CN117457789A - CsPbI containing zero-dimensional hybrid material 3 Perovskite battery and preparation method thereof - Google Patents

CsPbI containing zero-dimensional hybrid material 3 Perovskite battery and preparation method thereof Download PDF

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CN117457789A
CN117457789A CN202311360240.8A CN202311360240A CN117457789A CN 117457789 A CN117457789 A CN 117457789A CN 202311360240 A CN202311360240 A CN 202311360240A CN 117457789 A CN117457789 A CN 117457789A
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perovskite
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sbcl
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刘治科
张娜
刘生忠
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Shaanxi Normal University
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Abstract

The invention discloses a CsPbI containing zero-dimensional hybrid material 3 Perovskite battery and preparation method thereof, and zero-dimensional hybrid material (ETP) prepared by using same 2 SbCl 5 Spin-coating between electron-transporting layer and perovskite absorption layer, or direct junction (ETP) 2 SbCl 5 Added to the perovskite precursor solution so that (ETP) 2 SbCl 5 Can act upon annealing of the perovskite absorber layer. (ETP) 2 SbCl 5 Is a zero-dimensional hybrid material which is solid at room temperature and starts to change into liquid state when the temperature is higher than 155 ℃, and in the annealing process of perovskite thin film, (ETP) 2 SbCl 5 Can better connect the electron transport layer and the perovskite light absorption layer, and can be used for preparing the TiO 2 And CsPbI 3 The ligament is formed between the layers, so that defects at the lower interface crystal boundary can be passivated, the lower interface lattice vacancy can be filled, invasion of oxygen and water in air can be prevented in the film forming process, and residual tensile strain in the 3D perovskite film is released, so that lattice mismatch is relieved.

Description

CsPbI containing zero-dimensional hybrid material 3 Perovskite battery and preparation method thereof
Technical Field
The invention belongs to the technical field of perovskite solar cell preparation, and particularly relates to a CsPbI containing zero-dimensional hybrid material 3 Perovskite batteries and methods of making the same.
Background
Although the solar photovoltaic industry starts late, the development is rapid, and particularly in 2013, under the driving of national and regional policies, the solar photovoltaic power generation shows explosive growth. In recent years, how to efficiently develop and utilize solar energy has become a focus of current attention. The solar cell is a device for directly converting light energy into electric energy through a photoelectric effect or a photochemical effect, wherein the perovskite solar cell is a novel solar cell which uses a perovskite type organic metal halide semiconductor as a light absorption material, and is a novel thin film cell with great industrial application prospect.
Cesium-based inorganic perovskite CsPbI 3 The composition exhibits excellent thermal stability and photostability because it contains no volatile organic components. At the same time, csPbI 3 Perovskite has a suitable band gap of approximately 1.7eV and is an ideal top-layer cell material for tandem solar cells. CsPbI has been known for the past few years 3 Remarkable progress has been made in (abbreviated PSCs), whose Photoelectric Conversion Efficiency (PCE) has exceeded 21%. Nevertheless, csPbI 3 The performance of (abbreviated PSCs) is still limited to a large extent by many interface-related problems, including interface non-radiative recombination due to severe defects, energy band mismatch between different functional layers, etc., such as the presence of a large number of iodine vacancies (V I ) This can lead to severe non-radiative recombination, and such defects can affect the efficiency and stability of the device. Interface defect management is therefore critical in inorganic PSCs.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide CsPbI containing zero-dimensional hybrid materials 3 Perovskite battery and preparation method thereof, in order to solve all-inorganic CsPbI prepared by the prior art 3 Perovskite solar cells suffer from the problems of more defects and poor stability.
In order to achieve the purpose, the invention is realized by adopting the following technical scheme:
CsPbI containing zero-dimensional hybrid material 3 A method of preparing a perovskite battery comprising the steps of:
preparing an electron transport layer on conductive glass, preparing a zero-dimensional hybrid material layer on the electron transport layer, spin-coating a perovskite precursor solution on the zero-dimensional hybrid material layer, annealing to obtain a perovskite absorption layer, preparing a hole transport layer on the perovskite absorption layer, and preparing a gold film on the hole transport layer;
the zero-dimensional hybrid material is (ETP) 2 SbCl 5 The perovskite absorption layer is CsPbI 3 。
The invention further improves that:
preferably, the preparation process of the zero-dimensional hybridization material layer is as follows: will (ETP) 2 SbCl 5 Dissolved in DMF to form (ETP) 2 SbCl 5 Solution, will (ETP) 2 SbCl 5 Spin-coating the solution on the electron transport layer; said (ETP) 2 SbCl 5 The concentration of the solution is 0.25 mg/mL-2 mg/mL.
Preferably, the (ETP) 2 SbCl 5 The spin-coating rotational speed of the solution is 4000-5000 rpm/s, and the spin-coating time is 20-40 s.
Preferably, it will (ETP) 2 SbCl 5 The solution is spin-coated on the electron transport layer and then heated at 160-200 ℃ for 5min.
CsPbI containing zero-dimensional hybrid material prepared by any one of the preparation methods 3 The perovskite battery comprises conductive glass, an electron transport layer, a zero-dimensional hybrid material layer, a perovskite absorption layer, a hole transport layer and a gold film which are sequentially stacked from bottom to top.
CsPbI containing zero-dimensional hybrid material 3 A method for producing a perovskite battery comprising the following stepsThe steps are as follows:
preparing an electron transport layer on conductive glass, spin-coating perovskite precursor solution on the electron transport layer, annealing to obtain a perovskite absorption layer, preparing a hole transport layer on the perovskite absorption layer, and preparing a gold film on the hole transport layer;
solute HPbI of the perovskite precursor solution 3 And CsI, perovskite precursor solution is added with zero-dimensional hybrid material (ETP) 2 SbCl 5 。
Preferably, the zero-dimensional hybrid material (ETP) in the perovskite precursor solution 2 SbCl 5 The concentration of (C) is 0.25 mg/mL-2 mg/mL.
Preferably, the perovskite precursor solution is spin-coated in two stages, wherein the spin-coating rotating speed in the first stage is 500-1000 rpm/s, and the spin-coating time is 5-20 s; the spin coating rotating speed of the second stage is 2000-3000 rpm/s, and the spin coating time is 30-50 s.
Preferably, the annealing temperature is 160-200 ℃ and the annealing time is 40-60 min.
CsPbI containing zero-dimensional hybrid material prepared by any one of the preparation methods 3 The perovskite battery comprises conductive glass, an electron transport layer, a perovskite absorption layer, a hole transport layer and a gold film which are stacked in sequence from bottom to top, wherein the perovskite absorption layer is doped with a zero-dimensional hybridization material (ETP) 2 SbCl 5 。
Compared with the prior art, the invention has the following beneficial effects:
the invention discloses a zero-dimensional hybrid material ((ETP) 2 SbCl 5 ) Optimizing CsPbI 3 Method for perovskite batteries, which method involves the use of zero-dimensional hybrid materials (ETP) 2 SbCl 5 Spin-coating between electron-transporting layer and perovskite absorption layer, or direct junction (ETP) 2 SbCl 5 Added to the perovskite precursor solution so that (ETP) 2 SbCl 5 Can act upon annealing of the perovskite absorber layer. (ETP) 2 SbCl 5 Is a zero-dimensional hybrid material which is solid at room temperature and starts to change into liquid state when the temperature is higher than 155 ℃, and in the annealing process of perovskite thin film, (ETP) 2 SbCl 5 Can better connect the electron transport layer and the perovskite light absorption layer, and can be used for preparing the TiO 2 And CsPbI 3 The ligament is formed between the layers, so that defects at the lower interface crystal boundary can be passivated, the lower interface lattice vacancy can be filled, invasion of oxygen and water in air can be prevented in the film forming process, and residual tensile strain in the 3D perovskite film is released, so that lattice mismatch is relieved. Thus, based on (ETP) 2 SbCl 5 Constructed full inorganic CsPbI 3 The photoelectric conversion efficiency of the perovskite battery is improved from 19.25% to 21.04%, and the unpackaged battery can still keep 89.34% of the initial efficiency after being placed in the air for approximately 1000 hours.
Drawings
FIG. 1 is a zero-dimensional hybrid material (ETP) with and without addition as described in example 2 of the present invention 2 SbCl 5 Performance contrast graph of inorganic perovskite solar cell of layer;
FIG. 2 is a zero-dimensional hybrid material (ETP) with and without addition as described in example 2 of the present invention 2 SbCl 5 GIXRD pattern of perovskite thin film of layer; wherein (a) is shown as not added (ETP) 2 SbCl 5 GIXRD pattern of perovskite thin film of layer; (b) The figure is an addition (ETP) 2 SbCl 5 Perovskite thin film GIXRD pattern of layer (0.5 mg/mL);
FIG. 3 is a zero-dimensional hybrid material (ETP) with and without addition as described in example 2 of the present invention 2 SbCl 5 XRD contrast pattern of perovskite thin film of layer;
FIG. 4 is a zero-dimensional hybrid material (ETP) with and without addition as described in example 2 of the present invention 2 SbCl 5 UPS map of perovskite solar cell of layer;
FIG. 5 is a zero-dimensional hybrid material (ETP) with and without addition as described in example 2 of the present invention 2 SbCl 5 Efficiency stability versus graph for the inorganic perovskite solar cell of the layer at 25% humidity.
FIG. 6 is a zero-dimensional hybrid material (ETP) as described in example 2 of the present invention 2 SbCl 5 Is a structural model of (a).
Detailed Description
On the one hand, the invention discloses a zero-dimensional hybrid material interface optimization CsPbI 3 The perovskite battery comprises conductive glass, an electron transport layer, a zero-dimensional hybrid material layer, a perovskite absorption layer, a hole transport layer and a gold film which are sequentially arranged from bottom to top; wherein the zero-dimensional hybrid material is (ETP) 2 SbCl 5 The material is fully called [ EtOPth ] 3 ] 2 [SbCl 5 ]Wherein EtOPh is 3 Is ethylhydroxyphenylphosphinium, which is disclosed in the article Selective Luminescence Response of aZero-Dimensional Hybrid Antimony (III) Halide to Solvent Molecules: size-Effect and Supramolecular interactions. Inorg. Chem.2021,60,17837-17845 [ EthPPh ] 3 ] 2 [SbCl 5 ]The structural formula is shown in figure 6.
On the one hand, the invention discloses a zero-dimensional hybrid material interface optimization CsPbI 3 A method of preparing a perovskite battery comprising the steps of:
step 1, cleaning a conductive glass substrate;
the conductive glass substrate 1 is fluorine doped tin oxide (FTO) conductive glass, ultrasonic cleaning is carried out for 10-30 min in ultrapure water added with glass cleaning agent, the ultrapure water is replaced every 30min, residual cleaning agent on the glass is cleaned, and then the conductive glass is dried by a nitrogen gun.
Step 2, preparing an electron transport layer;
preparing an electron transport layer on a conductive glass substrate by a water bath deposition method, wherein the electron transport layer is made of TiO 2 The deposition time is 40 min-1 h. FTO glass was treated with UV ozone for 15min, and 4.5mL TiCl was added 4 Drop on 200mL of ice, after the ice melted to thumb size, place in 70 ℃ oven for deposition. Prepared TiO 2 The thickness of the electron transport layer is 40-50nm.
Step 3, preparing a zero-dimensional hybrid material (ETP) 2 SbCl 5 A layer;
will (ETP) 2 SbCl 5 Dissolving in DMF to form transparent solution, zero-dimensional hybrid material (ETP) 2 SbCl 5 The concentration of (C) is 0.25 mg/mL-to-ultrahigh2mg/mL, will (ETP) 2 SbCl 5 The solution is spin-coated on the surface of the electron transport layer, the rotating speed is 4000-5000 rpm/s, and the spin-coating time is 20-40 s.
Step 4, preparing an all-inorganic perovskite light absorption layer;
(1) Preparing an all-inorganic perovskite precursor liquid; HPbI 3 CsI is dissolved in a mixed solvent of DMF and DMSO (8.5/1.5, V/V) in a molar ratio of 0.745:0.825 to prepare a perovskite precursor solution;
(2) Spin coating of an all-inorganic perovskite precursor solution onto a zero-dimensional hybrid material (ETP) 2 SbCl 5 Layer surface spin coating is two stages: the rotating speed of the first stage is 500-1000 rpm/s, and the spin coating time is 5-20 s; the second stage rotating speed is 2000-3000 rpm/s, and the spin coating time is 30-50 s; annealing treatment after spin coating; the annealing temperature is 160-200 ℃, and the annealing time is 40-60 min, so as to obtain the perovskite light absorbing layer.
Step 5, preparing a hole transport layer;
preparing a hole transport layer on the basis of the film prepared in the step 4 by a spin coating method, wherein the spin coating rotating speed is 3000-5000 rpm/s, and the spin coating time is 20-40 s; the hole transport layer is made of a Spiro-OMeTAD solution.
Step 6, evaporating an electrode;
evaporating gold electrode with thickness of 80-100 nm on the hole transport layer prepared in step 5, and the area of the battery is 0.09cm 2 And obtaining the perovskite solar cell.
In some embodiments of the present invention, in step 3 above, a zero-dimensional hybrid material (ETP) is prepared 2 SbCl 5 After the layer, a heating operation is performed at 160-200deg.C for 5min. The electron transport layer and the perovskite layer are better connected by re-annealing the perovskite precursor without annealing, so that the effect of the device is better.
The invention also discloses a zero-dimensional hybrid material phase-optimized CsPbI 3 The preparation method of the perovskite battery is characterized in that the perovskite precursor solution is directly added into the perovskite battery, namely the process of the step 3 and the step 4 in the previous preparation method is as follows:
step 3, hydrogen lead iodine (HPbI) 3 ) Cesium iodide (CsI) (n: n=0.745: 0.825 Sum (ETP) 2 SbCl 5 CsPbI at a concentration of 0.745M was prepared by dissolving in a mixed solvent of DMF and DMSO (V/V=8.5/1.5) 3 Perovskite precursor solution, (ETP) 2 SbCl 5 The concentration of the perovskite precursor solution is 0.25 mg/mL-2 mg/mL, and then the perovskite precursor solution is stirred for 24 hours for standby.
The prepared inorganic CsPbI 3 Spin-coating a perovskite precursor solution on the surface of the electron transport layer to prepare a perovskite absorption layer; the spin coating process is divided into two stages: the rotating speed of the first section is 1000rpm/s, and the spin coating time is 10s; the second stage rotating speed is 3000rpm/s, and the spin coating time is 40s; the annealing process is to anneal for 50min at 170 ℃.
The rest of the non-related steps are the same as the preparation process.
In the above process, the process will be (ETP) 2 SbCl 5 After spin coating the solution on the surface of the electron transport layer, directly spin coating a perovskite absorption layer on the solution without annealing, and then annealing to prepare the perovskite battery with optimal performance.
