CN117371547A - Ion trap chip parameter determining method and device, electronic equipment and medium - Google Patents

Ion trap chip parameter determining method and device, electronic equipment and medium Download PDF

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CN117371547A
CN117371547A CN202311443801.0A CN202311443801A CN117371547A CN 117371547 A CN117371547 A CN 117371547A CN 202311443801 A CN202311443801 A CN 202311443801A CN 117371547 A CN117371547 A CN 117371547A
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汪景波
黄晨
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Beijing Baidu Netcom Science and Technology Co Ltd
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Abstract

The present disclosure provides a method, apparatus, electronic device, computer readable storage medium and computer program product for determining parameters of an ion trap chip, and relates to the field of quantum computers, in particular to the technical field of ion trap chips. The implementation scheme is as follows: determining the position of a first ion to be calibrated in an ion trap chip; acquiring and determining an initial frequency difference between two laser beams split by a beam splitter; determining an equivalent amplitude of the laser after the laser irradiates the first ion; adjusting the frequency difference between the two laser beams and determining the corresponding laser pulse duration; for each combination of the frequency difference and the laser pulse duration, determining a first probability that the first ion is in an excited state at that combinationThe method comprises the steps of carrying out a first treatment on the surface of the The phonon frequency is determined based on a variation of the first probability with the frequency difference in the combination. Based on the formulaDetermining laser pulse duration τ opt N is an odd number, Ω is an equivalent amplitude, and Δ is a frequency difference.

Description

Ion trap chip parameter determining method and device, electronic equipment and medium
Technical Field
The present disclosure relates to the field of quantum computers, and in particular to the field of ion trap chip technology, and in particular to an ion trap chip parameter determination method, an apparatus, an electronic device, a computer readable storage medium, and a computer program product.
Background
The ion trap quantum calculation is a calculation method based on quantum mechanics, and the principle is that ions are used for processing information as quantum bits by utilizing stable movement of the ions in an electric field, and quantum gate operation can be realized through accurate regulation and control of laser and a microwave field, so that quantum calculation is performed. This approach is currently considered one of the promising approaches to quantum computing.
The basic process of ion trap quantum computation is to cool ions by laser, form a binding potential in space by direct current and alternating electric field, make the ions stand still at a point in three-dimensional space, and then realize quantum entanglement and operation between the ions by adjusting the laser. Since each ion can be abstracted as one qubit, many important tasks in quantum computing, such as quantum random walk, quantum simulation, and quantum search, can be achieved by manipulating them. The ion trap quantum calculation has high controllability, can realize high-efficiency quantum algorithm, and has wide application prospect. Meanwhile, the requirement of ion trap quantum calculation on the experimental technology is very high, the position, energy level and interaction of ions need to be precisely controlled, and high-precision measurement and control of the ions are also needed.
Disclosure of Invention
The present disclosure provides an ion trap chip parameter determination method, apparatus, electronic device, computer readable storage medium and computer program product.
According to an aspect of the present disclosure, there is provided an ion trap chip parameter calibration method, including: determining the position of a first ion to be calibrated in the ion trap chip; acquiring and determining an initial frequency difference between two laser beams split by a beam splitter; irradiating the first ion by a laser, determining that the laser is irradiated to the first ionEquivalent amplitude after an ion; adjusting the frequency difference between the two laser beams, and determining the laser pulse duration corresponding to the current frequency difference, wherein the laser pulse duration is based on a formula Determining the laser pulse duration τ opt Wherein n is an odd number, Ω is the equivalent amplitude, and Δ is the frequency difference; for each combination of the frequency difference and the laser pulse duration, determining a first probability that the first ion is in an excited state at that combination; a phonon frequency is determined based on a variation of the first probability with the frequency difference in the combination.
According to another aspect of the present disclosure, there is provided an ion trap chip parameter calibration apparatus, including: a first determining unit configured to determine a position of a first ion to be calibrated in the ion trap chip; an acquisition unit configured to acquire and determine an initial frequency difference between two laser beams divided by a beam splitter; a second determining unit configured to determine an equivalent amplitude of the laser light after irradiating the first ion by irradiating the first ion with the laser light; a first adjusting unit configured to adjust a frequency difference between the two lasers and determine a laser pulse duration corresponding to the current frequency difference, wherein the first adjusting unit is based on a formula Determining the laser pulse duration τ opt Wherein n is an odd number, Ω is the equivalent amplitude, and Δ is the frequency difference; a third determination unit configured to determine, for each combination of the frequency difference and the laser pulse duration, a first probability that the first ion is in an excited state at that combination; and a fourth determining unit configured to determine a phonon frequency based on a variation of the first probability with the frequency difference in the combination.
According to another aspect of the present disclosure, there is provided an electronic device including: at least one processor; and a memory communicatively coupled to the at least one processor; the memory stores instructions executable by the at least one processor to enable the at least one processor to perform the methods described in the present disclosure.
According to another aspect of the present disclosure, there is provided a non-transitory computer-readable storage medium storing computer instructions for causing a computer to perform the method described in the present disclosure.
According to another aspect of the present disclosure, there is provided a computer program product comprising a computer program which, when executed by a processor, implements the method described in the present disclosure.
