CN117394707A - High-frequency synchronous rectification switching power supply device - Google Patents
High-frequency synchronous rectification switching power supply device Download PDFInfo
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- CN117394707A CN117394707A CN202311311684.2A CN202311311684A CN117394707A CN 117394707 A CN117394707 A CN 117394707A CN 202311311684 A CN202311311684 A CN 202311311684A CN 117394707 A CN117394707 A CN 117394707A
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- 230000001360 synchronised effect Effects 0.000 title claims abstract description 57
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 38
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 38
- 238000006243 chemical reaction Methods 0.000 claims abstract description 20
- 230000009123 feedback regulation Effects 0.000 claims abstract description 14
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 claims abstract description 10
- 230000033228 biological regulation Effects 0.000 claims abstract description 8
- 239000003990 capacitor Substances 0.000 claims description 58
- 230000001105 regulatory effect Effects 0.000 claims description 9
- 230000000630 rising effect Effects 0.000 claims description 5
- 239000003381 stabilizer Substances 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 230000005669 field effect Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HEZMWWAKWCSUCB-PHDIDXHHSA-N (3R,4R)-3,4-dihydroxycyclohexa-1,5-diene-1-carboxylic acid Chemical compound O[C@@H]1C=CC(C(O)=O)=C[C@H]1O HEZMWWAKWCSUCB-PHDIDXHHSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
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- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M7/219—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a bridge configuration
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
- H02M1/0054—Transistor switching losses
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/44—Circuits or arrangements for compensating for electromagnetic interference in converters or inverters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Dc-Dc Converters (AREA)
- Rectifiers (AREA)
Abstract
The invention relates to a high-frequency synchronous rectification switching power supply device, which comprises a DC/DC conversion unit, a feedback regulation unit, a frequency regulation unit and a dead zone regulation unit, wherein the input end of the DC/DC conversion unit is connected with direct-current voltage, the DC/DC conversion unit comprises a signal generation unit, a gallium nitride driving unit and a synchronous BUCK circuit, the input end of the signal generation unit is connected with the direct-current voltage, the output end of the signal generation unit is connected with the input end of the gallium nitride driving unit, the output end of the gallium nitride driving unit is connected with the synchronous BUCK circuit, the upper bridge arm and the lower bridge arm of the synchronous BUCK circuit are gallium nitride, and the output end of the synchronous BUCK circuit is connected with the feedback regulation unit. Compared with the prior art, the invention has the advantages of improving the working efficiency of the switching power supply and the like.
Description
Technical Field
The invention relates to the technical field of rectification switching power supplies, in particular to a high-frequency synchronous rectification switching power supply device.
Background
The most common switching tube of the synchronous rectification switching power supply at present adopts a silicon-based MOSFET, and because the on resistance and parasitic capacitance of the silicon-based MOSFET are large, the switching tube using the silicon-based MOSFET as the switching tube of the synchronous rectification is difficult to further improve the conversion efficiency of the circuit, and the switching tube cannot work at the frequency of megahertz, and the size of the circuit is difficult to further reduce. Meanwhile, because the voltage withstand voltage of the MOSFET is not high, when a synchronous rectification conversion circuit with high voltage reduction ratio is needed, for example, a server supplies power, the traditional method is realized by adopting a two-stage topology, the first stage usually adopts LLC, half-bridge and other topologies, 48V line voltage is converted into 12V, then the second stage adopts a voltage reduction chopper circuit, and then 12V is converted into 5V, so that MOSFET breakdown caused by the high voltage reduction ratio can be avoided. This makes it difficult to achieve overall high efficiency, as the two-stage circuit represents the product of its overall efficiency for each stage.
In summary, in the synchronous rectification switch power supply, silicon-based MOSFET switch loss and conduction loss are large, efficiency can be reduced, in addition, the existing synchronous rectification switch power supply generally adopts MCU to control dead time, and when the high-frequency synchronous rectification switch power supply works at a large voltage, the MCU can be greatly influenced, so that the dead time cannot be accurately regulated.
Disclosure of Invention
The present invention has been made to overcome the above problems, and an object of the present invention is to provide a high-frequency synchronous rectification switching power supply device.