The battery structure prepared by the method comprises (1), conductive glass (2), an electron transport layer (3), a zero-dimensional hybrid material layer, (4), a perovskite absorption layer (5), a hole transport layer (6) and a metal electrode which are sequentially stacked from bottom to top.
Comparative example
Step 1, ultrasonically cleaning conductive glass in ultrapure water added with glass cleaning agent for 10-30 min, replacing the ultrapure water every 30min, cleaning residual cleaning agent on the glass, and then drying the conductive glass by a nitrogen gun.
Step 2, adopting a hydrothermal deposition method, depositing for 55min in a 70 ℃ oven, and depositing a layer of TiO on the surface of the cleaned FTO 2 As an electron transport layer. FTO glass was treated with UV ozone for 15min, and 4.5mL TiCl was added 4 Drop on 200mL of ice, after the ice melted to thumb size, place in 70 ℃ oven for deposition. Prepared TiO 2 The thickness of the electron transport layer is 40-50nm.
Step 3, the prepared inorganic CsPbI 3 Spin-coating a perovskite precursor solution on the electron transport layer to prepare a perovskite absorption layer; the spin coating process is divided into two stages: the rotating speed of the first section is 1000rpm/s, and the spin coating time is 10s; the second stage rotating speed is 3000rpm/s, and the spin coating time is 40s; the annealing process is to anneal for 50min at 170 ℃.
Step 4, spin-coating a hole transport layer Spiro-OMeTAD on the perovskite layer by a spin coating method, and dissolving Spiro-OMeTAD powder (90 mg), lithium salt (22 mu L) and t-BP (36 mu L) in 1mL of chlorobenzene to obtain Spiro-OMeTAD solution, wherein the concentration of the Spiro-OMeTAD solution is 90mg/mL; the spin coating rotational speed is 5000rpm/s, the spin coating time is 40s, and the hole transport layer is prepared.
Step 5, evaporating an 80nm thick gold film on the hole transport layer Spiro-OMeTAD, wherein the cell area is 0.09cm 2 And obtaining the perovskite solar cell.
Example 1
Step 1, ultrasonically cleaning conductive glass in ultrapure water added with glass cleaning agent for 20min, replacing the ultrapure water every 30min, cleaning the residual cleaning agent on the glass, and then drying the conductive glass by a nitrogen gun.
Step 2, adopting a hydrothermal heat preservation deposition method, depositing for 55min in a 70 ℃ oven, and depositing a layer of TiO on the surface of the cleaned FTO 2 An electron transport layer is formed. FTO glass was treated with UV ozone for 15min, and 4.5mL TiCl was added 4 Drop on 200mL of ice, after the ice melted to thumb size, place in 70 ℃ oven for deposition. Prepared TiO 2 The thickness of the electron transport layer is 40-50nm.
Step 3, will (ETP) 2 SbCl 5 (0.25 mg) was dissolved in 1mL of DMF to prepare a solution, which was spin-coated on TiO by spin-coating 2 The rotation speed on the electron transport layer is 5000rpm/s, and the spin coating time is 40s.
Step 4, hydrogen lead iodine (HPbI) 3 ) And cesium iodide (CsI) (n: n=0.745: 0.825 CsPbI at a concentration of 0.745M was prepared by dissolving in a mixed solvent of DMF and DMSO (V/v=8.5/1.5) 3 And (3) the perovskite precursor solution, and stirring the perovskite precursor solution for 24 hours for standby.
Step 5, the prepared inorganic CsPbI 3 Calcium titaniumSpin coating of mineral precursor solution on zero-dimensional hybrid material (ETP) 2 SbCl 5 Preparing a perovskite light absorption layer on the surface of the layer; the spin coating process is divided into two stages: the rotating speed of the first section is 1000rpm/s, and the spin coating time is 10s; the second stage rotating speed is 3000rpm/s, and the spin coating time is 40s; the annealing process is to anneal for 50min at 170 ℃.
Step 6, spin-coating a hole transport layer Spiro-OMeTAD on the perovskite layer by a spin coating method, and dissolving Spiro-OMeTAD powder (90 mg), lithium salt (22 mu L) and t-BP (36 mu L) in 1mL of chlorobenzene to obtain Spiro-OMeTAD solution, wherein the concentration of the Spiro-OMeTAD solution is 90mg/mL; the spin coating rotational speed is 5000rpm/s, the spin coating time is 40s, and the hole transport layer is prepared.
Step 7, evaporating an 80nm thick gold film on the hole transport layer Spiro-OMeTAD, wherein the cell area is 0.09cm 2 And obtaining the perovskite solar cell.
Example 2
In this example, (ETP) 2 SbCl 5 The concentration of (C) was 0.5mg/mL, and the other steps were the same as in example 1. In this example, the efficiency of the inorganic perovskite solar cell was 21.04%.
As shown in FIG. 1, a zero-dimensional hybrid material (ETP) was added in this example 2 SbCl 5 The cells of the layer and the comparative example were not added with zero-dimensional hybrid material (ETP) 2 SbCl 5 The cell contrast of the layer, the open circuit voltage and the filling factor are improved, and the photoelectric conversion efficiency of the cell is increased from 19.25% to 21.04%.
