CN117356175A - Method for mounting electronic component and local shielding substrate for mounting electronic component - Google Patents
Method for mounting electronic component and local shielding substrate for mounting electronic component Download PDFInfo
- Publication number
- CN117356175A CN117356175A CN202280036849.7A CN202280036849A CN117356175A CN 117356175 A CN117356175 A CN 117356175A CN 202280036849 A CN202280036849 A CN 202280036849A CN 117356175 A CN117356175 A CN 117356175A
- Authority
- CN
- China
- Prior art keywords
- solder
- electronic component
- electromagnetic wave
- mounting
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 90
- 238000000034 method Methods 0.000 title claims abstract description 59
- 229910000679 solder Inorganic materials 0.000 claims abstract description 214
- 238000010438 heat treatment Methods 0.000 claims abstract description 113
- 230000009471 action Effects 0.000 claims abstract description 17
- 238000002844 melting Methods 0.000 claims abstract description 17
- 230000008018 melting Effects 0.000 claims abstract description 17
- 230000001678 irradiating effect Effects 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 35
- 239000007769 metal material Substances 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 22
- 229910052782 aluminium Inorganic materials 0.000 description 22
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 22
- 229910052802 copper Inorganic materials 0.000 description 22
- 239000010949 copper Substances 0.000 description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 20
- 239000011888 foil Substances 0.000 description 20
- 229910052710 silicon Inorganic materials 0.000 description 20
- 239000010703 silicon Substances 0.000 description 20
- 239000011521 glass Substances 0.000 description 19
- 235000012431 wafers Nutrition 0.000 description 19
- 229910052751 metal Inorganic materials 0.000 description 13
- 238000009826 distribution Methods 0.000 description 12
- 239000004593 Epoxy Substances 0.000 description 10
- 239000002184 metal Substances 0.000 description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 230000007246 mechanism Effects 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 6
- 238000005476 soldering Methods 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000003685 thermal hair damage Effects 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000020169 heat generation Effects 0.000 description 4
- -1 polyethylene terephthalate Polymers 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 238000001931 thermography Methods 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- 229910001887 tin oxide Inorganic materials 0.000 description 4
- 229910001369 Brass Inorganic materials 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 3
- 239000010951 brass Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910000906 Bronze Inorganic materials 0.000 description 2
- 229910021380 Manganese Chloride Inorganic materials 0.000 description 2
- GLFNIEUTAYBVOC-UHFFFAOYSA-L Manganese chloride Chemical compound Cl[Mn]Cl GLFNIEUTAYBVOC-UHFFFAOYSA-L 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000010974 bronze Substances 0.000 description 2
- 229920001940 conductive polymer Polymers 0.000 description 2
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910021389 graphene Inorganic materials 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 229940099607 manganese chloride Drugs 0.000 description 2
- 235000002867 manganese chloride Nutrition 0.000 description 2
- 239000011565 manganese chloride Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000005404 monopole Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium(II) oxide Chemical compound [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 230000007723 transport mechanism Effects 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 1
- YLZOPXRUQYQQID-UHFFFAOYSA-N 3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]propan-1-one Chemical compound N1N=NC=2CN(CCC=21)CCC(=O)N1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F YLZOPXRUQYQQID-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004093 laser heating Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K13/00—Apparatus or processes specially adapted for manufacturing or adjusting assemblages of electric components
- H05K13/04—Mounting of components, e.g. of leadless components
- H05K13/046—Surface mounting
- H05K13/0465—Surface mounting by soldering
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/64—Heating using microwaves
- H05B6/74—Mode transformers or mode stirrers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/64—Heating using microwaves
- H05B6/80—Apparatus for specific applications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
- H05K2203/101—Using electrical induction, e.g. for heating during soldering
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
An electronic component mounting method, wherein the electronic component mounting method comprises: irradiating a substrate for mounting an electronic component with microwaves in a state in which an electromagnetic wave shield is applied to a part of solder parts, and heating and melting at least the solder parts to which the electromagnetic wave shield is not applied by the action of a magnetic field of a standing wave formed by the irradiation of microwaves, the substrate for mounting an electronic component comprising: a substrate; the plurality of solder portions on the substrate; and a plurality of electronic components disposed so as to be in contact with the plurality of solder portions in correspondence with the plurality of solder portions.
Description
Technical Field
The present invention relates to a method for mounting an electronic component and a partial shielding substrate for mounting an electronic component.
Background
By using microwaves, the object to be heated can be directly heated in a short time by the internal heating system. For example, as a heating method for mounting electronic components or the like using solder, a heating method using microwaves is known. However, when the microwave is irradiated to the conductive material, a spark may be generated. The present inventors have developed a microwave apparatus that generates a standing wave having a uniform and maximum electromagnetic field intensity by microwave irradiation, and that heats an object to be heated efficiently without generating sparks by using magnetic loss or induced current due to the action of a magnetic field instead of an electric field using the standing wave (for example, patent document 1).
Prior art literature
Patent literature
Patent document 1: international publication No. 2021/095723
Disclosure of Invention
Problems to be solved by the invention
In the mounting of electronic components using solder, it is necessary to control the heating temperature and heating time according to the heat resistance of the mounted electronic components. In addition, electronic components having different heat resistances may be soldered to the same substrate. In this case, for example, it is conceivable to solder-mount an electronic component having low heat resistance while setting the heating temperature to a low temperature side. However, if the heating temperature is set to the low temperature side, there is a problem as follows: a portion where the electronic component and the base material cannot be sufficiently bonded is generated, which reduces the yield, or requires time for sufficiently and firmly bonding.
In addition, it is also conceivable to control the heating temperature or heating time of the solder for each electronic component mounted on the same substrate, but there is a limit to improvement in production efficiency. In the case of applying microwave heating, it is not assumed that the heating temperature or heating time of the solder is controlled for each electronic component on the same substrate because the microwave is irradiated in the same manner.
The invention provides a method for mounting electronic components and a local shielding substrate for mounting electronic components, which can heat by using a magnetic field generated by standing waves of microwaves to efficiently and low-damage solder-mount electronic components with different heat resistances arranged on the same substrate.
Means for solving the problems
The above-described problems of the present invention are solved by the following means.
[ 1 ] A method for mounting an electronic component, wherein the method for mounting an electronic component comprises: irradiating a substrate for mounting an electronic component with microwaves in a state in which an electromagnetic wave shield is applied to a part of solder parts, and heating and melting at least the solder parts to which the electromagnetic wave shield is not applied by the action of a magnetic field of a standing wave formed by the irradiation of microwaves, the substrate for mounting an electronic component comprising: a substrate; the plurality of solder portions on the substrate; and a plurality of electronic components disposed so as to be in contact with the plurality of solder portions in correspondence with the plurality of solder portions.
The method for mounting an electronic component according to [ 2 ], wherein the solder portion of the plurality of solder portions to which the electromagnetic wave shield is not applied is heated and melted by the action of the magnetic field of the standing wave, and then the solder portion of the plurality of solder portions to which the electromagnetic wave shield is applied is heated and melted under heating conditions that are milder than the heating conditions of the solder portion to which the electromagnetic wave shield is not applied.
The method for mounting an electronic component according to item [ 3 ], wherein the solder portion of the plurality of solder portions to which the electromagnetic wave shield is not applied is heated and melted by the action of the magnetic field of the standing wave, and the solder portion of the plurality of solder portions to which the electromagnetic wave shield is applied is also heated and melted under heating conditions that are milder than the heating conditions of the solder portion to which the electromagnetic wave shield is not applied by the action of the magnetic field of the standing wave.
