CN113972323A - Sodium thiocyanate-doped efficient and stable perovskite solar cell and preparation method thereof - Google Patents

Sodium thiocyanate-doped efficient and stable perovskite solar cell and preparation method thereof Download PDF

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CN113972323A
CN113972323A CN202111179594.3A CN202111179594A CN113972323A CN 113972323 A CN113972323 A CN 113972323A CN 202111179594 A CN202111179594 A CN 202111179594A CN 113972323 A CN113972323 A CN 113972323A
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perovskite
sodium thiocyanate
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王吉林
唐锐斌
姚迪圣
龙飞
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Guilin University of Technology
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Abstract

The invention discloses a sodium thiocyanate-doped efficient stable perovskite solar cell which comprises (1) an FTO conductive glass layer, (2) a dense tin dioxide layer, (3) a perovskite absorption layer, (4) a hole transmission layer and (5) a metal electrode from bottom to top; when the perovskite absorption layer is prepared, the method of adding sodium thiocyanate into the perovskite precursor solution is adopted, and the perovskite thin film with the double actions of anions and cations can obviously reduce the defect state density and inhibit the formation of halide gap defects, so that the service life of carriers is prolonged, the photoelectric conversion efficiency and the stability are obviously improved, and the method is favorable for industrial application of devices.

Description

Sodium thiocyanate-doped efficient and stable perovskite solar cell and preparation method thereof
Technical Field
The invention relates to the field of perovskite solar cells, in particular to a sodium thiocyanate-doped efficient and stable perovskite solar cell and a preparation method thereof, and has important significance for preparing the efficient and stable perovskite solar cell.
Background
Currently, in the field of solar cells, perovskite solar cells have high photoelectric conversion efficiency and low preparation cost, and thus are the research hotspots in the current photovoltaic field. The organic metal halide perovskite material is used as a light absorption layer in the perovskite battery and has the advantages of high light absorption coefficient, long carrier diffusion distance, bipolar charge transmission property, low exciton confinement energy and the like. However, the organic metal halide perovskite material is sensitive to the preparation environment, and has the problems of poor crystalline quality, more defects and unstable phase formation, thereby restricting the embodiment of the advantages of the perovskite material. The preparation of the high-quality perovskite thin film makes the efficiency and stability of the perovskite battery break through, and is the key point for developing the perovskite battery.
The perovskite is doped with proper amount of 1, 8-diiodooctane, benzodithiophene small molecular organic matter (DR3TBDTT), sodium iodide (NaI), thiocyanic acid Methylamine (MASCN) and the like, so that the crystallization kinetics of the perovskite can be changed, the growth of crystal grains is promoted, iodine gaps and lead vacancy defects are passivated, and the internal defect state density is reduced, so that the efficiency of the battery is improved, but the stability problem is still not solved.
Disclosure of Invention
The invention aims to solve the technical problem of providing a sodium thiocyanate-doped perovskite solar cell and a preparation method thereof aiming at the defects in the prior art, which can effectively passivate the surface defects of a perovskite thin film, reduce the defect state density and improve the efficiency and stability of the perovskite solar cell.
The technical scheme adopted by the invention for solving the problems is as follows:
a high-efficiency stable perovskite solar cell doped with sodium thiocyanate has a structure shown in figure 1, and comprises (1) a glass substrate FTO conductive glass layer, (2) a dense tin dioxide layer, (3) a perovskite absorption layer, (4) a hole transport layer and (5) a metal electrode from bottom to top respectively; the perovskite absorption layer is sodium thiocyanate-doped iodolead methylamine perovskite, and the doping amount of the sodium thiocyanate is 0-1 wt% and is not 0.
According to the scheme, the sheet resistance of the FTO conductive glass layer is 14-20 omega, the light transmittance is 80-90%, and the thickness of the FTO conductive glass is 2.2 mm.
According to the scheme, the thickness of the dense tin dioxide layer is 30-50 nm.
According to the scheme, the thickness of the perovskite light absorption layer is 400-500 nm.
According to the scheme, the hole transport layer is 2,2',7,7' -tetra [ N, N-di (4-methoxyphenyl) amino ] -9,9' -spirobifluorene (Spiro-OMeTAD) and has the thickness of 100-200 nm.
According to the scheme, the metal electrode is gold, and the thickness of the metal electrode is 100-150 nm. Only the gold electrode level bandgaps are matched.
The preparation method of the sodium thiocyanate-doped efficient stable perovskite solar cell comprises the following steps: the preparation method comprises the steps of spin-coating tin oxide water dispersion on clean conductive glass, heating to prepare a compact tin dioxide layer, then preparing sodium thiocyanate-doped lead-iodine methylamine perovskite on the tin dioxide layer by adopting an anti-solvent method to serve as a perovskite absorption layer, and finally sequentially preparing a hole transport layer and a metal electrode layer on the perovskite absorption layer, so that the sodium thiocyanate-doped high-efficiency stable perovskite solar cell is obtained. Further, the hole transport layer is obtained by spin-coating a Spiro-OMeTAD chlorobenzene solution containing lithium bistrifluoromethanesulfonylimide (Li-TFSI) and 4-tert-butylpyridine (tBP) additive on the perovskite absorption layer and then oxidizing; the metal electrode layer is formed by evaporating metal on the surface of the hole transport layer.
Further, the method for preparing sodium thiocyanate-doped iodolead methylamine perovskite by an anti-solvent method comprises the following steps:
(1) dissolving sodium thiocyanate powder in dimethylformamide to obtain a sodium thiocyanate solution, wherein the concentration of the sodium thiocyanate solution is 0.8-1 mol/mL; dissolving lead iodide and methylamine iodine in a molar ratio of 1:1 in a mixed solvent of dimethyl formamide and dimethyl sulfoxide (the mixed volume ratio of dimethyl formamide and dimethyl sulfoxide is preferably 9:1-4:1) to ensure that the total concentration of the lead iodide and methylamine iodine is 1-1.8mol/mL, and stirring to obtain a clear and transparent mixed solution of lead iodide and methylamine iodine;
(2) adding a sodium thiocyanate solution into a mixed solution of lead iodide and methylamine iodide to obtain a sodium thiocyanate-doped perovskite precursor solution, wherein the total concentration of lead iodide and methylamine iodide is 1-1.8mol/L, and the concentration of sodium thiocyanate is 3-10 mmol/L;
(3) and spin-coating the perovskite precursor solution on the tin dioxide layer in a glove box, dripping chlorobenzene in the spin-coating process, and heating on a hot plate at the temperature of 110 ℃ for 5-10min after the spin-coating is finished to obtain sodium thiocyanate-doped iodolead methylamine perovskite, namely the perovskite absorption layer. Wherein the ratio of the dropwise addition volume of the chlorobenzene to the total volume of the perovskite precursor solution is 0.8-1.2.
In the step (3), in order to ensure that the obtained sodium thiocyanate-doped iodolead methylamine perovskite thin film has good film forming quality and higher photoelectric conversion efficiency, the spin coating speed and time are preferably 4000rpm and 30s respectively. In order to maintain the stability of the perovskite mesophase, chlorobenzene is quickly dropped when the spin coating time is 6-8s, and the mixture is heated on a hot plate at the temperature of 100-110 ℃ for 5-10min after the spin coating.
Compared with the prior art, the invention has the beneficial effects that:
firstly, compared with the traditional perovskite battery preparation method, the method has the advantages that the sodium thiocyanate is doped into the perovskite precursor solution for the first time, then the perovskite precursor solution is spin-coated by using a spin-coating method to obtain the perovskite light absorption layer doped with the sodium thiocyanate, the surface defects of the perovskite film are effectively passivated, the defect state density is reduced, and the efficiency and the stability of the perovskite battery are improved. Wherein, sodium ions in the sodium thiocyanate can fill internal defect states to inhibit ion migration; thiocyanate ions can be combined with lead iodide ions, so that crystallization kinetics are changed, growth of perovskite crystal grains is promoted, and crystallization quality is improved. Therefore, the perovskite film layer with larger grain size and lower defect density is obtained by adding sodium thiocyanate into the perovskite precursor solution and through the perovskite film with the double actions of anions and cations, the defect state density can be obviously reduced, the formation of halide gap defects is inhibited, the service life of carriers is prolonged, the photoelectric conversion efficiency and stability are obviously improved, and the photoelectric conversion efficiency and stability of the prepared perovskite battery are comprehensively improved.
Meanwhile, the perovskite solar cell doped with sodium thiocyanate and the preparation method thereof can effectively improve the thickness of the perovskite film layer, improve the crystallization performance of the perovskite and effectively prevent the recombination of electrons and holes, thereby improving the stability of the perovskite solar cell and the attenuation of the photoelectric conversion efficiency.
Drawings
Fig. 1 is a schematic structural diagram of a perovskite solar cell doped with sodium thiocyanate according to the invention. The composite material comprises a 1-FTO conductive glass layer, a 2-tin dioxide electron transport layer, a 3-perovskite absorption layer, a 4-Spiro-OMeTAD hole transport layer and a 5-metal electrode layer.
FIG. 2 is a scanning electron micrograph of perovskite absorption layers obtained in comparative example and examples 1 to 4; wherein the doping amount percentages of the sodium thiocyanate in the perovskite absorption layer are respectively 0.00% (a), 0.27% (b), 0.45% (c), 0.72% (d) and 0.9% (e).
FIG. 3 is a scanning electron microscope cross-sectional view of perovskite absorption layers obtained in comparative example and examples 1 to 4; wherein the doping amount percentages of the sodium thiocyanate in the perovskite absorption layer are respectively 0.00% (a), 0.27% (b), 0.45% (c), 0.72% (d) and 0.9% (e).
Fig. 4 is a space charge-limited current curve diagram of the perovskite with the perovskite absorption layer doped with 0.00% and 0.45% of sodium thiocyanate according to the double electron transport layers under the dark state condition, and the defect state density of the solar cell doped with 0.45% of sodium thiocyanate can be calculated by a related surface defect state density conversion formula, so that the defect state density is remarkably reduced, which indicates that the crystallization quality of the perovskite absorption layer is remarkably improved.
Fig. 5 is an I-V curve diagram of the perovskite solar cell in which the perovskite absorption layer is doped with 0.00% and 0.45% of sodium thiocyanate under the irradiation of AM 1.5G light intensity, and it can be seen that the efficiency and stability of the perovskite solar cell in which the perovskite absorption layer is doped with 0.45% of sodium thiocyanate are improved.
Detailed Description
In order to better understand the present invention, the following examples are further provided to illustrate the content of the present invention, but the present invention is not limited to the following examples.
Comparative example 1
The preparation method of the perovskite solar cell without doping sodium thiocyanate comprises the following specific steps:
step one, cleaning an FTO conductive glass layer: selecting FTO conductive glass with the sheet resistance of 14 omega, the light transmittance of 85 percent and the thickness of 2.2mm as a substrate material, sequentially cleaning the FTO conductive glass in an ultrasonic machine for 30min by using a detergent solution, deionized water, ethanol, acetone and isopropanol, and then carrying out ultraviolet ozone cleaning treatment for 15min to obtain the FTO conductive glass layer with a clean surface.
Step two, preparing SnO2A dense layer: spin-coating 7.5 wt% aqueous tin oxide dispersion on FTO conductive glass layer at 4000rpm for 30s, heating at 150 deg.C for 30min, and slowly cooling to room temperature to obtain SnO2And the thickness of the dense layer is 40 nm.
Step three, preparing a perovskite precursor solution: mixing lead iodide (PbI)2) And methylamine iodide (MAI) were dissolved in a molar ratio of 1:1 in a mixed solvent of Dimethylformamide (DMF) and dimethyl sulfoxide (DMSO) (volume ratio of DMF to DMSO is 9:1) to give a total concentration of 1.4mol/mL, and the solution was stirred at room temperature for 1 hour to obtain clear and transparent PbI2And MAI.
Step four, preparing the perovskite light absorption layer: perovskite precursor solution (i.e. PbI)2Mixed solution with MAI) 120 μ L was drop-coated on SnO2And (3) on the compact layer, the spin coating parameter is 4000rpm, the time is 30 seconds, 100 mu L of chlorobenzene is dripped on the surface of the perovskite layer in the 6 th second after the start of the spin coating, and the perovskite light absorption layer is obtained by heating on a hot plate at the temperature of 100 ℃ for 10min after the spin coating is finished, wherein the thickness of the perovskite light absorption layer is 400 nm.
Step five, preparing a Spiro-OMeTAD solution: 72.3mg of Spiro-OMeTAD was dissolved in 1mL of chlorobenzene, followed by 17.5. mu.L of Li-TFSI solution (520mg of Li-TFSI in 1mL of acetonitrile) and 29. mu.L of 4-tert-butylpyridine (tBP) added and stirred at room temperature for 10min to form a clear, transparent, pale yellow Spiro-OMeTAD solution.