As shown in FIG. 2, a zero-dimensional hybrid material (ETP) was added in this example 2 SbCl 5 The perovskite thin film of the layer and the comparative example are not added with zero-dimensional hybrid material (ETP) 2 SbCl 5 GIXRD pattern contrast of perovskite thin films of layers, based on (ETP) 2 SbCl 5 Peak shifts of interface optimized films gradually decrease, indicating (ETP) 2 SbCl 5 And the residual stress of the film lattice of the lower interface is eliminated, and the film quality is improved.
As shown in FIG. 3, a zero-dimensional hybrid material (ETP) was added in this example 2 SbCl 5 The perovskite thin film of the layer and the comparative example are not added with zero-dimensional hybrid material (ETP) 2 SbCl 5 Perovskite thin film XRD contrast pattern of the layer. From the figure it can be seen that the addition of zero-dimensional hybrid material (ETP) 2 SbCl 5 Perovskite thin film of layer has enhanced crystallinity, but (ETP) 2 SbCl 5 The addition of the layer did not alter the lattice structure of the perovskite thin film.
As shown in FIG. 4, a zero-dimensional hybrid material (ETP) was added in this example 2 SbCl 5 The perovskite thin film of the layer and the comparative example are not added with zero-dimensional hybrid material (ETP) 2 SbCl 5 Compared with the perovskite film UPS graph of the layer, the perovskite film added with the zero-dimensional hybrid material layer has the advantages that the conduction band and the valence band are greatly improved, the energy level of the perovskite film is more matched with that of the hole transport layer, and the perovskite film is more beneficial to the transport of carriers.
As shown in FIG. 5, a zero-dimensional hybrid material (ETP) was added in this example 2 SbCl 5 Devices of layers and comparative examples were not added with zero-dimensional hybrid materials (ETP) 2 SbCl 5 Device stability comparison of layers, it can be seen that zero-dimensional hybrid material (ETP) was added 2 SbCl 5 The layered device can still maintain 89.34% efficiency and greatly enhance stability under storage for approximately 1000 hours and 25% humidity.
Example 3
In this example, (ETP) 2 SbCl 5 The concentration of (C) was 1mg/mL, and the other steps were the same as in examples 1 and 2. In this example, the efficiency of the inorganic perovskite solar cell was 20.91%.
Example 4
In this example, (ETP) 2 SbCl 5 The concentration of (2) was 2mg/mL, and the other steps were the same as in examples 1, 2 and 3. In this example, the efficiency of the inorganic perovskite solar cell was 18.38%.
Example 5
Step 1, ultrasonically cleaning conductive glass in ultrapure water added with glass cleaning agent for 10-30 min, replacing the ultrapure water every 30min, cleaning residual cleaning agent on the glass, and then drying the conductive glass by a nitrogen gun.
Step 2, adopting a hydrothermal heat preservation deposition method and a 70 ℃ ovenDepositing for 55min, and depositing a layer of TiO on the surface of the cleaned FTO 2 An electron transport layer is formed. FTO glass was treated with UV ozone for 15min, and 4.5mL TiCl was added 4 Drop on 200mL of ice, after the ice melted to thumb size, place in 70 ℃ oven for deposition. Prepared TiO 2 The thickness of the electron transport layer is 40-50nm.
Step 3, will (ETP) 2 SbCl 5 (0.5 mg) was dissolved in 1mL of DMF to prepare a solution, which was spin-coated on TiO by spin-coating 2 And (3) on the electron transport layer, the rotating speed is 5000rpm/s, the spin coating time is 40s, and after the spin coating is finished, the film is placed on a 160 ℃ hot table and heated for 5min.
Step 4, hydrogen lead iodine (HPbI) 3 ) And cesium iodide (CsI) (n: n=0.745: 0.825 CsPbI at a concentration of 0.745M was prepared by dissolving in a mixed solvent of DMF and DMSO (V/v=8.5/1.5) 3 And (3) the perovskite precursor solution, and stirring the perovskite precursor solution for 24 hours for standby.
Step 5, the prepared inorganic CsPbI 3 Perovskite precursor solution spin-coating on zero-dimensional hybrid materials (ETP) 2 SbCl 5 Preparing a perovskite absorption layer on the surface of the layer; the spin coating process is divided into two stages: the rotating speed of the first section is 1000rpm/s, and the spin coating time is 10s; the second stage rotating speed is 3000rpm/s, and the spin coating time is 40s; the annealing process is to anneal for 50min at 170 ℃.
Step 6, spin-coating a hole transport layer Spiro-OMeTAD on the perovskite layer by a spin coating method, and dissolving Spiro-OMeTAD powder (90 mg), lithium salt (22 mu L) and t-BP (36 mu L) in 1mL of chlorobenzene to obtain Spiro-OMeTAD solution, wherein the concentration of the Spiro-OMeTAD solution is 90mg/mL; the spin coating rotational speed is 5000rpm/s, the spin coating time is 40s, and the hole transport layer is prepared.
Step 7, evaporating an 80nm thick gold film on the hole transport layer Spiro-OMeTAD, wherein the cell area is 0.09cm 2 And obtaining the perovskite solar cell.
Example 6
Step 1, ultrasonically cleaning conductive glass in ultrapure water added with glass cleaning agent for 10-30 min, replacing the ultrapure water every 30min, cleaning residual cleaning agent on the glass, and then drying the conductive glass by a nitrogen gun.
Step 2, adopting a hydrothermal heat preservation deposition method, depositing for 55min in a 70 ℃ oven, and depositing a layer of TiO on the surface of the cleaned FTO 2 An electron transport layer is formed. FTO glass was treated with UV ozone for 15min, and 4.5mL TiCl was added 4 Drop on 200mL of ice, after the ice melted to thumb size, place in 70 ℃ oven for deposition. Prepared TiO 2 The thickness of the electron transport layer is 40-50nm.
Step 3, will (ETP) 2 SbCl 5 (0.5 mg) was dissolved in 1mL of DMF to prepare a solution, which was spin-coated on TiO by spin-coating 2 And on the electron transport layer, the rotating speed is 4000rpm/s, the spin coating time is 40s, and after the spin coating is finished, the film is placed on a 180 ℃ hot table and heated for 5min.
Step 4, hydrogen lead iodine (HPbI) 3 ) And cesium iodide (CsI) (n: n=0.745: 0.825 CsPbI at a concentration of 0.745M was prepared by dissolving in a mixed solvent of DMF and DMSO (V/v=8.5/1.5) 3 And (3) the perovskite precursor solution, and stirring the perovskite precursor solution for 24 hours for standby.
Step 5, the prepared inorganic CsPbI 3 Perovskite precursor solution spin-coating on zero-dimensional hybrid materials (ETP) 2 SbCl 5 Preparing a perovskite absorption layer on the surface of the layer; the spin coating process is divided into two stages: the rotating speed of the first section is 1000rpm/s, and the spin coating time is 10s; the second stage rotating speed is 3000rpm/s, and the spin coating time is 40s; the annealing process is to anneal for 50min at 170 ℃.
Step 6, spin-coating a hole transport layer Spiro-OMeTAD on the perovskite layer by a spin coating method, and dissolving Spiro-OMeTAD powder (90 mg), lithium salt (22 mu L) and t-BP (36 mu L) in 1mL of chlorobenzene to obtain Spiro-OMeTAD solution, wherein the concentration of the Spiro-OMeTAD solution is 90mg/mL; the spin coating rotational speed is 5000rpm/s, the spin coating time is 40s, and the hole transport layer is prepared.
Step 7, evaporating an 80nm thick gold film on the hole transport layer Spiro-OMeTAD, wherein the cell area is 0.09cm 2 And obtaining the perovskite solar cell.
Example 7
Step 1, ultrasonically cleaning conductive glass in ultrapure water added with glass cleaning agent for 10-30 min, replacing the ultrapure water every 30min, cleaning residual cleaning agent on the glass, and then drying the conductive glass by a nitrogen gun.
Step 2, adopting a hydrothermal heat preservation deposition method, depositing for 55min in a 70 ℃ oven, and depositing a layer of TiO on the surface of the cleaned FTO 2 An electron transport layer is formed. FTO glass was treated with UV ozone for 15min, and 4.5mL TiCl was added 4 Drop on 200mL of ice, after the ice melted to thumb size, place in 70 ℃ oven for deposition. Prepared TiO 2 The thickness of the electron transport layer is 40-50nm.
Step 3, will (ETP) 2 SbCl 5 (0.5 mg) was dissolved in 1mL of DMF to prepare a solution, which was spin-coated on TiO by spin-coating 2 And on the electron transport layer, the rotating speed is 4000rpm/s, the spin coating time is 40s, and after the spin coating is finished, the film is placed on a 200 ℃ hot table and heated for 5min.
Step 4, hydrogen lead iodine (HPbI) 3 ) And cesium iodide (CsI) (n: n=0.745: 0.825 CsPbI at a concentration of 0.745M was prepared by dissolving in a mixed solvent of DMF and DMSO (V/v=8.5/1.5) 3 And (3) the perovskite precursor solution, and stirring the perovskite precursor solution for 24 hours for standby.
Step 5, the prepared inorganic CsPbI 3 Perovskite precursor solution spin-coating on zero-dimensional hybrid materials (ETP) 2 SbCl 5 Preparing a perovskite absorption layer on the surface of the layer; the spin coating process is divided into two stages: the rotating speed of the first section is 1000rpm/s, and the spin coating time is 10s; the second stage rotating speed is 3000rpm/s, and the spin coating time is 40s; the annealing process is to anneal for 50min at 170 ℃.
Step 6, spin-coating a hole transport layer Spiro-OMeTAD on the perovskite layer by a spin coating method, and dissolving Spiro-OMeTAD powder (90 mg), lithium salt (22 mu L) and t-BP (36 mu L) in 1mL of chlorobenzene to obtain Spiro-OMeTAD solution, wherein the concentration of the Spiro-OMeTAD solution is 90mg/mL; the spin coating rotational speed is 5000rpm/s, the spin coating time is 40s, and the hole transport layer is prepared.
Step 7, evaporating an 80nm thick gold film on the hole transport layer Spiro-OMeTAD, wherein the cell area is 0.09cm 2 And obtaining the perovskite solar cell.
Example 8
Step 1, ultrasonically cleaning conductive glass in ultrapure water added with glass cleaning agent for 10-30 min, replacing the ultrapure water every 30min, cleaning residual cleaning agent on the glass, and then drying the conductive glass by a nitrogen gun.
Step 2, adopting a hydrothermal heat preservation deposition method, depositing for 55min in a 70 ℃ oven, and depositing a layer of TiO on the surface of the cleaned FTO 2 An electron transport layer is formed. FTO glass was treated with UV ozone for 15min, and 4.5mL TiCl was added 4 Drop on 200mL of ice, after the ice melted to thumb size, place in 70 ℃ oven for deposition. Prepared TiO 2 The thickness of the electron transport layer is 40-50nm.
Step 3, hydrogen lead iodine (HPbI) 3 ) Cesium iodide (CsI) (n: n=0.745: 0.825 Sum (ETP) 2 SbCl 5 (0.5 mg) CsPbI was prepared at a concentration of 0.745M in a mixed solvent of DMF and DMSO (V/V=8.5/1.5) 3 And (3) the perovskite precursor solution, and stirring the perovskite precursor solution for 24 hours for standby.
Step 4, the prepared inorganic CsPbI 3 Spin-coating a perovskite precursor solution on the surface of the electron transport layer to prepare a perovskite absorption layer; the spin coating process is divided into two stages: the rotating speed of the first section is 1000rpm/s, and the spin coating time is 10s; the second stage rotating speed is 3000rpm/s, and the spin coating time is 40s; the annealing process is to anneal for 50min at 170 ℃.
Step 5, spin-coating a hole transport layer Spiro-OMeTAD on the perovskite layer by a spin coating method, and dissolving Spiro-OMeTAD powder (90 mg), lithium salt (22 mu L) and t-BP (36 mu L) in 1mL of chlorobenzene to obtain Spiro-OMeTAD solution, wherein the concentration of the Spiro-OMeTAD solution is 90mg/mL; the spin coating rotational speed is 5000rpm/s, the spin coating time is 40s, and the hole transport layer is prepared.
Step 6, evaporating an 80nm thick gold film on the hole transport layer Spiro-OMeTAD, wherein the cell area is 0.09cm 2 And obtaining the perovskite solar cell.
Example 9
Step 1, ultrasonically cleaning conductive glass in ultrapure water added with glass cleaning agent for 10-30 min, replacing the ultrapure water every 30min, cleaning residual cleaning agent on the glass, and then drying the conductive glass by a nitrogen gun.
Step 2, adopting a hydrothermal heat preservation deposition method, depositing for 55min in a 70 ℃ oven, and depositing a layer of TiO on the surface of the cleaned FTO 2 An electron transport layer is formed. FTO glass was treated with UV ozone for 15min, and 4.5mL TiCl was added 4 Drop on 200mL of ice, after the ice melted to thumb size, place in 70 ℃ oven for deposition. Prepared TiO 2 The thickness of the electron transport layer is 40-50nm.
Step 3, hydrogen lead iodine (HPbI) 3 ) Cesium iodide (CsI) (n: n=0.745: 0.825 Sum (ETP) 2 SbCl 5 (0.25 mg) CsPbI was prepared at a concentration of 0.745M by dissolving in a mixed solvent of DMF and DMSO (V/V=8.5/1.5), respectively 3 And (3) the perovskite precursor solution, and stirring the perovskite precursor solution for 24 hours for standby.
Step 4, the prepared inorganic CsPbI 3 Spin-coating a perovskite precursor solution on the surface of the electron transport layer to prepare a perovskite absorption layer; the spin coating process is divided into two stages: the rotating speed of the first section is 1000rpm/s, and the spin coating time is 10s; the second stage rotating speed is 3000rpm/s, and the spin coating time is 40s; the annealing process is to anneal for 50min at 170 ℃.
Step 5, spin-coating a hole transport layer Spiro-OMeTAD on the perovskite layer by a spin coating method, and dissolving Spiro-OMeTAD powder (90 mg), lithium salt (22 mu L) and t-BP (36 mu L) in 1mL of chlorobenzene to obtain Spiro-OMeTAD solution, wherein the concentration of the Spiro-OMeTAD solution is 90mg/mL; the spin coating rotational speed is 5000rpm/s, the spin coating time is 40s, and the hole transport layer is prepared.
Step 6, evaporating an 80nm thick gold film on the hole transport layer Spiro-OMeTAD, wherein the cell area is 0.09cm 2 And obtaining the perovskite solar cell.
Example 10
In this example, the perovskite precursor solution (ETP) 2 SbCl 5 The amount of (2) added was 1mg, and the rest of the procedure was the same as in example 9.
Example 11
In this example, the perovskite precursor solution (ETP) 2 SbCl 5 The amount of (2) added was 2mg, and the other steps and parameters were the same as in example 9.
Example 12
In the embodiment, the spin coating and annealing parameters of the perovskite precursor solution are that the rotating speed of the first section is 500rpm/s, and the spin coating time is 20s; the second stage rotating speed is 2000rpm/s, and the spin coating time is 50s; the annealing process was a 160 ℃ hot stage anneal for 60 minutes, the remaining steps and parameters were the same as in example 1.
Example 13
In the embodiment, the spin coating and annealing parameters of the perovskite precursor solution are that the rotating speed of the first section is 800rpm/s, and the spin coating time is 10s; the second stage rotation speed is 2500rpm/s, and the spin coating time is 40s; the annealing process was a thermal station anneal at 180 ℃ for 50 minutes, the remaining steps and parameters were the same as in example 1.
Example 14
In the embodiment, the spin coating and annealing parameters of the perovskite precursor solution are that the rotating speed of the first section is 1000rpm/s, and the spin coating time is 5s; the second stage rotating speed is 2000rpm/s, and the spin coating time is 50s; the annealing process was a thermal station anneal at 200 ℃ for 40 minutes, the remaining steps and parameters were the same as in example 1.
The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, alternatives, and improvements that fall within the spirit and scope of the invention.

Claims (10)

1. CsPbI containing zero-dimensional hybrid material 3 The preparation method of the perovskite battery is characterized by comprising the following steps of:
preparing an electron transport layer on conductive glass, preparing a zero-dimensional hybrid material layer on the electron transport layer, spin-coating a perovskite precursor solution on the zero-dimensional hybrid material layer, annealing to obtain a perovskite absorption layer, preparing a hole transport layer on the perovskite absorption layer, and preparing a gold film on the hole transport layer;
the zero-dimensional hybrid material is (ETP) 2 SbCl 5 The perovskite absorption layer is CsPbI 3 。
2. A CsPbI comprising zero-dimensional hybrid material according to claim 1 3 The preparation method of the perovskite battery is characterized in that the preparation process of the zero-dimensional hybrid material layer is as follows: will (ETP) 2 SbCl 5 Dissolved in DMF to form (ETP) 2 SbCl 5 Solution, will (ETP) 2 SbCl 5 Spin-coating the solution on the electron transport layer; said (ETP) 2 SbCl 5 The concentration of the solution is 0.25 mg/mL-2 mg/mL.
3. A CsPbI comprising zero-dimensional hybrid material according to claim 2 3 A method for producing a perovskite battery, characterized in that the (ETP) 2 SbCl 5 The spin-coating rotational speed of the solution is 4000-5000 rpm/s, and the spin-coating time is 20-40 s.
4. A CsPbI comprising zero-dimensional hybrid material according to claim 2 3 A method for producing a perovskite battery, characterized in that the perovskite battery (ETP) 2 SbCl 5 The solution is spin-coated on the electron transport layer and then heated at 160-200 ℃ for 5min.
5. A CsPbI comprising zero-dimensional hybrid material made by the method of any one of claims 1-4 3 The perovskite battery is characterized by comprising conductive glass, an electron transport layer, a zero-dimensional hybrid material layer, a perovskite absorption layer, a hole transport layer and a gold film which are sequentially stacked from bottom to top.
6. CsPbI containing zero-dimensional hybrid material 3 The preparation method of the perovskite battery is characterized by comprising the following steps of:
preparing an electron transport layer on conductive glass, spin-coating perovskite precursor solution on the electron transport layer, annealing to obtain a perovskite absorption layer, preparing a hole transport layer on the perovskite absorption layer, and preparing a gold film on the hole transport layer;
solute HPbI of the perovskite precursor solution 3 And CsI, perovskite precursor solution is added with zero-dimensional hybrid material (ETP) 2 SbCl 5 。
7. A CsPbI comprising zero-dimensional hybrid material according to claim 6 3 A preparation method of a perovskite battery is characterized in that a zero-dimensional hybrid material (ETP) in a perovskite precursor solution 2 SbCl 5 The concentration of (C) is 0.25 mg/mL-2 mg/mL.
8. A CsPbI comprising zero-dimensional hybrid material according to claim 1 or 6 3 The preparation method of the perovskite battery is characterized in that the perovskite precursor solution is divided into two stages of spin coating, the spin coating rotating speed of the first stage is 500-1000 rpm/s, and the spin coating time is 5-20 s; the spin coating rotating speed of the second stage is 2000-3000 rpm/s, and the spin coating time is 30-50 s.
9. A CsPbI comprising zero-dimensional hybrid material according to claim 1 or 6 3 The preparation method of the perovskite battery is characterized in that the annealing temperature is 160-200 ℃ and the annealing time is 40-60 min.
10. A CsPbI comprising zero-dimensional hybrid material made by the method of any one of claims 7-9 3 The perovskite battery is characterized by comprising conductive glass, an electron transport layer, a perovskite absorption layer, a hole transport layer and a gold film which are sequentially stacked from bottom to top, wherein the perovskite absorption layer is doped with a zero-dimensional hybridization material (ETP) 2 SbCl 5 。
CN202311360240.8A 2023-10-19 2023-10-19 CsPbI containing zero-dimensional hybrid material 3 Perovskite battery and preparation method thereof Pending CN117457789A (en)

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