The method of mounting an electronic component according to [ 2 ] or [ 3 ], wherein a low-temperature solder is used for the solder portion to which the electromagnetic wave shield is applied among the plurality of solder portions.
The method for mounting an electronic component according to any one of [ 1 ] to [ 4 ], wherein the base material has an electrode portion, the electronic component also has an electrode portion, the solder portion after heating and melting is cured, and the electrode portion of the base material is electrically connected to the electrode portion of the electronic component via the cured solder portion.
The method of mounting an electronic component according to any one of [ 1 ] to [ 5 ], wherein the electromagnetic wave shield member comprises a metal material.
The method for mounting an electronic component according to any one of [ 1 ] to [ 6 ], wherein the standing wave is TM n10 A mode in which n is an integer of 1 or more, or the standing wave is TE 10n Mode, wherein n is an integer of 1 or more.
[8] A local shield substrate for electronic component mounting, wherein the local shield substrate for electronic component mounting comprises:
a substrate;
a plurality of solder portions on the substrate; and
a plurality of electronic components arranged in such a manner as to be in contact with the plurality of solder portions in correspondence with the plurality of solder portions,
the partial shielding substrate for mounting electronic components is formed by applying electromagnetic wave shielding material to a part of the solder parts.
The local shield substrate for electronic component mounting according to item [ 9 ], wherein at least the solder portion to which the electromagnetic wave shield is not applied is melted by the action of the magnetic field of the standing wave of the microwave.
The local shield substrate for electronic component mounting according to [8] or [ 9 ], wherein the solder portion to which the electromagnetic wave shield is applied contains low-temperature solder.
In the present invention, the term "mounting of electronic components" means to assemble electronic components in a device or apparatus (for example, to mount electronic components on a substrate).
In the present invention, the term "electronic component" is not limited to electronic components such as semiconductor elements and Integrated Circuits (ICs), and is used in a broad sense including passive elements such as resistors, capacitors, and inductors, sensors such as various measuring elements and imaging elements, optical elements such as light receiving elements and light emitting elements, and acoustic elements.
In the present invention, the term "solder" is used in a broader sense than usual. That is, in the present invention, the "solder" is not necessarily required to have conductivity, and may be included in the "solder" of the present invention regardless of its composition, as long as it has a property that it can be melted by heating at a certain temperature or higher and then solidified, and can directly or indirectly connect the base material and the electronic component. In addition, a material whose conductivity is reduced or lost by heating and melting is also included in the "solder" of the present invention.
In the present invention, the "electromagnetic wave shield" may have a function of attenuating electromagnetic waves to a desired level. That is, in the present invention, the term "electromagnetic wave shield" means a shield that includes both a form of completely blocking electromagnetic waves and a form of partially blocking electromagnetic waves.
In the present invention, the numerical range indicated by the term "to" refers to a range including the numerical values described before and after the term "to" as the lower limit value and the upper limit value. For example, when the numerical range is described as "a to B", the numerical range is "a or more and B or less".
Effects of the invention
According to the method for mounting electronic components and the partially shielded substrate for mounting electronic components of the present invention, electronic components having different heat resistances, which are disposed on the same substrate, can be efficiently and with low damage by heating with a magnetic field generated by a standing wave of microwaves.
Drawings
Fig. 1 is an explanatory diagram (side view) schematically showing a state in which a mounting substrate to which an electromagnetic wave shield is applied in a part of a plurality of solder parts is subjected to microwave irradiation, and the solder part to which the electromagnetic wave shield is not applied is melted and solidified by magnetic field heating, and then the electromagnetic wave shield is released and subjected to microwave irradiation under milder conditions, and the solder part to which the electromagnetic wave shield is applied is also melted by magnetic field heating.
Fig. 2 is a view of the state of fig. 1 as seen from the upper side of the mounting substrate. The state of the electronic component and the solder portion located on the lower side of the electromagnetic wave shield is also shown by a broken line.
Fig. 3 is a block diagram schematically showing an example of a preferred overall structure of the microwave heating device, and is a diagram schematically showing a cavity resonator in a cross-sectional view.
Fig. 4 is a substitute photograph of a drawing showing a state in which both a silicon wafer (upper side in fig. 4) having a solder paste placed thereon and an aluminum foil case (lower side in fig. 4) having a silicon wafer having a solder paste placed therein are placed on a glass epoxy resin substrate in experimental example 1-1.
Fig. 5 is an explanatory diagram schematically showing the state shown in the photograph of fig. 4 and also schematically showing the state inside the aluminum foil box in a perspective manner.
Fig. 6 is a graph of a result of measuring a temperature distribution when the thermal image camera is used to irradiate microwaves and perform magnetic field heating in the state shown in the photograph of fig. 4.
Fig. 7 is a graph showing the result of measuring the temperature distribution when the magnetic field heating is performed by irradiating microwaves using a thermal imaging camera by placing only the aluminum foil box having the silicon wafer with solder paste placed inside on the glass epoxy substrate in examples 1-2.
Fig. 8 is a graph showing the result of measurement of the temperature distribution when the microwave is irradiated and the magnetic field heating is performed using a thermal imaging camera in a state where both the silicon wafer (lower side in fig. 8) on which the solder paste is placed and the copper box (upper side in fig. 8) on which the silicon wafer on which the solder paste is placed are placed on the glass epoxy substrate in experimental example 2-1.
Fig. 9 is a graph showing the result of measuring the temperature distribution when the magnetic field heating is performed by the microwave irradiation using a thermal imaging camera by placing only the copper plate case in which the silicon wafer with the solder paste placed therein is placed on the glass epoxy resin substrate in example 2-2.
Detailed Description
[ method of mounting electronic component ]
A preferred embodiment of the method for mounting an electronic component of the present invention (hereinafter, also simply referred to as "the method for mounting the present invention") will be described with reference to the accompanying drawings. In the drawings, the dimensions and scale of the respective portions may be different from the actual ones for convenience of explanation. In addition, the drawings are schematically shown for ease of understanding. The present invention is not limited to the following embodiments except for the matters defined in the present invention.
The installation method of the invention comprises the following steps: the solder portion of the electronic component mounting board (hereinafter, also simply referred to as "mounting board") is heated and melted, whereby the electronic component is soldered to the base material. By this mounting, an electronic component mounting board (a board on which electronic components are mounted, hereinafter also referred to simply as a "mounting board") in which electronic components are fixed to a base material is obtained.
In the mounting method of the present invention, the mounting board includes: a substrate; a plurality of solder portions on the substrate; and a plurality of electronic components disposed so as to be in contact with the plurality of solder portions in correspondence with the plurality of solder portions. An electromagnetic wave shield is applied to a part of the plurality of solder portions of the mounting board so as to cover at least the solder portion and an electronic component in contact with the solder portion. That is, the mounting board used in the present invention is a partial shielding board for mounting electronic components. By radiating microwaves to the partially shielded substrate for electronic component mounting so as to form a standing wave, at least the solder portion to which the electromagnetic wave shield is not applied is heated and melted by the action of the magnetic field of the standing wave (hereinafter, heating by the action of the magnetic field of the standing wave is also referred to as "magnetic field heating")
Examples of the mode of the standing wave include TM n10 (n is an integer of 1 or more) mode (e.g., TM 210 、TM 310 Mode of (d) and TE 10n (n is an integer of 1 or more). As will be described later, the standing wave is preferably TM from the viewpoint that the maximum portion of the magnetic field strength can be efficiently formed along the central axis of the cavity resonator 110 A mode.
At TE 10n In the case of the (n is an integer of 1 or more) mode, TE in which n=1 is also preferable 101 Mode, also TE 102 Or TE (TE) 103 A mode.
By disposing the mounting substrate at the maximum magnetic field strength or at the periphery thereof (the magnetic field strength portion sufficient to melt the solder portion), at least the solder portion to which the electromagnetic wave shield is not applied can be efficiently heated and melted.
Examples of the heating by the magnetic field generated by the microwave irradiation include heat generation due to eddy current loss (resistance due to induced current) generated by the magnetic field and heat generation due to magnetic loss generated by the magnetic field. The former can utilize heat generation of a metal of a nonmagnetic material, and the latter can utilize heat generation of a magnetic material. The magnetic field heating is described in detail in, for example, international publication No. 2021/095723 and International publication No. 2019/156142, which are incorporated herein by reference.
In the mounting method of the present invention, the solder portion may be heated by directly applying a magnetic field to the solder portion, or may be heated indirectly via a heat generating portion directly heated by the application of the magnetic field. The heat generating portion may be in a form of being in contact with each solder portion in correspondence with each solder portion. A method of mounting such a heat generating portion is known per se, and for example, refer to japanese patent application laid-open No. 2021/095723, japanese patent application laid-open No. 2019/156142, and the like.
The base material constituting the mounting substrate used in the present invention is preferably formed of a dielectric such as a resin, an oxide, or a ceramic that is easily permeable to microwaves. For example, the substrate may be a thin substrate (for example, a sheet or a tape) such as a film or paper, or may be a plate-like body such as a resin substrate, a ceramic substrate, a glass substrate, or an oxide substrate having a certain thickness. In addition, a metal plate can be used as the base material. The substrate may be a substrate having a coating film of the dielectric formed on the surface of a metal plate.
Examples of the resin that can constitute the base material include polyimide, polyethylene terephthalate (PET), polytetrafluoroethylene (PTFE), polyethylene naphthalate (PEN), and epoxy resin. Examples of the oxide or ceramic that can constitute the substrate include silicon oxide (SiO 2 ) Iron oxide (Fe) 2 O 3 ) Tin oxide (SnO), titanium oxide (TiO) 2 ) Silicon nitride (SiN), aluminum oxide (Al) 2 O 3 ) Silicon oxide (SiO) 2 ) Iron oxide (Fe) 2 O 3 ) Tin oxide (SnO), titanium oxide (TiO) 2 ) Manganese chloride (MnCl) 2 ) Etc. Examples of the metal plate include an aluminum plate and a copper plate.
The base material preferably has heat resistance equal to or higher than the melting point of the solder.
The substrate may have a single-layer structure or a multilayer structure. In the case of a multilayer structure, for example, a metal-clad laminate (e.g., a copper-clad laminate) is also preferably used as the base material.
The solder portion of the mounting substrate is composed of solder. The type of solder is not particularly limited, and a solder for solder mounting can be appropriately used according to the purpose. As described above, in the present invention, the "solder" is not necessarily required to have conductivity, and may be used as the solder in the present invention regardless of its composition, as long as it has a property that it can be melted by heating at a certain temperature or higher and then solidified, and can directly or indirectly connect the base material and the electronic component. That is, a material that exhibits an adhesive function by melting by heating and then solidifying is included in the "solder" of the present invention.
In a preferred embodiment of the mounting method of the present invention (hereinafter referred to as embodiment 1), only the solder portion to which the electromagnetic wave shield is not applied is heated and melted by the above-described magnetic field heating. For example, by applying an electromagnetic wave shield that substantially blocks microwaves to a solder portion where a thermolabile electronic component is disposed, thermal damage to the electronic component can be avoided. The solder portion provided with the heat-labile electronic component is exposed to a milder heating condition after the electromagnetic wave shield is removed, whereby soldering can be performed while suppressing thermal damage of the electronic component. That is, the solder part to which the electromagnetic wave shield is not applied is instantaneously heated and melted by microwave irradiation at a time to efficiently mount the electronic component, and then the electromagnetic wave shield to which the solder part of the electromagnetic wave shield is applied is removed, whereby the solder part from which the electromagnetic wave shield is removed can be soldered and mounted under milder heating conditions. The means for producing the mild heating condition is not particularly limited, and examples thereof include a method of suppressing irradiation energy of microwaves and performing irradiation. In addition, heating methods other than microwave irradiation (e.g., electric furnace heating, hot air heating, infrared heating, hot air-infrared combined heating, laser heating, high-frequency heating, gas phase welding heating, flow heating, reflow heating, soldering iron heating, hot air heating, and the like) may be employed.
In embodiment 1, fig. 1 schematically shows a form in which a mounting substrate is irradiated with microwaves and a solder portion is melted by heating in a magnetic field.
Fig. 1 is an explanatory diagram schematically showing a state in which a copper-clad laminate is used as a base material 1, a solder portion 2 is disposed on the base material 1, and a mounting substrate on which an electronic component 3 is disposed in contact with the solder portion 2 is irradiated with microwaves 5, and the solder portion 2 to which an electromagnetic wave shield is not applied is melted (2B) and cured (2C) by magnetic field heating, in a state in which the mounting substrate is viewed from the side. The mounting board is provided with an electromagnetic wave shield 4 so as to cover a part 2A of the solder part 2. A copper portion (an intermediate layer portion of the base material 1) of the copper-clad laminate is used as a part of the electromagnetic wave shield 4. Examples of the shielding material other than the copper portion of the copper-clad laminate used as the base material 1 include materials including metals (copper, aluminum, gold, silver, nickel, zinc, brass, stainless steel, phosphor bronze, lead, and the like), graphite, graphene, conductive glass, conductive polymers, conductive glass, and conductive ceramics (antimony doped tin oxide, and the like), and more preferably include metal materials.
As described above, in the mounting method of the present invention, a metal-clad laminate (preferably, a copper-clad laminate) in which a conductive metal foil such as copper is assembled can be used as a base material, and the metal foil can be used as a part of an electromagnetic shield.
The electromagnetic wave shield may be disposed so as to cover the entire substrate, solder portion, and electronic component. That is, the electromagnetic wave shield can be appropriately arranged so as to reduce the amount of magnetic field energy that reaches the solder portion directly or indirectly.
As shown in fig. 1, by forming a standing wave by radiating microwave 5 to a mounting substrate to which electromagnetic wave shield 4 is applied to part 2A of solder part 2 and disposing the solder part in a part where the magnetic field energy in the standing wave is sufficiently high, solder part 2B in a part where electromagnetic wave shield 4 is not applied can be instantaneously and efficiently heated and melted, and electronic components can be soldered and mounted by using solder part 2B.
In the embodiment of fig. 1, the solder portion 2A to which the electromagnetic wave shield 4 is applied does not reach the inside of the electromagnetic wave shield or does not reach the inside of the electromagnetic wave shield sufficiently, and therefore, the solder portion 2A does not melt, and the electronic component 3 in contact with the solder portion 2A can be protected from heat. In addition, the circuit within the electronic component can be protected and protected from damage caused by electromagnetic wave energy by the electromagnetic wave shield. Then, the electromagnetic wave shield 4 to which the solder portion of the electromagnetic wave shield 4 is applied is removed, and the solder portion 2A from which the electromagnetic wave shield 4 is removed can be soldered under milder heating conditions. In the solder portion 2A to which the electromagnetic wave shield 4 is applied, for example, a low-temperature solder (in the present invention, the "low-temperature solder" has a melting point of 190 ℃ or less, preferably 180 ℃ or less, and the melting point may be 170 ℃ or less, or 160 ℃ or less, and the melting point of the low-temperature solder is usually 120 ℃ or more, preferably 130 ℃ or more, or 140 ℃ or more).
As described above, according to the mounting method of the present invention, the solder portion provided with the relatively heat-resistant electronic component can be instantaneously and efficiently heated and melted by the magnetic field heating of the microwave, and the solder portion provided with the heat-resistant electronic component can be protected from the magnetic field heating. Then, the electromagnetic wave shield is removed, and the solder portion after the electromagnetic wave shield is removed can be soldered under milder heating conditions (for example, milder heating by a microwave magnetic field). Fig. 2 is an explanatory view schematically showing the configuration of fig. 1 and a mounting board from the state in which the upper side includes the inside of the shield and the solder portion on the lower side of the electronic component.
The means (microwave heating device) for performing magnetic field heating using a microwave standing wave on the mounting substrate is not particularly limited, and a general method can be widely applied. The form of the microwave heating device suitable for the installation method of the present invention will be described later.
In another preferred embodiment of the mounting method of the present invention (hereinafter referred to as embodiment 2), the solder portion to which the electromagnetic wave shield is applied is heated and melted in a region where the temperature is lower, in addition to the solder portion to which the electromagnetic wave shield is not applied, by the above-described magnetic field heating. As shown in the examples described below, the following is known: the magnetic field energy reaching the inside of the shield of the portion to which the electromagnetic wave shield is applied can be controlled by the state of the electromagnetic wave shield. Therefore, the magnetic field energy reaching the inside of the shield at the portion where the electromagnetic wave shield is applied is made relatively smaller than the magnetic field energy reaching the solder portion where the electromagnetic wave shield is not applied, but the solder can be heated to a temperature at which the solder is thermally melted. This makes it possible to mount the electronic component by soldering under milder conditions while suppressing thermal damage to the electronic component in contact with the solder portion to which the electromagnetic wave shield is applied.
Examples of the method of controlling the magnetic field energy reaching the inside of the shield to which the portion of the electromagnetic wave shield is applied according to the state of the electromagnetic wave shield include a method of forming a gap and/or a hole in a portion of the electromagnetic wave shield, a method of appropriately using a material having relatively low shielding ability (for example, zinc, brass, stainless steel, phosphor bronze, lead, etc.), graphite, graphene, conductive glass, conductive polymer, conductive glass, conductive ceramic (antimony doped tin oxide, etc.), a method of operating the thickness of a sheet or film for the shield, and a method of adding, coating, or laminating a dielectric, a magnetic, or both. In addition, by combining control of the energy and heating time of the irradiated microwaves, control of the microwave irradiation of the pulse waveform, and control of the conveyance speed of the mounting substrate, the arrival amount of the magnetic field energy into the electromagnetic wave shield can be more flexibly adjusted.
In embodiment 2, an electronic component a that is easily damaged by heat can be disposed in a solder portion to which an electromagnetic wave shield is applied, and an electronic component B that is relatively heat-resistant (heat-resistant higher than the electronic component a) can be disposed in a portion to which the electromagnetic wave shield is not applied. Accordingly, it is possible to efficiently perform soldering while suppressing damage caused by heat of the electronic component according to the type of the electronic component. In addition, the low-temperature solder can be used for the solder portion to which the electromagnetic wave shield is applied. In this way, by using solder that is easily melted in a region having a lower temperature in the solder portion to which the electromagnetic wave shield is applied, thermal damage to the electronic component that is in contact with the solder portion to which the electromagnetic wave shield is applied can be suppressed, and the bonding strength by the solder can be sufficiently improved.
In still another embodiment of the mounting method of the present invention (hereinafter referred to as embodiment 3), it is designed that: when the solder portion to which the electrical conductivity of the electromagnetic wave shield is not applied is heated and melted by the magnetic field heating, the electrical conductivity of the solder portion is reduced to some extent by the heating and melting. Accordingly, the efficiency of heating the magnetic field of the solder portion to which the electromagnetic wave shield is applied can be improved with time by the heating and melting of the solder portion to which the electrical conductivity of the electromagnetic wave shield is not applied. As a result, the solder portion to which the electromagnetic wave shield is applied can be heated and melted under heating at a lower temperature or under heat treatment conditions for a shorter time. This mode will be described in more detail.
In the mounting substrate, the solder portion to which the electromagnetic wave shield is applied is in a state in which the irradiated microwaves are blocked or weakened. However, after the present inventors advanced the study, the following facts are known.
First, when the magnetic field heating of the standing wave of the microwave is performed on the mounting substrate in which the solder portion to which the electromagnetic wave shield is applied and the solder portion to which the electromagnetic wave shield is not applied are formed on the base material, the solder portion to which the electromagnetic wave shield is not applied can be instantaneously and efficiently heated and melted, and the solder portion to which the electromagnetic wave shield is applied can be brought into a state in which the solder portion is not heated or in which the heating is suppressed. This is the case as described above.
On the other hand, the following is known: when the magnetic field heating of the standing wave of the microwave is performed on the mounting substrate on which only the solder portion to which the electromagnetic wave shield is applied, the solder portion inside the mounting substrate can be efficiently heated, although the electromagnetic wave shield is applied. This is shown as an experimental example in the following item [ example ]. That is, as the magnetic field heating target existing in the portion where the electromagnetic wave shield is not applied becomes smaller, the magnetic field energy enters the electromagnetic wave shield in which the magnetic field heating target (solder) exists.
When such a phenomenon is applied, the following can be performed. That is, when the solder portion to which the electrical conductivity of the electromagnetic wave shield is not applied is heated and melted by the magnetic field heating, the electrical conductivity of the solder portion is weakened by the heating and melting, so that the magnetic field energy reaching the solder portion to which the electromagnetic wave shield is applied can be increased with time. Therefore, the solder portion to which the electromagnetic wave shield is applied can be heated and melted under milder conditions.
As a solder design in which the conductivity of the solder portion is reduced by heating and melting, there are the following methods: before heating, a process of laminating or mixing elements that chemically react with the solder is performed, and the solder is chemically reacted with the elements and made into other compounds when the solder is melted by heating. Examples of the element that performs the chemical reaction include oxygen, nitrogen, sulfur, phosphorus, silicon, aluminum, iron, nickel, copper, silver, lead, bismuth, and antimony. For example, by performing a process of laminating an organic compound or an inorganic compound containing such an element as a thin film on a solder, a process of mixing the element as a powder with the solder, a process of mixing the element as a liquid with the solder, or the like, and thermally melting the solder portion by heating with a magnetic field, at least a part of the solder portion can be designed to have reduced conductivity.
Further, the degree to which the conductivity is reduced can be appropriately set according to the purpose. The conductive state may be maintained to a certain extent so that electrical connection can be maintained, or may be weakened to a degree that electrical conductivity is not substantially shown in the case where only fixation of the electronic component is aimed. In addition, by combining the energy of the irradiated microwaves and the control of the heating time, the amount of arrival of the magnetic field energy into the electromagnetic wave shield can be more flexibly adjusted.
As described above, according to the mounting method of the present invention, soldering can be performed while appropriately controlling the thermal processes applied to the respective electronic components according to the types (heat resistance) of the electronic components by heating with the magnetic field generated by microwave irradiation. That is, the mounting method of the present invention includes the following modes.
The following modes (embodiments 1 to 3) are set: the solder portions of the plurality of solder portions to which the electromagnetic wave shield is not applied are heated and melted by the action of the magnetic field of the standing wave formed by the microwave irradiation, and then the solder portions of the plurality of solder portions to which the electromagnetic wave shield is applied are heated and melted under milder conditions (heating at a lower temperature and/or heating for a shorter time).
The solder portions of the plurality of solder portions to which the electromagnetic wave shield is not applied are heated and melted by the action of the magnetic field of the standing wave formed by the microwave irradiation, and the solder portions of the plurality of solder portions to which the electromagnetic wave shield is applied are also heated and melted under milder conditions by the action of the magnetic field of the standing wave (embodiments 2 and 3).
The mounting method of the present invention may be a combination of embodiment 1 and embodiment 2. For example, the following modes can be adopted: the electromagnetic wave shielding member is adjusted so as not to heat and melt a part of the solder parts to which the electromagnetic wave shielding member is applied, and the remaining part of the solder parts to which the electromagnetic wave shielding member is applied is adjusted so as to reduce the magnetic field energy to a certain extent, while suppressing thermal damage to the electronic component, and the electronic component is soldered under milder conditions.
In a preferred embodiment of the mounting method of the present invention, the following configuration is adopted: the base material has an electrode portion, and the electronic component also has an electrode portion, and the solder portion after heating and melting is solidified, and the electrode portion of the base material and the electrode portion of the electronic component are electrically connected via the solidified solder portion.
In addition, regarding the above-described mounting method, the present invention provides a partial shielding substrate for mounting an electronic component, the partial shielding substrate for mounting an electronic component comprising: a substrate; a plurality of solder portions on the substrate; and a plurality of electronic components arranged so as to be in contact with the plurality of solder portions in correspondence with the plurality of solder portions, wherein the partial shielding substrate for mounting the electronic components is formed by applying an electromagnetic wave shielding material to a part of the solder portions.
Next, a preferred embodiment of the microwave heating device used in the mounting method of the present invention will be described, but the present invention is not limited to the embodiment using the microwave heating device described below, except for the matters specified by the present invention. Further, the following microwave heating apparatus is known per se, and, in addition to the matters described below, reference is made to, for example, international publication No. 2021/095723.
[ microwave heating device ]
Fig. 3 is an explanatory diagram schematically showing an outline of the microwave heating apparatus. Therefore, in fig. 3, some of the structures may be omitted for convenience of explanation.
As shown in fig. 3, the microwave heating device 10 includes a cavity resonator (hereinafter also referred to as a (cylindrical) cavity resonator) 11 having a microwave irradiation space 51. The cavity resonator 11 may be a cylinder or a polygonal column having two parallel surfaces facing each other with the cylinder center axis as the center. That is, it is sufficient that a standing wave having the maximum and uniform magnetic field intensity can be formed on the central axis C of the cavity resonator 11. Hereinafter, a cylindrical cavity resonator will be described.
The cylindrical cavity resonator 11 shown in fig. 3 forms a TM, for example, having the maximum and uniform magnetic field strength along a cylinder center axis (hereinafter also referred to as a center axis) C 110 Mode standing waves. Hereinafter, the central axis of the cavity resonator 11 and the central axis of the microwave irradiation space 51 are used in the same sense.
The cavity resonator 11 has an inlet 12 and an outlet 13 facing each other with a cylindrical center axis C of the cavity resonator interposed therebetween, the inlet 12 being provided in a cavity wall 11SA of the cavity resonator 11, and the outlet 13 being provided in a cavity wall 11SB facing the cavity wall 11 SA. The inlet 12 and the outlet 13 are preferably formed in a slit shape having a width through which a mounting board (electromagnetic wave shield not shown is applied to a solder part of the mounting board) in a state where the electronic component 9 is mounted via the solder part 8 can pass. In the cavity resonator 11, a transport mechanism 31 is provided in a magnetic field region 52 where an electric field is minimum and a magnetic field strength is maximum and uniform, and the transport mechanism 31 transports a mounting substrate on which the electronic component 9 is mounted via the solder portion 8. The magnetic field strength of the magnetic field region 52 decreases from the cylinder center axis C toward the outside. In the drawing, as an example, a region where the magnetic field strength is 3/4 or more of the maximum value is schematically shown by a two-dot chain line.
By the above-mentioned conveying mechanism 31, the mounting substrate on the support body 50 is introduced into the microwave irradiation space 51 from the inlet 12, at least a part of the solder portion is heated and melted, and the processed mounting substrate is carried out from the outlet 13.
For example, in generating TM 110 In the case of the cylindrical cavity resonator 11 of the standing wave of the mode, the magnetic field region 52 is a space in which the electric field strength is minimum and the magnetic field strength is maximum at the center axis C and the magnetic field strength is uniform along the center axis C.
A microwave generator 21 is disposed in the cavity resonator 11, and microwaves are supplied to the cavity resonator 11. Generally, the frequency of the microwave is 0.3 to 300GHz, and in particular, the S-band of 2 to 4GHz is generally used. Alternatively, 900 to 930MHz, 5.725 to 5.875GHz, etc. can be used. However, other frequencies can be used.
In the microwave heating device 10, the microwave generated by the microwave generator 21 is supplied from the microwave supply port 14 to the microwave irradiation space 51 in the cavity resonator 11 with respect to the cavity resonator 11, and a standing wave is formed in the microwave irradiation space.
Preferably, the microwaves supplied from the microwave generator 21 are supplied with the frequency adjusted. By adjusting the frequency, the magnetic field intensity distribution of the standing wave formed in the cavity resonator 11 can be controlled to a desired distribution state stably. In addition, the intensity of the standing wave can be adjusted by the output of the microwaves.
Further, the frequency of the microwaves supplied from the microwave supply port 14 can form a specific single-mode standing wave in the microwave irradiation space 51.
The configuration of the microwave heating device 10 of the present invention will be described in order.
< Cavity resonator >)
The cylindrical cavity resonator (cavity) 11 used in the microwave heating device 10 has one microwave supply port 14, and is not particularly limited as long as a standing wave of a single mode is formed when microwaves are supplied. The microwave irradiation space 51 of the cavity resonator used in the present invention is not limited to the cylindrical shape shown in the drawings. That is, the cavity resonator may be a polygonal column type cavity resonator having two parallel surfaces facing each other with the central axis as the center, even if it is not cylindrical. For example, the cross section perpendicular to the central axis may be a square, a regular hexagon, a regular octagon, a regular dodecagon, or a regular dodecagon. Alternatively, the shape may be a polygonal tubular shape which is flattened between two faces facing each other with respect to the central axis of the regular even-numbered polygon. In the case of the above-described polygonal-prism-shaped cavity resonator, the corners inside the cavity resonator may have roundness. In addition to the cylindrical shape, the microwave irradiation space may be a cavity resonator having a space such as a columnar shape or an ellipsoid obtained by increasing the roundness.
Even in such a polygonal shape, the same function as a cylindrical shape (that is, a standing wave having the maximum and uniform magnetic field intensity can be formed on the central axis) can be achieved.
The size of the cavity resonator 11 can be appropriately designed according to the purpose. It is desirable that the resistivity of the cavity resonator 11 is small. Generally, it is made of metal, and as an example, aluminum, copper, iron, magnesium, or an alloy thereof, or an alloy such as brass or stainless steel can be used. The resin, ceramic, or metal may be coated with a substance having a low specific resistance on the surface by plating, vapor deposition, or the like. In the coating, for example, a material containing silver, copper, gold, tin, or rhodium can be used.
< conveying mechanism >)
The conveying mechanism 31 preferably has a supply-side conveying portion 31A, a delivery-side conveying portion 31B, or both.
Alternatively, the feeding unit 31, the feeding port 12, and the discharge port 13 may not be provided in the conveying mechanism 31. In this case, the base material 6 is disposed in advance at a position where the magnetic field in the cavity resonator is maximum. Then, after performing the treatment for an appropriate time, the microwaves are stopped. After that, a part of the cavity resonator can be opened, and the substrate 6 can be removed as needed.
Alternatively, the cavity resonator itself may be moved without using a special conveying mechanism as the supply unit 31.
< supply of microwave >
In the supply of microwaves, a microwave generator 21, a microwave amplifier 22, an isolator 23, an impedance matcher 24, and an antenna 25 are preferably used.
A microwave supply port 14 is provided on or near a wall surface (inner surface of the cylinder) of the cavity resonator 11 parallel to the central axis C. In one embodiment, the microwave supply port 14 has an antenna 25 capable of applying microwaves. In fig. 3, a microwave supply port 14 using a coaxial waveguide converter is shown. In this case, the antenna 25 is a monopole antenna excited by an electric field. In this case, an optical ring (not shown) may be used as an appropriate opening between the microwave supply port 14 and the cavity resonator 11 in order to effectively form a standing wave. The cavity resonator 11 may be provided with an antenna without using the waveguide 14. In this case, a loop antenna (not shown) as a magnetic field excitation antenna may be provided on and near the side wall surface of the cavity resonator. Alternatively, a monopole antenna to be excited by an electric field may be provided on the upper surface or the lower surface of the cavity resonator.
The antenna 25 receives the supply of microwaves from the microwave generator 21. Specifically, the microwave amplifier 22, the isolator 23, the matcher 24, and the antenna 25 are preferably connected to the microwave generator 21 in this order. Cables 26 (26A, 26B, 26C, 26D) are used for each connection.
As each cable 26, for example, a coaxial cable is used. In this configuration, microwaves emitted from the microwave generator 21 are supplied from the microwave supply port 14 to the microwave irradiation space 51 in the cavity resonator 11 through the antenna 25 via the cables 26.
[ microwave Generator ]
As the microwave generator 21 used in the microwave heating device 10 of the present invention, for example, a microwave generator such as a magnetron or a microwave generator using a semiconductor solid element can be used. From the viewpoint of being able to finely adjust the frequency of microwaves, a VCO (Voltage Controlled oscillator: voltage-controlled oscillator), a VCXO (Voltage controlled Crystal oscillator: voltage-controlled crystal oscillator), or a PLL (Phase locked loop: phase-locked loop) oscillator is preferably used.
[ microwave Amplifier ]
The microwave heating device 10 includes a microwave amplifier 22. The microwave amplifier 22 has a function of amplifying the output of the microwaves generated by the microwave generator 21. The structure thereof is not particularly limited. For example, a semiconductor solid element composed of a high-frequency transistor circuit is preferably used.
[ isolator ]
The microwave heating device 10 is provided with an isolator 23. The isolator 23 serves to suppress the influence of reflected waves generated in the cavity resonator 11 and to protect the microwave generator 21. That is, microwaves are supplied in one direction (the direction of the antenna 25). In the case where the microwave amplifier 22 and the microwave generator 21 are not damaged by the reflected wave, an isolator may not be provided.
Matcher
The microwave heating device 10 includes a matching unit 24. The matching unit 24 matches (matches) the impedance of the microwave generator 21, the microwave amplifier 22, and the isolator 23 with the impedance of the antenna 25. Even if the reflected wave due to the mismatch is generated, the microwave amplifier 22 and the microwave generator 21 are not damaged, and if the mismatch can be adjusted so that the mismatch is not generated, the matcher may not be provided.
Control System
A thermal image measuring device (thermo camera) 41 or a radiation thermometer (not shown) for measuring the temperature is preferably disposed in the microwave heating device 10. Preferably, a window 15 for measuring the temperature distribution in the cavity resonator 11 by the thermal image measuring device 41 or a radiation thermometer (not shown) is provided in the cavity resonator 11. The measurement image of the temperature distribution measured by the thermal image measuring device 41 or the temperature information measured by the radiation thermometer is transmitted to the control unit 43 via the cable 42.
Further, it is preferable that the electromagnetic wave sensor 44 is disposed on the cavity wall 11S of the cavity resonator 11. A signal corresponding to the electromagnetic field energy in the resonator 11 detected by the electromagnetic wave sensor 44 is transmitted to the control unit 43 via the cable 45. The control unit 43 can detect the formation state (resonance state) of the standing wave generated in the microwave irradiation space 51 of the cavity resonator 11 based on the signal of the electromagnetic wave sensor 44. When standing waves are formed, that is, resonance occurs, the output of the electromagnetic wave sensor 44 increases. By adjusting the oscillation frequency of the microwave generator 21 so as to maximize the output of the electromagnetic wave sensor 44, the microwave frequency can be controlled to match the resonance frequency of the cavity resonator 11.
The control unit 43 can feed back the frequency of the microwave, at which the standing wave of the constant frequency appears in the cavity 11, to the microwave generator 21 via the cable 46 based on the detected frequency. Based on this feedback, the frequency of the microwaves supplied from the microwave generator 21 can be precisely controlled in the control section 43. In this way, a standing wave can be stably generated in the cavity resonator 11. The control unit 43 can instruct the microwave amplifier 22 to output microwaves, thereby adjusting the microwaves to be supplied to the antenna 25 at a constant output. Alternatively, the attenuation ratio of an attenuator (not shown) provided between the microwave generator 21 and the microwave amplifier 22 may be adjusted by an instruction from the control unit 43 without changing the amplification ratio of the microwave amplifier 22. The microwave output may be feedback-controlled based on the instruction value of the thermal image measuring device 41 or the radiation thermometer so that the object to be heated becomes the target temperature. In the case of using a device capable of supplying a large output, such as a magnetron, as the microwave oscillator 21, an instruction of the control unit 43 may be provided to the microwave generator 21 so as to adjust the microwave output.
As a control method not using the electromagnetic wave sensor 44, the magnitude of the reflected wave from the cavity resonator 11 may be measured and used. For measurement of the reflected wave, the isolation amount obtained from the isolator 23 can be used. By adjusting the frequency of the microwave generator so as to minimize the reflected wave signal, the energy of the microwaves to the cavity resonator 11 can be efficiently supplied.
In the microwave heating device 10, the frequency of the standing wave is not particularly limited as long as the standing wave can be formed in the cavity resonator 11. Examples of the mode in which the region of maximum magnetic field intensity is formed on the central axis C include TM n10 (n is an integer of 1 or more) mode (e.g., TM 210 、TM 310 Mode of (d) and TE 10n (n is an integer of 1 or more). From the view that the maximum portion of the magnetic field strength can be efficiently formed along the central axis C of the cavity resonator 11From the point of view, TM is preferred 110 Is a standing wave of (c).
At TE 10n In the case of the (n is an integer of 1 or more) mode, TE in which n=1 is most preferable 101 Mode, also TE 102 Or TE (TE) 103 A mode.
The cavity resonator 11 is generally designed so that the resonance frequency is converged into the ISM (Industry Science Medical: industrial scientific medical) band. However, if there is a mechanism that can suppress the level of electromagnetic waves radiated from the cavity resonator 11 and the entire device to the space so as not to affect the surrounding safety, communication, and the like, it is also possible to design the device at frequencies other than the ISM band.
The mounting method of the present invention can also be implemented by using a welding mounting device including the microwave heating device 10. For a specific device structure of the welding device, reference is made to, for example, fig. 4 of international publication No. 2021/095723.
[ example ]
The present invention will be described in further detail with reference to examples. These examples are for the purpose of facilitating the understanding of the present invention, and the present invention is not limited to these modes at all.
Experimental examples 1 to 1
Two 5mm square n-type silicon wafers 103 were prepared, each provided with 0.2g of solder paste 102 (Qianzhen Metal Co., ltd.: M705). One of them was placed in an aluminum foil box 104 having a thickness of 160 μm, a length of 30mm, a width of 20mm and a hole having a diameter of 1mm formed in the center of the upper portion. Both the silicon wafer 103 placed with the solder paste 102 and another silicon wafer 103 placed with the solder paste 102 (no aluminum foil case) provided in the aluminum foil case 104 are placed on the glass epoxy substrate 101 (FR-4). Fig. 4 shows a photograph showing this state. In addition, fig. 5 is an explanatory diagram schematically showing the photograph of fig. 4 and also schematically showing the state of the inside of the aluminum foil box in a perspective manner.
The glass epoxy substrate 101 is disposed at the center of the cylindrical cavity resonator. For the silicon wafer 103 (without aluminum foil box) on the glass epoxy resin substrate 101 and the silicon wafer 103 disposed in the aluminum foil boxBoth of them form a TM by introducing a 30W output microwave into a cavity resonator from the upper surface of a substrate using a thermal imaging camera 110 The temperature distribution at the standing wave of the mode was measured. The results are shown in fig. 6.
As is clear from fig. 6, the solder paste in the portion not disposed in the aluminum foil case reaches a high temperature of 221.4 ℃. In contrast, the solder paste in the aluminum foil box (in the electromagnetic wave shield) was 133 ℃, and was kept at a relatively low temperature. That is, it is known that the aluminum foil box functions as an electromagnetic wave shield. Here, as described above, a hole having a diameter of 1mm is formed in the aluminum foil case. It is considered that the microwaves do not pass through the minute holes of 1mm, but a gentle microwave heating is generated in practice. That is, it is also known that: by controlling the state of the electromagnetic wave shield, the magnetic field heating can be performed under milder conditions.
Experimental examples 1-2
An n-type silicon wafer 5mm square, provided with 0.2g of solder paste 102 (Qianzhen Metal Co., ltd.: M705), was placed in an aluminum foil box 104 having a thickness of 160 μm, a length of 30mm, a width of 20mm, and a hole having a diameter of 1mm at the upper center. Only the silicon wafer 103 placed with the solder paste 102 disposed in the aluminum foil case 104 is placed on the glass epoxy substrate 101 (FR-4). In this state, the glass epoxy substrate 101 is disposed at the center of the cylindrical cavity resonator. The microwave output at 30W was introduced into the cavity resonator to form a TM 110 The temperature distribution at the standing wave of the mode was measured. Fig. 7 shows a photograph showing the result.
As is clear from fig. 7, the solder paste disposed in the aluminum foil case reaches a high temperature of 210.7 ℃. That is, it is known that magnetic field energy acts intensively on the solder resist 102 in the aluminum foil case.
Experimental example 2-1
Two 5mm square n-type silicon wafers 103 were prepared, each provided with 0.2g of solder paste 102 (Qianzhen Metal Co., ltd.: M705). One of them was placed in a copper plate box 105 having a thickness of 100 μm, a length of 30mm, a width of 20mm and a hole having a diameter of 1mm formed in the center of the upper portion. Will be arranged atBoth the silicon wafer having the solder paste 102 placed therein and the other silicon wafer 103 having the solder paste 102 placed therein (no copper box) are placed on the glass epoxy substrate 101 (FR-4). In this state, the glass epoxy substrate 101 is disposed at the center of the cylindrical cavity resonator. The microwave output at 30W was introduced into the cavity resonator to form a TM 110 The temperature distribution at the standing wave of the mode was measured. The results are shown in fig. 8.
As is clear from fig. 8, the solder paste in the portion not disposed in the copper plate case 105 reaches a high temperature of 169.6 ℃. In contrast, the solder paste in the copper plate case 105 (in the electromagnetic wave shield) was gently heated to 71.2 ℃. That is, the copper plate case 105 is known to function as an electromagnetic wave shield. Here, as described above, a hole having a diameter of 1mm is formed in the copper box. It is considered that the microwaves do not pass through the minute holes of 1mm, but a gentle microwave heating is generated in practice. That is, it is also known that: by controlling the state of the electromagnetic wave shield, the magnetic field heating can be performed under milder conditions.
Experimental examples 2-2
An n-type silicon wafer 5mm square, provided with 0.2g of solder paste 102 (Qianzhen Metal Co., ltd.: M705), was placed in a copper plate box 105 having a thickness of 100 μm, a length of 30mm, a width of 20mm, and a hole having a diameter of 1mm at the upper center. Only the silicon wafer placed with the solder paste 102 disposed in the copper plate case 105 is placed on the glass epoxy substrate 101 (FR-4). In this state, the glass epoxy substrate 101 is disposed at the center of the cylindrical cavity resonator. The microwave output at 30W was introduced into the cavity resonator to form a TM 110 The temperature distribution at the standing wave of the mode was measured. The results are shown in fig. 9.
As is clear from fig. 9, in a state where there is no solder paste portion where the copper plate case is not provided, the solder paste disposed in the copper plate case is heated to 187.8 ℃. That is, it is known that magnetic field energy acts intensively on the solder resist in the copper box.
As is clear from the results of the above experimental examples, by combining magnetic field heating by a standing wave of microwaves with a local electromagnetic wave shield and appropriately adjusting the irradiation energy of microwaves, the heating state of a plurality of solder parts during soldering and mounting can be freely controlled for each solder part.
While the invention has been illustrated in connection with embodiments thereof, it should be understood that the invention is not limited to any details of the description, unless specifically indicated by the inventors, but rather should be construed broadly without departing from the spirit and scope of the invention as set forth in the appended claims.
The present application claims priority based on japanese patent application publication No. 2021-116207, filed in japan at 7 months 14 of 2021, the contents of which are incorporated herein by reference as part of the description of the present specification.
Description of the reference numerals
1. Substrate material
2. Solder material
3. Electronic component
4. Electromagnetic wave shield
5. Microwave wave
10. Microwave heating device
11. Cavity resonator
12. An inlet
13. An outlet
14. Microwave supply port
15. Window
21. Microwave generator
22. Microwave amplifier
23. Isolator
24. Matcher
25. Antenna
26. 42, 45, 46 cable
31. Conveying mechanism
31A supply side conveying section
31B delivery side conveying section
41. Thermal image measuring device
43. Control unit
44. Electromagnetic wave sensor
50. Support body
52. Magnetic field region
A conveying direction
C cavity center shaft (center shaft)
101. Glass epoxy resin substrate
102. Solder paste
103. Silicon wafer
104. Aluminum foil box
105. Copper plate box.
Claims (10)
1. An electronic component mounting method, wherein the electronic component mounting method comprises: irradiating the substrate for mounting the electronic component with microwaves in a state in which the electromagnetic wave shield is applied to a part of the solder parts, heating and melting at least the solder parts to which the electromagnetic wave shield is not applied by the action of a magnetic field of a standing wave formed by the microwave irradiation,
The electronic component mounting board includes:
a substrate;
the plurality of solder portions on the substrate; and
and a plurality of electronic components disposed so as to be in contact with the plurality of solder portions in correspondence with the plurality of solder portions.
2. The method for mounting an electronic component according to claim 1, wherein,
the solder portion of the plurality of solder portions to which the electromagnetic wave shield is not applied is heated and melted by an action of the magnetic field of the standing wave, and then the solder portion of the plurality of solder portions to which the electromagnetic wave shield is applied is heated and melted under a heating condition that is milder than a heating condition of the solder portion to which the electromagnetic wave shield is not applied.
3. The method for mounting an electronic component according to claim 1, wherein,
the solder portion of the plurality of solder portions to which the electromagnetic wave shield is not applied is heated and melted by the action of the magnetic field of the standing wave, and the solder portion of the plurality of solder portions to which the electromagnetic wave shield is applied is also heated and melted under heating conditions that are milder than the heating conditions of the solder portion to which the electromagnetic wave shield is not applied by the action of the magnetic field of the standing wave.
4. The method for mounting an electronic component according to claim 2 or 3, wherein,
the solder portion to which the electromagnetic wave shield is applied among the plurality of solder portions uses low-temperature solder.
5. The method for mounting an electronic component according to any one of claims 1 to 4, wherein,
the base material has an electrode portion, and the electronic component also has an electrode portion, and the solder portion after heating and melting is solidified, and the electrode portion of the base material and the electrode portion of the electronic component are electrically connected via the solidified solder portion.
6. The method for mounting an electronic component according to any one of claims 1 to 5, wherein,
the electromagnetic wave shield includes a metallic material.
7. The method for mounting an electronic component according to any one of claims 1 to 6, wherein,
the standing wave is TM n10 A mode in which n is an integer of 1 or more, or the standing wave is TE 10n Mode, wherein n is an integer of 1 or more.
8. A partial shielding substrate for electronic component mounting, wherein the partial shielding substrate for electronic component mounting has:
a substrate;
a plurality of solder portions on the substrate; and
a plurality of electronic components arranged in such a manner as to be in contact with the plurality of solder portions in correspondence with the plurality of solder portions,
The partial shielding substrate for mounting electronic components is formed by applying electromagnetic wave shielding material to a part of the solder parts.
9. The partial shielding substrate for electronic component mounting according to claim 8, wherein,
at least the solder portion to which the electromagnetic wave shield is not applied is heated and melted by the action of the magnetic field of the standing wave of the microwaves.
10. The partial shielding substrate for electronic component mounting according to claim 8 or 9, wherein,
the solder portion to which the electromagnetic wave shield is applied contains low-temperature solder.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021-116207 | 2021-07-14 | ||
| JP2021116207 | 2021-07-14 | ||
| PCT/JP2022/019387 WO2023286426A1 (en) | 2021-07-14 | 2022-04-28 | Method for mounting electronic component and partial shield substrate for electronic component mounting |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117356175A true CN117356175A (en) | 2024-01-05 |
Family
ID=84919303
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202280036849.7A Pending CN117356175A (en) | 2021-07-14 | 2022-04-28 | Method for mounting electronic component and local shielding substrate for mounting electronic component |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPWO2023286426A1 (en) |
| KR (1) | KR20240035790A (en) |
| CN (1) | CN117356175A (en) |
| TW (1) | TW202304286A (en) |
| WO (1) | WO2023286426A1 (en) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0738992U (en) * | 1993-12-24 | 1995-07-14 | セイコーエプソン株式会社 | Dial for watch with luminescent paint |
| JP2002158436A (en) * | 2000-11-16 | 2002-05-31 | Matsushita Electric Ind Co Ltd | Method for soldering circuit board |
| JP2013171863A (en) * | 2012-02-17 | 2013-09-02 | Panasonic Corp | Electronic component mounting structure and manufacturing method of the same |
| CN107535081B (en) * | 2015-05-11 | 2021-02-02 | 株式会社村田制作所 | High frequency module |
| JP7241379B2 (en) * | 2018-02-08 | 2023-03-17 | 国立研究開発法人産業技術総合研究所 | Solder mounting method and microwave heating device |
| US20220402058A1 (en) | 2019-11-15 | 2022-12-22 | National Institute Of Advanced Industrial Science And Technology | Mounting wiring board, electronic device mounting board, method of mounting electronic device, microwave heating method, and microwave heating apparatus |
-
2022
- 2022-04-28 WO PCT/JP2022/019387 patent/WO2023286426A1/en active Application Filing
- 2022-04-28 KR KR1020247001261A patent/KR20240035790A/en active Search and Examination
- 2022-04-28 CN CN202280036849.7A patent/CN117356175A/en active Pending
- 2022-04-28 JP JP2023535150A patent/JPWO2023286426A1/ja active Pending
- 2022-05-04 TW TW111116763A patent/TW202304286A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| KR20240035790A (en) | 2024-03-18 |
| TW202304286A (en) | 2023-01-16 |
| JPWO2023286426A1 (en) | 2023-01-19 |
| WO2023286426A1 (en) | 2023-01-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5836144B2 (en) | Microwave radiation mechanism and surface wave plasma processing equipment | |
| JP6010406B2 (en) | Microwave radiation mechanism, microwave plasma source, and surface wave plasma processing apparatus | |
| JP7241379B2 (en) | Solder mounting method and microwave heating device | |
| US11883789B2 (en) | Microwave heating method, microwave heating apparatus, and chemical reaction method | |
| EP1796830A2 (en) | Microwave chemical reactor | |
| JP7145500B2 (en) | Microwave treatment device, microwave treatment method, heat treatment method and chemical reaction method | |
| JP2020173958A (en) | Microwave heating device and microwave heating method | |
| CN117356175A (en) | Method for mounting electronic component and local shielding substrate for mounting electronic component | |
| WO2019156142A1 (en) | Microwave heating method, microwave heating device, and chemical reaction method | |
| WO2021095723A1 (en) | Mounting wiring board, electronic component mounted board, method of mounting electronic component, microwave heating method, and microwave heating device | |
| JP7389444B2 (en) | Microwave heating device, heating method and chemical reaction method | |
| JP2019140213A (en) | Thin film pattern-firing method and microwave-firing device | |
| JP2005203709A5 (en) | ||
| JP6971812B2 (en) | Microwave processing equipment, microwave processing method, heat treatment method and chemical reaction method | |
| JP5890204B2 (en) | Slag tuner, microwave plasma source using the same, and microwave plasma processing apparatus | |
| WO2013145916A1 (en) | Microwave irradiating antenna, microwave plasma source, and plasma processing device | |
| KR100701359B1 (en) | Method and apparatus for forming insulating layer | |
| JP2005243650A (en) | Slot array antenna and plasma processing apparatus | |
| JP2011060637A (en) | Microwave irradiation device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |