CN117393474B - Wafer multizone heating device - Google Patents
Wafer multizone heating device Download PDFInfo
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- CN117393474B CN117393474B CN202311685406.3A CN202311685406A CN117393474B CN 117393474 B CN117393474 B CN 117393474B CN 202311685406 A CN202311685406 A CN 202311685406A CN 117393474 B CN117393474 B CN 117393474B
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 271
- 238000012546 transfer Methods 0.000 claims abstract description 8
- 238000009413 insulation Methods 0.000 claims description 64
- 239000000498 cooling water Substances 0.000 claims description 12
- 238000003466 welding Methods 0.000 claims description 9
- 238000001816 cooling Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 description 6
- 239000002184 metal Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The embodiment of the present disclosure provides a wafer multi-zone heating device, including: the heating device comprises a heating disc, a first heating zone, a second heating zone and a drainage part, wherein the heating disc comprises an upper disc surface and a lower disc surface; the first heating area is arranged between the upper disc surface and the lower disc surface; the second heating zone is arranged between the upper disc surface and the lower disc surface, and the second heating zone and the first heating zone are adjacently arranged; the drainage part is arranged between the first heating area and the second heating area and is used for guiding heat adjacent to the first heating area and the second heating area to the lower disc surface so as to avoid heat crosstalk adjacent to the upper disc surface between the first heating area and the second heating area. Through setting up drainage portion between first zone of heating and second zone of heating, drainage portion will first zone of heating and the adjacent department of second zone of heating heat drainage to lower quotation department, can keep apart the heat transfer between first zone of heating and the second zone of heating, avoid the temperature to interfere each other between first zone of heating and the second zone of heating to realize higher adjustable difference in temperature scope.
Description
Technical Field
The present disclosure relates to wafer heating technologies, and in particular, to a wafer multi-zone heating device.
Background
With the advancement of technology, the processing of chips is becoming more and more complex, requiring more devices to be fabricated per unit wafer area. The metal heating plate is usually used for dry wafer photoresist removal and film plating processes, and the working principle is that a heating wire is buried in the surface of the heating plate in a welding mode, and the heating wire is electrified and heated to be conducted onto a wafer through a plate surface structure. However, when the metal heating plate is used for multi-zone heating, heat between the heating zones is easy to cross talk, so that the heating effect on the wafer is poor.
Disclosure of Invention
In view of this, the embodiments of the present disclosure provide a wafer multi-zone heating device, by providing a drainage portion between the first heating zone and the second heating zone, the drainage portion drains heat adjacent to the first heating zone and the second heating zone to the lower disc surface, so that heat transfer between the first heating zone and the second heating zone can be isolated, and temperature interference between the first heating zone and the second heating zone is avoided, thereby realizing a higher adjustable temperature difference range.
The embodiment of the specification provides the following technical scheme: a wafer multi-zone heating apparatus comprising:
the heating plate comprises an upper plate surface and a lower plate surface;
the first heating area is arranged between the upper disc surface and the lower disc surface;
the second heating zone is arranged between the upper disc surface and the lower disc surface, and the second heating zone and the first heating zone are adjacently arranged;
the drainage part is arranged between the first heating area and the second heating area and is used for conducting heat adjacent to the first heating area and the second heating area to the lower disc surface so as to avoid heat crosstalk at the upper disc surface adjacent to the first heating area and the second heating area.
Preferably, the drainage part comprises a first heat insulation groove and a second heat insulation groove which are arranged in the upper disc surface, the first heat insulation groove is arranged on one side, close to the second heating area, of the first heating area, so that heat of the first heating area is transferred to the lower disc surface by bypassing the first heat insulation groove, and the second heat insulation groove is arranged on one side, close to the first heating area, of the second heating area, so that heat of the second heating area is transferred to the lower disc surface by bypassing the second heat insulation groove.
Preferably, the drainage part further comprises a third heat insulation groove arranged on the upper disc surface, the third heat insulation groove is arranged between the first heat insulation groove and the second heat insulation groove, and the third heat insulation groove isolates heat bypassing the first heat insulation groove from heat bypassing the second heat insulation groove so as to ensure that the heat is transferred to the lower disc surface.
Preferably, the drainage part further comprises a fourth heat insulation groove arranged in the upper disc surface, the fourth heat insulation groove is arranged at the outer side of the first heating area, and the fourth heat insulation groove is used for preventing heat of the first heating area from being emitted through the outer side of the upper disc surface.
Preferably, the device further comprises a cooling water channel, wherein the cooling water channel is arranged on one side of the lower disc surface far away from the upper disc surface, and the cooling water channel cools the lower disc surface, so that the temperature of the lower disc surface is always lower than that of the upper disc surface.
Preferably, the first heating zone is annularly arranged, the second heating zone is circularly arranged, and the second heating zone is positioned in the inner ring area of the first heating zone.
Preferably, the first heating area and the second heating area are welded on one side of the lower disc surface, which is close to the upper disc surface, and the upper disc surface and the lower disc surface are connected in a welding mode.
Preferably, the first heating zone comprises a first heating wire and a first thermocouple, and the first heating wire and the first thermocouple are welded on the lower disc surface in an annular manner;
and/or the second heating area comprises a second heating wire and a second thermocouple, and the second heating wire and the second thermocouple are welded on the lower disc surface in a circular shape.
Preferably, the device further comprises a heat stand column, and the heat stand column is welded with the lower disc surface.
Preferably, the first heating zone and the second heating zone are controlled in an independent control manner, so as to realize different temperatures of the first heating zone and the second heating zone.
Compared with the prior art, the beneficial effects that above-mentioned at least one technical scheme that this description embodiment adopted can reach include at least:
through setting up first zone of heating and second zone of heating in the heating tray, realize the subregion heating to the wafer, through setting up drainage portion between first zone of heating and second zone of heating, drainage portion is with the heat drainage of first zone of heating and second zone of heating adjacent department to lower quotation department, can keep apart the heat transfer between first zone of heating and the second zone of heating, avoid the temperature to interfere each other between first zone of heating and the second zone of heating to realize higher adjustable difference in temperature scope.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a top view of a wafer multi-zone heating apparatus provided herein;
FIG. 2 is a cross-sectional view of a wafer multi-zone heating apparatus provided herein;
FIG. 3 is a schematic view of a flow guiding portion of the wafer multi-zone heating device provided by the present application;
fig. 4 is a schematic heat flow diagram of the wafer multi-zone heating device provided in the present application.
In the figure, 1, a heating plate; 11. an upper disc surface; 12. a lower disc surface; 2. a first heating zone; 3. a second heating zone; 4. a cooling water channel; 5. a drainage part; 51. a first insulation trench; 52. a second insulation trench; 53. a third insulation trench; 54. a fourth insulation trench; 6. and a heat stand column.
Detailed Description
Embodiments of the present application are described in detail below with reference to the accompanying drawings.
Other advantages and effects of the present application will become apparent to those skilled in the art from the present disclosure, when the following description of the embodiments is taken in conjunction with the accompanying drawings. It will be apparent that the described embodiments are only some, but not all, of the embodiments of the present application. The present application may be embodied or carried out in other specific embodiments, and the details of the present application may be modified or changed from various points of view and applications without departing from the spirit of the present application. It should be noted that the following embodiments and features in the embodiments may be combined with each other without conflict. All other embodiments, which can be made by one of ordinary skill in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application.
It is noted that various aspects of the embodiments are described below within the scope of the following claims. It should be apparent that the aspects described herein may be embodied in a wide variety of forms and that any specific structure and/or function described herein is merely illustrative. Based on the present application, one skilled in the art will appreciate that one aspect described herein may be implemented independently of any other aspect, and that two or more of these aspects may be combined in various ways. For example, apparatus may be implemented and/or methods practiced using any number and aspects set forth herein. In addition, such apparatus may be implemented and/or such methods practiced using other structure and/or functionality in addition to one or more of the aspects set forth herein.
It should also be noted that the illustrations provided in the following embodiments merely illustrate the basic concepts of the application by way of illustration, and only the components related to the application are shown in the drawings and are not drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of the components in actual implementation may be arbitrarily changed, and the layout of the components may be more complicated.
In addition, in the following description, specific details are provided in order to provide a thorough understanding of the examples. However, it will be understood by those skilled in the art that the aspects may be practiced without these specific details.
The metal heating plate is usually used for dry wafer photoresist removal and film plating processes, and the working principle is that a heating wire is buried in the surface of the heating plate in a welding mode, and the heating wire is electrified and heated to be conducted onto a wafer through a plate surface structure. The heating plate has the main functions of: 1. and the second stage is used for supporting the wafer, the third stage is used for providing heat for the wafer and isolating vacuum.
Because photoresist removal and coating processes are sensitive to temperature, the use of the multi-zone heater can independently adjust the wafer to have different temperature intervals locally, so that the deposition and etching rate of the wafer surface are changed, but when the conventional metal heating disc is used for multi-zone heating, heat between heating zones is easy to cross talk, and the heating effect on the wafer is poor.
The inventor designs a wafer multi-zone heating device through extensive and intensive experiments.
The invention solves the technical problems that: the problem of heat between each heating zone is liable to cross talk is solved.
More specifically, the solution adopted by the invention comprises the following steps: through setting up first zone of heating and second zone of heating in the heating tray, realize the subregion heating to the wafer, through setting up drainage portion between first zone of heating and second zone of heating, drainage portion is with the heat drainage of first zone of heating and second zone of heating adjacent department to lower quotation department, can keep apart the heat transfer between first zone of heating and the second zone of heating, avoid the temperature to interfere each other between first zone of heating and the second zone of heating to realize higher adjustable difference in temperature scope.
The following describes the technical solutions provided by the embodiments of the present application with reference to the accompanying drawings.
As shown in fig. 1-4, a wafer multi-zone heating apparatus includes:
the wafer heating device comprises a heating plate 1, wherein the heating plate 1 comprises an upper plate surface 11 and a lower plate surface 12, a wafer is placed on the upper plate surface 11, and the upper plate surface 11 is used as a carrying platform for supporting the wafer;
a first heating zone 2, wherein the first heating zone 2 is arranged between the upper disc surface 11 and the lower disc surface 12;
a second heating zone 3, wherein the second heating zone 3 is arranged between the upper disc surface 11 and the lower disc surface 12, and the second heating zone 3 and the first heating zone 2 are adjacently arranged;
the drainage part 5, the drainage part 5 set up in between the first zone of heating 2 with the second zone of heating 3, the drainage part 5 is used for with the heat drainage of first zone of heating 2 with the adjacent department of second zone of heating 3 reaches lower quotation 12 department to avoid first zone of heating 2 with the adjacent department of second zone of heating 3 is in the crosstalk of heat of upper quotation 11 department.
Through setting up first heating zone 2 and second heating zone 3 between upper disc 11 and lower disc 12, first heating zone 2 and second heating zone 3 are adjacent to be set up, first heating zone 2 and second heating zone 3 are to the regional heating of difference district heating of wafer respectively, when first heating zone 2 and second heating zone 3 heat, partial heat is transmitted to the different district departments of wafer through upper disc 11, set up drainage portion 5 between first heating zone 2 and second heating zone 3, drainage portion 5 is with the heat conduction of the adjacent department of first heating zone 2 and second heating zone 3 to lower disc 12 department, then give off, can isolate the heat transfer between first heating zone 2 and the second heating zone 3, avoid the temperature to interfere each other between first heating zone 2 and the second heating zone 3, thereby realize higher adjustable temperature difference scope.
In other embodiments, a plurality of heating regions may be provided, and a drainage portion 5 may be provided between adjacent heating regions to guide heat, so as to avoid temperature interference between adjacent heating regions.
As shown in fig. 2-4, in some embodiments, the drainage portion 5 includes a first heat insulation groove 51 and a second heat insulation groove 52 that are formed in the upper disc surface 11, the first heat insulation groove 51 is disposed on a side of the first heating area 2 close to the second heating area 3, so that heat of the first heating area 2 bypasses the first heat insulation groove 51 to be transferred to the lower disc surface 12, the second heat insulation groove 52 is disposed on a side of the second heating area 3 close to the first heating area 2, so that heat of the second heating area 3 bypasses the second heat insulation groove 52 to be transferred to the lower disc surface 12, and by disposing the first heat insulation groove 51 on an inner side of the first heating area 2, because a heat conduction speed of air is necessarily lower than that of the upper disc surface 11, heat of the first heating area 2 can bypass the first heat insulation groove 51, a length of a heat conduction path of the first heating area 2 can be increased, and a second heat insulation groove 52 is disposed on an outer side of the second heating area 3, so that heat of the second heating area 3 bypasses the second heat insulation groove 52, and the second heat insulation groove 52 can be prevented from being transferred to the lower heating area 2, and the second heat insulation groove 2 is prevented from bypassing the first heat insulation groove 2 and the second heat insulation groove 52.
The first heat insulating groove 51 and the second heat insulating groove 52 are provided inside the upper disk surface 11, and the grooving direction thereof is close to one side of the upper disk surface 11 close to the lower disk surface 12.
As shown in fig. 2 to fig. 4, in some embodiments, the drainage portion 5 further includes a third heat insulation groove 53 that is opened on the upper disc surface 11, where the third heat insulation groove 53 is disposed between the first heat insulation groove 51 and the second heat insulation groove 52, and the third heat insulation groove 53 isolates heat bypassing the first heat insulation groove 51 from heat bypassing the second heat insulation groove 52 to ensure heat transfer to the lower disc surface 12, and by disposing the third heat insulation groove 53 between the first heat insulation groove 51 and the second heat insulation groove 52, the third heat insulation groove 53 can prevent heat bypassing the first heat insulation groove 51 from being transferred to the second heat area 3 by the first heat area 2 or prevent heat bypassing the second heat insulation groove 52 from being transferred to the first heat area 2 by the second heat area 3, so as to avoid temperature interference between the first heat area 2 and the second heat area 3.
The third heat insulation groove 53 is formed in a direction close to the upper surface of the upper plate 11, so that heat transfer between the first heating region 2 and the second heating region 3 can be avoided.
As shown in fig. 2-4, in some embodiments, the drainage portion 5 further includes a fourth heat insulation groove 54 disposed in the upper disc surface 11, the fourth heat insulation groove 54 is disposed outside the first heating zone 2, the fourth heat insulation groove 54 is configured to prevent heat of the first heating zone 2 from being emitted through the outer side of the upper disc surface 11, and by disposing the fourth heat insulation groove 54 outside the first heating zone 2, the fourth heat insulation groove 54 is configured to prevent heat of the first heating zone 2 from being emitted through the side surface of the upper disc surface 11.
As shown in fig. 2, in some embodiments, the apparatus further includes a cooling water channel 4, where the cooling water channel 4 is disposed on a side of the lower disc surface 12 away from the upper disc surface 11, the cooling water channel 4 cools the lower disc surface 12, so that the temperature of the lower disc surface 12 is always lower than the temperature of the upper disc surface 11, and by disposing the cooling water channel 4 at the bottom of the lower disc surface 12, the cooling water channel 4 cools the lower disc surface 12, so that the lower disc surface 12 is always kept at a relatively low temperature, and since heat is only conducted from a high temperature zone to a low temperature zone, the heat of the first heating zone 2 and the second heating zone 3 is transferred to the lower disc surface 12 and taken away by the cooling water channel 4, thereby avoiding heat crosstalk between the first heating zone 2 and the second heating zone 3.
In other embodiments, other ways of cooling the lower disc surface 12, such as fan cooling, radiator cooling, etc., may be used, and may be selected according to practical situations.
As shown in fig. 1, in some embodiments, the first heating zone 2 is disposed in a ring shape, the second heating zone 3 is disposed in a circular shape, the second heating zone 3 is disposed in an inner ring area of the first heating zone 2, the first heating zone 2 is disposed in a ring shape, the second heating zone 3 is disposed in an inner ring area of the first heating zone 2, and the first heating zone 2 and the second heating zone 3 implement heating at different areas of the wafer.
When a plurality of heating areas are required, the innermost heating area may be circular, and the remaining heating areas are sequentially annular and arranged outside, and a drainage portion 5 is provided between each adjacent heating areas to insulate heat.
As shown in fig. 2, in some embodiments, the first heating area 2 and the second heating area 3 are welded on a side of the lower disc surface 12 near the upper disc surface 11, the upper disc surface 11 and the lower disc surface 12 are connected by adopting a welding manner, and in the manufacturing process of the heating disc 1, the first heating area 2 and the second heating area 3 are all arranged on the top of the lower disc surface 12 by adopting the welding manner, so that the stability between the first heating area 2 and the second heating area 3 and the lower disc surface 12 is ensured, and meanwhile, the upper disc surface 11 and the lower disc surface 12 are connected by adopting the welding manner, so that the heating disc 1 is formed.
As shown in fig. 2-3, in some embodiments, the first heating zone 2 includes a first heating wire and a first thermocouple, where the first heating wire and the first thermocouple are welded on the lower disc surface 12 in a ring shape, and the first heating zone 2 is heated by setting a first electric heating wire, and the first thermocouple measures the temperature of the first heating zone 2 and converts the temperature by an external secondary instrument, so that a worker can intuitively know the temperature of the first heating zone 2;
the second heating zone 3 includes second heater strip and second thermocouple, second heater strip and second thermocouple become circular welding on lower quotation 12, heat the second heating zone 3 through setting up the second electric heater strip, the second thermocouple measures the temperature of the second heating zone 3 to change through outside secondary instrument, the staff of being convenient for knows directly perceivedly the temperature of the second heating zone 3.
As shown in fig. 2, in some embodiments, the apparatus further includes a heat stand column 6, where the heat stand column 6 is welded to the lower disc surface 12, and by welding the heat stand column 6 to the bottom of the lower disc surface 12, the heat stand column 6 can play a supporting role on the heating disc 1, so as to facilitate installation of the heating disc 1.
In some embodiments, the first heating area 2 and the second heating area 3 are controlled in an independent control manner to realize different temperatures of the first heating area 2 and the second heating area 3, and the first heating area 2 and the second heating area 3 are set in an independent control manner to facilitate the independent control of the temperatures of the first heating area 2 and the second heating area 3, so as to realize different temperatures of the first heating area 2 and the second heating area 3.
It should be noted that, the first heating area 2 and the second heating area 3 may be independently controlled by a control method such as chopping.
The same and similar parts of the embodiments in this specification are all mutually referred to, and each embodiment focuses on the differences from the other embodiments. In particular, for the method embodiments described later, since they correspond to the system, the description is relatively simple, and reference should be made to the description of some of the system embodiments.
The foregoing is merely specific embodiments of the present application, but the scope of the present application is not limited thereto, and any changes or substitutions easily conceivable by those skilled in the art within the technical scope of the present application should be covered in the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (8)
1. A multi-zone wafer heating apparatus comprising:
the heating plate comprises an upper plate surface and a lower plate surface;
the first heating area is arranged between the upper disc surface and the lower disc surface;
the second heating zone is arranged between the upper disc surface and the lower disc surface, and the second heating zone and the first heating zone are adjacently arranged;
the drainage part is arranged between the first heating area and the second heating area and is used for guiding heat adjacent to the first heating area and the second heating area to the lower disc surface so as to avoid heat crosstalk at the upper disc surface adjacent to the first heating area and the second heating area;
the drainage part comprises a first heat insulation groove and a second heat insulation groove which are arranged in the upper disc surface, the first heat insulation groove is arranged on one side of the first heating zone, which is close to the second heating zone, so that heat of the first heating zone bypasses the first heat insulation groove to be transferred to the lower disc surface, and the second heat insulation groove is arranged on one side of the second heating zone, which is close to the first heating zone, so that heat of the second heating zone bypasses the second heat insulation groove to be transferred to the lower disc surface;
the first heat insulation groove and the second heat insulation groove are arranged in the upper disc surface, and the grooving direction of the first heat insulation groove is close to one side of the upper disc surface, which is close to the lower disc surface;
the drainage part further comprises a fourth heat insulation groove arranged in the upper disc surface, the fourth heat insulation groove is arranged on the outer side of the first heating area and used for preventing heat of the first heating area from being emitted through the outer side of the upper disc surface.
2. The multi-zone wafer heating device of claim 1, wherein the drain further comprises a third thermally insulated channel open on the upper disk surface, the third thermally insulated channel disposed between the first thermally insulated channel and the second thermally insulated channel, the third thermally insulated channel isolating heat bypassing the first thermally insulated channel from heat bypassing the second thermally insulated channel to ensure heat transfer to the lower disk surface.
3. The multi-zone wafer heating device of any one of claims 1-2, further comprising a cooling water channel disposed on a side of the lower disk surface remote from the upper disk surface, the cooling water channel cooling the lower disk surface such that the temperature of the lower disk surface is always lower than the temperature of the upper disk surface.
4. The multi-zone wafer heating device of claim 1, wherein the first heating zone is annularly disposed and the second heating zone is circularly disposed, the second heating zone being within an inner annular region of the first heating zone.
5. The multi-zone wafer heating device of claim 4, wherein the first heating zone and the second heating zone are welded to a side of the lower plate surface adjacent to the upper plate surface, and the upper plate surface and the lower plate surface are connected by welding.
6. The multi-zone wafer heating device of claim 5, wherein the first heating zone comprises a first heating wire and a first thermocouple, the first heating wire and first thermocouple being annularly welded to the lower disk face;
and/or the second heating area comprises a second heating wire and a second thermocouple, and the second heating wire and the second thermocouple are welded on the lower disc surface in a circular shape.
7. The multi-zone wafer heating device of claim 1, further comprising a heat stand column welded between the heat stand column and the lower disk surface.
8. The multi-zone wafer heating apparatus of claim 1, wherein the first heating zone and the second heating zone are controlled in an independent control manner to achieve different temperatures of the first heating zone and the second heating zone.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202311685406.3A CN117393474B (en) | 2023-12-11 | 2023-12-11 | Wafer multizone heating device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202311685406.3A CN117393474B (en) | 2023-12-11 | 2023-12-11 | Wafer multizone heating device |
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| CN117393474A CN117393474A (en) | 2024-01-12 |
| CN117393474B true CN117393474B (en) | 2024-02-13 |
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| KR20050120494A (en) * | 2004-06-19 | 2005-12-22 | 주식회사 좋은기술 | Heat interference prevention type semiconductor wafer heating system |
| CN104112638A (en) * | 2013-04-22 | 2014-10-22 | 中微半导体设备(上海)有限公司 | Plasma reaction chamber and electrostatic chuck thereof |
| CN111199902A (en) * | 2018-11-19 | 2020-05-26 | 沈阳拓荆科技有限公司 | Thermally isolated wafer support device and method of making the same |
| CN111885755A (en) * | 2020-07-17 | 2020-11-03 | 常州铭赛机器人科技股份有限公司 | Wafer heating device with zone heating function, multi-station glue dispenser and wafer heating method |
| CN212381419U (en) * | 2020-07-17 | 2021-01-19 | 常州铭赛机器人科技股份有限公司 | Wafer heating device with zone heating function and multi-station glue dispenser |
| CN112614771A (en) * | 2021-01-08 | 2021-04-06 | 上海谙邦半导体设备有限公司 | Reaction chamber device and working method thereof |
| CN114959658A (en) * | 2021-02-24 | 2022-08-30 | 中国科学院微电子研究所 | Heating device and chemical vapor deposition equipment |
| CN116313878A (en) * | 2021-12-20 | 2023-06-23 | 中微半导体设备(上海)股份有限公司 | Susceptor, method of manufacturing susceptor, and plasma processing apparatus |
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| CN117393474A (en) | 2024-01-12 |
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