CN117374728A - Distributed feedback type semiconductor laser diode and preparation method thereof - Google Patents
Distributed feedback type semiconductor laser diode and preparation method thereof Download PDFInfo
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- CN117374728A CN117374728A CN202311652893.3A CN202311652893A CN117374728A CN 117374728 A CN117374728 A CN 117374728A CN 202311652893 A CN202311652893 A CN 202311652893A CN 117374728 A CN117374728 A CN 117374728A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 98
- 238000002360 preparation method Methods 0.000 title abstract description 4
- 239000000758 substrate Substances 0.000 claims abstract description 103
- 239000002184 metal Substances 0.000 claims abstract description 22
- 230000010363 phase shift Effects 0.000 claims abstract description 19
- 239000011248 coating agent Substances 0.000 claims abstract description 14
- 238000000576 coating method Methods 0.000 claims abstract description 14
- 238000007747 plating Methods 0.000 claims abstract description 4
- 238000000151 deposition Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000002310 reflectometry Methods 0.000 claims description 4
- 238000013461 design Methods 0.000 description 7
- 238000013016 damping Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention discloses a distributed feedback type semiconductor laser diode and a preparation method thereof, comprising the following steps: a layer of n-or p-doped semiconductor substrate; a lower substrate layer deposited on the semiconductor substrate layer and having the same doping type as the semiconductor substrate layer; a semiconductor active layer formed on the lower substrate layer; a diffraction grating structure for generating a single longitudinal mode is embedded in the semiconductor active layer; the diffraction grating structure comprises a phase shift grating region; an upper substrate layer deposited on the semiconductor active layer and having a doping type opposite to that of the semiconductor substrate layer; a metal conductive layer deposited on the upper substrate layer and having the same doping type as the semiconductor substrate layer; front end surface coating films arranged at the front ends of the semiconductor substrate layer, the lower substrate layer, the semiconductor active layer, the upper substrate layer and the metal conductive layer; and plating films on the rear end surfaces of the rear ends of the semiconductor substrate layer, the lower substrate layer, the semiconductor active layer, the upper substrate layer and the metal conductive layer.
Description
Technical Field
The invention relates to the technical field of distributed feedback laser diodes, in particular to a distributed feedback semiconductor laser diode and a preparation method thereof.
Background
In distributed feedback laser diode design, some applications of analog laser diodes require optimization with a minimum Relative Intensity Noise (RIN) and Noise Figure (NF) as the target and maintain a constant amplitude of the laser frequency response (S21), i.e., a flatter frequency response curve is required. However, conventional approaches have been to improve RIN and NF by increasing the cavity length of the resonant cavity or increasing the vertical plane reflectivity of the FP laser. However, the flatness of the constant amplitude (S21) is affected by the bias level and the cavity damping.
It is well known that in the frequency range from dc to about 2GHz, the Noise Figure (NF) is mainly affected by competition of side modes in the spectrum, and thus improving the side mode rejection ratio will increase the Relative Intensity Noise (RIN) and noise figure in the low frequency range. In the frequency range above 3 GHz, the noise figure and the relative intensity noise will be strongly influenced by the frequency response characteristics of the laser, in particular the relaxation oscillation frequency and the damping of the laser.
Therefore, there is an urgent need to provide a distributed feedback type semiconductor laser diode with simple structure and reliable design and a method for manufacturing the same.
Disclosure of Invention
In view of the above problems, the present invention aims to provide a distributed feedback semiconductor laser diode and a method for manufacturing the same, and the technical scheme adopted by the present invention is as follows:
in a first aspect, the present technology provides a distributed feedback semiconductor laser diode comprising:
a layer of n-or p-doped semiconductor substrate;
a lower substrate layer deposited on the semiconductor substrate layer and having the same doping type as the semiconductor substrate layer;
a semiconductor active layer formed on the lower substrate layer; a diffraction grating structure for generating a single longitudinal mode is embedded in the semiconductor active layer; the diffraction grating structure comprises a phase shift grating region;
an upper substrate layer deposited on the semiconductor active layer and having a doping type opposite to that of the semiconductor substrate layer;
a metal conductive layer deposited on the upper substrate layer and having the same doping type as the semiconductor substrate layer;
front end surface coating films arranged at the front ends of the semiconductor substrate layer, the lower substrate layer, the semiconductor active layer, the upper substrate layer and the metal conductive layer;
and plating films on the rear end surfaces of the rear ends of the semiconductor substrate layer, the lower substrate layer, the semiconductor active layer, the upper substrate layer and the metal conductive layer;
the distance between the center of the phase shift grating region and the front end surface coating film is 110um.
In a second aspect, the present technology provides a method for manufacturing a distributed feedback semiconductor laser diode, comprising the steps of:
providing a layer of n-or p-type doped semiconductor substrate layer;
depositing a lower substrate layer over the semiconductor substrate layer; the doping types of the lower substrate layer and the semiconductor substrate layer are the same;
forming a semiconductor active layer on the lower substrate layer; a diffraction grating structure for generating a single longitudinal mode is embedded in the semiconductor active layer; the diffraction grating structure comprises a phase shift grating region;
depositing an upper substrate layer on the semiconductor active layer; the doping types of the upper substrate layer and the semiconductor substrate layer are opposite;
depositing a metal conductive layer on the upper substrate layer; the doping types of the metal conducting layer and the semiconductor substrate layer are the same;
front end surface coating films are arranged at the front ends of the semiconductor substrate layer, the lower substrate layer, the semiconductor active layer, the upper substrate layer and the metal conducting layer;
and a rear end surface coating film is arranged at the rear ends of the semiconductor substrate layer, the lower substrate layer, the semiconductor active layer, the upper substrate layer and the metal conductive layer.
Compared with the prior art, the invention has the following beneficial effects:
the invention skillfully arranges the phase shift grating region in the semiconductor active layer, and selects the length of the corresponding phase shift grating region according to the required damping intensity, wherein the length of the phase shift grating region ranges from hundreds of nanometers to 2/3 of the laser cavity length. The present invention provides lateral light guiding through buried heterostructures. The present invention can change the local light intensity by changing the length of the phase shift region and the intensity (KL) of the grating. In addition, the invention provides transverse light guiding and a diffraction grating structure by burying the heterostructure to generate a single longitudinal mode, thereby effectively reducing leakage current and improving the effective bandwidth of the device.
In conclusion, the invention has the advantages of simple structure, reliable design, variable local light intensity and the like, and has high practical value and popularization value in the technical field of distributed feedback laser diodes.
Drawings
For a clearer description of the technical solutions of the embodiments of the present invention, the drawings to be used in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present invention and should not be considered as limiting the scope of protection, and other related drawings may be obtained according to these drawings without the need of inventive effort for a person skilled in the art.
Fig. 1 is a graph of the optical mode intensity profile of a DFB laser of the present invention with a uniform grating having a grating intensity of about 3.
Fig. 2 is a schematic diagram of a semiconductor laser according to the present invention.
Fig. 3 is an exemplary optical mode intensity distribution for a DFB laser of the present invention having a KL value of 2.99 with chirped gratings and ¼ wave phase shifted gratings.
Fig. 4 shows the optical mode intensity distribution of ¼ wave phase shifted grating DFB lasers according to the present invention at different grating intensities (KL) values.
Fig. 5 is an S21 simulation test chart in the present invention.
Fig. 6 is a noise test chart in the present invention.
In the above figures, the reference numerals correspond to the component names as follows:
1. a semiconductor substrate layer; 2. a lower substrate layer; 3. a semiconductor active layer; 4. an upper substrate layer; 5. a metal conductive layer; 6. a phase shift grating region; 7. coating a film on the front end surface; 8. and (5) coating the rear end surface.
Detailed Description
For the purposes, technical solutions and advantages of the present application, the present invention will be further described with reference to the accompanying drawings and examples, and embodiments of the present invention include, but are not limited to, the following examples. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are within the scope of the present application based on the embodiments herein.
In this embodiment, the term "and/or" is merely an association relationship describing the association object, and indicates that three relationships may exist, for example, a and/or B may indicate: a exists alone, A and B exist together, and B exists alone.
The terms first and second and the like in the description and in the claims of the present embodiment are used for distinguishing between different objects and not for describing a particular sequential order of objects. For example, the first target object and the second target object, etc., are used to distinguish between different target objects, and are not used to describe a particular order of target objects.
In the embodiments of the present application, words such as "exemplary" or "such as" are used to mean serving as examples, illustrations, or descriptions. Any embodiment or design described herein as "exemplary" or "for example" should not be construed as preferred or advantageous over other embodiments or designs. Rather, the use of words such as "exemplary" or "such as" is intended to present related concepts in a concrete fashion.
In the description of the embodiments of the present application, unless otherwise indicated, the meaning of "a plurality" means two or more. For example, the plurality of processing units refers to two or more processing units; the plurality of systems means two or more systems.
As shown in fig. 1 to 6, the present embodiment provides a distributed feedback type semiconductor laser diode, which includes: the semiconductor device comprises a semiconductor substrate layer 1 doped with n-or p-type, a lower substrate layer 2 deposited on the semiconductor substrate layer 1 and having the same doping type as the semiconductor substrate layer, a semiconductor active layer 3 formed on the lower substrate layer 2, an upper substrate layer 4 deposited on the semiconductor active layer 3 and having the opposite doping type as the semiconductor substrate layer 1, a metal conductive layer 5 deposited on the upper substrate layer 4 and having the same doping type as the semiconductor substrate layer, a front end surface coating film 7 arranged at the front ends of the semiconductor substrate layer 1, the lower substrate layer 2, the semiconductor active layer 3, the upper substrate layer 4 and the metal conductive layer 5, and a rear end surface coating film 8 at the rear ends of the semiconductor substrate layer 1, the lower substrate layer 2, the semiconductor active layer 3, the upper substrate layer 4 and the metal conductive layer 5. Wherein, a diffraction grating structure for generating a single longitudinal mode is embedded in the semiconductor active layer 3; the diffraction grating structure comprises phase-shift grating regions 6; the semiconductor active layer comprises a waveguide layer and a gain layer; the diffraction grating structure is arranged in the gain layer; the waveguide layer is disposed on the lower substrate layer. The semiconductor active layer has a tensile or compressive strain of between 0.5% and 2% in length relative to the underlying substrate layer.
In this embodiment, the distance between the center of the phase shift grating region 6 and the front surface plating film 7 is 110um. The length of the phase shift grating region is from a few hundred nanometers to 2/3 of the laser cavity length. The specific length of the damping force is determined by damping strength required by a user, and the damping force is obtained through simulation calculation, wherein the simulation belongs to conventional technical means.
Wherein, a ridge waveguide structure is formed between the metal conductive layer and the upper substrate layer; the ridge waveguide structure provides lateral light guiding. In the present embodiment, the semiconductor material such as the semiconductor substrate layer 1 and the semiconductor active layer 3 is an alloy of AlGaInAsP.
In this embodiment, the grating intensity kL is about 3, the back facet reflectivity HR is about 95%, and the front facet reflectivity AR is about 0% for a uniform grating without phase shift, depending on the variation of the light intensity and the facet phase, as seen in fig. 1 for a case 40 microns from the back facet. The width of the phase shift section and the overall diffraction grating is typically 2 times the width of the ridge waveguide to accommodate process errors. The height of the diffraction grating is 10 to 60 nanometers. The phase of the phase shifted segment ranges from 0.3pi to pi.
In addition, this embodiment is directed to a single transverse mode DFB laser having a length of 150 microns, wherein the back facet is highly reflective, preferably greater than 99%, and the front facet is antireflective, preferably less than 0.5%. The grating has a phase shifted portion and its center is 110 microns from the front facet. The present embodiment can change the local light intensity by changing the length of the phase shift region and the intensity (KL) of the grating, as shown in fig. 3 and 4.
As shown in fig. 5 to 6, the example of the present embodiment uses different intra-cavity diffraction grating designs to obtain different calculation results of the DFB laser S21, see fig. 5. For the case of a uniform grating (black curve), S21 peaks at about 14GHz and its amplitude varies with frequency. In contrast, ¼ wave phase-shifted gratings have a length of 60um and an amplitude that remains substantially constant below about 12GHz, whereas chirped gratings with a length of 20um are less flat in amplitude but have a higher 3dB bandwidth. In contrast, for the case of a standard ¼ wave phase shifted grating (phase shift portion length less than 1 um), the device may be overdamped. In this case, the noise figure can be improved. This is a great advantage for applications where the 3dB bandwidth requirement is less than 16 GHz.
The above embodiments are only preferred embodiments of the present invention and are not intended to limit the scope of the present invention, but all changes made by adopting the design principle of the present invention and performing non-creative work on the basis thereof shall fall within the scope of the present invention.
Claims (5)
1. A distributed feedback semiconductor laser diode, comprising:
a layer of n-or p-doped semiconductor substrate;
a lower substrate layer deposited on the semiconductor substrate layer and having the same doping type as the semiconductor substrate layer;
a semiconductor active layer formed on the lower substrate layer; a diffraction grating structure for generating a single longitudinal mode is embedded in the semiconductor active layer; the diffraction grating structure comprises a phase shift grating region;
an upper substrate layer deposited on the semiconductor active layer and having a doping type opposite to that of the semiconductor substrate layer;
a metal conductive layer deposited on the upper substrate layer and having the same doping type as the semiconductor substrate layer;
front end surface coating films arranged at the front ends of the semiconductor substrate layer, the lower substrate layer, the semiconductor active layer, the upper substrate layer and the metal conductive layer;
and plating films on the rear end surfaces of the rear ends of the semiconductor substrate layer, the lower substrate layer, the semiconductor active layer, the upper substrate layer and the metal conductive layer;
the distance between the center of the phase shift grating region and the front end surface coating film is 110um.
2. A distributed feedback semiconductor laser diode as in claim 1 wherein the semiconductor active layer comprises a waveguide layer and a gain layer; the diffraction grating structure is arranged in the gain layer; the waveguide layer is disposed on the lower substrate layer.
3. A distributed feedback semiconductor laser diode according to any of claims 1-2, wherein the semiconductor active layer has a tensile or compressive strain of between 0.5% and 2% in length relative to the underlying substrate layer.
4. A distributed feedback semiconductor laser diode as in claim 1 wherein the front facet coating has a reflectivity of less than 0.5%.
5. A method of manufacturing a distributed feedback semiconductor laser diode according to any one of claims 1 to 4, comprising the steps of:
providing a layer of n-or p-type doped semiconductor substrate layer;
depositing a lower substrate layer over the semiconductor substrate layer; the doping types of the lower substrate layer and the semiconductor substrate layer are the same;
forming a semiconductor active layer on the lower substrate layer; a diffraction grating structure for generating a single longitudinal mode is embedded in the semiconductor active layer; the diffraction grating structure comprises a phase shift grating region;
depositing an upper substrate layer on the semiconductor active layer; the doping types of the upper substrate layer and the semiconductor substrate layer are opposite;
depositing a metal conductive layer on the upper substrate layer; the doping types of the metal conducting layer and the semiconductor substrate layer are the same;
front end surface coating films are arranged at the front ends of the semiconductor substrate layer, the lower substrate layer, the semiconductor active layer, the upper substrate layer and the metal conducting layer;
and a rear end surface coating film is arranged at the rear ends of the semiconductor substrate layer, the lower substrate layer, the semiconductor active layer, the upper substrate layer and the metal conductive layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311652893.3A CN117374728A (en) | 2023-12-05 | 2023-12-05 | Distributed feedback type semiconductor laser diode and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202311652893.3A CN117374728A (en) | 2023-12-05 | 2023-12-05 | Distributed feedback type semiconductor laser diode and preparation method thereof |
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5155738A (en) * | 1989-10-31 | 1992-10-13 | The Furakawa Electric Co., Ltd. | Semiconductor laser elements |
| CN101599616A (en) * | 2008-06-03 | 2009-12-09 | 株式会社理光 | Vcsel, device, optical scanning device and imaging device |
| CN103151702A (en) * | 2013-03-13 | 2013-06-12 | 常州工学院 | Phase shift electric control distributed feedback (DFB) semiconductor laser device and manufacturing method thereof |
| CN103812002A (en) * | 2012-11-07 | 2014-05-21 | 无锡华御信息技术有限公司 | Semiconductor distributed feedback laser |
| CN114284865A (en) * | 2021-12-24 | 2022-04-05 | 中国科学院半导体研究所 | Active feedback distributed feedback laser and manufacturing method thereof |
| CN115528537A (en) * | 2022-08-26 | 2022-12-27 | 江苏华兴激光科技有限公司 | Method for manufacturing GaAs-based narrow-linewidth red laser chip |
| CN116454728A (en) * | 2023-06-16 | 2023-07-18 | 上海三菲半导体有限公司 | Distributed feedback laser diode, application and preparation method |
| CN116544782A (en) * | 2023-06-16 | 2023-08-04 | 上海三菲半导体有限公司 | Distributed feedback semiconductor laser diode, application and preparation method |
-
2023
- 2023-12-05 CN CN202311652893.3A patent/CN117374728A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5155738A (en) * | 1989-10-31 | 1992-10-13 | The Furakawa Electric Co., Ltd. | Semiconductor laser elements |
| CN101599616A (en) * | 2008-06-03 | 2009-12-09 | 株式会社理光 | Vcsel, device, optical scanning device and imaging device |
| CN103812002A (en) * | 2012-11-07 | 2014-05-21 | 无锡华御信息技术有限公司 | Semiconductor distributed feedback laser |
| CN103151702A (en) * | 2013-03-13 | 2013-06-12 | 常州工学院 | Phase shift electric control distributed feedback (DFB) semiconductor laser device and manufacturing method thereof |
| CN114284865A (en) * | 2021-12-24 | 2022-04-05 | 中国科学院半导体研究所 | Active feedback distributed feedback laser and manufacturing method thereof |
| CN115528537A (en) * | 2022-08-26 | 2022-12-27 | 江苏华兴激光科技有限公司 | Method for manufacturing GaAs-based narrow-linewidth red laser chip |
| CN116454728A (en) * | 2023-06-16 | 2023-07-18 | 上海三菲半导体有限公司 | Distributed feedback laser diode, application and preparation method |
| CN116544782A (en) * | 2023-06-16 | 2023-08-04 | 上海三菲半导体有限公司 | Distributed feedback semiconductor laser diode, application and preparation method |
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