CN117410078A

CN117410078A - Inductance device, circuit board integrated inductance and electronic equipment

Info

Publication number: CN117410078A
Application number: CN202311357285.XA
Authority: CN
Inventors: 陈奕君
Original assignee: Guangdong Oppo Mobile Telecommunications Corp Ltd
Current assignee: Guangdong Oppo Mobile Telecommunications Corp Ltd
Priority date: 2023-10-18
Filing date: 2023-10-18
Publication date: 2024-01-16

Abstract

The application provides an inductance device, a circuit board integrated inductance and electronic equipment. The inductance device comprises a magnetic core, wherein the magnetic core is provided with a plurality of through holes and a plurality of air gaps, at least part of the through holes are communicated with the air gaps, and the air gaps penetrate through the magnetic core; and the coil penetrates through the through holes and is wound on the magnetic core, and the coil and the magnetic core are arranged in an insulating mode. The inductance device of the embodiment of the application has the advantages of being uniform in magnetic density distribution, strong in anti-magnetic saturation characteristic and high in inductance.

Description

Inductance device, circuit board integrated inductance and electronic equipment

Technical Field

The application relates to the field of electronics, in particular to an inductance device, a circuit board integrated inductance and electronic equipment.

Background

The inductance device is composed of a coil and a magnetic piece, when alternating current passes through the coil, alternating magnetic flux is generated inside and around the coil, and the inductance device has the functions of storing and releasing energy. In electronic circuit, the inductor has current limiting effect on AC, and it can form high-pass filter or low-pass filter, phase shifting circuit and resonant circuit with resistor or capacitor, so that it is widely used in various instruments and equipment. However, the magnetic flux density distribution of the existing inductance device is relatively uneven, and the anti-magnetic saturation characteristic is weak.

Disclosure of Invention

The embodiment of the application provides an inductance device, which has the advantages of uniform magnetic density distribution, strong anti-magnetic saturation characteristic and high inductance.

Embodiments of a first aspect of the present application provide an inductive device, comprising:

the magnetic core is provided with a plurality of through holes and a plurality of air gaps, at least part of the through holes are communicated with the air gaps, and the air gaps penetrate through the magnetic core; and

the coil penetrates through the through holes and is wound on the magnetic core, and the coil and the magnetic core are arranged in an insulating mode.

Embodiments of a second aspect of the present application provide a circuit board integrated inductor, comprising:

a circuit board; and

the inductor device according to the embodiment of the first aspect of the present application, the inductor device is embedded in the circuit board, the circuit board includes a first circuit layer, a first substrate layer, a supporting layer, a second substrate layer and a second circuit layer which are sequentially stacked, the coil part is formed on a conductive layer used for preparing the first circuit layer and the second circuit layer, and the magnetic core is embedded in the supporting layer.

An embodiment of a third aspect of the present application provides an electronic device, including:

a display screen;

An inductor device according to an embodiment of the first aspect of the present application or a circuit board integrated inductor according to an embodiment of the second aspect of the present application; and

the processor is electrically connected with the circuit board integrated inductor or the coil in the inductor device, and is used for controlling the magnitude and the direction of current flowing through the coil, and the processor is also electrically connected with the display screen and is used for controlling the display screen to display.

The inductance device comprises a magnetic core and a coil, wherein the magnetic core is provided with a plurality of through holes and a plurality of air gaps, at least part of the through holes are communicated with the air gaps, and the air gaps penetrate through the magnetic core; the coil penetrates through the through holes and is wound on the magnetic core, and the coil is arranged in an insulating mode with the magnetic core. The coil is arranged in the plurality of through holes in a penetrating way and is wound on the magnetic core, so that the magnetic core can cover a larger area in the inductance device, the magnetic core occupation ratio (namely, the area utilization rate) in the inductance device can be better improved under the condition that the size of the inductance device is fixed, the magnetic energy storage capacity of the inductance device is improved, more magnetic energy can be stored, and therefore the inductance of the inductance device can be improved. In addition, at least part of the through holes are provided with air gaps, magnetic circuits around the through holes are blocked, so that overhigh magnetic induction intensity near the through holes is avoided, the magnetic induction intensity at each position of the inductor device is more similar, the distribution of the magnetic induction intensity in the inductor device is more uniform, and the anti-magnetic saturation characteristic of the inductor is improved.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art.

Fig. 1 is a schematic structural diagram of an inductance device according to an embodiment of the present application.

Fig. 2 is a schematic diagram of an exploded structure of an inductive device according to an embodiment of the present application.

Fig. 3 is a schematic plan view of a magnetic core according to an embodiment of the present application.

Fig. 4 is an enlarged view of a broken line box I in fig. 3.

Fig. 5 is an exploded view of an inductor device according to yet another embodiment of the present application.

Fig. 6 is a schematic plan perspective structure of the inductance device of fig. 5.

Fig. 7 is a schematic cross-sectional structure of a magnetic core according to an embodiment of the present application.

Fig. 8 is a schematic cross-sectional structure of a magnetic core according to still another embodiment of the present application.

Fig. 9 is a schematic flow chart of a method for manufacturing an inductance device according to an embodiment of the present application.

Fig. 10 is an exploded structural schematic diagram of an inductance device of embodiment 1 of the present application.

Fig. 11 is an exploded structural schematic diagram of an inductance device of embodiment 2 of the present application.

Fig. 12 is an exploded structural schematic view of the inductance device of comparative example 1 of the present application.

Fig. 13 is a color chart of the magnetic density distribution of the inductance device of embodiment 1 of the present application along the extension plane thereof.

Fig. 14 is a gray scale of the magneto-dense distribution of the inductance device of embodiment 1 of the present application along the extension plane thereof.

Fig. 15 is a color chart of the magnetic density distribution of the inductance device according to embodiment 2 of the present application along the extension plane thereof.

Fig. 16 is a gray scale of the magnetic density distribution of the inductance device of embodiment 2 of the present application along the extension plane thereof.

Fig. 17 is a color chart of the magneto-dense distribution of the inductance device of comparative example 1 of the present application along the extension plane thereof.

Fig. 18 is a gray scale of the magnetic density distribution of the inductance device of comparative example 1 of the present application along the extension plane thereof.

Fig. 19 is a schematic structural diagram of a circuit board integrated inductor according to an embodiment of the present application.

Fig. 20 is a cross-sectional view of a circuit board integrated inductor along the direction Q-Q in fig. 19 in accordance with an embodiment of the present application.

Fig. 21 is a schematic structural diagram of an electronic device according to an embodiment of the present application.

Fig. 22 is a schematic view of a partially exploded structure of an electronic device according to an embodiment of the present application.

Fig. 23 is a circuit block diagram of an electronic device of an embodiment of the present application.

Reference numerals illustrate:

100-inductance device, 10-core, 11-via, 11 a-first via, 11 a-second via, 12-first surface, 13-air gap, 14-second surface, 17-magnetic film sub-layer, 18-insulator sub-layer, 19-adhesive sub-layer, 30-coil, 31-first wire, 32-second wire, 33-first electrical connector, 34-second electrical connector, 50-first insulator, 51-first via, 70-second insulator, 71-second via, 200-circuit board integrated inductance, 210-circuit board, 211-first circuit layer, 215-support layer, 219-second circuit layer, 500-electronics, 510-display, 520-housing, 530-processor, 550-memory.

Detailed Description

In order to make the present application solution better understood by those skilled in the art, the following description will clearly and completely describe the technical solution in the embodiments of the present application with reference to the accompanying drawings in the embodiments of the present application, and it is apparent that the described embodiments are only some embodiments of the present application, not all embodiments. All other embodiments, which can be made by one of ordinary skill in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application.

The terms first, second and the like in the description and in the claims of the present application and in the above-described figures, are used for distinguishing between different objects and not for describing a particular sequential order. Furthermore, the terms "comprise" and "have," as well as any variations thereof, are intended to cover a non-exclusive inclusion. For example, a process, method, system, article, or apparatus that comprises a list of steps or elements is not limited to only those listed steps or elements but may include other steps or elements not listed or inherent to such process, method, article, or apparatus.

The technical solutions in the embodiments of the present application will be described below with reference to the accompanying drawings.

It should be noted that, for convenience of explanation, in the embodiments of the present application, like reference numerals denote like components, and for brevity, detailed explanation of the like components is omitted in different embodiments.

The inductance device is composed of a coil and a magnetic piece, when alternating current passes through the coil, alternating magnetic flux is generated inside and around the coil, and the inductance device has the functions of storing and releasing energy. In electronic circuit, the inductor has current limiting effect on AC, and it can form high-pass filter or low-pass filter, phase shifting circuit and resonant circuit with resistor or capacitor, so that it is widely used in various instruments and equipment.

In the inductance device of the solenoid structure, the via hole connection structure of the solenoid coil winding is located in the outer area of the two sides of the magnetic film, and in order to avoid the contact short circuit between the via hole connection part and the magnetic film, the via hole can keep a certain safety distance from the edge of the magnetic film, so that more positions on the two sides of the magnetic film are free from being occupied by magnetic materials, and particularly when the size of the device is smaller, the occupied area ratio of the safety distance is higher, the occupied proportion of the magnetic film material in the total volume of the device is lower, and the inductance improvement of the inductance is limited.

In order to improve the area occupation ratio of the magnetic film in the inductance device, copper can be directly deposited on the magnetic film through holes, and the upper layer of wires and the lower layer of wires of the magnetic film are communicated, so that a solenoid coil is formed, the periphery of the through holes is provided with the magnetic film, the occupation ratio of the magnetic film in the whole device area is improved to the greatest extent, the magnetic energy storage capacity is enhanced, and further, higher inductance can be realized in the same device occupation area. However, the magnetic flux density (also called as magnetic flux density) around the via hole is higher due to the shorter magnetic path length, so that higher magnetic flux density is generated near the via hole, and the magnetic flux density is lower at a position far away from the via hole, so that uneven magnetic flux density distribution in the magnetic film is caused, when the magnetic flux density is higher than the saturation magnetic flux density of the magnetic film at the position where the magnetic flux density is higher, the magnetic film is locally saturated, the overall effective magnetic conductivity is reduced, the induction quantity is reduced, and the whole inductance device shows lower anti-saturation characteristic.

Referring to fig. 1 and 2, the present application provides an inductance device 100, which includes a magnetic core 10 and a coil 30; the magnetic core 10 is provided with a plurality of through holes 11 and a plurality of air gaps 13, at least part of the through holes 11 are communicated with the air gaps 13, and the air gaps 13 penetrate through the magnetic core 10; the coil 30 is disposed through the plurality of through holes 11 and wound around the magnetic core 10, and the coil 30 is disposed in an insulating manner with the magnetic core 10.

The inductance device 100 of the embodiment of the present application may be applied to electronic devices and the like, and is used for limiting ac, and the inductance device 100 and a resistor or a capacitor may form a high-pass filter or a low-pass filter, a phase shift circuit, a resonant circuit and the like.

It is understood that the through hole 11 and the air gap 13 penetrate the magnetic core 10 in the thickness direction of the magnetic core 10.

It should be noted that at least part of the plurality of through holes 11 is in communication with the air gap 13, and it is understood that each through hole 11 may be provided with the air gap 13, or only part of the through holes 11 may be provided with the air gap 13.

It should be noted that, the magnetic core 10 is not only located in the coil 30 (i.e., the central portion of the coil 30), but part of the magnetic core 10 is also located between the through holes 11 and 11 of the coil 30 or outside the coil 30 (i.e., the magnetic core 10 is beyond the position covered by the coil 30). It will be appreciated that the coil 30 passes through the core 10 twice on average per turn.

Alternatively, coil 30 may be, but is not limited to being, a solenoid coil 30. The material of the coil 30 may be, but is not limited to, copper.

Alternatively, the number of turns of the coil 30 may be, but is not limited to, 0.5 turns to 20 turns, for example, the number of turns of the coil 30 may be, but is not limited to, 0.5 turns, 1 turn, 2 turns, 3 turns, 4 turns, 5 turns, 8 turns, 10 turns, 12 turns, 14 turns, 16 turns, 18 turns, 20 turns, etc. The more turns of the coil 30, the larger the inductance of the inductor device 100 under other conditions, and therefore, the number of turns of the coil 30 may be designed according to the application scenario, the inductance to be achieved, and the like, and the present application is not limited specifically.

The inductance device 100 of the embodiment of the present application includes a magnetic core 10 and a coil 30, the magnetic core 10 has a plurality of through holes 11 and a plurality of air gaps 13, at least some of the plurality of through holes 11 are communicated with the air gaps 13, and the air gaps 13 penetrate through the magnetic core 10; the coil 30 is disposed through the plurality of through holes 11 and wound around the magnetic core 10, and the coil 30 is disposed in an insulating manner with the magnetic core 10. The coil 30 is disposed through the plurality of through holes 11 and is wound around the magnetic core 10, so that the magnetic core 10 can cover a larger area in the inductance device 100, and under the condition that the inductance device 100 has a certain size, the duty ratio of the magnetic core 10 in the inductance device 100 can be better improved (i.e. the area utilization ratio is higher), the magnetic energy storage capacity of the inductance device 100 is increased, and more magnetic energy can be stored, so that the inductance of the inductance device 100 can be improved. In addition, the air gaps 13 are arranged in at least part of the through holes 11, so that magnetic circuits around the through holes 11 are blocked, and the magnetic induction intensity near the through holes 11 is prevented from being too high, so that the magnetic induction intensity of each position of the inductance device 100 is more similar, the distribution of the magnetic induction intensity in the inductance device 100 is more uniform, and the anti-magnetic saturation characteristic of the inductance device 100 is improved.

Referring to fig. 3 and 4, in some embodiments, the width w of the air gap 13 ranges from: w is more than or equal to 5 mu m and less than or equal to 100 mu m. Specifically, the width w of the air gap 13 may be, but is not limited to, 5 μm, 8 μm, 10 μm, 13 μm, 15 μm, 18 μm, 20 μm, 23 μm, 25 μm, 28 μm, 30 μm, 35 μm, 40 μm, 45 μm, 50 μm, 60 μm, 70 μm, 80 μm, 90 μm, 100 μm, etc. If the width w of the air gap 13 is too small, the magnetic flux density of the inductor 100 is distributed more weakly (i.e., more unevenly), so that the anti-magnetic saturation characteristic of the inductor 100 is reduced (i.e., the improvement of the anti-magnetic saturation characteristic of the inductor 100 is limited), and in addition, the difficulty of the processing technology of the air gap 13 is increased; if the width w of the air gap 13 is too large, the uniformity of the magnetic flux density distribution of the inductance device 100 can be improved, but the magnetic path reluctance is too large, so that the inductance of the inductance device 100 is too low.

Further, the width w of the air gap 13 ranges from: w is more than or equal to 5 mu m and less than or equal to 80 mu m. When the width of the air gap 13 is in this range, it is possible to make the inductance device 100 have a high anti-magnetic saturation characteristic, and also to make the inductance device 100 have a high inductance.

Still further, the width w of the air gap 13 ranges from: w is more than or equal to 5 mu m and less than or equal to 65 mu m. When the width of the air gap 13 is in this range, it is possible to make the inductance device 100 have a high anti-magnetic saturation characteristic, and also to make the inductance device 100 have a high inductance.

Still further, the width w of the air gap 13 ranges from: w is more than or equal to 5 mu m and less than or equal to 50 mu m. When the width of the air gap 13 is in this range, it is possible to make the inductance device 100 have a high anti-magnetic saturation characteristic, and also to make the inductance device 100 have a high inductance.

Still further, the width w of the air gap 13 ranges from: w is more than or equal to 5 mu m and less than or equal to 30 mu m. When the width of the air gap 13 is in this range, it is possible to make the inductance device 100 have a high anti-magnetic saturation characteristic, and also to make the inductance device 100 have a high inductance.

In some embodiments, the length L of the air gap 13 ranges from: l is more than or equal to 20 μm and less than or equal to 500 μm. Specifically, the length L of the air gap 13 may be, but is not limited to, 20 μm, 30 μm, 50 μm, 60 μm, 80 μm, 100 μm, 120 μm, 140 μm, 160 μm, 180 μm, 200 μm, 230 μm, 250 μm, 280 μm, 300 μm, 350 μm, 400 μm, 450 μm, 500 μm, etc. If the length of the air gap 13 is too short, the uniformity of the magnetic flux density distribution of the inductance device 100 is weak, and the improvement of the anti-magnetic saturation characteristic of the inductance device 100 is limited; too long air gap 13 makes the magnetic path excessively large in magnetic resistance, and the inductance of inductive device 100 excessively low, and further, the farther from through hole 11, the lower the magnetic flux density, and therefore, the farther air gap 13 passes, the smaller the effect on enhancing the magnetic saturation characteristic.

Further, the length L of the air gap 13 ranges from: l is more than or equal to 20 mu m and less than or equal to 400 mu m. When the length of the air gap 13 is in this range, it is possible to provide the inductance device 100 with a high anti-magnetic saturation characteristic, and also to provide the inductance device 100 with a high inductance.

Still further, the length L of the air gap 13 ranges from: l is more than or equal to 20 mu m and less than or equal to 300 mu m. When the length of the air gap 13 is in this range, it is possible to provide the inductance device 100 with a high anti-magnetic saturation characteristic, and also to provide the inductance device 100 with a high inductance.

Still further, the length L of the air gap 13 ranges from: l is more than or equal to 50 mu m and less than or equal to 200 mu m. When the length of the air gap 13 is in this range, it is possible to provide the inductance device 100 with a high anti-magnetic saturation characteristic, and also to provide the inductance device 100 with a high inductance.

In some embodiments, the ratio w/d of the width w of the air gap 13 to the radial dimension d of the through hole 11 ranges from 0.01 to 0.1. Specifically, the ratio w/d of the width w of the air gap 13 to the radial dimension d of the through hole 11 may be, but is not limited to, 0.01, 0.02, 0.03, 0.04, 0.05, 0.06, 0.07, 0.08, 0.09, 0.1, etc. If the ratio w/d of the width w of the air gap 13 to the radial dimension d of the through hole 11 is too small, the improvement of the uniformity of the magnetic flux density distribution of the inductance device 100 is limited, and thus the improvement of the anti-magnetic saturation characteristic of the inductance device 100 is limited; if the ratio w/d of the width w of the air gap 13 to the radial dimension d of the through hole 11 is too large, the inductance of the inductor 100 is attenuated too much, which is disadvantageous in obtaining an inductor 100 with a high inductance.

Further, the ratio w/d of the width w of the air gap 13 to the radial dimension d of the through hole 11 is in the range of 0.03.ltoreq.w/d.ltoreq.0.08. Thus, the anti-magnetic saturation characteristic of the inductance device 100 can be effectively improved, and the inductance of the inductance device 100 is not excessively attenuated.

Alternatively, the radial dimension d of the through hole 11 is in the range of 50 μm.ltoreq.d.ltoreq.1000 μm. Specifically, the radial dimension d of the through hole 11 may be, but is not limited to, 50 μm, 100 μm, 150 μm, 200 μm, 250 μm, 300 μm, 400 μm, 500 μm, 600 μm, 700 μm, 800 μm, 900 μm, 1000 μm, etc. When the radial dimension d of the through hole 11 is in this range, the portion of the coil 30 located in the through hole 11 and the magnetic core 10 can have a relatively appropriate safe distance, and the magnetic core 10 can have a relatively high area ratio in the inductor, so that the inductance device 100 has a relatively high inductance.

Further, the radial dimension d of the through hole 11 is in the range of 50 μm.ltoreq.d.ltoreq.800. Mu.m. When the radial dimension d of the through hole 11 is in this range, the portion of the coil 30 located in the through hole 11 and the magnetic core 10 can have a relatively appropriate safe distance, and the magnetic core 10 can have a relatively high area ratio in the inductor, so that the inductance device 100 has a relatively high inductance.

Still further, the radial dimension d of the through hole 11 is in the range of 50 μm.ltoreq.d.ltoreq.500. Mu.m. When the radial dimension d of the through hole 11 is in this range, the portion of the coil 30 located in the through hole 11 and the magnetic core 10 can have a relatively appropriate safe distance, and the magnetic core 10 can have a relatively high area ratio in the inductor, so that the inductance device 100 has a relatively high inductance.

Still further, the radial dimension d of the through hole 11 is in the range of 100 μm.ltoreq.d.ltoreq.300. Mu.m. When the radial dimension d of the through hole 11 is in this range, the portion of the coil 30 located in the through hole 11 and the magnetic core 10 can have a relatively appropriate safe distance, and the magnetic core 10 can have a relatively high area ratio in the inductor, so that the inductance device 100 has a relatively high inductance.

In some embodiments, the plurality of through holes 11 includes a plurality of first through holes 11a and a plurality of second through holes 11B, the plurality of first through holes 11a are sequentially arranged at intervals along a first direction (as shown by an arrow a in fig. 3), the plurality of second through holes 11B are sequentially arranged at intervals along the first direction, the first through holes 11a and the second through holes 11B are sequentially arranged at intervals along a second direction (as shown by an arrow B in fig. 3), and the coil 30 sequentially alternately passes through the first through holes 11a and the second through holes 11B; in the first direction, the two closest to the edges of the plurality of first through holes 11a are provided with the air gap 13; the two of the plurality of second through holes 11b closest to the edge are provided with the air gap 13; wherein the first direction intersects the second direction.

It should be noted that the coil 30 is alternately disposed through the first through hole 11a and the second through hole 11b in turn, and it is understood that the coil 30 may pass through the first through hole 11a, pass through the second through hole 11b after reaching the second through hole 11b around the magnetic core 10, and then pass through the other first through hole 11a and the other second through hole 11b along the magnetic core 10, and repeatedly circulate in this way, and wind between the first through hole 11a and the second through hole 11b until the number of turns of the coil 30 satisfies the preset number.

In a specific embodiment, the first direction is perpendicular to the second direction, and in other embodiments, the first direction may be inclined to the second direction, for example, greater than or equal to 60 °.

It will be appreciated that, in the first direction, no air gap 13 is provided (i.e., not in communication with the air gap 13) in any of the plurality of first through holes 11a except for the two first through holes 11a at the edge positions. In the first direction, no air gap 13 is provided (i.e., not in communication with the air gap 13) in any of the plurality of second through holes 11b except for the two second through holes 11b at the edge positions.

Illustratively, the number of the first through holes 11a is three, the three first through holes 11a are sequentially arranged along the first direction, only the first two through holes 11a at the head and the tail of the three first through holes 11a are provided with air gaps 13, and the middle first through hole 11a is not provided with the air gaps 13; the number of the second through holes 11b is three, the three second through holes 11b are sequentially arranged along the first direction, and among the three second through holes 11b, only the first and the last two second through holes 11b are provided with air gaps 13, and the middle second through hole 11b is not provided with the air gaps 13.

In the present embodiment, for the first through holes 11a or the second through holes 11b that are not at the head-tail ends, since the current direction of the portions of the coil 30 located in the plurality of first through holes 11a is the same and the current direction of the portions of the coil 30 located in the plurality of second through holes 11b is the same, the magnetic flux density between the first through holes 11a or the second through holes 11b that are not at the head-tail ends is relatively uniform, and if the air gap 13 is provided, the contribution to the magnetic flux density uniformity is not large, but the inductance of the inductance device 100 is excessively reduced; in this embodiment, the air gaps 13 are only formed in the first direction in the first through holes 11a and the second through holes 11b, so that the magnetic flux density of the inductance device 100 can be increased, the inductance device 100 has better anti-magnetic saturation characteristics, and the inductance device 100 can retain higher inductance.

In some embodiments, the air gap 13 extends along a radial direction of the through hole 11. In other words, the length of the air gap 13 is along the radial direction of the through hole 11. This can better improve the uniformity of the magnetic flux density distribution of the inductor and improve the anti-magnetic saturation characteristics of the inductor device 100.

Referring to fig. 5, optionally, the magnetic core 10 includes a first surface 12 and a second surface 14 disposed opposite to each other, and the first through hole 11a and the second through hole 11b penetrate through the first surface 12 and the second surface 14; the coil 30 includes a plurality of first conductive wires 31, a plurality of second conductive wires 32, a plurality of first electrical connectors 33, and a plurality of second electrical connectors 34, wherein the first conductive wires 31, the first electrical connectors 33, the second conductive wires 32, and the second electrical connectors 34 are alternately connected in series in sequence; the first conductive wires 31 are sequentially and alternately arranged on the first surface 12 along the first direction, the second conductive wires 32 are sequentially and alternately arranged on the second surface 14 along the first direction, each first electric connecting piece 33 is penetrated through one first through hole 11a and corresponds to the first through hole 11a one by one, and each second electric connecting piece 34 is penetrated through one second through hole 11b and corresponds to the second through hole 11b one by one.

It will be appreciated that the coil 30 is wound in cycles with the first wire 31, the first electrical connector 33, the second wire 32 and the second electrical connector 34 being the smallest repeating unit. It will also be appreciated that each turn of the coil 30 comprises a first wire 31, a first electrical connection 33, a second wire 32 and a second electrical connection 34.

Alternatively, the plurality of first wires 31 are disposed parallel to each other, and the plurality of second wires 32 are disposed parallel to each other. The first conductive line 31 and the second conductive line 32 may be disposed in parallel or at an acute angle (e.g., 30 ° or less).

In this embodiment, the plurality of first wires 31 are disposed on the first surface 12, the plurality of second wires 32 are disposed on the second surface 14, and the first electrical connector 33 and the second electrical connector 34 are respectively disposed through the magnetic core 10, so that no matter how many turns of the coil 30 are, only one conductive layer is required to be disposed on two opposite sides of the magnetic core 10, and the preparation of the coil 30 can be realized through processes of exposing, developing, etching, deplating, depositing conductive materials (such as copper deposition) and the like, which can better simplify the process of preparing the coil 30, and make the inductance device 100 lighter and thinner.

Optionally, the diameter d1 of the first electrical connection 33 ranges from: d1 is more than or equal to 0.02mm and less than or equal to 0.5mm. Specifically, the diameter of the first electrical connector 33 may be, but is not limited to, 0.02mm, 0.05mm, 0.08mm, 0.1mm, 0.15mm, 0.2mm, 0.25mm, 0.3mm, 0.35mm, 0.4mm, 0.45mm, 0.5mm, etc. The diameter of the first electrical connector 33 is too small, which increases the resistance of the coil 30, and the diameter of the first electrical connector 33 is too large, which requires the first through hole 11a to be set larger to maintain a safe distance from the magnetic core 10, which reduces the duty ratio of the magnetic core 10.

Optionally, the diameter d2 of the second electrical connector 34 ranges from: d2 is more than or equal to 0.02mm and less than or equal to 0.5mm. Specifically, the diameter of the second electrical connector 34 may be, but is not limited to, 0.02mm, 0.05mm, 0.08mm, 0.1mm, 0.15mm, 0.2mm, 0.25mm, 0.3mm, 0.35mm, 0.4mm, 0.45mm, 0.5mm, etc. The diameter of the second electrical connector 34 is too small, which increases the resistance of the coil 30, and the diameter of the second electrical connector 34 is too large, which requires the second through hole 11b to be set larger to maintain a safe distance from the magnetic core 10, which reduces the duty ratio of the magnetic core 10.

Referring to fig. 6, alternatively, the spacing s1 between the first electrical connector 33 and the magnetic core 10 may be in the range of: s1 is more than or equal to 0.05mm and less than or equal to 0.3mm. In other words, the range of the spacing s1 between the outer peripheral side wall of the first electrical connector 33 and the inner peripheral side wall of the first through hole 11a is: s1 is more than or equal to 0.05mm and less than or equal to 0.3mm. Specifically, the spacing s1 between the first electrical connector 33 and the magnetic core 10 may be, but is not limited to, 0.05mm, 0.08mm, 0.1mm, 0.12mm, 0.15mm, 0.18mm, 0.2mm, 0.23mm, 0.25mm, 0.28mm, 0.3mm, and the like. If the space between the first electrical connector 33 and the magnetic core 10 is too small, the first electrical connector 33 and the magnetic core 10 are easy to be short-circuited, which affects the normal operation of the inductance device 100; too large a distance between the first electrical connector 33 and the magnetic core 10 reduces the volume ratio of the magnetic core 10, and reduces the magnetic energy storage capacity of the magnetic core 10, thereby reducing the inductance of the inductive device 100. When the spacing s1 between the first electrical connector 33 and the magnetic core 10 is 0.05mm to 0.3mm, not only can the first electrical connector 33 and the magnetic core 10 have a proper safety distance, but also the magnetic core 10 of the inductance device 100 can have a higher volume ratio.

Optionally, the spacing s2 between the second electrical connector 34 and the magnetic core 10 ranges from: s2 is more than or equal to 0.05mm and less than or equal to 0.3mm. In other words, the range of the spacing s2 between the outer peripheral side wall of the second electrical connector 34 and the inner peripheral side wall of the second through hole 11b is: s2 is more than or equal to 0.05mm and less than or equal to 0.3mm. Specifically, the spacing s2 between the second electrical connector 34 and the magnetic core 10 may be, but is not limited to, 0.05mm, 0.08mm, 0.1mm, 0.12mm, 0.15mm, 0.18mm, 0.2mm, 0.23mm, 0.25mm, 0.28mm, 0.3mm, etc. If the interval between the second electrical connector 34 and the magnetic core 10 is too small, the second electrical connector 34 and the magnetic core 10 are easy to be short-circuited, which affects the normal operation of the inductance device 100; too large a distance between the second electrical connector 34 and the magnetic core 10 reduces the volume ratio of the magnetic core 10, and reduces the magnetic energy storage capacity of the magnetic core 10, thereby reducing the inductance of the inductive device 100. When the spacing s2 between the second electrical connector 34 and the magnetic core 10 is 0.05mm to 0.3mm, not only a suitable safety distance between the second electrical connector 34 and the magnetic core 10 can be provided, a contact short circuit can be avoided, but also the magnetic core 10 of the inductance device 100 can be provided with a higher volume ratio.

Referring to fig. 7, in some embodiments, the magnetic core 10 includes N magnetic film sublayers 17 and at least N-1 insulating sublayers 18, the magnetic film sublayers 17 and the insulating sublayers 18 are alternately stacked in sequence along a third direction, and the third direction intersects the first direction and intersects the second direction, wherein N is greater than or equal to 2 and is a positive integer.

In a specific embodiment, the third direction is perpendicular to the first direction and perpendicular to the second direction. Alternatively, the third direction is the thickness direction of the magnetic core 10.

It will be appreciated that the first through hole 11a and the second through hole 11b penetrate the magnetic core 10 along the lamination direction of the magnetic film sub-layer 17 and the insulator sub-layer 18, in other words, the first through hole 11a penetrates each of the magnetic film sub-layers 17 and each of the insulator sub-layers 18, and the second through hole 11b penetrates each of the magnetic film sub-layers 17 and each of the insulator sub-layers 18.

It will be appreciated that the air gap 13 extends through each of the magnetic film sublayers 17 and each of the insulator sublayers 18 in a third direction (i.e., the thickness direction of the core 10). It should be noted that, although the air gap 13 penetrates through each of the magnetic film sublayers 17 along the third direction, each of the magnetic film sublayers 17 is a film layer of an integral structure, and the air gap 13 does not divide the magnetic film sublayers 17 into a plurality of portions at intervals.

When the magnetic core 10 has only one magnetic film layer, a larger eddy current effect is generated in the thickness direction of the magnetic core 10, in this embodiment, each magnetic film sub-layer 17 is thinned, and an insulating sub-layer 18 is disposed between any two adjacent magnetic film sub-layers 17, and the insulating sub-layer 18 can prevent the eddy current in the magnetic film sub-layers 17 from conducting in the thickness direction of the magnetic core 10, thereby reducing the eddy current loss of the whole magnetic core 10 in the thickness direction, further reducing the eddy current loss of the whole inductance device 100, and improving the efficiency of the inductance device 100. Compared with the scheme of only one magnetic film layer, the magnetic core 10 has the advantage that at least two magnetic film sublayers 17 are sequentially arranged in an insulating manner under the condition of the same thickness, so that the eddy current loss of 75% in the cross section of the magnetic core 10 can be reduced.

Alternatively, the thickness h1 of each magnetic film sub-layer 17 is in the range of 0.5 μm.ltoreq.h1.ltoreq.10μm; in other words, the thickness of each magnetic film sub-layer 17 is in the range of 0.5 μm to 10 μm in the lamination direction of the magnetic film sub-layer 17 and the insulator sub-layer 18. Specifically, the thickness h1 of each magnetic film sub-layer 17 may be, but is not limited to, 0.5 μm, 0.8 μm, 1 μm, 1.5 μm, 2 μm, 3 μm, 4 μm, 5 μm, 6 μm, 7 μm, 8 μm, 9 μm, 10 μm, etc. When the thickness of the magnetic film sub-layer 17 is too small, the ratio of the magnetic film sub-layer 17 in the total thickness of the magnetic core 10 is too small, which is disadvantageous for increasing the inductance of the inductance device 100, and in addition, if the magnetic film sub-layer 17 with the same total thickness is to be realized, more layers are required, which increases the complexity of the process and the production cost. When the thickness of the magnetic film sub-layer 17 is too large, this increases eddy current loss in the single-layer magnetic film sub-layer 17 and increases the difficulty of deposition of the magnetic film sub-layer 17.

Alternatively, the total thickness h of the N magnetic film sublayers 17 in the magnetic core 10 is in the range of 5 μm.ltoreq.h.ltoreq.500 μm. Further, the total thickness h of the N magnetic film sublayers 17 in the magnetic core 10 is in the range of 50 μm.ltoreq.h.ltoreq.500 μm. Specifically, the total thickness h of the N magnetic film sublayers 17 in the magnetic core 10 may be, but is not limited to, 5 μm, 8 μm, 10 μm, 20 μm, 30 μm, 50 μm, 80 μm, 100 μm, 150 μm, 200 μm, 250 μm, 300 μm, 350 μm, 400 μm, 450 μm, 500 μm, etc. The total thickness of the N magnetic film sublayers 17 in the magnetic core 10 is too small, and the ratio of the magnetic film sublayers 17 in the total thickness of the magnetic core 10 is too small, which is not beneficial to improving the inductance of the inductance device 100, and the total thickness of the N magnetic film sublayers 17 in the magnetic core 10 is too large, which increases the process difficulty and cost of the magnetic core 10.

In some embodiments, the material of the magnetic film sub-layer 17 includes at least one of a magnetic metal, a magnetic alloy, and the like. Optionally, the magnetic metal comprises at least one of iron, cobalt, nickel; the magnetic alloy comprises at least one of an iron-based crystalline alloy, an iron-based amorphous alloy and a cobalt-based amorphous alloy; the iron-based crystalline alloy comprises at least one of FeNi alloy, feCo alloy, feAl alloy, feSiAl alloy, feNiMo alloy, feC alloy and the like; the iron-based amorphous alloy comprises at least one of FeSiB alloy, feB alloy, feNiPB alloy, feNiMoB alloy and the like; the cobalt-based amorphous alloy includes at least one of CoFeSiB alloy, cofecrsibb alloy, coNiFeSiB alloy, and the like. The cobalt-based amorphous alloy has a higher relative permeability than the iron-based crystalline alloy and the iron-based amorphous alloy, and thus, when the magnetic core 10 requires a higher relative permeability, at least one of the cobalt-based amorphous alloys may be used for the magnetic film sub-layer 17. Compared with cobalt-based amorphous alloy, the iron-based crystalline alloy and the iron-based amorphous alloy have higher saturation magnetic properties, and when the magnetic core 10 requires higher saturation magnetic properties, the magnetic film sub-layer 17 can be at least one of the iron-based crystalline alloy and the iron-based amorphous alloy. Compared with the iron-based crystalline alloy, the iron-based amorphous alloy and the cobalt-based amorphous alloy have lower coercive force, and when the magnetic core 10 requires lower coercive force, the magnetic film sub-layer 17 can be selected from the iron-based amorphous alloy and the cobalt-based amorphous alloy. The coercivity (coercive force) refers to the fact that after the magnetic material is saturated and magnetized, when the external magnetic field returns to zero, the magnetic induction intensity B does not return to zero, and the magnetic induction intensity can return to zero only by adding a magnetic field with a certain size in the opposite direction of the original magnetizing field, and the magnetic field is called coercive field, which is also called coercive force.

Alternatively, the relative permeability of the magnetic film sub-layer 17 is 100. Ltoreq.μr3.ltoreq.1000. Further, the relative permeability of the magnetic film sub-layer 17 is 200- μr3-800. Still further, the relative permeability of the magnetic film sub-layer 17 is 300.ltoreq.μr3.ltoreq.500. In particular, the relative permeability of the magnetic film sub-layer 17 may be, but is not limited to, 100, 150, 200, 250, 300, 350, 400, 450, 500, 600, 700, 800, 900, 1000, etc. The relative permeability of the magnetic film sub-layer 17 is too low, so that the effective relative permeability of the obtained magnetic core 10 is too low, and the inductance of the inductance device 100 is too low, and the relative permeability of the magnetic film sub-layer 17 is too high, so that the requirements on materials are too severe, the cost of the materials is increased, and even the materials cannot be achieved.

Alternatively, the thickness h2 of the insulator layer 18 is in the range of 10 μm.ltoreq.h2.ltoreq.60 μm in the lamination direction of the magnetic film sub-layer 17 and the insulator layer 18. Specifically, the thickness h2 of each insulator sub-layer 18 may be, but is not limited to, 10 μm, 15 μm, 20 μm, 25 μm, 30 μm, 35 μm, 40 μm, 45 μm, 50 μm, 55 μm, 60 μm, etc. The thickness of the insulating sub-layer 18 is too small, the mechanical properties are low (i.e. the mechanical properties are limited), which is not beneficial to the deposition of the magnetic film sub-layer 17, and the thickness of the insulating sub-layer 18 is too large, which increases the thickness of the magnetic core 10, which is not beneficial to the ultra-thin of the manufactured inductance device 100.

Optionally, the insulator layer 18 includes at least one of a polyimide film (PI film), a glass fiber/epoxy composite board (Prepreg). The polyimide film has better flexibility and can be better applied to flexible circuit boards. The glass fiber/epoxy resin composite board has better rigidity and is more suitable for being applied to a printed circuit board.

Referring to fig. 8, in some embodiments, the magnetic core 10 further includes at least N-layer adhesion sub-layers 19, and the insulating sub-layers 18, the magnetic film sub-layers 17, and the adhesion sub-layers 19 are sequentially stacked alternately. When the magnetic core 10 is manufactured, the magnetic film sub-layer 17 is deposited on the insulator sub-layer 18 by electroplating or the like, and then a plurality of the insulator sub-layers 18 deposited with the magnetic film sub-layer 17 are bonded by the bonding sub-layer 19, so as to form the magnetic core 10 with a plurality of the insulator sub-layers 18, the magnetic film sub-layers 17 and the bonding sub-layers 19 which are alternately laminated in sequence. The plurality of insulating sublayers 18 with the magnetic film sublayers 17 may be bonded by the bonding sublayers 19 to form the magnetic core 10 of unitary construction. The use of the adhesive sub-layer 19 to stack the plurality of insulator sub-layers 18/magnetic film sub-layers 17 simplifies the assembly process of the magnetic core 10 so that each of the insulator sub-layers 18/magnetic film sub-layers 17 are more firmly assembled together.

Specifically, the number of the adhesive sublayers 19 may be one or more layers, such as one layer, two layers, three layers, four layers, five layers, etc., and the number of the adhesive sublayers 19 may be determined according to the number of the magnetic film sublayers 17 included in the magnetic core 10, which is not particularly limited in this application.

Alternatively, the adhesive sub-layer 19 may be, but is not limited to, a green film.

Optionally, the green sheet comprises at least one of an acrylic resin and an epoxy resin. The acrylic resin has higher bonding strength and better ductility and flexibility, so that the acrylic resin is more suitable for being applied to flexible circuits, but has unsatisfactory electrical performance and can cause copper migration under high-temperature environmental conditions; the epoxy resin has better adhesive property and electrical property, and has better corrosion resistance, so that all properties of the epoxy resin are balanced and good.

Alternatively, the thickness h3 of each adhesive sub-layer 19 is in the range of 10 μm.ltoreq.h3.ltoreq.30μm in the lamination direction of the insulator sub-layer 18, the magnetic film sub-layer 17, and the adhesive sub-layer 19. Specifically, the thickness h3 of each adhesive sub-layer 19 may be, but is not limited to, 10 μm, 12 μm, 14 μm, 16 μm, 18 μm, 20 μm, 22 μm, 24 μm, 26 μm, 28 μm, 30 μm, etc. The thickness of the adhesive sub-layer 19 is too thin, the adhesive performance is insufficient, the adhesive firmness of the magnetic film sub-layer 17 is affected, in addition, the mechanical property is limited when the adhesive sub-layer 19 is too thin, and the preparation is difficult in process; if the thickness of the adhesive sub-layer 19 is too large, the thickness of the magnetic core 10 is increased, which is disadvantageous for the light and thin thickness of the inductance device 100.

In other embodiments, the adhesive sub-layer 19 may be formed by coating, spin coating, knife coating, or the like, using a liquid adhesive, and then heat-curing.

In other embodiments, the magnetic core 10 may be at least one of a metal magnetic powder core, ferrite, etc. formed entirely of a magnetic material.

Referring to fig. 6 again, optionally, the inductor device 100 further includes a first insulating member 50 and a second insulating member 70, where the first insulating member 50 is disposed in the first through hole 11a, the first insulating member 50 has a first through hole 51, and the first through hole 51 is used to pass through the first electrical connection member 33; the second insulator 70 is disposed in the second through hole 11b, and the second insulator 70 has a second through hole 71, and the second through hole 71 is used for penetrating the second electrical connector 34.

In this embodiment, by providing the first insulating member 50 and the second insulating member 70, the first electrical connector 33 and the second electrical connector 34 can be better insulated from the magnetic core 10, so that the short-circuit connection between the first electrical connector 33 and the second electrical connector 34 and the magnetic core 10 can be better avoided.

Alternatively, the wall thickness of the first insulating member 50 ranges from 0.05 mm.ltoreq.L1.ltoreq.0.3 mm; specifically, the wall thickness of the first insulator 50 may be, but is not limited to, 0.05mm, 0.08mm, 0.1mm, 0.12mm, 0.15mm, 0.18mm, 0.2mm, 0.23mm, 0.25mm, 0.28mm, 0.3mm, etc. If the wall thickness of the first insulating member 50 is too small, the first electrical connection member 33 and the magnetic core 10 are easily shorted, which affects the normal operation of the inductance device 100; the excessive wall thickness of the first insulator 50 reduces the volume fraction of the core 10 and reduces the magnetic energy storage capacity of the core 10, thereby reducing the inductance of the inductive device 100. When the wall thickness of the first insulating member 50 is 0.05mm to 0.3mm, not only a suitable safety distance between the first electrical connecting member 33 and the magnetic core 10 can be provided, a contact short circuit can be avoided, but also the magnetic core 10 of the inductance device 100 can be provided with a higher volume ratio.

Alternatively, the wall thickness of the second insulating member 70 is in the range of 0.05 mm.ltoreq.L2.ltoreq.0.3 mm; specifically, the wall thickness of the second insulator 70 may be, but is not limited to, 0.05mm, 0.08mm, 0.1mm, 0.12mm, 0.15mm, 0.18mm, 0.2mm, 0.23mm, 0.25mm, 0.28mm, 0.3mm, etc. If the wall thickness of the second insulating member 70 is too small, the second electrical connector 34 and the magnetic core 10 are easily shorted, which affects the normal operation of the inductance device 100; the excessive wall thickness of the second insulator 70 reduces the volume fraction of the core 10 and reduces the magnetic energy storage capacity of the core 10, thereby reducing the inductance of the inductive device 100. When the wall thickness of the second insulating member 70 is 0.05mm to 0.3mm, not only a proper safety distance between the second electrical connector 34 and the magnetic core 10 can be provided, a contact short circuit can be avoided, but also the magnetic core 10 of the inductance device 100 can be provided with a higher volume ratio.

The first insulating member 50 may be in a ring-shaped structure, and an outer peripheral side wall of the first insulating member 50 is disposed in contact with an inner peripheral side wall of the first through hole 11a, and an inner peripheral side wall of the first insulating member 50 is disposed in contact with an outer peripheral side wall of the first electrical connector 33. Similarly, the second insulating member 70 has a ring-shaped structure, and the outer peripheral side wall of the second insulating member 70 is disposed in contact with the inner peripheral side wall of the second through hole 11b, and the inner peripheral side wall of the second insulating member 70 is disposed in contact with the outer peripheral side wall of the second electrical connector 34.

In some embodiments, the material of the first insulating member 50 may be, but is not limited to, epoxy. The material of the second insulating member 70 may be, but is not limited to, epoxy. The first insulating member 50 and the second insulating member 70 may be formed by curing a liquid epoxy resin.

In one embodiment, the first through hole 11a is filled with liquid epoxy resin, and after curing, a resin member is formed, a first insulating member is punched on the resin member, and a conductive material (e.g., copper deposition) is deposited on the hole to form the first electrical connection member 33, so that the magnetic core 10, the first insulating member 50 and the first electrical connection member 33 are integrally connected. Similarly, the second through hole 11b is filled with liquid epoxy resin, and is cured to form a resin member, the resin member is perforated to obtain a second insulating member, and a conductive material (e.g., copper deposition) is deposited in the hole to form the second electrical connector 34, so that the magnetic core 10, the second insulating member 70, and the second electrical connector 34 are integrally connected.

Referring to fig. 9, an embodiment of the present application further provides a method for manufacturing an inductance device 100, which includes:

s201, providing an insulator layer 18;

for a detailed description of the insulator layer 18, please refer to the corresponding parts of the above embodiments, and the detailed description is omitted here.

S202, forming a magnetic film sub-layer 17 on the insulating sub-layer 18 to obtain a laminated insulating sub-layer 18/magnetic film sub-layer 17;

optionally, a magnetic film sub-layer 17 is deposited on the surface of the insulator sub-layer 18 by electroplating or the like. For a detailed description of the magnetic film sub-layer 17, please refer to the corresponding parts of the above embodiments, and the detailed description is omitted herein.

In other embodiments, the self-supporting magnetic film sublayer 17 may also be prepared using a cathode roll process without using the insulator sublayer 18 as a support substrate.

S203, overlapping the plurality of insulator layers 18/magnetic film sublayers 17, and bonding by adopting the bonding sublayers 19 to obtain the insulator layers 18/magnetic film sublayers 17/bonding sublayers 19 which are alternately laminated in turn, so as to obtain the magnetic core 10 structure; and

alternatively, the prepared insulator sub-layer 18/magnetic film sub-layer 17 is heat-pressed and bonded together through the bonding sub-layer 19 to obtain sequentially alternately laminated insulator sub-layer 18/magnetic film sub-layer 17/bonding sub-layer 19 to obtain the magnetic core 10 structure. For a detailed description of the adhesive sub-layer 19, please refer to the corresponding parts of the above embodiments, and the detailed description is omitted here.

S204, a plurality of first through holes 11a and a plurality of second through holes 11b are punched in the sequentially alternately laminated insulator sub-layer 18, magnetic film sub-layer 17, and adhesive sub-layer 19.

Alternatively, only one magnetic core 10 may be prepared at a time, or a plurality of magnetic cores 10 may be prepared at the same time. When it is necessary to simultaneously prepare a plurality of magnetic cores 10, it is possible to prepare a large-sized sequentially alternately laminated insulating sub-layer 18/magnetic film sub-layer 17/adhesive sub-layer 19, and to drill a plurality of first through holes 11a and a plurality of second through holes 11b at positions corresponding to the plurality of first through holes 11a and the plurality of second through holes 11b of each magnetic core 10 by means of laser or mechanical drilling.

For a description of other aspects of the magnetic core 10, please refer to the corresponding parts of the above embodiments, and the description is omitted here.

S205, forming a first insulator 50 in the plurality of first through holes 11a of the magnetic core 10 and forming a second insulator 70 in the plurality of second through holes 11b of the magnetic core 10;

alternatively, a liquid epoxy resin is injected into the plurality of first through holes 11a of the magnetic core 10 and is heat-cured to form the first insulating member 50. And a liquid epoxy resin is injected into the plurality of second through holes 11b of the magnetic core 10 and is heat-cured to form the second insulating member 70.

S206, providing a first substrate layer/a first conductive layer which are stacked, and a second substrate layer/a second conductive layer which are stacked;

alternatively, the first substrate layer/first conductive layer may be, but is not limited to, a single-sided copper-clad laminate, and the second substrate layer/second conductive layer may be, but is not limited to, a single-sided copper-clad laminate. Alternatively, the first substrate layer may be, but is not limited to, a polyimide film (PI film) or a fiberglass/epoxy composite board (Prepreg board). The second substrate layer may be, but is not limited to, a polyimide film (PI film) or a fiberglass/epoxy composite board (Prepreg board). The first conductive layer may be, but is not limited to being, a copper layer and the second conductive layer may be, but is not limited to being, a copper layer.

S207, the first substrate layer/first conductive layer and the second substrate layer/second conductive layer are respectively stacked on two opposite sides of the magnetic core 10 having the first insulating member 50 and the second insulating member 70, and the first conductive layer and the second conductive layer are respectively arranged away from the magnetic core 10 and cover the magnetic core 10, the first insulating member 50 and the second insulating member 70;

optionally, the first substrate layer/first conductive layer, the second substrate layer/second conductive layer, and the magnetic core 10 having the first insulating member 50 and the second insulating member 70 are sequentially stacked and pressed together.

S208, etching the first conductive layer and the second conductive layer, and depositing conductive materials on the first insulating member 50 and the second insulating member 70 through holes to form the coil 30; and

optionally, exposing, developing, etching, and leg film the first conductive layer to obtain a plurality of first conductive lines 31; the second conductive layer is exposed, developed, etched, leg film to obtain a plurality of second conductive lines 32 arranged at intervals. The first conductive layer/first base material layer/magnetic core 10+first insulating member 50+second insulating member 70/second base material layer/second conductive layer are stacked, via holes are formed in positions corresponding to the first insulating member 50 and the second insulating member 70, and conductive materials (e.g., copper) are deposited in the via holes to form the first electrical connection member 33 and the second electrical connection member 34, so that the first conductive wire 31, the first electrical connection member 33, the second conductive wire 32, and the second electrical connection member 34 are sequentially connected in series to form the coil 30.

It should be noted that the method of the present embodiment may be used to manufacture a single inductive device 100 or to manufacture a plurality of inductive devices 100 simultaneously.

S209, the air gap 13 is opened on at least part of the plurality of through holes of the magnetic core 10 corresponding to the air gap 13.

Alternatively, a laser etch may be used to open the air gap 13. For a detailed description of other aspects of the air gap 13, please refer to the corresponding parts of the above embodiments, and the detailed description is omitted herein.

The method for manufacturing the inductance device 100 of the present embodiment may be used to manufacture a plurality of inductance devices 100 on a board at the same time, and after the manufacturing is completed, the inductance devices 100 are cut by a laser cutting or die cutting method. In addition, the preparation of the inductance device 100 of the present application may also be performed in the process of manufacturing the circuit board, and the coil 30 is prepared by using the copper-clad plate for forming the circuit board (i.e., the first substrate layer/the first conductive layer and the second substrate layer/the second conductive layer are copper-clad plates), so as to prepare the inductance device 100 embedded in the circuit board (i.e., the integrated inductance of the circuit board).

The inductor device 100 according to the embodiment of the present application is further described below by way of specific embodiments.

Example 1

The inductance device 100 of the present embodiment includes a magnetic core 10 and a coil 30, the magnetic core 10 has three first through holes 11a and three second through holes 11b, the three first through holes 11a are sequentially arranged at intervals along a first direction, the three second through holes 11b are sequentially arranged at intervals along the first direction, the first through holes 11a and the second through holes 11b are arranged at intervals along a second direction, wherein the first direction intersects with the second direction; the coils 30 sequentially penetrate through the first through holes 11a and the second through holes 11b alternately, and are wound on the magnetic core 10, and the coils 30 are arranged in an insulating manner with the magnetic core 10.

The magnetic core 10 further has two long air gaps 13 and two short air gaps 13, wherein one long air gap 13 and one short air gap 13 are respectively arranged at two first through holes 11a at the front end and the rear end of the three first through holes 11a, and the other long air gap 13 and the other short air gap 13 are respectively arranged at two second through holes 11b at the front end and the rear end of the three second through holes 11b. Wherein the length of the long air gap 13 is 0.54mm, the length of the short air gap 13 is 0.1mm, and the widths of the long air gap 13 and the short air gap 13 are 10 μm.

The dimensions of the magnetic core 10 of the inductance device 100 of the present embodiment are: 1.95 mm. Times.1.5 mm. The magnetic core 10 comprises an insulator layer 18, a magnetic film sub-layer 17 and an adhesive sub-layer 19 which are sequentially and alternately laminated, wherein the number of layers of the magnetic film sub-layer 17 is 6, the thickness of each magnetic film sub-layer 17 is 6 mu m, the material of the magnetic film sub-layer 17 is FeNi soft magnetic alloy, the relative magnetic conductivity of the magnetic film sub-layer 17 is 230, and the electrical conductivity is 2353KS/m; the insulating sub-layer 18 is a polyimide layer (PI), the thickness of the insulating sub-layer 18 is 12 μm, the adhesive sub-layer 19 is an epoxy resin layer, and the thickness of the adhesive sub-layer 19 is 15 μm. The coil 30 had 3.5 turns, the line width of the coil 30 was 350 μm, the line thickness was 60 μm, and the line spacing was 120 μm. A schematic structural diagram of the magnetic core 10 of the present embodiment is shown in fig. 10.

Example 2

The inductance device 100 of the present embodiment is different from embodiment 1 in that the four air gaps 13 of the present embodiment are all short air gaps 13, wherein two short air gaps 13 are respectively disposed at two first through holes 11a at the front and rear ends of three first through holes 11a, and the other two short air gaps 13 are respectively disposed at two second through holes 11b at the front and rear ends of three second through holes 11b. Wherein the length of the air gap 13 is 0.1mm and the width of the air gap 13 is 10 μm. A schematic structural diagram of the magnetic core 10 of the present embodiment is shown in fig. 11.

Comparative example 1

The inductance device 100 of this comparative example is different from that of embodiment 1 in that the air gap 13 is not provided. A schematic structural view of the magnetic core 10 of this comparative example is shown in fig. 12.

The inductance values of example 1, example 2 and comparative example 1 were measured using GB/T8554-1998, and the test results are shown in Table 1 below. The magnetic density distribution of example 1, example 2 and comparative example 1 was simulated using Ansys Maxwell software. The magnetic flux density distribution cloud of the inductor device 100 of example 1 along the extension plane thereof is shown in fig. 13 and 14, the magnetic flux density distribution cloud of the inductor device 100 of example 2 along the extension plane thereof is shown in fig. 15 and 16, and the magnetic flux density distribution cloud of the inductor device 100 of comparative example 1 along the extension plane thereof is shown in fig. 17 and 18. The average magnetic film, the standard deviation of the magnetic density distribution, and the like of each example and comparative example are shown in table 1 below.

Table 1 parameter information of each example and comparative example

As can be seen from the test results of table 1 and fig. 13 to 18, the opening of the air gap 13 at the position of the through hole 11 reduces the inductance of the inductive device 100, and the longer the length of the air gap 13, the more the inductance of the inductive device 100 is reduced. However, the provision of the air gap 13 can improve the uniformity of the magnetic density distribution of the inductance device 100, reduce the standard deviation of the magnetic density distribution, and increase the length of the air gap 13 can make the distribution of the magnetic film more uniform, thereby increasing the anti-magnetic saturation characteristic of the inductance device 100. Therefore, the length of the air gap 13 can be balanced between the inductance and the anti-magnetic saturation property, so that the inductance device 100 has better anti-magnetic saturation property while retaining higher inductance.

Referring to fig. 19, an integrated circuit board inductor 200 is provided in the embodiment of the present application, and includes a circuit board 210 and an inductor device 100 in the embodiment of the present application, where the inductor device 100 is carried on the circuit board 210.

For a detailed description of the inductance device 100, please refer to the corresponding parts of the above embodiments, and the detailed description is omitted here.

Alternatively, the circuit board 210 may be, but is not limited to, a Printed Circuit Board (PCB) or a flexible circuit board (FPC).

Referring to fig. 20, optionally, the inductance device 100 is embedded in the circuit board 210, the circuit board 210 includes a first circuit layer 211, a first substrate layer 213, a supporting layer 215, a second substrate layer 217 and a second circuit layer 219 that are stacked in sequence, the coil 30 is partially formed on a conductive layer for preparing the first circuit layer 211 and the second circuit layer 219, and the magnetic core 10 is embedded in the supporting layer 215. It will be appreciated that the magnetic core 10 is located between the first substrate layer 213 and the second substrate layer 217. In this embodiment, the inductance device 100 is embedded in the circuit board 210, so that the internal space of the circuit board 210 can be fully utilized, thereby reducing the overall thickness of the integrated inductor 200, better saving the surface area of the circuit board 210, improving the wiring and component capacities of the circuit board 210, reducing the tedious mounting of the inductance device 100, and greatly improving the packaging efficiency. In addition, the coil 30 of the inductance device 100 is formed by the first circuit layer 211 and the second circuit layer 219 of the circuit board 210 in the process of the circuit board 210, and the embedding of the inductance device 100 can be completed in the process of the circuit board 210, so that the manufacturing process of the inductance device 100 is greatly simplified, and the production efficiency is improved. In addition, the first circuit layer 211 and the second circuit layer 219 of the circuit board 210 are used to prepare the coil 30, so that the size of the inductance device 100 can be reduced better, and particularly, the thickness of the inductance device 100 is reduced greatly, which is beneficial to miniaturization of the integrated inductance 200 of the circuit board.

Alternatively, the first wiring layer 211 may be, but is not limited to, a copper wiring layer. The second wiring layer 219 may be, but is not limited to, a copper wiring layer.

Optionally, the first wiring layer is disposed in layers with 211 the first conductive line 31, and the second wiring layer 219 is disposed in layers with the second conductive line 32.

In other embodiments, the inductor device 100 may be fabricated and then mounted on the surface of the circuit board 210 by surface mounting.

It should be understood that the integrated circuit board inductor 200 in this embodiment is only one form of integrated circuit board inductor 200 to which the inductor device 100 is applied, and should not be construed as limiting the integrated circuit board inductor 200 provided in the present application, or limiting the inductor device 100 provided in the various embodiments of the present application.

Referring to fig. 21 to 23, an embodiment of the present application provides an electronic device 500, which includes a display screen 510, an inductance device 100 of the embodiment of the present application or a circuit board integrated inductor 200 of the embodiment of the present application, and a processor 530, wherein the processor 530 is electrically connected to the circuit board integrated inductor 200 or the coil 30 in the inductance device 100, the processor 530 is used for controlling the magnitude and the direction of the current flowing through the coil 30, and the processor 530 is further electrically connected to the display screen 510 and is used for controlling the display screen 510 to display.

For a detailed description of the inductor device 100 or the integrated circuit board inductor 200, please refer to the corresponding parts of the above embodiments, and the detailed description is omitted here.

The electronic device 500 of the present embodiment may be, but is not limited to, a portable electronic device 500 such as a mobile phone, a tablet computer, a notebook computer, a desktop computer, a smart band, a smart watch, an electronic reader, a game console, etc. The electronic device 500 of the embodiment of the present application may also be at least one of a power adapter (a computer adapter, a mobile phone adapter, etc.), a mobile phone charger, etc. It should be understood that the electronic device 500 in this embodiment is only one form of the electronic device 500 applied to the inductor device 100 or the circuit board integrated inductor 200, and should not be construed as a limitation of the electronic device 500 provided in the present application, or as a limitation of the inductor device 100 or the circuit board integrated inductor 200 provided in the various embodiments of the present application.

Alternatively, the display 510 may be, but is not limited to being, one or more of a liquid crystal display, a light emitting diode display (LED display), a Micro light emitting diode display (Micro LED display), a sub-millimeter light emitting diode display (Mini LED display), an organic light emitting diode display (OLED display), etc.

Optionally, processor 530 includes one or more general-purpose processors, wherein a general-purpose processor may be any type of device capable of processing electronic instructions, including a central processing unit (Central Processing Unit, CPU), microprocessor, microcontroller, main processor, controller, ASIC, and the like. Processor 530 is used to execute various types of digitally stored instructions, such as software or firmware programs stored in memory 550, that enable the computing device to provide a wide variety of services.

Optionally, the electronic device 500 of the present application further comprises a memory 550. The memory 550 is electrically connected to the processor 530 for storing program codes required for the operation of the processor 530, program codes required for controlling the display screen 510 and the inductor device 100 or the circuit board integrated inductor 200, display contents of the display screen 510, and the like.

Alternatively, the Memory 550 may include Volatile Memory (Volatile Memory), such as random access Memory (Random Access Memory, RAM); the Memory 550 may also include a Non-Volatile Memory (NVM), such as Read-Only Memory (ROM), flash Memory (FM), hard Disk (HDD), or Solid State Drive (SSD). Memory 550 may also include combinations of the above-described types of memory.

Optionally, the electronic device 500 of the embodiment of the present application further includes a housing 520. The housing 520 and the display 510 enclose an accommodating space for accommodating the processor 530, the memory 550, and the inductor device 100 or the electronic device 500 such as the circuit board integrated inductor 200.

Reference in the present application to "an embodiment," "implementation" means that a particular feature, structure, or characteristic described in connection with the embodiment may be included in at least one embodiment of the present application. The appearances of the phrase in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. Those of skill in the art will explicitly and implicitly understand that the embodiments described herein may be combined with other embodiments. Furthermore, it should be understood that the features, structures, or characteristics described in the embodiments of the present application may be combined arbitrarily without any conflict with each other to form yet another embodiment without departing from the spirit and scope of the present application.

Finally, it should be noted that the above embodiments are merely for illustrating the technical solution of the present application and not for limiting, and although the present application has been described in detail with reference to the above preferred embodiments, it should be understood by those skilled in the art that the technical solution of the present application may be modified or equivalent replaced without departing from the spirit and scope of the technical solution of the present application.

Claims

1. An inductive device, comprising:

2. The inductive device of claim 1, wherein the width w of the air gap ranges from 5 μm to 100 μm; the length L of the air gap is in the range of 20 mu m-L-500 mu m.

3. An inductive device according to claim 2, characterized in that the width w of the air gap is in the range of 5 μm-w-30 μm; the length L of the air gap is in the range of 50 mu m-L-200 mu m.

4. An inductive device according to claim 1, characterized in that the ratio w/d of the width w of the air gap to the radial dimension d of the through hole is in the range 0.01 ∈w/d ∈0.1.

5. The inductor device of claim 1, wherein the magnetic core comprises N magnetic film sublayers and at least N-1 insulating sublayers, the magnetic film sublayers and the insulating sublayers being alternately stacked in sequence, wherein N is equal to or greater than 2 and is a positive integer; the plurality of through holes penetrate the magnetic core along a lamination direction of the magnetic film sub-layer and the insulating sub-layer.

6. The inductive device of claim 5, wherein a thickness h1 of each of said magnetic film sublayers is in a range of 0.5 μm and less than or equal to h1 and less than or equal to 10 μm, and a total thickness h of N magnetic film sublayers in said magnetic core is in a range of 5 μm and less than or equal to h and less than or equal to 500 μm; the range of the relative magnetic permeability mur 3 of the magnetic film sub-layer satisfies that mur 3 is more than or equal to 100 and less than or equal to 1000.

7. The inductor device of any one of claims 1-6, wherein the plurality of through holes comprises a plurality of first through holes and a plurality of second through holes, the plurality of first through holes are sequentially arranged at intervals along a first direction, the plurality of second through holes are sequentially arranged at intervals along the first direction, the first through holes and the second through holes are sequentially arranged at intervals along a second direction, and the coil sequentially alternately penetrates through the first through holes and the second through holes; in the first direction, the air gaps are arranged on two closest to the edge in the first through holes; two of the plurality of second through holes closest to the edge are provided with the air gaps; wherein the first direction intersects the second direction.

8. The inductive device of claim 7, wherein each turn of said coil comprises a first wire, a first electrical connector, a second wire, and a second electrical connector in series, said first wire and said second wire being disposed on opposite surfaces of said core, respectively; the inductance device further comprises a first insulating piece and a second insulating piece, wherein the first insulating piece is arranged in the first through hole and is provided with a first through hole, the first through hole is used for penetrating the first electric connecting piece, the second insulating piece is arranged in the second through hole and is provided with a second through hole, and the second through hole is used for penetrating the second electric connecting piece.

9. A circuit board integrated inductor, comprising:

a circuit board; and

the inductor device of any one of claims 1-8 embedded in the circuit board, the circuit board comprising a first circuit layer, a first substrate layer, a support layer, a second substrate layer, and a second circuit layer stacked in order, the coil portion being formed on a conductive layer for preparing the first circuit layer and the second circuit layer, the magnetic core being embedded in the support layer.

10. An electronic device, comprising:

a display screen;

the inductive device of any one of claims 1 to 8 or the circuit board integrated inductor of claim 9; and