CN117352411B - Wafer point calibration method and device based on semiconductor manufacturing and electronic equipment - Google Patents

Wafer point calibration method and device based on semiconductor manufacturing and electronic equipment Download PDF

Info

Publication number
CN117352411B
CN117352411B CN202311297816.0A CN202311297816A CN117352411B CN 117352411 B CN117352411 B CN 117352411B CN 202311297816 A CN202311297816 A CN 202311297816A CN 117352411 B CN117352411 B CN 117352411B
Authority
CN
China
Prior art keywords
axis
pressure detection
detection
axis pressure
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202311297816.0A
Other languages
Chinese (zh)
Other versions
CN117352411A (en
Inventor
张敏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen Yiyuan Technology Co ltd
Original Assignee
Shenzhen Yiyuan Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen Yiyuan Technology Co ltd filed Critical Shenzhen Yiyuan Technology Co ltd
Priority to CN202311297816.0A priority Critical patent/CN117352411B/en
Publication of CN117352411A publication Critical patent/CN117352411A/en
Application granted granted Critical
Publication of CN117352411B publication Critical patent/CN117352411B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The application relates to the technical field of wafer point calibration, and provides a wafer point calibration method and device based on semiconductor manufacturing and electronic equipment. The wafer calibrating method based on semiconductor manufacturing comprises the following steps: controlling the calibration point mounting plate to move towards the wafer detection mounting plate; acquiring detection data of a first Y-axis pressure detection part, a second Y-axis pressure detection part and a Z-axis pressure detection part; determining that the first Y-axis pressure detecting portion, the second Y-axis pressure detecting portion, and the Z-axis pressure detecting portion each detect a pressure based on the detection data; acquiring coordinate data of a first Y-axis pressure detection part, a second Y-axis pressure detection part and a Z-axis pressure detection part; and determining the correction point coordinate parameters based on the coordinate data. According to the wafer point calibration method based on semiconductor manufacturing, the intelligent degree of wafer point calibration is improved, and deviation of acquired point calibration coordinate parameters can be effectively avoided.

Description

Wafer point calibration method and device based on semiconductor manufacturing and electronic equipment
Technical Field
The present application relates to the field of wafer calibration technologies, and in particular, to a wafer calibration method and apparatus based on semiconductor manufacturing, and an electronic device.
Background
Wafer rewinding machines are important equipment in the manufacture of semiconductor integrated circuits, and rewinding is a necessary process in the semiconductor manufacturing process. In semiconductor manufacturing, the product types are numerous, the process is complex, certain differences exist between the wafer boxes and the specifications of wafers of different manufacturers, and in order to ensure the accuracy of the wafer taking position of the mechanical arm, the wafer rewinding machine needs to perform spot calibration operation after being installed on site.
In the related art, whether the point calibration tool is contacted with the wafer is mainly observed manually, the point calibration coordinate parameters are acquired after the point calibration tool is manually observed and determined to be contacted with the wafer, the intelligent degree is low, and the acquired point calibration coordinate parameters may have deviation.
Disclosure of Invention
The present application is directed to solving at least one of the technical problems existing in the related art. Therefore, the application provides the wafer point calibration method based on semiconductor manufacture, which improves the intelligentization degree of wafer point calibration and can effectively avoid deviation of acquired point calibration coordinate parameters.
According to an embodiment of the first aspect of the application, a wafer aligning method based on semiconductor manufacturing comprises the following steps:
controlling the calibration point mounting plate to move towards the wafer detection mounting plate;
Acquiring detection data of a first Y-axis pressure detection part, a second Y-axis pressure detection part and a Z-axis pressure detection part;
determining, based on the detection data, that the first Y-axis pressure detection portion, the second Y-axis pressure detection portion, and the Z-axis pressure detection portion each detect a pressure;
Acquiring coordinate data of the first Y-axis pressure detection part, the second Y-axis pressure detection part and the Z-axis pressure detection part;
and determining the correction point coordinate parameters based on the coordinate data.
According to the wafer calibration method based on the semiconductor manufacturing, the calibration mounting plate is controlled to move towards the wafer detection mounting plate, and meanwhile, detection data of the first Y-axis pressure detection part, the second Y-axis pressure detection part and the Z-axis pressure detection part are obtained, when the fact that the first Y-axis pressure detection part, the second Y-axis pressure detection part and the Z-axis pressure detection part detect pressures is determined, the fact that the first Y-axis detection block is abutted to the first Y-axis pressure detection part is explained, the second Y-axis detection block is abutted to the second Y-axis pressure detection part is explained, the fact that the Z-axis detection block is abutted to the Z-axis pressure detection part is explained, and when the fact that the calibration mounting plate moves to the calibration position is explained, coordinate data of the first Y-axis pressure detection part, the second Y-axis pressure detection part and the Z-axis pressure detection part are obtained, the Z-axis coordinates at the moment are Z values in the calibration coordinate parameters are obtained, the fact that Y-axis coordinates and U-axis coordinates and Y-axis coordinates and U-axis coordinates in the calibration coordinate parameters at the moment can be determined based on the fact that the first Y-axis detection block and the second Y-axis detection block are abutted to the first Y-axis detection block and the Z-axis detection block are not needed, and whether the calibration parameters are abutted to the intelligent calibration point detection parameters can be achieved is achieved, and whether the calibration of the calibration position is achieved, and the intelligent calibration parameters is achieved, and the calibration of the calibration parameters is prevented from being abutted to the intelligent.
According to one embodiment of the application, the control calibration point mounting plate moves toward the wafer inspection mounting plate, comprising:
acquiring signal detection data of a signal detection piece at the Z-axis pressure detection part, wherein the signal detection piece is used for detecting the signal intensity of a signal source at the Z-axis detection block;
And controlling the movement of the calibration point mounting plate based on the signal detection data.
According to one embodiment of the present application, the controlling the movement of the calibration point mounting board based on the signal detection data includes:
Comparing the plurality of signal detection data acquired within a preset time length, and determining that the signal strength detected by the target signal detection data is maximum;
And controlling the movement of the calibration point mounting plate based on the target signal detection data.
According to one embodiment of the present application, after acquiring the detection data of the first Y-axis pressure detecting section, the second Y-axis pressure detecting section, and the Z-axis pressure detecting section, the method includes:
determining that the first Y-axis pressure detection portion and the second Y-axis pressure detection portion do not detect pressure, and determining that the Z-axis pressure detection portion detects pressure;
Controlling the calibration point mounting plate to move along the U axis, so that the first Y axis detection block is abutted with the first Y axis pressure detection part, and the second Y axis detection block is abutted with the second Y axis pressure detection part;
determining that the first Y-axis pressure detection portion and the second Y-axis pressure detection portion both detect pressures;
Acquiring coordinate data of the first Y-axis pressure detection part, the second Y-axis pressure detection part and the Z-axis pressure detection part;
and determining the correction point coordinate parameters based on the coordinate data.
According to a second aspect of the present application, a wafer spot calibration apparatus based on semiconductor manufacturing is applied to a rewinding machine, the rewinding machine includes a wafer table, and the apparatus includes:
The correction assembly comprises a correction mounting plate, a first Y-axis detection block, a second Y-axis detection block and a Z-axis detection block, wherein the first Y-axis detection block and the second Y-axis detection block are piled up and arranged relative to the Z-axis detection block, the upper surfaces of the first Y-axis detection block, the second Y-axis detection block and the Z-axis detection block are all on the same plane, the first Y-axis detection block and the second Y-axis detection block are arranged at the first end of the correction mounting plate, the Z-axis detection block is arranged at the correction mounting plate, the Z-axis detection block is farther away from the first end of the correction mounting plate relative to the first Y-axis detection block and the second Y-axis detection block, and the second end of the correction mounting plate is suitable for bearing an external force so that the correction mounting plate moves under the driving of the external force;
The wafer detection assembly is arranged on the wafer table and comprises a wafer detection mounting plate, a first Y-axis pressure detection part, a second Y-axis pressure detection part and a Z-axis pressure detection part, wherein the first Y-axis pressure detection part and the second Y-axis pressure detection part are symmetrically arranged relative to the Z-axis pressure detection part, the lower surfaces of the first Y-axis pressure detection part, the second Y-axis pressure detection part and the Z-axis pressure detection part are all on the same plane, the first Y-axis pressure detection part and the second Y-axis pressure detection part are arranged at the first end of the wafer detection mounting plate, the Z-axis pressure detection part is arranged at the wafer detection mounting plate, and the Z-axis pressure detection part is farther away from the first end of the wafer detection mounting plate relative to the first Y-axis pressure detection part and the second Y-axis pressure detection part;
The Z-axis pressure detection device comprises a Z-axis detection block, a controller and a Z-axis pressure detection part, wherein the Z-axis detection block is provided with a signal source, the Z-axis pressure detection part is provided with a signal detection part, the signal detection part is suitable for detecting the signal intensity of the signal source, and the signal detection part is electrically connected with the controller.
According to one embodiment of the application, the wafer calibrating device based on semiconductor manufacturing comprises a calibrating component, wherein the calibrating component is used for calibrating the movement of the calibrating mounting plate, the calibrating component comprises a first Y-axis calibrating piece, a second Y-axis calibrating piece and a Z-axis calibrating piece, the first Y-axis calibrating piece is arranged between the first Y-axis pressure detecting part and the end part of the first end of the wafer detecting mounting plate, the second Y-axis calibrating piece is arranged between the second Y-axis pressure detecting part and the end part of the first end of the wafer detecting mounting plate, the Z-axis calibrating piece is arranged between the Z-axis pressure detecting part and the first Y-axis pressure detecting part, and the connecting lines of the first Y-axis calibrating piece and the first Y-axis pressure detecting part, the connecting lines of the second Y-axis calibrating piece and the second Y-axis pressure detecting part and the connecting lines of the Z-axis calibrating piece and the Z-axis pressure detecting part are parallel to each other.
According to one embodiment of the application, the first Y-axis calibration piece is provided with a transverse opening, the second Y-axis calibration piece is provided with a vertical opening, the Z-axis calibration piece is provided with an inclined opening, the extending direction of the transverse opening is mutually perpendicular to the extending direction of the vertical opening, and the extending direction of the vertical opening forms an included angle of 45 degrees with the extending direction of the inclined opening;
The shape of the first Y-axis detection block is matched with the transverse opening, the shape of the second Y-axis detection block is matched with the vertical opening, and the shape of the Z-axis detection block is matched with the shape of the inclined opening.
According to one embodiment of the application, the wafer calibrating device based on semiconductor manufacturing comprises a triaxial driving element, wherein the triaxial driving element is connected with the calibrating component and is used for driving the calibrating component to move along a Z axis or a Y axis or an X axis.
An electronic device according to an embodiment of the third aspect of the present application includes a memory, a processor, and a computer program stored on the memory and executable on the processor, wherein the processor implements the above-mentioned wafer calibration method based on semiconductor manufacturing when executing the computer program.
Additional aspects and advantages of the application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the application.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the related art, the drawings that are required to be used in the embodiments or the related technical descriptions will be briefly described, and it is apparent that the drawings in the following description are only some embodiments of the present application, and other drawings may be obtained according to the drawings without inventive effort for those skilled in the art.
FIG. 1 is a schematic diagram of a wafer alignment device based on semiconductor manufacturing according to an embodiment of the present application;
FIG. 2 is a schematic diagram of a second embodiment of a wafer alignment apparatus based on semiconductor manufacturing according to the present application;
FIG. 3 is a flow chart of a method for calibrating a wafer based on semiconductor manufacturing according to the present application;
fig. 4 is a schematic structural diagram of an electronic device provided by the present application.
Detailed Description
Embodiments of the present application are described in further detail below with reference to the accompanying drawings and examples. The following examples are illustrative of the application but are not intended to limit the scope of the application.
In the description of the embodiments of the present application, it should be noted that the terms "center", "longitudinal", "lateral", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are merely for convenience in describing the embodiments of the present application and simplifying the description, and do not indicate or imply that the apparatus or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the embodiments of the present application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In describing embodiments of the present application, it should be noted that, unless explicitly stated and limited otherwise, the terms "coupled," "coupled," and "connected" should be construed broadly, and may be either a fixed connection, a removable connection, or an integral connection, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium. The specific meaning of the above terms in embodiments of the present application will be understood in detail by those of ordinary skill in the art.
In embodiments of the application, unless expressly specified and limited otherwise, a first feature "up" or "down" on a second feature may be that the first and second features are in direct contact, or that the first and second features are in indirect contact via an intervening medium. Moreover, a first feature being "above," "over" and "on" a second feature may be a first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is level higher than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is less level than the second feature.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the embodiments of the present application. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, the different embodiments or examples described in this specification and the features of the different embodiments or examples may be combined and combined by those skilled in the art without contradiction.
The wafer dotting method, the wafer dotting device and the electronic equipment based on the semiconductor manufacture are described below with reference to fig. 1 to 4.
According to an embodiment of the first aspect of the present application, as shown in fig. 1 and 2, a wafer aligning device based on semiconductor manufacturing is mainly applied to a rewinding machine, the rewinding machine includes a wafer table, and the wafer aligning device based on semiconductor manufacturing includes:
The correction assembly comprises a correction mounting plate 1, a first Y-axis detection block 2, a second Y-axis detection block 3 and a Z-axis detection block 4, wherein the first Y-axis detection block 2 and the second Y-axis detection block 3 are piled up relative to the Z-axis detection block 4, the upper surfaces of the first Y-axis detection block 2, the second Y-axis detection block 3 and the Z-axis detection block 4 are all on the same plane, the first Y-axis detection block 2 and the second Y-axis detection block 3 are arranged at the first end of the correction mounting plate 1, the Z-axis detection block 4 is arranged at the correction mounting plate 1, the Z-axis detection block 4 is farther away from the first end of the correction mounting plate 1 relative to the first Y-axis detection block 2 and the second Y-axis detection block 3, and the second end of the correction mounting plate 1 is suitable for bearing external force so that the correction mounting plate 1 moves under the drive of the external force;
the wafer detection assembly is arranged on the wafer table and comprises a wafer detection mounting plate 5, a first Y-axis pressure detection part 6, a second Y-axis pressure detection part 7 and a Z-axis pressure detection part 8, wherein the first Y-axis pressure detection part 6 and the second Y-axis pressure detection part 7 are symmetrically arranged relative to the Z-axis pressure detection part 8, the lower surfaces of the first Y-axis pressure detection part 6, the second Y-axis pressure detection part 7 and the Z-axis pressure detection part 8 are all on the same plane, the first Y-axis pressure detection part 6 and the second Y-axis pressure detection part 7 are mounted at the first end of the wafer detection mounting plate 5, the Z-axis pressure detection part 8 is mounted on the wafer detection mounting plate 5, and the Z-axis pressure detection part 8 is farther away from the first end of the wafer detection mounting plate 5 relative to the first Y-axis pressure detection part 6 and the second Y-axis pressure detection part 7;
The Z-axis detection block 4 is provided with a signal source, the Z-axis pressure detection part 8 is provided with a signal detection part, the signal detection part is suitable for detecting the signal intensity of the signal source, and the signal detection part is electrically connected with the controller.
According to the wafer point calibration device based on semiconductor manufacturing, the second end of the point calibration mounting plate 1 is applied with external force, so that the point calibration mounting plate 1 can move. When the calibration operation is carried out, the calibration mounting plate 1 is driven to move to a preset calibration point position through external force, then the calibration mounting plate 1 is continuously driven to move, at this time, the signal source can be detected through the signal detection piece, when the signal source is closer to the signal detection piece, the signal intensity detected by the signal detection piece is larger, and then the movement of the calibration mounting plate 1 in the direction of signal enhancement can be controlled according to the detection result of the signal detection piece, so that the movement guide of the calibration mounting plate 1 is realized, the Z-axis detection block 4 and the Z-axis pressure detection part 8 are quickly abutted, at this time, the first Y-axis detection block 2 is close to the first Y-axis pressure detection part 6 even if not abutted to the first Y-axis pressure detection part 6, and the second Y-axis detection block 3 is close to the second Y-axis pressure detection part 7 even if not abutted to the second Y-axis pressure detection part 7, and only slight adjustment is needed, so that the first Y-axis detection block 2 and the first Y-axis pressure detection part 6 are abutted to the second Y-axis detection block 3 and the second Y-axis pressure detection part 7 are abutted to each other, and the calibration point is simpler. After the Z-axis detection block 4 and the Z-axis pressure detection unit 8 are abutted, the Z-axis pressure detection unit 8 detects pressure, after the first Y-axis detection block 2 is abutted with the first Y-axis pressure detection unit 6, the first Y-axis pressure detection unit 6 detects pressure, after the second Y-axis detection block 3 is abutted with the second Y-axis pressure detection unit 7, the second Y-axis pressure detection unit 7 detects pressure, and the positions of the first Y-axis detection block 2, the second Y-axis detection block 3 and the Z-axis detection block 4 can be determined based on the detection data of the first Y-axis pressure detection unit 6, the second Y-axis detection block 3 and the Z-axis detection unit 8, when the first Y-axis detection block 2 is determined to be abutted with the first Y-axis pressure detection unit 6, the second Y-axis detection block 3 is detected to be abutted with the second Y-axis pressure detection unit 7, and the obtained Z-axis coordinates of the Z-axis detection block 4 at this time are the Z-axis coordinates of the calibration point, and the calibration point value can be determined based on the value of the first Y-axis detection block 2 and the value of the calibration point. And then need not the manual work and judge whether the detection piece is with pressure detection portion butt, realized improving the intelligent degree of wafer school point, can effectually avoid the school point coordinate parameter that obtains to appear the deviation.
It will be appreciated that an external force may be applied to the second end of the calibration point mounting plate 1 by a driving means such as a robot.
It is to be understood that the Y value and the U value in the calibration point coordinate parameter may be determined based on the coordinates of the first Y-axis detection block 2 and the second Y-axis detection block 3 at this time, the Y value and the U value in the calibration point coordinate parameter may be determined based on the coordinates of the intermediate point of the line connecting the first Y-axis detection block 2 and the second Y-axis detection block 3, and the Y value and the U value in the calibration point coordinate parameter may be determined based on the coordinates of the first Y-axis detection block 2 and the second Y-axis detection block 3.
It should be noted that, the end of the wafer inspection mounting board 5 near the calibration point mounting board 1 is in an arc structure, and the wafer inspection mounting board 5 may also be in a circular structure.
In one embodiment of the present application, the wafer calibrating device based on semiconductor manufacturing includes a calibrating component for calibrating the movement of the calibrating mounting board 1, the calibrating component includes a first Y-axis calibrating member, a second Y-axis calibrating member and a Z-axis calibrating member, the first Y-axis calibrating member is disposed between the first Y-axis pressure detecting portion 6 and an end portion of the first end of the wafer detecting mounting board 5, the second Y-axis calibrating member is disposed between the second Y-axis pressure detecting portion 7 and an end portion of the first end of the wafer detecting mounting board 5, the Z-axis calibrating member is disposed between the Z-axis pressure detecting portion 8 and the first Y-axis pressure detecting portion 6, and a line connecting the first Y-axis calibrating member and the first Y-axis pressure detecting portion 6, a line connecting the second Y-axis calibrating member and the second Y-axis pressure detecting portion 7, and a line connecting the Z-axis calibrating member and the Z-axis pressure detecting portion 8 are all parallel to each other.
It will be appreciated that the movement of the calibration point mounting plate 1 may be initially calibrated by the calibration assembly such that the first Y-axis detection block 2 is moved in the direction of the first Y-axis pressure detection section 6, the second Y-axis detection block 3 is moved in the direction of the second Y-axis pressure detection section 7, and the Z-axis detection block 4 is moved in the direction of the Z-axis pressure detection section 8.
Specifically, the first Y-axis calibration member is located in front of the first Y-axis pressure detecting portion 6, that is, the first Y-axis calibration member needs to pass through the first Y-axis calibration member before the first Y-axis calibration member 2 is allowed to pass through the first Y-axis calibration member, and the second Y-axis calibration member 3 or the Z-axis calibration member 4 cannot pass through the first Y-axis calibration member, so that the first Y-axis calibration member 2 is ensured to be moved to the first Y-axis pressure detecting portion 6, and the accuracy of the wafer calibration point is ensured. The principle of the second Y-axis calibration member and the Z-axis calibration member are the same as the first Y-axis calibration member, and the description thereof will not be repeated.
In the embodiment of the application, the first Y-axis calibration piece is provided with a transverse opening, the second Y-axis calibration piece is provided with a vertical opening, the Z-axis calibration piece is provided with an inclined opening, the extending direction of the transverse opening is mutually perpendicular to the extending direction of the vertical opening, and the extending direction of the vertical opening forms an included angle of 45 degrees with the extending direction of the inclined opening;
the shape of the first Y-axis detection block 2 is matched with the transverse opening, the shape of the second Y-axis detection block 3 is matched with the vertical opening, and the shape of the Z-axis detection block 4 is matched with the shape of the inclined opening.
It will be appreciated that since the shape of the first Y-axis detection block 2 matches the transverse opening, the first Y-axis detection block 2 can only pass through the first Y-axis calibration piece having the transverse opening; since the shape of the second Y-axis detecting block 3 is matched with the vertical opening, the second Y-axis detecting block 3 can pass through only the second Y-axis calibration piece having the vertical opening; since the shape of the Z-axis detecting block 4 matches the inclined opening, the Z-axis detecting block 4 can pass only the Z-axis calibration piece having the inclined opening. And then the first Y-axis detecting block 2, the second Y-axis detecting block 3 and the Z-axis detecting block 4 can be calibrated preliminarily by calibrating the movement of the mounting plate 1, respectively, so that the first Y-axis detecting block 2 is moved toward the first Y-axis pressure detecting section 6, the second Y-axis detecting block 3 is moved toward the second Y-axis pressure detecting section 7, and the Z-axis detecting block 4 is moved toward the Z-axis pressure detecting section 8.
In one embodiment of the application, a wafer calibrating device based on semiconductor manufacturing comprises a triaxial driving element, wherein the triaxial driving element is connected with a calibrating component and used for driving the calibrating component to move along a Z axis or a Y axis or an X axis.
It can be understood that the three-axis driving piece can automatically drive the calibration point assembly to move, so that the automation degree and the intelligent degree of wafer calibration point are improved.
The three-axis driving piece comprises a Z-axis driving motor, a Y-axis driving motor and a U-axis driving motor, wherein the Z-axis driving motor is used for driving the correction point mounting plate 1 to move towards the Z-axis direction, the Y-axis driving motor is used for driving the correction point mounting plate 1 to move towards the Y-axis direction, and the U-axis driving motor is used for driving the correction point mounting plate 1 to move towards the U-axis direction.
In accordance with an embodiment of the second aspect of the present application, there is provided an embodiment of a wafer nodding method based on semiconductor fabrication, it being noted that although a logic sequence is shown in the flow chart, under certain data, the steps shown or described may be accomplished in a different order than that shown herein.
Before describing the wafer point calibration method based on semiconductor manufacturing in the embodiment of the present application, an application scenario of the wafer point calibration method based on semiconductor manufacturing is explained first, and the wafer point calibration method based on semiconductor manufacturing of the present application may be applied to an intelligent terminal such as a smart phone, a tablet, a computer, etc. connected to a rewinding machine or a point calibration device, and may also be applied to a server connected to the rewinding machine or the point calibration device.
The server side may be, for example, a processor side or a similar control element on a rewinding machine or a point calibration device, and the server side may also be a server independent of the rewinding machine or the point calibration device, and the server side is merely illustrated herein and is not particularly limited.
As shown in fig. 3, the wafer aligning method based on semiconductor manufacturing includes:
S100, controlling the calibration point mounting plate 1 to move towards the wafer detection mounting plate 5;
S200, acquiring detection data of a first Y-axis pressure detection part 6, a second Y-axis pressure detection part 7 and a Z-axis pressure detection part 8;
S300, determining that the first Y-axis pressure detection part 6, the second Y-axis pressure detection part 7 and the Z-axis pressure detection part 8 all detect the pressure based on the detection data;
s400, acquiring coordinate data of a first Y-axis pressure detection part 6, a second Y-axis pressure detection part 7 and a Z-axis pressure detection part 8;
s500, determining the coordinate parameters of the correction points based on the coordinate data.
It can be understood that by controlling the calibration point mounting plate 1 to move toward the wafer detection mounting plate 5 and simultaneously acquiring the detection data of the first Y-axis pressure detection portion 6, the second Y-axis pressure detection portion 7 and the Z-axis pressure detection portion 8, when it is determined that the first Y-axis pressure detection portion 6, the second Y-axis pressure detection portion 7 and the Z-axis pressure detection portion 8 all detect the pressure, it is explained that the first Y-axis detection block 2 is abutted to the first Y-axis pressure detection portion 6, the second Y-axis detection block 3 is abutted to the second Y-axis pressure detection portion 7, the Z-axis detection block 4 is abutted to the Z-axis pressure detection portion 8, it is explained that the calibration point mounting plate 1 has moved to the calibration point position at this time, then the coordinate data of the first Y-axis pressure detection portion 6, the second Y-axis pressure detection portion 7 and the Z-axis pressure detection portion 8 at this time are the Z-axis coordinates at this time are the Z-values in the calibration point coordinate parameters, the Y values and the U values in the calibration point coordinate parameters can be determined based on the coordinates of the first Y-axis detection block 2 and the second Y-axis detection block 3 at this time, and thus it is not necessary to determine whether the calibration point coordinates of the calibration point coordinates can be manually detected, and it is possible to realize that the calibration point detection has been achieved, and the degree of the calibration point calibration has been achieved, and the calibration point has been achieved, and the calibration point calibration has not been achieved has been achieved.
In one embodiment of the application, controlling the movement of the calibration point mounting plate 1 toward the wafer inspection mounting plate 5 includes:
acquiring signal detection data of a signal detection piece at the Z-axis pressure detection part 8, wherein the signal detection piece is used for detecting the signal intensity of a signal source at the Z-axis detection block 4;
Based on the signal detection data, the movement of the calibration point mounting plate 1 is controlled.
It can be understood that the signal source can be detected through the signal detecting member, when the signal source is closer to the signal detecting member, the signal strength detected by the signal detecting member is larger, and then the movement of the calibration point mounting plate 1 in the direction of signal enhancement can be controlled according to the detection result of the signal detecting member, so that the movement guiding of the calibration point mounting plate 1 is realized, the Z-axis detecting block 4 and the Z-axis pressure detecting portion 8 are quickly abutted, at this time, the first Y-axis detecting block 2 is not abutted to the first Y-axis pressure detecting portion 6, and is also close to the first Y-axis pressure detecting portion 6, the second Y-axis detecting block 3 is also close to the second Y-axis pressure detecting portion 7, and only slight adjustment is needed, so that the first Y-axis detecting block 2 is abutted to the first Y-axis pressure detecting portion 6, and the second Y-axis detecting block 3 is abutted to the second Y-axis pressure detecting portion 7, so that the wafer calibration is simpler and quicker.
In one embodiment of the application, controlling the movement of the calibration point mounting plate 1 based on the signal detection data comprises:
comparing a plurality of signal detection data acquired within a preset time length, and determining that the signal strength detected by the target signal detection data is maximum;
based on the target signal detection data, the movement of the calibration point mounting plate 1 is controlled.
It can be understood that, in the preset time period, the calibration point mounting plate 1 can move to different positions, meanwhile, the server side can acquire all signal detection data in the preset time period, compare all signal detection data, determine one signal detection data with the maximum signal intensity as target signal detection data, and the target signal detection data is closest to the Z-axis pressure detection part 8, and then control the movement of the calibration point mounting plate 1 according to the position where the target signal detection data is acquired, so that the calibration point mounting plate 1 continuously moves to the position with greater signal intensity, so that the Z-axis detection block 4 is fast abutted to the Z-axis pressure detection part 8.
In one embodiment of the present application, after acquiring the detection data of the first Y-axis pressure detecting section 6, the second Y-axis pressure detecting section 7, and the Z-axis pressure detecting section 8, it includes:
Determining that the first Y-axis pressure detecting portion 6 and the second Y-axis pressure detecting portion 7 do not detect the pressure, and determining that the Z-axis pressure detecting portion 8 detects the pressure;
The calibration point mounting plate 1 is controlled to move along the U axis, so that the first Y-axis detection block 2 is abutted against the first Y-axis pressure detection part 6, and the second Y-axis detection block 3 is abutted against the second Y-axis pressure detection part 7;
Determining that the first Y-axis pressure detecting portion 6 and the second Y-axis pressure detecting portion 7 both detect pressures;
Acquiring coordinate data of the first Y-axis pressure detecting portion 6, the second Y-axis pressure detecting portion 7, and the Z-axis pressure detecting portion 8;
and determining the correction point coordinate parameters based on the coordinate data.
It will be appreciated that after the detection data of the first Y-axis pressure detecting portion 6, the second Y-axis pressure detecting portion 7, and the Z-axis pressure detecting portion 8 are acquired, the abutting relationship between the respective detection blocks and the pressure detecting portion may be determined based on the detection data, and when it is determined that the first Y-axis pressure detecting portion 6 and the second Y-axis pressure detecting portion 7 do not detect the pressure, and it is determined that the Z-axis pressure detecting portion 8 detects the pressure, it is explained that only the Z-axis detecting block 4 abuts the Z-axis pressure detecting portion 8 at this time, the first Y-axis detecting block 2 does not abut the first Y-axis pressure detecting portion 6, the second Y-axis detecting block 3 does not abut the second Y-axis pressure detecting portion 7, and at this time, the calibration mounting plate 1 should be offset in the U-axis direction so that the first Y-axis detecting block 2 is offset from the first Y-axis pressure detecting portion 6 and the second Y-axis detecting block 3 is offset from the second Y-axis pressure detecting portion 7. Then, the calibration point mounting plate 1 is controlled to move along the U axis, the calibration point mounting plate 1 can be controlled to move along the positive direction of the U axis, and if the first Y-axis detection block 2 cannot be abutted against the first Y-axis pressure detection portion 6, the second Y-axis detection block 3 can be abutted against the second Y-axis pressure detection portion 7, the calibration point mounting plate 1 is controlled to move along the negative direction of the U axis, so that the first Y-axis detection block 2 is abutted against the first Y-axis pressure detection portion 6, and the second Y-axis detection block 3 is abutted against the second Y-axis pressure detection portion 7. When it is determined that the first Y-axis pressure detecting portion 6 and the second Y-axis pressure detecting portion 7 each detect pressure, it is explained that at this time, the Z-axis pressure detecting portion 8, the first Y-axis pressure detecting portion 6 and the second Y-axis pressure detecting portion 7 each detect pressure, and then the calibration point coordinate parameters can be determined according to the coordinate data of the first Y-axis detecting block 2, the second Y-axis detecting block 3 and the Z-axis detecting block 4 at this time, so that the intelligent control of the calibration point mounting plate 1 is realized, and the degree of intellectualization of the calibration point coordinate parameters is improved.
In one embodiment of the present application, after determining that the first Y-axis pressure detecting portion 6 and the second Y-axis pressure detecting portion 7 each detect a pressure, it includes:
The calibration point mounting plate 1 is controlled to move towards the Z-axis pressure detection part 8 along the positive direction of the Z-axis;
determining that the Z-axis pressure detecting section 8 detects the pressure;
the calibration point mounting plate 1 is controlled to continuously move L along the positive direction of the Z axis, so that the Z axis detection block 4 is out of contact with the Z axis pressure detection part 8;
the calibration point mounting plate 1 is controlled to move by 0.5L along the reverse direction of the Z axis;
Acquiring coordinate data of the first Y-axis pressure detecting portion 6, the second Y-axis pressure detecting portion 7, and the Z-axis pressure detecting portion 8;
and determining the correction point coordinate parameters based on the coordinate data.
It will be appreciated that after determining that the first Y-axis pressure detecting portion 6 and the second Y-axis pressure detecting portion 7 each detect a pressure, at this time, the Z-axis detecting block 4 may abut against an edge of the Z-axis pressure detecting portion 8, and not abut against a center position of the Z-axis pressure detecting portion 8, and the first Y-axis detecting block 2 and the second Y-axis pressure detecting block are the same. When the pressure is detected by the Z-axis pressure detecting part 8, the position of the Z-axis detecting block 4 is recorded, then the Z-axis detecting block 4 is continuously controlled to move along the positive direction of the Z-axis, when the pressure is not detected by the Z-axis pressure detecting part 8, the Z-axis detecting block 4 is just separated from the Z-axis pressure detecting part 8, the position of the Z-axis detecting block 4 is recorded, and then the Z-axis detecting block 4 is abutted against the Z-axis pressure detecting part 8 from the beginning to the disconnection from the Z-axis pressure detecting part 8, and the moving distance is L. Then, the calibration point mounting plate 1 is controlled to move along the opposite direction of the Z axis by 0.5L, so that the Z axis detection block 4 is just positioned at the center position of the Z axis pressure detection part 8, at this time, the first Y axis detection block 2 is just positioned at the center position of the first Y axis pressure detection part 6, and the second Y axis detection block 3 is just positioned at the center position of the second Y axis pressure detection part 7. And then, at the moment, accurate correction point coordinate parameters can be obtained according to the coordinate data of the first Y-axis detection block 2, the second Y-axis detection block 3 and the Z-axis detection block 4.
According to an embodiment of the third aspect of the present application, as shown in fig. 4, an electronic device may include: processor 310, communication interface (Communications Interface) 320, memory 330 and communication bus 340, wherein processor 310, communication interface 320 and memory 330 communicate with each other via communication bus 340. The processor 310 may invoke logic instructions in the memory 330 to perform a wafer nodding method based on semiconductor manufacturing, the method comprising:
The calibration point mounting plate 1 is controlled to move towards the wafer detection mounting plate 5;
acquiring detection data of the first Y-axis pressure detection section 6, the second Y-axis pressure detection section 7, and the Z-axis pressure detection section 8;
Based on the detection data, it is determined that the first Y-axis pressure detecting portion 6, the second Y-axis pressure detecting portion 7, and the Z-axis pressure detecting portion 8 each detect a pressure;
Acquiring coordinate data of the first Y-axis pressure detecting portion 6, the second Y-axis pressure detecting portion 7, and the Z-axis pressure detecting portion 8;
and determining the correction point coordinate parameters based on the coordinate data.
Further, the logic instructions in the memory 330 described above may be implemented in the form of software functional units and may be stored in a computer-readable storage medium when sold or used as a stand-alone product. Based on this understanding, the technical solution of the present application may be embodied essentially or in a part contributing to the prior art or in a part of the technical solution in the form of a software product stored in a storage medium, comprising several instructions for causing a computer device (which may be a personal computer, a server, a network device, etc.) to perform all or part of the steps of the method of the embodiments of the present application. And the aforementioned storage medium includes: a usb disk, a removable hard disk, a Read-Only Memory (ROM), a random access Memory (RAM, random Access Memory), a magnetic disk, or an optical disk, or other various media capable of storing program codes.
In another aspect, the present application also provides a computer program product comprising a computer program stored on a non-transitory computer readable storage medium, the computer program comprising program instructions which, when executed by a computer, are capable of performing the method for wafer spot calibration based on semiconductor manufacturing provided by the above methods, the method comprising:
The calibration point mounting plate 1 is controlled to move towards the wafer detection mounting plate 5;
acquiring detection data of the first Y-axis pressure detection section 6, the second Y-axis pressure detection section 7, and the Z-axis pressure detection section 8;
Based on the detection data, it is determined that the first Y-axis pressure detecting portion 6, the second Y-axis pressure detecting portion 7, and the Z-axis pressure detecting portion 8 each detect a pressure;
Acquiring coordinate data of the first Y-axis pressure detecting portion 6, the second Y-axis pressure detecting portion 7, and the Z-axis pressure detecting portion 8;
and determining the correction point coordinate parameters based on the coordinate data.
According to an embodiment of the fifth aspect of the present application, the present application further includes a non-transitory computer readable storage medium having stored thereon a computer program which, when executed by a processor, is implemented to perform the above-provided semiconductor manufacturing-based wafer nodding method, the method comprising:
The calibration point mounting plate 1 is controlled to move towards the wafer detection mounting plate 5;
acquiring detection data of the first Y-axis pressure detection section 6, the second Y-axis pressure detection section 7, and the Z-axis pressure detection section 8;
Based on the detection data, it is determined that the first Y-axis pressure detecting portion 6, the second Y-axis pressure detecting portion 7, and the Z-axis pressure detecting portion 8 each detect a pressure;
Acquiring coordinate data of the first Y-axis pressure detecting portion 6, the second Y-axis pressure detecting portion 7, and the Z-axis pressure detecting portion 8;
and determining the correction point coordinate parameters based on the coordinate data.
The apparatus embodiments described above are merely illustrative, wherein elements illustrated as separate elements may or may not be physically separate, and elements shown as elements may or may not be physical elements, may be located in one place, or may be distributed over a plurality of network elements. Some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of this embodiment. Those of ordinary skill in the art will understand and implement the present invention without undue burden.
From the above description of the embodiments, it will be apparent to those skilled in the art that the embodiments may be implemented by means of software plus necessary general hardware platforms, or of course may be implemented by means of hardware. Based on such understanding, the foregoing technical solutions may be embodied essentially or in part in the form of a software product, which may be stored in a computer-readable storage medium, such as a ROM/RAM, a magnetic disk, an optical disk, etc., including several instructions to cause a computer device (which may be a personal computer, a server, or a network device, etc.) to perform the various embodiments or methods of some parts of the embodiments. .
Finally, it should be noted that the above-mentioned embodiments are merely illustrative of the application, and not limiting. While the application has been described in detail with reference to the embodiments, those skilled in the art will appreciate that various combinations, modifications, or equivalent substitutions can be made to the technical solutions of the present application without departing from the spirit and scope of the technical solutions of the present application, and it is intended to be covered by the scope of the claims of the present application.

Claims (5)

1. A wafer aligning method based on semiconductor manufacturing, which is used for a wafer aligning device based on semiconductor manufacturing, and is characterized in that the wafer aligning device based on semiconductor manufacturing is applied to a rewinding machine, the rewinding machine comprises a wafer table, and the wafer aligning device based on semiconductor manufacturing comprises:
the correction assembly comprises a correction mounting plate, a first Y-axis detection block, a second Y-axis detection block and a Z-axis detection block, wherein the first Y-axis detection block and the second Y-axis detection block are symmetrically arranged relative to the Z-axis detection block, the upper surfaces of the first Y-axis detection block, the second Y-axis detection block and the Z-axis detection block are all in the same plane, the first Y-axis detection block and the second Y-axis detection block are mounted at the first end of the correction mounting plate, the Z-axis detection block is mounted at the correction mounting plate, the Z-axis detection block is farther away from the first end of the correction mounting plate relative to the first Y-axis detection block and the second Y-axis detection block, and the second end of the correction mounting plate is suitable for bearing an external force so that the correction mounting plate moves under the driving of the external force;
The wafer detection assembly is arranged on the wafer table and comprises a wafer detection mounting plate, a first Y-axis pressure detection part, a second Y-axis pressure detection part and a Z-axis pressure detection part, wherein the first Y-axis pressure detection part and the second Y-axis pressure detection part are symmetrically arranged relative to the Z-axis pressure detection part, the lower surfaces of the first Y-axis pressure detection part, the second Y-axis pressure detection part and the Z-axis pressure detection part are all on the same plane, the first Y-axis pressure detection part and the second Y-axis pressure detection part are arranged at the first end of the wafer detection mounting plate, the Z-axis pressure detection part is arranged at the wafer detection mounting plate, and the Z-axis pressure detection part is farther away from the first end of the wafer detection mounting plate relative to the first Y-axis pressure detection part and the second Y-axis pressure detection part;
The Z-axis pressure detection part is provided with a signal detection piece, the signal detection piece is suitable for detecting the signal intensity of the signal source, and the signal detection piece is electrically connected with the controller;
The method comprises the following steps:
controlling the calibration point mounting plate to move towards the wafer detection mounting plate;
Acquiring detection data of a first Y-axis pressure detection part, a second Y-axis pressure detection part and a Z-axis pressure detection part;
determining, based on the detection data, that the first Y-axis pressure detection portion, the second Y-axis pressure detection portion, and the Z-axis pressure detection portion each detect a pressure;
Acquiring coordinate data of the first Y-axis pressure detection part, the second Y-axis pressure detection part and the Z-axis pressure detection part;
Determining a correction point coordinate parameter based on the coordinate data;
the control calibration point mounting plate moves towards the wafer detection mounting plate and comprises:
acquiring signal detection data of a signal detection piece at the Z-axis pressure detection part, wherein the signal detection piece is used for detecting the signal intensity of a signal source at the Z-axis detection block;
controlling movement of the calibration point mounting plate based on the signal detection data;
the controlling the movement of the calibration point mounting plate based on the signal detection data includes:
Comparing the plurality of signal detection data acquired within a preset time length, and determining that the signal strength detected by the target signal detection data is maximum;
Controlling movement of the calibration point mounting plate based on the target signal detection data;
after the detection data of the first Y-axis pressure detection part, the second Y-axis pressure detection part and the Z-axis pressure detection part are obtained, the method comprises the following steps:
determining that the first Y-axis pressure detection portion and the second Y-axis pressure detection portion do not detect pressure, and determining that the Z-axis pressure detection portion detects pressure;
Controlling the calibration point mounting plate to move along the U axis, so that the first Y axis detection block is abutted with the first Y axis pressure detection part, and the second Y axis detection block is abutted with the second Y axis pressure detection part;
determining that the first Y-axis pressure detection portion and the second Y-axis pressure detection portion both detect pressures;
Acquiring coordinate data of the first Y-axis pressure detection part, the second Y-axis pressure detection part and the Z-axis pressure detection part;
and determining the correction point coordinate parameters based on the coordinate data.
2. Wafer school point device based on semiconductor manufacturing is applied to the rewinding machine, the rewinding machine includes the wafer platform, its characterized in that includes:
the correction assembly comprises a correction mounting plate, a first Y-axis detection block, a second Y-axis detection block and a Z-axis detection block, wherein the first Y-axis detection block and the second Y-axis detection block are symmetrically arranged relative to the Z-axis detection block, the upper surfaces of the first Y-axis detection block, the second Y-axis detection block and the Z-axis detection block are all in the same plane, the first Y-axis detection block and the second Y-axis detection block are mounted at the first end of the correction mounting plate, the Z-axis detection block is mounted at the correction mounting plate, the Z-axis detection block is farther away from the first end of the correction mounting plate relative to the first Y-axis detection block and the second Y-axis detection block, and the second end of the correction mounting plate is suitable for bearing an external force so that the correction mounting plate moves under the driving of the external force;
The wafer detection assembly is arranged on the wafer table and comprises a wafer detection mounting plate, a first Y-axis pressure detection part, a second Y-axis pressure detection part and a Z-axis pressure detection part, wherein the first Y-axis pressure detection part and the second Y-axis pressure detection part are symmetrically arranged relative to the Z-axis pressure detection part, the lower surfaces of the first Y-axis pressure detection part, the second Y-axis pressure detection part and the Z-axis pressure detection part are all on the same plane, the first Y-axis pressure detection part and the second Y-axis pressure detection part are arranged at the first end of the wafer detection mounting plate, the Z-axis pressure detection part is arranged at the wafer detection mounting plate, and the Z-axis pressure detection part is farther away from the first end of the wafer detection mounting plate relative to the first Y-axis pressure detection part and the second Y-axis pressure detection part;
The Z-axis pressure detection part is provided with a signal detection piece, the signal detection piece is suitable for detecting the signal intensity of the signal source, and the signal detection piece is electrically connected with the controller;
The wafer calibration device based on semiconductor manufacturing comprises a calibration assembly, wherein the calibration assembly is used for calibrating the movement of the calibration mounting plate, the calibration assembly comprises a first Y-axis calibration piece, a second Y-axis calibration piece and a Z-axis calibration piece, the first Y-axis calibration piece is provided with a transverse opening, the second Y-axis calibration piece is provided with a vertical opening, the Z-axis calibration piece is provided with an inclined opening, the extending direction of the transverse opening is mutually perpendicular to the extending direction of the vertical opening, and the extending direction of the vertical opening forms an included angle of 45 degrees with the extending direction of the inclined opening;
The shape of the first Y-axis detection block is matched with the transverse opening, the shape of the second Y-axis detection block is matched with the vertical opening, and the shape of the Z-axis detection block is matched with the shape of the inclined opening.
3. The semiconductor manufacturing-based wafer spot calibration apparatus according to claim 2, wherein the first Y-axis calibration member is disposed between the first Y-axis pressure detection portion and an end portion of the first end of the wafer inspection mounting board, the second Y-axis calibration member is disposed between the second Y-axis pressure detection portion and an end portion of the first end of the wafer inspection mounting board, the Z-axis calibration member is disposed between the Z-axis pressure detection portion and the first Y-axis pressure detection portion, and a line connecting the first Y-axis calibration member and the first Y-axis pressure detection portion, a line connecting the second Y-axis calibration member and the second Y-axis pressure detection portion, and a line connecting the Z-axis calibration member and the Z-axis pressure detection portion are all parallel to each other.
4. The semiconductor-based wafer spot calibration device of claim 2, wherein the semiconductor-based wafer spot calibration device comprises a tri-axis drive coupled to the spot calibration assembly for driving the spot calibration assembly along a Z-axis or a Y-axis or an X-axis.
5. An electronic device comprising a memory, a processor, and a computer program stored on the memory and executable on the processor, wherein the processor implements the semiconductor manufacturing-based wafer spot calibration method of claim 1 when the computer program is executed by the processor.
CN202311297816.0A 2023-10-07 2023-10-07 Wafer point calibration method and device based on semiconductor manufacturing and electronic equipment Active CN117352411B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202311297816.0A CN117352411B (en) 2023-10-07 2023-10-07 Wafer point calibration method and device based on semiconductor manufacturing and electronic equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202311297816.0A CN117352411B (en) 2023-10-07 2023-10-07 Wafer point calibration method and device based on semiconductor manufacturing and electronic equipment

Publications (2)

Publication Number Publication Date
CN117352411A CN117352411A (en) 2024-01-05
CN117352411B true CN117352411B (en) 2024-06-14

Family

ID=89368499

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202311297816.0A Active CN117352411B (en) 2023-10-07 2023-10-07 Wafer point calibration method and device based on semiconductor manufacturing and electronic equipment

Country Status (1)

Country Link
CN (1) CN117352411B (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101283437A (en) * 2005-06-08 2008-10-08 艾克塞利斯技术公司 Workpiece handling alignment system
CN115799145A (en) * 2022-12-28 2023-03-14 上海鼎泰匠芯科技有限公司 Calibration jig, calibration system and calibration method

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN216084847U (en) * 2021-09-08 2022-03-18 长江存储科技有限责任公司 Wafer bearing device and semiconductor equipment
CN115881575A (en) * 2021-09-27 2023-03-31 长鑫存储技术有限公司 Wafer correction device and wafer correction method
WO2023069463A1 (en) * 2021-10-20 2023-04-27 Lam Research Corporation Adaptive positioning systems and routines using an autocalibration wafer and a calibration wafer with cutouts

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101283437A (en) * 2005-06-08 2008-10-08 艾克塞利斯技术公司 Workpiece handling alignment system
CN115799145A (en) * 2022-12-28 2023-03-14 上海鼎泰匠芯科技有限公司 Calibration jig, calibration system and calibration method

Also Published As

Publication number Publication date
CN117352411A (en) 2024-01-05

Similar Documents

Publication Publication Date Title
US9659363B2 (en) Workpiece positioning apparatus using imaging unit
JP4685559B2 (en) Method for adjusting parallelism between probe card and mounting table, inspection program storage medium, and inspection apparatus
US20060149421A1 (en) Robot controller
US7355725B2 (en) Measuring system
US20050034288A1 (en) Wafer position teaching method and teaching jig
US10046378B2 (en) Bending robot and method for detecting workpiece
CN109507950B (en) Device, method and system for realizing plane positioning processing control based on probe
CN104282605B (en) Method, device and system for debugging silicon wafer conveying position in process chamber
CN109664328B (en) Tool calibration method of SCARA robot
CN103358308A (en) Robotic weld gun orientation normalization
US20130116817A1 (en) System and method for machining and inspecting a workpiece
CN113211493B (en) Calibration method and calibration system
CN117352411B (en) Wafer point calibration method and device based on semiconductor manufacturing and electronic equipment
CN109282772B (en) Method for determining coordinate system of blank workpiece of cylinder cover
CN115831844A (en) Wafer alignment method and alignment device
CN115055856B (en) Teaching-free welding method, teaching-free welding device, teaching-free welding equipment and computer-readable storage medium
US10343318B2 (en) Molding system provided with molding machine and molded article removal device
WO2022075303A1 (en) Robot system
WO2017141405A1 (en) Component determination device and component determination method
KR20220143331A (en) Align system and align method for wafer
JP2005353750A (en) Maintenance and management apparatus for electronic component mounting apparatus
CN112536923A (en) Precision punching equipment and method
CN113977286B (en) Integrated equipment for grinding and drilling balancing weight of mini-excavator and control method
KR100570198B1 (en) Apparatus for Teaching Working Position of Picker in Semiconductor Test Handler and Method for Teaching Working Position of the Same
JP4908755B2 (en) Grinding machine calibration method and recalibration method and machine having a device for performing the method

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant