CN117374203A

CN117374203A - Light-emitting substrate, manufacturing method thereof and display device

Info

Publication number: CN117374203A
Application number: CN202210772386.2A
Authority: CN
Inventors: 刘欢; 曾亭; 张小祥; 胡海峰; 查鑫
Original assignee: BOE Technology Group Co Ltd; Hefei BOE Ruisheng Technology Co Ltd
Current assignee: BOE Technology Group Co Ltd; Hefei BOE Ruisheng Technology Co Ltd
Priority date: 2022-06-30
Filing date: 2022-06-30
Publication date: 2024-01-09

Abstract

The present disclosure provides a light emitting substrate, a method of manufacturing the same, and a display device. The light-emitting substrate comprises a functional area and a binding area; the light-emitting substrate comprises a first conductive layer, an insulating film layer and a second conductive layer which are sequentially arranged; the thickness of the insulating film layer corresponding to the functional area is larger than that of the insulating film layer corresponding to the binding area, the second conductive layer comprises an electrode arranged in the binding area and used for binding with the flexible circuit board, and the first conductive layer is electrically connected with the electrode in the binding area.

Description

Light-emitting substrate, manufacturing method thereof and display device

Technical Field

The disclosure relates to the technical field of display, in particular to a light-emitting substrate, a manufacturing method thereof and a display device.

Background

In the related art, different wirings may be formed using the same conductive layer when manufacturing the light emitting substrate, and an insulating film layer may be formed between two adjacent conductive layers for the conductive layers of the different layers to electrically insulate the conductive layers of the different layers.

However, the inventors of the present disclosure found that, since binding with a flexible circuit board needs to be achieved in a binding region of a light emitting substrate, if an insulating film layer is set thicker, a binding effect is poor, whereas if the insulating film layer is set thinner, a short circuit of two conductive layers easily occurs in a functional region of the light emitting substrate, resulting in a defect.

Disclosure of Invention

The embodiment of the disclosure provides a light-emitting substrate, a manufacturing method thereof and a display device, so as to solve or partially solve the above problems.

In a first aspect of the present disclosure, a light emitting substrate is provided, including a functional region and a bonding region;

the light-emitting substrate comprises a first conductive layer, an insulating film layer and a second conductive layer which are sequentially arranged; the thickness of the insulating film layer corresponding to the functional area is larger than that of the insulating film layer corresponding to the binding area, the second conductive layer comprises an electrode arranged in the binding area and used for binding with the flexible circuit board, and the first conductive layer is electrically connected with the electrode in the binding area.

In a second aspect of the present disclosure, there is provided a method of manufacturing a light emitting substrate including a functional region and a bonding region, the method including:

forming a first conductive layer on a substrate base plate;

forming an insulating film layer on the first conductive layer by using a half-tone mask, wherein the thickness of the insulating film layer corresponding to the functional region is larger than that of the insulating film layer corresponding to the binding region;

and forming a second conductive layer on the insulating film layer, wherein the second conductive layer comprises an electrode arranged in the binding region, the electrode is used for binding with the flexible circuit board, and the first conductive layer is electrically connected with the electrode in the binding region.

In a third aspect of the present disclosure, there is provided a display device comprising the light-emitting substrate according to the first aspect.

According to the light-emitting substrate, the manufacturing method thereof and the display device, the insulating film layer of the functional area is made thick, the insulating film layer of the binding area is made thin, and meanwhile the problems of short circuit, poor explosion of conductive adhesive particles and interlayer adhesive force of the binding area are solved.

Drawings

In order to more clearly illustrate the technical solutions of the present disclosure or related art, the drawings required for the embodiments or related art description will be briefly described below, and it is apparent that the drawings in the following description are only embodiments of the present disclosure, and other drawings may be obtained according to these drawings without inventive effort to those of ordinary skill in the art.

Fig. 1A shows a schematic structural diagram of an exemplary light emitting substrate.

Fig. 1B is a partial enlarged view of the M region in fig. 1A.

Fig. 1C is a partial cross-sectional view of the light-emitting substrate shown in fig. 1A.

