CN117371397B - Method and device for constructing thermal resistance model of GAN HEMT device, storage medium and terminal - Google Patents
Method and device for constructing thermal resistance model of GAN HEMT device, storage medium and terminal Download PDFInfo
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Abstract
The invention discloses a method and a device for constructing a thermal resistance model of a GAN HEMT device, a storage medium and a terminal, wherein the method comprises the steps of constructing a three-dimensional model of a transistor by constructing parameters of the GaN HEMT device; determining a dielectric region, a substrate region and a metal region of the GaN HEMT device; acquiring a thermal resistance model of the dielectric region based on the semiconductor heat transfer theory and the Laplace equation to serve as a dielectric thermal resistance model, and acquiring a thermal resistance model of the substrate region based on the semiconductor heat transfer theory and the Laplace equation to serve as a substrate thermal resistance model; acquiring a thermal resistance model of the metal region based on a Laplace equation of the optimization correction term to serve as a metal thermal resistance model; and obtaining a thermal resistance model of the GaN HEMT device based on the dielectric thermal resistance model, the substrate thermal resistance model and the metal thermal resistance model. The thermal characteristics of the complex metal layout layer are evaluated and analyzed by adopting a mode of combining physical analysis and coefficient optimization, so that the constructed thermal resistance model can effectively solve the problems of lower precision and poor practicability in engineering application.
Description
Technical Field
The application belongs to the technical field of semiconductors, relates to a method for constructing a thermal resistance model of a GAN HEMT device, and particularly relates to a method and a device for constructing a thermal resistance model of a GAN HEMT device, a storage medium and a terminal.
Background
The method for constructing the thermal resistance model of the GaN HEMT (gallium nitride high electron mobility transistor) device commonly used in the semiconductor industry comprises the following steps: obtaining the temperature distribution of the device by adopting a thermal test or numerical simulation calculation mode; meanwhile, the ratio of the temperature distribution difference to the heat source is utilized to solve the thermal resistance value. The current common thermal test method used at home and abroad has the problems of lower junction temperature prediction precision, higher cost and the like in the process of obtaining the junction temperature of the device, and the practical application is difficult. Therefore, the junction temperature is extracted by three-dimensional numerical simulation software and is a common method for heat designers at present. Although the method can accurately acquire the channel temperature and the thermal distribution cloud image of the device, the thermal model construction, gridding setting and solving calculation processes of the device are time-consuming, and meanwhile, the method also has higher computer performance, and is not practical for a large number of device thermal evaluations, circuit thermal designs and device modeling researches.
Based on the above, based on the result of numerical simulation, researchers have proposed a physical analysis thermal resistance model construction method based on the thermal conduction theory, which can rapidly capture the thermal resistance of a device, but only considers the influence of a device substrate and a dielectric layer on the heat dissipation capacity of the device, ignoring the influence of a complicated and high-density metal circuit layer on the heat dissipation characteristic of the device. Therefore, the method has larger error and lower precision when being applied to actual engineering.
Disclosure of Invention
The invention aims to provide a method and a device for constructing a thermal resistance model of a GaN HEMT device, a storage medium and a terminal, which are used for solving the problems that the existing physical analysis thermal resistance model constructing method based on a heat conduction theory ignores the influence of a metal circuit layer on the heat dissipation characteristic of the device, so that the error is larger and the precision is lower when the method is applied in actual engineering.
In a first aspect, the present application provides a method for constructing a thermal resistance model of a GAN HEMT device, including:
acquiring GAN HEMT device parameters, and constructing a transistor three-dimensional model based on the GAN HEMT device parameters;
determining a dielectric region, a substrate region and a metal region of the GAN HEMT device based on the transistor three-dimensional model;
acquiring a thermal resistance model of the dielectric region based on a semiconductor heat transfer theory and a Laplace equation to serve as a dielectric thermal resistance model, and acquiring a thermal resistance model of the substrate region based on the semiconductor heat transfer theory and the Laplace equation to serve as a substrate thermal resistance model;
acquiring a thermal resistance model of the metal region based on a Laplace equation of the optimization correction term to serve as a metal thermal resistance sub-model;
and acquiring a thermal resistance model of the GAN HEMT device based on the dielectric thermal resistance model, the substrate thermal resistance model and the metal thermal resistance model.
In an embodiment of the present application, obtaining the thermal resistance model of the dielectric region based on the semiconductor heat transfer theory and the laplace equation as the dielectric thermal resistance model includes:
determining the conduction temperature of the medium area in the form of a long cylinder based on the semiconductor heat transfer theory;
acquiring the dielectric thermal resistor model based on a long cylindrical Laplace equation;
wherein the dielectric thermal resistor model is:
wherein,representing a model of the thermal resistor of the medium,represents the gate index of the gate,the gate width is indicated as such,indicating the thermal conductivity of the dielectric region,the gate length is indicated as being the length of the gate,indicating the dielectric layer thickness.
In one embodiment of the present application, obtaining the thermal resistance model of the substrate region based on the semiconductor heat transfer theory and the laplace equation as the substrate thermal resistance sub-model includes:
determining the conduction temperature of the near heat source substrate layer in the form of a long sphere based on a semiconductor heat transfer theory, and determining the conduction temperature of the far heat source substrate layer in the form of an elliptic cylinder;
obtaining a near-substrate thermal resistor model by adopting a fitting coefficient mode based on a Laplacian equation of a long spheroid, obtaining a far-substrate thermal resistor model by adopting a fitting coefficient mode based on an elliptic cylinder form Laplacian equation, and obtaining a substrate thermal resistor model based on the near-substrate thermal resistor model and the far-substrate thermal resistor model;
wherein the near-substrate thermal resistor model is:
wherein,in order to be a near-substrate thermal resistor model,represents the gate index of the gate,the gate width is indicated as such,representing the thermal conductivity of the substrate region,indicating the thickness of the near-substrate layer,representing the gate pitch of the gate,representing a near fitting coefficient;
the remote substrate thermal resistor model is:
wherein,in order to far away from the substrate thermal resistor model,representing the gate pitch of the gate,represents the gate index of the gate,the gate width is indicated as such,representing the thermal conductivity of the substrate region,indicating the thickness of the distal substrate layer,representing the far fitting coefficients;
the substrate thermal resistor model is as follows:
。
in an embodiment of the present application, the metal thermal resistor model is:
wherein,is a model of a metal thermal resistor,in order to correct the coefficient of the coefficient,representing the thermal conductivity of the metal region,represents the gate index of the gate,the gate width is indicated as such,indicating the metal length.
In an embodiment of the present application, in the step of determining the dielectric region, the substrate region and the metal region of the GAN HEMT device based on the transistor three-dimensional model, the method further includes: and determining a heat sink area of the GAN HEMT device based on the transistor three-dimensional model.
In an embodiment of the present application, the step of obtaining the thermal resistance model of the metal region based on the laplace equation of the optimization correction term as the metal thermal resistor model and the step of obtaining the thermal resistance model of the GAN HEMT device based on the dielectric thermal resistor model, the substrate thermal resistor model and the metal thermal resistor model further include:
acquiring a thermal resistance model of the heat sink area based on a one-dimensional thermal conduction mode to serve as a heat sink thermal resistance sub-model;
wherein, the heat sink thermal resistor model is:
wherein,representing a model of the heat sink thermal resistor,representing heatThe thickness of the sinking region is equal to the thickness of the sinking region,representing the area of the heat sink region,representing the heat sink region thermal conductivity.
In an embodiment of the present application, the step of obtaining the thermal resistance model of the GAN HEMT device based on the dielectric thermal resistor model, the substrate thermal resistor model and the metal thermal resistor model includes:
and acquiring a thermal resistance model of the GAN HEMT device based on the dielectric thermal resistance model, the substrate thermal resistance model, the metal thermal resistance model and the heat sink thermal resistance model.
In an embodiment of the present application, the GAN HEMT device is a GAN HEMT device.
In a second aspect, the present application further provides a device for constructing a thermal resistance model of a GAN HEMT device, including a parameter acquisition module, a region differentiating module, a dielectric substrate region thermal resistance model acquisition module, a metal region thermal resistance model acquisition module, and a thermal resistance model acquisition module;
the parameter acquisition module is used for acquiring parameters of the GAN HEMT device and constructing a transistor three-dimensional model based on the parameters of the GAN HEMT device;
the region distinguishing module is used for determining a dielectric region, a substrate region and a metal region of the GAN HEMT device based on the transistor three-dimensional model;
the medium substrate region thermal resistance model acquisition module is used for acquiring a thermal resistance model of the medium region based on a semiconductor heat transfer theory and a Laplace equation to serve as a medium thermal resistance model, and acquiring a thermal resistance model of the substrate region based on the semiconductor heat transfer theory and the Laplace equation to serve as a substrate thermal resistance model;
the metal region thermal resistance model acquisition module is used for acquiring a thermal resistance model of the metal region based on a Laplace equation of an optimization correction term to serve as a metal thermal resistance model;
the thermal resistance model obtaining module is used for obtaining a thermal resistance model of the GAN HEMT device based on the dielectric thermal resistance model, the substrate thermal resistance model and the metal thermal resistance model.
In a third aspect, the present application further provides a storage medium, on which a computer program is stored, where the program when executed by a processor implements the method for constructing a thermal resistance model of a GAN HEMT device.
In a fourth aspect, the present application further provides a terminal, including: the device comprises a processor and a memory, wherein the memory is in communication connection with the processor;
the memory is used for storing a computer program, and the processor is used for executing the computer program stored in the memory, so that the terminal executes the method for constructing the thermal resistance model of the GAN HEMT device.
One or more embodiments of the above-described solution may have the following advantages or benefits compared to the prior art:
by applying the method for constructing the thermal resistance model of the GAN HEMT device, provided by the embodiment of the invention, the metal thermal resistance model based on the Laplace equation is provided by optimizing the correction term, so that the problem of neglecting the influence of the metal circuit layer on the heat dissipation characteristic of the device at present is solved, and the error is reduced and the precision is improved when the method for constructing the thermal resistance model is applied to actual engineering. Meanwhile, aiming at the substrate area, the method of fitting coefficients is adopted to simplify the items with smaller influence in the analysis equation, the convergence of the device model is optimized, and the expansibility and the practicability of the thermal resistance model in the aspects of device modeling and circuit thermal design are greatly improved. Considering the heat dissipation influence of the metal distribution layer under different gate widths and gate index structure parameters of the GaN HEMT device, the thermal characteristics of the complex metal layout layer are evaluated and analyzed in a mode of combining physical analysis and coefficient optimization, so that the constructed thermal resistance model can effectively solve the problems of lower precision and poor practicability in engineering application. The invention provides a high-precision GaN HEMT device thermal resistance model construction method for circuit design, device modeling, thermal evaluation and the like of designers.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification, illustrate the invention and together with the embodiments of the invention, serve to explain the invention, without limitation to the invention. In the drawings:
fig. 1 is a schematic flow chart of a method for constructing a thermal resistance model of a GAN HEMT device according to an embodiment of the disclosure.
Fig. 2 is a schematic structural diagram of a three-dimensional model of a GaN HEMT device according to an embodiment of the method of the present application.
Fig. 3 is a schematic diagram of a partition structure of a three-dimensional model of a GaN HEMT device according to an embodiment of the method.
Fig. 4 is a schematic diagram showing comparison of thermal resistance values obtained by adopting a method for constructing a thermal resistance model of a GAN HEMT device based on GAN and a method for constructing a thermal resistance model of a GAN HEMT device based on conventional three-dimensional numerical analysis in an embodiment of the method.
Fig. 5 is a schematic structural diagram of a device for constructing a thermal resistance model of a GAN HEMT device according to an embodiment of the disclosure.
Fig. 6 is a schematic structural diagram of a terminal according to an embodiment of the present application.
Detailed Description
Other advantages and effects of the present application will become apparent to those skilled in the art from the present disclosure, when the following description of the embodiments is taken in conjunction with the accompanying drawings. The present application may be embodied or carried out in other specific embodiments, and the details of the present application may be modified or changed from various points of view and applications without departing from the spirit of the present application. It should be noted that the following embodiments and features in the embodiments may be combined with each other without conflict.
It should be noted that, the illustrations provided in the following embodiments merely illustrate the basic concepts of the application by way of illustration, and only the components related to the application are shown in the drawings and are not drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of the components in actual implementation may be arbitrarily changed, and the layout of the components may be more complex.
The following embodiment of the application provides a method and a device for constructing a thermal resistance model of a GAN HEMT device, a storage medium and a terminal, and solves the problems that an existing physical analysis thermal resistance model constructing method based on a heat conduction theory ignores the influence of a metal circuit layer on the heat dissipation characteristic of the device, so that the error is larger and the precision is lower in actual engineering application.
The following will explain the principle and implementation of a method and device for constructing a thermal resistance model of a GAN HEMT device, a storage medium and a terminal of the present embodiment in detail by referring to the accompanying drawings, so that those skilled in the art can understand the method and device for constructing a thermal resistance model of a GAN HEMT device, the storage medium and the terminal of the present embodiment without creative labor.
As shown in fig. 1, the embodiment provides a method for constructing a thermal resistance model of a GAN HEMT device, which includes the following steps.
Step S101, acquiring parameters of a GAN HEMT device, and constructing a transistor three-dimensional model based on the parameters of the GAN HEMT device.
Specifically, the parameters of the GAN HEMT device to be subjected to thermal resistance model construction are obtained through downloading or other reasonable modes, wherein the parameters of the GAN HEMT device comprise corresponding technological parameters of the GAN HEMT device, material parameter information related to thermal simulation, layout information and the like. The material parameter information related to thermal simulation specifically comprises materials, heat conductivity, density, constant-pressure heat capacity and the like of areas of the GAN HEMT device such as a medium area, a substrate area, a metal area and the like. The material parameter information related to the thermal simulation of the GAN HEMT device can be used for acquiring a thermal resistance model of each subsequent region.
And then constructing a transistor three-dimensional model of the GAN HEMT device based on the GAN HEMT device parameters. An example of a three-dimensional model of the constructed GaN HEMT transistor is shown in fig. 2. It should be noted that, the process of acquiring the parameters of the GAN HEMT device and constructing the three-dimensional model of the corresponding transistor based on the parameters of the GAN HEMT device is the prior art, and will not be described in detail herein.
Step S102, determining a dielectric region, a substrate region and a metal region of the GAN HEMT device based on the transistor three-dimensional model.
As shown in fig. 3, according to the theory of semiconductor heat transfer, the GaN HEMT device is divided into a plurality of regions based on the materials used for each region for analysis. The GAN HEMT device can be specifically divided into a dielectric region, a substrate region and a metal region. The dielectric region corresponds to a GaN material layer, the substrate region corresponds to a SiC substrate material layer, and the metal region corresponds to a metal layer of the wiring. Further part of the GaN HEMT device can comprise a heat sink area besides the upper area, and the heat sink area corresponds to a copper or gold material layer.
Step S103, a thermal resistance model of the dielectric region is obtained based on the semiconductor heat transfer theory and the Laplace equation to serve as a dielectric thermal resistance model, and a thermal resistance model of the substrate region is obtained based on the semiconductor heat transfer theory and the Laplace equation to serve as a substrate thermal resistance model.
Specifically, according to the semiconductor heat transfer theory, the isothermal surface of the dielectric region of the GaN HEMT device is in the form of a long cylinder to conduct temperature, so that a dielectric thermal resistor model needs to be obtained based on a laplace equation of the long cylinder. Further dielectric thermal resistor models can be expressed as:
wherein,representing a model of the thermal resistor of the medium,represents the gate index of the gate,the gate width is indicated as such,indicating the thermal conductivity of the dielectric region,the gate length is indicated as being the length of the gate,indicating the dielectric layer thickness.
According to the theory of semiconductor heat transfer, the substrate region of the GaN HEMT device can be divided into two parts, namely a near heat source substrate region and a far heat source substrate region, wherein the isothermal surface of the near heat source substrate region conducts temperature in the form of a long sphere, and the isothermal surface of the far heat source substrate region conducts temperature in the form of an elliptic cylinder. Therefore, the thermal resistance model of the near-heat source substrate region needs to be solved based on the Laplacian equation of the long spheroid, but the thermal resistance equation solved by the method is complex, so that the method adopts a fitting coefficient mode to replace the item with smaller influence on the temperature variation of the near-heat source substrate region, and the purpose of simplifying the thermal resistance model is achieved.
Further near-substrate thermal resistor models can be expressed as:
wherein,in order to be a near-substrate thermal resistor model,represents the gate index of the gate,the gate width is indicated as such,representing the thermal conductivity of the substrate region,indicating the thickness of the near-substrate layer,representing the gate pitch of the gate,representing the near fitting coefficients. Wherein the fitting coefficients are closeTypically 10 4 Magnitude, preferably near fitting coefficientCan be set as 3.246 multiplied by 10 4 。
In this embodiment, the thermal resistance model of the remote heat source substrate area needs to be solved based on the laplace equation of the elliptic cylinder, and in the same way, the term with smaller influence on the temperature variation of the remote heat source substrate area is replaced by adopting a fitting coefficient mode.
Further away from the substrate thermal resistor model can be expressed as:
wherein,in order to far away from the substrate thermal resistor model,representing the gate pitch of the gate,represents the gate index of the gate,the gate width is indicated as such,representing the thermal conductivity of the substrate region,indicating the thickness of the distal substrate layer,representing the far fitting coefficients. Wherein the distance fitting coefficientTypically of the order of 10, preferably the far fitting coefficientMay be provided as 9.249.
And finally, obtaining a substrate thermal resistor model based on the obtained near substrate thermal resistor model and the obtained far substrate thermal resistor model, wherein the expression of the substrate thermal resistor model is as follows:
=+
wherein,in order to provide a thermal resistor model of the substrate,in order to be a near-substrate thermal resistor model,is a remote substrate thermal resistor model.
Step S104, obtaining a thermal resistance model of the metal region based on the Laplace equation of the optimization correction term to serve as a metal thermal resistance sub-model.
Specifically, since the metal region includes a complicated wiring layer, and the thermal analysis is very complicated, the thermal resistance of the metal layer is analyzed by adopting a method of optimizing the correction term, and the metal thermal resistance model after optimizing the correction term can be expressed as:
wherein,is metalThe thermal resistance model is used for the thermal resistance model,in order to correct the coefficient of the coefficient,representing the thermal conductivity of the metal region,represents the gate index of the gate,the gate width is indicated as such,indicating the metal length. In the actual implementation process, the correction coefficientThe thermal resistance model of the existing GaN HEMT device can be obtained by substituting the thermal resistance model and corresponding parameters based on the same type of the existing GaN HEMT device, and the thermal resistance model of the existing GaN HEMT device can be obtained by adopting a traditional three-dimensional numerical analysis thermal resistance model building method or other reasonable methods of the GaN HEMT device.
Step S105, obtaining a thermal resistance model of the GaN HEMT device based on the dielectric thermal resistance model, the substrate thermal resistance model and the metal thermal resistance model.
And finally, combining the obtained dielectric thermal resistor model, the substrate thermal resistor model and the metal thermal resistor model to obtain a thermal resistor model of the GaN HEMT device, wherein the expression of the thermal resistor model of the GaN HEMT device is as follows:
R re =++
wherein R is re Is a thermal resistance model of the GaN HEMT device,is a model of a metal thermal resistor,in the form of a dielectric thermal resistor model,is a substrate thermal resistor model.
If the GaN HEMT device may further include a heat sink region in addition to the plurality of regions, the heat sink region needs to be considered in the process of obtaining the thermal resistance model of the GaN HEMT device. The corresponding thermal resistor model of the heat sink area is obtained by the following steps: based on the semiconductor heat transfer theory, it can be determined that the heat sink region of the GaN HEMT device is subjected to temperature propagation in a one-dimensional heat conduction mode. Taking a thermal resistance model of the heat sink area as a heat sink thermal resistance sub-model, wherein the expression of the heat sink thermal resistance sub-model is as follows:
wherein,representing a model of the heat sink thermal resistor,representing the thickness of the heat sink region,representing the area of the heat sink region,representing the heat sink region thermal conductivity.
At this time, the thermal resistance model of the GaN HEMT device in step S105 needs to be combined based on the dielectric thermal resistance model, the substrate thermal resistance model, the metal thermal resistance model and the heat sink thermal resistance model to form the thermal resistance model of the GaN HEMT device. The corresponding expression is:
R re =+++
wherein R is re Is a thermal resistance model of the GaN HEMT device,is a model of a metal thermal resistor,in the form of a dielectric thermal resistor model,in order to provide a thermal resistor model of the substrate,representing a heat sink thermal resistor model.
The traditional three-dimensional numerical analysis method for constructing the thermal resistance model of the GaN HEMT device is a common method for verifying the accuracy of the thermal resistance model constructed by the method for constructing the thermal resistance model of the GaN HEMT device at present. In order to verify the accuracy of the thermal resistance model of the GaN HEMT device constructed by the thermal resistance model construction method of the GaN HEMT device, the thermal resistance value is solved by adopting the thermal resistance model construction method of the GaN HEMT device through traditional three-dimensional numerical analysis, and the thermal resistance value is compared with the device thermal resistance value obtained by the method to verify the applicability and accuracy of the thermal resistance model construction method of the GaN HEMT device. In particular, in this embodiment, gaN HEMT devices with different gate widths and gate index structure parameters are selected to verify the thermal resistance model method constructed by the present invention, and the comparison result is shown in fig. 4. According to the comparison result, the thermal resistance value of the model constructed by the method for constructing the GaN HEMT device thermal resistance model almost coincides with the thermal resistance value of the model constructed by the traditional method for constructing the three-dimensional numerical analysis GaN HEMT device thermal resistance model, so that the thermal resistance model constructed by the method for constructing the GaN HEMT device thermal resistance model has good accuracy and precision.
According to the method for constructing the thermal resistance model of the GAN HEMT device, provided by the embodiment of the invention, the metal thermal resistance model based on the Laplace equation is provided by optimizing the correction term, so that the problem of neglecting the influence of the metal circuit layer on the heat dissipation characteristic of the device at present is solved, and the error is reduced and the precision is improved when the method for constructing the thermal resistance model is applied to actual engineering. Meanwhile, aiming at the substrate area, the method of fitting coefficients is adopted to simplify the items with smaller influence in the analysis equation, the convergence of the device model is optimized, and the expansibility and the practicability of the thermal resistance model in the aspects of device modeling and circuit thermal design are greatly improved. Considering the heat dissipation influence of the metal distribution layer under different gate widths and gate index structure parameters of the GaN HEMT device, the thermal characteristics of the complex metal layout layer are evaluated and analyzed in a mode of combining physical analysis and coefficient optimization, so that the constructed thermal resistance model can effectively solve the problems of lower precision and poor practicability in engineering application. The invention provides a high-precision GaN HEMT device thermal resistance model construction method for circuit design, device modeling, thermal evaluation and the like of designers.
As shown in fig. 5, the embodiment provides a device for constructing a thermal resistance model of a GAN HEMT device, which includes a parameter acquisition module, a region differentiating module, a dielectric substrate region thermal resistance sub-model acquisition module, a metal region thermal resistance sub-model acquisition module, and a thermal resistance model acquisition module.
The parameter acquisition module is used for acquiring parameters of the GAN HEMT device and constructing a transistor three-dimensional model based on the parameters of the GAN HEMT device.
The region distinguishing module is used for determining a dielectric region, a substrate region and a metal region of the GAN HEMT device based on the transistor three-dimensional model.
The medium substrate region thermal resistance model acquisition module is used for acquiring a thermal resistance model of the medium region based on the semiconductor heat transfer theory and the Laplace equation to serve as a medium thermal resistance model, and acquiring a thermal resistance model of the substrate region based on the semiconductor heat transfer theory and the Laplace equation to serve as a substrate thermal resistance model.
The metal region thermal resistor model acquisition module is used for acquiring a thermal resistor model of the metal region based on a Laplace equation of the optimization correction term to serve as a metal thermal resistor model.
The thermal resistance model acquisition module is used for acquiring a thermal resistance model of the GAN HEMT device based on the dielectric thermal resistance model, the substrate thermal resistance model and the metal thermal resistance model.
According to the GAN HEMT device thermal resistance model construction device provided by the embodiment of the invention, the metal thermal resistance model based on the Laplace equation is provided by optimizing the correction term, so that the problem of neglecting the influence of the metal circuit layer on the device heat radiation characteristic at present is solved, and the error is reduced and the precision is improved when the thermal resistance model construction method is applied to actual engineering. Meanwhile, aiming at the substrate area, the method of fitting coefficients is adopted to simplify the items with smaller influence in the analysis equation, the convergence of the device model is optimized, and the expansibility and the practicability of the thermal resistance model in the aspects of device modeling and circuit thermal design are greatly improved. Considering the heat dissipation influence of the metal distribution layer under different gate widths and gate index structure parameters of the GaN HEMT device, the thermal characteristics of the complex metal layout layer are evaluated and analyzed in a mode of combining physical analysis and coefficient optimization, so that the constructed thermal resistance model can effectively solve the problems of lower precision and poor practicability in engineering application. The invention provides a high-precision GaN HEMT device thermal resistance model construction method for circuit design, device modeling, thermal evaluation and the like of designers.
Embodiments of the present application also provide a computer-readable storage medium. Those of ordinary skill in the art will appreciate that all or part of the steps in the method implementing the above embodiments may be implemented by a program to instruct a processor, where the program may be stored in a computer readable storage medium, where the storage medium is a non-transitory (non-transitory) medium, such as a random access memory, a read only memory, a flash memory, a hard disk, a solid state disk, a magnetic tape (magnetic tape), a floppy disk (floppy disk), an optical disk (optical disk), and any combination thereof. The storage media may be any available media that can be accessed by a computer or a data storage device such as a server, data center, or the like that contains an integration of one or more available media. The usable medium may be a magnetic medium (e.g., a floppy disk, a hard disk, a magnetic tape), an optical medium (e.g., a digital video disc (digital video disc, DVD)), or a semiconductor medium (e.g., a Solid State Disk (SSD)), or the like.
As shown in fig. 6, an embodiment of the present application provides a terminal.
The terminal of the embodiment comprises a processor and a memory which are connected with each other; the memory is used for storing a computer program and the processor is used for executing the computer program stored in the memory, so that the terminal can realize all or part of the steps in the method of the embodiment.
The beneficial effects of all or part of the steps in the method in the above embodiment are the same as those obtained by the terminal provided in the embodiment of the present invention, and are not described in detail herein.
It should be noted that the memory may include a random access memory (Random Access Memory, abbreviated as RAM) and may further include a non-volatile memory (non-volatile memory), such as at least one magnetic disk memory. The same processor may be a general processor, including a central processing unit (Central Processing Unit, CPU for short), a network processor (Network Processor, NP for short), etc.; but also digital signal processors (Digital Signal Processing, DSP for short), application specific integrated circuits (Application Specific Integrated Circuit, ASIC for short), field programmable gate arrays (Field Programmable Gate Array, FPGA for short) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components.
Although the embodiments of the present invention are disclosed above, the embodiments are only used for the convenience of understanding the present invention, and are not intended to limit the present invention. Any person skilled in the art can make any modification and variation in form and detail without departing from the spirit and scope of the present disclosure, but the scope of the present disclosure is still subject to the scope of the present disclosure as defined by the appended claims.
Claims (7)
1. A method for constructing a thermal resistance model of a GaN HEMT device comprises the following steps:
acquiring GAN HEMT device parameters, and constructing a transistor three-dimensional model based on the GaN HEMT device parameters;
determining a dielectric region, a substrate region and a metal region of the GaN HEMT device based on the transistor three-dimensional model;
acquiring a thermal resistance model of the dielectric region based on a semiconductor heat transfer theory and a Laplace equation to serve as a dielectric thermal resistance model, and acquiring a thermal resistance model of the substrate region based on the semiconductor heat transfer theory and the Laplace equation to serve as a substrate thermal resistance model;
acquiring a thermal resistance model of the metal region based on a Laplace equation of the optimization correction term to serve as a metal thermal resistance sub-model;
acquiring a thermal resistance model of the GaN HEMT device based on the dielectric thermal resistance model, the substrate thermal resistance model and the metal thermal resistance model;
the method for obtaining the thermal resistance model of the dielectric region based on the semiconductor heat transfer theory and the Laplace equation to serve as a dielectric thermal resistance model comprises the following steps:
determining the conduction temperature of the medium area in the form of a long cylinder based on the semiconductor heat transfer theory;
acquiring the dielectric thermal resistor model based on a long cylindrical Laplace equation;
wherein the dielectric thermal resistor model is:wherein R is g Represents a dielectric thermal resistor model, N represents a gate index, W represents a gate width, and k gmed Representing the thermal conductivity of the dielectric region, L g Represents the gate length, t gmet Representing the thickness of the dielectric layer;
acquiring a thermal resistance model of the substrate region as a substrate thermal resistance model based on semiconductor heat transfer theory and laplace's equation includes:
determining the conduction temperature of the near heat source substrate layer in the form of a long sphere based on the semiconductor heat transfer theory, and determining the conduction temperature of the far heat source substrate layer in the form of an elliptic cylinder;
obtaining a near-substrate thermal resistor model by adopting a fitting coefficient mode based on a Laplacian equation of a long spheroid, obtaining a far-substrate thermal resistor model by adopting a fitting coefficient mode based on an elliptic cylinder form Laplacian equation, and obtaining a substrate thermal resistor model based on the near-substrate thermal resistor model and the far-substrate thermal resistor model;
wherein the near-substrate thermal resistor model is:
wherein R is d_up For a near-substrate thermal resistor model, N represents the gate index, W represents the gate width, and k dmed Representing the thermal conductivity of the substrate region, t d_upmer Representing the thickness of a near substrate layer, s representing the gate spacing, and alpha representing the near fitting coefficient;
the remote substrate thermal resistor model is:
wherein R is d_down For a remote substrate thermal resistor model, s represents the gate spacing, N represents the gate index, W represents the gate width, and k dmed Representing the thermal conductivity of the substrate region, t d_downmet Representing the thickness of the far substrate layer, and beta represents the far fitting coefficient;
the substrate thermal resistor model is as follows:
R d ＝R d_up +R d_down ；
the metal thermal resistor model is as follows:
wherein R is s Is a metal thermal resistor model, gamma is a correction coefficient, k smet Represents the thermal conductivity of the metal region, N represents the gate index, W represents the gate width, L s Indicating the metal length.
2. The method according to claim 1, wherein the step of determining the dielectric region, the substrate region, and the metal region of the GAN HEMT device based on the transistor three-dimensional model further comprises: and determining a heat sink area of the GAN HEMT device based on the transistor three-dimensional model.
3. The method according to claim 2, wherein the step of obtaining the thermal resistance model of the metal region based on the laplace equation of the optimization correction term as a metal thermal resistance sub-model and the step of obtaining the thermal resistance model of the GAN HEMT device based on the dielectric thermal resistance sub-model, the substrate thermal resistance sub-model and the metal thermal resistance sub-model further comprise:
acquiring a thermal resistance model of the heat sink area based on a one-dimensional thermal conduction mode to serve as a heat sink thermal resistance sub-model;
wherein, the heat sink thermal resistor model is:
wherein R is m Representing a heat sink thermal resistor model, t heat_sink Representing the thickness of a heat sink area, A geat_sink Represents the area of a heat sink region, k heat_sink Representing the heat sink region thermal conductivity.
4. The method of constructing of claim 3, wherein the step of obtaining a thermal resistance model of the GAN HEMT device based on the dielectric thermal resistance model, the substrate thermal resistance model, and the metal thermal resistance model comprises:
and acquiring a thermal resistance model of the GAN HEMT device based on the dielectric thermal resistance model, the substrate thermal resistance model, the metal thermal resistance model and the heat sink thermal resistance model.
5. The device for constructing the thermal resistance model of the GAN HEMT device is characterized by comprising a parameter acquisition module, a region distinguishing module, a medium substrate region thermal resistance sub-model acquisition module, a metal region thermal resistance sub-model acquisition module and a thermal resistance model acquisition module;
the parameter acquisition module is used for acquiring parameters of the GAN HEMT device and constructing a transistor three-dimensional model based on the parameters of the GAN HEMT device;
the region distinguishing module is used for determining a dielectric region, a substrate region and a metal region of the GAN HEMT device based on the transistor three-dimensional model;
the medium substrate region thermal resistance model acquisition module is used for acquiring a thermal resistance model of the medium region based on a semiconductor heat transfer theory and a Laplace equation to serve as a medium thermal resistance model, and acquiring a thermal resistance model of the substrate region based on the semiconductor heat transfer theory and the Laplace equation to serve as a substrate thermal resistance model;
the metal region thermal resistance model acquisition module is used for acquiring a thermal resistance model of the metal region based on a Laplace equation of an optimization correction term to serve as a metal thermal resistance model;
the thermal resistance model obtaining module is used for obtaining a thermal resistance model of the GAN HEMT device based on the dielectric thermal resistance model, the substrate thermal resistance model and the metal thermal resistance model;
the method for obtaining the thermal resistance model of the dielectric region based on the semiconductor heat transfer theory and the Laplace equation to serve as a dielectric thermal resistance model comprises the following steps:
determining the conduction temperature of the medium area in the form of a long cylinder based on the semiconductor heat transfer theory;
acquiring the dielectric thermal resistor model based on a long cylindrical Laplace equation;
wherein the dielectric thermal resistor model is:wherein R is g Represents a dielectric thermal resistor model, N represents a gate index, W represents a gate width, and k gmed Representing the thermal conductivity of the dielectric region, L g Represents the gate length, t gmet Representing the thickness of the dielectric layer;
acquiring a thermal resistance model of the substrate region as a substrate thermal resistance model based on semiconductor heat transfer theory and laplace's equation includes:
determining the conduction temperature of the near heat source substrate layer in the form of a long sphere based on the semiconductor heat transfer theory, and determining the conduction temperature of the far heat source substrate layer in the form of an elliptic cylinder;
obtaining a near-substrate thermal resistor model by adopting a fitting coefficient mode based on a Laplacian equation of a long spheroid, obtaining a far-substrate thermal resistor model by adopting a fitting coefficient mode based on an elliptic cylinder form Laplacian equation, and obtaining a substrate thermal resistor model based on the near-substrate thermal resistor model and the far-substrate thermal resistor model;
wherein the near-substrate thermal resistor model is:
wherein R is d_up For a near-substrate thermal resistor model, N represents the gate index, W represents the gate width, and k dmed Representing the thermal conductivity of the substrate region, t d_upmet Representing the thickness of a near substrate layer, s representing the gate spacing, and alpha representing the near fitting coefficient;
the remote substrate thermal resistor model is:
wherein R is d_down For a remote substrate thermal resistor model, s represents the gate spacing, N represents the gate index, W represents the gate width, and k dmed Representing the thermal conductivity of the substrate region, t d_downmet Representing the thickness of the far substrate layer, and beta represents the far fitting coefficient;
the substrate thermal resistor model is as follows:
R d ＝R d_up +R d_down ；
the metal thermal resistor model is as follows:
wherein R is s Is a metal thermal resistor model, gamma is a correction coefficient, k smet Represents the thermal conductivity of the metal region, N represents the gate index, W represents the gate width, L s Indicating the metal length.
6. A storage medium having a computer program stored thereon, wherein the program when executed by a processor implements the GAN HEMT device thermal resistance model building method of any one of claims 1 to 4.
7. A terminal, comprising: the device comprises a processor and a memory, wherein the memory is in communication connection with the processor;
the memory is used for storing a computer program, and the processor is used for executing the computer program stored in the memory, so that the terminal executes the method for constructing the thermal resistance model of the GAN HEMT device according to any one of claims 1 to 4.
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