CN117393412A - Electrostatic chuck unit and plasma etching apparatus provided with same - Google Patents
Electrostatic chuck unit and plasma etching apparatus provided with same Download PDFInfo
- Publication number
- CN117393412A CN117393412A CN202311358447.1A CN202311358447A CN117393412A CN 117393412 A CN117393412 A CN 117393412A CN 202311358447 A CN202311358447 A CN 202311358447A CN 117393412 A CN117393412 A CN 117393412A
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- China
- Prior art keywords
- focus ring
- ring member
- electrostatic chuck
- wafer
- outer side
- Prior art date
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Links
- 238000001020 plasma etching Methods 0.000 title claims abstract description 28
- 238000005530 etching Methods 0.000 claims abstract description 31
- 239000012495 reaction gas Substances 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 21
- 230000008569 process Effects 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 12
- 238000003780 insertion Methods 0.000 claims description 9
- 230000037431 insertion Effects 0.000 claims description 9
- 239000010453 quartz Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910010293 ceramic material Inorganic materials 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 238000012423 maintenance Methods 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
An electrostatic chuck unit according to an embodiment of the present invention, which is provided in a plasma etching apparatus, may include: an electrostatic chuck on which a wafer is supported; and a focus ring disposed at an upper portion of the electrostatic chuck in such a manner as to surround a central portion of the electrostatic chuck and focusing a reaction gas for etching the wafer onto the wafer, the focus ring comprising: a first focus ring member surrounding a central portion of the electrostatic chuck; and a second focus ring member surrounding the first focus ring member.
Description
Technical Field
The present invention relates to an electrostatic chuck unit and a plasma etching apparatus including the same, and more particularly, to an electrostatic chuck unit and a plasma etching apparatus including the same, in which a focus ring is not an integral type but is composed of a first focus ring member and a second focus ring member, and therefore, only a damaged portion needs to be replaced when damage occurs, thereby enabling maintenance costs to be reduced.
Background
There are various processes for semiconductor manufacturing, including a plasma etching (etching) process for etching a substrate, i.e., a wafer, using a plasma etching apparatus. The plasma etching process is a process of removing a thin film of a wafer using plasma.
The etching process described above is to apply high frequency power to an upper electrode and a lower electrode disposed at a predetermined interval in an inner space of a sealed chamber where the process is performed to form an electric field, and to activate a reaction gas supplied to the inner space of the chamber by the electric field to form a plasma state, and then to etch a wafer placed on an electrostatic chuck with ions in the plasma state.
Plasma etching equipment requires Etch Uniformity (Etch Uniformity) control techniques to ensure that the inside and outside of the wafer are etched uniformly.
Here, the plasma must be uniformly formed on the entire upper surface of the wafer by a focus ring around the edge of the electrostatic chuck body located above the lower electrode.
The focus ring expands the electric field forming region formed at the upper portion of the electrostatic chuck body to be out of the region where the wafer is located by applying high frequency power, thereby placing the wafer at the center of the plasma forming region, and etching can be performed entirely.
Thus, the focus ring can collect plasma at an accurate position while fixing the wafer to maintain uniform plasma density, and can prevent contamination of the wafer side and perform an insulating function.
However, depending on the material of the focus ring mounted with the wafer, the width of the region, the etch uniformity is affected and thickness variations are created between the center/edge.
Therefore, there has been an attempt to improve etching uniformity by mounting a focus ring made of a ceramic material, but it is difficult to precisely reduce the standard deviation of the etching Rate (E/R, etch Rate) of the center/edge at the time of etching to judge process reproducibility.
Therefore, there is a need to develop a plasma etching apparatus having a new structure that improves reproducibility of etching uniformity by reducing the standard deviation of etching rate of the center/edge at the time of etching.
As related art, korean patent laid-open No. 10-2011-0080811 (title of the invention: electrostatic chuck unit, substrate processing apparatus provided with the same), and the like.
Disclosure of Invention
Technical problem
Embodiments of the present invention provide an electrostatic chuck unit and a plasma etching apparatus having the same, in which a focus ring is not an integral type, but is composed of a first focus ring member and a second focus ring member, and thus, only a damaged portion needs to be replaced when damage occurs, whereby maintenance costs can be reduced, and further, a standard deviation of an etching rate between a center and an edge can be reduced by a ratio of horizontal lengths of vertical sections of the first focus ring member and the second focus ring member, whereby excellent etching uniformity can be reproduced.
The problems to be solved by the present invention are not limited to the above-mentioned problems, and other problems not mentioned will be clearly understood by those skilled in the art from the following description.
Means for solving the problems
An electrostatic chuck unit according to an embodiment of the present invention, which is provided in a plasma etching apparatus, may include: an electrostatic chuck on which a wafer is supported; and a focus ring disposed at an upper portion of the electrostatic chuck in such a manner as to surround a central portion of the electrostatic chuck and focusing a reaction gas for etching the wafer onto the wafer, the focus ring may include: a first focus ring member surrounding a central portion of the electrostatic chuck; and a second focus ring member surrounding the first focus ring member.
According to one side, a stepped portion may be provided at an upper end portion of an inner side surface of the first focus ring member to fix the wafer.
According to one side, the outer side surface of the first focus ring member may form an extension portion of which a lower end portion extends outward and has a vertical cross section of a "+" shape, and the inner side surface of the second focus ring member may form an extension portion of which an upper end portion extends inward and has a vertical cross section of a "+" shape, and the second focus ring member may be matingly coupled to the first focus ring member through the extension portion of the first focus ring member and the extension portion of the second focus ring member.
According to one side surface, a protrusion protruding outward is provided on the outer side surface of the first focus ring member, and an insertion groove into which the protrusion is inserted is provided on the inner side surface of the second focus ring member, whereby the second focus ring member can be prevented from rotating relative to the first focus ring member.
According to one aspect, the focus ring may further comprise a third focus ring member surrounding an outer side of the second focus ring member and an outer side of the electrostatic chuck.
According to one side surface, the outer side surface of the second focus ring member may form an extension portion of which a lower end portion extends outward, and may have a vertical cross section in a # -shape, and an insertion groove into which the extension portion of the second focus ring member is inserted may be provided in the inner side surface of the third focus ring member.
According to one side, the first focus ring member may be made of a quartz material or a silicon series material, and the second focus ring member may be made of a ceramic material or alumina.
According to one aspect, the ratio of the horizontal length of the first focus ring member relative to the vertical cross-section of the second focus ring member may be 1:1 or less.
In addition, the plasma etching apparatus according to an embodiment of the present invention may include: a chamber forming a process space for performing a plasma etching process; an electrostatic chuck unit disposed in the chamber, the electrostatic chuck unit comprising: an electrostatic chuck on which a wafer is supported; and a focus ring disposed at an upper portion of the electrostatic chuck in such a manner as to surround a central portion of the electrostatic chuck and focusing a reaction gas for etching the wafer onto the wafer, the focus ring comprising: a first focus ring member surrounding a central portion of the electrostatic chuck; and a second focus ring member surrounding the first focus ring member.
Effects of the invention
According to the embodiment of the present invention, since the focus ring is not an integral type but is constituted by the first focus ring member and the second focus ring member, only the damaged portion needs to be replaced when damage occurs, so that maintenance costs can be reduced, and also, excellent etching uniformity can be reproduced by reducing the standard deviation of the etching rate between the center and the edge according to the ratio of the horizontal lengths of the vertical sections of the first focus ring member and the second focus ring member.
Drawings
Fig. 1 is a view schematically showing the structure of an electrostatic chuck unit in a plasma etching processing apparatus according to an embodiment of the present invention.
Fig. 2 is a perspective view, cut away to reveal a section of the electrostatic chuck unit of fig. 1.
Fig. 3 is a table showing experimental results according to various focus rings in a plasma etching apparatus having an electrostatic chuck unit according to an embodiment of the present invention.
Fig. 4 is a table showing experimental results according to a ratio of a first focus ring member and a second focus ring member of a focus ring in a plasma etching apparatus having an electrostatic chuck unit according to an embodiment of the present invention.
(description of the reference numerals)
100: electrostatic chuck unit 110: electrostatic chuck
111: the body portion 115 of the electrostatic chuck: center portion of electrostatic chuck
120: focus ring 130: first focus ring member
135: protrusion 140: second focus ring member
145: insertion groove 150: third focusing ring member
Detailed Description
The advantages and/or features of the present invention and the method of accomplishing the same may be understood clearly by reference to the examples detailed herein and the accompanying drawings. However, the present invention is not limited to the embodiments described below, but may be embodied in other various forms, but the present embodiment is for fully disclosing the present invention and providing a full scope of the present invention to one of ordinary skill in the art, and the present invention is defined only by the scope of the claims. Like reference numerals refer to like elements throughout the specification.
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
Fig. 1 is a view schematically showing the structure of an electrostatic chuck unit in a plasma etching apparatus according to an embodiment of the present invention, and fig. 2 is a perspective view cut away to reveal a section of the electrostatic chuck unit of fig. 1.
The present invention does not illustrate the overall structure of a plasma etching apparatus according to an embodiment, and in a case of roughly explaining the structure thereof, the plasma etching apparatus of the present embodiment may include: a chamber forming a space for an etching process; an electrostatic chuck unit 100 for supporting a wafer W; a plasma generating section for generating plasma; and a gas supply part for supplying a reaction gas.
With the above structure, a plasma etching process can be performed on the wafer W.
As shown in fig. 1 and 2, an electrostatic chuck unit 100 according to an embodiment of the present invention may include: an electrostatic chuck 110 on which a wafer W is supported; and a focus ring 120 disposed at an upper portion of the electrostatic chuck 110 in such a manner as to surround a central portion 115 of the electrostatic chuck 110, and focusing a reaction gas for etching the wafer W onto the wafer W.
Here, the focus ring 120 of the present embodiment is not formed as a single body, but is made of a plurality of members that can be coupled to each other in a matching manner, as will be described later, and thus, not only the electrostatic chuck 110 can be protected, but also only the damaged focus ring 120 can be replaced when damage occurs, and thus, maintenance costs can be reduced as compared with the conventional one.
First, as shown in fig. 1 and 2, the electrostatic chuck 110 of the present embodiment is configured to support a wafer W to be plasma etched, and has a circular plate shape as a whole, and may have a stepped shape with a central portion 115 protruding according to the size of the wafer W.
For example, there are various sizes of the wafer W, such as 4 inches, 6 inches, 8 inches, and 12 inches, and for example, when etching the 12-inch wafer W, the electrostatic chuck 110 having the center portion 115 conforming to the 12-inch wafer W may be provided, and a plasma etching apparatus having such an electrostatic chuck 110 may be applied.
The base portion of the electrostatic chuck 110 may be made of aluminum, the center portion 115 may be made of ceramic, and in particular, the body portion 111 may be hard anodized (hard anodized) aluminum.
Thereby, the electrostatic chuck 110 itself can be protected. In other words, when the etching process is performed on the wafer W, a short circuit or plasma electro-sputtering may occur, but this may be prevented by manufacturing the electrostatic chuck 110 from the above-described materials.
In addition, not only can the etching process be properly performed, but also the electrostatic chuck 110 can be protected by the focus ring 120 surrounding the electrostatic chuck 110.
As described above, the focus ring 120 of the present embodiment is not formed as a single body, but may be completed by coupling a plurality of ring members 130, 140, 150 made of different materials to each other in a matched manner.
As shown in fig. 2, the focus ring 120 may include: a first focus ring member 130 surrounding the central portion 115 of the electrostatic chuck 110; and a second focus ring member 140 surrounding the first focus ring member 130. Although the first focus ring member and the second focus ring member are separated from each other, they have shapes that match each other, and thus, bonding and separation are easily performed, but remain strong at the time of bonding.
First, as shown in fig. 1 and 2, the first focus ring member 130 of the present embodiment may be provided in a ring shape surrounding the center portion 115 of the electrostatic chuck 110 supporting the wafer W. A stepped portion 130a is provided at the upper end portion, and an outer edge of the wafer W may be fixed by the stepped portion 130 a. In other words, the upper surface of the stepped portion 130a of the wafer W and the upper surface of the electrostatic chuck 110 form the same surface, and thus, the wafer W can be firmly supported and fixed.
However, when the step portion 130a has corners, the outer edge of the wafer W may be damaged, and thus, a round (rounding) process may be performed on the inner curved portion of the step portion 130 a.
As shown in fig. 2, the outer portion of the first focus ring member 130 may have an extension 130b having a lower end portion longer to the outside than an upper end portion, and may have a vertical cross section having a +' shape as a whole.
Further, in order to correspond to the shape of the outer side portion of the first focus ring member 130, the inner side surface of the second focus ring member 140 may have an extension 140a whose upper end portion is formed to be longer inward than the lower end portion, and have a vertical cross section of a "reverse" shape. In other words, by the outer side portion of the first focus ring member 130 and the outer side portion of the second focus ring member 140 having the shape inverted from each other, the first focus ring member 130 and the second focus ring member 140 can be coupled to each other in a mating manner.
First, after the first focus ring member 130 is disposed, the second focus ring member 140 is disposed thereon, and then, is moved downward, whereby the second focus ring member 140 can be simply and accurately coupled to the first focus ring member 130.
However, it is necessary to accurately align the first focus ring member 130 with the position of the second focus ring member 140 while preventing rotation, and for this reason, the focus ring 120 of the present embodiment has an alignment and anti-rotation structure as shown in fig. 2.
Referring to fig. 2, a protrusion 135 protruding outward may be provided at an outer side surface of the first focus ring member 130, and an insertion groove 145 into which the protrusion 135 is inserted may be provided at an inner side surface of the second focus ring member 140. With the structure, when the first focus ring member 130 is coupled with the second focus ring member 140, alignment can be performed on these, and the second focus ring member 140 can be prevented from rotating relative to the first focus ring member 130.
As described above, the focus ring 120 of the present embodiment is not an integral type, but is configured by the first focus ring member 130 and the second focus ring member 140, and therefore, when damage occurs, only the damaged portion needs to be replaced, so maintenance costs can be reduced. In addition, due to the material characteristics, not only the electrostatic chuck 110 can be well protected, but also the process conditions can be improved.
In addition, as described above, the first and second focus ring members 130 and 140 may be made of different materials.
For example, the first focus ring member 130 may be made of a quartz material having similar properties to the wafer W. However, it is not limited thereto, and may be made of, for example, silicon or silicon series materials such as silicon carbide.
Thus, the first focus ring member 130 is made of, for example, quartz of an insulating material, and thus, the electrostatic chuck 110 can be protected. In particular, by covering the main body portion 111 made of aluminum in the electrostatic chuck 110, the process conditions can be further improved.
The second focus ring member 140 of the present embodiment may be made of a ceramic material. However, the present invention is not limited thereto, and the second focus ring member 140 may be made of alumina or the like.
In addition, as shown in fig. 2, the focus ring 120 of the present embodiment may include a third focus ring member 150 surrounding the outer side surface of the second focus ring member 140 and the outer side surface of the electrostatic chuck 110, in addition to the first focus ring member 130 and the second focus ring member 140.
Referring to fig. 2, an extension portion 140b, in which the lower end portion extends outward, is formed on the outer side surface of the second focus ring member 140, and has a substantially +' shaped vertical cross section, and in response thereto, an insertion groove 150a into which the extension portion 140b of the second focus ring member 140 is inserted may be provided on the inner side surface of the third focus ring member 150.
With this coupling structure, the third focus ring member 150 can firmly maintain not only the position of the second focus ring member 140 but also the position of the first focus ring member 130 coupled therein, and thus, the plasma etching process on the wafer W can be reliably performed on the electrostatic chuck 110.
In addition, according to the ratio of the horizontal length B (refer to fig. 2) of the vertical section of the first focus ring member 130 and the horizontal length a (refer to fig. 2) of the vertical section of the second focus ring member 140, the standard deviation of the etching rate between the center and the edge is reduced, and thus, excellent etching uniformity can be reproduced. This will be described with reference to the drawings.
Fig. 3 is a table showing experimental results according to various focus rings in a plasma etching apparatus having an electrostatic chuck unit according to an embodiment of the present invention.
As shown in the figure, when the focus rings are all made of quartz material, the circuit line width (CD, critical Dimension) at the bottom of the center of the wafer W is 1.23mm, and the circuit line width at the bottom of the edge (edge at 5mm of the outer edge of the wafer) is 1.15mm.
However, the focus ring 120 of the present embodiment is provided with the first focus ring member 130 made of quartz and the second focus ring member 140 made of ceramic, and when the diameter of the first focus ring member 130 is the focus ring 120 of 170mm, the circuit line width (CD, critical Dimension) of the center bottom is 1.30mm, and the circuit line width of the edge bottom is 1.27mm.
In addition, fig. 3 shows a case where the diameter of the first focus ring member made of quartz is 190mm, 210mm, and it is known that when the diameter of the first focus ring member 130 is 170mm, the deviation of the circuit line width between the center and the edge is minimum, that is, the deviation of the etching rate is minimum, whereby excellent etching uniformity can be reproduced.
In addition, fig. 4 is a table showing experimental results according to the ratio of the first focus ring member and the second focus ring member of the focus ring in the plasma etching apparatus having the electrostatic chuck unit according to an embodiment of the present invention.
Referring to fig. 4, there are shown a total of 4 cases including a case where the focus ring is made entirely of quartz, a case where the ratio of the horizontal length of the first focus ring member 130 to the vertical section of the second focus ring member 140 is 1:2, and a case where 1:1.5, the present embodiment being 1:1 or less.
Wherein when the ratio of the horizontal length B of the vertical section of the first focus ring member 130 to the horizontal length a of the vertical section of the second focus ring member 140 (refer to fig. 2) is 1:1 or less, the circuit line width (CD, critical Dimension) at the bottom of the center is 1.30mm, and the circuit line width at the bottom of the edge (edge at 5mm of the outer edge of the wafer) is 1.27mm. The standard deviation of the circuit line width is the smallest and excellent etching uniformity can be reproduced.
As such, according to the present embodiment, since the focus ring 120 is not an integral type but is made of the first focus ring member 130 and the second focus ring member 140, when damage occurs, only the damaged portion needs to be replaced, so maintenance costs can be reduced.
In addition, by reducing the standard deviation of the etching rate between the center and the edge according to the ratio of the horizontal lengths of the vertical sections of the first focus ring member 130 and the second focus ring member 140, excellent etching uniformity can be reproduced.
The above description has been given of specific embodiments according to the present invention, and of course, various modifications may be made without departing from the scope of the invention. The scope of the invention should, therefore, be determined not with reference to the above-described embodiments, but instead should be determined with reference to the appended claims along with their full scope of equivalents.
As described above, while the present invention has been described with reference to the limited embodiments and drawings, the present invention is not limited to the above-described embodiments, and various modifications and variations may be made by those skilled in the art in light of the above description. Therefore, the spirit of the invention should be construed only by the scope of the appended claims, and all equivalent or equivalent modifications thereof should fall within the scope of the spirit of the invention.
Claims (6)
1. An electrostatic chuck unit provided in a plasma etching apparatus, characterized in that,
comprising the following steps:
an electrostatic chuck on which a wafer is supported; and
a focus ring disposed at an upper portion of the electrostatic chuck in such a manner as to surround a central portion of the electrostatic chuck and focusing a reaction gas for etching the wafer onto the wafer,
the focus ring includes:
a first focus ring member surrounding a central portion of the electrostatic chuck;
a second focus ring member surrounding the first focus ring member; and
a third focus ring member surrounding an outer side surface of the second focus ring member and an outer side surface of the electrostatic chuck,
a protrusion protruding outward is provided on an outer side surface of the first focus ring member, an insertion groove into which the protrusion is inserted is provided on an inner side surface of the second focus ring member, thereby preventing rotation of the second focus ring member with respect to the first focus ring member,
the outer side surface of the second focus ring member forms an extension portion of which the lower end portion extends outward and has a vertical cross section in a "+",
an insertion groove into which the extension portion of the second focus ring member is inserted is provided at an inner side surface of the third focus ring member.
2. The electrostatic chuck unit according to claim 1, wherein,
a stepped portion is provided at an upper end portion of an inner side surface of the first focus ring member to fix the wafer.
3. The electrostatic chuck unit according to claim 2, wherein the outer side surface of the first focus ring member forms an extended portion of which the lower end portion is extended to the outside and has a vertical cross section in a "+" shape,
the inner side surface of the second focus ring member forms an extension portion of which upper end portion extends inward, and has a vertical section in a L shape,
the second focus ring member is matingly coupled to the first focus ring member by the extension of the first focus ring member and the extension of the second focus ring member.
4. The electrostatic chuck unit according to claim 1, wherein,
the first focus ring member is made of a quartz material or a silicon series material,
the second focus ring member is made of a ceramic material or alumina.
5. The electrostatic chuck unit according to claim 4, wherein,
the ratio of the horizontal length of the first focus ring member relative to the vertical cross section of the second focus ring member is 1:1 or less.
6. A plasma etching apparatus, comprising:
a chamber forming a process space for performing a plasma etching process; and
an electrostatic chuck unit disposed in the chamber,
the electrostatic chuck unit includes:
an electrostatic chuck on which a wafer is supported; and
a focus ring disposed at an upper portion of the electrostatic chuck in such a manner as to surround a central portion of the electrostatic chuck and focusing a reaction gas for etching the wafer onto the wafer,
the focus ring includes:
a first focus ring member surrounding a central portion of the electrostatic chuck;
a second focus ring member surrounding the first focus ring member; and
a third focus ring member surrounding an outer side surface of the second focus ring member and an outer side surface of the electrostatic chuck,
a protrusion protruding outward is provided on an outer side surface of the first focus ring member, an insertion groove into which the protrusion is inserted is provided on an inner side surface of the second focus ring member, thereby preventing rotation of the second focus ring member with respect to the first focus ring member,
the outer side surface of the second focus ring member forms an extension portion of which the lower end portion extends outward and has a vertical cross section in a "+",
an insertion groove into which the extension portion of the second focus ring member is inserted is provided at an inner side surface of the third focus ring member.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020220189808A KR102562892B1 (en) | 2022-12-29 | 2022-12-29 | Electrostatic chuck unit and plasma etching apparatus having the same |
| KR10-2022-0189808 | 2022-12-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117393412A true CN117393412A (en) | 2024-01-12 |
Family
ID=87567891
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311358447.1A Pending CN117393412A (en) | 2022-12-29 | 2023-10-19 | Electrostatic chuck unit and plasma etching apparatus provided with same |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR102562892B1 (en) |
| CN (1) | CN117393412A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08339895A (en) * | 1995-06-12 | 1996-12-24 | Tokyo Electron Ltd | Plasma processing device |
| CN1534737A (en) * | 2003-03-27 | 2004-10-06 | ���µ�����ҵ��ʽ���� | Dry etching device and dry etching method |
| KR20070008980A (en) * | 2005-07-14 | 2007-01-18 | 삼성전자주식회사 | Etching equipment for fabricating semiconductor device and chuck assembly used in the equipment |
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| JP2003257935A (en) * | 2002-03-05 | 2003-09-12 | Tokyo Electron Ltd | Plasma treatment apparatus |
| KR20070016312A (en) * | 2005-08-03 | 2007-02-08 | 삼성전자주식회사 | Process chamber of rapid thermal processor |
| JP5690596B2 (en) * | 2011-01-07 | 2015-03-25 | 東京エレクトロン株式会社 | Focus ring and substrate processing apparatus having the focus ring |
| JP5893516B2 (en) * | 2012-06-22 | 2016-03-23 | 東京エレクトロン株式会社 | Processing apparatus for processing object and mounting table for processing object |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08339895A (en) * | 1995-06-12 | 1996-12-24 | Tokyo Electron Ltd | Plasma processing device |
| CN1534737A (en) * | 2003-03-27 | 2004-10-06 | ���µ�����ҵ��ʽ���� | Dry etching device and dry etching method |
| KR20070008980A (en) * | 2005-07-14 | 2007-01-18 | 삼성전자주식회사 | Etching equipment for fabricating semiconductor device and chuck assembly used in the equipment |
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