CN117371395A - Method for evaluating relative position relation between target grid and graph cluster in layout - Google Patents
Method for evaluating relative position relation between target grid and graph cluster in layout Download PDFInfo
- Publication number
- CN117371395A CN117371395A CN202311657077.1A CN202311657077A CN117371395A CN 117371395 A CN117371395 A CN 117371395A CN 202311657077 A CN202311657077 A CN 202311657077A CN 117371395 A CN117371395 A CN 117371395A
- Authority
- CN
- China
- Prior art keywords
- target
- distance
- graph
- pattern
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 64
- 238000005530 etching Methods 0.000 claims abstract description 28
- 238000010276 construction Methods 0.000 claims description 4
- 238000004590 computer program Methods 0.000 claims description 3
- 230000007547 defect Effects 0.000 abstract description 11
- 238000004364 calculation method Methods 0.000 abstract description 8
- 238000011156 evaluation Methods 0.000 abstract description 4
- 230000002349 favourable effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 143
- 238000012360 testing method Methods 0.000 description 9
- 238000004422 calculation algorithm Methods 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000012854 evaluation process Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 239000012792 core layer Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/39—Circuit design at the physical level
- G06F30/398—Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Evolutionary Computation (AREA)
- Geometry (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The invention discloses a method for evaluating the relative position relation between a target grid and a graph cluster in a layout, which comprises the following steps: s1, obtaining layout information, finding out all target grid patterns, finding out corresponding patterns of all target etching areas and defining the patterns as target layers; s2, setting a plurality of expansion distances, and sequentially expanding the target layer in all directions according to the expansion distances to form an expansion distance target graph, wherein the expansion distance target graph is a closed graph of a newly added graph area after expansion according to the expansion distances; s3, acquiring an extension distance corresponding to an extension distance target graph contacted by the target grid graph for the first time, and acquiring a relative distance range with a target layer as a distance interval between the target grid graph and the target layer according to the acquired extension distance and the previous group of extension distances; and obtaining the relative position relation between the target grid and the graph cluster. The method belongs to the technical field of integrated circuits, and is favorable for finding or avoiding the defects of corresponding etching processes by considering the distance range and the calculation speed in the evaluation of the relative position relationship.
Description
Technical Field
The invention belongs to the technical field of integrated circuits, and particularly relates to a method for evaluating the relative position relation between a target grid and a graph cluster in a layout.
Background
In the manufacturing process of the chip, an immature etching process may affect the devices adjacent to the target etching area, so as to affect the performance of the corresponding devices, and the extent of such an effect is closely related to the position relationship between the devices and the etching area layer, so that the requirement of evaluating the position relationship between the gate and the designated layer is generated. The evaluation of the position relationship not only can assist in designing a corresponding test structure in the design stage of the test chip for detecting whether the corresponding etching process is mature, but also can carry out merging analysis with the electrical data of the device in the test stage to judge the correlation of the position relationship and electrical abnormality, thereby judging the maturity of the corresponding etching process.
Previous methods of evaluating gate position relative to a specified pattern cluster have limitations in position definition, distance range, and speed. If the definition of the position relation is that the old method only can judge the distance between the upper, lower, left and right opposite directions, but can not judge the relative position from the grid electrode to the convex angle/concave angle of the designated graph, and can not accurately evaluate the position relation between the grid electrode and the designated graph layer; or the speed is very slow when the distance range is large, the distance range is small when the speed is in an acceptable range, and the range of the influence of the actual etching process cannot be matched, so that a method for effectively evaluating the relative position relation between the target grid and the graph cluster in the layout is needed.
Disclosure of Invention
In view of all or part of the above-mentioned deficiencies of the prior art, the object of the present invention is: the method for evaluating the relative position relation between the target grid and the graph clusters in the layout can give consideration to the distance range and the calculation speed in the relative position relation evaluation, improves the calculation speed when the distance range is large, enlarges the applicable distance range while ensuring the calculation speed so as to match the range of the influence of the actual etching process, and is beneficial to finding or avoiding the defects of the corresponding etching process.
In order to achieve the above object, the present invention provides the following technical solutions:
the invention provides a method for evaluating the relative position relation between a target grid and a graph cluster in a layout, which comprises the following steps:
s1, obtaining layout information, finding out all target grid patterns, finding out corresponding patterns of all target etching areas and defining the patterns as target layers;
s2, setting a plurality of expansion distances (of the target layer), and sequentially expanding the target layer in all directions according to the expansion distances to form an expansion distance target graph, wherein the expansion distance target graph is a closed graph of a newly added graph area after expansion according to the expansion distances;
s3, acquiring an extension distance corresponding to the extension distance target graph contacted by the target gate graph for the first time, and acquiring a relative distance range with the target layer as a distance interval between the target gate graph and the target layer according to the acquired extension distance and the previous group of extension distances;
and obtaining the relative position relation between the target grid and the graph cluster.
According to the method, the distance interval between the target grid pattern and the target layer is obtained through the range algorithm, the preliminary relative position relation between the target grid and the pattern cluster can be obtained rapidly, and the distance range between the target grid and the pattern cluster can be known, so that the influence of the etching process is deduced preliminarily. The invention improves the calculation speed when the distance range is larger, enlarges the applicable distance range while ensuring the calculation speed so as to match the range influenced by the actual etching process, and is beneficial to finding or avoiding the defects of the corresponding etching process.
The setting of the plurality of expansion distances includes:
setting step length and target interval, forming an array { N { composed of a plurality of expansion distances which are sequentially increased by the breakpoint of the target interval 0, … , N m, N m+1， …N M }，0≤m＜M，0≤N 0 ＜N M The method comprises the steps of carrying out a first treatment on the surface of the The N-th in the array m+1 Group extension distance and N m The difference in group expansion distances is greater than or equal to the nth m Group extension distance and N m-1 The difference in group spread distance, at which time m is greater than or equal to 1. Because the influence of the defect of the etching process is inversely related to the distance from the grid electrode, in the method adopting the range algorithm, the distance range setting can adopt a small step length and a large step length in a small extension distance rangeThe extended distance interval adopts a large step length, and the data precision is inversely related to the set breakpoint step length.
For each extended distance target graph formed after the extended distance is extended, recording an extended distance target graph which is contacted with the target grid, namely the whole or part of the target grid graph falls into the extended distance target graph; traversing the array, the first occurrence of the N-th m+1 The contact number of the group extension distance target graph is larger than 0, and the Nth m When the contact number of the group extension distance target graph is equal to 0, corresponding N m To N m+1 The range of (2) is the distance interval between the target gate pattern and the target layer, and the distance interval is parameterized. A method of how to obtain a distance interval of a target gate pattern from a target layer is provided.
The extended distance target graph is divided into a corner, an x side and a y side, the corner is a joint part of the x side and the y side, the extended distance target graph which is contacted with the target grid graph for the first time is obtained, the contact relation with the corner, the x side or the y side is judged, and the relative relation of the target grid at the corner position, the opposite position in the x direction or the opposite position in the y direction of the graph cluster is obtained. By dividing the extended distance target pattern into a plurality of constituent parts, the positional relationship between the gate and the designated layer can be evaluated more accurately in the determination of the corner in consideration of the relative positional relationship.
The corners are divided into an outer corner and an outer concave corner, and when the target grid electrode graph falls into the extended distance target graph for the first time, if the target grid electrode graph falls into the outer corner or the outer concave corner in all or part respectively, the target grid electrode is located at the convex corner position or the concave corner position of the graph cluster.
The construction method of the x-side, the y-side, the outer convex corner and the outer concave corner (if any) comprises the following steps: setting the front and back two groups of expansion distances as N m And N m+1 N th m The group extended distance target graph is respectively divided into N-th in x direction and y direction m+1 Group extension distance and N m Expanding the difference of the group expansion distance, subtracting the N m The x-side and the y-side are respectively obtained by the group extension distance target graph; nth (N) m+1 Subtracting the x-edge and the y-edge from a group extended distance target graph to obtain the outer flange, whereinThe intersection of the x-side and y-side is the external reentrant angle.
Recording the number of target layers, outer corners, outer concave corners (if any), x-sides and y-sides of all or part of target gate patterns which are in contact with the target gate; and obtaining an azimuth relation by judging that the target grid is contacted with a target layer, an outer corner, an outer concave corner (if the target grid exists), an x side or a y side for the first time, and parameterizing the azimuth relation. The position relation is acquired, so that the position relation of the grid electrode relative to the designated graph cluster can be acquired more accurately, the correlation between the corresponding process defect and the position relation of the relative grid electrode can be judged more accurately, and the defect of the corresponding etching process can be found or avoided.
The following logic judgment is performed to obtain the azimuth relation: if the contact quantity of the target layer, the external concave angle (if the contact quantity exists), the external convex angle, the x side or the y side is more than 0, the azimuth relation is that the target grid pattern is intersected with the target layer, and the target grid pattern is positioned at the concave angle position, the convex angle position, the x direction opposite position or the y direction opposite position of the target layer; otherwise, the target layer adjacent to the target grid pattern is not found in the appointed searching range; wherein, the judgment of the external concave angle is required before the judgment of the x side and the y side. A method for determining the azimuth relation between a target grid pattern and a target layer is provided, and a method for searching and evaluating the concave angle position and the convex angle position of a grid in a pattern cluster is also provided.
The method also comprises the step of calculating a specific distance value between the target grid pattern and the target layer.
There is also provided a computer readable storage medium having stored thereon a computer program which when executed by a processor implements the steps of a method for evaluating the relative positional relationship of a target gate and a pattern cluster in a layout as described in any of the above aspects.
Compared with the prior art, the invention has at least the following beneficial effects: according to the method, the distance interval between the target grid pattern and the target layer is obtained through the range algorithm, the preliminary relative position relation between the target grid and the pattern cluster can be obtained rapidly, and the distance range between the target grid and the pattern cluster can be known, so that the influence of the etching process is deduced preliminarily. The invention improves the calculation speed when the distance range is larger, enlarges the applicable distance range while ensuring the calculation speed so as to match the range influenced by the actual etching process, and is beneficial to finding or avoiding the defects of the corresponding etching process.
Drawings
In order to more clearly illustrate the technical solutions of specific embodiments of the present invention, the drawings that are needed in the description of the embodiments will be briefly described below, and it is obvious that the drawings described below are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort to a person of ordinary skill in the art.
FIG. 1 is a flow chart of a method for evaluating the relative positional relationship between a target gate and a pattern cluster in a layout;
FIG. 2 is an evaluation process of the relative positional relationship between the grid electrode and the pattern clusters of the p1 test case in embodiments 1-3 of the present invention;
FIG. 3 is an evaluation process of the relative positional relationship between the grid electrode and the pattern clusters of the p2 test case in embodiments 1-3 of the present invention;
FIG. 4 is an evaluation process of the relative positional relationship between the grid electrode and the pattern clusters of the p3 test case in embodiments 1-3 of the present invention;
FIG. 5 is a graph showing the evaluation of the relative position relationship between the grid electrode and the pattern clusters in the p4 test case in the embodiments 1 to 3 of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and fully, and it is apparent that the embodiments described are only some, but not all, of the embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
As shown in fig. 1, a flow chart of a method for evaluating a relative positional relationship between a target gate and a graph cluster in a layout according to the present invention is shown, and it should be noted that, in order to describe a technical solution more specifically, steps described in the following embodiments do not strictly correspond to steps described in the summary of the invention.
Example 1
The embodiment provides a method for evaluating the relative position relation between a target grid and a graph cluster in a layout, which aims to quickly acquire the relative position relation in a large distance range, and comprises the following steps (refer to fig. 1-5):
s1, obtaining layout information, finding out all target grid patterns, and defining the target grid patterns as gate layers; and finding out the corresponding graphs of all the target etching areas, and defining the graphs as target layers. Referring to fig. 2 to 5 in combination, as shown in fig. p1_1, p2_1, p3_1, and p4_1, only one target etching region corresponding pattern is taken as an example in fig. 2 to 5, in fact, there may be a plurality of target etching region corresponding patterns near the target gate pattern, and the target etching region corresponding patterns may surround the outer sides of the target gate pattern, for example, the upper side, the lower side, the left side and the right side.
S2, setting expansion distances of a plurality of target layers, wherein the embodiment adopts an array form, for example, an array { N } formed by sequentially increasing a plurality of expansion distances formed by a plurality of distance interval breakpoints is set 0, … , N m, N m+1, … NM }, M is 0.ltoreq.m < M, (M and M are integers), 0.ltoreq.N 0 ＜N M . The array forms a designated interval, and the specific steps are as follows: setting step length and distance interval, and storing the distance interval break points into an array variable (forming a plurality of expansion distances which are increased in sequence) in an array form, wherein the array is marked as an @ array. Defining element index of $n array element in array, recording last element index (or array length) of @ array as array_size,0<And n is less than or equal to $array_size. The specified interval in this embodiment is [0,4]]Units μm. In this embodiment, the array is illustratively set to: nth (N) m+1 Group extension distance and N m The difference in group expansion distances is greater than or equal to the nth m Group extension distance and N m-1 The difference of the group expansion distances is equal to or more than 1 at the moment; can also be based on the target grid under different process conditionsAnd setting the difference values of the front and rear expansion distances into different forms, such as various forms of equal difference values, gradual increase in the middle after the front is equal and then the rear is equal, according to the specific situation of the graph cluster. N in the present embodiment 0 Take the value of 0, N M The value is 4, and m is more than 0. Since the effect of the etching process defect is inversely related to the distance to the gate, the designated interval setting may employ a small step size (e.g., 0.2 μm) in a small extended distance interval and a large step size (e.g., 1 μm) in a large extended distance interval. Hyperlink", mailto, distance interval array @ array = (0,0.2,0.4,0.6,0.8,1.0,1.5,2.0,3.0) for a given specified interval in this embodiment", distance interval array @ array = (0,0.2,0.4,0.6,0.8,1.0,1.5,2.0,3.0,4.0) given a specified interval in μm in this embodiment. Definition of $ array $ n]And expanding the target layer for array elements, namely the expansion distance, wherein the expansion distance is sequentially increased. In the present embodiment, for example, $n=1, $array [1 ]]When =0.2 μm, $n=2, $array [2 ]]=0.4μm，$array[2]- $array[1]=0.2 μm. For example $n= $array size, array [9 ]]=4.0 μm. the target layer is a target layer, and the data can be set according to the actual scene without changing along with the setting of the designated section.
Sequentially expanding the target layer in all directions according to the expansion distances in the array to form an expansion distance target graph, wherein the expansion distance target graph is the Nth graph m+1 Group extended distance extended graphic region and nth m And subtracting the pattern areas after the group expansion distance expansion to obtain a closed pattern, namely adding the closed pattern of the pattern areas after the expansion distance expansion. The method comprises the following specific steps: the target layer is repeatedly defined as a target_0_temp layer and a target_0 layer (corresponding to N 0 Equal to 0); for each $array [ $n]（0<The target layer is defined to expand $array [ $n ] in all directions]The pattern produced after μm is a target_n_temp layer, the target_($n+1) _temp layer minus the target_n_temp layer to obtain a target_($n+1) layer (corresponding to the N < th > m+1 Group extended distance target graph). Referring to fig. 2 to 5 in combination, as shown in the diagrams p1_2, p2_2, p3_2, and p4_2, the target_n layer and the target_($n+1) layer in the four diagrams do not represent the same pass throughThe two identical closed patterns formed by the expansion distances of the four patterns only show that four examples adopt the same expansion mode, but specific expansion distances are different, and the target grid electrode is in contact with the target_ ($n+1) layer, but the closed patterns corresponding to the same expansion distance are not represented by the target_ ($n+1) layer in the four patterns.
S3, recording the number of the extended distance target graphs which are contacted with the target grid electrode, namely the whole or partial extended distance target graphs falling into the target grid electrode graphs, for the extended distance target graphs formed after each extended distance is extended. If the target grid electrode graph falls into the extended distance target graph for the first time in whole or in part, N corresponding to the extended distance target graph m To N m+1 Is in the range of the distance interval between the target gate pattern and the target layer, wherein N m+1 An extended distance N corresponding to the extended distance target graph contacted for the first time for the target gate graph m For the last set of extended distances. I.e. traversing the array, the first occurrence of the nth m+1 The contact number of the group extension distance target graph is larger than 0, and the Nth m When the contact number of the group extension distance target graph is equal to 0, corresponding N m To N m+1 The range of (2) is the distance interval between the target gate pattern and the target layer, and the distance interval is parameterized. And obtaining the relative position relation between the target grid and the graph cluster. The method specifically comprises the following steps:
the first step, the number of the layers of the target_target_ $n, which are contacted by the grid electrode pattern, is recorded as count_target_ $n, and the number of the layers of the target_($n+1), which are contacted by the grid electrode pattern, is recorded as count_target_skill ($n+1); transferring and binding the parameters to the grid pattern;
second, for n to traverse from 0 to array_size, count_target_should occur for the first time ($n+1)>When 0 and count_target_ $ n=0 (i.e., the target gate pattern first falls wholly or partially into the nth m+1 Group extended distance target graph) is recorded as ntar; string $ array $ ntar]_$array[$ntar+1]Assigning a final output parameter, target_space_region, i.e., a distance interval parameter, to determine a distance range of the gate pattern relative to the target layer based on two adjacent extended distances $ array $ ntar]、$array[$ntar+1]And (5) determining.
Example 2
In terms of the definition of the position relationship, the conventional method can only judge the distance between the vertical direction and the right direction, but cannot judge the relative position of the gate to the specified graphic convex angle/concave angle, and the embodiment provides a method capable of evaluating the relative position of the convex angle/concave angle, which further comprises, based on steps S1 and S2 of the technical scheme of embodiment 1 above:
the extended distance target graph can be divided into a corner, an x side and a y side, the corner is a joint part of the x side and the y side, an outer corner and/or an outer concave corner may exist in the corner according to the form of the graph corresponding to the target etching area, namely, the corner may be a part of the outer corner, the outer concave corner, the x side and the y side, for example, the outer concave corner may not exist, and then the judgment of the outer concave corner position is not needed. The N th m The group extended distance target graph is respectively divided into N-th in x direction and y direction m+1 Group extension distance and N m Expanding the difference of the group expansion distance, subtracting the N m The x-side and the y-side are respectively obtained by the group extension distance target graph; the N th m+1 Subtracting the x side and the y side from a group extended distance target graph to obtain the outer convex angle, wherein the intersection of the x side and the y side is the outer concave angle. The construction method of the outer flange, the outer concave angle, the x side and the y side comprises the following specific steps: for each $array [ $n]（0<The $ n $ array_size), the target_ $ n layer is defined to expand $ array $ n+1 in the x-direction]-$array[$n]The resulting pattern is the target_($n+1) _x_temp layer, with the target_n layer expanding $array [ $n+1 in the y-direction]-$array[$n]The pattern generated later is a target_ ($n+1) _y_temp layer; the target_ ($n+1) _x_temp layer is subtracted from the target_ $n layer to obtain the target_ ($n+1) _x layer (i.e. the x side), and the target_ ($n+1) _y_temp layer is subtracted from the target_ $n layer to obtain the target_ ($n+1) _y layer (i.e. the y side). Defining the intersection of the target_x layer and the target_n+1_y layer as the target_n+1_xy layer (namely, the external concave angle), and defining the intersection of the target_n+1_x layer and the target_n+1_y layer as the target_n+1_x layer and the target_y layer minus the target_n+1_x layer to obtain the target_n+1_corer layer (namely, the external concave angle). Referring to fig. 2 to 5 in combination, as shown in fig. p1_3, p2_3, p3_3, p4_3, four of theseThe target_x layer, the target_($n+1) _y layer, the target_($n+1) _xy layer, and the target_ ($n+1) _core layer in the diagram do not represent graphic areas formed through the same expansion distance, and only represent that four examples adopt the same expansion manner, but specific expansion distances are different.
And recording the number of target layers, outer corners, outer concave corners, x sides and y sides which are contacted with the target grid electrode, namely the target grid electrode pattern falls into all or part of the target layer, the outer corners, the outer concave corners, the x sides and the y sides of the target grid electrode pattern formed after each extended distance is extended. The method specifically comprises the following steps:
parameterizing the number of layers of the gate pattern contact, recording the number of target layers of the gate pattern contact as a count_target, recording the number of target_n+1) _x layers of the gate pattern contact as a count_target_n+1) _x, recording the number of target_n+1) _y layers of the gate pattern contact as a count_target_n+1) _y, recording the number of target_n+1) _xy layers of the gate pattern contact as a count_target_n+1) _xy, and recording the number of target_n_n+1) _xy layers of the gate pattern contact as a count_target_n+1) _xy; the parameters are transferred and bound to the gate pattern to which they belong.
If the target grid electrode graph falls into the extended distance target graph for the first time, and if the target grid electrode graph falls into the outer convex angle, the outer concave angle, the x side or the y side in all or part respectively, the target grid electrode is located at the convex angle position, the concave angle position, the positive x direction position or the positive y direction position of the graph cluster respectively. And obtaining an azimuth relation by judging that the target grid is contacted with the target layer, the outer corner, the outer concave corner, the x side or the y side for the first time, and parameterizing the azimuth relation. The following logic judgment is performed to obtain the azimuth relation: if the contact quantity of the target layer, the outer concave angle, the outer convex angle, the x-side or the y-side is more than 0, the azimuth relation is that the target grid pattern is intersected with the target layer, and the target grid pattern is positioned at the concave angle position, the convex angle position, the positive position in the x direction or the positive position in the y direction of the target layer; otherwise, the target layer adjacent to the target grid pattern is not found in the appointed searching range; wherein, the judgment of the external concave angle is required before the judgment of the x side and the y side. In this embodiment, the determination of the outer flange is required after the determination of the x-side and y-side, and other logic limitations may be used in other embodiments. The specific steps of this embodiment are as follows:
if count_target >0 is satisfied, then target_location=inside, indicating that the gate pattern intersects the target layer;
otherwise, if count_target_($n+1) _xy >0 is satisfied, then target_location=xy, indicating that the gate pattern is located at the reentrant angular position of the target layer;
otherwise, if the count_target_($n+1) _x0 is satisfied, the target_location=x, which indicates that the gate pattern is located at the opposite position of the X direction of the target layer;
otherwise, if the count_target_($n+1) _y0 is satisfied, the target_location=y, which indicates that the gate pattern is located at a position opposite to the Y direction of the target layer;
otherwise, if count_target_ ("n+1) _counter >0 is satisfied, then target_location=core, indicating that the gate pattern is located at the lobe position of the target layer;
otherwise, target_location=na, indicating that a target layer adjacent to the gate pattern is not found within the specified search range; the target_location is a final output parameter, namely an azimuth relation parameter, and the relative position relation between the gate pattern and the target layer is further determined.
Example 3
In terms of definition of the positional relationship, the conventional method only can judge the distance between the vertical direction and the right direction, but cannot judge the relative position between the gate and the convex angle/concave angle of the designated pattern, and the embodiment provides a method capable of simultaneously obtaining the relative position and the relative distance range of the convex angle/concave angle, and further comprises the following steps based on the technical scheme of the embodiment 1:
the extended distance target graph can be divided into a corner, an x side and a y side, the corner is a joint part of the x side and the y side, an outer corner and/or an outer concave corner may exist in the corner according to the form of the graph corresponding to the target etching area, namely, the corner may be a part of the outer corner, the outer concave corner, the x side and the y side, for example, the outer concave corner may not exist, and then the judgment of the outer concave corner position is not needed. The N th m The group extended distance target graph is respectively divided into N-th in x direction and y direction m+1 Group extension distance and N m The difference of the group expansion distance is expanded and subtractedGo to the N m The x-side and the y-side are respectively obtained by the group extension distance target graph; the N th m+1 Subtracting the x side and the y side from a group extended distance target graph to obtain the outer convex angle, wherein the intersection of the x side and the y side is the outer concave angle. The construction method of the outer flange, the outer concave angle, the x side and the y side comprises the following specific steps: for each $array [ $n]（0<The $ n $ array_size), the target_ $ n layer is defined to expand $ array $ n+1 in the x-direction]-$array[$n]The resulting pattern is the target_($n+1) _x_temp layer, with the target_n layer expanding $array [ $n+1 in the y-direction]-$array[$n]The pattern generated later is a target_ ($n+1) _y_temp layer; the target_ ($n+1) _x_temp layer is subtracted from the target_ $n layer to obtain the target_ ($n+1) _x layer (i.e. the x side), and the target_ ($n+1) _y_temp layer is subtracted from the target_ $n layer to obtain the target_ ($n+1) _y layer (i.e. the y side). Defining the intersection of the target_x layer and the target_n+1_y layer as the target_n+1_xy layer (namely, the external concave angle), and defining the intersection of the target_n+1_x layer and the target_n+1_y layer as the target_n+1_x layer and the target_y layer minus the target_n+1_x layer to obtain the target_n+1_corer layer (namely, the external concave angle). Referring to fig. 2 to 5 in combination, as shown in fig. p1_3, p2_3, p3_3, and p4_3, the target_($n+1) _x layer, the target_($n+1) _y layer, the target_($n+1) _xy layer, and the target_($n+1) _core layer in the four drawings do not represent graphic areas formed through the same expansion distance, and only represent that the four examples adopt the same expansion method, but the specific expansion distances are different.
And recording the number of the extended distance target graphs, the target layers, the outer corners, the outer concave corners, the x sides and the y sides, which are contacted with the target grid electrode, namely the extended distance target graphs, the target layers, the outer corners, the outer concave corners and the x sides, which are all or partially fallen into by the target grid electrode, formed after each extended distance is extended. If the target grid electrode graph falls into the extended distance target graph for the first time in whole or in part, N corresponding to the extended distance target graph m To N m+1 The range of (2) is the distance interval between the target gate pattern and the target layer. I.e. traversing the array, the first occurrence of the nth m+1 The contact number of the group extension distance target graph is larger than 0, and the Nth m When the contact number of the group extension distance target graph is equal to 0, corresponding N m To N m+1 The range of (2) is the distance interval between the target gate pattern and the target layer, and the distance interval is parameterized. And obtaining the relative position relation between the target grid and the graph cluster. The method specifically comprises the following steps:
first, parameterizing the number of layers of the gate pattern contact, recording the number of target layers of the gate pattern contact as count_target, recording the number of target_n+1_x layers of the gate pattern contact as count_target_n+1_x, recording the number of target_n+1_y layers of the gate pattern contact as count_target_n+1_y, the number of the target_($n+1) xy layers contacted by the gate pattern is recorded as the count_target_($n+1) xy, the number of the target_ (($n+1) counter layers contacted by the gate pattern is recorded as the count_target_ (($n+1) counter, the number of the target_n layers contacted by the gate pattern is recorded as the count_target_target_$n, and the number of the target_n+1 layers contacted by the gate pattern is recorded as the count_target_target_$n; the parameters are transferred and bound to the gate pattern to which they belong.
Second, for n to traverse from 0 to array_size, count_target_should occur for the first time ($n+1)>When 0 and count_target_ $ n=0 (i.e., the target gate pattern first falls wholly or partially into the nth m+1 Group extended distance target graph) is recorded as ntar; string $ array $ ntar]_$array[$ntar+1]Assigning a final output parameter, target_space_region, i.e., a distance interval parameter, to determine a distance range of the gate pattern relative to the target layer based on two adjacent extended distances $ array $ ntar]、$array[$ntar+1]And (5) determining.
If the target grid electrode graph falls into the extended distance target graph for the first time, and if the target grid electrode graph falls into the outer convex angle, the outer concave angle, the x side or the y side in all or part respectively, the target grid electrode is located at the convex angle position, the concave angle position, the positive x direction position or the positive y direction position of the graph cluster respectively. And obtaining an azimuth relation by judging that the target grid is contacted with the target layer, the outer corner, the outer concave corner, the x side or the y side for the first time, and parameterizing the azimuth relation. The following logic judgment is performed to obtain the azimuth relation: if the contact quantity of the target layer, the outer concave angle, the outer convex angle, the x-side or the y-side is more than 0, the azimuth relation is that the target grid pattern is intersected with the target layer, and the target grid pattern is positioned at the concave angle position, the convex angle position, the positive position in the x direction or the positive position in the y direction of the target layer; otherwise, the target layer adjacent to the target grid pattern is not found in the appointed searching range; wherein, the judgment of the external concave angle is required before the judgment of the x side and the y side. In this embodiment, the determination of the outer flange is required after the determination of the x-side and y-side, and other logic limitations may be used in other embodiments. The specific steps of this embodiment are as follows:
for n=ntar, the following logic judgment is sequentially performed, wherein target_location is a final output parameter, namely an azimuth relation parameter:
if count_target >0 is satisfied, then target_location=inside, indicating that the gate pattern intersects the target layer;
otherwise, if count_target_($n+1) _xy >0 is satisfied, then target_location=xy, indicating that the gate pattern is located at the reentrant angular position of the target layer;
otherwise, if the count_target_($n+1) _x0 is satisfied, the target_location=x, which indicates that the gate pattern is located at the opposite position of the X direction of the target layer;
otherwise, if the count_target_($n+1) _y0 is satisfied, the target_location=y, which indicates that the gate pattern is located at a position opposite to the Y direction of the target layer;
otherwise, if count_target_ ("n+1) _counter >0 is satisfied, then target_location=core, indicating that the gate pattern is located at the lobe position of the target layer;
otherwise, target_location=na, indicating that a target layer adjacent to the gate pattern is not found within the specified search range; the target_location is a final output parameter, namely an azimuth relation parameter, and the relative position relation between the gate pattern and the target layer is further determined.
The method uses a distance interval parameter target_space_region to further limit the position relation, and determines the distance range of the grid electrode graph relative to the target layer. The method has the advantages of high speed, expanding the description definition of the relative position relation between the grid electrode and the target layer, and being capable of more accurately finding or avoiding the defects of the corresponding etching process, wherein the data precision is inversely related to the set breakpoint step length.
In this embodiment, the range algorithm is used to extract the relative position information of the gate and the target layer from the layout, and two parameters, target_location and target_space_region, are used to represent the relative position relationship between the gate and the target layer and the distance interval corresponding to the relative position relationship, respectively, in the search range of [0,4] μm interval.
Four test cases p shown in diagram p_1 (values 1-4) and the output results are shown in table 1 below:
TABLE 1 output results for four test cases
| target_location | target_space_region | |
| p1 | Y | 0.2_0.4 |
| p2 | X | 0.6_0.8 |
| p3 | XY | 2.0_3.0 |
| p4 | CORNER | 1.0_1.5 |
For p1, target_location=y, indicating that the target gate is located at a position opposite to the target layer in the Y direction, and the interval is [0.2,0.4], in μm;
for p2, target_location=x, indicating that the target gate is located at the position opposite to the X direction of the target layer, and the interval is [0.6,0.8], in μm;
for p3, target_location=xy, indicating that the target gate is at the reentrant position of the target layer, and the interval with the nearest reentrant is [2.0,3.0], in μm;
for p4, target_location=core, indicating that the target gate is at the lobe position of the target layer and the spacing interval from the nearest lobe is [1.0,1.5], in μm.
The distances in fig. 2-5 are examples only and are not limited to the length intervals shown in the figures. The embodiment expands the definition of the position relation of the grid electrode relative to the appointed graph cluster, and comprises six position relations of NA/X/Y/XY/CORNER/INSIDE. When the distance range is large, a range algorithm with higher speed is adopted, so that the defects of the prior art are effectively overcome. The position relation of the grid electrode relative to the designated graph cluster is more accurately represented, so that the correlation of the corresponding process defect and the relative grid electrode position relation can be more accurately judged.
In other embodiments, calculating a specific distance value between the target gate pattern and the target layer is also included.
Example 4
The present embodiment provides a computer readable storage medium having stored thereon a computer program which, when executed by a processor, implements the steps of a method for evaluating a relative positional relationship between a target gate and a pattern cluster in a layout as described in any one of embodiments 1 to 3.
The above description of the embodiments is only intended to assist in understanding the method and core idea of the invention. It should be noted that it will be apparent to those skilled in the art that various improvements and modifications can be made to the present invention without departing from the principles of the invention, and such improvements and modifications fall within the scope of the appended claims.
Claims (10)
1. A method for evaluating the relative positional relationship between a target gate and a pattern cluster in a layout, comprising the steps of:
s1, obtaining layout information, finding out all target grid patterns, finding out corresponding patterns of all target etching areas and defining the patterns as target layers;
s2, setting a plurality of expansion distances, and sequentially expanding the target layer in all directions according to the expansion distances to form an expansion distance target graph, wherein the expansion distance target graph is a closed graph of a newly added graph area after expansion according to the expansion distances;
s3, acquiring an extension distance corresponding to the extension distance target graph contacted by the target gate graph for the first time, and acquiring a relative distance range with the target layer as a distance interval between the target gate graph and the target layer according to the acquired extension distance and the previous group of extension distances;
and obtaining the relative position relation between the target grid and the graph cluster.
2. The method of claim 1, wherein the setting a number of extension distances comprises:
setting step length and target interval, forming an array { N { composed of a plurality of expansion distances which are sequentially increased by the breakpoint of the target interval 0, … , N m, N m+1，…NM}，0≤m＜M，0≤Nm ＜N M The method comprises the steps of carrying out a first treatment on the surface of the The N-th in the array m+1 Group extension distance and N m The difference in group expansion distances is greater than or equal to the nth m Group extension distance and N m-1 The difference in group spread distance, at which time m is greater than or equal to 1.
3. The method according to claim 2, wherein for each extended distance target pattern formed after the extension, the number of extended distance target patterns that are in contact with the target gate, i.e., that the target gate pattern falls in whole or in part, is recorded; traversing the array, the first occurrence of the N-th m+1 The contact number of the group extension distance target graph is larger than 0, and the Nth m When the contact number of the group extension distance target graph is equal to 0, the correspondingN m To N m+1 The range of (2) is the distance interval between the target gate pattern and the target layer, and the distance interval is parameterized.
4. The method according to claim 2, wherein the extended distance target pattern is divided into a corner, an x-side and a y-side, the corner is a joint portion of the x-side and the y-side, the extended distance target pattern which is first contacted by the target gate pattern is obtained, and a contact relationship with the corner, the x-side or the y-side is judged, so that a relative relationship that the target gate is located at a corner position, an x-direction facing position or a y-direction facing position of the pattern cluster is obtained.
5. The method of claim 4, wherein the corners are divided into outer corners and outer corners, and the target gate is located at a convex or concave corner position of the pattern cluster when the target gate pattern falls into the extended distance target pattern for the first time if it falls into the outer or outer corners in whole or in part, respectively.
6. The method according to claim 5, wherein the construction method of the x-side, y-side, outer flange and outer concave flange is as follows: setting the front and back two groups of expansion distances as N m And N m+1 N th m The group extended distance target graph is respectively divided into N-th in x direction and y direction m+1 Group extension distance and N m Expanding the difference of the group expansion distance, subtracting the N m The x-side and the y-side are respectively obtained by the group extension distance target graph; nth (N) m+1 Subtracting the x side and the y side from a group extended distance target graph to obtain the outer convex angle, wherein the intersection of the x side and the y side is the outer concave angle.
7. The method according to claim 5, wherein for each extended distance target pattern formed after the extended distance is extended, the number of target layers, outer corners, outer concave corners, x-sides and y-sides that are in contact with the target gate, i.e., into which the target gate pattern falls in whole or in part, is recorded; and obtaining an azimuth relation by judging that the target grid is contacted with the target layer, the outer corner, the outer concave corner, the x side or the y side for the first time, and parameterizing the azimuth relation.
8. The method of claim 7, wherein the following logical determination is made to obtain the bearing relationship: if the contact quantity of the target layer, the outer concave angle, the outer convex angle, the x-side or the y-side is more than 0, the azimuth relation is that the target grid pattern is intersected with the target layer, and the target grid pattern is positioned at the concave angle position, the convex angle position, the positive position in the x direction or the positive position in the y direction of the target layer; otherwise, the target layer adjacent to the target grid pattern is not found in the appointed searching range; wherein, the judgment of the external concave angle is required before the judgment of the x side and the y side.
9. The method of claim 1, further comprising calculating a specific distance value between the target gate pattern and the target layer.
10. A computer readable storage medium having stored thereon a computer program, which when executed by a processor, implements the steps of a method for evaluating the relative positional relationship of a target gate and a pattern cluster in a layout according to any of claims 1-9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311657077.1A CN117371395B (en) | 2023-12-06 | 2023-12-06 | Method for evaluating relative position relation between target grid and graph cluster in layout |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311657077.1A CN117371395B (en) | 2023-12-06 | 2023-12-06 | Method for evaluating relative position relation between target grid and graph cluster in layout |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN117371395A true CN117371395A (en) | 2024-01-09 |
| CN117371395B CN117371395B (en) | 2024-02-02 |
Family
ID=89391346
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311657077.1A Active CN117371395B (en) | 2023-12-06 | 2023-12-06 | Method for evaluating relative position relation between target grid and graph cluster in layout |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117371395B (en) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4300357A1 (en) * | 1992-01-18 | 1993-07-22 | Mitsubishi Electric Corp | Semiconductor device of DRAM structure - comprising substrate, impurity regions formed on substrate, and conducting layers |
| US20010034877A1 (en) * | 2000-04-19 | 2001-10-25 | Keiichiro Tounai | Photomask pattern shape correction method and corrected photomask |
| US20110065588A1 (en) * | 2005-03-04 | 2011-03-17 | Xing Su | Sensor arrays and nucleic acid sequencing applications |
| CN203288598U (en) * | 2012-11-19 | 2013-11-13 | 宁波比亚迪半导体有限公司 | Trench type MOSFET provided with terminal voltage-resistant structure |
| CN103824883A (en) * | 2012-11-19 | 2014-05-28 | 比亚迪股份有限公司 | Groove MOSFET with terminal voltage-withstanding structure and manufacturing method of groove MOSFET |
| DE102020111378A1 (en) * | 2020-04-15 | 2021-10-21 | Taiwan Semiconductor Manufacturing Co. Ltd. | REDUCED RC DELAY IN SEMICONDUCTOR DEVICES |
| CN114764852A (en) * | 2020-12-30 | 2022-07-19 | 杭州广立微电子股份有限公司 | Method for identifying M0 graphic clusters continuously arranged on grid |
| WO2023015664A1 (en) * | 2021-08-13 | 2023-02-16 | 长鑫存储技术有限公司 | Dummy pattern filling method and semiconductor device layout |
| DE102023101602A1 (en) * | 2022-03-03 | 2023-09-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | METAL GATE STRUCTURE AND METHOD OF PRODUCTION THEREOF |
-
2023
- 2023-12-06 CN CN202311657077.1A patent/CN117371395B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4300357A1 (en) * | 1992-01-18 | 1993-07-22 | Mitsubishi Electric Corp | Semiconductor device of DRAM structure - comprising substrate, impurity regions formed on substrate, and conducting layers |
| US20010034877A1 (en) * | 2000-04-19 | 2001-10-25 | Keiichiro Tounai | Photomask pattern shape correction method and corrected photomask |
| US20110065588A1 (en) * | 2005-03-04 | 2011-03-17 | Xing Su | Sensor arrays and nucleic acid sequencing applications |
| CN203288598U (en) * | 2012-11-19 | 2013-11-13 | 宁波比亚迪半导体有限公司 | Trench type MOSFET provided with terminal voltage-resistant structure |
| CN103824883A (en) * | 2012-11-19 | 2014-05-28 | 比亚迪股份有限公司 | Groove MOSFET with terminal voltage-withstanding structure and manufacturing method of groove MOSFET |
| DE102020111378A1 (en) * | 2020-04-15 | 2021-10-21 | Taiwan Semiconductor Manufacturing Co. Ltd. | REDUCED RC DELAY IN SEMICONDUCTOR DEVICES |
| CN114764852A (en) * | 2020-12-30 | 2022-07-19 | 杭州广立微电子股份有限公司 | Method for identifying M0 graphic clusters continuously arranged on grid |
| WO2023015664A1 (en) * | 2021-08-13 | 2023-02-16 | 长鑫存储技术有限公司 | Dummy pattern filling method and semiconductor device layout |
| DE102023101602A1 (en) * | 2022-03-03 | 2023-09-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | METAL GATE STRUCTURE AND METHOD OF PRODUCTION THEREOF |
Non-Patent Citations (1)
| Title |
|---|
| 陈辉;杜金瑞;韩崇昭;: "自适应不规则形状扩展目标跟踪算法", 控制理论与应用, no. 08 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN117371395B (en) | 2024-02-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6901150B2 (en) | Integrated circuit design system and method | |
| US6066179A (en) | Property estimation of an integrated circuit | |
| US20040049722A1 (en) | Failure analysis system, failure analysis method, a computer program product and a manufacturing method for a semiconductor device | |
| US20020144219A1 (en) | Scaleable approach to extracting bridges from a hierarchically described VLSI layout | |
| CN110689569A (en) | Integrated circuit layout field identification and grid subdivision processing method and device | |
| CN112132973B (en) | Method and device for quickly generating three-dimensional integrated circuit electromagnetic simulation full three-dimensional grid | |
| CN111898331A (en) | Random dynamic allocation method for frequency domain simulation calculation tasks of very large scale integrated circuit | |
| US7392496B1 (en) | Device for avoiding timing violations resulting from process defects in a backfilled metal layer of an integrated circuit | |
| CN111243094B (en) | Three-dimensional model accurate voxelization method based on lighting method | |
| US7735043B2 (en) | Wiring layout apparatus, wiring layout method, and wiring layout program for semiconductor integrated circuit | |
| TWI537760B (en) | Integrated circuit design and fabrication method | |
| Simmons et al. | A state-of-the-art hotspot recognition system for full chip verification with lithographic simulation | |
| Papadopoulou | The Hausdorff Voronoi diagram of point clusters in the plane | |
| CN117371395B (en) | Method for evaluating relative position relation between target grid and graph cluster in layout | |
| CN115437210A (en) | Optical proximity correction method and device for dense pattern and electronic equipment | |
| JP2006019690A (en) | Pattern analysis method, pattern analysis apparatus, yield calculation method and yield calculation apparatus | |
| TWI460680B (en) | Data clustering method based on density | |
| CN114442438B (en) | Core particle arrangement optimizing algorithm for variable grids | |
| CN112149336B (en) | Method and device for quickly generating three-dimensional integrated circuit electromagnetic simulation high-quality grid | |
| CN117371394B (en) | Method for evaluating position relation between target grid and graph cluster in layout | |
| CN112800716A (en) | Method for detecting open circuit of wire net in wiring of integrated circuit layout | |
| US9015645B1 (en) | Hierarchical electromigration analysis using intelligent connectivity | |
| Barnett et al. | Yield-reliability modeling: experimental verification and application to burn-in reduction | |
| Zheng et al. | Lay-Net: Grafting Netlist Knowledge on Layout-Based Congestion Prediction | |
| Hamamura et al. | Repair yield simulation with iterative critical area analysis for different types of failure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |