CN117369730B - Memory and control method thereof - Google Patents
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- CN117369730B CN117369730B CN202311668026.9A CN202311668026A CN117369730B CN 117369730 B CN117369730 B CN 117369730B CN 202311668026 A CN202311668026 A CN 202311668026A CN 117369730 B CN117369730 B CN 117369730B
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 102
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Classifications
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- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
- G06F3/0614—Improving the reliability of storage systems
- G06F3/0616—Improving the reliability of storage systems in relation to life time, e.g. increasing Mean Time Between Failures [MTBF]
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- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
- G06F3/061—Improving I/O performance
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- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
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- G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
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Abstract
The invention provides a memory and a control method thereof, comprising the following steps: a flash memory chip including a plurality of memory cells; the temperature sensor is connected with the storage unit to acquire temperature data of the storage unit; the temperature recording unit is used for receiving temperature data at intervals of preset time; the coefficient conversion unit is electrically connected with the temperature recording unit, and the coefficient conversion unit stores conversion coefficients and the calibration coefficients of the current round, wherein the conversion coefficients are related to temperature data, and the calibration coefficients of the current round are the sum of the conversion coefficients and the calibration coefficients of the previous round; the scanning unit is electrically connected with the scanning judging unit, and when the calibration coefficient of the round is larger than or equal to the scanning threshold value and the storage unit is in an idle state, the scanning unit is started and scans the storage unit; when the calibration coefficient of the current round is greater than or equal to the scanning threshold value, and when the storage unit is in a busy state, the scanning unit is started after the storage unit is switched to an idle state or after the busy state of the storage unit is interrupted.
Description
Technical Field
The invention relates to the technical field of storage, in particular to a memory and a control method thereof.
Background
Flash memory is a form of electronically erasable programmable read-only memory, which allows memory to be erased or written multiple times during operation, simply referred to as flash memory. The flash memory realizes data writing through voltage and has higher shock resistance and reliability. The flash memory is not electrified for a long time, and stored data in the flash memory may be lost due to electronic escape. Thus, flash memory or applications to flash-related memory devices, data retention capability can directly impact memory performance and lifetime.
In addition, in the process of reading and writing the flash memory, adjacent physical pages are easy to interfere with each other, so that written data are wrong, and when the wrong data exceed the error correction capability of the flash memory device, the information security of a user and the service life of the flash memory can be influenced.
Disclosure of Invention
The invention aims to provide a memory and a control method thereof, which are used for improving the data retention capacity of the memory, thereby improving the reliability and the service life of the memory.
In order to solve the technical problems, the invention is realized by the following technical scheme:
the present invention provides a memory comprising:
a flash memory chip including a plurality of memory cells;
The temperature sensor is connected with the storage unit to acquire temperature data of the storage unit;
a temperature recording unit, which is used for receiving the temperature data at intervals of preset time;
the coefficient conversion unit is electrically connected with the temperature recording unit, and the coefficient conversion unit stores conversion coefficients and calibration coefficients of the current round, wherein the conversion coefficients are related to the temperature data, and the calibration coefficients of the current round are the sum of the conversion coefficients and the calibration coefficients of the previous round; and
the scanning unit is started and scans the storage unit when the calibration coefficient of the round is larger than or equal to a scanning threshold value and the storage unit is in an idle state;
and when the calibration coefficient of the current round is larger than or equal to a scanning threshold value and the storage unit is in a busy state, starting the scanning unit after the storage unit is converted into an idle state or after the busy state of the storage unit is interrupted.
In an embodiment of the invention, the memory includes a timing unit, the timing unit is electrically connected to the temperature sensor and the temperature recording unit, wherein a timing start node of the timing unit is a measurement time node of the temperature sensor in a previous round, and when a timing time of the timing unit reaches the preset time, the timing time of the timing unit is cleared.
In one embodiment of the present invention, a portion of the memory cells are divided into critical memory cells, the calibration coefficient of the critical memory cells is less than the scan threshold, and the calibration coefficient of the critical memory cells is greater than 70% of the scan threshold.
In an embodiment of the present invention, the critical temperature is stored in the scanning unit, and in a timing period of the timing unit, the calibration coefficient of the critical storage unit is greater than 70% of the scanning threshold when the first temperature data of the temperature recording unit is greater than or equal to the critical temperature, and the calibration coefficient of the critical storage unit is greater than 90% of the scanning threshold when the first temperature data of the temperature recording unit is less than the critical temperature.
In an embodiment of the present invention, the coefficient conversion unit stores a conversion reference table, and the conversion reference table records a correspondence between the temperature data and the conversion coefficient.
In an embodiment of the present invention, the coefficient conversion unit stores a correspondence between temperature data and the conversion coefficient, where the correspondence between temperature data and the conversion coefficient is according to the following formula:
Temperature data = T L +nT 0 Conversion coefficient=d+nc;
wherein T is L Minimum ambient temperature, T, for the memory to operate 0 And d is the transformation coefficient of the memory at the lowest ambient temperature, c is the preset transformation coefficient gradient, and n is the gradient progression of the current temperature data.