The aim of the invention can be achieved by the following technical scheme:
the high-frequency synchronous rectification switching power supply device comprises a DC/DC conversion unit, a feedback regulation unit, a frequency regulation unit and a dead zone regulation unit, wherein the input end of the DC/DC conversion unit is connected with direct-current voltage,
the DC/DC conversion unit comprises a signal generation unit, a gallium nitride driving unit and a synchronous BUCK circuit, wherein the input end of the signal generation unit is connected with direct-current voltage, the output end of the signal generation unit is connected with the input end of the gallium nitride driving unit, the output end of the gallium nitride driving unit is connected with the synchronous BUCK circuit, the upper bridge arm and the lower bridge arm of the synchronous BUCK circuit are gallium nitride, and the output end of the synchronous BUCK circuit is connected with the feedback regulation unit.
Further, the signal generating unit comprises a control chip, an SS pin of the control chip is connected with a capacitor C1, an output voltage pin of an error amplifier of the control chip is connected with a capacitor C2, a capacitor C3 and a resistor R2, the capacitor C3 and the resistor R2 are mutually connected in series and then connected with the capacitor C2 in parallel, a working mode selection pin of the control chip, a charge pump enabling pin, an external synchronous input port of the control chip are connected with a phase detector, a DRVCC regulating program pin, a UVLO regulating program pin, an output pin of an internal 5V low voltage drop regulator and an overvoltage locking input pin are connected with a capacitor C4, an open-drain logic output voltage pin of the control chip is connected with a working mode selection pin through a resistor R3, an output pin of the internal or external low voltage drop regulator of the control chip and a driving output pin of an external device of the linear voltage regulator are connected with a capacitor C7, the capacitor C7 is grounded, an operation control input pin of the control chip and a main power supply pin of the control chip are connected with direct current voltage, and a grounding pin of the control chip is grounded.
Further, the gallium nitride driving unit comprises a driving chip, an enabling pin of a forbidden driver of the driving chip is connected with direct-current voltage through a resistor R5, an upper tube driving rising voltage pin and an upper tube driving falling voltage pin of the driving chip are respectively connected with a resistor R7 and a resistor R8, the resistor R7 and the resistor R8 are respectively connected with a grid electrode of an upper tube G1 of the synchronous BUCK circuit, a lower tube driving rising voltage pin and a lower tube driving falling voltage pin of the driving chip are respectively connected with a resistor R9 and a resistor R10, and the resistor R9 and the resistor R10 are respectively connected with a grid electrode of a lower tube G2 of the synchronous BUCK circuit;
the low-side driving positive bias voltage output pin of the driving chip is connected with a capacitor C11, and the capacitor C11 is grounded;
a bootstrap positive bias voltage pin of the driving chip and a high-side driving positive bias voltage output pin are connected in series with a capacitor C9 and a capacitor C10, a connection point between the capacitor C9 and the capacitor C10 is connected with a switch node pin of the driving chip, the bootstrap positive bias voltage pin of the driving chip is connected with a cathode of a diode D1, an anode of the diode D1 is connected with a resistor R4, and the resistor R4 is connected with direct current voltage;
the switch node pin of the driving chip is connected with the switch node pin of the control chip, and the switch node pin of the driving chip is connected with the bootstrap power supply pin of the top floating driver of the control chip through a capacitor C6;
the logic input pin of the high-side grid driving output of the driving chip is connected with the high-current grid driving output pin of the upper tube N-channel MOSFET of the control chip, and the logic input pin of the low-side grid driving output of the driving chip is connected with the high-current grid driving output pin of the lower tube synchronous N-channel MOSFET of the control chip;
the signal grounding pin and the power grounding pin of the driving chip are grounded, and the bias voltage of the high-current driver of the driving chip is grounded to direct-current voltage.
Further, the synchronous BUCK circuit comprises an upper tube G1, a lower tube G2, an inductor L1 and a capacitor C12, wherein the source electrode of the upper tube G1 is connected with the drain electrode of the lower tube G2, the drain electrode of the upper tube G1 is connected with direct-current voltage, the source electrode of the lower tube G2 is grounded, one end of the inductor L1 is connected with a switch node pin of a driving chip, and meanwhile, the connection part of the capacitor C5 and a (+) input pin of a differential current comparator of a control chip is connected, and the capacitor C5 is connected with the (+) input pin of the differential current comparator and a (-) input pin of the differential current comparator of the control chip;
the other end of the inductor L1 is respectively connected with the (-) input pin of the differential current comparator of the control chip and the external power input pin of the linear voltage stabilizer of the control chip, and meanwhile, the other end of the inductor L1 is connected with the capacitor C12, and the capacitor C12 is grounded.
Further, the frequency adjusting unit comprises a resistor R1, one end of the resistor R1 is grounded, and the other end of the resistor R1 is connected with a frequency adjusting pin of the control chip.
Further, the dead zone adjusting unit comprises a capacitor C8 and a resistor R6 which are connected in parallel, one end of the capacitor C8 and one end of the resistor R6 which are connected in parallel are grounded, and the other end of the capacitor C8 and the resistor R6 are connected with a dead zone adjusting pin of the driving chip.
Further, the feedback regulation unit comprises a resistor R11 and a resistor R12 which are connected in series, one end of the resistor R11 is connected with the other end of the inductor L1, the other end of the resistor R11 is connected with the resistor R12, and the other end of the resistor R12 is grounded.
Further, a feedback input pin of the control chip is connected to a connection part between the resistor R11 and the resistor R12.
Further, the device further comprises a socket P1, a first input end of the socket P1 is connected with the other end of the inductor L1, and a second input end of the socket P1 is grounded.
Further, the model of the control chip is LTC7801, and the model of the driving chip is NCP51810.
Compared with the prior art, the invention has the following beneficial effects:
the invention replaces the traditional silicon-based MOSFET with the gallium nitride FET, can realize higher switching frequency, reduce the loss of the circuit, reduce the volume of the circuit, improve the power density of the circuit, ensure that the circuit can work normally when the frequency of PWM waves reaches upper megahertz, and in addition, the dead time is controlled by the dead time adjusting unit instead of MCU, thereby avoiding the MCU from being influenced, flexibly adjusting the dead time, simplifying the circuit, flexibly reducing the dead time and improving the conversion efficiency of the circuit.
Drawings
FIG. 1 is a schematic diagram of a circuit structure of the present invention;
FIG. 2 is a graph showing the relationship between the value of the resistor R1 in the frequency adjustment unit and the operating frequency of the control chip;
FIG. 3 is a 2MHz gallium nitride drive signal;
wherein, 1DC/DC converting unit, 2 feedback regulating unit, 3 frequency regulating unit, 4 dead zone regulating unit.
Detailed Description
The invention will now be described in detail with reference to the drawings and specific examples. The present embodiment is implemented on the premise of the technical scheme of the present invention, and a detailed implementation manner and a specific operation process are given, but the protection scope of the present invention is not limited to the following examples.
The pin explanations of the chips employed in the present invention are shown in tables 1 and 2:
TABLE 1 LTC7801 Pin interpretation
TABLE 2 NCP51810 Pin interpretation
The invention provides a high-frequency synchronous rectification switching power supply device, a circuit diagram of which is shown in figure 1, and the invention uses new material gallium nitride to replace the traditional silicon-based MOSFET to improve the overall efficiency of the circuit and reduce the volume of the circuit, thereby effectively solving the defects of large parasitic capacitance, large on-resistance, large circuit volume, small withstand voltage between source and drain electrodes and the like of the traditional silicon-based MOSFET. The gallium nitride element is used in a synchronous rectification circuit to replace a MOSFET, and the parasitic capacitance is small, so that the on and off time is greatly shortened, and the gallium nitride element can work at the frequency of upper megahertz. Meanwhile, because the on-resistance of the gallium nitride is small, the loss of the gallium nitride in the process of switching on and off and on is also greatly reduced, and the conversion efficiency of the circuit can be effectively improved.
In this embodiment, since the gallium nitride device needs to be driven to operate, NCP51810 is selected as the driving chip of gallium nitride. It can generate PWM waves with dead zones, and the dead time is adjustable. PWM waves with dead zones can prevent gallium nitride burnout of the half-bridge topology. The response speed is high, the propagation delay is short, the rising is 2ns, and the falling is 1.5ns. The gallium nitride can be rapidly turned on and off.
Meanwhile, the voltage input of the server is 48V, the output voltage is 5V, the server belongs to a large-voltage working state, a general MCU control chip cannot be selected, and the working frequency of the synchronous rectification switching power supply is megahertz level, so that a signal controller with better performance is needed, and therefore, the LTC7801 is selected. The PWM wave generator can generate PWM waves with adjustable frequency and amplitude, has a feedback regulation function, is matched with a feedback regulation unit, and regulates input voltage by detecting output signals. When the output voltage does not reach the set value, the detection circuit will feed back to the LTC7801 to correct the input voltage, so as to achieve closed-loop control.
The high-frequency synchronous rectification switching power supply device of the present invention includes a DC/DC conversion unit 1, a feedback adjustment unit 2, a frequency adjustment unit 3, and a dead zone adjustment unit 4.
The DC/DC conversion unit is used for converting direct-current voltage supplied by the power supply into specific PWM direct-current voltage and outputting the specific PWM direct-current voltage; the feedback regulation unit is used for detecting the output load voltage and feeding back the load voltage to the DC/DC conversion unit so as to regulate the output of the PWM signal; the frequency adjusting unit is used for adjusting the switching frequency of the circuit so as to be suitable for different occasions, and the frequency can be downward compatible; the dead zone adjusting unit is used for adjusting PWM signals so that gallium nitride upper and lower tubes in the synchronous BUCK topology cannot burn out when being switched on and switched off.
The DC/DC conversion unit comprises a signal generation unit, a gallium nitride driving unit and a synchronous BUCK circuit. The signal generating unit converts an input direct-current power supply into PWM waves for output, and adopts an LTC7801 chip; the driving unit of gallium nitride further processes the PWM wave generated by the signal generating unit, amplifies the power of the PWM wave to control the on and off of the upper bridge arm and the lower bridge arm in the synchronous BUCK, and adopts NCP51810 driving chips; gallium nitride of upper and lower bridge arms in the synchronous BUCK circuit adopts GS66504B.
The feedback regulation unit consists of two resistors R11 and R12 connected in series, and the obtained voltage is fed back to the LTC7801 through series voltage division. One end of the resistor R11 is connected with the output end of the DCDC conversion unit, and the other end of the resistor R11 is grounded after passing through the resistor R12. The junction between resistors R11 and R12 outputs a sense voltage signal that is coupled to the VFB port of LTC7801.
The frequency adjusting unit mainly comprises a resistor R3, one end of the resistor R3 is connected to the FREQ pin of the LTC7801, and the other end of the resistor R3 is connected to the ground.
The dead zone adjusting unit mainly comprises a resistor R4, one end of the resistor R4 is connected to the DT pin of the NCP51810, and the other end of the resistor R4 is connected to the ground.
The gallium nitride FET is used for replacing the traditional silicon-based MOSFET to pursue smaller input capacitance and realize faster switching frequency, so that the PWM wave frequency can reach upper megahertz and the circuit can work normally. The NCP51810 replaces the traditional totem pole to realize the power amplification of the input signal, faster signal transmission and control of PWM wave dead time. LTC7801 is used to generate PWM signals for turning on and off the gallium nitride FET, and the feedback regulation unit detects the output signals to correct the output voltage.
The signal generating unit includes a control chip LTC7801. The specific circuit of the signal generating unit is as follows:
one end of the capacitor C1 is connected with the SS pin (pin 2) of the LTC7801, and the other end of the capacitor C1 is grounded and is used for realizing soft switching of the circuit.
R2 is connected in series with C3 and is connected in parallel with C2, one end of the parallel connection is connected with an ITH pin (pin 4) of the LTC7801, and the other end of the parallel connection is grounded.
One end of the capacitor C4 is grounded, and the other end of the capacitor C4 is connected to a MODE pin (pin 5), a CRUMP_EN pin (pin 7), a PLLIN pin (pin 8), a DRVSET pin (pin 11), a DRVUV pin (pin 12), an INTMVCC pin (pin 22) and an OVLO pin (pin 23) of the LTC7801, and the capacitor C is respectively used for setting a light load working MODE of the LTC7801, allowing 99% duty cycle operation to be carried out in an offline state, setting the external synchronous input of the phase detector to be in a skip pulse MODE, setting a threshold value of DRVCC to be 6V, DRVUV to be in a low trigger and stabilizing the output 5V of the chip.
Resistor R3 has one end connected to PGOOD pin (pin 9) of LTC7801 and the other end connected to MODE pin (pin 5) of LTC7801.
The specific circuit of the gallium nitride driving unit is as follows:
resistor R5 has one end connected to pin EN 13 of NCP51810 and the other end connected to VCC for powering the drive unit.
One ends of the resistors R7 and R8 are respectively connected with the pins HOSRC (pin 2) and HOSNK (pin 3) of the NCP51810, and the other ends of the resistors R7 and R8 are connected with the grid electrode of the upper tube G1 in the synchronous BUCK circuit. One ends of R9 and R10 are respectively connected with LOSRC (pin 6) and LOSNK (pin 7) pins of NCP51810, and the other ends of R9 and R10 are connected with the gate electrode of the lower tube G2 in the synchronous BUCK circuit. For reducing ringing of gallium nitride.
One end of a capacitor C9, C10 of the capacitor C11 is connected to VBST pin (pin 15) and VDDH pin (pin 1) of NCP51810 respectively, and the other ends of the capacitor C9, C10 are connected to SW pin (pin 4) of NCP51810. VDDL pin (pin 5) terminating NCP51810, the other end of capacitor C11 is grounded.
Resistor R4 is connected in series with diode D1, one end of resistor R4 is connected to VCC, and the other end of the diode is connected to VBST pin (pin 15) of NCP51810.
The circuit of the synchronous BUCK unit is as follows:
the source of the upper pipe G1 is connected to the drain of the lower pipe G2, with the SW pin (pin 4) of NCP51810 interposed therebetween.
One end of the inductor L1 is connected with the middle points of the G1 and the G2, and the other end is connected with the No. 1 pin of the extension socket P1 as an output end.
One end of the capacitor C12 is connected with the output end of the inductor L1, and the other end of the capacitor C is connected with the ground and is used for filtering output voltage.
The feedback regulation unit is composed of resistors R11 and R12. The relevant circuitry of the feedback conditioning unit is as follows:
the resistors R11 and R12 are connected in series, one end of the resistor R11 is connected with the No. 1 pin of the socket P1 and is an output end of the circuit, one end of the resistor R12 is grounded, and the middle points of the resistor R11 and the resistor R12 are connected with the VFB pin (pin 3) of the LTC7801 and used for detecting output voltage and carrying out feedback adjustment on the output voltage.
The frequency adjustment unit is composed of a resistor R1. The frequency adjustment unit circuit is as follows:
the resistor R1 has one end connected to ground and the other end connected to FREQ pin (pin 10) of LTC7801, and different signal frequencies of LTC7801 are set according to different values of R1, and their relationships are shown in FIG. 2.
The dead zone adjusting unit is composed of a resistor R6 and a capacitor C8. The dead zone adjusting unit circuit is as follows:
resistor R6 and capacitor C8 are connected in parallel, one end of the parallel connection is connected with DT pin (pin 9) of NCP51810, and the other end is grounded. Dead time versus resistance R6 is tdt=r6x1ns/kpi.
In experiments, the drive signal for gallium nitride with 50% duty cycle for the circuit at 2MHz frequency is shown in fig. 3.
According to the invention, the gallium nitride field effect transistor is selected to replace the traditional metal oxide semiconductor field effect transistor, and the traditional metal oxide semiconductor field effect transistor has large parasitic capacitance and low switching frequency. Then, a control chip capable of generating the upper megahertz PWM wave is selected to generate the control signal, because the working state of the invention is a large voltage, if the PWM wave is generated by the MCU, the large voltage circuit will generate a large interference to the MCU. The power of the control signal is amplified through the gallium nitride driving chip, and the input signal is calibrated and regulated through the feedback circuit. Therefore, the invention has the following effects:
1) The switching device can be operated at a frequency of upper megahertz.
2) When the switching power supply is applied to the synchronous rectification circuit, the conversion efficiency of the switching power supply can be improved. Since the on-resistance of gallium nitride is small, the loss at the time of on is small, and therefore the conversion efficiency can be improved.
3) The parameters of inductance and capacitance in the circuit can be reduced, so that the volume of the circuit is reduced, and the power density is improved. Taking the inductance as an example, zl=j2pi fL, when the inductance is constant, the larger the frequency f is, the smaller the inductance value L is, so that the parameters and the volume of the element can be reduced.
4) Can work at a higher pressure reduction ratio. Because gallium nitride can withstand a very high breakdown voltage between its drain and source compared to a MOSFET.
The foregoing describes in detail preferred embodiments of the present invention. It should be understood that numerous modifications and variations can be made in accordance with the concepts of the invention by one of ordinary skill in the art without undue burden. Therefore, all technical solutions which can be obtained by logic analysis, reasoning or limited experiments based on the prior art by the person skilled in the art according to the inventive concept shall be within the scope of protection defined by the claims.
Claims (10)
1. A high-frequency synchronous rectification switch power supply device is characterized in that the device comprises a DC/DC conversion unit, a feedback regulation unit, a frequency regulation unit and a dead zone regulation unit, wherein the input end of the DC/DC conversion unit is connected with direct current voltage,
the DC/DC conversion unit comprises a signal generation unit, a gallium nitride driving unit and a synchronous BUCK circuit, wherein the input end of the signal generation unit is connected with direct-current voltage, the output end of the signal generation unit is connected with the input end of the gallium nitride driving unit, the output end of the gallium nitride driving unit is connected with the synchronous BUCK circuit, the upper bridge arm and the lower bridge arm of the synchronous BUCK circuit are gallium nitride, and the output end of the synchronous BUCK circuit is connected with the feedback regulation unit.
2. The high-frequency synchronous rectification switching power supply device according to claim 1, wherein the signal generating unit comprises a control chip, an SS pin of the control chip is connected with a capacitor C1, an output voltage pin of an error amplifier of the control chip is connected with a capacitor C2, a capacitor C3 and a resistor R2, the capacitor C3 and the resistor R2 are connected in series, and then connected with the capacitor C2 in parallel, an operation mode selection pin, a charge pump enabling pin, an external synchronous input to the phase detector, a DRVCC regulation program pin, a UVLO regulation program pin, an output pin of an internal 5V low voltage drop regulator and an overvoltage locking input pin are connected with a capacitor C4, an open-drain logic output voltage pin of the control chip is connected with an operation mode selection pin through a resistor R3, an output pin of an internal or external low voltage drop regulator of the control chip and a driving output pin of an external device of the linear voltage regulator are connected with a capacitor C7, the capacitor C7 is grounded, an operation control input pin of the control chip and a main power supply pin are connected with a direct current voltage, and a grounding pin of the control chip is grounded.
3. The high-frequency synchronous rectification switching power supply device according to claim 2, wherein the gallium nitride driving unit comprises a driving chip, an enabling pin of a disabled driver of the driving chip is connected with direct-current voltage through a resistor R5, an upper tube driving rising voltage pin and an upper tube driving falling voltage pin of the driving chip are respectively connected with a resistor R7 and a resistor R8, the resistor R7 and the resistor R8 are respectively connected with a grid electrode of an upper tube G1 of the synchronous BUCK circuit, a lower tube driving rising voltage pin and a lower tube driving falling voltage pin of the driving chip are respectively connected with a resistor R9 and a resistor R10, and the resistor R9 and the resistor R10 are respectively connected with a grid electrode of a lower tube G2 of the synchronous BUCK circuit;
the low-side driving positive bias voltage output pin of the driving chip is connected with a capacitor C11, and the capacitor C11 is grounded;
a bootstrap positive bias voltage pin of the driving chip and a high-side driving positive bias voltage output pin are connected in series with a capacitor C9 and a capacitor C10, a connection point between the capacitor C9 and the capacitor C10 is connected with a switch node pin of the driving chip, the bootstrap positive bias voltage pin of the driving chip is connected with a cathode of a diode D1, an anode of the diode D1 is connected with a resistor R4, and the resistor R4 is connected with direct current voltage;
the switch node pin of the driving chip is connected with the switch node pin of the control chip, and the switch node pin of the driving chip is connected with the bootstrap power supply pin of the top floating driver of the control chip through a capacitor C6;
the logic input pin of the high-side grid driving output of the driving chip is connected with the high-current grid driving output pin of the upper tube N-channel MOSFET of the control chip, and the logic input pin of the low-side grid driving output of the driving chip is connected with the high-current grid driving output pin of the lower tube synchronous N-channel MOSFET of the control chip;
the signal grounding pin and the power grounding pin of the driving chip are grounded, and the bias voltage of the high-current driver of the driving chip is grounded to direct-current voltage.
4. The high-frequency synchronous rectification switching power supply device as claimed in claim 3, wherein the synchronous BUCK circuit comprises an upper tube G1, a lower tube G2, an inductor L1 and a capacitor C12, wherein a source electrode of the upper tube G1 is connected with a drain electrode of the lower tube G2, a drain electrode of the upper tube G1 is connected with a direct-current voltage, a source electrode of the lower tube G2 is grounded, one end of the inductor L1 is connected with a switch node pin of the driving chip, and meanwhile, the connection part of the capacitor C5 and a (+) input pin of a differential current comparator of the control chip is connected, and the capacitor C5 is connected with the (+) input pin of the differential current comparator and a (-) input pin of the differential current comparator of the control chip;
the other end of the inductor L1 is respectively connected with the (-) input pin of the differential current comparator of the control chip and the external power input pin of the linear voltage stabilizer of the control chip, and meanwhile, the other end of the inductor L1 is connected with the capacitor C12, and the capacitor C12 is grounded.
5. The high-frequency synchronous rectification switching power supply device according to claim 2, wherein the frequency regulating unit comprises a resistor R1, one end of the resistor R1 is grounded, and the other end of the resistor R1 is connected with a frequency regulating pin of the control chip.
6. A high frequency synchronous rectification switching power supply device as claimed in claim 3, wherein the dead zone adjusting unit comprises a capacitor C8 and a resistor R6 connected in parallel, one end of the capacitor C8 and one end of the resistor R6 connected in parallel are grounded, and the other end is connected with a dead zone adjusting pin of the driving chip.
7. The high-frequency synchronous rectification switching power supply device as claimed in claim 4, wherein said feedback regulation unit comprises a resistor R11 and a resistor R12 connected in series, one end of said resistor R11 is connected to the other end of said inductor L1, the other end of said resistor R11 is connected to said resistor R12, and the other end of said resistor R12 is grounded.
8. The high-frequency synchronous rectification switching power supply device as claimed in claim 7, wherein a connection between said resistor R11 and said resistor R12 is connected to a feedback input pin of said control chip.
9. The high-frequency synchronous rectification switching power supply device as claimed in claim 7, further comprising a power strip P1, wherein a first input terminal of said power strip P1 is connected to the other end of said inductor L1, and a second input terminal of said power strip P1 is grounded.
10. A high frequency synchronous rectification switching power supply device as claimed in claim 3, wherein said control chip is of the type LTC7801 and said driving chip is of the type NCP51810.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202311311684.2A CN117394707A (en) | 2023-10-11 | 2023-10-11 | High-frequency synchronous rectification switching power supply device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202311311684.2A CN117394707A (en) | 2023-10-11 | 2023-10-11 | High-frequency synchronous rectification switching power supply device |
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| CN117394707A true CN117394707A (en) | 2024-01-12 |
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| CN202311311684.2A Pending CN117394707A (en) | 2023-10-11 | 2023-10-11 | High-frequency synchronous rectification switching power supply device |
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