205 is formed in the first light emitting unit 211, the third via hole 205 penetrates the second semiconductor layer 203 and the active layer 202 in the first light emitting unit 211 and exposes the first semiconductor layer 201, and a first contact electrode 231 is formed on a surface of the first semiconductor layer 201. Preferably, among the N semiconductor light emitting units 21, the second contact electrode 232 of the first light emitting unit 211 has a ring-shaped structure and surrounds the first contact electrode 231. By surrounding the first contact electrode 231 by the second contact electrode 232 in the first light emitting unit 211, the expansion range of the current in the first light emitting unit 211 can be effectively increased, so that the loadable charge amount of the high-voltage flip-chip LED chip is increased, and the ESD capacity of the high-voltage flip-chip LED chip is improved; in addition, the second contact electrode 232 of the first light emitting unit 211 has a ring structure, so that the light absorption area of the second contact electrode 232 is reduced to the greatest extent under the condition that the ESD capability of the high-voltage inverted LED chip can be ensured, and the light emitting effect of the high-voltage inverted LED chip is improved.
In an alternative embodiment, the ratio of the outer diameter of the second contact electrode 232 in the first light emitting unit 211 to the width of the narrow side of the first light emitting unit is between 0.5 and 0.9, and the width of the second contact electrode 232 in the annular structure is smaller than the width of the bridging electrode 24, preferably, the ratio of the outer diameter of the second contact electrode 232 in the first light emitting unit 211 to the width of the narrow side of the first light emitting unit is between 0.68 and 0.86, the width of the second contact electrode 232 in the annular structure in the first light emitting unit 211 is between 5 μm and 19 μm, and the width of the second contact electrode 232 refers to the difference between the outer diameter and the inner diameter of the second contact electrode 232. Further, the width of the narrow side of the first light emitting unit 211 is 228 μm, the outside diameter of the second contact electrode 232 is 180 μm, that is, the ratio of the outside diameter of the second contact electrode 232 to the width of the narrow side of the first light emitting unit 211 in the first light emitting unit 211 is 0.79, and the width of the second contact electrode 232 is 5 μm.
In an alternative embodiment, referring to fig. 4, the contact electrode 23 in the first light emitting unit 211 includes at least one second contact electrode 232, and the first contact electrode 231 in the first light emitting unit 211 is disposed corresponding to the second contact electrode 232; preferably, the contact electrode 23 in the first light emitting unit 211 may include two second contact electrodes 232. According to the sizes of the high-voltage flip-chip LED chip and the semiconductor light-emitting unit 21, one or more first contact electrodes 231 and second contact electrodes 232 can be arranged in the first light-emitting unit 211, so that uniform distribution of current in the first light-emitting unit 211 can be effectively ensured, and the current expansion effect is improved, so that the light-emitting capability and the ESD capability of the high-voltage flip-chip LED chip are improved.
In another alternative embodiment, the first contact electrode 231 in the first light emitting unit 211 is located in the central area of the second contact electrode 232, further, the first contact electrode 231 in the first light emitting unit 211 is in a truncated cone structure, and the distance between the first contact electrode 231 and the corresponding second contact electrode 232 in the first light emitting unit 211 is between 65 μm and 84 μm.
The size of the second contact electrode 232 in the first light emitting unit 211 and the distance between the second contact electrode 232 and the corresponding first contact electrode 231 are reasonably controlled according to preset parameters, so that the light absorption area can be reduced to the greatest extent under the condition of ensuring a larger current expansion range, and the high-voltage inverted LED chip has better light emitting capability and ESD capability.
The material of the contact electrode 23 includes, but is not limited to, one or more of chromium, titanium, platinum, gold, nickel or aluminum, and the structure of the contact electrode 23 may be a single-layer structure or a stacked-layer structure composed of the above metals; further, the contact electrode 23 has a laminated structure and includes an adhesion layer, a reflective layer, a barrier layer, and a gold layer; the adhesion layer is a titanium layer or a chromium layer, the reflecting layer is an aluminum layer and can enhance light extraction, the blocking layer is a titanium layer, a nickel layer or a platinum layer and can block tin from penetrating into the high-voltage flip LED chip, and the tin is tin element in tin paste used when the LED comprising the high-voltage flip LED chip is fixed on the packaging substrate.
In an alternative embodiment, referring to fig. 5a, the value of N may be taken as 2, that is, the semiconductor light emitting unit 21 includes a first light emitting unit 211 and a second light emitting unit, that is, an nth light emitting unit 212 in this embodiment, where the first light emitting unit 211 and the second light emitting unit are insulated by the isolation slot 22 and each light emitting unit includes a second contact electrode 232 and a first contact electrode 231 correspondingly disposed, and two ends of the bridge electrode 24 are respectively connected to the second contact electrode 232 in the first light emitting unit 211 and the first contact electrode 231 in the second light emitting unit, so that the first light emitting unit 211 is connected in series with the second light emitting unit. Referring to fig. 5b, the value of N may be 3, that is, the semiconductor light emitting unit 21 includes a first light emitting unit 211, a second light emitting unit and a third light emitting unit insulated by the isolation groove 22, and the third light emitting unit is that the nth light emitting unit 212,3 semiconductor light emitting units 21 in this embodiment are connected in series through the bridge electrode 24, where the structure of the second light emitting unit may adopt the structure of the first light emitting unit 211, the structure of the third light emitting unit, or other semiconductor structures, and further, the structure of the second light emitting unit is the same as the structure of the third light emitting unit. When the value of N is other than 3, the 2 nd to N-1 st light emitting units may have the same or different structures, and in an alternative embodiment, the structures of the N-2 semiconductor light emitting units 21 are the same as the structures of the first light emitting unit 211 or the N-th light emitting unit 212.
The bridge electrode 24 in the high-voltage flip-chip LED chip of the present embodiment is located above the isolation groove 22, and the bridge electrode 24 is respectively connected to the first contact electrode 231 and the second contact electrode 232 in the two adjacent semiconductor light emitting units 21, so that the N semiconductor light emitting units 21 are connected in series, so as to improve the voltage-withstanding capability of the high-voltage flip-chip LED chip. Further, the bridge electrode 24 includes at least one bridge electrode extension 241, and in particular, the bridge electrode 24 may include two bridge electrode extensions 241, and the bridge electrode extensions 241 extend into the adjacent two semiconductor light emitting units 21 and are electrically connected to the first contact electrode 231 and the second contact electrode 232 in the adjacent two semiconductor light emitting units 21, respectively, so as to connect the adjacent two semiconductor light emitting units 21 in series.
The material of the bridging electrode 24 includes, but is not limited to, one or more of chromium, titanium, platinum, gold, nickel or aluminum, and the structure of the bridging electrode 24 may be a single-layer structure or a stacked-layer structure composed of the above metals; preferably, the bridge electrode 24 is the same in structure and composition as the contact electrode 23.
In an alternative embodiment, the high-voltage inverted LED chip further includes a current blocking layer 25 and a transparent conductive layer 26, where the transparent conductive layer 26 is formed on the surface of the semiconductor light emitting unit 21, and has good conductivity and light transmittance, and the transparent conductive layer 26 can be used as a current expansion layer, so that a local concentration difference of current can be effectively reduced, current is ensured to be uniformly distributed, a current hot spot is prevented from being generated in the high-voltage inverted LED chip, and the service life and stability of the high-voltage inverted LED chip are improved; the current blocking layer 25 is disposed under the contact electrode 23 and is spaced apart from the contact electrode 23 by the transparent conductive layer 26, and the current blocking layer 25 can effectively block vertical current transmission between the contact electrode 23 and the semiconductor light emitting unit 21, facilitating lateral current transmission.
Further, a transparent conductive layer 26 is formed on the surface of the second semiconductor layer 203, the transparent conductive layer 26 including, but not limited to, an indium oxide layer, an indium tin oxide layer, an aluminum doped indium oxide or an indium tin oxide layer; the portion of the current blocking layer 25 below the second contact electrode 232 and above the isolation trench 22 in each semiconductor light emitting cell 21, the current blocking layer 25 is spaced from the second contact electrode 232 by a transparent conductive layer 26, and the bridge electrode 24 is spaced from the bottom and sidewalls of the isolation trench 22 by the current blocking layer 25, the current blocking layer 25 being made of any one of or other acceptable materials including, but not limited to, silicon dioxide, titanium pentoxide, silicon nitride, aluminum oxide, preferably the current blocking layer 25 is a silicon dioxide monolayer.
In an alternative embodiment, the high voltage flip-chip LED chip further comprises an insulating reflective layer 27. An insulating reflective layer 27 is formed on the surface of the semiconductor light emitting unit 21 and covers the transparent conductive layer 26, the contact electrode 23, and the isolation trench 22, and further, the insulating reflective layer 27 covers the bridging electrode 24. The insulating reflective layer 27 is provided with a via 271 penetrating the insulating reflective layer 27, and the pad layer 28 is located on the surface of the insulating reflective layer 27 and is electrically connected to the contact electrode 23 in the semiconductor light emitting unit 21 through the via 271.
The insulating reflective layer 27 includes, but is not limited to, a single insulating layer or Bragg reflective layer, and the material of the insulating reflective layer 27 may be SiO 2 、SiN、TiO 2 、ZnO 2 、ZrO 2 、Cu 2 O 3 At least two of (a) and (b); further, the insulating reflective layer 27 is a distributed bragg mirror formed by alternately stacking a high refractive index material and a low refractive index material. Insulating reflective layer 27 provides semiconductor light emissionThe light radiated by the unit 21 has high reflectivity, thereby ensuring the reflection effect of the light radiated by the semiconductor light emitting unit 21; in addition, the insulating reflective layer 27 can also serve as a protective layer to protect the device from outside moisture, impurities, etc., and prolong the service life of the semiconductor device.
In an alternative embodiment, the via 271 in the insulating reflective layer 27 includes a first via 2711 and a second via 2712, and the pad layer 28 includes a first pad 281 and a second pad 282; the first via hole 2711 is located above the first light emitting unit in the high-voltage inverted LED chip, and exposes a portion of the first contact electrode 231 in the first light emitting unit, and the first pad 281 is electrically connected with the first contact electrode 231 in the first light emitting unit through the first via hole 2711; the second via hole 2712 is located above the nth light emitting unit in the high voltage inverted LED chip, and exposes a portion of the second contact electrode 232 in the nth light emitting unit, and the second pad 282 is electrically connected to the second contact electrode 232 in the nth light emitting unit through the second via hole 2712. The pad layer 28 may include one or more of Cr, al, ag, ni, ti, pt, au and may have a single layer structure or a stacked structure, and preferably, the pad layer 28 has the same stacked structure as the contact electrode 23 and the bridge electrode 24.
In an alternative embodiment, the high-voltage inverted LED chip further includes a substrate 1, the substrate 1 is a transparent substrate 1, the semiconductor light emitting units 21 are formed on one surface of the substrate 1, and the first semiconductor layer 201 in the semiconductor light emitting units 21 is connected to the substrate 1, light radiated from the active layer 202 may radiate light from the surface of the substrate 1, and the bottoms of the isolation trenches 22 extend into the surface of the substrate 1 or the substrate 1, thereby insulating the N semiconductor light emitting units 21. Further, other structural layers that contribute to the semiconductor device, such as a bonding layer, may be further included between the substrate 1 and the semiconductor light emitting device, which is not limited to this embodiment. The substrate 1 may be an insulating substrate 1, a semiconductor substrate 1, a metal substrate 1, or the like, and preferably the substrate 1 is a sapphire substrate 1.
Example two
The present embodiment provides a high-voltage flip-chip light emitting diode chip that also includes N semiconductor light emitting units 21, contact electrodes 23, bridge electrodes 24, and a pad layer 28. The high-voltage flip-chip LED chip provided in this embodiment is not described in detail in the same manner as in the first embodiment, and is different in that:
referring to fig. 6, among the N semiconductor light emitting units 21 of the high voltage flip LED chip, the second contact electrode 232 in the nth light emitting unit 212 has an arc structure, the first contact electrode 231 has a bar structure, and the first contact electrode 231 is located at a side where the arc structure of the second contact electrode 232 is recessed. By setting the second contact electrode 232 in the nth light emitting unit to an arc structure, the light absorption area of the high-voltage inverted LED chip can be reduced, thereby improving the light emitting capability thereof.
In an alternative embodiment, the width of the arc structure of the second contact electrode in the nth light emitting unit 212 is the same as the width of the annular structure of the second contact electrode in the first light emitting unit 211, and the width of the arc structure of the second contact electrode in the nth light emitting unit 212 is greater than the width of the stripe structure of the first contact electrode; by reasonably controlling the widths of the bridge electrode 24, the first contact electrode and the second contact electrode in the nth light emitting unit 212 and the second contact electrode in the first light emitting unit 211, on one hand, the light absorption area of the high-voltage flip LED chip can be reduced, the current expansion capability of the high-voltage flip LED chip can be improved, the current is ensured to be uniformly distributed, on the other hand, the current transmission between two semiconductor light emitting units connected in series can be ensured, and the power consumption of the current transmission between two adjacent semiconductor light emitting units can be reduced.
In addition, a connection line between both ends of the arc-shaped structure of the second contact electrode 232 in the nth light emitting unit 212 is denoted as a first connection line 204, the stripe-shaped structure of the first contact electrode 231 is perpendicular to the first connection line 204, and the first connection line 204 is bilaterally symmetrical with respect to the stripe-shaped structure of the first contact electrode 231; preferably, the distance between the first contact electrode 231 and the first connection line 204 at the end of the nth light emitting unit 212 near the second contact electrode 232 is denoted as a first distance, the area surrounded by the second contact electrode 232 and the first connection line 204 forming the first connection line 204 is denoted as a first area, the first distance is between 0 and 50 μm when the first contact electrode 231 is located outside the first area, and the first distance is between 0 and 10 μm when the first contact electrode 231 intersects the first connection line 204; further, a distance between an end of the first contact electrode 231, which is close to the second contact electrode 232, and the first connection line 204 is 0, that is, a terminal end of the first contact electrode 231, which is close to the second contact electrode 232, is located on the first connection line 204.
When the first contact electrode 231 in the nth light emitting unit 212 is located inside the first region near one end of the second contact electrode 232, a better current spreading effect is provided between the first contact electrode 231 and the second contact electrode 232, but because the first contact electrode 231 extends between the first connecting wire and the second contact electrode 232, the area of the first contact electrode 231 is larger, the light absorption area of the high-voltage flip-chip LED chip is improved, and meanwhile, the distance between the first contact electrode 231 and the second contact electrode 232 is too short, and the ESD capability of the high-voltage flip-chip LED chip is reduced; when the first contact electrode 231 in the nth light emitting unit 212 is completely located outside the first area, the first contact electrode 231 has a smaller area, which reduces the light absorption area of the high voltage flip LED chip, but also reduces the current spreading effect between the first contact electrode 231 and the second contact electrode 232; by reasonably controlling the distance between the first contact electrode 231 and the first connecting wire 204 near the end of the second contact electrode 232, the high-voltage flip LED chip has better current expansion effect and smaller light absorption area.
Example III
The present embodiment provides another high-voltage flip-chip light emitting diode chip, which also includes N semiconductor light emitting units 21, contact electrodes 23, bridge electrodes 24, and pad layers 28. The high-voltage flip-chip LED chip provided in this embodiment is not described in detail in the same manner as in the first embodiment, and is different in that:
Referring to fig. 7 and 8, the high voltage flip-chip LED chip of the present embodiment further includes a boss 221, the boss 221 is formed in the isolation groove 22, the boss 221 is spaced apart from the adjacent semiconductor light emitting unit 21 by insulation of the isolation groove 22, and preferably, the boss 221 is located at a central region of the high voltage flip-chip LED chip. The area where the boss 221 in the high-voltage flip-chip LED chip of the present embodiment is located is the thimble action area, and by insulating the boss 221 from the adjacent semiconductor light emitting unit 21, the problem of chip leakage current failure generated during the thimble action can be effectively prevented.
In an alternative embodiment, the mesa 221 includes the first semiconductor layer 201, the active layer 202, and the second semiconductor layer 203, and preferably, the mesa 221 is a circular mesa structure, and a top surface diameter of the mesa 221 is 80 μm to 100 μm; specifically, the top surface diameter of the boss 221 may be 80 μm. The sidewall of the boss 221 may be an inclined surface or a vertical surface, and preferably, the sidewall of the boss 221 is an inclined surface having the same inclination angle as that of the sidewall of the other side of the isolation trench 22 adjacent to the boss 221, i.e., the included angle between the top surface of the boss 221 and the sidewall and the included angle between the sidewall of the isolation trench 22 and the top surface of the semiconductor light emitting unit 21 are the same.
In the high-voltage flip-chip LED chip of the present embodiment, the position of the semiconductor light emitting unit 21 adjacent to the boss 221 opposite to the boss 221 is provided with an avoidance region to avoid the boss 221, and the bridge electrodes 24 between the N semiconductor light emitting units 21 are disposed in other regions except the isolation grooves 22 surrounding the boss 221, and the insulating reflective layer 27 covers the top surface and the side walls of the boss 221; preferably, the insulating reflective layer 27 is formed with a recessed region above the boss 221 and the isolation trench 22 adjacent to the boss 221.
In order to verify the light emitting capability and ESD capability of the high voltage flip LED chip in this embodiment, referring to fig. 6, the structure of the high voltage flip LED chip in this embodiment is specifically limited, and the value of N is taken as 2, that is, the high voltage flip LED chip in this embodiment includes two semiconductor light emitting units 21, respectively denoted as a first light emitting unit and a second light emitting unit, each of which is provided with two second contact electrodes 232 and a first contact electrode 231 correspondingly disposed, the second contact electrode 232 in the first light emitting unit is provided with a ring-shaped structure with a width of 5 μm, the first contact electrode 231 is provided with a circular structure, the first contact electrode 231 in the second light emitting unit is provided with a stripe-shaped structure, the second contact electrode 232 is provided with an arc-shaped structure, the first light emitting unit and the second light emitting unit are connected in series by the bridge electrode 24, the center area of the high voltage flip LED chip is provided with a boss 221, and the top surface diameter of the boss 221 is 80 μm.
The high-voltage flip-chip LED chip having the above structure is denoted as a test chip, the high-voltage flip-chip LED chip of the prior art is denoted as a comparison chip (refer to fig. 1), and the plurality of test chips and the comparison chip are respectively subjected to a mechanical mode test to obtain corresponding ESD capabilities, specifically, ESD voltages are respectively applied to the test chip and the comparison chip, and the value of the applied ESD voltage is changed under the condition that the test chip or the comparison chip is normal until the test chip or the comparison chip is abnormal. The test results shown in table 1 are obtained by testing a plurality of test chips and comparison chips, and preferably, the number of the test chips and the comparison chips is 10K or more.
TABLE 1 test chip and results of ESD Capacity test of comparative chip
As shown in the test results of table 1, when the ESD voltage is-400V or 300V, the yield of the comparison chip and the test chip is approximately 100%, and when the ESD voltage is increased to-500V or 400V, the yield of the comparison chip is reduced to approximately 60%, and the yield of the test chip is still approximately 95%, so that compared with the high-voltage flip-chip LED chip in the prior art, the ESE capability of the high-voltage flip-chip LED chip in the embodiment is effectively improved.
In order to verify the light emitting effect of the high-voltage flip-chip LED chip of this embodiment, the same tester is used to perform brightness test on multiple test chips and comparison chips respectively, so as to obtain the corresponding full-test brightness of the chips, and preferably, the test numbers of the test chips and the comparison chips are all greater than or equal to 10K. Specifically, when the number of chips is 10K, the measured total brightness of the comparative chip is 143.6mW, the measured total brightness of the test chip is 144.8mW, and the brightness of the test chip is increased by 0.84% relative to the comparative chip. It can be seen that the high-voltage flip-chip LED chip of this embodiment has improved its light emission luminance compared to the high-voltage flip-chip LED chip of the prior art.
Example IV
The present embodiment provides a light emitting device, referring to fig. 8, the light emitting device 300 includes a circuit substrate 301 and at least one light emitting element 302 disposed on the circuit substrate 301, where the light emitting element 302 includes any of the high voltage inverted LED chips provided in the foregoing embodiments of the present application, and the light emitting device 300 may be an LED backlight device, an RGB display device, or other light emitting devices. Since the light emitting device includes the high-voltage flip-chip LED chip of the foregoing embodiment, the advantageous effects of the foregoing embodiment are also provided.
The foregoing embodiments are merely illustrative of the principles of the present application and their effectiveness, and are not intended to limit the application. Modifications, variations, or combinations of the above-described embodiments may be made by those skilled in the art without departing from the spirit and scope of the present application. Accordingly, it is intended that all equivalent modifications and variations which may be accomplished by persons skilled in the art without departing from the spirit and technical spirit of the disclosure be covered by the claims of this application.
Claims (20)
1. A high voltage flip-chip light emitting diode chip, comprising:
the semiconductor light-emitting units are arranged in a preset direction, isolation grooves are formed between adjacent semiconductor light-emitting units to separate the adjacent semiconductor light-emitting units, and each semiconductor light-emitting unit comprises a first semiconductor layer, an active layer and a second semiconductor layer which are stacked in sequence;
a contact electrode disposed in the semiconductor light emitting unit, the contact electrode including a first contact electrode electrically connected to the first semiconductor layer, and a second contact electrode electrically connected to the second semiconductor layer;
the bridge electrode is positioned above the isolation groove and is respectively connected with a first contact electrode and a second contact electrode in two adjacent semiconductor light-emitting units so as to enable the two adjacent semiconductor light-emitting units to be connected in series;
A pad layer over the contact electrode, the pad layer including a first pad electrically connected to the first contact electrode and a second pad electrically connected to the second contact electrode;
among the N semiconductor light emitting units, the semiconductor light emitting unit below the first bonding pad is denoted as a first light emitting unit, the semiconductor light emitting unit below the second bonding pad is denoted as an nth light emitting unit, and the second contact electrode in the first light emitting unit is in a ring structure and surrounds the first contact electrode corresponding to the second contact electrode, where N is a positive integer greater than 1.
2. The high-voltage flip-chip light emitting diode chip of claim 1, further comprising a boss located in the isolation trench, the boss being insulated from the semiconductor light emitting unit by the isolation trench.
3. The high-voltage flip-chip led chip of claim 2, wherein said boss is located in a central region of said high-voltage flip-chip led chip.
4. The high-voltage flip-chip light emitting diode chip of claim 2, wherein the boss is a circular boss structure, and the diameter of the top surface of the boss is 80 μm-100 μm.
5. The high-voltage flip-chip light emitting diode chip of claim 1, wherein a width of the second contact electrode in the first light emitting unit is smaller than a width of the bridge electrode, wherein the width of the second contact electrode is a difference between an outside diameter and an inside diameter of the second contact electrode in a ring-shaped structure.
6. The high-voltage flip-chip led chip of claim 5, wherein said second contact electrode in said first light emitting unit has a width of 5 μm to 19 μm.
7. The high-voltage flip-chip light emitting diode chip of claim 1, wherein a ratio between an outer diameter of the second contact electrode having a ring-like structure and a narrow side width of the first light emitting unit is 0.5 to 0.9.
8. The high-voltage flip-chip light emitting diode chip of claim 1, wherein the first contact electrode in the first light emitting unit is located in a central region of the second contact electrode in a top view of the high-voltage flip-chip light emitting diode chip.
9. The high-voltage flip-chip light emitting diode chip of claim 1, wherein the first contact electrode in the first light emitting unit has a truncated cone structure.
10. The high-voltage flip-chip light emitting diode chip of claim 9, wherein in the first light emitting unit, a pitch between the first contact electrode and the second contact electrode in a truncated cone structure is 65 μm to 84 μm.
11. The high-voltage flip-chip light emitting diode chip of claim 1, wherein the contact electrode in the first light emitting unit includes at least one second contact electrode, and the first contact electrode in the first light emitting unit is disposed corresponding to the second contact electrode.
12. The high voltage flip-chip light emitting diode chip of claim 1, wherein the bridge electrode has at least one bridge electrode extension.
13. The high voltage flip-chip led chip of claim 12, wherein said bridge electrode extension extends into two adjacent semiconductor light emitting units and is connected to a first contact electrode and a second contact electrode of two adjacent semiconductor light emitting units, respectively, to connect two adjacent semiconductor light emitting units in series.
14. The high-voltage flip-chip light emitting diode chip of claim 1, wherein the second contact electrode in the nth light emitting unit has an arc structure, and the first contact electrode in the nth light emitting unit is located at a side of the arc structure recess of the second contact electrode.
15. The high-voltage flip-chip light emitting diode chip of claim 14, wherein in the nth light emitting unit, a connection line between both ends of the arc-shaped structure of the second contact electrode is denoted as a first connection line, and the first contact electrode in the nth light emitting unit is in a stripe-shaped structure and perpendicular to the first connection line.
16. The high-voltage flip-chip light emitting diode chip of claim 15, wherein a distance between an end of the first contact electrode adjacent to the second contact electrode and the first connection line is denoted as a first distance in a top view of the nth light emitting unit, and the first distance is 0 to 10 μm when the first contact electrode intersects the first connection line.
17. The high-voltage flip-chip light emitting diode chip of claim 16, wherein a region surrounded by the second contact electrode forming the first wiring and the first wiring is denoted as a first region in a top view of the nth light emitting cell, and the first distance is 0 to 50 μm when the first contact electrode is located outside the first region.
18. The high-voltage flip-chip light emitting diode chip of claim 1, further comprising:
The current blocking layer is positioned on the surface of the semiconductor light-emitting unit and covers part of the side wall and the bottom of the isolation groove;
a transparent conductive layer covering at least a portion of the current blocking layer;
the insulating reflecting layer covers the contact electrode, the bridging electrode, the transparent conducting layer and the isolation groove, a through hole is formed in the insulating reflecting layer, the through hole penetrates through the insulating reflecting layer, and the bonding pad layer is located on the surface of the insulating reflecting layer and is electrically connected with the contact electrode in the semiconductor light-emitting unit through the through hole.
19. The high voltage flip-chip light emitting diode chip of claim 18, wherein the through-hole in the insulating reflective layer comprises:
the first through hole is positioned above the first light-emitting unit in the high-voltage inverted light-emitting diode chip and exposes part of the first contact electrode in the first light-emitting unit;
and the second through hole is positioned above the Nth light emitting unit in the high-voltage inverted light emitting diode chip and exposes part of the second contact electrode in the Nth light emitting unit.
20. A light-emitting device comprising a circuit board and a light-emitting element provided on the circuit board, wherein the light-emitting element comprises the high-voltage flip-chip light-emitting diode chip according to any one of claims 1 to 19.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311430127.2A CN117457827A (en) | 2023-10-27 | 2023-10-27 | High-voltage inverted light-emitting diode chip and light-emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311430127.2A CN117457827A (en) | 2023-10-27 | 2023-10-27 | High-voltage inverted light-emitting diode chip and light-emitting device |
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| CN117457827A true CN117457827A (en) | 2024-01-26 |
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| CN202311430127.2A Pending CN117457827A (en) | 2023-10-27 | 2023-10-27 | High-voltage inverted light-emitting diode chip and light-emitting device |
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| Country | Link |
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| CN (1) | CN117457827A (en) |
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- 2023-10-27 CN CN202311430127.2A patent/CN117457827A/en active Pending
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