In an embodiment of the present invention, the memory includes a scan determination unit, where the scan determination unit is electrically connected to the coefficient conversion unit to receive the calibration coefficient of the present wheel, the scan threshold is stored in the scan determination unit, and when the calibration coefficient of the present wheel is greater than or equal to the scan threshold, the scan determination unit sets a scan flag in the memory.
The invention provides a memory control method, which is based on the memory and comprises the following steps:
acquiring temperature data of a storage unit in a memory at intervals of preset time;
obtaining a conversion coefficient of the temperature data, and obtaining the sum of the conversion coefficient and the calibration coefficient of the previous round as the calibration coefficient of the current round;
setting a scanning threshold, and scanning the storage unit when the calibration coefficient is larger than or equal to the scanning threshold and the storage unit is in an idle state; and
When the calibration coefficient of the current round is larger than or equal to a scanning threshold value, and when the storage unit is in a busy state, the storage unit is waited to be turned into an idle state or the busy state of the storage unit is interrupted while the temperature data is continuously acquired, so that the scanning process of the storage unit is started.
In an embodiment of the present invention, when the calibration coefficient is greater than or equal to the scan threshold, a scan flag is set in the memory.
In an embodiment of the present invention, the memory unit is in a read-write process, and the method for controlling the memory includes the following steps:
when the scanning unit detects the scanning mark, interrupting the reading and writing process of the storage unit, and executing the scanning process of the storage unit;
after the scanning process is finished, the scanning mark of the storage unit is cleared; and
and continuing the reading and writing process of the storage unit.
As described above, the present invention provides a memory and a control method thereof, which can ensure a data storage voltage of a memory cell by continuously scanning the memory cell, thereby improving a data retention capability of the memory cell. According to the memory and the control method thereof provided by the invention, the scanning frequency of the memory unit can be automatically adjusted according to the temperature of the memory unit, the data retention capacity of the memory unit is improved, and meanwhile, the phenomenon of reading interference of the flash memory caused by too frequent scanning is avoided. The memory and the control method thereof can avoid the generation of redundancy of scanning task accumulation and scanning related parameters in the memory, and support the continuous updating of the scanning parameters of the control method within the service life of the memory, thereby not only having high implementation stability, but also improving the scanning efficiency and the service life of the memory.
Of course, it is not necessary for any one product to practice the invention to achieve all of the advantages set forth above at the same time.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed for the description of the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a memory according to an embodiment of the invention.
Fig. 2 is a schematic diagram of a flash memory chip according to an embodiment of the invention.
Fig. 3 is a schematic structural diagram of a main control chip according to an embodiment of the invention.
Fig. 4 is a schematic diagram illustrating the setting of the preset time and the temperature measurement time point according to an embodiment of the invention.
Fig. 5 is a flowchart illustrating steps S10 to S40 according to an embodiment of the invention.
Fig. 6 is a flow chart of steps S11 to S13, and steps S21 to S24 according to an embodiment of the invention.
Fig. 7 is a flowchart of steps S31 to S35 according to an embodiment of the invention.
Table 1 shows the scan parameters obtained in the memory function test according to the control method of the memory provided by the present invention.
In the figure: 10. a memory; 20. a flash memory chip; 201. a storage module; 202. a storage block; 203. storing pages; 30. a main control chip; 301. a timing unit; 302. a temperature recording unit; 303. a coefficient conversion unit; 304. a scanning judgment unit; 305. a scanning unit; 306. a data clearing unit; 40. a temperature sensor.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 1 and 2, the storage medium of the memory provided by the present invention is a flash memory, and specifically is NAND flash memory particles. The memory may be SM flash memory Card, CF Card, multimedia Card (MMC), secure digital Card (Secure Digital Card, SD Card), memory stick and micro hard disk, and universal flash memory (Universal Flash Storage, UFS), etc. In the present invention, the memory 10 includes a flash memory chip 20 and a main control chip 30, and a temperature sensor 40. Wherein the flash memory chip 20 comprises a plurality of memory modules 201. In this embodiment, the memory module 201 is a NAND flash memory granule. Wherein the memory module 201 comprises a plurality of memory blocks 202. In this embodiment, the memory block 202 is a physical block (block) of a flash memory, where the memory block 202 has a unique device number, and the plurality of memory blocks 202 may be ordered in the order of the device numbers. Wherein the memory block 202 comprises a plurality of memory pages 203. In this embodiment, the memory page 203 is a physical page (page) of the flash memory. Wherein the memory pages 203 have unique device numbers and the plurality of memory pages 203 may be ordered in the order of device numbers. The main control chip 30 is electrically connected with the flash memory chip 20, and transmits data to the flash memory chip 20 or transmits instructions to the flash memory chip 20. In this embodiment, the hardware of the main control chip 30 includes a microprocessor, a host interface controller, a buffer, a flash memory controller, an error correction module, and the like. The microprocessor is a reduced instruction system computer (Reduced Instruction System Computer, RISC), and in particular an ARM processor. The host interface controller is used for connecting the main control chip 30 and the host. The buffer controller is used for controlling data reading, writing and editing of the buffer area in the memory 10. Buffers may be used to store portions of instructions and data. The flash memory controller is electrically connected to the flash memory chip 20 and is used for controlling the data read-write editing or control process of the flash memory chip 20. The error correction module may correct the read and write data of the flash memory chip 20 based on a low density parity Code (Low Density Parity-Check Code, LDPC).
Referring to fig. 1 and 2, in the present invention, there are a plurality of temperature sensors 40. In the present embodiment, the temperature sensor 40 is identical in number to the memory blocks 202, and the temperature sensor 40 is connected to the memory blocks 202 to monitor the temperature data of each memory block 202. In another embodiment of the present invention, the temperature sensor 40 is consistent with the number of memory modules 201, and the temperature sensor 40 is connected with the memory modules 201 to monitor temperature data of each memory module 201. In yet another embodiment of the present invention, the temperature sensor 40 is consistent with the number of memory pages 203, and the temperature sensor 40 is connected to the memory pages 203 to monitor the temperature data of each memory page 203. The temperature data obtained by the monitoring of the temperature sensor 40 can be transmitted to the main control chip 30 through an interface and a wire harness transmission or a wiring structure. According to the received temperature data, the main control chip 30 regulates the control process of the flash memory chip 20.
Referring to fig. 1 to fig. 4, in an embodiment of the invention, the main control chip 30 includes a timing unit 301, a temperature recording unit 302, a coefficient conversion unit 303, a scan judging unit 304, a scan unit 305, and a data clearing unit 306. Wherein the timing unit 301 performs timing according to the temperature measurement time node a. In the present embodiment, the temperature measurement time node a is a time point at which the temperature recording unit 302 records temperature data or a time point at which the temperature sensor 40 measures the temperature of the memory unit. In the present embodiment, the timer unit 301 includes a preset time t. The present invention is not limited to a specific numerical range of the preset time t, and in this embodiment, the preset time t is, for example, 1h to 2h. Wherein the temperature recording unit 302 is used for recording temperature data of the temperature sensor. Specifically, the timing unit 301 is electrically connected to the temperature sensor 40, and the temperature recording unit 302 is electrically connected to the temperature sensor 40 and the timing unit 301. From the temperature measurement time node a, after the timing time of the timing unit 301 reaches the preset time t, the main control chip 30 activates control commands to the temperature sensor 40 and the temperature recording unit 302 so that the temperature sensor 40 measures the temperature of the storage unit, and the temperature recording unit 302 acquires temperature data from the temperature sensor 40 and records. In this embodiment, the timing unit 301 is a timer. The temperature recording unit 302 includes a plurality of data registers.
Referring to fig. 1 to 4, in an embodiment of the invention, a coefficient conversion unit 303 is electrically connected to the temperature recording unit 302, and is used for obtaining a conversion coefficient corresponding to the temperature data. The conversion coefficient is an unstable coefficient, and the corresponding conversion coefficient can be determined according to the value of the temperature data. In this embodiment, the conversion coefficient may be preset according to the temperature gradient. Specifically, the temperature gradient is T 0 The conversion gradient is c. The operating ambient temperature of the memory 10 is, for example, T L ~T H 。T L T is the minimum temperature of the operating environment of the memory 10 H Is the highest temperature of the operating environment of the memory 10. In the present embodiment, T is L The corresponding conversion factor is set to e.g. d. Wherein, when the temperature data is T L +nT 0 At this time, the conversion coefficient is d+nc. In this embodiment, n is the number of gradient stages in which the current measured temperature is located. Specifically, the temperature T is measured L ~T L +T 0 For the first stage, the corresponding value of n is 1. Measuring temperature T L +T 0 ~T L +2T 0 For the second stage, the corresponding value of n is 2, and so on. In this embodiment, the temperature gradient is set to, for example, 1/50 to 1/20 of the maximum difference of the operating condition ambient temperatures. For example, the operating environment temperature of the memory 10 is-40 ℃ to 110 ℃. The preset temperature gradient is 5℃and the preset conversion gradient is, for example, 1. Wherein the conversion coefficient corresponding to-40 to-35 ℃ is 1. The conversion coefficient at-35℃was not 1. And the conversion coefficient corresponding to minus 35 ℃ to minus 30 ℃ is 2. The conversion coefficient at-30℃was not 2. And the conversion coefficient corresponding to minus 30 ℃ to minus 25 ℃ is 3. The conversion coefficient at-25℃was not 3. And so on, up to 110℃the conversion factor corresponding to 110℃is 31. Through coefficient conversion, the running speed of temperature judgment can be increased, and the accuracy of temperature judgment is improved. The coefficient conversion unit 303 acquires the whole of the temperature recording unit 302. The function of the coefficient conversion unit 303 can be realized by Firmware in the host chip 30.
Referring to fig. 1 to fig. 4, in an embodiment of the invention, the scan determining unit 304 is electrically connected to the coefficient converting unit 303. The coefficient conversion unit 303 sends the obtained conversion coefficient to the scan judgment unit 304. The scan judgment unit 304 includes a summer and judgment firmware. The accumulator is used for accumulating the conversion coefficients to obtain calibration coefficients. At every preset time t, the temperature recording unit 302 obtains a temperature data, and then the coefficient conversion unit 303 obtains a conversion coefficient corresponding to the temperature data. The scan determination unit 304 then sums the newly obtained conversion coefficient and the previous calibration coefficient to obtain a sum of conversion coefficients as a new calibration coefficient. In this embodiment, the scan determination unit 304 includes a scan threshold value, which is a value of the beam calibration coefficient. When the calibration factor reaches the scan threshold, the scan unit 305 is started. Specifically, the scan unit 305 may be started by comparing the scan threshold with the calibration coefficient by the determination firmware, and sending a start command to the scan determination unit 304 when the calibration coefficient reaches the scan threshold.
Referring to fig. 1 to 4, in an embodiment of the present invention, the start condition of the scan unit 305 includes receiving a start command of the scan determining unit 304, and the memory 10 is in an idle state. In this embodiment, the memory 10 includes a sleep mode, an operation mode, and an idle mode. When the main control chip 30 receives a host command or a main control command, the memory 10 enters a working mode, and responds and processes the host command or the main control command. If the memory 10 is powered up and the host does not send host instructions to the host chip 30, the memory 10 is in idle mode or sleep mode. Specifically, when each region of the main control chip 30 is in a state of being activated and not being called, the memory 10 is in an idle mode. When the partial area of the main control chip 30 is not started, the memory 10 is in the sleep mode. In the present embodiment, when the corresponding memory unit in the flash memory chip 20 is not executing the corresponding host command or the master command, and the master chip 30 is in the idle mode, the memory 10 is in the idle state. The memory 10 is now provided with the capability to perform a scanning process.
Referring to fig. 1 to 4, in the present invention, the memory cells are read and error corrected during the scanning process. In the present invention, the memory units may be a memory module 201, a memory block 202, and a memory page 203. When the memory unit is the memory module 201, the scanning process may be to sequentially read the plurality of memory blocks 202 in the memory module 201. And in the process of sequential reading, errors occur in the data, and the error correction module corrects the read data so as to improve the data retention capacity of the memory 10. When the memory cell is a memory block 202, the scanning process may be to sequentially read a plurality of memory pages 203 in the memory block 202. By reading the corresponding memory page 203, data storage errors due to long-time non-use are avoided, and the error correction pressure of the error correction module can be reduced, and part of the memory blocks 202 are prevented from being judged as bad blocks, thereby prolonging the service life of the memory 10. In this embodiment, when the calibration factor reaches the scan threshold, a scan flag is set in the memory 10. Wherein the scan flag is a global variable. When the scanning process is interrupted, the scanning process may continue by asserting the scan flag and when the memory 10 returns to the idle state.
Referring to fig. 1 to fig. 4, in an embodiment of the invention, the data clearing unit 306 is electrically connected to the timing unit 301, the temperature recording unit 302, the coefficient conversion unit 303 and the scan determining unit 304. The data clearing unit 306 may be clearing firmware in the main control chip 30. When the counted time of the counting unit 301 reaches the preset time t, the data clearing unit 306 clears the counted time of the counting unit 301, and then the counting unit 301 counts again. When the calibration coefficient reaches the scan threshold, the data clearing unit 306 clears the temperature data in the temperature recording unit 302, the conversion coefficient in the coefficient conversion unit 303, and the calibration coefficient in the scan judgment unit 304. In another embodiment of the present invention, after the conversion coefficient corresponding to the temperature data is obtained, the corresponding temperature data may be cleared by the data clearing unit 306, so as to reduce the occupied space of the temperature data.
Referring to fig. 1 to 5, the present invention provides a control method of a memory 10The control method of the memory 10 includes steps S10 to S40. In step S10, temperature data of memory cells in the memory 10 are acquired at intervals of a preset time t. Wherein the temperature data of the storage unit is acquired by the temperature sensor 40 and is clocked by the clocking unit 301 to acquire a clocked time after the temperature measuring time node. In one embodiment of the present invention, the temperature sensor 40 is mounted on the memory module 201 or on the memory 10. The temperature data obtained by the temperature sensor 40 is temperature data of the entire memory module 201 or the entire memory 10. And, according to the timing time of the timer 301, when the timing time of the timer 301 reaches the preset time, the temperature sensor 40 measures the temperature value of the memory module 201 or the memory 10 and transmits the temperature value to the temperature recording unit 302. For example, as shown in FIG. 4, at a first temperature measurement time node, the temperature sensor 40 obtains temperature data T 1 . And obtaining temperature data T on the second temperature measurement time node, the third temperature measurement time node, the fourth temperature measurement time node and the fifth temperature measurement time node respectively 2 Temperature data T 3 Temperature data T 4 And temperature data T 5 . In the present embodiment, in step S10, the temperature data T 1 To temperature data T 5 For example 5 ℃, for example 10 ℃, for example 30 ℃, for example 45 ℃ and for example 50 ℃, respectively. In an embodiment of the present invention, at the temperature measurement time node a, the temperature data obtained by the temperature sensor 40 is single data, so as to improve the efficiency of temperature measurement.
Referring to fig. 1 to 5, in another embodiment of the invention, there are a plurality of temperature sensors 40, and the plurality of temperature sensors 40 are connected to different memory blocks 202. At the temperature measurement time node a, each temperature sensor 40 acquires temperature data of the corresponding memory block 202, respectively. Therefore, in the present embodiment, at the temperature measurement time node a, the temperature sensor 40 obtains a plurality of temperature data, each of which is independent data. In the present embodiment, the conversion coefficient and the calibration coefficient are calculated in units of the memory block 202. And the scanning process is also in units of memory blocks 202. In the present embodiment, step S10 includes steps S11 to S13.