Step six, preparing a hole transport layer: and after the perovskite light absorption layer obtained in the fourth step is cooled to room temperature, the prepared Spiro-OMeTAD solution is coated on the perovskite light absorption layer in a rotating mode in a glove box according to the parameters of 3000 revolutions per minute and 30 seconds, after the rotating coating is finished, the whole device is taken out of the glove box and stored in a drying cabinet for oxidation for 12 hours, and a hole transmission layer is obtained, wherein the thickness of the hole transmission layer is 150 nm.
Step seven, preparing a metal electrode: placing the device which has executed the steps from one step to six in a thermal evaporation vacuum coating machine, and pumping the vacuum degree to 10-4And a layer of metal gold with the thickness of 100nm is evaporated on the surface of the hole transport layer to be used as a back electrode, so that the perovskite solar cell which is not doped with sodium thiocyanate is obtained.
Example 1
The preparation method of the perovskite solar cell doped with sodium thiocyanate comprises the following specific steps:
step one, cleaning an FTO conductive glass layer: selecting FTO conductive glass with the sheet resistance of 14 omega, the light transmittance of 85 percent and the thickness of 2.2mm as a substrate material, sequentially cleaning the FTO conductive glass in an ultrasonic machine for 30min by using a detergent solution, deionized water, ethanol, acetone and isopropanol, and then carrying out ultraviolet ozone cleaning treatment for 15min to obtain the FTO conductive glass layer with a clean surface.
Step two, preparing SnO2A dense layer: spin-coating 7.5 wt% aqueous tin oxide dispersion on FTO conductive glass layer at 4000rpm for 30s, heating at 150 deg.C for 30min, and slowly cooling to room temperature to obtain SnO2And the thickness of the dense layer is 40 nm.
Step three, preparing a perovskite precursor solution: mixing lead iodide (PbI)2) And methylamine iodide (MAI) were dissolved in a molar ratio of 1:1 in a mixed solvent of Dimethylformamide (DMF) and dimethyl sulfoxide (DMSO) (volume ratio of DMF to DMSO is 9:1) to give a total concentration of 1.4mol/mL, and the solution was stirred at room temperature for 1 hour to obtain clear and transparent PbI2And MAI.
Dissolving sodium thiocyanate powder in a Dimethylformamide (DMF) solution to obtain a sodium thiocyanate solution with the concentration of 1 mol/mL; 3 mu L of prepared sodium thiocyanate solution is added into 1mL of PbI2And MAI to obtain a 3mmol/mL sodium thiocyanate-doped perovskite precursor solution, wherein the concentration of sodium thiocyanate is 3mmol/mL, and MAI and PbI are added2The concentrations are all 0.7 mol/L.
Step four, preparing the perovskite light absorption layer: adding calcium120 mu L of titanium ore precursor solution is dripped on SnO2And (3) on the compact layer, the spin coating parameter is 4000rpm, the time is 30 seconds, 100 mu L of chlorobenzene is dripped on the surface of the perovskite layer in the 6 th second after the start of the spin coating, and the perovskite light absorption layer is obtained by heating on a hot plate at the temperature of 100 ℃ for 10min after the spin coating is finished, wherein the thickness of the perovskite light absorption layer is 420 nm.
Step five, preparing a Spiro-OMeTAD solution: 72.3mg of Spiro-OMeTAD was dissolved in 1mL of chlorobenzene, followed by 17.5. mu.L of Li-TFSI solution (520mg of Li-TFSI in 1mL of acetonitrile) and 29. mu.L of 4-tert-butylpyridine (tBP) added and stirred at room temperature for 10min to form a clear, transparent, pale yellow Spiro-OMeTAD solution.
Step six, preparing a hole transport layer: and after the perovskite light absorption layer obtained in the fourth step is cooled to room temperature, the prepared Spiro-OMeTAD solution is coated on the perovskite light absorption layer in a rotating mode in a glove box according to the parameters of 3000 revolutions per minute and 30 seconds, after the rotating coating is finished, the whole device is taken out of the glove box and stored in a drying cabinet for oxidation for 12 hours, and a hole transmission layer is obtained, wherein the thickness of the hole transmission layer is 150 nm.
Step seven, preparing a metal electrode: placing the device which has executed the steps from one step to six in a thermal evaporation vacuum coating machine, and pumping the vacuum degree to 10-4And a layer of metal gold with the thickness of 100nm is evaporated on the surface of the hole transport layer to be used as a back electrode, so that the perovskite solar cell which is not doped with sodium thiocyanate is obtained.
Example 2
Example 2 differs from example 1 in that: in the perovskite precursor solution, the concentration of sodium thiocyanate is 5 mmol/mL.
Example 3
Example 3 differs from example 1 in that: in the perovskite precursor solution, the concentration of sodium thiocyanate is 8 mmol/mL.
Example 4
Example 3 differs from example 1 in that: in the perovskite precursor solution, the concentration of sodium thiocyanate is 10 mmol/mL.
As shown in FIG. 2, in the scanning electron microscope images of the perovskite absorption layers of comparative examples to examples 1 to 4, the sodium thiocyanate concentrations in the precursor are respectively 0mmol/L (a), 3mmol/L (b), 5mmol/L (c), 8mmol/L (d) and 10mmol/L (e), and it can be seen that the perovskite crystal grains doped with sodium thiocyanate are obviously increased, the crystal boundaries are obviously reduced, the non-radiative recombination centers are reduced, the efficiency of the solar cell can be improved, and the stability is enhanced.
As shown in fig. 3, in the scanning electron microscope images of the perovskite absorption layers of comparative examples to examples 1 to 4, the concentrations of sodium thiocyanate in the precursor solution are respectively 0mmol/l (a), 3mmol/l (b), 5mmol/l (c), 8mmol/l (d) and 10mmol/l (e), and it can be seen that the thickness of the perovskite film layer doped with sodium thiocyanate is obviously increased, the perovskite crystallization performance is improved, and the recombination of electron-hole is effectively prevented, thereby improving the stability of the perovskite solar cell and the attenuation of the photoelectric conversion efficiency.
The space charge limited current curve of the double electron transport layer of the perovskite solar cell prepared in example 2 under the dark state condition is shown in fig. 4, and the defect state density of the perovskite absorption layer doped with 0.45% sodium thiocyanate can be calculated through a related surface defect state density conversion formula to obtain that the defect state density of the perovskite absorption layer is remarkably reduced, which indicates that the internal defect state is remarkably reduced.
Meanwhile, the perovskite solar cell prepared in the comparative example and the perovskite solar cell prepared in the example 2 are subjected to a current-voltage performance test under the standard solar light intensity, as shown in fig. 5, the photoelectric efficiency of the perovskite solar cell which is not doped with sodium thiocyanate in the comparative example is 16.13%, while the photoelectric efficiency of the perovskite solar cell obtained in the example 2 reaches 18.68%; when the solar cell prepared in example 2 is placed in an air environment with the temperature of 25 ℃ and the relative humidity of 50% and monitored for 1000h, the perovskite solar cell prepared in example 2 can still maintain the device performance of more than 85%, and the perovskite solar cell prepared in the comparative example under the same condition can only maintain the device performance of 70%.
The above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, many modifications and changes can be made without departing from the inventive concept of the present invention, and these modifications and changes are within the protection scope of the present invention.

Claims (10)

1. A high-efficiency stable perovskite solar cell doped with sodium thiocyanate is characterized in that: the battery comprises (1) an FTO conductive glass layer, (2) a stannic oxide layer, (3) a perovskite absorption layer, (4) a hole transport layer and (5) a metal electrode from bottom to top; the perovskite absorption layer is sodium thiocyanate-doped iodolead methylamine perovskite, and the doping amount of the sodium thiocyanate is 0-2% by mass percent and is not 0.
2. The high efficiency stable perovskite solar cell doped with sodium thiocyanate according to claim 1, characterized in that: the sheet resistance of the FTO conductive glass is 14-20 omega, the light transmittance is 80% -90%, and the thickness of the FTO conductive glass is 0.2mm-3 mm.
3. The high efficiency stable perovskite solar cell doped with sodium thiocyanate according to claim 1, characterized in that: the thickness of the tin dioxide layer is 30-50 nm.
4. The high efficiency stable perovskite solar cell doped with sodium thiocyanate according to claim 1, characterized in that: the thickness of the perovskite light absorption layer is 400-500 nm.
5. The high efficiency stable perovskite solar cell doped with sodium thiocyanate according to claim 1, characterized in that: the hole transport layer is 2,2',7,7' -tetra [ N, N-di (4-methoxyphenyl) amino ] -9,9' -spirobifluorene, and the thickness is 100-200 nm.
6. The high efficiency stable perovskite solar cell doped with sodium thiocyanate according to claim 1, characterized in that: the metal electrode is gold, and the thickness of the metal electrode is 100-150 nm.
7. The method of preparing a sodium thiocyanate-doped highly efficient stable perovskite solar cell as claimed in claim 1, wherein: preparing a compact tin dioxide layer on clean conductive glass by adopting a tin oxide water dispersion liquid, then preparing sodium thiocyanate-doped lead-iodine methylamine perovskite on the tin dioxide layer by adopting an anti-solvent method to serve as a perovskite absorption layer, and finally sequentially preparing a hole transport layer and a metal electrode layer on the perovskite absorption layer, thereby obtaining the sodium thiocyanate-doped high-efficiency stable perovskite solar cell.
8. The method of preparing a sodium thiocyanate-doped highly efficient stable perovskite solar cell as claimed in claim 7, wherein: the method for preparing sodium thiocyanate-doped iodolead methylamine perovskite by an anti-solvent method comprises the following steps:
(1) dissolving sodium thiocyanate powder in dimethylformamide to obtain a sodium thiocyanate solution, wherein the concentration of the sodium thiocyanate solution is 0.8-1mol/mL, namely; dissolving lead iodide and methylamine iodine in a mixed solvent of dimethyl formamide and dimethyl sulfoxide according to a molar ratio of 1:1, wherein the total concentration of the lead iodide and the methylamine iodine is 1-1.8mol/mL, and stirring to obtain a clear and transparent mixed solution of the lead iodide and the methylamine iodine;
(2) adding a sodium thiocyanate solution into a mixed solution of lead iodide and methylamine iodide to obtain a sodium thiocyanate-doped perovskite precursor solution, wherein the total concentration of lead iodide and methylamine iodide is 1-1.8mol/L, and the concentration of sodium thiocyanate is 3-10 mmol/L;
(3) and spin-coating the perovskite precursor solution on the tin dioxide layer in a glove box, adding chlorobenzene in the spin-coating process, and heating on a hot plate at 110 ℃ for 5-10min after the spin-coating is finished to obtain sodium thiocyanate-doped iodolead methylamine perovskite, namely the perovskite absorption layer.
9. The method of claim 8, wherein the method comprises the steps of: in the step (3), the spin-coating speed is 3000-; the volume ratio of chlorobenzene to the precursor solution is 0.8-1.2.
10. The method of preparing a sodium thiocyanate-doped highly efficient stable perovskite solar cell as claimed in claim 7, wherein: the hole transport layer is obtained by spin coating a perovskite absorption layer with a 2,2',7,7' -tetra [ N, N-di (4-methoxyphenyl) amino ] -9,9' -spirobifluorene solution and then oxidizing, wherein in the 2,2',7,7' -tetra [ N, N-di (4-methoxyphenyl) amino ] -9,9' -spirobifluorene solution, the concentration of lithium bis (trifluoromethanesulfonimide) is 0.5-1 wt%, the concentration of 4-tert-butylpyridine is 2.5-3 wt%, and the concentration of 2,2',7,7' -tetra [ N, N-di (4-methoxyphenyl) amino ] -9,9' -spirobifluorene is 7-7.5 wt%, and chlorobenzene is used as a solvent; the metal electrode layer is obtained by evaporating and depositing metal on the surface of the hole transport layer.
CN202111179594.3A 2021-10-11 2021-10-11 Sodium thiocyanate-doped efficient and stable perovskite solar cell and preparation method thereof Pending CN113972323A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114899323A (en) * 2022-03-25 2022-08-12 河北大学 Precursor solution and preparation thereof, solar cell active layer and preparation and application thereof
CN115835659A (en) * 2023-02-22 2023-03-21 北京科技大学 Hybrid perovskite solar cell and preparation method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114899323A (en) * 2022-03-25 2022-08-12 河北大学 Precursor solution and preparation thereof, solar cell active layer and preparation and application thereof
CN115835659A (en) * 2023-02-22 2023-03-21 北京科技大学 Hybrid perovskite solar cell and preparation method thereof

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