According to one or more embodiments of the present disclosure, a dynamic time modulation manner is adopted, that is, different laser pulse durations are selected according to different frequency differences, so that the probability of blue sideband transition of the ion trap is improved while the noise floor is kept at a lower level in the calibration process. The signal to noise ratio of the measurement signal in the ion calibration process is obviously improved, so that the accuracy of data processing is higher, and the efficiency and the accuracy of the calibration process are improved.
It should be understood that the description in this section is not intended to identify key or critical features of the embodiments of the disclosure, nor is it intended to be used to limit the scope of the disclosure. Other features of the present disclosure will become apparent from the following specification.
Drawings
The accompanying drawings illustrate exemplary embodiments and, together with the description, serve to explain exemplary implementations of the embodiments. The illustrated embodiments are for exemplary purposes only and do not limit the scope of the claims. Throughout the drawings, identical reference numerals designate similar, but not necessarily identical, elements.
Fig. 1 shows a flow chart of an ion trap chip parameter determination method according to an embodiment of the present disclosure;
FIG. 2 illustrates a schematic diagram of ion location determination by scanning laser and fluorescence imaging in accordance with an embodiment of the present disclosure;
FIG. 3 shows a plot of the number of layouts versus the laser frequency difference delta obtained from conducting a sweep experiment at a fixed pulse time in accordance with an embodiment of the present disclosure;
FIG. 4 shows a plot of the number of layouts versus the laser frequency difference delta obtained from conducting a sweep experiment at dynamic pulse time in accordance with an embodiment of the present disclosure;
FIG. 5 illustrates a schematic diagram of determining coupling strength based on fine sweep of phonon frequencies in accordance with an embodiment of the present disclosure;
fig. 6 shows a block diagram of a configuration of an ion trap chip parameter-determining apparatus according to an embodiment of the present disclosure; and
fig. 7 illustrates a block diagram of an exemplary electronic device that can be used to implement embodiments of the present disclosure.
Detailed Description
Exemplary embodiments of the present disclosure are described below in conjunction with the accompanying drawings, which include various details of the embodiments of the present disclosure to facilitate understanding, and should be considered as merely exemplary. Accordingly, one of ordinary skill in the art will recognize that various changes and modifications of the embodiments described herein can be made without departing from the scope of the present disclosure. Also, descriptions of well-known functions and constructions are omitted in the following description for clarity and conciseness.
In the present disclosure, the use of the terms "first," "second," and the like to describe various elements is not intended to limit the positional relationship, timing relationship, or importance relationship of the elements, unless otherwise indicated, and such terms are merely used to distinguish one element from another. In some examples, a first element and a second element may refer to the same instance of the element, and in some cases, they may also refer to different instances based on the description of the context.
The terminology used in the description of the various illustrated examples in this disclosure is for the purpose of describing particular examples only and is not intended to be limiting. Unless the context clearly indicates otherwise, the elements may be one or more if the number of the elements is not specifically limited. Furthermore, the term "and/or" as used in this disclosure encompasses any and all possible combinations of the listed items.
Embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings.
To date, various types of computers in use are based on classical physics as the theoretical basis for information processing, known as traditional or classical computers. Classical information systems store data or programs using binary data bits that are physically easiest to implement, each binary data bit being represented by a 0 or a 1, called a bit or a bit, as the smallest unit of information. Classical computers themselves have the inevitable weakness: first, the most basic limitation of energy consumption in the calculation process. The minimum energy required by the logic element or the memory cell should be more than several times of kT to avoid malfunction under thermal expansion; secondly, information entropy and heating energy consumption; thirdly, when the wiring density of the computer chip is large, the uncertainty of momentum is large when the uncertainty of the electronic position is small according to the uncertainty relation of the Hessenberg. Electrons are no longer bound and there is a quantum interference effect that can even destroy the performance of the chip.
Quantum computers (QWs) are a class of physical devices that perform high-speed mathematical and logical operations, store and process quantum information, following quantum mechanical properties, laws. When a device processes and calculates quantum information and a quantum algorithm is operated, the device is a quantum computer. Quantum computers follow unique quantum dynamics (particularly quantum interferometry) to achieve a new model of information processing. For parallel processing of computational problems, quantum computers have an absolute advantage in speed over classical computers. The transformation implemented by the quantum computer on each superposition component is equivalent to a classical computation, all of which are completed simultaneously and are superimposed according to a certain probability amplitude to give the output result of the quantum computer, and the computation is called quantum parallel computation. Quantum parallel processing greatly improves the efficiency of quantum computers so that they can perform tasks that classical computers cannot do, such as factorization of a large natural number. Quantum coherence is essentially exploited in all quantum ultrafast algorithms. Therefore, quantum parallel computation with quantum state instead of classical state can reach incomparable operation speed and information processing function of classical computer, and save a large amount of operation resources.
In order to realize high-performance ion trap quantum computation, parameter calibration of an ion trap system is important. In order to achieve high fidelity quantum operations, researchers need to precisely calibrate parameters of ion trap systems, including lasers, phonon frequencies, ion-ion interactions, and the like.
The ion trap quantum calculation is a calculation method based on quantum mechanics, and the principle is that ions are used for processing information as quantum bits by utilizing stable movement of the ions in an electric field, and quantum gate operation can be realized through accurate regulation and control of laser and a microwave field, so that quantum calculation is performed. This approach is currently considered one of the promising approaches to quantum computing.
Thus, many important tasks in quantum computing, such as quantum random walk, quantum simulation, and quantum search, can be achieved through manipulation of ions. The ion trap quantum calculation has high controllability, can realize high-efficiency quantum algorithm, and has wide application prospect. Meanwhile, the requirement of ion trap quantum calculation on the experimental technology is very high, the position, energy level and interaction of ions need to be precisely controlled, and high-precision measurement and control of the ions are also needed.
The basic process of ion trap quantum computation is to cool ions by laser, form a binding potential in space by direct current and alternating electric field, make the ions stand still at a point in three-dimensional space, and then realize quantum entanglement and operation between the ions by adjusting the laser. In ion trap quantum computation, each ion in the trap represents one qubit, and two internal states |ε >, |ε > of the ion can be represented exactly as the |0>, |1> states of the qubit. If two qubits need to be entangled, it is often necessary to direct laser light onto two ions, while the two lased ions share quantized phonon modes in the ion chain in charge coulomb interactions. Such experimental systems, the equivalent hamiltonian amount of which is generally related to parameters of the ion trap system, including laser frequency, amplitude and phase, phonon frequency, coupling strength, etc. The adjustment of the equivalent hamiltonian amount is generally achieved experimentally by adjusting the amplitude and phase of the laser pulses.
Thus, in quantum operations based on the ion trap system, corresponding quantum operations can be realized based on the calibrated parameters. For example, modulating the laser pulses based on more accurate system parameters results in more accurate qubit gates by applying the laser pulses to the corresponding ions. These parameters need to be calibrated experimentally due to very fine physical effects of the system involved in ion trap quantum computation, such as oscillation frequency of ions, frequency noise, ion trap stability, etc. This is because the mechanisms and operations of ion trap quantum computation need to work with very high precision, some seemingly slight errors may actually affect the overall computing system.
Among these parameters to be calibrated, the collective vibration mode of the ion trap, phonon frequency, is of particular importance. This is because in ion trap quantum computation, accurate operation and control of ions are required for generating double-bit and multi-bit quantum gates, and after each operation of the quantum circuit is completed, cooling and resetting work is required by phonons, which are all independent of calibrating the phonon frequency.
Theoretically, the phonon frequency corresponding to the collective vibration of ions in the ion trap is limited. The confinement of phonon frequency is due to the coulomb interactions between ions and the interactions between the positions of the individual ions in steady state. These interactions cause the collective vibration of ions to form specific frequency modes that can be excited and tuned by precisely controlling the frequency and power of the laser. Thus, the value of the phonon frequency corresponding to the collective vibration of ions in the ion trap can be used to precisely control the position and momentum of the ions. Operation in ion trap quantum computing often requires precise control of interactions between ions and ion positions, and thus precise regulation of phonon frequencies in the ion trap. If the phonon frequency calibration is erroneous, interactions between ions will lead to errors and noise in the calculation, affecting the accuracy and reliability of the overall calculation. Therefore, the accurate value of phonon frequency is one of the keys to ensure high efficiency and accuracy in ion trap quantum computation.
In the ion trap experiment, the built ion trap system needs to be calibrated. A more accurate method is Ramsey interferometry. The Ramsey interferometry is a measurement method based on quantum interference, and can measure the energy difference between internal energy levels of atoms or ions by adjusting free evolution time and observing periodic changes of interference fringes. In ion trap experiments, ramsey interferometry can be used to measure the phonon frequency of ions. The specific operation method is as follows: an atom or ion is prepared from one energy level to another, then allowed to evolve freely for a period of time, and finally turned back to the prepared state. If two ions are at the same energy level, they interfere, creating interference fringes; if the two ions are at different energy levels, they do not interfere and do not produce interference fringes. By adjusting the free evolution time, a periodic variation of the interference fringes can be observed. From the period of the interference fringes, the phonon frequency of the ions can be calculated.
However, the sensitivity of Ramsey interferometry is limited by the free evolution time. Shorter free evolution times lead to reduced visibility of the interference fringes, while longer free evolution times lead to periodic variations of the interference fringes becoming less pronounced. The Ramsey interferometry requires high-precision laser and control systems and stable environmental conditions to obtain high-precision phonon frequency calibration results. Environmental noise or temperature variations may affect the experimental results. Ramsey interferometry requires multiple experiments to determine phonon frequencies, which adds complexity and time consuming to the experiment. In addition, the Ramsey interferometry requires ion traps with high quality factors and long lifetimes to ensure stability of interference fringes. This places certain demands on the preparation and tuning of the ion trap.
Thus (2)An embodiment according to the present disclosure provides a method for determining parameters of an ion trap chip. Fig. 1 shows a flowchart of an ion trap chip parameter determination method according to an embodiment of the present disclosure, as shown in fig. 1, method 100 includes: determining a position of a first ion to be calibrated in the ion trap chip (step 110); acquiring and determining an initial frequency difference between two laser beams split by a beam splitter (step 120); irradiating the first ion by a laser, determining an equivalent amplitude of the laser after irradiating the first ion (step 130); adjusting the frequency difference between the two laser beams, and determining the laser pulse duration corresponding to the current frequency difference, wherein the laser pulse duration is based on a formulaDetermining the laser pulse duration τ opt Where n is an odd number, Ω is the equivalent amplitude, Δ is the frequency difference (step 140); for each combination of the frequency difference and the laser pulse duration, determining a first probability that the first ion is in an excited state at that combination (step 150); a phonon frequency is determined based on the first probability as a function of the frequency difference in the combination (step 160).
According to the embodiment of the disclosure, a dynamic time modulation mode is adopted, namely different laser pulse durations are selected according to different frequency differences, so that the probability of blue sideband transition of the ion trap is improved while the background noise is kept at a lower level in the calibration process. The signal to noise ratio of the measurement signal in the ion calibration process is obviously improved, so that the accuracy of data processing is higher, and the efficiency and the accuracy of the calibration process are improved.
Because of the problems of complicated operation, large time consumption and the like of the Ramsey interferometry, in the embodiment according to the disclosure, the phonon frequency of ions is measured by adopting a laser sweep method. Specifically, the frequency of an excitation signal (namely, the frequency difference between two laser beams) is adjusted through a laser scanner, and the change of the fluorescence of ions is observed, so that the number of the arrangement of the ions in an excited state can be obtained.
In ion trap quantum computation, in theoretical construction of hamiltonian, a certain approximation is often used to find an appropriate hamiltonian, so as to determine a change in the number of layouts caused by phonon frequency in a sweep experiment. In some examples, its corresponding full hamiltonian is as follows:
wherein j and k are respectively ion and phonon indexes, and Ω j Is the equivalent Rabi drive frequency (i.e. equivalent amplitude),is the j ion from |g>Transfer to |e>State ascending operator->Representing a large detuning of the two lasers, i.e. the frequency difference between the two lasers, into which the lasers are split by the beam splitter, is also generally a controllable variable in sweep experiments. η (eta) j,k Is the strength of the coupling between ions and phonons, a k Annihilation operator, ω, of phonons k The frequency of phonons, which is also the object to be calibrated, h.c represents the conjugate term.
The Hamiltonian quantity is eta j,k Less often, the expansion can be expressed in the following form:
when delta j When=0, one will generally ignore the following high frequency term, and only the hamiltonian remainsAn item is called a main transition. When delta j ≈ω k At the same time, the Hamiltonian amount is approximately left only +.>The term is called the blue sideband transition.When delta j ≈-ω k At the same time, the Hamiltonian amount is approximately left only +.>The term is called the red sideband transition. The above three transitions are generally all items one presently considers.
In ion trap chips, the determination of important experimental parameters is generally not performed by scanning phonon frequencies. For example, to measure the phonon frequency and the coupling strength of phonons and ions, it is necessary to find the layout number of the quantum state in the last state |e > |n+1> in the sweep experiment, and make |e > |n+1> as large as possible, so as to improve the signal-to-noise ratio of detection. A problem is encountered here, although it can be well distinguished in analog computation whether the quantum state is in the state |e > |n+1> or in the state |e > |n >, in the actual measurement process, only whether the ion internal state is in the state |e > or in the state |g > can be detected generally by fluorescence detection, and a reasonable design is needed here, so that the layout number of the quantum system on the evolving end state |e > |n > is reduced as much as possible, and the layout number of the end state on the end state |e > |n+1> is improved.
Therefore, in the embodiment of the disclosure, a manner of dynamically adjusting pulse time is designed to improve the detection efficiency of blue sideband transition and significantly improve the signal-to-noise ratio of a measurement signal in the ion calibration process in ion trap quantum computing parameter calibration. Specifically, first, it is necessary to find an appropriate pulse time τ, ensuring that the number of layouts on the |e > |n > state is low and the number of layouts on the |e > |n+1> state is highest in one pulse time. For simplicity of description, it may be assumed that only interactions between a single ion and phonon are considered, the j, k index is omitted, and the ratio of the two layout numbers may be defined as shown in formula (1):
wherein P is e,n (Δ, τ) may be approximated as shown in equation (2):
P e,n+1 (Δ, τ) may be approximated as shown in equation (3):
in the experiment, P e,n (delta, tau) is not the number of excited states that we want, and can be defined as noise in the experiment, P e,n+1 (delta, tau) is the signal strength of the blue sideband transition to be measured. Thus, SNR (Δ, τ) can be defined as the signal-to-noise ratio, with higher values indicating stronger signals for blue sideband transitions in the spectrum and also indicating more accurate phonon frequencies determined based on sweep experiments.
For different experimental parameters, after determining the driving frequency Ω (i.e. equivalent amplitude), a suitable laser pulse duration τ needs to be selected opt So that during the calibration of the phonon frequency, the SNR (delta, tau opt Maximum is reached. To achieve this, priority is given to ensuring P e,n (Δ,τ opt ) Approaching 0, and this requires assurance:
wherein n is an odd number. Therefore, in the sweep experiment, the time τ corresponding to the different frequency difference Δ opt This leads to a non-uniformity, which makes it impossible to preset a fixed laser pulse duration in advance, to ensure that the signal-to-noise ratio remains high at all frequency differences. For this reason, in the embodiment according to the present disclosure, a dynamic sweep is implemented in which the laser pulse duration of the primary laser is dynamically adjusted based on the above formula (4) every time the frequency difference of the primary laser is set, thereby ensuring that the probability of the main transition is always kept low.
Because of the particularity of ion trap quantum computation, ions which are qubits float at a space of 10-100 μm above an ion trap chip, and the distance between every two ions is related to the total ion number, which is about 2-10 μm. The ions are generally not equidistant and have the characteristics of dense middle and sparse two sides. As a first step in ion trap quantum computation, the position of the qubit needs to be found in space to perform subsequent quantum operations.
According to some embodiments, determining the location of the first ion to be calibrated in the ion trap chip comprises: and changing the incident angle of the laser according to a second preset step length within a second preset range so as to determine the position of the first ion through fluorescence imaging.
In some examples, the plurality of ions in the ion trap may be scanned one by a scanning laser method to find their respective locations. Scanning laser methods, i.e., if there are multiple ions in the ion trap, can use the laser to scan the ions one by one. By changing the incidence position of the laser beam and monitoring the fluorescence signal, the position of the ions can be found. When the laser beam coincides with an ion, the fluorescence signal changes significantly, thereby determining the ion's position. Fig. 2 shows a schematic diagram of ion (qubit) location determination by scanning laser and fluorescence imaging according to an embodiment of the disclosure.
In particular, ion location may be calibrated by means of fluorescence imaging and scanning of the laser beam. By laser cooling the ions and exciting them to a higher energy level, the ions emit fluorescent photons and flyback back to the ground state. These fluorescent photons can be collected and detected by imaging systems such as optical microscopes and photomultiplier tubes or charge-coupled device (CCD) cameras. Since the fluorescence signal intensity is related to the degree of overlap between the ion location and the laser beam, the location of the ion can be found by processing and analyzing the collected fluorescence images.
It will be appreciated that the ions have a slight movement in their respective positions, and thus the determined positions of the ions may also be referred to as central positions, without limitation.
According to some embodiments, an initial frequency difference between two laser beams split by a beam splitter of the laser is determined based on a frequency difference between the first ion g > state and e > state.
According to some embodiments, determining an equivalent amplitude of the laser after irradiating the first ion comprises: adjusting pulse durations of the laser and determining a third probability that the first ion is in an excited state after irradiating the first ion by the laser at each pulse duration; determining the duration of the corresponding laser pulse when the third probability of the first ion in the excited state is close to 1; and determining an equivalent amplitude of the laser after irradiating the first ion based on a laser pulse duration corresponding to when the third probability is close to 1.
According to some embodiments, the equivalent amplitude Ω of the laser after irradiating the first ion is determined based on the following formula:
Ω=π/2τ
where τ is the corresponding pulse duration when the probability of the first ion being in the excited state is close to 1.
In some examples, after the position of the first ion is determined, the frequency difference of the two opposite laser beams may be modulated to be the same as the frequency difference between the states |g > and |e > in the first ion, and by continuously changing the pulse duration τ of the laser action, the change over time in the number of layouts of the first ion in the state |e > (excited state) is observed until the probability of the first ion in the state |e > approaches 1 when the laser pulse duration τ passes. In this way, the equivalent amplitude (i.e., rabi drive intensity) of the laser light after it has been irradiated to the first ion can be calibrated to be Ω=pi/2τ.
In the example of determining the phonon frequency by sweep experiments, a significant peak occurs when the frequency difference between the two laser beams split by the beam splitter approaches the phonon frequency. Thus, the frequency difference corresponding to the occurrence of the peak of the first probability can be determined as the corresponding phonon frequency.
According to some embodiments, the method according to embodiments of the present disclosure further comprises: changing the frequency difference between two laser beams divided by a beam splitter according to a first preset step length in a first preset range to determine a second probability that the first ions are in an excited state under each frequency difference, wherein the frequency difference in the first preset range is close to the phonon frequency in the preset range; performing a function fit based on the second probability as a function of the frequency difference to determine a coupling strength between the first ion and the corresponding phonon based on a fit result, wherein the function fit is performed based on the following formula:
Wherein P is e (delta, tau) is the second probability that the first ion is in an excited state, eta is the coupling strength between the first ion and the corresponding phonon, omega is the equivalent amplitude, delta is the frequency difference, omega is the phonon frequency, and tau is the laser pulse duration corresponding to the frequency difference corresponding to the phonon frequency.
In some examples, according to the determined phonon frequency, a frequency near phonon frequency ω is selected, the number of layouts in the fine sweep [ ω - δ, ω+δ ] range varies with the frequency difference between the two lasers, and the above formula (i.e., formula (3)) is used to fit the number of layouts in the excited state to the variation of the frequency difference to determine the coupling strength between the first ion and the corresponding phonon.
It will be appreciated that the magnitude of δ may be set according to specific ion trap die or experimental requirements and is not limited herein.
In some embodiments, after one ion (i.e., the first ion) is calibrated, the incident angle of the laser may be changed to address the next first ion to be calibrated, and the corresponding calibration procedure is repeated to complete the functional relationship between the equivalent amplitude of the next ion and the corresponding phonon frequency difference until all ions are calibrated.
In one exemplary embodiment according to the present disclosure, experimental numerical simulation is performed based on an ion trap system in which a single ion and a single phonon are coupled, wherein a presetThe experimental parameters of (a) are equivalent amplitude Ω=0.1 MHz, phonon frequency ω=3 MHz, ion and phonon coupling strength η=0.1. By the Rabi experiment described in the above examples, Ω≡0.998MHz can be specified. FIG. 3 illustrates a pulse at a fixed pulse time τ in accordance with an embodiment of the present disclosure opt A graph of the relationship between the number of layouts obtained by performing the sweep experiment and the laser frequency difference Δ when=npi/Ω. As shown in fig. 3, the peak of the blue sideband transition in the figure (the right peak in the figure) is small, and the signal-to-noise ratio snr=34.8. Whereas in the scheme of choosing a dynamic pulse time, the relationship between the number of layouts obtained by performing the sweep experiment and the laser frequency difference delta is shown in fig. 4, wherein the signal of the blue sideband transition can be obviously enhanced, the signal to noise ratio is improved to snr=46.9, the improvement is 34.7%, and the effect is obvious. In fig. 5, δ=0.5 MHz is selected, and can be set to [2.5MHz,3MHz according to the nominal phonon frequency]In-range pair |e>|n+1>The state (excited state in the actual measurement process) is finely swept, and the actual eta is fitted through a formula (3) real =0.101。
According to the embodiment of the disclosure, by adopting a dynamic pulse duration modulation mode, the probability of blue sideband transition of the ion trap is improved while the background noise in the calibration process is kept at a lower level, so that the signal-to-noise ratio of a measurement signal in the ion calibration process is remarkably improved, and the accuracy of data processing is higher; by adopting a dynamic pulse duration modulation mode, different pulse durations can be selected according to different frequencies, which is helpful for improving the efficiency and accuracy of the calibration process, thereby providing a beneficial reference mode for large-scale ion trap calibration and enhancing the calibration efficiency.
As shown in fig. 6, there is further provided an ion trap chip parameter calibration apparatus 600 according to an embodiment of the present disclosure, including: a first determining unit 610 configured to determine a position of a first ion to be calibrated in the ion trap chipThe method comprises the steps of carrying out a first treatment on the surface of the An acquisition unit 620 configured to acquire and determine an initial frequency difference between two laser beams divided by the beam splitter; a second determining unit 630 configured to determine an equivalent amplitude of the laser light after irradiating the first ion by irradiating the first ion with the laser light; a first adjusting unit 640 configured to adjust the frequency difference between the two laser beams and determine the laser pulse duration corresponding to the current frequency difference, wherein the laser pulse duration is based on the formula Determining the laser pulse duration τ opt Wherein n is an odd number, Ω is the equivalent amplitude, and Δ is the frequency difference; a third determining unit 650 configured to determine, for each combination of the frequency difference and the laser pulse duration, a first probability that the first ion is in an excited state at that combination; a fourth determining unit 660 configured to determine a phonon frequency based on a variation of the first probability with the frequency difference in the combination.
Here, the operations of the above units 610 to 660 of the ion trap chip parameter calibration apparatus 600 are similar to the operations of the steps 110 to 160 described above, respectively, and are not repeated here.
According to embodiments of the present disclosure, there is also provided an electronic device, a readable storage medium and a computer program product.
Referring to fig. 7, a block diagram of an electronic device 700 that may be a server or a client of the present disclosure, which is an example of a hardware device that may be applied to aspects of the present disclosure, will now be described. Electronic devices are intended to represent various forms of digital electronic computer devices, such as laptops, desktops, workstations, personal digital assistants, servers, blade servers, mainframes, and other suitable computers. The electronic device may also represent various forms of mobile devices, such as personal digital processing, cellular telephones, smartphones, wearable devices, and other similar computing devices. The components shown herein, their connections and relationships, and their functions, are meant to be exemplary only, and are not meant to limit implementations of the disclosure described and/or claimed herein.
As shown in fig. 7, the electronic device 700 includes a computing unit 701 that can perform various appropriate actions and processes according to a computer program stored in a Read Only Memory (ROM) 702 or a computer program loaded from a storage unit 708 into a Random Access Memory (RAM) 703. In the RAM 703, various programs and data required for the operation of the electronic device 700 may also be stored. The computing unit 701, the ROM 702, and the RAM 703 are connected to each other through a bus 704. An input/output (I/O) interface 705 is also connected to bus 704.
Various components in the electronic device 700 are connected to the I/O interface 705, including: an input unit 706, an output unit 707, a storage unit 708, and a communication unit 709. The input unit 706 may be any type of device capable of inputting information to the electronic device 700, the input unit 706 may receive input numeric or character information and generate key signal inputs related to user settings and/or function control of the electronic device, and may include, but is not limited to, a mouse, a keyboard, a touch screen, a trackpad, a trackball, a joystick, a microphone, and/or a remote control. The output unit 707 may be any type of device capable of presenting information and may include, but is not limited to, a display, speakers, video/audio output terminals, vibrators, and/or printers. Storage unit 708 may include, but is not limited to, magnetic disks, optical disks. The communication unit 709 allows the electronic device 700 to exchange information/data with other devices through computer networks, such as the internet, and/or various telecommunications networks, and may include, but is not limited to, modems, network cards, infrared communication devices, wireless communication transceivers and/or chipsets, such as bluetooth devices, 802.11 devices, wiFi devices, wiMax devices, cellular communication devices, and/or the like.
The computing unit 701 may be a variety of general and/or special purpose processing components having processing and computing capabilities. Some examples of computing unit 701 include, but are not limited to, a Central Processing Unit (CPU), a Graphics Processing Unit (GPU), various specialized Artificial Intelligence (AI) computing chips, various computing units running machine learning model algorithms, a Digital Signal Processor (DSP), and any suitable processor, controller, microcontroller, etc. The computing unit 701 performs the various methods and processes described above, such as method 100. For example, in some embodiments, the method 100 may be implemented as a computer software program tangibly embodied on a machine-readable medium, such as the storage unit 708. In some embodiments, part or all of the computer program may be loaded and/or installed onto the electronic device 700 via the ROM 702 and/or the communication unit 709. When the computer program is loaded into RAM 703 and executed by computing unit 701, one or more steps of method 100 described above may be performed. Alternatively, in other embodiments, the computing unit 701 may be configured to perform the method 100 by any other suitable means (e.g., by means of firmware).
Various implementations of the systems and techniques described here above may be implemented in digital electronic circuitry, integrated circuit systems, field Programmable Gate Arrays (FPGAs), application Specific Integrated Circuits (ASICs), application Specific Standard Products (ASSPs), systems On Chip (SOCs), complex Programmable Logic Devices (CPLDs), computer hardware, firmware, software, and/or combinations thereof. These various embodiments may include: implemented in one or more computer programs, the one or more computer programs may be executed and/or interpreted on a programmable system including at least one programmable processor, which may be a special purpose or general-purpose programmable processor, that may receive data and instructions from, and transmit data and instructions to, a storage system, at least one input device, and at least one output device.
Program code for carrying out methods of the present disclosure may be written in any combination of one or more programming languages. These program code may be provided to a processor or controller of a general purpose computer, special purpose computer, or other programmable data processing apparatus such that the program code, when executed by the processor or controller, causes the functions/operations specified in the flowchart and/or block diagram to be implemented. The program code may execute entirely on the machine, partly on the machine, as a stand-alone software package, partly on the machine and partly on a remote machine or entirely on the remote machine or server.
In the context of this disclosure, a machine-readable medium may be a tangible medium that can contain, or store a program for use by or in connection with an instruction execution system, apparatus, or device. The machine-readable medium may be a machine-readable signal medium or a machine-readable storage medium. The machine-readable medium may include, but is not limited to, an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system, apparatus, or device, or any suitable combination of the foregoing. More specific examples of a machine-readable storage medium would include an electrical connection based on one or more wires, a portable computer diskette, a hard disk, a Random Access Memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disc read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing.
To provide for interaction with a user, the systems and techniques described here can be implemented on a computer having: a display device (e.g., a CRT (cathode ray tube) or LCD (liquid crystal display) monitor) for displaying information to a user; and a keyboard and pointing device (e.g., a mouse or trackball) by which a user can provide input to the computer. Other kinds of devices may also be used to provide for interaction with a user; for example, feedback provided to the user may be any form of sensory feedback (e.g., visual feedback, auditory feedback, or tactile feedback); and input from the user may be received in any form, including acoustic input, speech input, or tactile input.
The systems and techniques described here can be implemented in a computing system that includes a background component (e.g., as a data server), or that includes a middleware component (e.g., an application server), or that includes a front-end component (e.g., a user computer having a graphical user interface or a web browser through which a user can interact with an implementation of the systems and techniques described here), or any combination of such background, middleware, or front-end components. The components of the system can be interconnected by any form or medium of digital data communication (e.g., a communication network). Examples of communication networks include: local Area Networks (LANs), wide Area Networks (WANs), the internet, and blockchain networks.
The computer system may include a client and a server. The client and server are typically remote from each other and typically interact through a communication network. The relationship of client and server arises by virtue of computer programs running on the respective computers and having a client-server relationship to each other. The server may be a cloud server, a server of a distributed system, or a server incorporating a blockchain.
It should be appreciated that various forms of the flows shown above may be used to reorder, add, or delete steps. For example, the steps recited in the present disclosure may be performed in parallel, sequentially or in a different order, provided that the desired results of the disclosed aspects are achieved, and are not limited herein.
Although embodiments or examples of the present disclosure have been described with reference to the accompanying drawings, it is to be understood that the foregoing methods, systems, and apparatus are merely exemplary embodiments or examples, and that the scope of the present invention is not limited by these embodiments or examples but only by the claims following the grant and their equivalents. Various elements of the embodiments or examples may be omitted or replaced with equivalent elements thereof. Furthermore, the steps may be performed in a different order than described in the present disclosure. Further, various elements of the embodiments or examples may be combined in various ways. It is important that as technology evolves, many of the elements described herein may be replaced by equivalent elements that appear after the disclosure.

Claims (15)

1. An ion trap chip parameter calibration method comprises the following steps:
Determining the position of a first ion to be calibrated in the ion trap chip;
acquiring and determining an initial frequency difference between two laser beams split by a beam splitter;
irradiating the first ions through a laser, and determining equivalent amplitude of the laser after irradiating the first ions;
adjusting the frequency difference between the two laser beams, and determining the laser pulse duration corresponding to the current frequency difference, wherein the laser pulse duration is based on a formulaDetermining the laser pulse duration τ opt Wherein n is an odd number, Ω is the equivalent amplitude, and Δ is the frequency difference;
for each combination of the frequency difference and the laser pulse duration, determining a first probability that the first ion is in an excited state at that combination;
a phonon frequency is determined based on a variation of the first probability with the frequency difference in the combination.
2. The method of claim 1, further comprising:
changing the frequency difference between two laser beams divided by a beam splitter according to a first preset step length in a first preset range to determine a second probability that the first ions are in an excited state under each frequency difference, wherein the frequency difference in the first preset range is close to the phonon frequency in the preset range;
Performing a function fit based on the second probability as a function of the frequency difference to determine a coupling strength between the first ion and the corresponding phonon based on a fit result, wherein the function fit is performed based on the following formula:
wherein P is e (delta, tau) is the second probability that the first ion is in an excited state, eta is the coupling strength between the first ion and the corresponding phonon, omega is the equivalent amplitude, delta is the frequency difference, omega is the phonon frequency, and tau is the laser pulse duration corresponding to the frequency difference corresponding to the phonon frequency.
3. The method of claim 1, wherein determining the location of the first ion to be calibrated in the ion trap chip comprises: and changing the incident angle of the laser according to a second preset step length within a second preset range so as to determine the position of the first ion through fluorescence imaging.
4. The method of claim 1, wherein determining an equivalent amplitude of the laser after irradiating the first ions comprises:
adjusting pulse durations of the laser and determining a third probability that the first ion is in an excited state after irradiating the first ion by the laser at each pulse duration;
Determining the duration of the corresponding laser pulse when the third probability of the first ion in the excited state is close to 1; and
and determining the equivalent amplitude of the laser after irradiating the first ion based on the corresponding laser pulse duration when the third probability is close to 1.
5. The method of claim 4, wherein the equivalent amplitude Ω of the laser after irradiation with the first ion is determined based on the following formula:
Ω=π/2τ
where τ is the corresponding pulse duration when the probability of the first ion being in the excited state is close to 1.
6. The method of any of claims 1-5, wherein an initial frequency difference between two lasers split by a beam splitter of the laser is determined based on a frequency difference between the first ion g > state and e > state.
7. An ion trap chip parameter calibration device, comprising:
a first determining unit configured to determine a position of a first ion to be calibrated in the ion trap chip;
an acquisition unit configured to acquire and determine an initial frequency difference between two laser beams divided by a beam splitter;
a second determining unit configured to determine an equivalent amplitude of the laser light after irradiating the first ion by irradiating the first ion with the laser light;
A first adjusting unit configured to adjust a frequency difference between the two lasers and determine a laser pulse duration corresponding to the current frequency difference, wherein the first adjusting unit is based on a formulaDetermining the laser pulse duration τ opt Wherein n is an odd number, Ω is the equivalent amplitude, and Δ is the frequency difference;
a third determination unit configured to determine, for each combination of the frequency difference and the laser pulse duration, a first probability that the first ion is in an excited state at that combination;
and a fourth determining unit configured to determine a phonon frequency based on a variation of the first probability with the frequency difference in the combination.
8. The apparatus of claim 7, further comprising:
a second adjusting unit configured to change a frequency difference between two laser beams divided by a beam splitter by a first preset step size within a first preset range to determine a second probability that the first ion is in an excited state at each frequency difference, wherein the frequency difference within the first preset range is close to the phonon frequency within the preset range;
a fifth determining unit configured to perform a function fitting based on a variation of the second probability with the frequency difference to determine a coupling strength between the first ion and the corresponding phonon based on a fitting result, wherein the function fitting is performed based on the following formula:
Wherein P is e (delta, tau) is the second probability that the first ion is in an excited state, eta is the coupling strength between the first ion and the corresponding phonon, omega is the equivalent amplitude, delta is the frequency difference, omega is the phonon frequency, and tau is the laser pulse duration corresponding to the frequency difference corresponding to the phonon frequency.
9. The apparatus of claim 7, wherein the first determining unit comprises: and means for changing the angle of incidence of the laser within a second preset range by a second preset step to determine the position of the first ions by fluorescence imaging.
10. The apparatus of claim 7, wherein the second determining unit comprises:
means for adjusting pulse durations of the laser and determining a third probability that the first ion is in an excited state after irradiation of the first ion by the laser at each pulse duration;
means for determining a laser pulse duration corresponding to a third probability of the first ion being in an excited state approaching 1; and
and determining an equivalent amplitude of the laser after irradiating the first ion based on a laser pulse duration corresponding to when the third probability is close to 1.
11. The apparatus of claim 10, wherein the equivalent amplitude Ω of the laser after irradiation with the first ion is determined based on the following formula:
Ω=π/2τ
where τ is the corresponding pulse duration when the probability of the first ion being in the excited state is close to 1.
12. The apparatus of any of claims 7-11, wherein an initial frequency difference between two lasers split by a beam splitter of the laser is determined based on a frequency difference between the first ion g > state and e > state.
13. An electronic device, comprising:
at least one processor; and
a memory communicatively coupled to the at least one processor; wherein the method comprises the steps of
The memory stores instructions executable by the at least one processor to enable the at least one processor to perform the method of any one of claims 1-6.
14. A non-transitory computer readable storage medium storing computer instructions for causing the computer to perform the method of any one of claims 1-6.
15. A computer program product comprising a computer program, wherein the computer program, when executed by a processor, implements the method of any of claims 1-6.
CN202311443801.0A 2023-11-01 2023-11-01 Ion trap chip parameter determining method and device, electronic equipment and medium Pending CN117371547A (en)

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