Step S11, determining whether the timing time of the timing unit 301 reaches the preset time.
In step S12, when the timing time of the timing unit 301 reaches the preset time, the temperature data of the storage unit is acquired, and the temperature data is stored in the temperature recording unit 302.
Step S13, the timing time of the timing unit is cleared, and the step S11 is returned.
Referring to fig. 1 to 6, in the present invention, in step S20, a conversion coefficient of temperature data is obtained, and a sum of the conversion coefficient and a front-wheel calibration coefficient is obtained as a current-wheel calibration coefficient. Wherein the temperature data has a corresponding conversion coefficient. In this embodiment, the conversion coefficient corresponding to each temperature range may be preset according to the temperature gradient and the conversion coefficient gradient. The smaller the temperature gradient is, the more accurate the obtained calibration coefficient is, and the accuracy of selecting the scanning time can be improved. Taking the working condition environment temperature range of-40 ℃ to 110 ℃ and the temperature gradient of 5 ℃ as examples and the transformation coefficient gradient of 1 as examples, the temperature data T 1 To temperature data T 5 The corresponding conversion coefficients are, for example, 10, 11, 15, 18 and 19, respectively. After step S12, step S20 is performed. Wherein step S20 includes steps S21 to S24.
And S21, acquiring a conversion coefficient of the temperature data.
And S22, acquiring the calibration coefficient of the previous round.
Step S23, the sum of the conversion coefficient and the calibration coefficient of the previous round is obtained and used as the calibration coefficient of the current round, and the calibration coefficient of the current round is stored in the scanning judgment unit 304.
Step S24, the temperature data in the temperature recording unit 302 is cleared.
Referring to fig. 1 to 6, in step S11, the timing unit 301 starts timing from the previous temperature measurement node, sets a new temperature measurement node when the timing time reaches the preset time t, and performs step S12. In step S12, temperature data of the memory cell is acquired. In an embodiment of the present invention, when the memory unit is the memory module 201 or the memory 10, temperature data of the memory module 201 or the memory 10 is obtained, wherein the temperature data is single data. In another embodiment of the present invention, when the storage unit is the storage block 202, at the temperature measurement node, the temperature recording unit 302 simultaneously obtains the temperature data measured by the plurality of temperature sensors 40, where each temperature data corresponds to a real-time temperature value of one storage block 202. In the technical solution provided in the present invention, the memory unit may also refer to the memory page 203. At the time of the temperature measurement node, the temperature recording unit 302 acquires the real-time temperature values of the plurality of memory pages 203 at the same time. After step S12, step S13 may be performed first, or step S21 may be performed first. In step S13, the timing time of the timing unit 301 is cleared by the data clearing unit 306. In step S21, a conversion coefficient of the temperature data is acquired.
Referring to fig. 1 to 6, in the present invention, before executing steps S10 to S40, a correspondence relationship between conversion coefficients and temperature data may be preset. For example, a conversion table of conversion coefficients and temperature data is set, and after the temperature data is obtained, the temperature data is retrieved from the conversion table, and the conversion coefficient corresponding to the temperature data is obtained. Specifically, according to the temperature gradient T 0 Obtaining the temperature T L ~T H The corresponding conversion coefficients are juxtaposed into a conversion comparison table. Wherein the conversion look-up table is stored in the coefficient conversion unit 303. For another example, a conversion function of the temperature data and the conversion coefficient is set. Specifically, when the temperature data is T L +nT 0 At this time, the conversion coefficient is d+nc. Wherein T is L Is the lowest temperature of the working condition environment of the memory 10, n is the gradient series where the current measured temperature is located, T 0 Is a temperature gradient, d is T L And c is the conversion coefficient gradient. In step S21, a conversion coefficient corresponding to the temperature data is acquired. In step S22 and step S23, the scan judging unit 304 obtains the conversion coefficient of the storage unit from the coefficient converting unit 303, and integrates the conversion coefficient with the calibration coefficient of the previous round to obtain the calibration coefficient of the present round. Wherein the calibration coefficients of the present round will be stored in the scan judgment unit 304 over the calibration coefficients of the previous round. Then execute Step S24 is performed to clear the temperature data in the temperature recording unit 302. It should be noted that, the interval of the preset time is much longer than the execution time of step S21 to step S24, so that a false deletion event of the temperature data does not occur. It should be noted that, after step S12, steps S21 to S24 may be directly performed, and step S13 may be further performed to avoid redundancy of data and reduce performance dependency on the memory 10. After step S12, step S13 may be performed first, and then steps S21 to S24 may be performed, so that the timer unit 301 can normally perform the timer operation when steps S21 to S24 are performed, thereby reducing the waiting time of the timer unit 301.
