CN117352488A - Radio frequency transition structure based on wafer level fan-out packaging - Google Patents

Radio frequency transition structure based on wafer level fan-out packaging Download PDF

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Publication number
CN117352488A
CN117352488A CN202311476719.8A CN202311476719A CN117352488A CN 117352488 A CN117352488 A CN 117352488A CN 202311476719 A CN202311476719 A CN 202311476719A CN 117352488 A CN117352488 A CN 117352488A
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CN
China
Prior art keywords
rewiring
radio frequency
level fan
signal
solder balls
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202311476719.8A
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Chinese (zh)
Inventor
刘帅
张凯
李航标
张然
刘智卿
赵晓冬
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CETC 10 Research Institute
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CETC 10 Research Institute
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Publication date
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Priority to CN202311476719.8A priority Critical patent/CN117352488A/en
Publication of CN117352488A publication Critical patent/CN117352488A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
    • H01L23/5286—Arrangements of power or ground buses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

The invention relates to the technical field of radio frequency electrical interconnection, and particularly discloses a radio frequency transition structure based on wafer-level fan-out packaging, which comprises a radio frequency chip, a rewiring wiring structure, a rewiring metal ground wire, a signal transmission metal solder ball and a grounding metal solder ball, wherein the rewiring wiring structure is arranged above the radio frequency chip and connected with the radio frequency chip; and the rewiring metal ground wire is connected with the radio frequency chip. The invention realizes the electrical interconnection transition of the chip radio frequency interface based on the wafer-level fan-out package rewiring structure and the ball grid array, can realize good shielding of signals, and is beneficial to the integrated application of the package in a system.

Description

Radio frequency transition structure based on wafer level fan-out packaging
Technical Field
The invention relates to the technical field of radio frequency electrical interconnection, in particular to a radio frequency transition structure based on wafer-level fan-out packaging.
Background
With the development of radio frequency integrated circuits, the functions of on-chip integration of radio frequency chips are increasing, and the number of corresponding chips I/Q is also increasing. In particular, in recent years, the integration level of the radio frequency chip in the planar phased array antenna based on the AIP (Antenna in Package) architecture is greatly improved, and higher requirements are also put forward on the packaging integration of the radio frequency chip.
Packaging technology based on traditional two-dimensional plane expansion is difficult to realize packaging integration of high-density I/Q interfaces, and the requirements of practical application scenes cannot be met. The wafer level Fan-out packaging mode replaces the traditional substrate with the rewiring layer, the purpose of removing the substrate is achieved, meanwhile, the wafer level rewiring line width, line spacing and transmission path are far smaller than those of the traditional substrate, the requirements of low delay and structural miniaturization on the performance of a radio frequency chip can be met, and packaging integration of pins with higher density of chips can be supported.
The forefront company that applies wafer level fan-out encapsulation to radio frequency band product is Ying fei Ling, and typical application is the transceiver module in 77GHz car radar, has realized the good electrical interconnection transition of chip radio frequency interface in this product. However, in the radio frequency millimeter wave phased array antenna, the use requirement cannot be met by only realizing good electrical transition of the chip radio frequency interface.
For example, in phased array antennas, packages of radio frequency chips are arranged in an array on the antenna. Along with the increase of frequency, the space between antenna array elements is smaller and smaller, the space between radio frequency interfaces between different radio frequency packages is correspondingly reduced, the signal coupling between the radio frequency interfaces is stronger, and the abnormal function of the antenna can be directly caused in severe cases. In the existing wafer-level fan-out packaging scheme, the transition of radio frequency is generally realized by adopting a BGA interface form of GSG, the isolation between interfaces is not considered in a chip radio frequency interface transition structure, and the signal shielding effect is poor.
Disclosure of Invention
The invention aims to solve the technical problem of providing a radio frequency transition structure based on wafer-level fan-out packaging, which realizes the electrical interconnection transition of a chip radio frequency interface based on the wafer-level fan-out packaging rewiring structure and a ball grid array, can realize good shielding on signals and is beneficial to the integrated application of the packaging in a system;
the invention solves the technical problems by adopting the following solution:
the radio frequency transition structure comprises a radio frequency chip, a rewiring wiring structure, a rewiring metal ground wire, a signal transmission metal solder ball and a grounding metal solder ball, wherein the rewiring wiring structure is arranged above the radio frequency chip and connected with the radio frequency chip, the rewiring metal ground wire is arranged on the same layer as the rewiring wiring structure and is arranged on the outer side of the rewiring wiring structure, the signal transmission metal solder ball is arranged on the rewiring wiring structure, and the grounding metal solder ball is arranged on the rewiring metal ground wire; and the rewiring metal ground wire is connected with the radio frequency chip.
In some of the possible embodiments of the present invention,
the rewiring wiring structure comprises a rewiring high-impedance matching wire, a rewiring low-impedance matching wire and a rewiring isolating ring which are connected in sequence; the other end of the rewiring high-impedance matching wire is connected with the radio frequency chip; the signal transmission metal solder balls are arranged on the rewiring isolation ring.
In some of the possible embodiments of the present invention,
a signal pad and a grounding pad are arranged on the radio frequency chip; the signal pad is connected with a rewiring high-impedance matching line; the grounding pads are two groups and are connected with the rewiring metal ground wire.
In some of the possible embodiments of the present invention,
the grounding pads are in two groups, the signal pads are in one group, and the two groups of grounding pads are arranged between the two groups of grounding pads; the ground pad is interconnected with the rewiring high-impedance matching line through a signal interconnection hole, and the ground pad is interconnected with the rewiring metal ground wire through a ground interconnection hole.
In some of the possible embodiments of the present invention,
the diameter of the grounding interconnection hole is smaller than the side length of the grounding pad; the diameter of the signal interconnection hole is smaller than the side length of the signal bonding pad.
In some of the possible embodiments of the present invention,
the rewiring high-impedance matching line has a characteristic impedance greater than 50Ω and a line width greater than the diameter of the signal interconnect hole.
In some of the possible embodiments of the present invention,
the rewiring low-impedance matching line has a characteristic impedance less than 50Ω and a line width greater than that of the rewiring high-impedance matching line.
In some of the possible embodiments of the present invention,
the grounding metal solder balls are multiple groups, the signal transmission metal solder balls are one group, and the multiple groups of grounding metal solder balls are respectively arranged on the outer sides of the signal transmission metal solder balls and are matched to form a BGA coaxial structure.
In some of the possible embodiments of the present invention,
the rewiring metal ground wire is a metal surface with a groove, and an opening of the groove is arranged on one side close to the radio frequency chip; the rewiring wiring structure is located in the groove.
In some of the possible embodiments of the present invention,
the packaging shell is used for installing the radio frequency chip, rewiring the wiring structure, rewiring the metal ground wiring, transmitting the signal to the metal solder balls and grounding the metal solder balls; the signal transmission metal solder balls and the grounding metal solder balls are positioned on the outer side of the packaging shell.
Compared with the prior art, the invention has the beneficial effects that:
the invention realizes the radio frequency transition structure with good radio frequency transmission characteristic and good signal shielding by using the wafer-level fan-out process; impedance matching is realized by adopting a rewiring wiring structure, flexible design can be carried out according to the requirements of different application frequencies, and good transmission of radio frequency signals is realized;
the BGA coaxial structure is adopted as a signal output interface, so that good shielding can be realized on signals, and the integrated application of the package in a system is facilitated;
the invention can be applied to the radio frequency fields of millimeter waves, microwaves and the like, and is beneficial to promoting the application of the wafer-level fan-out packaging technology in the radio frequency field.
Drawings
FIG. 1 is an exploded view of the present invention;
FIG. 2 is a top view of the present invention;
FIG. 3 is a schematic diagram showing the structural relationship of the grounding metal solder balls, the signal transmission metal solder balls and the package shell according to the present invention;
FIG. 4 is a side view of the present invention;
FIG. 5 is a simulation plot of S-parameters of the present invention;
FIG. 6 is a comparative simulation of port shielding characteristics of the present invention versus a conventional GSG transition structure;
wherein: 1. a radio frequency chip; 2. a ground pad; 3. a signal pad; 4. a ground interconnecting hole; 5. a signal interconnection hole; 6. a wafer level fan-out package housing; 7. rewiring the high impedance match line; 8. rewiring the low impedance match line; 9. wiring the isolating ring again; 10. wiring the metal ground wire again; 11. signal transmission metal solder balls; 12. and grounding the metal solder balls.
Detailed Description
In the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. Reference to "first," "second," and similar terms in this application does not denote any order, quantity, or importance, but rather are used to distinguish one element from another. Likewise, the terms "a" or "an" and the like do not denote a limitation of quantity, but rather denote the presence of at least one. In the implementation of the present application, "and/or" describes an association relationship of an association object, which means that there may be three relationships, for example, a and/or B may mean: a exists alone, A and B exist together, and B exists alone. In the description of the embodiments of the present application, unless otherwise indicated, the meaning of "a plurality" means two or more. For example, a plurality of positioning posts refers to two or more positioning posts. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
The present invention will be described in detail below.
As shown in fig. 1-4:
the radio frequency transition structure based on the wafer level fan-out package comprises a radio frequency chip 1, a grounding interconnection hole 4, a signal interconnection hole 5, a wafer level fan-out package shell 6, a high-impedance match line 7, a low-impedance match line 8, a spacer ring 9, a metal ground wire 10, a signal transmission metal solder ball 11 and a grounding metal solder ball 12;
the radio frequency chip 1 is provided with two groups of ground pads 2 and a group of signal pads 3 in the form of GSG interfaces; the signal pad 3 is interconnected with the rewiring high-impedance matching line 7 through the signal interconnection hole 5, the rewiring low-impedance matching line 8 is interconnected with the rewiring high-impedance matching line 7, and the rewiring isolating ring 9 is interconnected with the rewiring low-impedance matching line 8;
the two groups of grounding pads 2 are respectively interconnected with a rewiring metal ground wire 10 through a grounding interconnection hole 4; the signal transmission metal solder balls 11 are welded on the rewiring isolation ring 9; the grounding metal solder balls 12 are soldered on the rewiring metal ground trace 10;
the two groups of grounding pads 2 of the radio frequency interface on the radio frequency chip 1 are respectively distributed on two sides of the signal pad 3, and the material type of the radio frequency chip 1 is not limited.
Further, the diameter of the grounding interconnection hole 4 is smaller than the side length of the grounding pad 2; the diameter of the signal interconnection hole 5 is smaller than the side length of the signal pad 3.
The characteristic impedance of the rewiring high-impedance matching line 7 is larger than 50Ω, and the line width is larger than the diameter of the signal interconnection hole 5; the rewiring low-impedance matching line 8 has a characteristic impedance of less than 50Ω and a line width greater than that of the rewiring high-impedance matching line 7; the rewiring high-impedance matching line 7 and the rewiring low-impedance matching line 8 form a high-low impedance matching structure, impedance matching is achieved in a designed frequency range, reflection of radio frequency signals can be effectively reduced, and good transmission of the radio frequency signals is achieved.
The metal ground wire 10 is then wired to form a semi-closed metal surface, and a groove is formed on the side, close to the radio frequency chip 1, of the semi-closed metal surface; the rewiring high-impedance matching line 7, the rewiring low-impedance matching line 8 and the rewiring isolating ring 9 are surrounded in the middle through grooves, and the two parts form a coplanar line transmission structure.
The signal transmission metal solder balls 11 are welded on the rewiring isolating ring 9 through a ball implantation process, and the rewiring isolating ring 9 is arc-shaped; the grounding metal solder balls 12 are welded on the rewiring metal ground trace 10 through a ball mounting process, and the signal transmission metal solder balls 11 are enclosed inside to form a coaxial-like radio frequency interface.
The package 6 is a wafer level fan-out package, and is made of resin, silicon or glass.
It should be noted that the number of the grounded metal solder balls 12 is not limited to the number shown in the schematic diagram, and may be increased or decreased according to practical application requirements.
According to the invention, impedance matching is realized by using the rewiring wiring structure, and the coaxial-like external output interface is formed by the BGA metal balls, so that the radio frequency transition structure with good interconnection transition performance and good shielding property is realized.
As shown in FIG. 5, the S parameter simulation curve of the embodiment realizes that the interconnection transition return loss is smaller than-20 dB in the frequency range of 10-40GHz, and the radio frequency signal has good transmission characteristics.
FIG. 6 is a diagram showing a comparison of port shielding characteristics of the present invention with those of a conventional GSG transition structure;
in the two simulation comparisons, a pair of identical transition structures are adopted to evaluate the isolation degree respectively, and the port spacing is identical (the distance between the signal solder balls is identical); as can be seen from the graph, in the frequency range of 10-31.5GHz, compared with the prior art, the shielding performance of the shielding material is improved by more than 10 dB.
The invention is not limited to the specific embodiments described above. The invention extends to any novel one, or any novel combination, of the features disclosed in this specification, as well as to any novel one, or any novel combination, of the steps of the method or process disclosed.

Claims (10)

1. The radio frequency transition structure based on the wafer-level fan-out package is characterized by comprising a radio frequency chip, a rewiring wiring structure which is arranged above the radio frequency chip and connected with the radio frequency chip, a rewiring metal ground wire which is arranged on the same layer as the rewiring wiring structure and is arranged on the outer side of the rewiring wiring structure, signal transmission metal solder balls arranged on the rewiring wiring structure, and grounding metal solder balls arranged on the rewiring metal ground wire; and the rewiring metal ground wire is connected with the radio frequency chip.
2. The radio frequency transition structure based on wafer level fan-out packaging of claim 1, wherein the rewiring wiring structure comprises a rewiring high-impedance match line, a rewiring low-impedance match line and a rewiring isolation ring which are connected in sequence; the other end of the rewiring high-impedance matching wire is connected with the radio frequency chip; the signal transmission metal solder balls are arranged on the rewiring isolation ring.
3. The radio frequency transition structure based on the wafer level fan-out package of claim 2, wherein a signal pad and a ground pad are provided on the radio frequency chip; the signal pad is connected with a rewiring high-impedance matching line; the grounding pads are two groups and are connected with the rewiring metal ground wire.
4. The radio frequency transition structure based on wafer level fan-out packaging of claim 3, wherein the number of the grounding pads is two, the number of the signal pads is one, and the signal pads are arranged between the two groups of the grounding pads; the ground pad is interconnected with the rewiring high-impedance matching line through a signal interconnection hole, and the ground pad is interconnected with the rewiring metal ground wire through a ground interconnection hole.
5. The radio frequency transition structure based on wafer level fan-out packaging of claim 4, wherein the diameter of the ground interconnect hole is smaller than the side length of the ground pad; the diameter of the signal interconnection hole is smaller than the side length of the signal bonding pad.
6. The radio frequency transition structure based on wafer level fan out packaging of claim 4, wherein the rewiring high impedance match line has a characteristic impedance greater than 50Ω and a line width greater than the diameter of the signal interconnect hole.
7. The radio frequency transition structure based on wafer level fan out packaging of claim 4, wherein the rewiring low impedance match line has a characteristic impedance of less than 50Ω and a linewidth greater than that of the rewiring high impedance match line.
8. The radio frequency transition structure based on wafer level fan-out packaging according to any one of claims 1 to 7, wherein the number of the grounding metal solder balls is multiple, the number of the signal transmission metal solder balls is one, and the multiple grounding metal solder balls are respectively arranged on the outer sides of the signal transmission metal solder balls and are matched to form a BGA type coaxial structure.
9. The radio frequency transition structure based on the wafer level fan-out package of claim 1, wherein the rewiring metal ground trace is a metal surface with a groove, and an opening of the groove is arranged on one side close to the radio frequency chip; the rewiring wiring structure is located in the groove.
10. The radio frequency transition structure based on the wafer level fan-out package of claim 1, further comprising a package housing for mounting a radio frequency chip, a rewiring trace structure, a rewiring metal ground trace, a signal transmission metal solder ball, a ground metal solder ball; the signal transmission metal solder balls and the grounding metal solder balls are positioned on the outer side of the packaging shell.
CN202311476719.8A 2023-11-08 2023-11-08 Radio frequency transition structure based on wafer level fan-out packaging Pending CN117352488A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202311476719.8A CN117352488A (en) 2023-11-08 2023-11-08 Radio frequency transition structure based on wafer level fan-out packaging

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202311476719.8A CN117352488A (en) 2023-11-08 2023-11-08 Radio frequency transition structure based on wafer level fan-out packaging

Publications (1)

Publication Number Publication Date
CN117352488A true CN117352488A (en) 2024-01-05

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202311476719.8A Pending CN117352488A (en) 2023-11-08 2023-11-08 Radio frequency transition structure based on wafer level fan-out packaging

Country Status (1)

Country Link
CN (1) CN117352488A (en)

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