CN117423761A - Photoelectric detector based on high-resistance semiconductor film and preparation method thereof - Google Patents
Photoelectric detector based on high-resistance semiconductor film and preparation method thereof Download PDFInfo
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- CN117423761A CN117423761A CN202311272221.XA CN202311272221A CN117423761A CN 117423761 A CN117423761 A CN 117423761A CN 202311272221 A CN202311272221 A CN 202311272221A CN 117423761 A CN117423761 A CN 117423761A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 94
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 46
- 239000002184 metal Substances 0.000 claims abstract description 46
- 239000010408 film Substances 0.000 claims abstract description 33
- 239000010409 thin film Substances 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims description 71
- 239000000758 substrate Substances 0.000 claims description 9
- 238000005468 ion implantation Methods 0.000 claims description 8
- 239000002356 single layer Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims 3
- 238000000059 patterning Methods 0.000 claims 1
- 230000004044 response Effects 0.000 abstract description 12
- 238000005036 potential barrier Methods 0.000 abstract description 4
- 239000000969 carrier Substances 0.000 abstract description 2
- 150000002500 ions Chemical class 0.000 description 11
- 229910001195 gallium oxide Inorganic materials 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 238000004381 surface treatment Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- -1 n ion Chemical class 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 238000004549 pulsed laser deposition Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 229910001425 magnesium ion Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000004297 night vision Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention discloses a photoelectric detector based on a high-resistance semiconductor film and a preparation method thereof, relates to the field of semiconductor devices, and provides a scheme for solving the problem that in the prior art, a metal-semiconductor contact formed by the semiconductor film under high resistance has a high potential barrier, so that the collection efficiency of a detector metal electrode to carriers is low. The high-resistance semiconductor thin film is mainly characterized in that a heavily doped semiconductor thin layer is arranged on the upper end surface of the high-resistance semiconductor thin film at the position corresponding to the electrode layer; so that a potential well is formed at the contact interface of the metal layer and the heavily doped semiconductor thin layer. The method has the advantages that the carrier collecting capacity of the metal electrode in the photoelectric detector is improved, and the response speed and the response degree of the photoelectric detector are improved. On the other hand, the preparation method only changes the resistivity of the film below the metal electrode, does not affect the resistivity of other areas of the film, and the photoelectric detector can still keep lower dark current.
Description
Technical Field
The invention relates to the field of semiconductor devices, in particular to a photoelectric detector based on a high-resistance semiconductor film and a preparation method thereof.
Background
The photoelectric detector is an important photoelectric device for realizing sensing detection by converting an optical signal into an electric signal, and is widely applied to the fields of flame sensing, environment monitoring, night vision imaging, military tracking, medical detection and the like at present.
In basic principle, as shown in fig. 8, a substrate 100 is used as a support of a device, a high-resistance semiconductor thin film 110 is provided on the substrate 100, and an electrode pair is laid on the high-resistance semiconductor thin film 110.
The semiconductor has photoelectric characteristics, and the light irradiation can generate electron hole pairs in the semiconductor film, so that the resistivity of the semiconductor film is changed, and the change of the current between the electrode pairs is reflected. When no light is incident, it is desirable that the current between the electrode pairs is smaller. That is, the higher the resistance of the high-resistance semiconductor film is required.
After the photons UV irradiate the high-resistance semiconductor film, electron-hole pairs are generated, and electrons e are generated under the action of the two metal electrodes - And hole h + Is correspondingly collected. In the prior art, the high-resistance semiconductor thin film has a schottky contact with the metal electrode due to its high-resistance characteristics, and has a potential barrier as shown in fig. 10. Even by annealing or the like, this potential barrier cannot be completely eliminated, and the voltage-current characteristic linearity is not high. The existence of potential barrier results in low collecting efficiency of the metal electrode to the carriers, and influences the responsivity and response speed of the detector.
Disclosure of Invention
The invention aims to provide a photoelectric detector based on a high-resistance semiconductor film and a preparation method thereof, so as to solve the problems in the prior art.
The photoelectric detector based on the high-resistance semiconductor film comprises an electrode layer, the high-resistance semiconductor film and a substrate which are sequentially laminated; the upper end face of the high-resistance semiconductor film is provided with a heavily doped semiconductor thin layer at a position corresponding to the electrode layer, and the heavily doped semiconductor thin layer is obtained through ion implantation; so that a potential well is formed at the contact interface of the metal layer and the heavily doped semiconductor thin layer.
The thickness of the heavily doped semiconductor thin layer is 1nm to 50nm.
The carrier surface density of the heavily doped semiconductor thin layer is 1 multiplied by 10 11 cm -2 ～1×10 15 cm -2 。
The metal of the electrode layer is of a single-layer structure or a multi-layer structure.
Before preparing the electrode layer, carrying out graphical treatment on the upper end face of the high-resistance semiconductor film by utilizing an ion implantation mode; the patterned shape is adapted to the electrode layer.
The preparation method specifically comprises the following steps:
s1, preparing a high-resistance semiconductor film on the upper end face of a substrate;
s2, paving a patterned mask on the upper end face of the high-resistance semiconductor film;
s3, performing ion implantation on the upper end face of the structure obtained in the step S2, so that a heavily doped semiconductor thin layer is formed on the upper end face of the high-resistance semiconductor thin film in the mask graphical region;
s4, paving a metal layer on the upper end face of the structure obtained in the step S3, so that a potential well is formed at the contact interface of the metal layer and the heavily doped semiconductor thin layer;
s5, removing the mask and the metal layer above the mask to obtain the photoelectric detector.
The mask is provided with a first patterned via for preparing a first heavily doped semiconductor layer and with a second patterned via for preparing a second heavily doped semiconductor layer.
The metal layer forms a first metal electrode in a region contacting the first heavily doped semiconductor thin layer, and forms a second metal electrode in a region contacting the second heavily doped semiconductor thin layer.
The photoelectric detector based on the high-resistance semiconductor film and the preparation method thereof have the advantages that the carrier collecting capacity of the metal electrode in the photoelectric detector is improved, and the response speed and the responsivity of the photoelectric detector are improved. On the other hand, the preparation method only changes the resistivity of the film below the metal electrode, does not affect the resistivity of other areas of the film, and the photoelectric detector can still keep lower dark current.
Drawings
Fig. 1 is a schematic view of the structure of the photodetector according to the present invention.
Fig. 2 is a flowchart of the preparation of the photodetector according to the present invention.
Fig. 3 is a second flowchart for preparing a photodetector according to the present invention.
Fig. 4 is a third flowchart for preparing a photodetector according to the present invention.
Fig. 5 is a graph of the response current of the photodetector of the present invention versus a prior art photodetector.
Fig. 6 is a schematic diagram of the band structure of the photodetector according to the present invention.
Fig. 7 is a graph of the spectral response of a photodetector according to the present invention.
Fig. 8 is a graph of the time response of the photodetector of the present invention.
Fig. 9 is a schematic diagram of a prior art photodetector.
Fig. 10 is a schematic diagram of the band structure of the structure shown in fig. 9.
Fig. 11 is a graph of spectral response of the structure shown in fig. 9.
Fig. 12 is a time response graph of the structure shown in fig. 9.
Reference numerals:
100-a substrate;
110-high-resistance semiconductor film, 111-first heavily doped semiconductor thin layer, 112-second heavily doped semiconductor thin layer;
120-metal layer, 121-first metal electrode, 122-second metal electrode;
130-mask, 131-first patterned via, 132-second patterned via;
a-barrier, B-potential well.
Detailed Description
As shown in fig. 1, a high-resistance semiconductor thin film-based photodetector according to the present invention includes an electrode layer, a high-resistance semiconductor thin film 110, and a substrate 100, which are sequentially stacked. The upper end surface of the high-resistance semiconductor film 110 is provided with a heavily doped semiconductor thin layer at a position corresponding to the electrode layer, and the heavily doped semiconductor thin layer is obtained by ion implantation; so that a potential well is formed at the contact interface of the metal layer and the heavily doped semiconductor thin layer as shown in fig. 6. The thickness of the heavily doped semiconductor thin layer is 1nm to 50nm.
Specifically, the electrode layer includes a first metal electrode 121 as a positive electrode, and a second metal electrode 122 as a negative electrode. Below the first metal electrode 121 is a first heavily doped semiconductor thin layer 111 and below the second metal electrode 122 is a second heavily doped semiconductor thin layer 112.
The preparation method comprises the following steps:
a high-resistance semiconductor thin film 110 having a certain thickness is prepared on a substrate 100 by epitaxial growth, sputtering, mechanical lift-off, etc. The epitaxial growth mode can be selected from chemical vapor deposition CVD, molecular beam epitaxy MBE, pulsed laser deposition PLD and the like. The sputtering mode can be selected from ion beam sputtering to deposit IBSD, magnetron sputtering and the like. A mask 130 is introduced into the upper end surface of the high-resistance semiconductor film 110, the mask 130 is provided with a first patterned through hole 131 for preparing the first heavily doped semiconductor thin layer 111, and a second patterned through hole 132 for preparing the second heavily doped semiconductor thin layer 112, so that the region of the high-resistance semiconductor film 110, which needs to be doped and implanted, is exposed in a patterned manner, as shown in fig. 2.
The doping mode adopts plasma surface treatment, and fluorine-based gas plasma surface treatment is carried out on the surface of the sample in a reactive ion etching RIE or an inductively coupled plasma-reactive ion etching ICP-RIE system. The fluorine-based gas can be SF 6 、CF 4 Or CHF 3 . The exposed surfaces of the processed high-resistance semiconductor thin film 110 form an ion-doped first heavily doped semiconductor thin layer 111 and a second heavily doped semiconductor thin layer 112 having a thickness of several nanometers, as shown in fig. 3.
A metal layer 120 having a certain thickness is formed on the surface of the mask 130 and the high-resistance semiconductor thin film 110. And the metal layer 120 is located at a position corresponding to the first patterned through hole 131 and electrically contacts the first heavily doped semiconductor thin layer 111 to form a first metal electrode 121, and is located at a position corresponding to the second patterned through hole 132 and electrically contacts the second heavily doped semiconductor thin layer 112 to form a second metal electrode 122, as shown in fig. 4. The metal layer 120 can be prepared by electron beam evaporation EBE, thermal evaporation, magnetron sputtering, or the like. And the metal layer 120 may be formed as a single-layer metal structure or a multi-layer metal structure.
Finally, the mask 130 and the metal layer 120 on the mask 130 are removed to obtain the target device, as shown in fig. 1.
The photoelectric detector and the preparation method thereof have universality, are suitable for all detectors based on semiconductor photoelectric effect, and are particularly obvious in improvement of contact between a high-resistance semiconductor film and a corresponding metal electrode. The material of the high-resistance semiconductor film 110 may be one or more of the following: epsilon-gallium oxide, beta-gallium oxide, gallium nitride, aluminum nitride, boron nitride, diamond, gallium arsenide, indium phosphide, silicon, germanium, and the like. Ion implantation may employ P-type or N-type doping, with P-type ions such as: n ion, mg ion, B ion, al ion, etc.; n-type ions such as: f ion, si ion, P ion, sn ion, as ion, and the like.
According to the process, a doping mode of plasma surface treatment is adopted, fluoride ions are selected as doping ions, epsilon-gallium oxide with higher resistance is selected as a high-resistance semiconductor film, and the photoelectric detector is prepared. The surface density of the carrier on the surface of the heavily doped semiconductor thin layer is 1 multiplied by 10 after being doped by plasma surface treatment obtained by Hall test 11 cm -2 ～1×10 15 cm -2 。
By using a conventional structure of a photodetector as a comparative example, the material of the high-resistance semiconductor thin film is still epsilon-gallium oxide, and the difference between the structure and the photodetector of the present invention is that the upper end surface of the high-resistance semiconductor thin film 110 is not formed with the first heavily doped semiconductor thin layer 111 and the second heavily doped semiconductor thin layer 112, but directly forms contact with the first metal electrode 121 and the second metal electrode 122, and the contact is necessarily schottky contact, as shown in fig. 9. For convenience of comparison, a solar blind band with a narrower working band is selected. As shown in fig. 7 and 11, the responsivity of the photodetector of the present invention in the solar blind band is improved by about two orders of magnitude as compared with the conventional photodetector. As shown in fig. 8, the rise times of the photodetectors of the present invention at three cycles of the test were 0.35s,0.22s and 0.21s, respectively, with an average rise time of 0.26s. As shown in FIG. 12, the rise time of the comparative example in the three periods of the test was 2.17s,1.57s and 1.48s, respectively, and the average rise time was 1.74s. As shown in fig. 5, comparing the photo-response current of the photo-detector with that of the photo-detector in the prior art, it is obvious that the photo-current of the photo-detector has better linearity and larger photo-current than that of the photo-detector in the prior art; the photocurrent in the prior art is affected by the contact barrier between the metal and the high-resistance semiconductor, so that the linearity is poor, and the photocurrent is smaller. The comparison of the parameters shows that after the improved contact of potential wells is introduced, the response sensitivity and the response speed of the photoelectric detector are both obviously improved, and the overall performance of the detector is greatly improved.
It will be apparent to those skilled in the art from this disclosure that various other changes and modifications can be made which are within the scope of the invention as defined in the appended claims.
Claims (8)
1. A high-resistance semiconductor film-based photodetector includes an electrode layer, a high-resistance semiconductor film (110) and a substrate (100) laminated in this order;
it is characterized in that the method comprises the steps of,
the upper end face of the high-resistance semiconductor film (110) is provided with a heavily doped semiconductor thin layer at a position corresponding to the electrode layer, and the heavily doped semiconductor thin layer is obtained through ion implantation; so that a potential well is formed at the contact interface of the metal layer (120) and the heavily doped semiconductor thin layer.
2. The high-resistance semiconductor thin film-based photodetector according to claim 1, wherein the heavily doped semiconductor thin layer has a thickness of 1nm to 50nm.
3. The high-resistance semiconductor thin film-based photodetector of claim 1, wherein said heavily doped semiconductor thin film has a carrier areal density of 1 x 10 11 cm -2 ～1×10 15 cm -2 。
4. The high-resistance semiconductor thin film-based photodetector according to claim 1, wherein the metal of the electrode layer is a single-layer structure or a multi-layer structure.
5. The method for manufacturing a photodetector according to any one of claims 1 to 4, wherein, before the electrode layer is manufactured, patterning is performed on the upper end face of the high-resistance semiconductor thin film (110) by means of ion implantation; the patterned shape is adapted to the electrode layer.
6. The preparation method according to claim 5, comprising the following steps:
s1, preparing a high-resistance semiconductor film (110) on the upper end face of a substrate (100);
s2, paving a patterned mask (130) on the upper end face of the high-resistance semiconductor film (110);
s3, performing ion implantation on the upper end face of the structure obtained in the step S2, so that a heavily doped semiconductor thin layer is formed on the upper end face of the high-resistance semiconductor film (110) in the patterned area of the mask (130);
s4, paving a metal layer (120) on the upper end face of the structure obtained in the step S3, so that a potential well is formed at the contact interface of the metal layer (120) and the heavily doped semiconductor thin layer;
s5, removing the mask (130) and the metal layer (120) above the mask (130) to obtain the photoelectric detector.
7. The method of manufacturing according to claim 6, characterized in that the mask (130) is provided with a first patterned via (131) for preparing the first heavily doped semiconductor thin layer (111) and with a second patterned via (132) for preparing the second heavily doped semiconductor thin layer (112).
8. The method of manufacturing according to claim 7, characterized in that the region of the metal layer (120) in contact with the first heavily doped semiconductor thin layer (111) forms a first metal electrode (121) and the region in contact with the second heavily doped semiconductor thin layer (112) forms a second metal electrode (122).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311272221.XA CN117423761A (en) | 2023-09-27 | 2023-09-27 | Photoelectric detector based on high-resistance semiconductor film and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311272221.XA CN117423761A (en) | 2023-09-27 | 2023-09-27 | Photoelectric detector based on high-resistance semiconductor film and preparation method thereof |
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| Publication Number | Publication Date |
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| CN117423761A true CN117423761A (en) | 2024-01-19 |
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| CN202311272221.XA Pending CN117423761A (en) | 2023-09-27 | 2023-09-27 | Photoelectric detector based on high-resistance semiconductor film and preparation method thereof |
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| Country | Link |
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| CN (1) | CN117423761A (en) |
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