CN117394707A - A high-frequency synchronous rectification switching power supply device - Google Patents
A high-frequency synchronous rectification switching power supply device Download PDFInfo
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- 239000003381 stabilizer Substances 0.000 claims 1
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
- H02M7/02—Conversion of AC power input into DC power output without possibility of reversal
- H02M7/04—Conversion of AC power input into DC power output without possibility of reversal by static converters
- H02M7/12—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/21—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/217—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M7/219—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a bridge configuration
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
- H02M1/0054—Transistor switching losses
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/44—Circuits or arrangements for compensating for electromagnetic interference in converters or inverters
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of DC power input into DC power output
- H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
- H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
- H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
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Abstract
Description
技术领域Technical field
本发明涉及整流开关电源的技术领域，尤其是涉及一种高频同步整流开关电源装置。The present invention relates to the technical field of rectified switching power supply, and in particular, to a high-frequency synchronous rectifying switching power supply device.
背景技术Background technique
目前最常见的同步整流开关电源的开关管采用的是硅基MOSFET，因为硅基的MOSFET的导通电阻、寄生电容大，导致用硅基的MOSFET作为同步整流的开关管难以进一步的提升电路的转换效率，并不能工作在上兆赫兹的频率下，难以进一步缩小电路的体积。同时因为MOSFET的耐压不高，当需要高降压比的同步整流变换电路时，例如服务器供电，传统的做法是采用两级拓扑来实现，第一级通常采用LLC、半桥等拓扑，将48V线路电压转换到12V，然后第二级采用降压斩波电路，再把12V转换到5V，这样可以避免高降压比带来的MOSFET击穿。由于两级电路代表其总体效率为每一级的乘积，这样难以做到整体的高效率。At present, the most common switching tubes of synchronous rectification switching power supplies use silicon-based MOSFETs. Because silicon-based MOSFETs have large on-resistance and parasitic capacitance, it is difficult to further improve the circuit performance by using silicon-based MOSFETs as switching tubes for synchronous rectification. The conversion efficiency cannot operate at frequencies above megahertz, making it difficult to further reduce the size of the circuit. At the same time, because the withstand voltage of MOSFET is not high, when a synchronous rectification conversion circuit with a high step-down ratio is required, such as server power supply, the traditional approach is to use a two-level topology. The first level usually uses LLC, half-bridge and other topologies. The 48V line voltage is converted to 12V, and then the second stage uses a step-down chopper circuit to convert 12V to 5V. This can avoid MOSFET breakdown caused by a high step-down ratio. Since the overall efficiency of a two-stage circuit is the product of each stage, it is difficult to achieve high overall efficiency.
综上，同步整流开关电源中，硅基的MOSFET开关损耗和导通损耗都比较大，效率会降低，此外，现有的同步整流开关电源一般采用MCU控制死区时间，在高频同步整流开关电源处于大电压工作时，会对MCU造成较大影响，导致死区时间无法精确调控。In summary, in synchronous rectification switching power supplies, silicon-based MOSFET switching losses and conduction losses are relatively large, and the efficiency will be reduced. In addition, existing synchronous rectification switching power supplies generally use MCU to control the dead time. When the high-frequency synchronous rectification switch When the power supply is operating at a high voltage, it will have a greater impact on the MCU, causing the dead time to be unable to be accurately controlled.
发明内容Contents of the invention
本发明的目的就是为了克服上述问题而提供的一种高频同步整流开关电源装置。The purpose of the present invention is to provide a high-frequency synchronous rectification switching power supply device to overcome the above problems.
本发明的目的可以通过以下技术方案来实现：The object of the present invention can be achieved through the following technical solutions:
一种高频同步整流开关电源装置，装置包括DC/DC转换单元、反馈调节单元、频率调节单元和死区调节单元，DC/DC转换单元的输入端连接直流电压，其中，A high-frequency synchronous rectification switching power supply device. The device includes a DC/DC conversion unit, a feedback adjustment unit, a frequency adjustment unit and a dead zone adjustment unit. The input end of the DC/DC conversion unit is connected to a DC voltage, wherein,
DC/DC转换单元包括信号产生单元、氮化镓驱动单元和同步BUCK电路，信号产生单元的输入端连接直流电压，信号产生单元的输出端连接氮化镓驱动单元的输入端，氮化镓驱动单元的输出端连接同步BUCK电路，其中同步BUCK电路的上下桥臂为氮化镓，同步BUCK电路的输出端连接反馈调节单元。The DC/DC conversion unit includes a signal generation unit, a gallium nitride drive unit and a synchronous BUCK circuit. The input end of the signal generation unit is connected to the DC voltage, and the output end of the signal generation unit is connected to the input end of the gallium nitride drive unit. The gallium nitride drive unit The output end of the unit is connected to a synchronous BUCK circuit, the upper and lower bridge arms of the synchronous BUCK circuit are made of gallium nitride, and the output end of the synchronous BUCK circuit is connected to a feedback adjustment unit.
进一步地，信号产生单元包括控制芯片，控制芯片的SS脚连接电容C1，控制芯片的误差放大器的输出电压引脚连接电容C2、电容C3和电阻R2，电容C3和电阻R2相互串联，串联后与电容C2并联，控制芯片的工作模式选择引脚、电荷泵使能引脚、外部同步输入到相位检测器、DRVCC调节程序引脚、UVLO调节程序引脚、内部5V低压降调节器的输出引脚和过电压锁定输入引脚连接电容C4，控制芯片的开漏逻辑输出电压引脚通过电阻R3连接工作模式选择引脚，控制芯片的内部或外部低压差调节器的输出引脚和线性稳压器外部器件的驱动输出引脚连接电容C7，电容C7接地，控制芯片的运行控制输入引脚和主供电电源引脚连接直流电压，控制芯片的接地引脚接地。Further, the signal generation unit includes a control chip. The SS pin of the control chip is connected to the capacitor C1. The output voltage pin of the error amplifier of the control chip is connected to the capacitor C2, the capacitor C3 and the resistor R2. The capacitor C3 and the resistor R2 are connected in series with each other. Capacitor C2 is connected in parallel to control the chip's working mode selection pin, charge pump enable pin, external synchronization input to the phase detector, DRVCC adjustment program pin, UVLO adjustment program pin, and the output pin of the internal 5V low-voltage drop regulator The capacitor C4 is connected to the overvoltage lock input pin, and the open-drain logic output voltage pin of the control chip is connected to the working mode selection pin through the resistor R3 to control the output pin of the chip's internal or external low-dropout regulator and linear regulator. The drive output pin of the external device is connected to the capacitor C7, which is connected to the ground. The operation control input pin and the main power supply pin of the control chip are connected to the DC voltage, and the ground pin of the control chip is connected to the ground.
进一步地，氮化镓驱动单元包括驱动芯片，驱动芯片的禁用驱动器的使能引脚通过电阻R5连接直流电压，驱动芯片的上管驱动上升电压引脚和上管驱动下降电压引脚分别连接电阻R7和电阻R8，电阻R7和电阻R8分别连接同步BUCK电路的上管G1的栅极，驱动芯片的下管驱动上升电压引脚和下管驱动下降电压引脚分别连接电阻R9和电阻R10，电阻R9和电阻R10分别连接同步BUCK电路的下管G2的栅极；Further, the gallium nitride driver unit includes a driver chip. The enable pin of the disabled driver of the driver chip is connected to the DC voltage through the resistor R5. The upper tube driving rising voltage pin and the upper tube driving falling voltage pin of the driving chip are respectively connected to the resistors. R7 and resistor R8 are respectively connected to the gate of the upper tube G1 of the synchronous BUCK circuit. The lower tube driving rising voltage pin and the lower tube driving falling voltage pin of the driving chip are respectively connected to the resistor R9 and the resistor R10. The resistor R9 and resistor R10 are respectively connected to the gate of the lower tube G2 of the synchronous BUCK circuit;
驱动芯片的低边驱动正偏置电压输出引脚连接电容C11，电容C11接地；The low-side driver positive bias voltage output pin of the driver chip is connected to capacitor C11, and capacitor C11 is connected to ground;
驱动芯片的自举正偏置电压引脚和高边驱动正偏置电压输出引脚之间串联电容C9和电容C10，电容C9和电容C10之间的连接点连接驱动芯片的开关节点引脚，驱动芯片的自举正偏置电压引脚连接二极管D1的阴极，二极管D1的阳极连接电阻R4，电阻R4连接直流电压；Capacitor C9 and capacitor C10 are connected in series between the bootstrap positive bias voltage pin of the driver chip and the high-side driver positive bias voltage output pin. The connection point between capacitor C9 and capacitor C10 is connected to the switch node pin of the driver chip. The bootstrap forward bias voltage pin of the driver chip is connected to the cathode of diode D1, the anode of diode D1 is connected to resistor R4, and resistor R4 is connected to the DC voltage;
驱动芯片的开关节点引脚连接控制芯片的开关节点引脚，驱动芯片的开关节点引脚通过电容C6连接控制芯片的顶部浮动驱动器的自举电源引脚；The switch node pin of the driver chip is connected to the switch node pin of the control chip, and the switch node pin of the driver chip is connected to the bootstrap power pin of the top floating driver of the control chip through capacitor C6;
驱动芯片的高边栅极驱动输出的逻辑输入引脚连接控制芯片的上管N沟道MOSFET的大电流栅极驱动输出引脚，驱动芯片的低边栅极驱动输出的逻辑输入引脚连接控制芯片的下管同步N沟道MOSFET的大电流栅极驱动输出引脚；The logic input pin of the high-side gate driver output of the driver chip is connected to the high-current gate driver output pin of the upper-side N-channel MOSFET of the control chip, and the logic input pin of the driver chip's low-side gate driver output is connected to the control chip. The lower side of the chip synchronizes the high current gate drive output pin of the N-channel MOSFET;
驱动芯片的信号接地引脚和电源接地引脚接地，驱动芯片的大电流驱动器的偏置电压脚接直流电压。The signal ground pin and power ground pin of the driver chip are connected to ground, and the bias voltage pin of the high-current driver of the driver chip is connected to DC voltage.
进一步地，同步BUCK电路包括上管G1、下管G2、电感L1和电容C12，上管G1的源极连接下管G2的漏极，上管G1的漏极连接直流电压，下管G2的源极接地，电感L1的一端连接驱动芯片的开关节点引脚，同时连接电容C5与控制芯片的差分电流比较器的(+)输入引脚的连接处，电容C5连接差分电流比较器的(+)输入引脚和控制芯片的差分电流比较器的(-)输入脚；Further, the synchronous BUCK circuit includes an upper tube G1, a lower tube G2, an inductor L1 and a capacitor C12. The source of the upper tube G1 is connected to the drain of the lower tube G2, the drain of the upper tube G1 is connected to the DC voltage, and the source of the lower tube G2 is connected. The pole is grounded. One end of the inductor L1 is connected to the switch node pin of the driver chip. At the same time, it is connected to the connection between the capacitor C5 and the (+) input pin of the differential current comparator of the control chip. The capacitor C5 is connected to the (+) pin of the differential current comparator. Input pin and the (-) input pin of the differential current comparator of the control chip;
电感L1的另一端分别连接控制芯片的差分电流比较器的(-)输入引脚和控制芯片的线性稳压器的外部电源输入引脚，同时，电感L1的另一端连接电容C12，电容C12接地。The other end of the inductor L1 is connected to the (-) input pin of the differential current comparator of the control chip and the external power input pin of the linear regulator of the control chip. At the same time, the other end of the inductor L1 is connected to the capacitor C12, and the capacitor C12 is grounded. .
进一步地，频率调节单元包括电阻R1，电阻R1的一端接地，另一端连接控制芯片的频率调节引脚。Further, the frequency adjustment unit includes a resistor R1, one end of the resistor R1 is connected to ground, and the other end is connected to the frequency adjustment pin of the control chip.
进一步地，死区调节单元包括并联的电容C8和电阻R6，并联的电容C8和电阻R6的一端接地，另一端连接驱动芯片的死区调节引脚。Further, the dead-time adjustment unit includes a parallel-connected capacitor C8 and a resistor R6. One end of the parallel-connected capacitor C8 and the resistor R6 is grounded, and the other end is connected to the dead-time adjustment pin of the driver chip.
进一步地，反馈调节单元包括串联的电阻R11和电阻R12，电阻R11的一端连接电感L1的另一端，电阻R11的另一端连接电阻R12，电阻R12的另一端接地。Further, the feedback adjustment unit includes a resistor R11 and a resistor R12 connected in series. One end of the resistor R11 is connected to the other end of the inductor L1. The other end of the resistor R11 is connected to the resistor R12. The other end of the resistor R12 is grounded.
进一步地，电阻R11和电阻R12之间的连接处连接控制芯片的反馈输入引脚。Further, the connection between the resistor R11 and the resistor R12 is connected to the feedback input pin of the control chip.
进一步地，装置还包括接排插P1，接排插P1的第一输入端连接电感L1的另一端，接排插P1的第二输入端接地。Further, the device further includes a power strip P1, the first input end of the power strip P1 is connected to the other end of the inductor L1, and the second input end of the power strip P1 is connected to the ground.
进一步地，控制芯片的型号为LTC7801，驱动芯片的型号为NCP51810。Furthermore, the model number of the control chip is LTC7801, and the model number of the driver chip is NCP51810.
与现有技术相比，本发明具有以下有益效果：Compared with the prior art, the present invention has the following beneficial effects:
本发明以氮化镓FET代替传统的硅基MOSFET，能实现更高的开关频率，减小电路的损耗，并减小电路的体积，提高它的功率密度，来让PWM波的频率在达到上兆赫兹也能让电路正常工作，此外，通过死区调节单元而非通过MCU来控制死区的时间，避免MCU被影响，可以灵活调整死区时间，来达到简化电路，灵活缩小死区时间，提高电路转换效率。The present invention replaces the traditional silicon-based MOSFET with gallium nitride FET, which can achieve higher switching frequency, reduce the loss of the circuit, reduce the volume of the circuit, and increase its power density, so that the frequency of the PWM wave can reach above MHz can also make the circuit work normally. In addition, the dead time is controlled through the dead time adjustment unit rather than through the MCU to avoid the MCU being affected. The dead time can be flexibly adjusted to simplify the circuit and flexibly reduce the dead time. Improve circuit conversion efficiency.
附图说明Description of the drawings
图1为本发明的电路结构示意图；Figure 1 is a schematic diagram of the circuit structure of the present invention;
图2为频率调节单元中电阻R1的值和控制芯片的工作频率的关系；Figure 2 shows the relationship between the value of resistor R1 in the frequency adjustment unit and the operating frequency of the control chip;
图3为2MHz的氮化镓的驱动信号；Figure 3 shows the driving signal of 2MHz gallium nitride;
其中，1DC/DC转换单元，2反馈调节单元，3频率调节单元，4死区调节单元。Among them, 1 DC/DC conversion unit, 2 feedback adjustment units, 3 frequency adjustment units, and 4 dead zone adjustment units.
具体实施方式Detailed ways
下面结合附图和具体实施例对本发明进行详细说明。本实施例以本发明技术方案为前提进行实施，给出了详细的实施方式和具体的操作过程，但本发明的保护范围不限于下述的实施例。The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments. This embodiment is implemented based on the technical solution of the present invention and provides detailed implementation modes and specific operating procedures. However, the protection scope of the present invention is not limited to the following embodiments.
本发明中采用的芯片的引脚解释如表1和表2所示：The pin explanation of the chip used in the present invention is shown in Table 1 and Table 2:
表1 LTC7801引脚解释Table 1 LTC7801 pin explanation
表2 NCP51810引脚解释Table 2 NCP51810 pin explanation
本发明提出一种高频同步整流开关电源装置，装置的电路图如图1所示，本发明用新材料氮化镓来代替传统的硅基MOSFET，来提高电路的整体效率，以及缩小电路的体积，有效解决了传统基于硅基的MOSFET所具有的寄生电容大、导通电阻大、电路体积大、源漏极之间耐压小等不足之处。将氮化镓元件用于同步整流电路中，来替换掉MOSFET，利用其寄生电容小，使得导通和关断时间大大缩小，可以让它在上兆赫兹的频率下工作。同时因为氮化镓的导通电阻小，它开通和关断以及导通时的损耗也大大减小了，电路的转换效率能有效提升。The present invention proposes a high-frequency synchronous rectification switching power supply device. The circuit diagram of the device is shown in Figure 1. The present invention uses new material gallium nitride to replace the traditional silicon-based MOSFET to improve the overall efficiency of the circuit and reduce the size of the circuit. , effectively solves the shortcomings of traditional silicon-based MOSFETs such as large parasitic capacitance, large on-resistance, large circuit volume, and low voltage resistance between source and drain. Gallium nitride components are used in synchronous rectification circuits to replace MOSFETs. Using their small parasitic capacitance, the turn-on and turn-off times are greatly shortened, allowing it to operate at frequencies above megahertz. At the same time, because the on-resistance of gallium nitride is small, its switching on and off and conduction losses are also greatly reduced, and the conversion efficiency of the circuit can be effectively improved.
本实施例中，因为氮化镓器件需要驱动才能工作，因此选用NCP51810来作为氮化镓的驱动芯片。它可以产生带死区的PWM波，并且死区时间可调。带死区的PWM波可以防止半桥拓扑的氮化镓烧坏。响应速度快，传播延时短，上升为2ns，下降为1.5ns。可以让氮化镓快速开通关断。In this embodiment, because the gallium nitride device needs to be driven to work, NCP51810 is selected as the gallium nitride driver chip. It can generate PWM wave with dead zone, and the dead zone time is adjustable. The PWM wave with dead zone can prevent the gallium nitride of the half-bridge topology from burning out. The response speed is fast and the propagation delay is short, rising to 2ns and falling to 1.5ns. Gallium nitride can be turned on and off quickly.
同时，因为服务器的电压输入为48V，输出电压为5V，属于大电压工作状态，不能选用一般的MCU控制芯片，而且本设计的同步整流开关电源的工作频率为兆赫兹级别，需要性能更好的信号控制器，因此选用LTC7801。它可以生成频率和幅值可调的PWM波，并且还具有反馈调节功能，搭配反馈调节单元，通过检测输出信号，来对输入电压进行调整。当输出电压未达到设定值，检测电路会反馈给LTC7801，来修正输入电压，达到闭环控制。At the same time, because the voltage input of the server is 48V and the output voltage is 5V, which is a high-voltage working state, ordinary MCU control chips cannot be used. Moreover, the working frequency of the synchronous rectification switching power supply of this design is at the megahertz level, which requires better performance. Signal controller, so LTC7801 is selected. It can generate PWM waves with adjustable frequency and amplitude, and also has a feedback adjustment function. It is equipped with a feedback adjustment unit to adjust the input voltage by detecting the output signal. When the output voltage does not reach the set value, the detection circuit will feed back to the LTC7801 to correct the input voltage and achieve closed-loop control.
本发明的高频同步整流开关电源装置包括DC/DC转换单元1、反馈调节单元2、频率调节单元3和死区调节单元4。The high-frequency synchronous rectification switching power supply device of the present invention includes a DC/DC conversion unit 1, a feedback adjustment unit 2, a frequency adjustment unit 3 and a dead zone adjustment unit 4.
DC/DC转换单元用于将电源供电的直流电压转换为特定的PWM直流电压输出；反馈调节单元用于检测输出的负载电压，并反馈到DC/DC转换单元，进而调节PWM信号的输出；频率调节单元用于调节电路的开关频率，以便适用于不同的场合，频率可以向下兼容；死区调节单元用于调节PWM信号，来让同步BUCK拓扑中氮化镓上下管不会在开通和关断时烧坏。The DC/DC conversion unit is used to convert the DC voltage of the power supply into a specific PWM DC voltage output; the feedback adjustment unit is used to detect the output load voltage and feed it back to the DC/DC conversion unit to adjust the output of the PWM signal; frequency The adjustment unit is used to adjust the switching frequency of the circuit so that it is suitable for different occasions and the frequency can be downward compatible; the dead zone adjustment unit is used to adjust the PWM signal so that the gallium nitride upper and lower transistors in the synchronous BUCK topology will not turn on and off. Burned out when broken.
DC/DC转换单元包含信号产生单元、氮化镓驱动单元、同步BUCK电路。信号产生单元是将输入直流电源转换为PWM波输出，采用LTC7801芯片；氮化镓的驱动单元是将信号产生单元生成的PWM波进一步处理，将他的功率进行放大，来控制同步BUCK中上下桥臂的开通和关断，采用NCP51810驱动芯片；同步BUCK电路中上下桥臂的氮化镓采用GS66504B。The DC/DC conversion unit includes a signal generation unit, a gallium nitride drive unit, and a synchronous BUCK circuit. The signal generation unit converts the input DC power into PWM wave output, using the LTC7801 chip; the gallium nitride drive unit further processes the PWM wave generated by the signal generation unit and amplifies its power to control the upper and lower bridges in the synchronous BUCK The NCP51810 driver chip is used to turn on and off the arms; the gallium nitride of the upper and lower arms in the synchronous BUCK circuit uses GS66504B.
反馈调节单元是由两个串联的电阻R11和R12组成，由串联分压将得到的电压反馈给LTC7801。电阻R11的一端接DCDC转换单元的输出端，电阻R11的另一端通过电阻R12后接地。电阻R11和R12中间的连接点输出检测电压信号，检测电压信号连接LTC7801的VFB端口。The feedback adjustment unit is composed of two resistors R11 and R12 connected in series, and the voltage obtained is fed back to the LTC7801 through series voltage division. One end of the resistor R11 is connected to the output end of the DCDC conversion unit, and the other end of the resistor R11 is connected to the ground through the resistor R12. The connection point between resistors R11 and R12 outputs a detection voltage signal, and the detection voltage signal is connected to the VFB port of LTC7801.
频率调节单元主要由电阻R3组成，R3的一端接到LTC7801的FREQ引脚，电阻R3的另一端接到地。The frequency adjustment unit is mainly composed of resistor R3. One end of R3 is connected to the FREQ pin of LTC7801, and the other end of resistor R3 is connected to ground.
死区调节单元主要由电阻R4组成，R4的一端接到NCP51810的DT引脚，电阻R4的另一端接到地。The dead zone adjustment unit is mainly composed of resistor R4. One end of R4 is connected to the DT pin of NCP51810, and the other end of resistor R4 is connected to ground.
以氮化镓FET代替传统的硅基MOSFET，来追求更小的输入电容，实现更快的开关频率，来让PWM波的频率在达到上兆赫兹也能让电路正常工作。用NCP51810取代传统的图腾柱，来实现输入信号的功率放大，以及更快的信号传输和对PWM波死区时间的控制。用LTC7801来产生开通关断氮化镓FET的PWM信号，并通过反馈调节单元检测输出信号，来对输出电压进行修正。Gallium nitride FETs are used instead of traditional silicon-based MOSFETs to pursue smaller input capacitance and achieve faster switching frequencies, so that the circuit can operate normally even when the frequency of the PWM wave reaches upper megahertz. Use NCP51810 to replace the traditional totem pole to achieve power amplification of the input signal, faster signal transmission and control of the PWM wave dead time. The LTC7801 is used to generate the PWM signal that turns on and off the gallium nitride FET, and the output signal is detected through the feedback adjustment unit to correct the output voltage.
信号产生单元包括控制芯片LTC7801。信号产生单元的具体电路如下：The signal generation unit includes the control chip LTC7801. The specific circuit of the signal generation unit is as follows:
电容C1一端接LTC7801的SS脚(pin2)，C1的另一端接地，用于实现电路的的软开关。One end of capacitor C1 is connected to the SS pin (pin2) of LTC7801, and the other end of C1 is connected to ground, which is used to implement soft switching of the circuit.
R2与C3串联并与C2并联，并联后一端接LTC7801的ITH脚(pin4)，并联的另一端接地。R2 and C3 are connected in series and in parallel with C2. One end of the parallel connection is connected to the ITH pin (pin4) of LTC7801, and the other end of the parallel connection is connected to ground.
电容C4的一端接地，另一端接到LTC7801的MODE脚(pin5)，CRUMP_EN脚(pin7)，PLLIN脚(pin8)，DRVSET脚(pin11)，DRVUV脚(pin12)，INTVCC脚(pin22)，OVLO脚(pin23)，分别用于设置LTC7801的轻载工作模式、允许99％占空比操作在脱机状态下进行、相位检波器外同步输入设置为跳脉冲模式、设置DRVCC为6V、DRVUV的阈值设置为低触发、给芯片的输出5V稳压。One end of capacitor C4 is connected to ground, and the other end is connected to the MODE pin (pin5), CRUMP_EN pin (pin7), PLLIN pin (pin8), DRVSET pin (pin11), DRVUV pin (pin12), INTVCC pin (pin22), and OVLO pin of LTC7801 (pin23), which are used to set the light load operating mode of the LTC7801, allow 99% duty cycle operation in the offline state, set the phase detector external synchronization input to pulse skipping mode, set DRVCC to 6V, and set the DRVUV threshold It is a low trigger and stabilizes the output of the chip at 5V.
电阻R3的一端接LTC7801的PGOOD脚(pin9)，另一端接LTC7801的MODE脚(pin5)。One end of the resistor R3 is connected to the PGOOD pin (pin9) of the LTC7801, and the other end is connected to the MODE pin (pin5) of the LTC7801.
氮化镓驱动单元的具体电路如下：The specific circuit of the gallium nitride driver unit is as follows:
电阻R5的一端接在NCP51810的EN脚(pin13)，另一端接VCC，用于给驱动单元供电。One end of resistor R5 is connected to the EN pin (pin13) of NCP51810, and the other end is connected to VCC to power the drive unit.
电阻R7、R8的一端分别接在NCP51810的HOSRC(pin2)和HOSNK(pin3)脚，R7和R8另一端都接在同步BUCK电路中的上管G1的栅极上。R9、R10的一端分别接在NCP51810的LOSRC(pin6)和LOSNK(pin7)脚，R9和R10另一端都接在同步BUCK电路中的下管G2的栅极上。用于削减氮化镓的振铃现象。One end of resistors R7 and R8 are connected to the HOSRC (pin2) and HOSNK (pin3) pins of NCP51810 respectively, and the other ends of R7 and R8 are connected to the gate of the upper transistor G1 in the synchronous BUCK circuit. One end of R9 and R10 is connected to the LOSRC (pin6) and LOSNK (pin7) pins of the NCP51810 respectively, and the other ends of R9 and R10 are connected to the gate of the lower tube G2 in the synchronous BUCK circuit. Used to reduce the ringing phenomenon of gallium nitride.
电容C11的一电容C9、C10的一端分别接NCP51810的VBST脚(pin15)、VDDH脚(pin1)，电容C9、C10的另一端都接在NCP51810的SW脚(pin4)。端接NCP51810的VDDL脚(pin5)，电容C11的另一端接地。One end of capacitor C9 and C10 of capacitor C11 is connected to the VBST pin (pin15) and VDDH pin (pin1) of NCP51810 respectively. The other ends of capacitor C9 and C10 are connected to the SW pin (pin4) of NCP51810. The terminal is connected to the VDDL pin (pin5) of NCP51810, and the other end of capacitor C11 is connected to ground.
电阻R4和二极管D1串联，电阻R4的一端接VCC，二极管的另一端接NCP51810的VBST脚(pin15)。Resistor R4 and diode D1 are connected in series. One end of resistor R4 is connected to VCC, and the other end of the diode is connected to the VBST pin (pin15) of NCP51810.
同步BUCK单元的电路如下：The circuit of the synchronous BUCK unit is as follows:
上管G1的源极与下管G2的漏极连接，中间接NCP51810的SW脚(pin4)。The source of the upper tube G1 is connected to the drain of the lower tube G2, and the SW pin (pin4) of the NCP51810 is connected in between.
电感L1的一端接G1和G2的中点，另一端接排插P1的1号脚作为输出端。One end of the inductor L1 is connected to the midpoint of G1 and G2, and the other end is connected to pin 1 of P1 as the output end.
电容C12的一端接电感L1的输出端，另一端接地，用于给输出电压滤波。One end of the capacitor C12 is connected to the output end of the inductor L1, and the other end is connected to ground for filtering the output voltage.
反馈调节单元由电阻R11和R12组成。反馈调节单元的相关电路如下：The feedback adjustment unit consists of resistors R11 and R12. The relevant circuit of the feedback adjustment unit is as follows:
电阻R11和R12串联，R11的一端与排插P1的1号脚连接，为电路的输出端，R12的一端接地，R11和R12中点接LTC7801的VFB脚(pin3)，用来检测输出电压以及对输出电压反馈调节。Resistors R11 and R12 are connected in series. One end of R11 is connected to pin 1 of strip P1, which is the output end of the circuit. One end of R12 is connected to ground. The midpoint of R11 and R12 is connected to the VFB pin (pin3) of LTC7801 to detect the output voltage and Feedback adjustment of output voltage.
频率调节单元由电阻R1组成。频率调节单元电路如下：The frequency adjustment unit consists of resistor R1. The frequency adjustment unit circuit is as follows:
电阻R1的一端接地，另一端接LTC7801的FREQ脚(pin10)，根据R1不同的值来给设定LTC7801不同的信号频率，他们的关系如图2所示。One end of resistor R1 is connected to ground, and the other end is connected to the FREQ pin (pin10) of LTC7801. Different signal frequencies of LTC7801 are set according to different values of R1. Their relationship is shown in Figure 2.
死区调节单元由电阻R6和电容C8组成。死区调节单元电路如下：The dead zone adjustment unit is composed of resistor R6 and capacitor C8. The dead zone adjustment unit circuit is as follows:
电阻R6和电容C8并联，并联的一端接NCP51810的DT脚(pin9)，另一端接地。死区时间与电阻R6的关系为tDT＝R6 x 1ns/kπ。Resistor R6 and capacitor C8 are connected in parallel, one end of the parallel connection is connected to the DT pin (pin9) of NCP51810, and the other end is connected to ground. The relationship between dead time and resistor R6 is tDT=R6 x 1ns/kπ.
进行实验时，电路在2MHz频率下，50％占空比下工作的氮化镓的驱动信号如图3所示。When conducting experiments, the driving signal of the gallium nitride circuit operating at a frequency of 2MHz and a duty cycle of 50% is shown in Figure 3.
本发明首先选择氮化镓场效应管来取代传统的金属氧化物半导体场效应管，传统的金属氧化物半导体场效应管的寄生电容大，开关频率低。接着选择能产生上兆赫兹PWM波的控制芯片来产生控制信号，因为本发明的工作状态是大电压，如果通过MCU来产生PWM波，则大电压电路会对MCU产生较大的干扰。并通过氮化镓驱动芯片来对控制信号的功率进行放大，并通过反馈电路来对输入信号进行校准调控。因此，本发明有以下效果：The present invention first selects gallium nitride field effect transistors to replace traditional metal oxide semiconductor field effect transistors. Traditional metal oxide semiconductor field effect transistors have large parasitic capacitance and low switching frequency. Then select a control chip that can generate high-MHz PWM waves to generate control signals, because the working state of the present invention is high voltage. If the PWM wave is generated by an MCU, the high-voltage circuit will cause greater interference to the MCU. The power of the control signal is amplified through the gallium nitride driver chip, and the input signal is calibrated and regulated through the feedback circuit. Therefore, the present invention has the following effects:
1)能让开关器件在上兆赫兹的频率下工作。1) Enables switching devices to operate at frequencies above megahertz.
2)当应用于同步整流电路时，能提高开关电源的转换效率。因为氮化镓的导通电阻小，所以在导通时损耗小，所以能提高转换效率。2) When applied to synchronous rectification circuits, it can improve the conversion efficiency of switching power supplies. Because the on-resistance of gallium nitride is small, the loss during conduction is small, so the conversion efficiency can be improved.
3)能减小电路中电感和电容的参数进而减小电路的体积，提高功率密度。拿电感举例，ZL＝J2πfL，感抗一定时，频率f越大，电感值L就越小，所以能减小元件的参数和体积。3) It can reduce the parameters of the inductor and capacitor in the circuit, thereby reducing the size of the circuit and increasing the power density. Take the inductor as an example, ZL = J2πfL. When the inductive reactance is constant, the greater the frequency f, the smaller the inductance value L, so the parameters and volume of the component can be reduced.
4)能在更高的降压比下工作。因为氮化镓相比MOSFET，他的漏极和源极之间能承受刚高的击穿电压。4) Can work at a higher voltage reduction ratio. Because gallium nitride can withstand a much higher breakdown voltage between its drain and source than MOSFET.
以上详细描述了本发明的较佳具体实施例。应当理解，本领域的普通技术人员无需创造性劳动就可以根据本发明的构思作出诸多修改和变化。因此，凡本技术领域中技术人员依本发明的构思在现有技术的基础上通过逻辑分析、推理或者有限的实验可以得到的技术方案，皆应在由权利要求书所确定的保护范围内。The preferred embodiments of the present invention are described in detail above. It should be understood that those skilled in the art can make many modifications and changes based on the concept of the present invention without creative efforts. Therefore, any technical solutions that can be obtained by those skilled in the art through logical analysis, reasoning or limited experiments based on the concept of the present invention and on the basis of the prior art should be within the scope of protection determined by the claims.
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