Fig. 2A shows a schematic structural diagram of an exemplary light emitting substrate.

Fig. 2B shows a schematic structural view of another exemplary light emitting substrate.

Fig. 3A shows a schematic view of an exemplary light emitting substrate provided by an embodiment of the present disclosure.

Fig. 3B illustrates a schematic diagram of an orthographic projection relationship of a first conductive layer and a second conductive layer at a bonding region according to an embodiment of the present disclosure.

Fig. 4 shows a flow diagram of an exemplary manufacturing method provided by an embodiment of the present disclosure.

Fig. 5A shows an exemplary semi-finished schematic of a light emitting substrate according to an embodiment of the present disclosure.

Fig. 5B shows another exemplary semi-finished schematic of a light emitting substrate according to an embodiment of the present disclosure.

Fig. 5C shows another exemplary semi-finished schematic of a light emitting substrate according to an embodiment of the present disclosure.

Fig. 5D shows another exemplary semi-finished schematic of a light emitting substrate according to an embodiment of the present disclosure.

Fig. 5E shows another exemplary semi-finished schematic of a light emitting substrate according to an embodiment of the present disclosure.

Fig. 5F shows another exemplary semi-finished schematic of a light emitting substrate according to an embodiment of the present disclosure.

Fig. 5G illustrates another exemplary semi-finished schematic of a light emitting substrate according to an embodiment of the present disclosure.

Detailed Description

For the purposes of promoting an understanding of the principles and advantages of the disclosure, reference will now be made to the embodiments illustrated in the drawings and specific language will be used to describe the same.

It should be noted that unless otherwise defined, technical or scientific terms used in the embodiments of the present disclosure should be given the ordinary meaning as understood by one of ordinary skill in the art to which the present disclosure pertains. The terms "first," "second," and the like, as used in embodiments of the present disclosure, do not denote any order, quantity, or importance, but rather are used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that elements or items preceding the word are included in the element or item listed after the word and equivalents thereof, but does not exclude other elements or items. The terms "connected" or "connected," and the like, are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", etc. are used merely to indicate relative positional relationships, which may also be changed when the absolute position of the object to be described is changed.

With the continuous development of display technology, display technologies of various principles are currently presented. One type of display device is a liquid crystal display device.

Since the liquid crystal display device belongs to a passive display device, a backlight module is generally required to provide a backlight source. In order to realize dynamic adjustment of a backlight source, an implementation mode of the direct type backlight module adopts a light-emitting substrate formed by light-emitting elements arranged in an array to provide the backlight source. The light emitting element may be a Light Emitting Diode (LED), a sub-millimeter light emitting diode (MiniLED) or a micro light emitting diode (micro LED). Among them, the MiniLED technology has been receiving more attention in recent years due to the advantages of ultra-high brightness, contrast, ultra-wide color gamut, resolution, refresh rate, and the like.

When manufacturing the light-emitting substrate, the use of a double conductive layer (e.g., two metal layers) may have more sections than the use of a single conductive layer to form the traces, may allow for more detailed control, and may be an ideal choice for high-end display products.

Fig. 1A to 1C illustrate schematic structural views of an exemplary light emitting substrate. Fig. 1B is a partial enlarged view of the M region in fig. 1A, showing the structure of one light emitting element. Fig. 1C is a partial cross-sectional view of the light-emitting substrate shown in fig. 1A.

The light emitting element may include four light emitting diodes 6101 connected in series, with the light emitting diode electrically connected to the driving voltage line VLED as a start point of the series connection of the four light emitting diodes 6101, and the light emitting diode 6101 electrically connected to the driving chip 6102 as an end point of the series connection of the four light emitting diodes. The four leds are driven by one driving chip 6102.

It should be noted that, in the embodiment of the present disclosure, the number of light emitting diodes in each light emitting element is not limited, and may be any number of five, six, seven, eight, and the like, and is not limited to four.

In embodiments of the present disclosure, as shown in fig. 1B and 1C, the light emitting substrate may include a substrate 914, a first conductive layer 906, and a second conductive layer 908. The second conductive layer 908 is disposed on one side of the substrate 914 and includes a second conductive portion. The first conductive layer 906 is disposed between the second conductive layer 908 and the substrate 914, and includes a first conductive portion 20, where the second conductive portion 20 includes a hollowed portion 111, and the front projection of the light emitting diode 6101 and the driving chip 6102 on the substrate 914 falls in the front projection of the hollowed portion 111 on the substrate 914. An insulating layer, for example, a first insulating layer 300 and an insulating film layer 910 may be disposed between the second conductive layer 908 and the first conductive layer 906, where the insulating film layer 910 is located on a side of the first insulating layer 300 facing the substrate 914, and the first conductive layer 906 is located between the insulating film layer 910 and the substrate 914; an insulating film layer 912 is provided over the second conductive layer 908.

In some embodiments, the insulating film layer 910 includes an organic insulating layer 9104. The greater thickness of the organic insulating layer 9104 can result in a greater thickness of the insulating layer between the second conductive layer 908 and the first conductive layer 906, avoiding shorting of the second conductive layer 908 with the first conductive layer 906. The sum of the thicknesses of the organic insulating layer 9104 and the first insulating layer 300 may be about 7 μm.

In some embodiments, the insulating film 910 further includes a first inorganic insulating layer 9102 on a side of the organic insulating layer 9104 facing the substrate 914. The surface roughness of the first inorganic insulating layer 9102 is high, and the adhesion between the first inorganic insulating layer 9102 and the first conductive layer 906 is high, so that the first conductive layer 906 and the insulating film layer 910 are prevented from being separated. The material of the first inorganic insulating layer 9102 may include at least one of silicon nitride and silicon oxide.

In some embodiments, the thickness of the first inorganic insulating layer 9102 is less than the thickness of the organic insulating layer 9104.

In some embodiments, the first conductive layer 906 is generally used to arrange various signal lines, i.e., the first conductive part 20 may be various signal lines, such as the common voltage line GND, the driving voltage line VLED, the source power supply line PWR, the address line DI, and the like. Optionally, the first conductive layer 906 has a thickness in the range of about 1.5 μm to about 7 μm, and the material includes copper. For example, the first conductive layer 906 may be formed by sputtering a laminate material such as Monb/Cu/Monb, an underlayerFor improving adhesion, interlayer Cu for transmitting electrical signals, top layer +.>Is used for preventing oxidation. The film layer can also be formed in an electroplating mode, a seed layer MoNiTi is formed first to improve the nucleation density of crystal grains, and an oxidation-resistant layer MoNiTi is manufactured after electroplating.

The second conductive layer 908 may include pads for mounting electronic components and/or leads configured to function as signal transmission. Optionally, the second conductive layer 908 has a thickness in a range of aboutThe material can be laminated material such as MoNb/Cu/CuNi, wherein the bottom MoNb layer is used for improving the adhesion, the middle Cu layer is used for transmitting electric signals, and the top CuNi layer can be used for achieving both oxidation resistance and die bonding firmness.

In one embodiment, the second conductive portion includes a plurality of sets of pads. In this embodiment, the bonding pad may be a bonding pad for mounting a functional device, and the functional element may be a bonding pad for mounting a functional device driving chip, for example, a light emitting diode, a sensor, or the like.

Referring to fig. 1C, a set of pads for mounting a light emitting diode is exemplified, the set of pads including two pads 110, one being an anode pad and the other being a cathode pad.

In some embodiments, the set of pads for mounting the driver chip includes four pads, one for bonding with an address pad of the driver chip, one for bonding with an output pad of the driver chip, one for bonding with a power supply pad of the driver chip, and one for bonding with a common voltage pad of the driver chip.

As can be seen from fig. 1A and 1C, better wiring and electrical connection of components in the light emitting substrate can be achieved by using the double conductive layers.

However, since the conductive layer is generally made of copper, copper is susceptible to oxidation corrosion, and particularly, when defects such as impurity particles (particles) of an insulating film layer between two conductive layers are encountered, copper grows at the position where the impurities are located, resulting in short circuit (e.g., DGS failure) between the two conductive layers.

Fig. 2A shows a schematic structural diagram of an exemplary light-emitting substrate 800.

As shown in fig. 2A, the light emitting substrate 800 may include a functional region 802 (only a portion of the functional region is shown in the drawing) and a bonding region 804, and may include a first conductive layer 806, an insulating film layer 810, and a second conductive layer 808 that are stacked. To avoid shorting of the first conductive layer 806 and the second conductive layer 808 in the functional region 802, the insulating film layer 810 between the first conductive layer 806 and the second conductive layer 808 may be set thicker, for example, greater than 3.5 μm. Bonding (Bonding) is performed on the flexible circuit board by using a pad formed on the second conductive layer 808 (in fig. 2A, where the second conductive layer 808 is located) in the Bonding area 804, and electrical connection of the Bonding area is performed by using conductive adhesive (e.g., ACF) during Bonding.

However, for ACF particles of small particle size (e.g., particle size 5 μm or less), the press fit amount of good blasting is required to be 50% or more, i.e., ACF particles of particle size 5 μm are press-fitted to at least 2.5 μm to achieve good conductive performance. The binding offset D (Bonding Gap) needs to be less than or equal to 2.5 μm. If the thickness of the insulating layer 810 of the binding region 804 is the same as the functional region 802, the binding break D > 2.5 μm, which does not meet the requirement of good blasting of ACF particles.

Fig. 2B shows a schematic structural diagram of another exemplary light-emitting substrate 800.

As shown in fig. 2B, in the binding region 804 of the light emitting substrate 800, the organic insulating layer in the middle of the insulating film layer is removed, and only the inorganic insulating layers on both sides of the organic insulating layer remain. Because the inorganic insulating layer is thin, there is little binding break in the binding region 804, so that the binding effect can be well achieved.

However, since only the inorganic insulating layer remains between the two conductive layers 806 and 808 without buffering by the organic insulating layer, adhesion between layers is poor, and Peeling (Peeling) is liable to occur.

Fig. 3A shows a schematic diagram of an exemplary light emitting substrate 900 provided by an embodiment of the present disclosure.

As shown in fig. 3A, the light emitting substrate 900 may include a functional region 902 and a bonding region 904. Wherein for simplicity of illustration, the functional area 902 is shown only in part. In some embodiments, the functional region 902 may correspond to a region of the light-emitting substrate 900 where a light-emitting element (e.g., the light-emitting element 6101 of fig. 1B) is disposed. As an alternative embodiment, the light emitting element may be a light emitting diode. In some embodiments, the light emitting element may be a light emitting diode having a size on the order of hundred microns and less. For example, the light emitting diode may be a sub-millimeter light emitting diode (MiniLED) or a micro light emitting diode (micro led). Wherein the size of the MiniLED ranges from about 100 μm to 300 μm, and the size of the MicroLED is smaller than 100 μm.

In some embodiments, the light emitting substrate 900 may be a display substrate, and may display color images. In other embodiments, the light-emitting substrate 900 may be a backlight source in a backlight module of a liquid crystal display panel for providing backlight.

As shown in fig. 3A, the light emitting substrate 900 may include a first conductive layer 906, an insulating film layer 910, and a second conductive layer 908, which are sequentially disposed.

In some embodiments, the first conductive layer 906 may be used to arrange various signal lines, for example, a common voltage line GND, a driving voltage line VLED, a source power supply line PWR, an address line DI, and the like. Alternatively, the first conductive layer 906 may have a thickness ranging from about 1.5 μm to about 7 μm, and may include copper. For example, the first conductive layer 906 may be formed by sputtering a laminate material such as Monb/Cu/Monb, wherein the underlayerFor improving adhesion, interlayer Cu for transmitting electrical signals, top layer +.>Is used for preventing oxidation. The film layer can also be formed in an electroplating mode, a seed layer MoNiTi is formed first to improve the nucleation density of crystal grains, and an oxidation-resistant layer MoNiTi is manufactured after electroplating.

In some embodiments, the second conductive layer 908 may include pads for mounting electronic components and/or be configured to functionThe signal transmission leads. Optionally, the second conductive layer 908 has a thickness in a range of aboutThe material can be laminated material such as MoNb/Cu/CuNi, wherein the bottom MoNb layer is used for improving the adhesion, the middle Cu layer is used for transmitting electric signals, and the top CuNi layer can be used for achieving both oxidation resistance and die bonding firmness.

In some embodiments, the second conductive layer 908 can include an electrode (e.g., a pad).

Fig. 3B illustrates a schematic diagram of an orthographic relationship of the first conductive layer 906 and the second conductive layer 908 at the bonding region 904 according to an embodiment of the present disclosure.

As shown in fig. 3B, the first conductive layer 906 may include a driving voltage line VLED and a source power line PWR, and the second conductive layer 908 may include a set of bonding electrodes, e.g., electrodes 9082, 9084, 9086, which are equally spaced along the first direction x.

This set of electrodes may be used for binding with a flexible circuit board (not shown). As shown in fig. 3A and 3B, the driving voltage line VLED and the source power line PWR of the first conductive layer 906 may be electrically connected to the electrodes 9082 and 9084 of the second conductive layer 908, respectively, in the bonding region 904, so that various signals provided from an external circuit may be transferred to corresponding signal lines in the light emitting substrate 900 through the flexible circuit board to accomplish control of the light emitting substrate 900. As an alternative embodiment, to ensure the binding effect, the plurality of electrodes in the second conductive layer 908 may be arranged at equal intervals, as shown in fig. 3B. Also, the number of electrodes correspondingly connected to the respective signal lines may be different for the difference in width of the signal lines in the first conductive layer 906. For example, since the driving voltage line VLED supplies a constant voltage signal, in order to avoid the generation of a voltage drop, the line width is generally large, and accordingly, as shown in fig. 3B, the number of the electrodes 9082 for connecting the driving voltage line VLED may be large (the actual number is set according to actual needs, the number in the figure is only schematic), thereby ensuring stability of signal transfer. As another example, as shown in fig. 3B, the source power supply line PWR has a relatively narrow width, and an electrical connection can be achieved by using one electrode 9084. In some embodiments, since the plurality of electrodes may be arranged at equal intervals, according to different wiring designs of the signal lines, as shown in fig. 3B, there may be an electrode 9086 in the second conductive layer 908, which does not need to be connected to the signal line, and may also be referred to as a Dummy electrode (Dummy).

To ensure electrical insulation between the first and second conductive layers 906 and 908 in the functional region 902, while ensuring the binding effect of the electrodes 9082 and 9084 in the binding region 904 with the flexible circuit board. As shown in fig. 3A, a thickness T1 of the insulating film 910 corresponding to the functional region 902 is greater than a thickness T2 of the insulating film 910 corresponding to the bonding region 904.

In some embodiments, as shown in fig. 3A, the insulating film layer 910 may include openings disposed in the bonding region 904 through which electrodes (e.g., electrodes 9082-9086 of fig. 3B) may be electrically connected to the first conductive layer 906. In this way, when the flexible circuit board is bound to the electrodes, signals can be transferred through the electrodes into the corresponding signal lines.

Because the thickness T2 of the insulating film 910 corresponding to the binding region 904 is smaller than the thickness T1 of the insulating film 910 corresponding to the functional region 902, the depth D1 of the opening can be smaller, and accordingly, the interlayer difference at the position is smaller, thereby being beneficial to blasting of small-particle-size ACF particles during binding and ensuring the binding effect.

In some embodiments, the depth of the opening is less than or equal to 2.5 μm, thereby ensuring that the Bonding site interlayer difference (Bonding Gap) is 2.5 μm or less, facilitating blasting of small particle size (e.g., 5 μm) ACF particles during Bonding.

To ensure such an effect, in some embodiments, the thickness T1 of the insulating film layer 910 corresponding to the functional region 902 is greater than or equal to 3.5 μm, and the thickness of the insulating film layer 910 corresponding to the bonding region 904 is less than or equal to 2.5 μm.

In some embodiments, as shown in fig. 3A, the insulating film layer 910 may further include a first inorganic insulating layer 9102, an organic insulating layer 9104, and a second inorganic insulating layer 9106 that are stacked. Wherein the organic insulating layer 9104 is made of an organic material (e.g., resin) so as to be thicker, and an electrical insulating effect between the first conductive layer 906 and the second conductive layer 908 in the functional region 902 is ensured. In addition, an organic insulating layer is arranged between the two inorganic insulating layers, interlayer adhesion can be ensured in the binding region 904, and the problem of Peeling of the binding region 904 is solved.

In some embodiments, the thickness of the organic insulating layer 9104 corresponds to the functional region 902 is greater than or equal to 2.5 μm (e.g., 2.5 μm to 10 μm), and the thickness of the organic insulating layer 9104 corresponds to the bonding region 904 is less than or equal to 2.5 μm (e.g., 1.5 μm to 2.5 μm), thereby better ensuring electrical insulation between the first conductive layer 906 and the second conductive layer 908 in the functional region 902, while ensuring the bonding effect of the electrodes 9082 and 9084 to the flexible circuit board in the bonding region 904. Alternatively, the thickness of the first inorganic insulating layer 9102 and the second inorganic insulating layer 9106 may be in a range of

As an alternative embodiment, as shown in fig. 3A, an insulating film layer 912 may be further provided as the insulating film layer 910. The insulating film layer 912 may further include an inorganic insulating layer 9122 and an organic insulating layer 9124.

In some embodiments, an insulating film layer 912 may also be formed in the bonding region 904 and may cover the outer edges of the electrodes (e.g., electrodes 9082 to 9086) in the bonding region so that only a partial region (e.g., a non-edge region) of the electrodes is exposed, the edges of the electrodes will be protected while securing the bonding effect, thereby preventing a short circuit between adjacent electrodes and preventing water oxygen or static electricity from entering the light emitting substrate 900 from the side of the electrodes. In this embodiment, since the outer edge of the electrode needs to be covered with the insulating film layer 912, the sum of the thicknesses of the insulating film layer 912 and the insulating film layer 910 in the bonding region 904 is less than or equal to 2.5 μm in order to secure the bonding effect. Alternatively, the thickness of the organic insulating layer 9124 corresponding to the functional region 902 may be in the range of 2.5 μm to 10 μm, and the thickness of the inorganic insulating layer 9122 may be in the range of

In some embodiments, as shown in FIG. 3B, the light is emittedThe substrate 900 may also include other film structures, such as a substrate 914 and a buffer layer 916. Alternatively, the thickness of the buffer layer 916 may be in the range of

According to the light-emitting substrate provided by the embodiment of the disclosure, the insulating film layer is arranged at the functional area and the binding area, so that the problems of short circuit, poor explosion of conductive adhesive particles and interlayer adhesive force of the binding area are solved.

The embodiment of the disclosure also provides a manufacturing method of the light-emitting substrate. Fig. 4 illustrates a flow diagram of an exemplary manufacturing method 1000 provided by an embodiment of the present disclosure.

As shown in fig. 4, the method 1000 may be used to fabricate any of the embodiments or arrangements, combinations of embodiments of the light emitting substrate described above, and may further include the following steps.

At step 1010, a first conductive layer 906 may be formed on a substrate base 914.

As an alternative embodiment, as shown in fig. 5A, a substrate 914 may be provided, then a buffer layer 916 is formed on the substrate 914, and then a first conductive layer 906 is formed on the buffer layer 916. The buffer layer 914 may provide a counter stress that improves the stress resistance of the substrate 914. Alternatively, the substrate 914 may be a Glass substrate, a PCB substrate, an aluminum plate, an organic Film (Film), or the like. Alternatively, the first conductive layer 906 may be patterned in the conductive film through a one-time patterning process.

At step 1020, an insulating film layer 910 may be formed on the first conductive layer 906.

As an alternative embodiment, the insulating film layer 910 may be formed on the first conductive layer 906 using the halftone mask 1100. Since the Half-tone Mask 1100 has the full-transparent region, the semi-transparent region and the opaque region, the exposure of the portion of the insulating film layer corresponding to the functional region and the exposure of the portion of the insulating film layer corresponding to the bonding region can be different in one patterning process, so that the thickness of the insulating film layer corresponding to the functional region is greater than the thickness of the insulating film layer corresponding to the bonding region.

Specifically, as shown in fig. 5B, an inorganic insulating material layer 9102a and an organic insulating material layer 9104a may be coated on the first conductive layer 906, and then the organic insulating layer 9104 may be patterned by a one-time patterning process using a half-tone mask 1100, as shown in fig. 5C and 5D.

Note that, when the material of the organic insulating material layer 9104a is negative photoresist and positive photoresist, respectively, the exposure condition of the halftone mask 1100 is different, and fig. 5C shows an example of negative photoresist. In the positive photoresist example, the exposure of the various areas of the halftone mask 1100 are reversed. But eventually the slope angle at the step position of the organic insulating layer 9104 is the same. For example, in the range of 30 deg. to 60 deg..

The deposition of the inorganic insulating material layer may then continue, followed by a patterning process again, to form a final insulating film layer 910, as shown in fig. 5E.

In step 1030, a second conductive layer 908 may be formed on the insulating film layer 910. The second conductive layer 908 includes electrodes (e.g., electrodes 9082-9086 of fig. 3B) disposed in the bonding region 904 for bonding with the flexible circuit board, and the first conductive layer 906 is electrically connected with the electrodes in the bonding region 904. Alternatively, the second conductive layer 908 is formed by depositing a conductive film and then using a patterning process, as shown in fig. 5F.

In some embodiments, forming an insulating film layer on the first conductive layer using a halftone mask may further include: and forming an opening at a position of the insulating film layer corresponding to the binding region by using the halftone mask, as shown in fig. 5E. Forming a second conductive layer on the insulating film layer may further include: the electrode is formed at the opening to electrically connect the electrode with the first conductive layer, as shown in fig. 5F.

In some embodiments, the depth of the openings is less than or equal to 2.5 μm, so that the binding effect can be ensured.

In some embodiments, the inorganic insulating layer 9122 may also be formed by continuing to deposit a thin film of inorganic material and then performing a patterning process once, as shown in fig. 5F.

In other embodiments, the insulating film layer 912 may be formed by performing a patterning process after sequentially depositing the inorganic material thin film and the organic material thin film, as shown in fig. 5G.

In summary, in the preferred embodiment, the light-emitting substrate with different insulating film thicknesses in the functional area and the binding area is manufactured through 5 patterning processes. The lamination structure of the light-emitting substrate has the binding adhesive force reaching 4B through actual measurement, the binding process has no defects such as uneven ACF particle indentation, the reliability 8585 reaches 1000 hours, and the defects such as DGS and the like, and the expected effect is achieved.

According to the manufacturing method of the light-emitting substrate, the Half-tone Mask technology is adopted in the manufacturing process, the functional area is provided with the thicker insulating film layer and the binding area is provided with the thinner insulating film layer at the same time in one patterning process, DGS, ACF explosion defects and Bonding area adhesive force can be solved at the same time, meanwhile, one Mask is saved, and product cost is reduced.

According to the light-emitting substrate and the manufacturing method thereof, the Half-Tone Mask is adopted, so that the insulating layer has different film thicknesses in the functional area (AA area) and the binding area (binding area), and the structure not only has higher DGS resistance and stronger binding pad adhesive force, but also has smaller binding Gap, and is beneficial to blasting of small-particle-size ACF ions in the binding process.

The embodiment of the disclosure further provides a display device, which may include the foregoing light-emitting substrate embodiment and may have corresponding technical effects, which are not described herein again.

In some embodiments, the display device may further include a driving circuit coupled with the light emitting substrate, the driving circuit configured to provide an electrical signal to the light emitting substrate.

It is understood that the display device is a product with an image display function, for example, may be: displays, televisions, billboards, digital photo frames, laser printers with display functions, telephones, mobile phones, personal digital assistants (PersonalDigitalAssistant, PDA), digital cameras, portable video cameras, viewfinders, navigators, vehicles, large-area walls, household appliances, information query devices (such as business query devices of e-government departments, banks, hospitals, electric power departments, etc., monitors, etc.).

Those of ordinary skill in the art will appreciate that: the discussion of any of the embodiments above is merely exemplary and is not intended to suggest that the scope of the disclosure, including the claims, is limited to these examples; the technical features of the above embodiments or in the different embodiments may also be combined under the idea of the present disclosure, the steps may be implemented in any order, and there are many other variations of the different aspects of the embodiments of the present disclosure as described above, which are not provided in details for the sake of brevity.

Additionally, well-known power/ground connections to Integrated Circuit (IC) chips and other components may or may not be shown within the provided figures, in order to simplify the illustration and discussion, and so as not to obscure the embodiments of the present disclosure. Furthermore, the devices may be shown in block diagram form in order to avoid obscuring the embodiments of the present disclosure, and this also accounts for the fact that specifics with respect to implementation of such block diagram devices are highly dependent upon the platform on which the embodiments of the present disclosure are to be implemented (i.e., such specifics should be well within purview of one skilled in the art). Where specific details (e.g., circuits) are set forth in order to describe example embodiments of the disclosure, it should be apparent to one skilled in the art that embodiments of the disclosure can be practiced without, or with variation of, these specific details. Accordingly, the description is to be regarded as illustrative in nature and not as restrictive.

While the present disclosure has been described in conjunction with specific embodiments thereof, many alternatives, modifications, and variations of those embodiments will be apparent to those skilled in the art in light of the foregoing description. The disclosed embodiments are intended to embrace all such alternatives, modifications and variances which fall within the broad scope of the appended claims. Accordingly, any omissions, modifications, equivalents, improvements, and the like, which are within the spirit and principles of the embodiments of the disclosure, are intended to be included within the scope of the disclosure.

Claims

1. A luminous substrate comprises a functional area and a binding area;

2. The light emitting substrate of claim 1, wherein the insulating film layer includes an opening provided at the bonding region, the electrode being electrically connected to the first conductive layer through the opening.

3. The light-emitting substrate according to claim 1 or 2, wherein the depth of the opening is less than or equal to 2.5 μm.

4. The light-emitting substrate according to claim 1, wherein a thickness of the insulating film layer corresponding to the functional region is greater than or equal to 3.5 μm, and a thickness of the insulating film layer corresponding to the bonding region is less than or equal to 2.5 μm.

5. The light-emitting substrate according to claim 4, wherein the insulating film layer comprises a first inorganic insulating layer, an organic insulating layer, and a second inorganic insulating layer which are stacked.

6. The light-emitting substrate according to claim 4 or 5, wherein a thickness of the organic insulating layer corresponding to the functional region is greater than or equal to 3.5 μm, and a thickness of the organic insulating layer corresponding to the bonding region is less than or equal to 2.5 μm.

7. The light-emitting substrate of claim 1, further comprising a plurality of light-emitting elements disposed in the functional region, the plurality of light-emitting elements comprising at least one of a light-emitting diode, a sub-millimeter light-emitting diode, and a micro light-emitting diode.

8. The light emitting substrate of claim 7, wherein the first conductive layer comprises at least one of a driving voltage line, a common voltage line, a source power line, and an address line of the light emitting element.

9. A method of manufacturing a light emitting substrate including a functional region and a bonding region, the method comprising:

forming a first conductive layer on a substrate base plate;

10. The method of claim 9, wherein forming an insulating film layer on the first conductive layer using a halftone mask comprises: forming an opening at the position of the insulating film layer corresponding to the binding region by using a halftone mask;

forming a second conductive layer on the insulating film layer, including: the electrode is formed at the opening to electrically connect the electrode with the first conductive layer.

11. The method of claim 9, wherein the depth of the opening is less than or equal to 2.5 μm.

12. A display device comprising the light-emitting substrate according to any one of claims 1 to 8.