Referring to fig. 1 to 7, the control method of the memory 10 provided by the present invention includes step S30, wherein step S30 is performed after step S24 is completed. In step S30, a scan threshold is set, and when the calibration coefficient reaches the scan threshold and when the memory cell is in an idle state, the memory cell is scanned. The setting of the scan threshold may be performed in step S30 or may be performed before steps S10 to S40. In this embodiment, the scan threshold is a numerical value and is used to limit the upper numerical limit of the calibration coefficient. In this embodiment, the scan threshold may be a rated value or may be changed during use of the memory 10. For example, when the service life of the memory 10 exceeds 3 years, the scan threshold is lowered to increase the frequency of scanning, thereby securing the user data of the memory 10. It should be noted that 3 years is a numerical value for the present invention for example, and this term may be changed according to the product itself according to the memory 10 used. In the present embodiment, step S30 includes steps S31 to S36.
Step S31, setting a scanning threshold.
And S32, obtaining the calibration coefficient of the round.
And step S33, judging whether the calibration coefficient is larger than or equal to the scanning threshold value, and returning to the step S11 when the calibration coefficient is smaller than the scanning threshold value.
And step S34, when the calibration coefficient is greater than or equal to the scanning threshold value, setting up a scanning mark.
Step S35, when the memory is in an idle state, a scanning process of the memory unit is started.
Step S36, after the scanning process of the storage unit is finished, the scanning mark is cleared.
Referring to fig. 1 to 7, in step S31, a scan threshold is set in an embodiment of the present invention. Under the condition that the value of the scanning threshold value is unchanged, the preset scanning threshold value is used. If the scan threshold value has changed, in step S31, a new scan threshold value is input to the scan determination unit 304. In step S32, the scan judging unit 304 acquires the calibration coefficient of the present round from the coefficient converting unit 303. And in step S33, the scan determining unit 304 compares the scan threshold value with the calibration coefficient of the present round. When the calibration coefficient of the present round is greater than or equal to the scan threshold, step S34 is executed. And when the calibration coefficient of the current round is smaller than the scanning threshold value, returning to the step S11, waiting for the timing time to reach the preset time, obtaining new temperature data and conversion coefficient again, and updating the calibration coefficient of the current round. In step S34, when the calibration coefficient is equal to or greater than the scan threshold, the scan flag is set. The scanning mark is a global variable and is used for determining whether the storage unit reaches the scanning condition. Wherein when the memory 10 is in the idle state, in case it is determined that the scanning flag has been set, step S35 may be performed to start the scanning process for the memory cell. In step S36, after the scanning process of the storage unit is finished, the scanning flag corresponding to the storage unit is cleared. In this embodiment, after the scan flag is set, the calibration coefficients of the corresponding memory cells are cleared. When the scanning process of the memory unit is busy in the memory 10, step S40 is performed.
Referring to fig. 1 to 7, in an embodiment of the invention, the memory unit may be the memory module 201 or the whole flash memory chip 20, and the scan flag is set to indicate that the whole memory module 201 or the whole flash memory chip 20 is scanned when the memory 10 is in the idle state. Specifically, if the storage unit is the storage module 201, the storage blocks 202 in the storage module 201 are scanned sequentially during the scanning process. When a memory cell refers to the flash memory chip 20, the memory modules 201 in the flash memory chip 20 are sequentially scanned, and when each memory module 201 is scanned, the memory blocks 202 in the memory module 201 are sequentially scanned. In another embodiment of the present invention, the memory cells are memory blocks 202. Multiple scan flags may be set simultaneously in memory 10, each corresponding to a different memory block 202. When a plurality of scan markers are provided at the same time, the time from setting the scan markers can be acquired, and the memory block 202 is scanned in the order from old to new, so that it is ensured that the temperature data of the memory block 202 does not change excessively when the scanning is completed. Scanning can also be performed according to the serial number sequence of the storage block 202 corresponding to the scanning mark, so as to avoid missing in the scanning process.
Referring to fig. 1 to 7, in step S40, when the calibration coefficient reaches the scan threshold and the memory unit is in a busy state, the memory unit is waited to be turned into an idle state or the busy state of the memory unit is interrupted while continuing to acquire the temperature data, so as to start the scanning process of the memory unit. After step S34, after the scan flag is set, if the memory 10 is in a busy state, that is, the memory 10 is in an operating mode. The present invention is not limited to the contents of operation of memory 10 in the operational mode. When the memory 10 returns to the idle mode, the memory 10 is considered to return to the idle state, and at this time, in step S40, it is detected whether the scan flag is present, and if the scan flag is set, the corresponding memory cell is tested. It should be noted that the scanning process of each memory block 202 is independent.
Referring to fig. 1 to 7, in another embodiment of the present invention, in step S40, when the calibration coefficient reaches the scan threshold, the memory cell is in a busy state, and in particular, the memory cell may be in a read state or a write state. In this embodiment, when the memory cell is in the writing process, the writing state may not be interrupted, so as to ensure that the writing state can perform data writing stably. After the writing process of the memory cell is finished, the scanning process of the memory cell is executed. The writing process can also be interrupted, and the scanning process is preferentially executed, so that the stacking redundancy of the scanning tasks is reduced. It should be noted that the time spent by the writing process and the scanning process is not an order of magnitude, and the time spent by the writing process is much higher than that spent by the scanning process. When the memory unit is in a reading state and the calibration times reach the scanning threshold value, the reading process of the memory unit can be interrupted, and the scanning process of the memory unit is executed, so that the scanning is completed as soon as possible, and the scanning task in the current period is prevented from accumulating to the next period. When the storage unit is in the scanning process, if the host read-write command is received, waiting for the scanning to be finished, and executing the host read-write command to reduce the accumulated scanning tasks in the period as much as possible. It should be noted that, in the solution provided in the present invention, the storage unit may be a plurality of mutually independent storage blocks 202, and the scanning process is to scan sequentially according to the time of establishing the scanning mark, or scan according to the serial number sequence of the storage blocks 202, so that the plurality of storage blocks 202 are not scanned at the same time. Note that, when a plurality of memory blocks 202 need to be scanned at a time, in the present embodiment, the scanning process of the plurality of memory blocks 202 is preferentially executed in order, and after the scanning of all the memory blocks 202 is completed, the reading and writing processes of the memory blocks 202 are continued according to the interrupt position of the memory 10.
Referring to fig. 1 to 7, and table 1, in an embodiment of the present invention, the control method of the present invention is tested by firmware burning and hardware configuration during a conventional test of the memory 10. The results of some of the tests are shown in Table 1.
Table 1 is as follows:
referring to fig. 1 to 7, and table 1, table 1 sets a scan threshold value of, for example, 100 according to a part of test data obtained in a conventional function test process of the memory 10 according to the control method provided by the present invention. As shown in Table 1, the calibration factor was increased from 12 to 108 at 1 min-8 min. The interval time of the scanning process is 8min. At 8min, the calibration coefficient exceeds the scan threshold 100, at which time the scan flag is set and the scan process is ready to be performed. And the calibration coefficient is increased from 23 to 119 in 9-13 min. The interval time of the scanning process is 5min. At 13min, the calibration coefficient exceeds the scan threshold 100, at which time the scan flag is set and the scan process is ready to be performed. And the calibration coefficient is increased from 15 to 107 within 14-27 min. The interval time of the scanning process is 14min. At 27min, the calibration coefficient exceeds the scan threshold 100, at which time the scan flag is set and the scan process is ready to be performed. And obtaining a calibration coefficient according to the temperature value and the conversion coefficient, so as to determine the time node for scanning. The scanning frequency of the invention is continuously changed according to the temperature, and no data redundancy is generated in the use process of the memory 10, and the scanning frequency can be infinitely increased or reduced under the condition that the temperature gradient and the conversion coefficient gradient are adjustable. The control method provided by the invention not only can obtain a better test result in the in-plant test, but also can adjust the temperature gradient and conversion coefficient through firmware upgrading even if the memory 10 reaches the user side, and has extremely high firmware compatibility. According to the control method provided by the invention, the corresponding relation between the temperature gradient and the conversion coefficient and the scanning threshold value can be adjusted by adapting to the service life of the memory 10, so that the service life of the memory 10 is prolonged.
Referring to fig. 1 to 7, and table 1, in one embodiment of the present invention, when the memory cells are the memory blocks 202, the memory cells are divided into regular memory cells and critical memory cells. Wherein the conventional memory cell is a memory cell other than the critical memory cell. Wherein the critical memory cell is a memory cell whose calibration coefficient is already adjacent to the scan threshold. Specifically, in one embodiment of the present invention, the calibration coefficient of the critical memory cell is greater than, for example, 80% of the scan threshold. In another embodiment of the present invention, the calibration factor used to determine the critical memory cell is related to the temperature value of the memory cell. As shown in table 1, the scanning frequency also becomes low when the temperature is low, and becomes high when the temperature is high. Thus, the critical temperature is set. In the new timing period, when the value of the first temperature data is greater than or equal to the critical temperature, the memory cell with the calibration coefficient greater than the scan threshold value, for example, 70% is marked as the critical memory cell. In the new timing period, when the value of the first temperature data is smaller than the critical temperature, the memory cell whose calibration coefficient is larger than the scan threshold value, for example, 90% is marked as the critical memory cell. In this embodiment, if the memory cell is the memory block 202 and the memory block 202 is marked as a critical memory cell, the host write command preferentially selects the normal memory cell, skipping the critical memory cell. In the event that a conventional memory cell has been fully written, the critical memory cell is recalled. Therefore, for the critical storage unit, the situation that a host read-write command is executed under the condition of adjacent scanning progress can be avoided, so that the accumulation of scanning tasks is reduced as much as possible, the stability and the reliability of data storage are improved, and the data is written into the more reliable storage unit.
The invention provides a memory and a control method thereof, wherein the memory comprises a flash memory chip, a temperature sensor, a temperature recording unit, a coefficient conversion unit and a scanning unit. Wherein the flash memory chip comprises a plurality of memory cells. The temperature sensor is connected to the storage unit to acquire temperature data of the storage unit. The temperature recording unit receives temperature data at preset time intervals. The coefficient conversion unit is electrically connected with the temperature recording unit, the conversion coefficient and the calibration coefficient of the current round are stored in the coefficient conversion unit, wherein the conversion coefficient is related to the temperature data, and the calibration coefficient of the current round is the sum of the conversion coefficient and the calibration coefficient of the previous round. The scanning unit is electrically connected with the scanning judging unit, and when the calibration coefficient of the round is larger than or equal to the scanning threshold value and the storage unit is in an idle state, the scanning unit is started and scans the storage unit. When the calibration coefficient of the current round is greater than or equal to the scanning threshold value, and when the storage unit is in a busy state, the scanning unit is started after the storage unit is switched to an idle state or after the busy state of the storage unit is interrupted. The invention provides a memory and a control method thereof, which ensure the data storage voltage of a memory unit by continuously scanning the memory unit, thereby improving the data retention capacity of the memory unit. According to the memory and the control method thereof provided by the invention, the scanning frequency of the memory unit can be automatically adjusted according to the temperature of the memory unit, the data retention capacity of the memory unit is improved, and meanwhile, the phenomenon of reading interference of the flash memory caused by too frequent scanning is avoided. The memory and the control method thereof can avoid the generation of redundancy of scanning task accumulation and scanning related parameters in the memory, and support the continuous updating of the scanning parameters of the control method within the service life of the memory, thereby not only having high implementation stability, but also improving the scanning efficiency and the service life of the memory.
The embodiments of the invention disclosed above are intended only to help illustrate the invention. The examples are not intended to be exhaustive or to limit the invention to the precise forms disclosed. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and the practical application, to thereby enable others skilled in the art to best understand and utilize the invention. The invention is limited only by the claims and the full scope and equivalents thereof.
Claims (10)
1. A memory, comprising:
a flash memory chip including a plurality of memory cells;
the temperature sensor is connected with the storage unit to acquire temperature data of the storage unit;
a temperature recording unit, which is used for receiving the temperature data at intervals of preset time;
the coefficient conversion unit is electrically connected with the temperature recording unit, and the coefficient conversion unit stores conversion coefficients and calibration coefficients of the current round, wherein the conversion coefficients are related to the temperature data, and the calibration coefficients of the current round are the sum of the conversion coefficients and the calibration coefficients of the previous round; and
The scanning unit is started and scans the storage unit when the calibration coefficient of the round is larger than or equal to a scanning threshold value and the storage unit is in an idle state;
and when the calibration coefficient of the current round is larger than or equal to a scanning threshold value and the storage unit is in a busy state, starting the scanning unit after the storage unit is converted into an idle state or after the busy state of the storage unit is interrupted.
2. The memory according to claim 1, wherein the memory comprises a timer unit electrically connected to the temperature sensor and the temperature recording unit, wherein a timing start node of the timer unit is a measurement time node of the temperature sensor of a previous round, and when a timing time of the timer unit reaches the preset time, the timing time of the timer unit is cleared.
3. A memory according to claim 2, wherein a portion of said memory cells are divided into critical memory cells, said scaling factor of said critical memory cells being less than said scan threshold and said scaling factor of said critical memory cells being greater than 70% of said scan threshold.
4. A memory according to claim 3, wherein the scanning unit stores therein a critical temperature, and wherein the calibration coefficient of the critical storage unit is greater than 70% of the scanning threshold value when the first temperature data of the temperature recording unit is greater than or equal to the critical temperature, and is greater than 90% of the scanning threshold value when the first temperature data of the temperature recording unit is less than the critical temperature, in a time period of the time counting unit.
5. A memory according to claim 1, wherein the coefficient conversion unit stores a conversion reference table in which the correspondence between the temperature data and the conversion coefficient is recorded.
6. A memory according to claim 1, wherein the coefficient conversion unit stores therein a correspondence relationship between temperature data and the conversion coefficient according to the following formula:
temperature data = T L +nT 0 Conversion coefficient=d+nc;
wherein T is L Minimum ambient temperature, T, for the memory to operate 0 And d is the transformation coefficient of the memory at the lowest ambient temperature, c is the preset transformation coefficient gradient, and n is the gradient progression of the current temperature data.
7. The memory according to claim 1, wherein the memory includes a scan determination unit electrically connected to the coefficient conversion unit to receive the calibration coefficient of the present wheel, wherein the scan threshold is stored in the scan determination unit, and wherein the scan determination unit sets a scan flag in the memory when the calibration coefficient of the present wheel is greater than or equal to the scan threshold.
8. A method of controlling a memory based on a memory according to claim 1, comprising the steps of:
acquiring temperature data of a storage unit in a memory at intervals of preset time;
obtaining a conversion coefficient of the temperature data, and obtaining the sum of the conversion coefficient and the calibration coefficient of the previous round as the calibration coefficient of the current round;
setting a scanning threshold, and scanning the storage unit when the calibration coefficient is larger than or equal to the scanning threshold and the storage unit is in an idle state; and
when the calibration coefficient of the current round is larger than or equal to a scanning threshold value, and when the storage unit is in a busy state, the storage unit is waited to be turned into an idle state or the busy state of the storage unit is interrupted while the temperature data is continuously acquired, so that the scanning process of the storage unit is started.
9. The method according to claim 8, wherein a scan flag is set in the memory when the calibration coefficient is equal to or greater than the scan threshold.
10. The method for controlling a memory according to claim 9, wherein when the memory unit is in a read-write process, the method for controlling the memory comprises the steps of:
when the scanning unit detects the scanning mark, interrupting the reading and writing process of the storage unit, and executing the scanning process of the storage unit;
after the scanning process is finished, the scanning mark of the storage unit is cleared; and
and continuing the reading and writing process of the storage unit.
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