CN117403323A - Molecular beam epitaxy apparatus and method for controlling molecular beam epitaxy apparatus - Google Patents
Molecular beam epitaxy apparatus and method for controlling molecular beam epitaxy apparatus Download PDFInfo
- Publication number
- CN117403323A CN117403323A CN202311262932.9A CN202311262932A CN117403323A CN 117403323 A CN117403323 A CN 117403323A CN 202311262932 A CN202311262932 A CN 202311262932A CN 117403323 A CN117403323 A CN 117403323A
- Authority
- CN
- China
- Prior art keywords
- vacuum pump
- valve
- activated
- growth chamber
- channel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001451 molecular beam epitaxy Methods 0.000 title claims abstract description 55
- 238000000034 method Methods 0.000 title claims abstract description 30
- 230000004913 activation Effects 0.000 claims abstract description 51
- 238000005086 pumping Methods 0.000 claims abstract description 10
- 238000007666 vacuum forming Methods 0.000 claims description 30
- 238000001179 sorption measurement Methods 0.000 claims description 26
- 230000003213 activating effect Effects 0.000 claims description 9
- 239000002826 coolant Substances 0.000 claims description 4
- 238000000407 epitaxy Methods 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 238000001994 activation Methods 0.000 description 42
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000008901 benefit Effects 0.000 description 6
- 238000004891 communication Methods 0.000 description 4
- 239000002156 adsorbate Substances 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000002831 nitrogen free-radicals Chemical class 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
The application relates to a molecular beam epitaxy device and a control method of the molecular beam epitaxy device, and belongs to the technical field of semiconductor epitaxy. Comprising the following steps: a growth chamber; the cold screen is positioned in the growth chamber; a first activated vacuum pump set for pumping the growth chamber in the case of cold screen activation; one end of the first channel is connected with the growth chamber, and the other end of the first channel is connected with the first activation vacuum pump set so as to be communicated with the growth chamber and the first activation vacuum pump set; a first valve located on the first channel; under the condition of cold screen activation, opening a first valve; otherwise, the first valve is closed. According to the technical scheme, the activation capacity can be increased.
Description
Technical Field
The present disclosure relates to the field of semiconductor epitaxy, and in particular, to a molecular beam epitaxy apparatus and a method for controlling the molecular beam epitaxy apparatus.
Background
Group III nitrides, such as gallium nitride (GaN), aluminum gallium nitride (AlGaN), and aluminum nitride (AlN), have been promising materials for high-power and high-frequency semiconductor devices for over twenty years due to many excellent properties, such as wide band gap, high breakdown field, high electron saturation velocity, etc. There are various growth techniques for the growth of group III nitride materials, including hydrochloride vapor phase epitaxy (Hydride Vapor Phase Epitaxy, HVPE), metal organic chemical vapor deposition (Metal-organic Chemical Vapor Deposition, MOCVD) and molecular beam epitaxy (Molecular beam epitaxy, MBE). The MBE has the advantage of in-situ characterization, and has the remarkable advantage of preparing high-quality III-nitride and sharp interface products due to the characteristics of ultra-high vacuum environment and low growth temperature, and has become a growth technology for the most advanced devices. There are two methods for generating nitrogen radicals in MBE: plasma Assisted MBE (PA-MBE), which uses radio frequency Plasma to provide nitrogen; and ammonia MBE (NH 3-MBE), nitrogen being provided by NH3 cleavage during growth.
For the former method, the gallium-rich condition is a necessary condition for obtaining a high quality gallium nitride layer, and the growth of PA-MBE must be as close to the stoichiometric ratio as possible, so that the stepwise growth of PAMBE occurs only in a low temperature and relatively narrow temperature range and iii/v ratio, and the production efficiency is low, resulting in extremely high cost and affecting popularization, although having great advantages in preparing a high quality interface. For the latter method, MBE of ammonia is used, a temperature window and a III/V ratio window of step flow are realized to be large, however, the growth temperature of an ammonia source is larger than that of PA-MBE, atoms are easy to diffuse mutually at an interface at high temperature, and the quality of the interface is affected.
For this reason, the inventors have been devoted to research into improving both of the above methods. During the development process, the inventors have continuously explored the possibility of combining the two approaches.
Disclosure of Invention
In view of the above, an embodiment of the present application provides a molecular beam epitaxy apparatus and a method for controlling the molecular beam epitaxy apparatus to solve at least one of the problems in the background art.
In order to achieve the above purpose, the technical scheme of the application is realized as follows:
in a first aspect, embodiments of the present application provide a molecular beam epitaxy apparatus, including:
a growth chamber;
a cold screen located within the growth chamber;
a first activated vacuum pump set for pumping the growth chamber in the case of activation of the cold screen;
one end of the first channel is connected with the growth chamber, and the other end of the first channel is connected with the first activation vacuum pump set so as to be communicated with the growth chamber and the first activation vacuum pump set;
a first valve located on the first channel; opening the first valve under the condition that the cold screen is activated; otherwise, closing the first valve.
Optionally, the molecular beam epitaxy apparatus further comprises:
at least two vacuum forming members for forming a vacuum environment of the growth chamber;
a second passage having one end connected to the growth chamber and the other end connected to the vacuum forming member to communicate the growth chamber and the vacuum forming member;
the second valve is positioned in the second channel, and is closed under the condition that the cold screen is activated; otherwise, opening the second valve.
Optionally, the vacuum forming part includes:
a first cryogenic vacuum pump;
a second activated vacuum pump set for activating the first cryopump;
one end of the third channel is connected with the first low-temperature vacuum pump, and the other end of the third channel is connected with the second activated vacuum pump set so as to be communicated with the first low-temperature vacuum pump and the second activated vacuum pump set;
the third valve is positioned in the third channel, and is opened under the condition that the first cryogenic vacuum pump is activated; otherwise, closing the third valve.
Optionally, the first activated vacuum pump set comprises:
the adsorption port of the second low-temperature vacuum pump is communicated with the first channel;
alternatively, the first activated vacuum pump set comprises:
the adsorption port of the first molecular pump is communicated with the first channel;
and the first mechanical pump is a pre-pumping pump at the front stage of the first molecular pump and is used for providing a vacuum environment required by the operation of the first molecular pump.
Optionally, the second activated vacuum pump set comprises:
the adsorption port of the third low-temperature vacuum pump is communicated with the third channel;
alternatively, the second activated vacuum pump set comprises:
the adsorption port of the second molecular pump is communicated with the third channel;
and the second mechanical pump is a pre-pumping pump at the front stage of the second molecular pump and is used for providing a vacuum environment required by the operation of the second molecular pump.
Optionally, the first mechanical pump is a dry pump.
Optionally, the first valve is a gate valve.
In a second aspect, an embodiment of the present application provides a method for controlling a molecular beam epitaxy apparatus, which is applied to any one of the molecular beam epitaxy apparatuses described above, including:
controlling the first valve to be opened;
stopping the circulation of coolant for the cold shield in the growth chamber;
starting a first activation vacuum pump set, and sucking the growth chamber to activate a cold screen in the growth chamber; and stopping the first activated vacuum pump set after the preset time is continued, and closing the first valve.
Optionally, the molecular beam epitaxy apparatus further comprises:
at least two vacuum forming members for forming a vacuum environment of the growth chamber;
a second passage having one end connected to the growth chamber and the other end connected to the vacuum forming member to communicate the growth chamber and the vacuum forming member;
the second valve is positioned in the second channel, and is closed under the condition that the cold screen is activated; otherwise, opening the second valve;
before said controlling the first valve to open, the method further comprises:
closing the second valve.
Optionally, the vacuum forming part includes:
a first cryogenic vacuum pump;
a second activated vacuum pump set for activating the first cryopump;
one end of the third channel is connected with the first low-temperature vacuum pump, and the other end of the third channel is connected with the second activated vacuum pump set so as to be communicated with the first low-temperature vacuum pump and the second activated vacuum pump set;
the third valve is positioned in the third channel, and is opened under the condition that the first cryogenic vacuum pump is activated; otherwise, closing the third valve;
the method further comprises the steps of:
closing the first valve and the second valve;
opening the third valve;
stopping the refrigerator in the first cryogenic vacuum pump;
starting the second activated vacuum pump group, and sucking the first cryogenic vacuum pump to activate the first cryogenic vacuum pump; and stopping the second activated vacuum pump set after the preset time is continued, closing the third valve, and opening the second valve.
The molecular beam epitaxy apparatus and the control method of the molecular beam epitaxy apparatus include: a growth chamber; a cold screen located within the growth chamber; a first activated vacuum pump set for pumping the growth chamber in the case of activation of the cold screen; one end of the first channel is connected with the growth chamber, and the other end of the first channel is connected with the first activation vacuum pump set so as to be communicated with the growth chamber and the first activation vacuum pump set; a first valve located on the first channel; opening the first valve under the condition that the cold screen is activated; otherwise, closing the first valve. Therefore, the molecular beam epitaxy device and the control method of the molecular beam epitaxy device increase the activation capacity by arranging the first activation vacuum pump set, and then the first activation vacuum pump set can be quickly connected or disconnected by the first valve.
Additional aspects and advantages of the application will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the application.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiments of the application and together with the description serve to explain the application and do not constitute an undue limitation to the application. In the drawings:
fig. 1 is a schematic diagram of a molecular beam epitaxy apparatus according to an embodiment of the present application;
FIG. 2 is a schematic diagram of another molecular beam epitaxy apparatus according to an embodiment of the present disclosure;
fig. 3 is a flow chart of a control method of a molecular beam epitaxy apparatus according to an embodiment of the present application.
Reference numerals illustrate:
10. a growth chamber; 11. a cold screen; 20. a first activated vacuum pump set; 21. a first molecular pump; 22. a first mechanical pump; 31. a first channel; 32. a first valve; 41. a first cryogenic vacuum pump; 42. a second molecular pump; 43. a second mechanical pump; 44. a third channel; 45. a third valve; 51. a second channel; 52. and a second valve.
Detailed Description
In order to make the technical solution and the beneficial effects of the present application more obvious and understandable, the following detailed description is given by way of example only. Wherein the drawings are not necessarily to scale, and wherein local features may be exaggerated or reduced to more clearly show details of the local features; unless defined otherwise, technical and scientific terms used herein have the same meaning as technical and scientific terms in the technical field to which this application belongs.
In the description of the present application, the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "height", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are merely for convenience in simplifying the description of the present application, and do not indicate that the device or element in question must have a specific orientation, be configured and operated in a specific orientation, i.e., should not be construed as limiting the present application.
In this application, the terms "first", "second" and "second" are used for clarity only and are not to be construed as relative importance of the features indicated or the number of technical features indicated. Thus, a feature defining "first", "second" may explicitly include at least one such feature. In the description of the present application, the meaning of "plurality" is at least two, such as two, three, etc.; "plurality" means at least one, such as one, two, three, etc.; unless otherwise specifically defined.
In this application, the terms "mounted," "connected," "secured," "disposed," and the like are to be construed broadly, unless otherwise specifically limited. For example, "connected" may be either fixedly connected or detachably connected, or integrally formed; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, or can be communicated between two elements or the interaction relationship between the two elements. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art as the case may be.
In this application, unless expressly defined otherwise, a first feature "on", "above", "over" and "above", "below", "under" or "beneath" a second feature may be a direct contact between the first feature and the second feature, or an indirect contact between the first feature and the second feature via an intervening medium. Moreover, a first feature "above," "over" and "on" a second feature may be that the first feature is directly above or obliquely above the second feature, or simply indicates that the level of the first feature is higher than the level of the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the level of the first feature is less than the level of the second feature.
For a thorough understanding of the present application, detailed steps and detailed structures will be presented in the following description in order to explain the technical aspects of the present application. Preferred embodiments of the present application are described in detail below, however, the present application may have other implementations in addition to these detailed descriptions.
In the prior art, both PA-MBE and NH3-MBE have respective disadvantages. Accordingly, the inventors have been devoted to research into improving both of the above methods. During the development process, the inventors have continuously explored the possibility that two approaches can be combined: ions required for epitaxy are obtained by radio frequency high voltage discharge and also by pyrolysis, and can be called mixed MBE.
However, during the production process of the mixed MBE, a large amount of gas, such as ammonia gas, is involved, and the ammonia gas is adsorbed on the cold screen 11 of the growth chamber 10 and on the vacuum pump for vacuum preparation of the growth chamber 10, so that the adsorption capacity of the cold screen 11 and the vacuum pump is often reduced in a short time, which affects the efficiency of epitaxial growth. Therefore, the shortcomings of the two MBEs are solved, and new problems are generated, so that the inventor provides the following technical solutions after further research and development.
Example 1
An embodiment of the present application provides a molecular beam epitaxy apparatus, as shown in fig. 1, including:
a growth chamber 10;
a cold screen 11 positioned within the growth chamber 10;
a first activated vacuum pump group 20 for pumping the growth chamber 10 in the case of activation of the cold screen 11;
a first channel 31, one end of which is connected to the growth chamber 10, and the other end of which is connected to the first activated vacuum pump set 20, so as to communicate the growth chamber 10 with the first activated vacuum pump set 20;
a first valve 32 located on the first channel 31; opening the first valve 32 in case the cold screen 11 is activated; otherwise, the first valve 32 is closed.
It will be appreciated that the cold plate 11 is an important component for increasing the vacuum degree of the growth chamber 10 by generating an adsorption force at a low temperature. However, after a long period of time, many adsorbates are adsorbed on the cold screen 11, resulting in a decrease in adsorption capacity, and thus activation is required. And more adsorbates per unit time of mixed MBE, thus requiring more frequent activation and longer time per activation, thus reducing the efficiency of production.
The activation is a maintenance method for raising the adsorption force, which is performed in the vacuum chamber or the vacuum equipment at regular or irregular intervals. The activation process may include raising the temperature of cold screen 11, solidifying at a low temperature, i.e. liquefying the adsorbed material, and then sucking it away by other adsorption means. The adsorbed substances adsorbed in the vacuum chamber or the vacuum equipment can be removed by activation, so that the vacuum chamber or the vacuum equipment is cleaner and free of impurities, and the adsorption capacity is improved. This activation is necessary for the cold screen 11 of the growth chamber 10 to maintain good adsorption capacity and to make the vacuum relatively stable. However, the activation of the cold screen 11 must stop production, and thus the production efficiency is lowered.
In the embodiment of the application, the first activation vacuum pump set 20 is additionally arranged, so that the activation capacity is increased, the activation can be completed more quickly, the activation efficiency is improved, the activation is more thorough, and the activation frequency is reduced. The first activated vacuum pump set 20 can then be quickly turned on and off via the first valve 32.
In some embodiments, referring to fig. 2, the molecular beam epitaxy apparatus further includes:
at least two vacuum forming means for forming a vacuum environment of the growth chamber 10;
a second passage 51 having one end connected to the growth chamber 10 and the other end connected to the vacuum forming member to communicate the growth chamber 10 with the vacuum forming member;
a second valve 52 located in the second channel 51, and closing the second valve 52 when the cold screen 11 is activated; otherwise, the second valve 52 is opened.
By at least two vacuum forming members, the vacuum degree of the growth chamber 10 can be further increased, and the frequency of activation of the cold plate 11 can be reduced. And, the communication between the vacuum forming member and the growth chamber 10 can be closed by the second valve 52, so that the activation space can be reduced and the activation efficiency can be improved.
In some embodiments, the vacuum forming component comprises:
a first cryopump 41;
a second activated vacuum pump unit for activating the first cryopump 41;
a third channel 44, one end of which is connected to the first cryopump 41 and the other end of which is connected to the second pump set, so as to communicate the first cryopump 41 with the second pump set;
a third valve 45 located in the third passage 44, and opening the third valve 45 when the first cryopump 41 is activated; otherwise, the third valve 45 is closed.
With cold screen 11, the adsorbate of the cryopump is also greatly increased in the mixed MBE. By means of the second activated vacuum pump group, the adsorption capacity of the cryogenic vacuum pump can be improved, and the activation frequency of the cold screen 11 can be reduced. In addition, the first cryopump 41 of the two vacuum forming parts may be activated in turn, and in the case where only one of the first cryopump 41 is activated, the other first cryopump 41 may normally operate, so that the growth chamber 10 does not need to be stopped, and the production efficiency is improved.
In some embodiments, the first activated vacuum pump set 20 comprises:
a second cryogenic vacuum pump, the adsorption port being in communication with the first channel 31;
alternatively, the first activated vacuum pump unit 20 includes:
a first molecular pump 21, the adsorption port is communicated with the first channel 31;
the first mechanical pump 22 is a pre-pumping pump in front of the first molecular pump 21, and is used for providing a vacuum environment required by the operation of the first molecular pump 21.
The low-temperature vacuum pump has strong adsorption capacity and can be used as an activated vacuum pump. But the cryopump itself may also require periodic or non-periodic activation.
The molecular pump and the mechanical pump can also have larger adsorption capacity, can be used as an activated vacuum pump set, and also do not need to be activated, thereby having low cost.
In some embodiments, the second activated vacuum pump set comprises:
a third cryopump, the adsorption port being in communication with the third passage 44;
alternatively, the second activated vacuum pump set comprises:
a second molecular pump 42, the adsorption port is communicated with the third channel 44;
a second mechanical pump 43, a pre-pump of the second molecular pump 42, is used to provide the vacuum environment required for the operation of the second molecular pump 42.
The low-temperature vacuum pump has strong adsorption capacity and can be used as an activated vacuum pump. That is, the third cryopump may activate the first cryopump 41, and the same type of vacuum pumps may activate each other.
The molecular pump and the mechanical pump can also have larger adsorption capacity, can be used as an activated vacuum pump set, and have low cost and do not need to be activated.
In some embodiments, the first mechanical pump 22 is a dry pump.
The dry pump has the advantages of long continuous operation time, no process pollution, high reliability, easy maintenance and the like. Likewise, the second mechanical pump may also be a dry pump.
In some embodiments, the first valve 32 is a gate valve.
The gate valve has the advantages of quick and convenient opening and small fluid passing resistance, and can improve the activation efficiency.
Similarly, the second valve 52 and the third valve 45 may be gate valves.
Example two
An embodiment of the present application provides a method for controlling a molecular beam epitaxy device, which is applied to the molecular beam epitaxy device in the first embodiment, as shown in fig. 3, and includes:
step 801: controlling the first valve 32 to open;
step 802: stopping the circulation of the coolant of the cold screen 11 inside the growth chamber 10;
step 803: activating a first activating vacuum pump group 20 to suck the growth chamber 10 so as to activate a cold screen 11 in the growth chamber 10; after a predetermined time, the first activated vacuum pump set 20 is stopped and the first valve 32 is closed.
It will be appreciated that the method may be implemented by a control unit, which may be a general purpose processor, a Digital Signal Processor (DSP), a Field Programmable Gate Array (FPGA), or other programmable logic device, discrete gate or transistor logic, discrete hardware components, or the like. The control component may be a general control component of the molecular beam epitaxy apparatus.
In step 801, the first valve 32 may be an electrically operated valve that is controllable by a control component. After opening the first valve 32, the first activated vacuum pump set 20 communicates with the growth chamber 10.
After step 802 is performed, the temperature of growth chamber 10 may be gradually increased to liquefy the adsorbed species. The coolant may be liquid nitrogen.
In step 803, the preset time may be a time when activation can be completed.
The first activation vacuum pump set 20 is additionally arranged in the embodiment of the application, so that the activation capacity is increased, the activation can be completed more quickly, the activation efficiency is improved, the activation is more thorough, and the activation frequency is reduced. The first activated vacuum pump set 20 can then be quickly turned on and off via the first valve 32.
In some embodiments, the molecular beam epitaxy apparatus further comprises:
at least two vacuum forming means for forming a vacuum environment of the growth chamber 10;
a second passage 51 having one end connected to the growth chamber 10 and the other end connected to the vacuum forming member to communicate the growth chamber 10 with the vacuum forming member;
a second valve 52 located in the second channel 51, and closing the second valve 52 when the cold screen 11 is activated; otherwise, opening the second valve 52;
before the controlling the first valve 32 to open, the method further comprises:
the second valve 52 is closed.
By at least two vacuum forming members, the vacuum degree of the growth chamber 10 can be further increased, and the frequency of activation of the cold plate 11 can be reduced. And, the communication between the vacuum forming member and the growth chamber 10 can be closed by the second valve 52, so that the activation space can be reduced and the activation efficiency can be improved.
In some embodiments, the vacuum forming component comprises:
a first cryopump 41;
a second activated vacuum pump unit for activating the first cryopump 41;
a third channel 44, one end of which is connected to the first cryopump 41 and the other end of which is connected to the second pump set, so as to communicate the first cryopump 41 with the second pump set;
a third valve 45 located in the third passage 44, and opening the third valve 45 when the first cryopump 41 is activated; otherwise, closing the third valve 45;
the method further comprises the steps of:
closing the first valve 32 and the second valve 52;
opening the third valve 45;
stopping the refrigerator in the first cryopump 41;
activating the second activated vacuum pump unit to suck the first cryopump 41 to activate the first cryopump 41; after a preset time, the second activated vacuum pump set is stopped, the third valve 45 is closed, and the second valve 52 is opened.
By means of the second activated vacuum pump group, the adsorption capacity of the cryogenic vacuum pump can be improved, and the activation frequency of the cold screen 11 can be reduced. In addition, the first cryopump 41 of the two vacuum forming parts may be activated in turn, and in the case where only one of the first cryopump 41 is activated, the other first cryopump 41 may normally operate, so that the growth chamber 10 does not need to be stopped, and the production efficiency is improved.
The cryogenic vacuum pump generates adsorption force by the low temperature, which can be generated by the refrigerator. Further, the cryopump may also be configured to provide a low temperature through the circulating refrigerant. The cryogen may be liquid helium.
It should be understood that the above examples are illustrative and are not intended to encompass all possible implementations encompassed by the claims. Various modifications and changes may be made in the above embodiments without departing from the scope of the disclosure. Likewise, the various features of the above embodiments may be combined arbitrarily to form further embodiments of the application that may not be explicitly described. Thus, the above examples merely represent several embodiments of the present application and do not limit the scope of protection of the patent of the present application.
Claims (10)
1. A molecular beam epitaxy apparatus, comprising:
a growth chamber;
a cold screen located within the growth chamber;
a first activated vacuum pump set for pumping the growth chamber in the case of activation of the cold screen;
one end of the first channel is connected with the growth chamber, and the other end of the first channel is connected with the first activation vacuum pump set so as to be communicated with the growth chamber and the first activation vacuum pump set;
a first valve located on the first channel; opening the first valve under the condition that the cold screen is activated; otherwise, closing the first valve.
2. The molecular beam epitaxy apparatus of claim 1, further comprising:
at least two vacuum forming members for forming a vacuum environment of the growth chamber;
a second passage having one end connected to the growth chamber and the other end connected to the vacuum forming member to communicate the growth chamber and the vacuum forming member;
the second valve is positioned in the second channel, and is closed under the condition that the cold screen is activated; otherwise, opening the second valve.
3. The molecular beam epitaxy apparatus of claim 2, wherein the vacuum forming means comprises:
a first cryogenic vacuum pump;
a second activated vacuum pump set for activating the first cryopump;
one end of the third channel is connected with the first low-temperature vacuum pump, and the other end of the third channel is connected with the second activated vacuum pump set so as to be communicated with the first low-temperature vacuum pump and the second activated vacuum pump set;
the third valve is positioned in the third channel, and is opened under the condition that the first cryogenic vacuum pump is activated; otherwise, closing the third valve.
4. The molecular beam epitaxy apparatus of claim 3, wherein the first activation vacuum pump set comprises:
the adsorption port of the second low-temperature vacuum pump is communicated with the first channel;
alternatively, the first activated vacuum pump set comprises:
the adsorption port of the first molecular pump is communicated with the first channel;
and the first mechanical pump is a pre-pumping pump at the front stage of the first molecular pump and is used for providing a vacuum environment required by the operation of the first molecular pump.
5. The molecular beam epitaxy apparatus of claim 3, wherein the second activated vacuum pump set comprises:
the adsorption port of the third low-temperature vacuum pump is communicated with the third channel;
alternatively, the second activated vacuum pump set comprises:
the adsorption port of the second molecular pump is communicated with the third channel;
and the second mechanical pump is a pre-pumping pump at the front stage of the second molecular pump and is used for providing a vacuum environment required by the operation of the second molecular pump.
6. The molecular beam epitaxy apparatus of claim 4, wherein the first mechanical pump is a dry pump.
7. The molecular beam epitaxy apparatus of claim 1, wherein the first valve is a gate valve.
8. A method of controlling a molecular beam epitaxy apparatus, applied to a molecular beam epitaxy apparatus according to any one of claims 1 to 7, comprising:
controlling the first valve to be opened;
stopping the circulation of coolant for the cold shield in the growth chamber;
starting a first activation vacuum pump set, and sucking the growth chamber to activate a cold screen in the growth chamber; and stopping the first activated vacuum pump set after the preset time is continued, and closing the first valve.
9. The method of controlling a molecular beam epitaxy apparatus according to claim 8, wherein the molecular beam epitaxy apparatus further comprises:
at least two vacuum forming members for forming a vacuum environment of the growth chamber;
a second passage having one end connected to the growth chamber and the other end connected to the vacuum forming member to communicate the growth chamber and the vacuum forming member;
the second valve is positioned in the second channel, and is closed under the condition that the cold screen is activated; otherwise, opening the second valve;
before said controlling the first valve to open, the method further comprises:
closing the second valve.
10. The method of controlling a molecular beam epitaxy apparatus according to claim 9, wherein the vacuum forming means comprises:
a first cryogenic vacuum pump;
a second activated vacuum pump set for activating the first cryopump;
one end of the third channel is connected with the first low-temperature vacuum pump, and the other end of the third channel is connected with the second activated vacuum pump set so as to be communicated with the first low-temperature vacuum pump and the second activated vacuum pump set;
the third valve is positioned in the third channel, and is opened under the condition that the first cryogenic vacuum pump is activated; otherwise, closing the third valve;
the method further comprises the steps of:
closing the first valve and the second valve;
opening the third valve;
stopping the refrigerator in the first cryogenic vacuum pump;
starting the second activated vacuum pump group, and sucking the first cryogenic vacuum pump to activate the first cryogenic vacuum pump; and stopping the second activated vacuum pump set after the preset time is continued, closing the third valve, and opening the second valve.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311262932.9A CN117403323A (en) | 2023-09-27 | 2023-09-27 | Molecular beam epitaxy apparatus and method for controlling molecular beam epitaxy apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311262932.9A CN117403323A (en) | 2023-09-27 | 2023-09-27 | Molecular beam epitaxy apparatus and method for controlling molecular beam epitaxy apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117403323A true CN117403323A (en) | 2024-01-16 |
Family
ID=89497048
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311262932.9A Pending CN117403323A (en) | 2023-09-27 | 2023-09-27 | Molecular beam epitaxy apparatus and method for controlling molecular beam epitaxy apparatus |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117403323A (en) |
-
2023
- 2023-09-27 CN CN202311262932.9A patent/CN117403323A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8742426B2 (en) | Semiconductor device | |
| Edgar et al. | related Semiconductors | |
| US11637197B2 (en) | Epitaxial structure of GaN-based radio frequency device based on Si substrate and its manufacturing method | |
| CN107354428A (en) | The aluminum nitride buffer layer and active layer formed by physical vapour deposition (PVD) | |
| JP6326154B2 (en) | Method for producing nonpolar blue LED epitaxial wafer based on LaAlxOy substrate | |
| US20090176352A1 (en) | Semiconductor device, method of manufacturing the same, and substrate for manufacturing the same | |
| US20190317125A1 (en) | Microscopy sample stage for gas hydrate tests and temperature and pressure controlling system of the stage | |
| US20120025202A1 (en) | Semiconductor device and method for fabricating the same | |
| JP2009124156A (en) | Mbe apparatus and method of its operation | |
| JP2013229493A (en) | Group-iii nitride semiconductor stacked substrate and group-iii nitride semiconductor field-effect transistor | |
| JPH09312267A (en) | Manufacture of semiconductor device and manufacturing device therefor | |
| CN106711022A (en) | Preparation method for growing silicon carbide epitaxial film with clear doping interface | |
| JP2015099866A (en) | Manufacturing device and manufacturing method of group iii nitride semiconductor device; and manufacturing method of semiconductor wafer | |
| CN117403323A (en) | Molecular beam epitaxy apparatus and method for controlling molecular beam epitaxy apparatus | |
| KR20080034022A (en) | Method for forming film of group iii nitride such as gallium nitride | |
| AU2018391121A1 (en) | N-polar plane high-frequency GaN rectifier epitaxial structure on silicon substrate and manufacturing method therefor | |
| CN1120901C (en) | Electronically cyclic resonating, microwave plasma reinforcing and metal and organic chemically vapor-phase depositing epitaxial system and technology | |
| CN104846438A (en) | Growth method of aluminum indium nitride film | |
| JPH09298159A (en) | Semiconductor manufacturing method and semiconductor manufacturing apparatus | |
| CN115799332B (en) | Polar silicon-based high electron mobility transistor and preparation method thereof | |
| CN104264219A (en) | Epitaxial preparation method for base region gradually doped silicon carbide film | |
| CN110838514B (en) | Epitaxial structure of semiconductor device, preparation method of epitaxial structure and semiconductor device | |
| CN117404311A (en) | Adsorption device, molecular beam epitaxy equipment and control method of adsorption device | |
| JP5044860B2 (en) | Method for forming group III nitride such as gallium nitride | |
| CN102803579A (en) | Apparatus for depositing a thin film of material on a substrate and regeneration process for such an apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |