CN117350988A - Method, device, medium and system for detecting scratch defects on wafer surface - Google Patents
Method, device, medium and system for detecting scratch defects on wafer surface Download PDFInfo
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- 230000007547 defect Effects 0.000 title claims abstract description 185
- 238000000034 method Methods 0.000 title claims abstract description 48
- 238000004891 communication Methods 0.000 claims abstract description 18
- 238000007781 pre-processing Methods 0.000 claims description 15
- 230000002950 deficient Effects 0.000 claims description 11
- 238000003860 storage Methods 0.000 claims description 9
- 238000004364 calculation method Methods 0.000 claims description 8
- 238000005520 cutting process Methods 0.000 claims description 8
- 238000000605 extraction Methods 0.000 claims description 6
- 238000012360 testing method Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 206
- 238000012545 processing Methods 0.000 description 14
- 238000010586 diagram Methods 0.000 description 13
- 238000001514 detection method Methods 0.000 description 10
- 230000007613 environmental effect Effects 0.000 description 8
- 230000006870 function Effects 0.000 description 8
- 238000004458 analytical method Methods 0.000 description 6
- 230000011218 segmentation Effects 0.000 description 6
- 230000002159 abnormal effect Effects 0.000 description 5
- 230000000877 morphologic effect Effects 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 238000013473 artificial intelligence Methods 0.000 description 2
- 238000013528 artificial neural network Methods 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000003190 augmentative effect Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000004043 dyeing Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000013441 quality evaluation Methods 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- G—PHYSICS
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- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/10—Segmentation; Edge detection
- G06T7/187—Segmentation; Edge detection involving region growing; involving region merging; involving connected component labelling
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T2207/00—Indexing scheme for image analysis or image enhancement
- G06T2207/20—Special algorithmic details
- G06T2207/20092—Interactive image processing based on input by user
- G06T2207/20104—Interactive definition of region of interest [ROI]
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- Y02P90/30—Computing systems specially adapted for manufacturing
Abstract
The invention discloses a method, a device, a medium and a system for detecting scratch defects on the surface of a wafer, which belong to the technical field of semiconductor manufacturing and comprise the following steps: acquiring an interested wafer area image of a wafer to be tested based on a plurality of original images of the wafer to be tested, and dividing the image to obtain a plurality of connected domains; dividing the plurality of connected domains into a first connected domain or a second connected domain; aiming at the first communication domain, identifying the type of the defect in the first communication domain according to the characteristic value of the communication domain; determining a corresponding third connected domain for the second connected domain, and combining the second connected domain and the corresponding third connected domain to generate a corresponding defect region to be detected; and identifying the type of the defect according to the characteristic value of the defect area to be detected. Identifying a first connected domain and a second connected domain which is possibly intermittent from the connected domain in the surface image of the wafer to be detected, and combining the second connected domain to form a final defect region to be detected; and identifying the defect type based on the finally determined defect region to be detected, so that the accuracy of identifying the scratch defect is improved.
Description
Technical Field
The disclosure relates to the technical field of semiconductor manufacturing, and in particular relates to a method, a device, a medium and a system for detecting scratch defects on the surface of a wafer.
Background
In the field of semiconductors, a single crystal silicon rod is prepared by a crystal growth apparatus of the Czochralski method, and then a series of industrial processes including slicing and the like are performed on the single crystal silicon rod to prepare a single crystal silicon wafer, and then a Wen Tongchen wafer is prepared. Defects such as edge breakage, scratch, chemical dirt and the like caused by friction, scratch, bump or chemical liquid dip dyeing and the like in the wafer transportation or production process are the most main defects on the surface of the wafer. Wafers containing such defects, if not effectively detected and flowed into subsequent processes, can easily cause debris problems during the subsequent polishing process, thereby causing failure and downtime of polishing equipment, damaging the equipment, and causing serious economic loss.
At present, scratch defect detection on the surface of a wafer is mainly performed by observing the surface of the wafer in an optical microscope mode. The detection mode can find defects with larger size and deeper depth, but the detection effect is poor for some slight scratch defects. Because of no fixed judgment standard, the method is easily influenced by subjective factors of detection personnel, attitude difference may exist in defect judgment, and meanwhile, objective defects of low detection efficiency, high labor cost and the like exist in manual judgment.
Disclosure of Invention
In view of the foregoing, it is desirable to provide a method, apparatus, medium and system for detecting scratch defects on a wafer surface; the scratch defect on the surface of the wafer can be accurately identified.
The technical scheme of the present disclosure is realized as follows:
in a first aspect, the present disclosure provides a method for detecting a scratch defect on a wafer surface, including:
acquiring an interesting wafer area image of a wafer to be tested based on a plurality of original images of the wafer to be tested;
obtaining a plurality of connected domains according to the surface defects represented by the wafer region image of interest;
dividing the plurality of connected domains into a first connected domain or a second connected domain;
identifying the type of the defect in each first connected domain according to the characteristic value of the connected domain;
for each second communicating domain, determining a corresponding third communicating domain according to the distance and the direction difference, and merging each second communicating domain with the corresponding third communicating domain to generate a corresponding defect region to be detected;
and identifying the type of the defect in each defect area to be detected according to the characteristic value of each defect area to be detected.
In some examples, the dividing the plurality of connected domains into the first connected domain or the second connected domain includes:
For each connected domain, determining that each connected domain is a first connected domain or a second connected domain according to the average gray value of the connected domain.
In some examples, the determining, for each second connected domain, a corresponding third connected domain according to the distance and the direction difference includes:
calculating, for each second communicating domain, a distance between the each second communicating domain and each of the other second communicating domains;
the connected domains with the distance smaller than the distance threshold value are candidate third connected domains of each second connected domain;
calculating a direction difference between each of the second communicating domains and each of the candidate third communicating domains;
and determining the connected domain with the direction difference smaller than the direction difference threshold as a third connected domain corresponding to each second connected domain.
In some examples, the calculating the directional difference between the each second connected domain and each of the candidate third connected domains includes:
the straight line of the smallest circumscribed rectangle of each second communicating region in the long side direction is a first straight line;
the straight line of the smallest circumscribed rectangle in each candidate third communication domain in the long side direction is a second straight line;
The included angle between the first straight line and the second straight line is a direction difference.
In some examples, the calculating the distance between each of the second connected domains and each of the other second connected domains includes:
a straight line parallel to the long side direction of the minimum circumscribed rectangle of each second communicating region is a reference straight line passing through the center point of the minimum circumscribed rectangle of each second communicating region;
the vertical distance between the center point of the smallest circumscribed rectangle of each of the other second communication domains and the reference straight line is a first distance;
the distance between the center point of the smallest circumscribed rectangle of each of the other second communication domains and the center point of the smallest circumscribed rectangle of each of the other second communication domains is a second distance;
accordingly, in the other second connected domains, the connected domain with the distance smaller than the distance threshold is a candidate third connected domain of each second connected domain, including:
the first distance is smaller than a first distance threshold, and the connected domains with the second distance smaller than a second distance threshold are candidate third connected domains of each second connected domain.
In a second aspect, an apparatus for detecting a scratch defect on a wafer surface, the apparatus comprising: an image acquisition section, an extraction section, a determination section, a first recognition section, a merging section, a second recognition section; wherein,
The image acquisition section configured to: acquiring an interesting wafer area image of a wafer to be tested based on a plurality of original images of the wafer to be tested;
the extraction portion is configured to: obtaining a plurality of connected domains according to the surface defects represented by the wafer region image of interest;
the determination section is configured to: dividing the plurality of connected domains into a first connected domain or a second connected domain;
the first identification portion is configured to: identifying the type of the defect in each first connected domain according to the characteristic value of the connected domain;
the merging section configured to: for each second communicating domain, determining a corresponding third communicating domain according to the distance and the direction difference, and merging each second communicating domain with the corresponding third communicating domain to generate a corresponding defect region to be detected;
the second identifying section is configured to identify a type of defect within each defective area to be detected based on a characteristic value of each defective area to be detected.
In a third aspect, the present disclosure provides a computer storage medium storing a program for detecting a wafer surface scratch defect, where the program for detecting a wafer surface scratch defect, when executed by at least one processor, implements the method and steps for detecting a wafer surface scratch defect according to the first aspect.
In a fourth aspect, the present disclosure provides a system for detecting a scratch defect on a wafer surface, the system comprising:
a scanning camera configured to: collecting an original image of the wafer to be tested by scanning the wafer to be tested once or a plurality of times;
a light source configured to: the scanning camera irradiates the surface of the wafer to be detected when acquiring the original image;
a support member configured to: when the image of the wafer to be detected is acquired, supporting and driving the wafer to be detected to move;
a computing device configured to: the method and the steps for detecting the scratch defects on the surface of the wafer according to the first aspect are realized during execution.
The present disclosure provides a method, apparatus, medium and system for detecting surface scratch defects; identifying a first connected domain and a second connected domain which is possibly intermittent from the connected domain in the surface image of the wafer to be detected, and combining the second connected domain to form a final defect region to be detected; and identifying the defect type based on the finally determined defect region to be detected, so that the accuracy of identifying the scratch defect is improved.
Drawings
FIG. 1 is a schematic view of an environment for detecting a scratch defect on a wafer surface according to the present disclosure;
FIG. 2 is a schematic flow chart of a method for detecting a scratch defect on a wafer surface according to the present disclosure;
Fig. 3 is a schematic view of a wafer image obtained by multiple acquisitions provided in the present disclosure;
fig. 4 is a schematic diagram of a connected domain of a wafer to be tested according to the present disclosure;
fig. 5 is a schematic diagram of a second connected domain of a wafer to be tested according to the present disclosure;
FIG. 6 is a schematic diagram of an embodiment of the present disclosure for detecting a scratch defect on a wafer surface;
FIG. 7 is a schematic diagram of a scratch defect identification process provided in the present disclosure;
fig. 8 is a schematic diagram of a device for detecting a scratch defect on a wafer surface according to the present disclosure.
Detailed Description
The terms "first," "second," and the like in this disclosure are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature.
The terms "upper," "lower," "left," "right," and the like in this disclosure indicate an orientation or positional relationship based on that shown in the drawings, merely for convenience of description and to simplify the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present application.
In order to more clearly illustrate the present disclosure or the prior art solutions, the following description will clearly and completely describe the technical solutions in the present disclosure with reference to the drawings in the present disclosure, and it is apparent that the described embodiments are only some embodiments of the present disclosure, not all embodiments. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the disclosure, are within the scope of the disclosure.
Referring to fig. 1, a schematic diagram of an implementation environment for detecting scratch defects on a wafer surface is shown. In fig. 1, a wafer W to be measured is laid flat on a supporting member 40, and a light source 20 emits a light beam toward the wafer W to be measured. The scanning camera 10 collects reflected light or scattered light of the light beam passing through the surface of the wafer W to be measured, generates an image of the wafer W to be measured, and transmits the image to the computing device 30. The computing device 30 may perform the techniques of this disclosure based on the received wafer image to identify the type of surface defect of the wafer under test.
It should be noted that the implementation environment shown in fig. 1 is only illustrative and not limiting. It can be appreciated that, those skilled in the art may acquire the surface image of the wafer W to be measured by other methods or systems, which are not described in detail in this disclosure.
Referring to fig. 2, which illustrates a method for detecting a wafer surface scratch defect provided by the present disclosure, the method may be performed by the computing device 30 illustrated in fig. 1, and the method may include:
s201: acquiring an interesting wafer area image of a wafer to be tested based on a plurality of original images of the wafer to be tested;
when the defect on the surface of the wafer is detected by adopting an optical method, the light source emits detection light, the surface of the wafer is irradiated at a specific angle outside the wafer, and the detection light scattered or reflected by the defect is detected at the specific angle through the scanning camera so as to acquire an original image of the surface of the wafer to be detected.
Alternatively, the scanning camera may be an area-array camera or a line-array camera.
Optionally, the original image of the wafer to be tested may be a plurality of scanning cameras for respectively acquiring different areas of the wafer to be tested at the same time, so as to obtain the original images of the different areas of the plurality of wafers to be tested; or a scanning camera scans the wafer to be tested for multiple times, and images of different areas of the wafer to be tested are collected to form a plurality of original images of the wafer to be tested. In the wafer image schematic diagram obtained by multiple acquisitions as shown in fig. 3, one surface of the wafer to be measured is divided into 6 areas, and one camera acquires an image of one area at a time.
Alternatively, the original image of the wafer to be measured may be one or more scanning cameras that simultaneously acquire the complete image of the wafer to be measured. The complete image of the wafer to be measured refers to all areas capable of presenting one surface of the wafer to be measured in the acquired image. The complete image of the wafer to be measured can be obtained by scanning the complete surface of the wafer to be measured at one time, or can be obtained by splicing images of different areas.
Alternatively, when the surface of the wafer to be measured is scanned by a single scanning camera, the scanning camera can be fixed, the wafer to be measured can be moved, and the scanning camera can be moved, and the wafer to be measured can be fixed.
Optionally, the original image of the wafer to be tested obtained by scanning with the scanning camera may be a front image of the wafer or may be a back image of the wafer. The scanning camera for scanning the front surface of the wafer to be tested and the scanning camera for scanning the back surface of the wafer to be tested can be the same group of cameras, and can finish scanning by arranging a plurality of groups of cameras. When the front and back images of the wafer to be measured are collected by the same group of cameras, the front and back images can be obtained by adjusting the positions of the cameras and the light sources and fixing the positions of the wafer to be measured, or by fixing the positions of the scanning cameras and the light sources and adjusting the direction of the wafer to be measured, or by adjusting the scanning cameras, the light sources and the wafer to be measured at the same time.
The wafer area image of the wafer to be measured as a shooting target and the background area image formed by the surrounding environment are included in the acquired wafer to be measured original image. Generally, for a batch of wafers of the same specification, the acquisition conditions of the wafer image are fixed. The acquisition conditions refer to the relative positions, relative angles, relative movement directions, relative movement speeds, parameters of the scanning camera, parameters of the light source and the wafer to be measured, and the like. Under the same acquisition condition, in the original image of the wafer with the same specification, the positions of the wafer area and the background area in the original image are relatively fixed, and the positions of the center points of the wafer in the original image are also relatively fixed.
Optionally, for the wafer image to be tested whose original image is complete, acquiring the wafer region image of interest of the wafer to be tested based on a plurality of original images of the wafer to be tested includes: and cutting out and obtaining an interested wafer area image based on a plurality of original images of the wafer to be tested by taking the center point of the wafer to be tested as the circle center.
Optionally, for the wafer image to be tested whose original image is complete, acquiring the wafer region image of interest of the wafer to be tested based on a plurality of original images of the wafer to be tested includes:
Preprocessing each original image to obtain a preprocessed wafer image to be detected;
and cutting the preprocessed wafer image to be detected by taking the center point of the wafer to be detected as the center of a circle to obtain an interested wafer area image.
It should be noted that, for the wafer image to be tested whose original image is complete, the wafer area image may be cut before the image preprocessing, or the wafer area image may be cut after the preprocessing of the original image.
Optionally, for multiple times of scanning by a single scanning camera or multiple times of scanning by multiple cameras, respectively acquiring original images of different areas of a wafer to be tested, acquiring an image of a wafer area of interest of the wafer to be tested based on multiple original images of the wafer to be tested includes:
the complete wafer image to be detected is obtained through splicing;
and cutting out a wafer area part in the complete wafer image to be detected by taking the center point of the wafer to be detected as the circle center, so as to obtain an interesting wafer area image.
Optionally, in some examples, the acquiring the image of the wafer region of interest of the wafer to be measured based on the plurality of original images of the wafer to be measured includes, for each of the plurality of scans performed by the single scanning camera or the plurality of cameras, respectively, including:
Preprocessing each original image to obtain a preprocessed wafer image to be detected;
and splicing the preprocessed wafer images to be detected, and cutting the wafer area in the spliced images to obtain the wafer area image of interest.
Optionally, in other examples, for multiple scans of a single scanning camera or multiple cameras respectively acquiring original images of different areas of a wafer to be measured, acquiring an image of a wafer area of interest of the wafer to be measured based on multiple original images of the wafer to be measured includes:
preprocessing each original image to obtain a preprocessed wafer image to be detected;
splicing the preprocessed wafer images to be detected to obtain spliced images;
and cutting out a wafer area part in the spliced image by taking the center point of the wafer to be detected as the circle center to obtain an interested wafer area image.
It can be understood that by cutting out the wafer area image, the background area image formed by the surrounding environment is removed, the data volume of subsequent data processing is reduced, the interference of the background area image on the identification of the wafer surface defects is reduced, and the accuracy of the wafer surface defect detection is improved.
It should be noted that, in the wafer image to be measured with the same specification obtained by adopting the same acquisition condition, the position of the center point of the wafer to be measured is relatively fixed. Taking the center point of the wafer to be measured as the circle center, and intercepting the wafer area image as the wafer area image of interest.
Generally, preprocessing of an original image is mainly used for filtering, sharpening and the like of the original image, noise and interference in the original image are removed, and subsequent processing is facilitated. By preprocessing the original image, the method reduces abnormal imaging of a normal area of the wafer caused by exposure and other reasons, filters noise points and strengthens the characteristics of defects in the image of the wafer to be tested. It should be further noted that, for the preprocessing process of multiple original images, parallel preprocessing may be adopted to improve the processing efficiency.
Optionally, preprocessing each original image to obtain a preprocessed image of the wafer to be tested, including:
acquiring a plurality of standard images of the non-defective standard wafer based on the same acquisition conditions as the plurality of original images of the wafer to be tested;
for each original image, obtaining a differential image of each original image according to the corresponding standard image;
and carrying out gradient calculation on the differential image, wherein the obtained gradient image is a wafer image to be detected after preprocessing of each original image.
It should be noted that, in the acquired original image of the wafer to be tested, due to environmental reasons such as exposure, the gray values of the partial areas on the surface of the wafer are different from those of other normal areas. The gray scale values of the defective areas on the wafer surface are also different from those of other normal areas. The identification of defective areas on the wafer surface is disturbed by the abnormal areas of the image due to environmental reasons. The method and the device have the advantages that the images of the defect-free standard wafers obtained under the same acquisition conditions are used as standard images, the differential images of the wafers to be detected are obtained, and the influence of abnormal areas caused by environmental reasons is eliminated or weakened. Since the standard image acquisition process is also affected by environmental influences, such as exposure problems, abnormal areas generated due to environmental reasons also exist in the standard image. The corresponding differential image is obtained through the difference value between the original image and the standard image of the wafer to be detected, so that the influence of an abnormal area caused by environmental reasons can be eliminated or weakened.
Optionally, for each original image, obtaining a differential image of each original image according to the corresponding standard image, including:
and carrying out pixel-by-pixel difference on the original image of each wafer to be tested and the corresponding standard image to obtain a difference image of the original image of each wafer to be tested:
diffImg＝img-backImg
wherein img is an original image of the wafer to be detected, backImg is a corresponding standard image, and diffImg represents a differential image.
Alternatively, the standard image may be an image obtained by performing an average operation on an image acquired by the standard wafer multiple times.
In order to reduce uncertainty of single-time acquisition of standard wafer images, gray average values are obtained pixel by pixel after multiple acquisitions of the same area of the standard wafer, and the formed standard wafer average value image is used as a standard image.
Optionally, performing gradient calculation on the differential image, including calculating a gradient value of each pixel point in the differential image by a Sobel operator with a kernel size of 3 to obtain a gradient image;
wherein the horizontal convolution template in the Sobel operator isThe convolution template in the vertical direction is
It should be noted that, because of environmental factors, there is a certain difference in gray scale between wafer images in different areas, it is difficult to divide all the images by using a uniform gray scale threshold. The gradient represents the gray scale variation of an image pixel in a certain direction, and the larger the defect and background difference is, the more obvious the gradient is. The gradient image is based on the segmentation of the defect area, so that the influence of environmental factors can be reduced, and the defect characteristics can be enhanced.
In the wafer image schematic diagram obtained by multiple collection as shown in fig. 3, the linear array camera scans different areas of the wafer to be tested for 6 times, and then a complete wafer image to be tested is obtained after splicing. In the schematic diagram shown in fig. 3, the overlapping area 1 in the thickened black dashed frame is the part where both the acquisition 1 and the acquisition 2 are acquired, and the overlapping area 2 in the thickened black solid frame is covered by the acquisition 1, the acquisition 2, the acquisition 4 and the acquisition 5. Optionally, in some examples, stitching the preprocessed wafer image to be tested includes:
and acquiring the pixel gray values of the spliced images in a linear weighting mode for the overlapped areas of the plurality of preprocessed wafer images to be detected.
For example, in the graph shown in fig. 3, the pixel gray value calculation formula of the overlap region 1 is as follows:
addImg＝w1*gradImg1+(1-w1)*gradImg2
wherein gradImg1 represents the image gray value of the overlapping region 1 in the acquisition 1, gradImg2 represents the image gray value of the overlapping region 1 in the acquisition 2, w1 is the image weight corresponding to gradImg1, and addImg is the image gray value of the overlapping region 1 after weighting.
In general, the closer the pixel point is to gradImg1 in the overlap region, the larger w1 is.
It will be appreciated that when the overlapping area is an overlapping area covered by a plurality of wafer images to be tested in different areas, for example, 3 or 4 images in different areas, such as the overlapping area 2 shown in fig. 3, the pixel gray values of the overlapping area after stitching are obtained by linearly weighted summation of the pixel gray values of the images in different areas in the overlapping area. The weight values of the images in different areas in the overlapping areas can be set according to the distance between the pixel points and the corresponding image center.
The method has the advantages that the images are acquired and obtained respectively for different areas of the wafer to be detected, and the defect recognition is performed after the complete wafer area image is obtained through splicing in the area images with the same defect possibly distributed in different areas, so that the accuracy of the defect recognition can be improved.
S202: obtaining a plurality of connected domains according to the surface defects represented by the wafer region image of interest;
optionally, obtaining a plurality of connected domains according to the surface defect represented by the wafer region of interest image includes:
setting a segmentation threshold value, and carrying out thresholding treatment on the wafer region image of interest to obtain a segmentation image:
wherein Thr represents a segmentation threshold, i represents row coordinates of an image, j represents column coordinates of an image, binImg represents a segmented image, roiImg represents a wafer region of interest image;
and carrying out connected domain analysis on the segmented image to obtain a plurality of connected domains with surface defects.
Wherein the connected domain analysis may be a 4-neighborhood connected domain analysis.
It can be appreciated that, during the above-described process of acquiring the segmented image, when the pixel value of the wafer region image of interest is greater than the segmentation threshold value, the pixel value is kept unchanged; when the pixel value of the wafer region of interest image is less than the segmentation threshold, it is set to 0. Discrete pixel points associated with the surface defects are screened by acquiring the segmented image. And (3) carrying out connected domain analysis on the screened pixels to obtain a plurality of connected domains with surface defects so as to carry out defect identification based on morphological characteristics of the connected domains.
S203: dividing the plurality of connected domains into a first connected domain or a second connected domain;
and identifying a first connected domain representing a clear-boundary and relatively complete defect for the connected domain in the image of the wafer region of interest, and identifying a second connected domain representing a defect with intermittent possibility and fuzzy boundary. For a well-defined, relatively complete defect, it is generally possible to concentrate all or most in one connected domain, a first connected domain being able to characterize a defect independently. Defects that are intermittent or blurred in boundary, after imaging and image processing, may be distributed in two or more second communicating domains that are adjacent. For the second connected domain, the morphological feature of one connected domain cannot accurately represent the corresponding defect, and a defect needs to be commonly represented by combining a plurality of connected domains with high correlation in the second connected domain. And combining the plurality of second connected domains with high correlation to form a defect region to be detected, and identifying the defect category based on the defect region to be detected, so that the identification accuracy of the defects represented by the second connected domains is improved.
By identifying the first connected domain in the connected domain, the correlation among all the connected domains is prevented from being analyzed, the identification accuracy of defects represented by the second connected domain is improved, the data processing amount is reduced, and the defect detection efficiency is improved.
In the connected domain schematic diagram of the wafer to be tested shown in fig. 4, there are four connected domains, namely connected domain 1, connected domain 2, connected domain 3 and connected domain 4. The gray values of the connected domain 1 and the connected domain 2 are obviously different from those of the normal region of the wafer, and other connected domains with short distances are not arranged at the periphery. The connected domain 1 and the connected domain 2 are determined to be the first connected domain. The boundaries of the first connected domains are clear, and the defect types can be identified according to the morphological characteristics of one first connected domain. The difference between the gradation values of the connected regions 3 and 4 and the normal region of the wafer is slightly smaller, and it can be considered that an insignificant defect or intermittent defect is formed. The connected domain 3 and the connected domain 4 may be two parts of imaging of a defect, and defect identification is more accurate in combination with the connected domain 3 and the connected domain 4. The communicating domain 3 and the communicating domain 4 are determined as the second communicating domain.
Dividing the plurality of connected domains into a first connected domain or a second connected domain, comprising:
for each connected domain, determining that each connected domain is a first connected domain or a second connected domain according to the average gray value of the connected domain.
Specifically, for each connected domain, according to the average gray value of the connected domain, determining that each connected domain is the first connected domain or the second connected domain includes:
Calculating an average gray value of each connected domain for each connected domain;
when the average gray value is larger than a gray threshold value, each connected domain is a first connected domain;
and when the average gray value is smaller than or equal to a gray threshold value, each connected domain is a second connected domain.
Generally, a large average gray value of the first connected domain indicates that the defect and the surrounding background are different, the defect integrity is higher, and one first connected domain can independently represent one defect. The second connected domain has a small average gray value, which indicates that the corresponding defect and the surrounding background have small differences. Defects represented by the second connected domain have a high possibility of interruption in the image, and may be distributed in a plurality of adjacent connected domains, and one defect needs to be characterized by combining the plurality of second connected domains.
Optionally, dividing the plurality of connected domains into the first connected domain or the second connected domain includes:
and for each connected domain, judging that each connected domain is a first connected domain or a second connected domain according to the distribution density of the connected domains in a specific range around each connected domain.
The distribution density of the connected domains may be set by the distance between each connected domain and the surrounding connected domains and/or the number of connected domains within a specific range around each connected domain.
S204: identifying the type of the defect in each first connected domain according to the characteristic value of the connected domain;
because the defects represented by the first connected domain are relatively complete, aiming at the first connected domain with large average gray value of the connected domain, the defect type is identified by calculating the characteristic value of the first connected domain.
For the types of defects common in wafers, such as edge chipping, scratching, and cracking, they all have specific topographical features on the wafer surface that can be characterized by characteristic values in the image. These characteristic values may include the area, aspect ratio, roundness, average gray value, length, width, direction angle, minimum bounding rectangle aspect ratio, minimum bounding rectangle filling rate, minimum bounding circle filling rate, etc. of the defect region. And on the basis of the connected domain obtained by the preprocessed image, the pixel gray value in the connected domain is the pixel gradient value in the gradient image obtained by the preprocessing. The average gray value of the connected domain indicates the brightness and darkness degree of the connected domain compared with the surrounding area, and the larger the gray value is, the more obvious the defect is; the smaller the gray value, the darker the defect. The aspect ratio and the filling rate of the smallest circumscribed rectangle of the connected domain are used for measuring the shape of the region, and the larger the aspect ratio is, the more the connected domain tends to be a bar straight line; the lower the filling rate, the closer the connected domain is to the arc-shaped curve.
Specifically, for the scratch defect, judging whether the defect in the connected domain is the scratch defect according to the length-width ratio and the filling rate of the smallest circumscribed rectangle of the connected domain.
S205: for each second communicating domain, determining a corresponding third communicating domain according to the distance and the direction difference, and merging each second communicating domain with the corresponding third communicating domain to generate a corresponding defect region to be detected;
s206: and identifying the type of the defect in each defect area to be detected according to the characteristic value of each defect area to be detected.
It should be noted that, for the second connected domain, the morphological feature of one connected domain cannot accurately represent the corresponding defect, and it is necessary to jointly represent the corresponding defect by combining a plurality of connected domains with high correlation in the second connected domain. And screening the connected domains which can be combined with the connected domains from other second connected domains according to set conditions as corresponding third connected domains for one connected domain in the second connected domains. The third communicating region corresponding to the second communicating region may include a plurality of communicating regions. And combining the second connected domain and the corresponding third connected domain to form a defect region to be detected, and carrying out defect identification based on the defect region to be detected. And for the second connected domain which cannot be combined with other second connected domains, only one connected domain in the defect region to be detected corresponding to the second connected domain.
For example, in the second connected domain schematic diagram of the wafer to be tested shown in fig. 5, the connected domains 501, 502, 503 are determined as the second connected domains. In some cases, when the second connected domain 501 is identified as its corresponding third connected domain, the other second connected domains include connected domain 502 and connected domain 503. The other second communicating region is screened for a third communicating region that can be merged with the second communicating region 501. Assuming that the second connected domain 502 is determined to satisfy the condition of merging with the second connected domain 501, and the second connected domain 503 is determined not to satisfy the condition of merging with the second connected domain 501, a third connected domain corresponding to the second connected domain 501 includes the second connected domain 502, and the second connected domain 501 merges with the corresponding third connected domain 502 to form a defective region to be detected corresponding to the second connected domain 501. When the second connected domain 503 identifies the corresponding third connected domain, the other second connected domains include the connected domain 501 and the connected domain 502, and the second connected domain 503 is independently used as the defect area to be detected, assuming that no connected domain in the other second connected domains satisfies the merging condition.
Optionally, in some examples, for each second connected domain, determining a corresponding third connected domain according to the distance and the direction difference includes:
Calculating, for each second communicating domain, a distance between the each second communicating domain and each of the other second communicating domains;
the connected domains with the distance smaller than the distance threshold value are candidate third connected domains of each second connected domain;
calculating a direction difference between each of the second communicating domains and each of the candidate third communicating domains;
and determining the connected domain with the direction difference smaller than the direction difference threshold as a third connected domain corresponding to each second connected domain.
Optionally, calculating a direction difference between each of the second connected domains and each of the candidate third connected domains includes:
the straight line of the smallest circumscribed rectangle of each second communicating region in the long side direction is a first straight line;
the straight line of the smallest circumscribed rectangle in each candidate third communication domain in the long side direction is a second straight line;
the included angle between the first straight line and the second straight line is a direction difference.
For example, in the second connected domain schematic diagram of the wafer to be tested shown in fig. 5, the connected domains 501, 502, 503 are determined as the second connected domains. The direction of the second communicating region is determined by the long-side direction of its smallest circumscribed rectangle, specifically, by the angle between the long-side direction of the respective smallest circumscribed rectangle and the horizontal axis. The second communicating region 501 is a line segment, and the direction of the long side of the smallest circumscribed rectangle is consistent with the line where the second communicating region 501 is located. The included angles between the second communicating areas 501, 502, 503 and the horizontal axis are respectively theta 1 、v 2 、θ 3 . The direction difference between the second communicating region 501 and the second communicating region 502 passes through an angle |θ 1 -θ 2 And/represents. Similarly, the difference in direction between the second communicating region 501 and the second communicating region 503 is |θ 1 -θ 3 I, the firstThe difference in direction between the two communicating regions 502 and the second communicating region 503 is |θ 2 -θ 3 |。
Optionally, the calculating the distance between each of the second communicating domains and each of the other second communicating domains includes:
a straight line parallel to the long side direction of the minimum circumscribed rectangle of each second communicating region is a reference straight line passing through the center point of the minimum circumscribed rectangle of each second communicating region;
the vertical distance between the center point of the smallest circumscribed rectangle of each of the other second communication domains and the reference straight line is a first distance;
the distance between the center point of the smallest circumscribed rectangle of each of the other second communication domains and the center point of the smallest circumscribed rectangle of each of the other second communication domains is a second distance;
accordingly, in the other second connected domains, the connected domain with the distance smaller than the distance threshold is a candidate third connected domain of each second connected domain, including:
the first distance is smaller than a first distance threshold, and the connected domains with the second distance smaller than a second distance threshold are candidate third connected domains of each second connected domain.
Alternatively, the distance between the second communicating region 501 and the second communicating region 502 may be represented by the shortest distance therebetween.
Optionally, merging the second connected domain and the third connected domain to generate a corresponding defect area to be detected, including:
setting each second communicating domain and the corresponding third communicating domain as the same mark, wherein the area corresponding to the mark is a defect area to be detected.
In the second connected domain schematic diagram of the wafer to be tested shown in fig. 5, when the second connected domain 501 and the second connected domain 502 meet the merging condition, the same mark a of the second connected domain 501 and the second connected domain 502 is set, and the region corresponding to the mark a forms a defect region to be tested.
One defect area to be measured may include a plurality of connected domains, and a defect type is identified for each defect area to be measured. When a defect area to be detected comprises a plurality of connected domains, feature calculation is performed by combining the connected domains, and defect types are identified. For example, in fig. 5, the average gray level of the to-be-detected defect area a is the average gray level of the pixels within the two connected domains 501 and 502, the defect area length is the total length of the connected domains 501 and 502, and so on.
Optionally, identifying a defect class based on the defect area to be detected includes:
the following judgment is carried out for each defect area to be detected:
when the aspect ratio and the filling rate mean value of the minimum circumscribed rectangle of each defect area to be detected are in the aspect ratio range and the filling rate range of the minimum circumscribed rectangle corresponding to the scratch defect, determining the defect type of each defect area to be detected as the scratch defect; otherwise, other defects.
In some examples, fig. 6 illustrates a wafer surface scratch defect detection embodiment. And carrying out differential processing on the acquired wafer original image to be detected to obtain a differential image. And carrying out gradient calculation on the differential image to obtain a gradient image, and cutting the gradient image after splicing to obtain the wafer region image of interest. And carrying out connected domain analysis and eigenvalue calculation on the wafer region image of interest, then carrying out scratch defect identification, and carrying out defect grade classification according to the identification result. The connected domain analysis, the characteristic value calculation and the scratch defect identification process are loop iteration processes. Specifically, in the scratch defect identification flowchart shown in fig. 7, connected domain feature parameters are calculated for connected domains in the image of the wafer region of interest, and the connected domain feature parameters mainly include connected domain average gray values. And judging whether the connected domain is the first connected domain or the second connected domain according to the comparison result of the average gray value of each connected domain and the gray threshold value. And for the first connected domains, according to whether the aspect ratio and the filling rate of the minimum circumscribed rectangle of each first connected domain meet the scratch defect condition, wherein the scratch defect condition is a set aspect ratio range and filling rate range of the minimum circumscribed rectangle. And if the scratch defect condition is met, judging the first connected domain as the scratch defect. Otherwise, the first connected domain is judged to be other defects. And merging the connected domains in the second connected domain according to the direction difference and the distance for the second connected domain with the average gray value smaller than the gray threshold value. And recalculating characteristic parameters of the combined defect area to be detected, wherein the characteristic parameters comprise the aspect ratio and the filling rate of the minimum circumscribed rectangle of the defect area to be detected. Judging whether the defect area is a scratch defect or not according to the recalculated characteristic parameters of the defect area to be detected. And judging scratch defects of the connected domains which cannot be combined in the second connected domain as a defect region to be detected.
Further, according to the severity of the scratch defect, a corresponding judgment standard is set, and the defects are classified into severe, medium and slight 3 grades. Defects with larger average gray scale and longer length have higher defect severity level. Conversely, the lower the defect severity level.
Based on the same inventive concept as the foregoing technical solution, referring to fig. 8, there is shown a device 80 for detecting a scratch defect on a wafer surface provided by the present disclosure, where the device 80 includes: an image acquisition section 801, an extraction section 802, a determination section 803, a first recognition section 804, a merging section 805, a second recognition section 806; wherein,
the image acquisition section 801 is configured to: acquiring an interesting wafer area image of a wafer to be tested based on a plurality of original images of the wafer to be tested;
the extraction portion 802 is configured to: obtaining a plurality of connected domains according to the surface defects represented by the wafer region image of interest;
the determination section 803 is configured to: dividing the plurality of connected domains into a first connected domain or a second connected domain;
the first identification portion 804 is configured to: identifying the type of the defect in each first connected domain according to the characteristic value of the connected domain;
The merging section 805 is configured to: for each second communicating domain, determining a corresponding third communicating domain according to the distance and the direction difference, and merging each second communicating domain with the corresponding third communicating domain to generate a corresponding defect region to be detected;
the second identifying section 806 is configured to identify the type of defect in each defective area to be detected based on the characteristic value of each defective area to be detected.
For the specific implementation of the functions configured by the "parts" in the above-mentioned device, reference may be made to the implementation manner of the corresponding steps in the method for detecting the scratch defect on the wafer surface shown in fig. 2 and examples thereof, which are not repeated herein.
Based on the same conception as the above technical solution, the present disclosure further provides a wafer quality evaluation method, which further includes, after the foregoing method for detecting a scratch defect on a wafer surface: and evaluating the quality of the wafer to be tested based on the defect type and the defect level.
In some examples, referring to fig. 1, a system for detecting a wafer surface defect according to an exemplary embodiment of the present disclosure is shown, where the computing device 30 is configured to perform the foregoing method and steps for detecting a wafer surface scratch defect, which are not described herein.
In some examples, computing device 30 may be at least one of a smart phone, a smart watch, a desktop computer, a laptop computer, a virtual reality terminal, an augmented reality terminal, a wireless terminal, and a laptop portable computer. The computing device 30 has communication capabilities and may access a wired network or a wireless network. Computing device 30 may refer broadly to one of a plurality of terminals, and those skilled in the art will recognize that the number of terminals may be greater or lesser. In some examples, computing device 30 may receive the wafer image transmitted by the scanning camera based on the accessed wired network or wireless network. It will be appreciated that the computing device 30 performs the computing and processing operations after acquiring the wafer image in the technical solution of the present disclosure, which is not limited in this disclosure.
A computing device in this application may include one or more of the following components: a processor and a memory.
In the alternative, the processor uses various interfaces and lines to connect various portions of the overall computing device, execute various functions of the computing device, and process data by executing or executing instructions, programs, code sets, or instruction sets stored in memory, and invoking data stored in memory. Alternatively, the processor may be implemented in at least one hardware form of digital signal processing (Digital Signal Processing, DSP), field-Programmable gate array (FPGA), programmable logic array (Programmable Logic Array, PLA). The processor may integrate one or a combination of several of a central processing unit (Central Processing Unit, CPU), an image processor (Graphics Processing Unit, GPU), a Neural network processor (Neural-network Processing Unit, NPU), and baseband chips, etc. The CPU mainly processes an operating system, a user interface, an application program and the like; the GPU is used for rendering and drawing the content required to be displayed by the touch display screen; the NPU is used to implement artificial intelligence (Artificial Intelligence, AI) functionality; the baseband chip is used for processing wireless communication. It will be appreciated that the baseband chip may not be integrated into the processor and may be implemented by a single chip.
The Memory may include random access Memory (Random Access Memory, RAM) or Read-Only Memory (ROM). Optionally, the memory includes a non-transitory computer readable medium (non-transitory computer-readable storage medium). The memory may be used to store instructions, programs, code sets, or instruction sets. The memory may include a stored program area and a stored data area, wherein the stored program area may store instructions for implementing an operating system, instructions for at least one function (such as a touch function, a sound playing function, an image playing function, etc.), instructions for implementing the various method embodiments described below, etc.; the storage data area may store data created from the use of the computing device, and the like.
In addition, those skilled in the art will appreciate that the structures of the computing devices described above are not limiting of the computing devices, and that a computing device may include more or fewer components than shown, or may combine certain components, or a different arrangement of components. For example, the computing device further includes a display screen, a camera component, a microphone, a speaker, a radio frequency circuit, an input unit, a sensor (such as an acceleration sensor, an angular velocity sensor, a light sensor, etc.), an audio circuit, a WiFi module, a power supply, a bluetooth module, etc., which are not described herein.
The disclosure also provides a computer storage medium storing a method program for detecting a wafer surface scratch defect, where the method and steps for detecting a wafer surface scratch defect in the above technical solution are implemented when the method program is executed by at least one processor.
The present disclosure also provides a computer program product comprising computer instructions stored in a computer-readable storage medium; the processor of the computing device reads the computer instructions from the computer-readable storage medium, and the processor executes the computer instructions, so that the computing device executes to implement the method for detecting the scratch defect on the wafer surface according to the above embodiments.
Those of skill in the art will appreciate that in one or more of the examples described above, the functions described in this disclosure may be implemented in hardware, software, firmware, or any combination thereof. When implemented in software, these functions may be stored on or transmitted over as one or more instructions or code on a computer-readable medium. Computer-readable media includes both computer storage media and communication media including any medium that facilitates transfer of a computer program from one place to another. A storage media may be any available media that can be accessed by a general purpose or special purpose computer.
It should be noted that: the embodiments described in the present disclosure may be arbitrarily combined without any collision.
The foregoing is merely specific embodiments of the disclosure, but the protection scope of the disclosure is not limited thereto, and any person skilled in the art can easily think about changes or substitutions within the technical scope of the disclosure, and it is intended to cover the scope of the disclosure. Therefore, the protection scope of the present disclosure shall be subject to the protection scope of the claims.
Claims (11)
1. The method for detecting the scratch defect on the surface of the wafer is characterized by comprising the following steps of:
acquiring an interesting wafer area image of a wafer to be tested based on a plurality of original images of the wafer to be tested;
obtaining a plurality of connected domains according to the surface defects represented by the wafer region image of interest;
dividing the plurality of connected domains into a first connected domain or a second connected domain;
identifying the type of the defect in each first connected domain according to the characteristic value of the connected domain;
for each second communicating domain, determining a corresponding third communicating domain according to the distance and the direction difference, and merging each second communicating domain with the corresponding third communicating domain to generate a corresponding defect region to be detected;
And identifying the type of the defect in each defect area to be detected according to the characteristic value of each defect area to be detected.
2. The method of claim 1, wherein the dividing the plurality of connected domains into the first connected domain or the second connected domain comprises:
for each connected domain, determining that each connected domain is a first connected domain or a second connected domain according to the average gray value of the connected domain.
3. The method according to claim 1, wherein for each second connected domain, determining a corresponding third connected domain according to the distance and the direction difference comprises:
calculating, for each second communicating domain, a distance between the each second communicating domain and each of the other second communicating domains;
the connected domains with the distance smaller than the distance threshold value are candidate third connected domains of each second connected domain;
calculating a direction difference between each of the second communicating domains and each of the candidate third communicating domains;
and determining the connected domain with the direction difference smaller than the direction difference threshold as a third connected domain corresponding to each second connected domain.
4. A method according to claim 3, wherein said calculating a direction difference between said each second connected domain and each of said candidate third connected domains comprises:
the straight line of the smallest circumscribed rectangle of each second communicating region in the long side direction is a first straight line;
the straight line of the smallest circumscribed rectangle in each candidate third communication domain in the long side direction is a second straight line;
the included angle between the first straight line and the second straight line is a direction difference.
5. A method according to claim 3, wherein said calculating the distance between each of said second communicating domains and each of the other second communicating domains comprises:
a straight line parallel to the long side direction of the minimum circumscribed rectangle of each second communicating region is a reference straight line passing through the center point of the minimum circumscribed rectangle of each second communicating region;
the vertical distance between the center point of the smallest circumscribed rectangle of each of the other second communication domains and the reference straight line is a first distance;
the distance between the center point of the smallest circumscribed rectangle of each of the other second communication domains and the center point of the smallest circumscribed rectangle of each of the other second communication domains is a second distance;
Accordingly, in the other second connected domains, the connected domain with the distance smaller than the distance threshold is a candidate third connected domain of each second connected domain, including:
the first distance is smaller than a first distance threshold, and the connected domains with the second distance smaller than a second distance threshold are candidate third connected domains of each second connected domain.
6. The method of claim 1, wherein the acquiring the wafer area of interest image of the wafer under test based on the plurality of raw images of the wafer under test comprises:
preprocessing each original image to obtain a preprocessed wafer image to be detected;
and splicing the preprocessed wafer images to be detected, and cutting the wafer area in the spliced images to obtain the wafer area image of interest.
7. The method of claim 6, wherein preprocessing each original image to obtain a preprocessed image of the wafer to be tested, comprises:
acquiring a plurality of standard images of the non-defective standard wafer based on the same acquisition conditions as the plurality of original images of the wafer to be tested;
for each original image, obtaining a differential image of each original image according to the corresponding standard image;
And carrying out gradient calculation on the differential image, wherein the obtained gradient image is a wafer image to be detected after preprocessing of each original image.
8. The method of claim 7, wherein stitching the preprocessed wafer image to be tested comprises:
and acquiring the pixel gray values of the spliced images in a linear weighting mode for the overlapped areas of the plurality of preprocessed wafer images to be detected.
9. A device for detecting scratch defects on a wafer surface, the device comprising: an image acquisition section, an extraction section, a determination section, a first recognition section, a merging section, a second recognition section; wherein,
the image acquisition section configured to: acquiring an interesting wafer area image of a wafer to be tested based on a plurality of original images of the wafer to be tested;
the extraction portion is configured to: obtaining a plurality of connected domains according to the surface defects represented by the wafer region image of interest;
the determination section is configured to: dividing the plurality of connected domains into a first connected domain or a second connected domain;
the first identification portion is configured to: identifying the type of the defect in each first connected domain according to the characteristic value of the connected domain;
The merging section configured to: for each second communicating domain, determining a corresponding third communicating domain according to the distance and the direction difference, and merging each second communicating domain with the corresponding third communicating domain to generate a corresponding defect region to be detected;
the second identifying section is configured to identify a type of defect within each defective area to be detected based on a characteristic value of each defective area to be detected.
10. A system for detecting a scratch defect on a wafer surface, the system comprising:
a scanning camera configured to: collecting an original image of the wafer to be tested by scanning the wafer to be tested once or a plurality of times;
a light source configured to: the scanning camera irradiates the surface of the wafer to be detected when acquiring the original image;
a support member configured to: when the image of the wafer to be detected is acquired, supporting and driving the wafer to be detected to move;
a computing device configured to: the method and the steps for detecting the scratch defects on the surface of the wafer as shown in any one of claims 1 to 8 are realized when the method and the steps are executed.
11. A computer storage medium storing a program for detecting wafer surface defects, which when executed by at least one processor implements the method and steps of detecting wafer surface scratch defects according to any one of claims 1 to 8.
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